CN111740018B - Cascade structure organic photoelectric detector and preparation method thereof - Google Patents
Cascade structure organic photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
A broadband, low-noise and ultra-fast response cascade structure organic photoelectric detector and a preparation method thereof belong to the technical field of organic photoelectric devices. Comprises ITO conductive glass cathode, ZnO cathode buffer layer, PTB7-Th, ITIC bottom active layer, and MoO 3 the/Ag/PEIE internal composite region, PTB7-Th, FOIC top active layer, MoO 3 The anode buffer layer and the Ag anode. Under the condition of full-color light irradiation, the internal composite area forms a composite center, so that the normal work of the photoelectric detection of the cascade structure is ensured; when the device is irradiated by monochromatic light, only the bottom subunit or the top subunit in the device shows the characteristic of a p-i-n junction, and the other subunit is equivalent to a conductor to carry out carrier transmission, so that the interface capture effect in the device is reduced, and the response speed of the device is improved; MoO in dark State 3 And PEIE blocks electrons from the top layer and holes from the bottom layer, respectively, effectively increasing injection barriers/potential wells of electrons and holes, and reducing dark current.
Description
Technical Field
The invention belongs to the technical field of organic photoelectric devices, and particularly relates to an organic photoelectric detector with a cascade structure and a preparation method thereof.
Background
Organic Photodetectors (OPDs) prepared by solution methods are of great interest because of their low cost, light weight, ease of processing, and flexibility. The ultra-fast response and high-sensitivity detection of the organic photoelectric detector aiming at visible light and near infrared light are necessary conditions suitable for the fields of medical detection, artificial intelligence and the like. Until now, the organic photoelectric detector has respectively realized the broadband and high-sensitivity detection of ultraviolet-visible light-near infrared light, but the development of the organic photoelectric detector is still limited by the problem of slow response speed (microsecond order). Due to the facts that most organic materials are low in carrier mobility, insufficient in absorption range, large in resistance-capacitance (RC) time constant, large in interface trapping effect of devices and the like, the organic materials which are high in carrier mobility and wide in absorption are properly replaced to serve as active layers, the RC time constant of the devices is reduced by optimizing the thickness of the active layers and replacing proper photoelectric detector structures, the interface trapping effect of the devices is reduced through structural design, the response speed of the photoelectric detectors is effectively improved, and the high-sensitivity and wide-range ultra-fast organic photoelectric detectors are achieved.
Disclosure of Invention
The invention aims to provide a cascade-structure organic photoelectric detector with broadband, low noise and ultra-fast response and a preparation method thereof by adopting a simple process.
The cascade-structure organic photoelectric detector sequentially comprises an ITO conductive glass cathode, a ZnO cathode buffer layer, a PTB7-Th, an ITIC bottom active layer and MoO from bottom to top 3 the/Ag/PEIE internal composite region, PTB7-Th, FOIC top active layer, MoO 3 An anode buffer layer and an Ag anode. Donor material PTB7-Th (poly [4,8-bis (5(2-ethylhexyl) thiophen-2-yl) benzol [1,2-b:4,5-b ') selected in device']dithiopheneco-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) And receptor material ITIC (3,9-bis (2-methyl- (3- (1, 1-dicyclomethylene) -indanone)) -5,5,11,11-tetrakis (4-xylphenyl) -dithieno [2,3-d:2 ', 3 ' -d ']-s-indaceno[1,2-b:5,6-b’]dithiophene) mainly absorbs visible light, non-fullerene material FOIC mainly absorbs near-infrared light, and acceptor materials with complementary absorption spectra provide basic conditions for realizing a broadband detector. MoO 3 In the/Ag/PEIE internal recombination region, MoO 3 As an electron blocking layer and PEIE as a hole blocking layer, under the condition of full-color light irradiation, the inner recombination zone forms a recombination center, and electrons and holes with equal quantity are arranged on two sides of the inner recombination zoneAnd compounding in the internal compounding area to ensure the normal work of the organic photoelectric detector. MoO in internal recombination zone under dark state condition 3 And the PEIE can respectively block electrons from the top active layer and holes from the bottom active layer, so that the injection potential barrier/potential well of the electrons and the holes is effectively improved, the dark current is reduced, the lower noise current is further caused, and the sensitivity of the device can be effectively improved.
