CN106025074A - Perovskite solar cell and preparation method thereof - Google Patents

Abstract

The invention provides a perovskite solar cell and a preparation method thereof. The contact resistance is reduced and the electric conductivity is improved through humid air treatment on a hole transport layer thin film, so that current of the cell is improved; and the optical-electrical characteristics of the solar cell are improved. Meanwhile, better diffusion of oxygen in a hole transport layer and a perovskite layer is promoted by the treatment process; the trap density is reduced; the interface resistance and the charge recombination rate between the hole transport layer and the perovskite layer are reduced; and the charge collection and transmission capacity is improved, so that the current and voltage of the cell are improved; and the optical-electrical characteristic of the solar cell are improved. The fill factor of the perovskite solar cell prepared by the preparation method provided by the invention can reach over 0.7; the short-circuit current density can reach 15.24mA/cm<2>; the open-circuit voltage can reach 0.95V; the maximum photoelectric conversion efficiency can reach 10.42%; and the perovskite solar cell has good photoelectric property.

Description

A kind of perovskite solar cell and preparation method thereof

technical field

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell and a preparation method thereof.

Background technique

Solar cells, also known as photovoltaic cells, are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical effect. At present, silicon-based solar cells are mainly used in the market, but their complex manufacturing process, high energy consumption and high cost seriously restrict their large-scale application.

Since 2009, _{perovskite solar} cells have attracted much attention due to their high quantum efficiency, short _- circuit current density, and open _- circuit voltage ^{. 2+} , etc.; B=Pb ²⁺ , Sn ²⁺ , etc.; X=Cl ^- , Br ^- , SCN ^- , I ^- , etc.) Photovoltaic materials with perovskite structure realize photoelectric conversion, with high efficiency, light weight, and manufacturing process It is simple and can be prepared into large-area flexible devices and other outstanding advantages. Its flip-chip basic structure is a glass substrate, a transparent electrode layer, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal electrode from bottom to top, similar to p-(pi)-i-(in )-n multilayer structure, so far, except for silicon solar cells, the solar cell with the highest single-junction efficiency.

However, the perovskite material light-absorbing layer of perovskite solar cells is very sensitive to water, and it will chemically react with water in the air with high humidity to destroy the crystal structure, resulting in a decrease in battery performance. Therefore, the preparation and use of perovskite solar cells are controlled under the condition of air relative humidity below 30%, which limits its application to a large extent.

Contents of the invention

The object of the present invention is to provide a perovskite solar cell and a preparation method thereof. The perovskite solar cell prepared by the invention can be used in the air with high relative humidity and has good photoelectric performance.

The invention provides a method for preparing a perovskite solar cell. The perovskite solar cell comprises a conductive glass, an electron transport layer, a perovskite layer, a hole transport layer, a photocathode modification layer and a photocathode layer arranged in sequence, The hole transport layer was subjected to a humid air treatment.

Preferably, the humid air treatment is specifically: before the photocathode modification layer is coated, the hole transport layer in the four-layer composite film structure of the conductive glass, the electron transport layer, the perovskite layer and the hole transport layer is treated with moist air. surface for spraying.

Preferably, the relative humidity of the humid air is 30-50%.

Preferably, the relative humidity of the humid air is 35-49%.

Preferably, the temperature of the humid air is 20-65°C.

Preferably, the temperature of the humid air is 40-55°C.

Preferably, the blowing flow rate of the humid air is 2-4 L/min.

Preferably, the time for the humid air treatment is 8-12 hours.

Preferably, the blowing direction is perpendicular to the surface of the hole transport layer.

The present invention also provides the perovskite solar cell prepared by the preparation method described in the above technical solution.

