CN106025074B - A kind of perovskite solar cell and preparation method thereof - Google Patents
A kind of perovskite solar cell and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K71/811—Controlling the atmosphere during processing
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The present invention provides a kind of perovskite solar cell and preparation method thereof.The present invention reduces contact resistance, electrical conductance is improved, and then lifts battery current, improves solar cell photoelectric characteristic by handling the humid air of hole transport layer film；Simultaneously, processing procedure promotes oxygen and preferably spread in hole transmission layer and calcium titanium ore bed, reduce trap density, reduce the interface resistance and charge recombination rate between hole transmission layer and calcium titanium ore bed, charge-trapping and transmittability are improved, and then lifts battery current and voltage, improves solar cell photoelectric characteristic, perovskite solar cell fill factor, curve factor prepared by preparation method provided by the invention is up to more than 0.7, and short-circuit current density is up to 15.24mA/cm2, open-circuit voltage reaches as high as 10.42% up to 0.95V, photoelectric transformation efficiency, has good photoelectric properties.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of perovskite solar cell and its preparation side
Method.
Background technology
Solar cell, also known as photovoltaic cell, it is that directly luminous energy is converted into by photoelectric effect or photochemical effect
The device of electric energy.At present, in the market is based on silica-based solar cell, but its manufacturing process is complicated, and energy consumption is big, cost
Height, seriously constrain its large-scale promotion application.
Since two thousand nine, perovskite solar cell is by higher quantum efficiency, short-circuit current density, open-circuit voltage
Deng and receive much concern, it is mainly using having ABX3(A=CH3NH3 +, HC (NH2)2+Deng；B=Pb2+, Sn2+Deng；X=Cl-,
Br-, SCN-, I-Deng) photovoltaic material of perovskite structure realizes opto-electronic conversion, have efficiency high, light weight, manufacture craft it is simple,
The features such as large area flexible device can be prepared into outstanding advantages.Its upside-down mounting basic structure be followed successively by from bottom to top glass substrate, thoroughly
Prescribed electrode layer, electron transfer layer, perovskite material light-absorption layer, hole transmission layer, metal electrode, similar to p- (pi)-i- (in)-
N sandwich construction, it is so far, except silicon solar cell, unijunction efficiency highest solar cell.
, can be with the air of high humidity but the perovskite material light-absorption layer of perovskite solar cell is very sensitive to water
The crystal structure that chemically reacts and then destroy occurs for water, causes battery performance to reduce.Therefore, the preparation of perovskite solar cell and
Using controlling under conditions of relative air humidity is less than 30%, which greatly limits its application.
The content of the invention
It is an object of the invention to provide a kind of perovskite solar cell and preparation method thereof.What the present invention was prepared
Perovskite solar cell can be used in the high air of relative humidity, have good photoelectric properties.
The invention provides a kind of preparation method of perovskite solar cell, the perovskite solar cell include according to
Electro-conductive glass, electron transfer layer, calcium titanium ore bed, hole transmission layer, photocathode decorative layer and the photocathode layer of secondary setting, to described
Hole transmission layer carries out humid air processing.
Preferably, the humid air, which is handled, is specially：Before the coating of photocathode decorative layer, with humid air to conductive glass
Glass, electron transfer layer, the surface of hole transmission layer in four layers of structure of composite membrane of calcium titanium ore bed and hole transmission layer are blown.
Preferably, the relative humidity of the humid air is 30~50%.
Preferably, the relative humidity of the humid air is 35~49%.
Preferably, the temperature of the humid air is 20~65 DEG C.
Preferably, the temperature of the humid air is 40~55 DEG C.
Preferably, the injection flow velocity of the humid air is 2~4L/min.
Preferably, the time of the humid air processing is 8~12h.
Preferably, the direction of the injection is perpendicular to hole transport layer surface.
Present invention also offers perovskite solar cell prepared by preparation method described in above-mentioned technical proposal.