The cascade organic photoelectric detector is equivalent to a circuit formed by connecting two p-i-n junctions in series, a visible light part and a near infrared light part are equivalent to two p-i-n junctions, and each junction comprises a junction resistor and a junction capacitor; parasitic capacitance of the device is formed by C p Represents; the equivalent cascade resistance of the device is represented by R s It includes the bulk resistance of the organic material, the electrode resistance, and the contact resistance between the layers. When monochromatic light enters from the ITO side, one of the visible light part and the near infrared light part effectively absorbs the monochromatic light of the waveband to generate carriers, and the carrier shows the characteristic of a p-i-n junction. And the other one of the two can not generate a carrier because of no corresponding light absorption, and is equivalent to a flat capacitor in a circuit, and the carrier does not need to pass through an interface and is collected by a corresponding electrode, so that the interface capture effect is greatly reduced, and the ultra-fast response of the cascade device is realized.
The invention relates to a preparation method of a broadband, low-noise and ultrafast-response organic photoelectric detector with a cascade structure, which comprises the following steps:
1) ultrasonically cleaning ITO conductive glass for 15-30 min by using isopropanol, acetone, ethanol and deionized water in sequence, then introducing nitrogen to dry for 20-40 min, and then treating for 10-15 min by using ultraviolet ozone to serve as a cathode 1;
2) dissolving 15-30 g of zinc acetate in 145-290 mu L of dimethoxyethanol solution, adding 5-10 mu L of ethanolamine to prepare ZnO solution with the concentration of 50-200 mg/mL, stirring at room temperature for 8-12 h, and then spin-coating on a cathode 1 at the spin-coating speed of 3000-4000 rpm for 30-40 s to obtain a ZnO cathode buffer layer 2 with the thickness of 30-40 nm;
3) the bottom active layer adopts a form of bulk heterojunction prepared from a polymer donor material and a non-fullerene small molecule acceptor material: mixing the components in a mass ratio of 1: 1-1.4 of donor material PTB7-Th and acceptor material ITIC, mixing and dissolving in Chlorobenzene (CB) solution, wherein the total concentration of the donor material and the acceptor material is 15-20 mg/mL, stirring uniformly at 20-25 ℃, and then spin-coating on a ZnO cathode buffer layer 2 at the spin-coating speed of 800-1500 rpm for 40-60 s to obtain a bottom active layer 3 with the thickness of 100-120 nm;
4) the internal recombination zone 4 is prepared on the bottom active layer 3 by vacuum evaporation of a vapour deposition system: in a multi-source organic vapor phase molecular deposition system, at 2X 10 -4 ～6×10 -5 Preparing MoO with the thickness of 8-12 nm on the bottom active layer 3 by a thermal evaporation method under the Pa condition 3 Layer, subsequently in MoO 3 Evaporating an ultrathin Ag layer with the thickness of 8-12 nm on the layer; dissolving a 37 wt% PEIE aqueous solution in a dimethoxy ethanol solution with the concentration of 0.1-0.2 v%, and spin-coating the PEIE solution on the ultrathin Ag layer by using a spin-coating method with the rotation speed of 4000-6000 rpm and the spin-coating time of 30-40 s to obtain a PEIE layer with the thickness of 10-15 nm, thereby forming MoO 3 an/Ag/PEIE internal complex region 4;
5) the top active layer also adopts a form of bulk heterojunction prepared by a polymer donor material and a non-fullerene small molecule acceptor material: mixing the components in a mass ratio of 1: 1.5-2 of donor material PTB7-Th and acceptor material FOIC which are mixed and dissolved in Chloroform (CF) solution, wherein the total concentration of the donor material and the acceptor material is 6-10 mg/mL, the mixture is uniformly stirred at the temperature of 20-25 ℃, and then the mixture is spin-coated on an internal composite region 4 at the spin-coating speed of 1000-2500 rpm for 40-60 s to obtain a top active layer 5 with the thickness of 80-110 nm;
6) the anode buffer layer 6 is prepared on the top active layer 5 by vacuum evaporation of a vapour deposition system: in a multi-source organic vapor phase molecular deposition system, at 2X 10 -4 ～6×10 -5 Preparing MoO with a thickness of 3.5-5 nm on the top active layer 5 by a thermal evaporation method under the condition of Pa 3 Layer to obtain an anode buffer layer 6;
7) the anode 7 is prepared on the anode buffer layer 6 by vacuum evaporation of a vapor deposition system: in a multi-source organic vapor phase molecular deposition system, at 2X 10 -4 ～6×10 -5 And under the condition of Pa, performing vapor deposition on Ag with the thickness of 60-80 nm on the anode buffer layer 6 to obtain an anode 7, thereby preparing the broadband, low-noise and ultrafast-response organic photoelectric detector with the cascade structure.
