CN208173627U - A kind of lamination photodetector based on novel articulamentum - Google Patents
A kind of lamination photodetector based on novel articulamentum Download PDFInfo
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- CN208173627U CN208173627U CN201820121253.8U CN201820121253U CN208173627U CN 208173627 U CN208173627 U CN 208173627U CN 201820121253 U CN201820121253 U CN 201820121253U CN 208173627 U CN208173627 U CN 208173627U
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- articulamentum
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- laminated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model belongs to technical field of photoelectric detection, specially a kind of lamination photodetector based on novel articulamentum, including preceding detector, articulamentum and rear detector, it is characterised in that：Before the articulamentum is laminated on detector, the rear detector layer is laminated on articulamentum, the articulamentum is four-layer structure, including the first articulamentum, second articulamentum, third articulamentum and the 4th articulamentum, second articulamentum are laminated on the first articulamentum, the third articulamentum is laminated on the second articulamentum, and the 4th articulamentum is laminated on third articulamentum.
Description
Technical field
The utility model belongs to technical field of photoelectric detection, specially a kind of lamination photodetection based on novel articulamentum
Device.
Background technique
Optical detector has important application in national economy and military field.Photodetection can be divided into photocurrent detection and
The detection of photovoltage.Organic photoelectric detection has flexible cost low many advantages, such as can be easily made broad area device.Organic photoelectric
Press the research of detector also fewer at present, the photovoltage responsiveness for improving organic photoelectric pressure detector is to promote organic photoelectric pressure
The only way of detector industrialization, but the photovoltage responsiveness of current organic photoelectric pressure detector is not also non-convention
Think, the voltage for laminated device of connecting is the sum of the voltage of sub- device, therefore can use laminated construction and improve organic photoelectric pressure spy
Survey the photovoltage responsiveness of device.But the articulamentum of laminated device has vital influence for the performance of laminated device.
So the lamination photodetector based on novel articulamentum for providing a kind of high voltage responsiveness, which becomes us, to be solved
Certainly the problem of.
Utility model content
It is above-mentioned to solve the purpose of this utility model is to provide a kind of lamination photodetector based on novel articulamentum
The problem of being proposed in background technique.
To achieve the above object, the utility model provides the following technical solutions：
A kind of lamination photodetector based on novel articulamentum, including preceding detector, articulamentum and rear detector, it is special
Sign is：Before the articulamentum is laminated on detector, the rear detector layer is laminated on articulamentum, the company
Connecing layer is four-layer structure, including the first articulamentum, the second articulamentum, third articulamentum and the 4th articulamentum, and described second connects
It connects and is laminated on the first articulamentum layer by layer, the third articulamentum is laminated on the second articulamentum, the 4th connection
It is laminated on third articulamentum layer by layer.
Preferably, first articulamentum is MoO3, the first articulamentum connects with a thickness of 1 nm, described second
Connecing layer is CuPc, the second articulamentum with a thickness of 2 nm, the third articulamentum is C60, third articulamentum with a thickness of 3
Nm, the 4th articulamentum be Ag, the 4th articulamentum with a thickness of 0.25 nm.
Preferably, the preceding detector includes the substrate stacked gradually, first anode decorative layer, the first light absorption
Layer and the first cathodic modification layer, the substrate are ITO electro-conductive glass, and the first anode decorative layer is PEDOT:PSS, institute
The first anode decorative layer stated with a thickness of 36 nm, first light absorbing layer is CH3NH3PbI3, and first light is inhaled
Receive layer with a thickness of 150 nm, first cathodic modification layer is PCBM, first cathodic modification layer be with a thickness of
25 nm。
Preferably, the rear detector includes the second plate decorative layer stacked gradually, the second light absorbing layer,
Two cathodic modification layers and reflecting electrode, the second plate decorative layer are MoO3, the thickness of the first anode decorative layer
For 5 nm, second light absorbing layer is double-layer structure, including the ZnPc and C60 stacked gradually, wherein ZnPc with a thickness of
40 nm, C60 with a thickness of 50 nm, second cathodic modification layer is BCP, the thickness that second cathodic modification layer is
For 7 nm, the reflecting electrode is Al, the reflecting electrode with a thickness of 160 nm.