The present invention is by handling the humid air of hole transport layer film, using in high relative humidity dissolving films
Partial organic substances, accelerate material to contribute to the process of reconstruction of film in the transmission of interlayer, and then help to reduce the contact of device
Resistance, the carrier lifetime of lifting film interlayer transmission, is diminished, electrical conductance is improved, Jin Erti by the leakage current of battery
Battery current is risen, improves solar cell photoelectric characteristic；Meanwhile air-flow processing procedure promotes oxygen in hole transmission layer and calcium
Preferably spread in titanium ore layer so that thin-film material can improve the oxidation journey of hole transmission layer preferably with air contact
Degree and crystallinity, reduce trap density, reduce interface resistance and charge recombination between hole transmission layer and calcium titanium ore bed
Rate, be advantageous to improve charge-trapping and transmittability, and then lift battery current and voltage, it is special to improve solar cell photoelectric
Property.Test result indicates that the perovskite solar cell fill factor, curve factor for preparing of preparation method provided by the invention up to 0.7 with
On, short-circuit current density is up to 15.24mA/cm2, open-circuit voltage reaches as high as 10.42% up to 0.95V, photoelectric transformation efficiency,
With good photoelectric properties.
Preparation method provided by the invention is simple to operate, mild condition, energy consumption is low, cost is cheap, technique is easily-controllable, suitable big
Technical scale is promoted.
Brief description of the drawings
Fig. 1 is electro-conductive glass structural representation in comparative example of the present invention and embodiment；
Fig. 2 is the performance test structural representation of comparative example and embodiment perovskite solar cell, wherein：1-FTO is led
Electric glass；2-TiO2Electron transfer layer；3- perovskites CH3NH3PbIxCl3-xLight-absorption layer；4-Spiro-OMeTAD hole transmission layers；
5-MoO3Anode modification layer；6-Ag metal electrodes；7- plain conductors；8- is loaded or test device；9- incident lights；
Fig. 3 is the VA characteristic curve of perovskite solar cell prepared by comparative example of the present invention and embodiment；
Fig. 4 is the PL spectrograms of perovskite solar cell prepared by comparative example of the present invention and embodiment.
Embodiment
The invention provides a kind of preparation method of perovskite solar cell, the perovskite solar cell include according to
Electro-conductive glass, electron transfer layer, calcium titanium ore bed, hole transmission layer, photocathode decorative layer and the photocathode layer of secondary setting, to described
Hole transmission layer carries out humid air processing.
In the present invention, the humid air processing is preferably before the coating of photocathode decorative layer, with humid air to leading
Electric glass, electron transfer layer, the surface of hole transmission layer in four layers of structure of composite membrane of calcium titanium ore bed and hole transmission layer are carried out
Injection.
In the present invention, the preparation of the perovskite solar cell preferably includes following steps：
(1) electron transfer layer, calcium titanium ore bed and hole transmission layer are coated successively in conductive glass surface, obtain four layers it is compound
Membrane structure；
(2) humid air processing is carried out to the surface of hole transmission layer described in step (1)；
(3) the hole transport layer surface after step (2) described processing coats photocathode decorative layer and time basic unit successively,
Obtain perovskite solar cell.
The present invention does not have special restriction to the species of the electro-conductive glass, using conduction well known to those skilled in the art
Glass.In the present invention, the electro-conductive glass is preferably FTO electro-conductive glass or ITO electro-conductive glass, and more preferably FTO is led
Electric glass.In the present invention, the square resistance of the FTO electro-conductive glass is preferably 6~8 Ω/sq, more preferably 6.5~7.5
Ω/sq；The light transmittance of the FTO electro-conductive glass is preferably greater than 85%, and more preferably 88~95%；The FTO electro-conductive glass
Etching area be preferably the 1/4~1/2 of the gross area, more preferably 1/3；The area of the FTO electro-conductive glass is preferably 14~
16mm × 14~16mm.In the present invention, the FTO electro-conductive glass is as light anode layer, have good chemical stability and
Good photoelectric properties.