In the internal recombination zone 4 prepared according to the invention, MoO 3 As an electron blocking layer, PEIE acts as a hole blocking layer and also has a function of lowering the work function. MoO under full color light irradiation 3 the/Ag/PEIE composite connecting layer exists in the photoelectric detector as a recombination center, and electrons and holes which are equal to each other on two sides of the internal recombination zone meet and recombine in the internal recombination zone, as shown in figure 4.
As shown in FIG. 5, in the dark state, the electron injection barrier of the photodetector without the internal recombination region is the difference between the LUMO level of the acceptor material and the Ag electrode work function, the hole injection potential well is expressed as the difference between the HOMO level of the donor material and the ITO work function, and for the photodetector with the internal recombination region, the MoO in the internal recombination region 3 The PEIE can respectively and effectively block electrons from the top layer and holes from the bottom layer, a higher electron injection potential barrier and a higher hole injection potential well are formed, the effect of reducing dark current is achieved, the noise current of the device is reduced due to low dark current, and higher detection sensitivity is further obtained; meanwhile, the design of the cascade structure reduces the interface capture effect, so that the response speed of the device is effectively improved.
Drawings
FIG. 1: the invention discloses a structural schematic diagram of a broadband, low-noise and ultrafast-response organic photoelectric detector with a cascade structure; the names of the parts are: ITO conductive glass 1, ZnO cathode buffer layer 2, PTB7-Th, ITIC bottom active layer 3, MoO 3 the/Ag/PEIE internal composite region 4, PTB7-Th, FOIC top active layer 5, MoO 3 An anode buffer layer 6 and an Ag anode 7; the inner recombination zone 4 consists of MoO 3 An electron blocking layer 41, an Ag metal layer 42, and a PEIE hole blocking layer 43.
FIG. 2: absorption spectra of the active layer materials in examples 1-3. The spectrum range of the ITIC serving as a typical non-fullerene electron acceptor material is 300-800 nm, a visible peak is arranged at 705nm, the FOIC has strong light-capturing capacity in a near-infrared region, and a near-infrared peak is arranged at 820 nm. In addition, PTB7-Th showed stronger visible absorption over the 300nm to 700nm spectrum. Because of the greater penetration depth of longer wavelength light in the photoactive layer, the bottom active layer was chosen to be PTB7-Th: ITIC, which absorbs primarily visible light, and the top active layer was chosen to be PTB7-Th: FOIC, which absorbs near infrared light. Thanks to the complementary absorption spectrum, the organic photoelectric detector based on the cascade structure has wide absorption in the area of 300-1000nm, and the theoretical feasibility of realizing ultraviolet-visible-near infrared broadband detection of the cascade device is ensured.