Compared with prior art, the utility model has the beneficial effects that：The utility model uses laminated construction, has front and back
Double detector enhances absorption of the detector to light, improves the voltage responsive degree of detector.Using the Novel connection of four-layer structure
Layer is connect, is sensitized condition in MoO3, the light induced electron formed in preceding detector since charge dipole acts in CuPc/C60 and rear spy
Survey in device the photohole that is formed can easier connected layer absorbed, and occur in articulamentum it is effectively compound,
The recombination region for having widened articulamentum effectively increases the voltage responsive degree of detector.
Detailed description of the invention
Fig. 1 is the utility model overall structure diagram；
Fig. 2 is to connect schematic diagram of a layer structure in the utility model.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
In the description of the present invention, it should be understood that term " on ", "lower", "front", "rear", "left", "right",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific
Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.
The utility model provides a kind of technical solution referring to FIG. 1-2,：A kind of lamination photoelectricity spy based on novel articulamentum
Device, including preceding detector, articulamentum and rear detector are surveyed, before the articulamentum is laminated on detector, the rear spy
It surveys device to be laminated on articulamentum, the articulamentum is four-layer structure, including the first articulamentum, the second articulamentum, third company
Layer and the 4th articulamentum are connect, second articulamentum is laminated on the first articulamentum, and the third articulamentum is laminated in
On second articulamentum, the 4th articulamentum is laminated on third articulamentum；First articulamentum is MoO3, the
One articulamentum with a thickness of 1 nm, second articulamentum is CuPc, the second articulamentum with a thickness of 2 nm, the third
Articulamentum is C60, third articulamentum with a thickness of 3 nm, the 4th articulamentum is Ag, the 4th articulamentum with a thickness of
0.25 nm；The preceding detector includes the substrate stacked gradually, first anode decorative layer, the first light absorbing layer and the first yin
Pole decorative layer, the substrate are ITO electro-conductive glass, and the first anode decorative layer is PEDOT:PSS, first sun
Pole decorative layer with a thickness of 36 nm, first light absorbing layer is CH3NH3PbI3, the thickness of first light absorbing layer
For 150 nm, first cathodic modification layer is PCBM, first cathodic modification layer be with a thickness of 25 nm；It is described
Rear detector include the second plate decorative layer stacked gradually, the second light absorbing layer, the second cathodic modification layer and reflecting electrode,
The second plate decorative layer be MoO3, the first anode decorative layer with a thickness of 5 nm, second light absorption
Layer is double-layer structure, including the ZnPc and C60 stacked gradually, wherein ZnPc with a thickness of 40 nm, C60 with a thickness of 50 nm,
Second cathodic modification layer be BCP, second cathodic modification layer be with a thickness of 7 nm, the reflecting electrode is
Al, the reflecting electrode with a thickness of 160 nm.