Preferably conductive glass surface is pre-processed first in the present invention.In the present invention, the preferred bag of the pretreatment
Include treatment with ultraviolet light.In the present invention, the wavelength of the ultraviolet light is preferably 350~450nm；The intensity of the ultraviolet light is preferred
For 24~28mW/cm2.In the present invention, the time of the treatment with ultraviolet light is preferably 15~25min, more preferably 18~
22min.In the present invention, the treatment with ultraviolet light can remove the organic impurities of conductive glass surface residual, improve conductive glass
Glass surface topography.
After completing the pretreatment, the conductive glass surface that the present invention preferably obtains in the pretreatment coats electronics successively
Transport layer, calcium titanium ore bed and hole transmission layer, obtain four layers of structure of composite membrane.System of the present invention to four layers of structure of composite membrane
It is standby without special restriction, using the system of four layers of structure of composite membrane in perovskite solar cell well known to those skilled in the art
Preparation Method.
The present invention does not have special restriction to the material of the electron transfer layer, using use well known to those skilled in the art
In the material of electron transfer layer.In the present invention, the electron transfer layer is preferably TiO2Or ZnO, more preferably TiO2。
In the present invention, the thickness of the electron transfer layer is preferably 30~60nm, more preferably 40~50nm.In the present invention, institute
State electron transfer layer and form Ohmic contact with calcium titanium ore bed, can effectively transmit electronics, while effectively stop hole transport.
The present invention preferably coats electron transfer layer on electro-conductive glass, obtains two-layer compound membrane structure.In the present invention, institute
The mode for stating coating is preferably sputtering, deposition or spin coating；The present invention is more preferably by TiO2Precursor solution is applied in a manner of spin coating
It is layed onto conductive glass surface.In the present invention, the rotating speed of the spin coating is preferably 6000~7000rpm, more preferably 6400~
6600rpm.In the present invention, the spin coating is preferably carried out in an inert atmosphere.
In the present invention, the TiO2The molar concentration of precursor solution is preferably 0.18~0.3mol/L, more preferably
0.2~0.25mol/L.In the present invention, the TiO2Precursor solution is preferably mixed to get by titanium source solution and hydrochloric acid solution.
In the present invention, the titanium source and the mol ratio of hydrochloric acid are preferably 0.18~0.3:1, more preferably 0.2~0.25:1.In this hair
In bright, the titanium source is preferably organic titanium source, more preferably specially isopropyl titanate.In the present invention, the titanium source solution is molten
Agent is preferably alcohols solvent, more preferably the one or more in methanol, ethanol and propyl alcohol.In the present invention, the titanium source is molten
The molar concentration of liquid is preferably 0.4~0.5mol/L, more preferably 0.43~0.48mol/L.In the present invention, the hydrochloric acid
Molar concentration is preferably 1.5~2.5mol/L, more preferably 1.8~2.2mol/L.
To make TiO2Precursor solution is uniform in conductive glass surface covering, and the present invention is preferably laggard in the completion spin coating
Row preheating.In the present invention, the temperature of the preheating is preferably 140~160 DEG C, more preferably 145~155 DEG C；The insulation
Time be preferably 5~15min, more preferably 8~12min.
After completing the preheating, the two-layer compound membrane structure obtained after the preheating is preferably heated to annealing temperature by the present invention
Degree is incubated.In the present invention, the speed of the heating is preferably 8~12 DEG C/min；The annealing temperature is preferably 400~
500 DEG C, more preferably 440~460 DEG C；The time of the insulation is preferably 1.5~2.5h, more preferably 1.8~2.2h.At this
In invention, the annealing can improve the crystallization degree of titanium dioxide.
After completing the annealing, the two-layer compound membrane structure obtained after the annealing is preferably carried out oxygen plasma by the present invention
Body processing.In the present invention, the time of the oxygen plasma processing is preferably 4~6min.In the present invention, described oxygen etc. from
Daughter processing can remove surface residue after titanium dioxide layer sintering, improve substrate pattern.