FIG. 3: example 3 an equivalent circuit diagram of a broadband, low noise, ultrafast response, cascade structured organic photodetector was prepared. As shown in the figure, the whole cascade organic photodetector is equivalent to the cascade of two independent devices, when monochromatic light enters from the ITO side, one of the visible light part and the near infrared light part effectively absorbs the monochromatic light of the wave band to generate carriers, and the characteristic of a p-i-n junction is shown. And the other one of the two can not generate a carrier because of no corresponding light absorption, and is equivalent to a flat capacitor in a circuit, and the carrier does not need to pass through an interface and is collected by a corresponding electrode, so that the interface capture effect is greatly reduced, and the ultra-fast response of the cascade device is realized.
FIG. 4: working principle diagram of the cascade structure organic photodetector prepared in example 3 under the illumination condition. Under the full-color light irradiation condition, the bottom and top active layers absorb visible light and near-infrared light, respectively, and generate electrons and holes, wherein in the bottom active layer, the electrons are concentrated on the ITO side, and the holes are concentrated on the internal recombination region side. In the top active layer, holes are concentrated near the top electrode and electrons are concentrated on the side of the internal recombination zone. At this time, MoO 3 the/Ag/PEIE internal recombination region is used as a recombination center in the photoelectric detector, and electrons and holes which are equal to each other on two sides of the internal recombination region meet and recombine in the internal recombination region.
FIG. 5: working principle diagram of the cascade structure organic photodetector prepared in example 3 under dark condition. Under dark conditions, the dark current of the device is mainly from the charge due to the action of the applied biasAnd (4) performing reverse injection. As shown, the single-segment device electron injection barrier
Hole injection barrier expressed as the difference between the LUMO level of the acceptor material and the Ag electrode work function
Expressed as the difference between the HOMO level of the donor material and the ITO work function. And for the device with the cascade structure, the P-type material MoO in the inner recombination region 3 And the N-type material PEIE can effectively block electrons from the top layer and holes from the bottom layer respectively, so that a higher electron injection barrier is formed
And hole injection barrier
The dark current is reduced. From the figure, the organic photoelectric detector based on the cascade structure can clearly compare, and the performance of the photoelectric detector can be effectively improved.
FIG. 6: single-segment organic photodetectors based on PTB7-Th: ITIC and PTB7-Th: FOIC active layers prepared in examples 1-2 and cascade-structured organic photodetectors prepared in example 3 at 100mw cm -2 The J-V characteristic curve is measured under the standard AM1.5G sunlight, and the open-circuit voltage (V) of the three devices is noted oc ). V of the Cascade Structure organic photodetector, as shown in the figure oc 1.488V, V close to that of two single-section organic photodetectors oc Sum (V of single-section organic photoelectric detector oc 0.738V and 0.814V, respectively), indicating that the organic photodetector of the tandem structure formed by the internal recombination zone can operate properly.
FIG. 7: dark current contrast plots for single-segment organic photodetectors based on PTB7-Th: ITIC and PTB7-Th: FOIC active layers prepared in examples 1-2 and cascade-structured organic photodetectors prepared in example 3 in the range of-0.5V to 1.5V. As shown in the figure, the cascade structure at-0.1V isThe dark current density of the organic photoelectric detector is 1.94 multiplied by 10 -9 A cm -2 The dark current density is lower than that of a single-section photoelectric detector by more than 1 order of magnitude, which shows that the cascade structure organic photoelectric detector can realize lower noise current and higher sensitivity. From the figure, the organic photoelectric detector based on the cascade structure can clearly compare, and the performance of the photoelectric detector can be effectively improved.
FIG. 8: a comparison of EQE curves of single-segment organic photodetectors based on PTB7-Th ITIC and PTB7-Th FOIC active layers prepared in examples 1-2 and cascade-structured organic photodetectors prepared in example 3 measured at zero bias. As shown in the figure, the organic photoelectric detector with the cascade structure realizes wide-range detection in the range of 300-1000nm, compared with a single-section photoelectric detector, the EQE value in the range of 380-450nm is improved, the highest EQE value obtained by the cascade structure photoelectric detector at 800nm is 54.69%, and the carrier generated in the near infrared region can be fully collected by the electrode, so that the organic photoelectric detector based on the cascade structure and prepared by the invention can effectively cover the wide-band detection of 300-1000 nm.