The present invention uses high relative humidity to dissolve part of the organic matter in the film through the moist air treatment of the hole transport layer film, accelerates the transport of substances between layers, contributes to the reconstruction process of the film, and then helps to reduce the contact of the device resistance, improve the life of carriers transported between thin film layers, the leakage current through the battery becomes smaller, and the electrical conductivity is improved, thereby increasing the battery current and improving the photoelectric characteristics of the solar cell; at the same time, the airflow treatment process promotes the flow of oxygen in the hole transport layer And better diffusion in the perovskite layer, so that the film material can better contact with the air, improve the oxidation degree and crystallinity of the hole transport layer, reduce the trap density, and reduce the gap between the hole transport layer and the perovskite layer. The interfacial resistance and charge recombination rate between them are conducive to improving the charge collection and transmission capabilities, thereby increasing the battery current and voltage, and improving the photoelectric characteristics of solar cells. Experimental results show that the perovskite solar cell prepared by the preparation method provided by the present invention has a fill factor of more than 0.7, a short-circuit current density of 15.24mA/cm ² , an open-circuit voltage of 0.95V, and a photoelectric conversion efficiency of up to 10.42%. , with good photoelectric properties.

The preparation method provided by the invention has the advantages of simple operation, mild conditions, low energy consumption, low cost, easy process control, and is suitable for large-scale industrial promotion.

Description of drawings

Fig. 1 is the structural representation of conductive glass in comparative example and embodiment of the present invention;

Figure 2 is a schematic diagram of the performance test structure of the comparative example and the embodiment perovskite solar cell, wherein: 1-FTO conductive glass; 2-TiO ₂ electron transport layer; 3-perovskite CH ₃ NH ₃ PbI _x Cl _3-x Light absorbing layer; 4-Spiro-OMeTAD hole transport layer; 5-MoO ₃ anode modification layer; 6-Ag metal electrode; 7-metal wire; 8-load or test device; 9-incident light;

Fig. 3 is the volt-ampere characteristic curve of the perovskite solar cell prepared by comparative example and embodiment of the present invention;

Fig. 4 is the PL spectrum diagram of the perovskite solar cells prepared in the comparative examples and examples of the present invention.

detailed description

The invention provides a method for preparing a perovskite solar cell. The perovskite solar cell comprises a conductive glass, an electron transport layer, a perovskite layer, a hole transport layer, a photocathode modification layer and a photocathode layer arranged in sequence, The hole transport layer was subjected to a humid air treatment.

In the present invention, the humid air treatment is preferably before the photocathode modification layer is coated, using humid air to transport the holes in the four-layer composite film structure of the conductive glass, the electron transport layer, the perovskite layer and the hole transport layer. The surface of the layer is sprayed.

In the present invention, the preparation of the perovskite solar cell preferably includes the following steps:

(1) On the surface of conductive glass, an electron transport layer, a perovskite layer and a hole transport layer are sequentially coated to obtain a four-layer composite film structure;

(2) The surface of the hole transport layer described in step (1) is subjected to humid air treatment;

(3) A photocathode modification layer and a photocathode base layer are sequentially coated on the surface of the hole transport layer treated in step (2) to obtain a perovskite solar cell.

The present invention has no special limitation on the type of the conductive glass, and the conductive glass well known to those skilled in the art can be used. In the present invention, the conductive glass is preferably FTO conductive glass or ITO conductive glass, more preferably FTO conductive glass. In the present invention, the sheet resistance of the FTO conductive glass is preferably 6-8Ω/sq, more preferably 6.5-7.5Ω/sq; the light transmittance of the FTO conductive glass is preferably greater than 85%, more preferably 88% ~95%; the etching area of the FTO conductive glass is preferably 1/4~1/2 of the total area, more preferably 1/3; the area of the FTO conductive glass is preferably 14~16mm×14~16mm. In the present invention, the FTO conductive glass is used as the photoanode layer, which has good chemical stability and good photoelectric performance.