After completing the oxygen plasma processing, the present invention preferably coats calcium titanium ore bed in the electric transmission layer surface,
Obtain sandwich diaphragm structure.In the present invention, the calcium titanium ore bed is preferably CH3NH3PbIxCl3-x, 0<x<3, the x is more excellent
Elect 1~2 as.In the present invention, the thickness of the calcium titanium ore bed is preferably 350~450nm, more preferably 380~420nm, most
Preferably 390~410nm.In the present invention, the calcium titanium ore bed is as photoactive layer, can absorb to greatest extent it is ultraviolet-
The photon of visible spectral range, and then excite the transmission of separation of charge and carrier.
In the present invention, the mode of the coating calcium titanium ore bed is preferably double source coevaporation, gas phase assisted solution or solution
Spin coating；Perovskite precursor solution is more preferably spin-coated on electric transmission layer surface by the present invention.In the present invention, the spin coating
Speed is preferably 2000~3000rpm, more preferably 2400~2600rpm.In the present invention, the spin coating is preferably in indifferent gas
Carried out in atmosphere.
In the present invention, the mass concentration of the perovskite precursor solution is preferably 40~50wt%, and more preferably 44
~46wt%.The present invention is preferably by PbCl2、CH3NH3I mixes with solvent, and heating response obtains perovskite precursor solution.At this
In invention, the PbCl2And CH3NH3I mol ratio is preferably 0.3~0.5:1.In the present invention, the solvent is preferably two
One or more in methyl sulfoxide, acetonitrile and dimethylformamide, more preferably dimethyl sulfoxide (DMSO), acetonitrile and dimethyl formyl
One kind in amine.
In the present invention, the mixing is preferably carried out under agitation.In the present invention, the stirring is preferably magnetic force
Stirring；The speed of the stirring is preferably 700~900rpm, more preferably 750~850rpm；The time of the stirring is preferably
10~14h, more preferably 11~13h.In the present invention, the temperature of the reaction is preferably 45~55 DEG C, more preferably 48~
52℃。
To improve the crystallization degree of calcium titanium ore bed, the present invention is preferably annealed after the spin coating is completed, and obtains three layers
Structure of composite membrane.In the present invention, the temperature of the annealing is preferably 100~120 DEG C, more preferably 105~115 DEG C；It is described
The time of annealing is preferably 40~60min, more preferably 45~55min.
After obtaining sandwich diaphragm structure, the present invention preferably coats on the calcium titanium ore bed surface of the sandwich diaphragm structure
Hole transmission layer, obtain four layers of structure of composite membrane.The present invention does not have special restriction to the material of the hole transmission layer, uses
Material well known to those skilled in the art for hole transmission layer.In the present invention, the hole transmission layer is preferably
The fluorenes (i.e. Spiro-OMeTAD) of 2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells two, 3- hexyl thiophenes
Polymer (i.e. P3HT), 4,4- azos double (4- cyanopentanoic acids) (i.e. PTAA), CuSCN or CuI, can be specially in the present invention
Spiro-OMeTAD.In the present invention, the thickness of the hole transmission layer is preferably 100~300nm, more preferably 180~
220nm.In the present invention, the hole transmission layer can form Ohmic contact with calcium titanium ore bed, effective transporting holes and can have
Effect stops the transmission of electronics.
In the present invention, the mode of the coating hole transmission layer is preferably deposition or spin coating；The present invention is more preferably by sky
Cave transport layer precursor solution is spin-coated on calcium titanium ore bed surface.In the present invention, the speed of the spin coating be preferably 3500~
4500rpm, more preferably 3800~4200rpm.In the present invention, the spin coating is preferably carried out in an inert atmosphere.
In the present invention, the molar concentration of the hole transmission layer precursor solution is preferably 0.15~0.2mol/L.This
Invention preferably mixes Spiro-OMeTAD, 4- tert .-butylpyridine (i.e. TBP), the acetonitrile solution of lithium salts (i.e. Li-TFSI) and solvent
Close, obtain hole transmission layer precursor solution.In the present invention, the solvent is preferably chlorobenzene or chloroform.