FIG. 9: the single-section organic photoelectric detector based on the PTB7-Th ITIC and the PTB7-Th FOIC active layer prepared in the examples 1-2 and the cascade structure organic photoelectric detector prepared in the example 3 have responsivity curves at different wavelengths. The calculation shows that the responsivity of the organic photoelectric detector with the cascade structure in the near infrared region of 840nm reaches 0.36AW -1 。
FIG. 10: the single-segment organic photodetectors based on the PTB7-Th ITIC and PTB7-Th FOIC active layer prepared in examples 1-2 and the cascade-structured organic photodetectors prepared in example 3 have detection sensitivity curves of different wavelengths under a bias of-0.1V. The detection rate of the cascade structure organic photoelectric detector is more than 2.5 multiplied by 10 at the position of 350-900 nm 11 Jones(cm Hz -1/ 2 W -1 ) The peak value at 840nm of the near infrared region is 9.73 multiplied by 10 11 Jones, in general. The maximum detectivity of visible light device at 585nm is 1.28 × 10 11 Jones, near infrared device, has a maximum detectivity of 2.04X 10 at 805nm 11 Jones. Compared with a single-section organic photoelectric detector, the cascade device is arranged inThe detectivity under different wavelengths is obviously improved, and the detectivity in the near infrared region is improved by 3 times. The cascade device shows wider light detection range and provides more opportunities for practical application. From the figure, the organic photoelectric detector based on the cascade structure can clearly compare, and the performance of the photoelectric detector can be effectively improved.
FIG. 11: noise current contrast plots for single-segment organic photodetectors based on PTB7-Th: ITIC and PTB7-Th: FOIC active layers prepared in examples 1-2 and cascade-structured organic photodetectors prepared in example 3. It can be seen from the figure that the noise current of the cascade-structured organic photodetector is lower than that of the single-section organic photodetector by more than 2 orders of magnitude, and the noise current is almost independent of the frequency, which indicates that the cascade-structured organic photodetector has higher detection sensitivity. From the figure, the organic photoelectric detector based on the cascade structure can clearly compare, and the performance of the photoelectric detector can be effectively improved.
FIG. 12: transient photocurrent curves of single-segment organic photodetectors based on PTB7-Th ITIC and PTB7-Th FOIC active layers prepared in examples 1-2 and cascade-structured organic photodetectors prepared in example 3 are compared. Under the excitation of 355nm pulse laser, the response time of the visible light device, the near infrared device and the cascade device is 387.74ns, 454.91ns and 146.80ns respectively, and the response speed of the cascade device is greatly improved. From the figure, the organic photoelectric detector based on the cascade structure can clearly compare, and the performance of the photoelectric detector can be effectively improved.
Detailed Description
Example 1:
1) performing ultrasonic treatment on the ITO conductive glass for 20min by using isopropanol, acetone, ethanol and deionized water in sequence, introducing nitrogen, drying for 30min, and treating for 10min by using an ultraviolet ozone system for later use;
2) dissolving 30g of zinc acetate in 290 mu L of dimethoxy ethanol solution, adding 10 mu L of ethanolamine to prepare 100mg/mL ZnO solution, stirring at 25 ℃ for 8 hours, and then spin-coating on cathode ITO conductive glass at the spin-coating speed of 3000rpm for 30s to obtain a cathode buffer layer with the thickness of 40nm for later use;
3) mixing a donor material PTB7-Th and an acceptor material ITIC in a mass ratio of 1:1.2, dissolving the mixture in a Chlorobenzene (CB) solution, stirring the mixture for 10 hours at 25 ℃ with a total concentration of 20mg/mL, spin-coating the mixture on a cathode buffer layer ZnO at a spin-coating speed of 1000rpm for 60s to obtain an active layer with a thickness of 110 nm;
4) the sample was removed and transferred to a vapor deposition system at 5X 10 -5 A layer of MoO grows on the active layer under pa pressure by a thermal evaporation method 3 A material; MoO with a thickness of 5nm was obtained 3 An anode buffer layer;
5) at 5X 10 -5 And under the condition of Pa, growing a layer of Ag material on the anode buffer layer to be used as a top electrode, wherein the thickness of the Ag material is 70nm, and obtaining an Ag anode, thereby preparing the single-section organic photoelectric detector used as a contrast device visible light device.