In the present invention, it is preferable to pretreat the surface of the conductive glass first. In the present invention, the pretreatment preferably includes ultraviolet light treatment. In the present invention, the wavelength of the ultraviolet light is preferably 350-450 nm; the intensity of the ultraviolet light is preferably 24-28 mW/cm ² . In the present invention, the time of the ultraviolet light treatment is preferably 15-25 minutes, more preferably 18-22 minutes. In the present invention, the ultraviolet light treatment can remove residual organic impurities on the surface of the conductive glass and improve the surface morphology of the conductive glass.

After the pretreatment is completed, the present invention preferably sequentially coats an electron transport layer, a perovskite layer and a hole transport layer on the surface of the conductive glass obtained by the pretreatment to obtain a four-layer composite film structure. The present invention has no special limitation on the preparation of the four-layer composite film structure, and the preparation method of the four-layer composite film structure in the perovskite solar cell well-known to those skilled in the art can be used.

In the present invention, there is no special limitation on the material of the electron transport layer, and materials known to those skilled in the art can be used for the electron transport layer. In the present invention, the electron transport layer is preferably TiO ₂ or ZnO, more preferably TiO ₂ . In the present invention, the thickness of the electron transport layer is preferably 30-60 nm, more preferably 40-50 nm. In the present invention, the electron transport layer forms an ohmic contact with the perovskite layer, which can effectively transport electrons while effectively blocking hole transport.

In the present invention, the electron transport layer is preferably coated on the conductive glass to obtain a double-layer composite film structure. In the present invention, the coating method is preferably sputtering, deposition or spin coating; in the present invention, it is more preferred to apply the TiO ₂ precursor solution to the surface of the conductive glass by spin coating. In the present invention, the rotational speed of the spin coating is preferably 6000-7000 rpm, more preferably 6400-6600 rpm. In the present invention, the spin coating is preferably performed in an inert atmosphere.

In the present invention, the molar concentration of the TiO ₂ precursor solution is preferably 0.18-0.3 mol/L, more preferably 0.2-0.25 mol/L. In the present invention, the TiO ₂ precursor solution is preferably obtained by mixing a titanium source solution and a hydrochloric acid solution. In the present invention, the molar ratio of the titanium source to hydrochloric acid is preferably 0.18-0.3:1, more preferably 0.2-0.25:1. In the present invention, the titanium source is preferably an organic titanium source, more preferably titanium isopropoxide. In the present invention, the solvent of the titanium source solution is preferably an alcohol solvent, more preferably one or more of methanol, ethanol and propanol. In the present invention, the molar concentration of the titanium source solution is preferably 0.4-0.5 mol/L, more preferably 0.43-0.48 mol/L. In the present invention, the molar concentration of the hydrochloric acid is preferably 1.5-2.5 mol/L, more preferably 1.8-2.2 mol/L.

In order to make the _TiO2 precursor solution evenly cover the surface of the conductive glass, the present invention preferably preheats after the spin coating is completed. In the present invention, the preheating temperature is preferably 140-160° C., more preferably 145-155° C.; the holding time is preferably 5-15 minutes, more preferably 8-12 minutes.

After the preheating is completed, the present invention preferably heats the double-layer composite membrane structure obtained after the preheating to the annealing temperature for heat preservation. In the present invention, the heating rate is preferably 8-12°C/min; the annealing temperature is preferably 400-500°C, more preferably 440-460°C; the holding time is preferably 1.5-2.5h, More preferably, it is 1.8 to 2.2 hours. In the present invention, the annealing can increase the crystallization degree of titanium dioxide.

After the annealing is completed, in the present invention, the double-layer composite film structure obtained after the annealing is preferably subjected to oxygen plasma treatment. In the present invention, the oxygen plasma treatment time is preferably 4-6 minutes. In the present invention, the oxygen plasma treatment can remove surface residues after sintering of the titanium dioxide layer and improve the morphology of the substrate.