Working principle：Detect light can before the substrate side of detector inject inside detector, reach preceding detector and rear visit
Device is surveyed, is absorbed by the second light absorbing layer of the first light absorbing layer of preceding detector and rear detector, in the first light of preceding detector
Light-generated excitons are formed in second light absorbing layer of absorbed layer and rear detector, light-generated excitons are in interface energy level difference or built in field
Left and right under, dissociate, form electrons and holes, wherein before the basad movement in hole in detector, in preceding detector
Electronics is moved to articulamentum, and the hole in rear detector is moved to articulamentum, and the electronics in rear detector is moved to reflecting electrode,
The hole in electronics and rear detector in preceding detector occurs compound in articulamentum, reaches balance, bases hole with
Photo-induced voltage, that is, the detecting voltage measured are generated at the electronics of reflecting electrode.For stacked detectors, photoproduction electricity
Pressure is the sum of the photovoltage generated in detector after preceding detector neutralizes.In the utility model, due to using novel company
Layer is connect, the pressure drop in articulamentum is effectively prevented, improves the photovoltage responsiveness of device.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (1)
1. a kind of lamination photodetector based on novel articulamentum, including preceding detector, articulamentum and rear detector, feature
It is：Before the articulamentum is laminated on detector, the rear detector layer is laminated on articulamentum, the connection
Layer is four-layer structure, including the first articulamentum, the second articulamentum, third articulamentum and the 4th articulamentum, second connection
It is laminated on the first articulamentum layer by layer, the third articulamentum is laminated on the second articulamentum, the 4th articulamentum
It is laminated on third articulamentum；First articulamentum is MoO3, the first articulamentum with a thickness of 1 nm, described second
Articulamentum is CuPc, the second articulamentum with a thickness of 2 nm, the third articulamentum is C60, third articulamentum with a thickness of 3
Nm, the 4th articulamentum be Ag, the 4th articulamentum with a thickness of 0.25 nm；The preceding detector includes stacking gradually
Substrate, first anode decorative layer, the first light absorbing layer and the first cathodic modification layer, the substrate be ITO electro-conductive glass, institute
The first anode decorative layer stated is PEDOT:PSS, the first anode decorative layer with a thickness of 36 nm, first light
Absorbed layer is CH3NH3PbI3, first light absorbing layer with a thickness of 150 nm, first cathodic modification layer is
PCBM, first cathodic modification layer be with a thickness of 25 nm；The rear detector includes the second plate stacked gradually
Decorative layer, the second light absorbing layer, the second cathodic modification layer and reflecting electrode, the second plate decorative layer is MoO3, described
First anode decorative layer with a thickness of 5 nm, second light absorbing layer is double-layer structure, including the ZnPc stacked gradually
And C60, wherein ZnPc with a thickness of 40 nm, C60 with a thickness of 50 nm, second cathodic modification layer is BCP, described
Second cathodic modification layer be with a thickness of 7 nm, the reflecting electrode is Al, the reflecting electrode with a thickness of 160 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820121253.8U CN208173627U (en) | 2018-01-24 | 2018-01-24 | A kind of lamination photodetector based on novel articulamentum |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820121253.8U CN208173627U (en) | 2018-01-24 | 2018-01-24 | A kind of lamination photodetector based on novel articulamentum |
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|---|---|
| CN208173627U true CN208173627U (en) | 2018-11-30 |
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| CN201820121253.8U Expired - Fee Related CN208173627U (en) | 2018-01-24 | 2018-01-24 | A kind of lamination photodetector based on novel articulamentum |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740018A (en) * | 2020-07-07 | 2020-10-02 | 吉林大学 | Broadband, low-noise and ultrafast-response organic photoelectric detector with cascade structure and preparation method thereof |
| CN112185992A (en) * | 2020-10-12 | 2021-01-05 | 运城学院 | Parallel laminated full-waveband photoelectric detector and preparation method thereof |
-
2018
- 2018-01-24 CN CN201820121253.8U patent/CN208173627U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740018A (en) * | 2020-07-07 | 2020-10-02 | 吉林大学 | Broadband, low-noise and ultrafast-response organic photoelectric detector with cascade structure and preparation method thereof |
| CN111740018B (en) * | 2020-07-07 | 2022-08-09 | 吉林大学 | Cascade structure organic photoelectric detector and preparation method thereof |
| CN112185992A (en) * | 2020-10-12 | 2021-01-05 | 运城学院 | Parallel laminated full-waveband photoelectric detector and preparation method thereof |
| CN112185992B (en) * | 2020-10-12 | 2024-02-02 | 运城学院 | Parallel laminated full-wave band photoelectric detector and preparation method thereof |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181130 Termination date: 20210124 |