Example 2:
1)1, ultrasonically treating the ITO conductive glass for 20min by using isopropanol, acetone, ethanol and deionized water in sequence, then introducing nitrogen to dry for 30min, and then treating for 10min by using an ultraviolet ozone system for later use;
2) dissolving 30g of zinc acetate in 290 mu L of dimethoxy ethanol solution, adding 10 mu L of ethanolamine to prepare 100mg/mL ZnO solution, stirring at 25 ℃ for 8 hours, and then spin-coating on cathode ITO conductive glass at the spin-coating speed of 3000rpm for 30s to obtain a cathode buffer layer with the thickness of 40nm for later use;
3) mixing a donor material PTB7-Th and an acceptor material FOIC in a mass ratio of 1:1.5, dissolving the mixture in a Chloroform (CF) solution, stirring the mixture for 2 hours at 25 ℃ with a total concentration of 6.25mg/mL, spin-coating the mixture on a cathode buffer layer ZnO at a spin-coating speed of 1500rpm for 60s to obtain an active layer with a thickness of 90 nm;
4) the sample was removed and transferred to a vapor deposition system at 5X 10 -5 A layer of MoO grows on the active layer under pa pressure by a thermal evaporation method 3 Material to obtain MoO with thickness of 5nm 3 An anode buffer layer;
5) at 5X 10 -5 And under the condition of Pa, growing a layer of Ag material on the anode buffer layer to be used as a top electrode, wherein the thickness of the Ag material is 70nm, and obtaining an Ag anode, thereby preparing the single-section organic photoelectric detector used as a near-infrared device of a contrast device.
Example 3:
1) performing ultrasonic treatment on the ITO conductive glass for 20min by using isopropanol, acetone, ethanol and deionized water in sequence, introducing nitrogen, drying for 30min, and treating for 10min by using an ultraviolet ozone system for later use;
2) dissolving 30g of zinc acetate in 290 mu L of dimethoxy ethanol solution, adding 10 mu L of ethanolamine to prepare 100mg/mL ZnO solution, stirring at 25 ℃ for 8 hours, and then spin-coating on cathode ITO conductive glass at the spin-coating speed of 3000rpm for 30s to obtain a cathode buffer layer with the thickness of 40nm for later use;
3) mixing a donor material PTB7-Th and an acceptor material ITIC in a mass ratio of 1:1.2, dissolving the mixture in a Chlorobenzene (CB) solution, stirring the mixture for 10 hours at 25 ℃ with a total concentration of 20mg/mL, spin-coating the mixture on a cathode buffer layer ZnO at a spin-coating speed of 1000rpm for 60s to obtain a bottom active layer with a thickness of 110 nm;
4) the sample was removed and transferred to a vapor deposition system at 5X 10 -5 A layer of MoO grows on the bottom active layer under pa pressure by means of thermal evaporation 3 The thickness is 8 nm; then in MoO 3 Evaporating a layer of Ag with the thickness of 10 nm; subsequently, a 37 wt% PEIE aqueous solution was dissolved in a dimethoxyethanol solution at a concentration of 0.2 v%, and PEIE was spin-coated on the ultra-thin Ag layer using a spin coating method at a spin speed of 5000rpm for a spin coating time of 30s to obtain a PEIE layer having a thickness of 12nm, thereby forming MoO 3 an/Ag/PEIE internal recombination zone;
5) mixing a donor material PTB7-Th and an acceptor material FOIC in a mass ratio of 1:1.5, dissolving the mixture in a Chloroform (CF) solution, wherein the total concentration of the donor material and the acceptor material is 6.25mg/mL, stirring the mixture for 1h at 25 ℃, and then spin-coating the mixture on an internal composite region at a spin-coating speed of 1500rpm for 60s to obtain a top active layer with a thickness of 100 nm;
6) taking out the sample and moving the sample to the vapor deposition system againIn 5X 10 -5 Under pa, growing an anode buffer layer MoO on the top active layer by thermal evaporation 3 The thickness is 5 nm;
7) at 5X 10 -5 And under pa, a layer of Ag material is regrown on the anode buffer layer by using a thermal evaporation method to be used as a top electrode, the thickness is 70nm, and an Ag anode is obtained, so that the broadband, low-noise and ultrafast-response cascade-structure organic photoelectric detector is prepared.