After the oxygen plasma treatment is completed, the present invention preferably coats a perovskite layer on the surface of the electron transport layer to obtain a three-layer composite film structure. In the present invention, the perovskite layer is preferably CH ₃ NH ₃ PbI _x Cl _3-x , 0<x<3, and x is more preferably 1-2. In the present invention, the thickness of the perovskite layer is preferably 350-450 nm, more preferably 380-420 nm, most preferably 390-410 nm. In the present invention, the perovskite layer is used as a photoactive layer, which can absorb photons in the ultraviolet-visible spectrum region to the greatest extent, thereby stimulating charge separation and carrier transport.

In the present invention, the method of coating the perovskite layer is preferably dual-source co-evaporation, gas phase assisted solution or solution spin coating; in the present invention, it is more preferred to spin coat the perovskite precursor solution on the surface of the electron transport layer. In the present invention, the speed of the spin coating is preferably 2000-3000 rpm, more preferably 2400-2600 rpm. In the present invention, the spin coating is preferably performed in an inert atmosphere.

In the present invention, the mass concentration of the perovskite precursor solution is preferably 40-50 wt%, more preferably 44-46 wt%. In the present invention, it is preferred to mix PbCl ₂ , CH ₃ NH ₃ I with a solvent, heat and react to obtain a perovskite precursor solution. In the present invention, the molar ratio of PbCl ₂ and CH ₃ NH ₃ I is preferably 0.3˜0.5:1. In the present invention, the solvent is preferably one or more of dimethylsulfoxide, acetonitrile and dimethylformamide, more preferably one or more of dimethylsulfoxide, acetonitrile and dimethylformamide kind.

In the present invention, the mixing is preferably performed under stirring conditions. In the present invention, the stirring is preferably magnetic stirring; the stirring speed is preferably 700-900 rpm, more preferably 750-850 rpm; the stirring time is preferably 10-14 hours, more preferably 11-13 hours. In the present invention, the reaction temperature is preferably 45-55°C, more preferably 48-52°C.

In order to improve the crystallization degree of the perovskite layer, in the present invention, annealing is preferably performed after the spin coating is completed to obtain a three-layer composite film structure. In the present invention, the annealing temperature is preferably 100-120° C., more preferably 105-115° C.; the annealing time is preferably 40-60 minutes, more preferably 45-55 minutes.

After the three-layer composite film structure is obtained, the present invention preferably coats a hole transport layer on the surface of the perovskite layer of the three-layer composite film structure to obtain a four-layer composite film structure. In the present invention, there is no special limitation on the material of the hole transport layer, and materials well known to those skilled in the art can be used for the hole transport layer. In the present invention, the hole transport layer is preferably 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (i.e. Spiro-OMeTAD), polymers of 3-hexylthiophene (i.e. P3HT), 4,4-azobis(4-cyanovaleric acid) (i.e. PTAA), CuSCN or CuI, in the present invention may be specifically Spiro-OMeTAD. In the present invention, the thickness of the hole transport layer is preferably 100-300 nm, more preferably 180-220 nm. In the present invention, the hole transport layer can form an ohmic contact with the perovskite layer, effectively transport holes and effectively block the transport of electrons.

In the present invention, the method of coating the hole transport layer is preferably deposition or spin coating; in the present invention, it is more preferred to spin coat the hole transport layer precursor solution on the surface of the perovskite layer. In the present invention, the speed of the spin coating is preferably 3500-4500 rpm, more preferably 3800-4200 rpm. In the present invention, the spin coating is preferably performed in an inert atmosphere.

In the present invention, the molar concentration of the hole transport layer precursor solution is preferably 0.15-0.2 mol/L. In the present invention, the acetonitrile solution of Spiro-OMeTAD, 4-tert-butylpyridine (ie TBP), lithium salt (ie Li-TFSI) and solvent are preferably mixed to obtain the hole transport layer precursor solution. In the present invention, the solvent is preferably chlorobenzene or chloroform.