After obtaining four layers of structure of composite membrane, the present invention carries out moist empty to the hole transmission layer of four layers of structure of composite membrane
Gas disposal.In the present invention, the humid air processing is preferred is specially：Before the coating of photocathode decorative layer, humid air is used
Hole transport layer surface in four layers of structure of composite membrane is blown.In the present invention, the direction of the injection is preferably to hang down
Directly in hole transmission layer.
In the present invention, the relative humidity of the humid air is preferably 30~50%, and more preferably 35~49%；It is described
The temperature of humid air is preferably 20~65 DEG C, more preferably 40~55 DEG C；The flow velocity of the humid air is preferably 2~4L/
min.In the present invention, the time of the humid air processing is preferably 8~12h.
After completing humid air processing, hole transport layer surface coating of the present invention preferably after humid air processing
Photocathode decorative layer, obtain five layers of structure of composite membrane.The present invention does not have special restriction to the material of the photocathode decorative layer,
Using the material well known to those skilled in the art for photocathode decorative layer.In the present invention, the photocathode modification
Layer is preferably MoO3.In the present invention, the thickness of the photocathode decorative layer is preferably 5~10nm.In the present invention, the light
Cathodic modification layer promotes hole preferably to transmit.
In the present invention, the mode of the coating is preferably vacuum evaporation.In the present invention, the vacuum of the vacuum evaporation
Degree is preferably more than 3.5 × 10-4Pa, more preferably 3.6~4 × 10-4Pa；The evaporation rate of the vacuum evaporation is preferably
After the coating for completing the photocathode decorative layer, the present invention is preferably in photocathode modification layer surface coating time
Pole layer, obtain perovskite solar cell.In the present invention, the photocathode layer is preferably Au or Ag, more preferably Ag.At this
In invention, the thickness of the photocathode layer is preferably 80~120nm, more preferably 90~110nm.In the present invention, the painting
The mode covered is preferably vacuum evaporation.In the present invention, the vacuum of the vacuum evaporation is preferably more than 3.5 × 10-4Pa,
More preferably 3.6~4 × 10-4Pa；The evaporation rate of the vacuum evaporation is preferably
In order to further illustrate the present invention, the system with reference to embodiment to perovskite solar cell provided by the invention
Preparation Method is described in detail, but they can not be interpreted as into limiting the scope of the present invention.
Comparative example:
1. instill isometric 2mol/L HCl solution dropwise into 0.46mol/L titanium isopropoxide solution, with it is mole dense
Spend the TiO for 0.23mol/L2Precursor solution；
2. according to PbCl2:CH3NH3I:DMF=1.2mmol:3mmol：1mL ratio mixing, the magnetic agitation at 50 DEG C
12h, the perovskite precursor solution that mass concentration is 45wt% is made；
3. 72.3g Spiro-OMeTAD, 28.8uL 4- tert .-butylpyridines (TBP) are pressed, 17.5uL lithium salts (Li-TFSI),
Be dissolved in the ratio of 1mL chlorobenzene solvents, with molar concentration be 0.17mol/L hole transmission layer precursor solution；
4. using surface square resistance as 7 Ω/sq, light transmittance is more than 85%, and etching area is 1/3 FTO of the gross area
Electro-conductive glass is as substrate and transparency electrode 1, as shown in Figure 1；
5. intensity is used as 26mW/cm2UV treatment with ultraviolet light substrate surfaces 20min after, using rotating speed be 6500rpm revolve
Apply TiO2Precursor solution, 150 DEG C are first heated 10min in atmosphere, are warming up to immediately at 450 DEG C and are heated 2h, afterwards to its oxygen
Plasma treated surface 5min, the TiO that film thickness is 30nm is made2Compacted zone is as electron transfer layer 2；
6. use spin-coating method on electron transfer layer 2 spin coating concentration for 45wt% perovskite precursor solution, rotating speed
For 2500rpm, rotational time 45s, then anneal 50min at 105 DEG C, obtains the perovskite thin film conduct that thickness is 400nm
Light-absorption layer, this process need to be carried out in atmosphere of inert gases；
7. using spin-coating method spin coating concentration 0.17mol/L on light-absorption layer 3 hole transmission layer precursor solution, rotating speed
For 4000rpm, rotational time 45s, the hole transmission layer that film thickness is 100nm is obtained, this process need to be in atmosphere of inert gases
Middle progress；
8. device is moved on under normal temperature and pressure of the relative humidity less than 30% and stands 10h (for NRT groups)；
It is 3.7 × 10 in vacuum 9. using vacuum thermal evaporation method-4Under Pa, respectively withWithEvaporation
8nm MoO are made in speed3And 100nm Ag photocathode layer.