Claims (2)
1. A preparation method of an organic photoelectric detector with a cascade structure comprises the following steps:
1) ultrasonically cleaning ITO conductive glass for 15-30 min by using isopropanol, acetone, ethanol and deionized water in sequence, then introducing nitrogen to dry for 20-40 min, and then treating for 10-15 min by using ultraviolet ozone to serve as a cathode (1);
2) dissolving 15-30 g of zinc acetate in 145-290 mu L of dimethoxyethanol solution, adding 5-10 mu L of ethanolamine to prepare a ZnO solution with the concentration of 50-200 mg/mL, stirring at room temperature for 8-12 h, and then spin-coating on a cathode (1) at the spin-coating speed of 3000-4000 rpm for 30-40 s to obtain a ZnO cathode buffer layer (2) with the thickness of 30-40 nm;
3) mixing the components in a mass ratio of 1: 1-1.4 of donor material PTB7-Th and acceptor material ITIC, which are mixed and dissolved in chlorobenzene solution, wherein the total concentration of the donor material and the acceptor material is 15-20 mg/mL, the mixture is uniformly stirred at 20-25 ℃, and then is spin-coated on a ZnO cathode buffer layer (2), the spin-coating speed is 800-1500 rpm, the spin-coating time is 40-60 s, and a bottom active layer (3) with the thickness of 100-120 nm is obtained;
4) at 2X 10 -4 ～6×10 -5 Preparing MoO with the thickness of 8-12 nm on the bottom active layer (3) by a thermal evaporation method under the Pa condition 3 Layer (41) subsequently on MoO 3 An Ag layer (42) with the thickness of 8-12 nm is evaporated on the layer; dissolving a PEIE aqueous solution with the concentration of 37 wt% in a dimethoxyethanol solution with the concentration of 0.1-0.2 v%, and spin-coating the PEIE aqueous solution on the ultrathin Ag layer by using a spin-coating method, wherein the rotating speed is 4000-6000 rpm, and the spin-coating time is 30-40 s, so as to obtain the thick Ag layerA PEIE layer (43) having a degree of 10 to 15nm, thereby forming MoO 3 an/Ag/PEIE internal recombination zone (4);
5) mixing the components in a mass ratio of 1: 1.5-2 of donor material PTB7-Th and acceptor material FOIC which are mixed and dissolved in chloroform solution, wherein the total concentration of the donor material and the acceptor material is 6-10 mg/mL, the mixture is uniformly stirred at the temperature of 20-25 ℃, and then the mixture is spin-coated on an internal composite region (4), the spin-coating speed is 1000-2500 rpm, the spin-coating time is 40-60 s, and a top active layer (5) with the thickness of 80-110 nm is obtained;
6) at 2X 10 -4 ～6×10 -5 Preparing a layer of MoO with the thickness of 3.5-5 nm on the top active layer (5) under the Pa condition 3 Layer, obtaining an anode buffer layer (6);
7) at 2X 10 -4 ～6×10 -5 And under the Pa condition, performing vapor plating on Ag with the thickness of 60-80 nm on the anode buffer layer (6) to obtain an anode (7), thereby preparing the cascade-structure organic photoelectric detector.
2. An organic photodetector having a cascade structure, characterized in that: is prepared by the method of claim 1.
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