After the four-layer composite membrane structure is obtained, the present invention performs humid air treatment on the hole transport layer of the four-layer composite membrane structure. In the present invention, the humid air treatment preferably specifically includes: spraying humid air on the surface of the hole transport layer in the four-layer composite film structure before coating the photocathode modification layer. In the present invention, the blowing direction is preferably perpendicular to the hole transport layer.

In the present invention, the relative humidity of the moist air is preferably 30-50%, more preferably 35-49%; the temperature of the moist air is preferably 20-65°C, more preferably 40-55°C; The flow rate of humid air is preferably 2-4 L/min. In the present invention, the humid air treatment time is preferably 8-12 hours.

After the humid air treatment is completed, the present invention preferably coats a photocathode modification layer on the surface of the hole transport layer after the humid air treatment to obtain a five-layer composite film structure. In the present invention, there is no special limitation on the material of the photocathode modification layer, and materials for the photocathode modification layer well known to those skilled in the art can be used. In the present invention, the photocathode modification layer is preferably MoO ₃ . In the present invention, the thickness of the photocathode modification layer is preferably 5-10 nm. In the present invention, the photocathode modification layer promotes better hole transport.

In the present invention, the coating method is preferably vacuum evaporation. In the present invention, the vacuum degree of the vacuum evaporation is preferably higher than 3.5×10-4 Pa, more preferably 3.6～ ⁴ × ^10-4 Pa; the evaporation rate of the vacuum evaporation is preferably

After the coating of the photocathode modification layer is completed, the present invention preferably coats a photocathode layer on the surface of the photocathode modification layer to obtain a perovskite solar cell. In the present invention, the photocathode layer is preferably Au or Ag, more preferably Ag. In the present invention, the thickness of the photocathode layer is preferably 80-120 nm, more preferably 90-110 nm. In the present invention, the coating method is preferably vacuum evaporation. In the present invention, the vacuum degree of the vacuum evaporation is preferably higher than 3.5×10-4 Pa, more preferably 3.6～ ⁴ × ^10-4 Pa; the evaporation rate of the vacuum evaporation is preferably

In order to further illustrate the present invention, the preparation method of the perovskite solar cell provided by the present invention will be described in detail below in conjunction with examples, but they should not be construed as limiting the protection scope of the present invention.

Comparative example:

1. Add an equal volume of 2mol/L HCl solution dropwise to the 0.46mol/L titanium isopropoxide solution to obtain a _TiO2 precursor solution with a molar concentration of 0.23mol/L;

2. Mix according to the ratio of PbCl ₂ :CH ₃ NH ₃ I:DMF=1.2mmol:3mmol:1mL, and magnetically stir at 50°C for 12h to prepare a perovskite precursor solution with a mass concentration of 45wt%;

3. According to the proportion of 72.3g Spiro-OMeTAD, 28.8uL 4-tert-butylpyridine (TBP), 17.5uL lithium salt (Li-TFSI), dissolved in 1mL chlorobenzene solvent, the molar concentration is 0.17mol/L Hole transport layer precursor solution;

4. Use FTO conductive glass with a surface sheet resistance of 7Ω/sq, a light transmittance greater than 85%, and an etching area of 1/3 of the total area as the substrate and transparent electrode 1, as shown in Figure 1;

5. After treating the surface of the substrate with UV light with an intensity of 26mW/ ^cm2 for 20min, spin-coat the _TiO2 precursor solution at a speed of 6500rpm, heat it in the air at 150°C for 10min, and then heat it up to 450°C for 2h. Afterwards, the surface was treated with oxygen plasma for 5min to obtain a _TiO2 dense layer with a film thickness of 30nm as the electron transport layer 2;

6. Spin-coat a perovskite precursor solution with a concentration of 45wt% on the electron transport layer 2 with a spin-coating method at a speed of 2500rpm for a spin time of 45s, and then anneal at 105°C for 50min to obtain a perovskite with a layer thickness of 400nm The mineral thin film is used as a light-absorbing layer, and this process needs to be carried out in an inert gas atmosphere;