Solar cell properties characterization parameter mainly has short circuit current (JSC), open-circuit voltage (VOC), fill factor, curve factor (FF) and
Photoelectric transformation efficiency (PCE).Wherein, photoelectric transformation efficiency is to characterize the most critical index of solar cell, and weighs the sun
The industrial standard of energy battery performance, represents the peak power P exported on the battery of unit areamWith incident power PiRatio, i.e.,
PCE=Pm/Pi=(JSC*VOC*FF)/Pi；Fill factor, curve factor represents the peak power output and J of unit light-receiving areaSC*VOCRatio
Value, FF is bigger, represents that solar cell properties are better, so the raising of solar cell fill factor, curve factor, turns for device photoelectric
It is significant to change improved efficiency.The present invention is measured to above-mentioned several parameters of perovskite solar cell.
The perovskite solar cell device that comparative example is prepared is placed under standard solar simulator, tested with 3M
Press from both sides transparency electrode and metal electrode connecting test instrument, tested, test structure schematic diagram is as shown in Figure 2.
In air at room temperature, using 100mW/cm2Under solar simulator (Newport) AM1.5G illumination, using electric current-
Voltage tester (Keithley2400) measures current-voltage value, and measurement result is as shown in Figure 3.Read open-circuit voltage VOC, short circuit
Current density, JSCValue, and calculate fill factor, curve factor FF, photoelectric transformation efficiency PCE and series resistance RS, parallel resistance RSH, such as table
Shown in 1.
PL spectrum tests are carried out to perovskite solar cell prepared by comparative example, as a result as shown in Figure 4.
Embodiment 1:
1. isometric 2mol/L HCl solution is added dropwise into 0.46mol/L titanium isopropoxide solution, in 800rpm speed
Magnetic agitation 10h under rate, obtain the TiO that molar concentration is 0.23mol/L2Precursor solution；
2. according to PbCl2:CH3NH3I:DMF=1.2mmol:3mmol:1mL ratio mixes, in 800rpm speed at 50 DEG C
Magnetic agitation 12h under rate, the perovskite precursor solution that mass concentration is 45wt% is made；
3. pressing 72.3g Spiro-OMeTAD, 28.8uL4- tert .-butylpyridines (TBP), 17.5uL lithium salts (Li-TFSI) is molten
Mixed in the ratio of 1mL chlorobenzene solvents, the magnetic agitation 10h under 800rpm speed, obtain the sky that molar concentration is 0.17mol/L
Cave transport layer precursor solution；
4. using surface square resistance as 7 Ω/sq, light transmittance is more than 85%, and etching area is 1/3 FTO of the gross area
Electro-conductive glass is as substrate and transparency electrode 1, as shown in Figure 1；
5. intensity is used as 26mW/cm2UV treatment with ultraviolet light substrate surfaces 20min after, using rotating speed be 6500rpm revolve
Apply TiO2Precursor solution, 150 DEG C are first heated 10min in atmosphere, are warming up at 450 DEG C heat with 10 DEG C/min speed immediately
2h, surface 5min is handled to its oxygen plasma afterwards, the TiO that film thickness is 30nm is made2Compacted zone is as electric transmission
Layer 2；
6. use spin-coating method on electron transfer layer 2 spin coating concentration for 45wt% perovskite precursor solution, rotating speed
For 2500rpm, rotational time 45s, anneal at 110 DEG C 50min, obtains perovskite thin film that thickness is 400nm as light-absorption layer,
This process need to be carried out in atmosphere of inert gases；
7. using spin-coating method spin coating concentration 0.17mol/L on light-absorption layer 3 hole transmission layer precursor solution, rotating speed
For 4000rpm, rotational time 45s, the hole transmission layer that film thickness is 100nm is obtained, this process need to be in atmosphere of inert gases
Middle progress；
8. at ambient pressure, with flow velocity 3L/min, 25 DEG C of air draughts stabilization that relative humidity is 48% vertically blows to deposition
There is the samples devices 10h after hole transmission layer (for ART implementations group)；
It is 3.7 × 10 in vacuum 9. using vacuum thermal evaporation method-4Under Pa, respectively withWithEvaporation
8nm MoO are made in speed3And 100nm Ag photocathode layer.