7. Use the spin coating method to spin coat the hole transport layer precursor solution with a concentration of 0.17mol/L on the light-absorbing layer 3, the rotation speed is 4000rpm, and the rotation time is 45s to obtain a hole transport layer with a film thickness of 100nm. in an inert gas atmosphere;

8. Move the device to a room temperature and pressure with a relative humidity lower than 30% and let it stand for 10 hours (NRT group);

9. Using the vacuum thermal evaporation method, under the vacuum degree of 3.7×10 ^-4 Pa, the and The evaporation rate of 8nm MoO ₃ and 100nm Ag photocathode layer.

The performance characterization parameters of solar cells mainly include short-circuit current (J _SC ), open-circuit voltage (V _OC ), fill factor (FF) and photoelectric conversion efficiency (PCE). Among them, the photoelectric conversion efficiency is the most critical index to characterize solar cells, and it is also an industrial standard to measure the performance of solar cells. It represents the ratio of the maximum output power P _m to the incident power P _i per unit area of the cell, that is, PCE=P _m /P _i ＝(J _SC *V _OC *FF)/P _i ; fill factor represents the ratio of the maximum output power per unit light-receiving area to J _SC *V _OC , the larger the FF, the better the performance of the solar cell, so the fill factor of the solar cell The improvement is of great significance for the improvement of the photoelectric conversion efficiency of the device. The present invention measures the above-mentioned several parameters of the perovskite solar cell.

The perovskite solar cell device prepared in the comparative example was placed under a standard solar simulator, and the transparent electrode and the metal electrode were connected to the tester with a 3M test clip for testing. The schematic diagram of the test structure is shown in Figure 2.

In air at room temperature, under the light of 100mW/cm ² solar simulator (Newport) AM1.5G, the current-voltage value was measured using a current-voltage tester (Keithley2400). The measurement results are shown in Figure 3. Read out the open circuit voltage V _OC and short circuit current density J _SC , and calculate the fill factor FF, photoelectric conversion efficiency PCE, series resistance R _S , and parallel resistance R _SH , as shown in Table 1.

The PL spectrum test was carried out on the perovskite solar cell prepared in the comparative example, and the results are shown in Fig. 4 .

Example 1:

1. Add an equal volume of 2mol/L HCl solution dropwise to a 0.46mol/L titanium isopropoxide solution, and stir magnetically for 10 hours at a rate of 800rpm to obtain a _TiO precursor solution with a molar concentration of 0.23mol/L;

2. Mix according to the ratio of PbCl ₂ :CH ₃ NH ₃ I:DMF=1.2mmol:3mmol:1mL, and magnetically stir at 800rpm at 50°C for 12h to prepare a perovskite precursor solution with a mass concentration of 45wt%.

3. According to the ratio of 72.3g Spiro-OMeTAD, 28.8uL 4-tert-butylpyridine (TBP), 17.5uL lithium salt (Li-TFSI), dissolved in 1mL chlorobenzene solvent, mix them magnetically at a rate of 800rpm for 10h to obtain mole A hole transport layer precursor solution with a concentration of 0.17mol/L;

4. Use FTO conductive glass with a surface sheet resistance of 7Ω/sq, a light transmittance greater than 85%, and an etching area of 1/3 of the total area as the substrate and transparent electrode 1, as shown in Figure 1;

5. After treating the surface of the substrate with UV light with an intensity of 26mW/ ^cm2 for 20min, spin-coat the _TiO2 precursor solution at a speed of 6500rpm, heat it in the air at 150°C for 10min, and then raise the temperature at a rate of 10°C/min to Heating at 450° C. for 2 hours, and then treating the surface with oxygen plasma for 5 minutes to prepare a TiO ₂ dense layer with a film thickness of 30 nm as the electron transport layer 2;