Tested, surveyed using the perovskite solar cell that the present embodiment is prepared with comparative example identical method
Test result is respectively as shown in Fig. 3, Fig. 4 and table 1.
Embodiment 2:
Using method same as Example 1, step 8 is replaced with：At ambient pressure, with flow velocity 3L/min, relative humidity
The samples devices 10h after having hole transmission layer is deposited (for Air T45 implementations for 48% stable vertically blow to of 45 DEG C of air draughts
Group).
The perovskite solar cell that the present embodiment is prepared using method same as Example 1 is tested,
Test result is respectively as shown in Fig. 3, Fig. 4 and table 1.
Embodiment 3:
Using method same as Example 1, step 8 is replaced with：At ambient pressure, with flow velocity 3L/min, relative humidity
The samples devices 10h after having hole transmission layer is deposited (for Air T65 implementations for 48% stable vertically blow to of 65 DEG C of air draughts
Group).
The perovskite solar cell that the present embodiment is prepared using method same as Example 1 is tested,
Test result is respectively as shown in Fig. 3, Fig. 4 and table 1.
The volt-ampere performance parameter of the perovskite solar cell of table 1
As can be seen from the above embodiments, the perovskite solar cell prepared according to preparation method provided by the invention
PCE reaches as high as 10.42%, and fill factor, curve factor is up to more than 0.7, open-circuit voltage VOCWith short circuit current JSCRespectively up to 0.95V and
15.24mA/cm2。
Described above is only the preferred embodiment of the present invention, not makees any formal limitation to the present invention.Should
Point out, for those skilled in the art, under the premise without departing from the principles of the invention, if can also make
Dry improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of perovskite solar cell, the perovskite solar cell includes the conductive glass set gradually
Glass, electron transfer layer, calcium titanium ore bed, hole transmission layer, photocathode decorative layer and photocathode layer, it is characterised in that to the sky
Cave transport layer carries out humid air processing.
2. preparation method according to claim 1, it is characterised in that the humid air, which is handled, is specially：In photocathode
Before decorative layer coating, with humid air to four layers of electro-conductive glass, electron transfer layer, calcium titanium ore bed and hole transmission layer composite membrane knot
The surface of hole transmission layer in structure is blown.
3. preparation method according to claim 2, it is characterised in that the relative humidity of the humid air be 30~
50%.
4. preparation method according to claim 3, it is characterised in that the relative humidity of the humid air be 35~
49%.
5. the preparation method according to claim 3 or 4, it is characterised in that the temperature of the humid air is 20~65 DEG C.
6. preparation method according to claim 5, it is characterised in that the temperature of the humid air is 40~55 DEG C.
7. preparation method according to claim 2, it is characterised in that the injection flow velocity of the humid air is 2~4L/
min。
8. preparation method according to claim 1 or 2, it is characterised in that the time of humid air processing for 8~
12h。
9. preparation method according to claim 2, it is characterised in that the direction of the injection is perpendicular to hole transmission layer
Surface.
10. perovskite solar cell prepared by preparation method described in claim 1~9 any one.
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| CN201610446345.9A CN106025074B (en) | 2016-06-16 | 2016-06-16 | A kind of perovskite solar cell and preparation method thereof |
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