6. Spin-coat a perovskite precursor solution with a concentration of 45wt% on the electron transport layer 2 with a spin-coating method at 2500rpm, spin for 45s, and anneal at 110°C for 50min to obtain a perovskite film with a layer thickness of 400nm As a light-absorbing layer, this process needs to be carried out in an inert gas atmosphere;

7. Use the spin coating method to spin coat the hole transport layer precursor solution with a concentration of 0.17mol/L on the light-absorbing layer 3, the rotation speed is 4000rpm, and the rotation time is 45s to obtain a hole transport layer with a film thickness of 100nm. in an inert gas atmosphere;

8. Under normal pressure, use a flow rate of 3L/min and a relative humidity of 48% at 25°C to blow stably and vertically at the sample device deposited with the hole transport layer for 10h (for the ART implementation group);

9. Using the vacuum thermal evaporation method, under the vacuum degree of 3.7×10 ^-4 Pa, the and The evaporation rate of 8nm MoO ₃ and 100nm Ag photocathode layer.

The perovskite solar cell prepared in this example was tested by the same method as the comparative example, and the test results are shown in Fig. 3, Fig. 4 and Table 1 respectively.

Example 2:

Using the same method as in Example 1, replace step 8 with: under normal pressure, with a flow rate of 3L/min, a relative humidity of 48% air flow at 45°C is stably blown vertically to the sample device after the hole transport layer is deposited 10h (implementation group for Air T45).

The perovskite solar cell prepared in this example was tested by the same method as in Example 1, and the test results are shown in Fig. 3, Fig. 4 and Table 1 respectively.

Embodiment 3:

Using the same method as in Example 1, replace step 8 with: under normal pressure, with a flow rate of 3 L/min, a relative humidity of 48% of the 65 ° C air stream is stably blown vertically to the sample device after the hole transport layer is deposited 10h (implementation group for Air T65).

The perovskite solar cell prepared in this example was tested by the same method as in Example 1, and the test results are shown in Fig. 3, Fig. 4 and Table 1 respectively.

Table 1 Volt-ampere performance parameters of perovskite solar cells

As can be seen from the above examples, the PCE of the perovskite solar cell prepared according to the preparation method provided by the present invention can reach up to 10.42%, the fill factor can reach more than 0.7, and the open circuit voltage V _OC and short circuit current J _SC can reach 0.95 respectively. V and 15.24 mA/cm ² .

The above descriptions are only preferred embodiments of the present invention, and do not limit the present invention in any form. It should be pointed out that those skilled in the art can make some improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims (10)

1. a preparation method for perovskite solaode, described perovskite solaode includes successively Electro-conductive glass, electron transfer layer, calcium titanium ore bed, hole transmission layer, photocathode decorative layer and the light arranged Cathode layer, it is characterised in that described hole transmission layer is carried out humid air process.

Preparation method the most according to claim 1, it is characterised in that described humid air processes tool Body is: before photocathode decorative layer coats, with humid air to electro-conductive glass, electron transfer layer, calcium titanium Jet in the surface of the hole transmission layer in ore bed and four layers of structure of composite membrane of hole transmission layer.

Preparation method the most according to claim 2, it is characterised in that described humid air relative Humidity is 30～50%.

Preparation method the most according to claim 3, it is characterised in that described humid air relative Humidity is 35～49%.

5. according to the preparation method described in claim 3 or 4, it is characterised in that described humid air Temperature is 20～65 DEG C.

Preparation method the most according to claim 5, it is characterised in that the temperature of described humid air It it is 40～55 DEG C.

Preparation method the most according to claim 2, it is characterised in that the winding-up of described humid air Flow velocity is 2～4L/min.

Preparation method the most according to claim 1 and 2, it is characterised in that at described humid air The time of reason is 8～12h.

Preparation method the most according to claim 2, it is characterised in that the direction of described winding-up is vertical Straight in hole transmission layer surface.

10. the perovskite solaode that prepared by preparation method described in claim 1～9 any one.