CN208078030U - A kind of organic photoelectric multiplication detector - Google Patents
A kind of organic photoelectric multiplication detector Download PDFInfo
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- CN208078030U CN208078030U CN201820128920.5U CN201820128920U CN208078030U CN 208078030 U CN208078030 U CN 208078030U CN 201820128920 U CN201820128920 U CN 201820128920U CN 208078030 U CN208078030 U CN 208078030U
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- Prior art keywords
- layer
- photomultiplier transit
- transit layer
- thickness
- organic photoelectric
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- 239000000758 substrate Substances 0.000 claims abstract description 12
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 10
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims abstract description 4
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 6
- 230000005622 photoelectricity Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model belongs to technical field of photoelectric detection, specially a kind of organic photoelectric multiplication detector, including substrate (1), it is characterised in that：It is provided with photomultiplier transit layer in the substrate (1)（2）, the photomultiplier transit layer（2）For two-layer composite, including the first photomultiplier transit layer（201）With the second photomultiplier transit layer（202）, the first photomultiplier transit layer（201）For TPBI, the first photomultiplier transit layer（201）Thickness is 2-5 nm, the second photomultiplier transit layer（202）It is arranged in the first photomultiplier transit layer（201）On, the second photomultiplier transit layer（202）For MoO3, the second photomultiplier transit layer（202）Thickness be 5 nm, the photomultiplier transit layer（2）Upper setting light absorbing layer（3）, the light absorbing layer（3）On be provided with cathode buffer layer（4）, the cathode buffer layer（4）Upper setting reflection electrode layer（5）.
Description
Technical field
The utility model belongs to technical field of photoelectric detection, specially a kind of organic photoelectric multiplication detector.
Background technology
Organic semiconducting materials due to its extinction coefficient it is high, it is at low cost, green, can be made into large area flexible device and receive
The concern of people.With the continuous development of organic semiconducting materials, there has also been big for the opto-electronic device performance based on organic material
Amplitude improves, and the research of organic photodetector also receives the concern of people.The main base of the organic photodetector of document report at present
In organic photovoltaic effect.Organic material captures solar photon and generates exciton, exciton diffusion to the interface to acceptor material, solution
From at free carrier, carrier is collected by electrode, to generate photogenerated current, realizes detection and response to light.Due to by
Outer quantum to material extinction coefficient, the influence of exciton fission efficiency, carrier transport and collection efficiency, this kind of optical detector is imitated
Rate is both less than 100%, and for dim light or superweak optical detection, the responsiveness of device is just restricted.
So provide that a kind of organic photoelectric multiplication detector of external quantum efficiency more than 100% becomes that we to be solved asks
Topic.
Utility model content
The purpose of this utility model is to provide a kind of organic photoelectric multiplication detectors, to solve to carry in above-mentioned background technology
The problem of going out.
To achieve the above object, the utility model provides the following technical solutions：
A kind of organic photoelectric multiplication detector, including substrate, it is characterised in that：Photoelectricity times is provided in the substrate
Increasing layer, the photomultiplier transit layer are two-layer composite, including the first photomultiplier transit layer and the second photomultiplier transit layer are described
First photomultiplier transit layer is TPBI, and the first photomultiplier transit layer thickness is 2-5 nm, and second photomultiplier transit layer setting is the
On one photomultiplier transit layer, the second photomultiplier transit layer is MoO3, and the thickness of the second photomultiplier transit layer is 5 nm, the photoelectricity times
Light absorbing layer is set in increasing layer, cathode buffer layer is provided on the light absorbing layer, setting is anti-on the cathode buffer layer
Penetrate electrode layer.
Preferably, the substrate is ITO electro-conductive glass, the average visible photopic light transmitance of ITO electro-conductive glass is more than
90%。
Preferably, the light absorbing layer is double-layer structure, including the rubrene layers stacked gradually and C60 layers,
The thickness that middle rubrene layers of thickness is nm, C60 layers of 20-40 is 35-65 nm.
Preferably, the cathode buffer layer is Bphen, the thickness of cathode buffer layer is 5-10 nm.
Preferably, the reflection electrode layer is Al, the thickness of reflection electrode layer is 60-200 nm.
Compared with prior art, the utility model has the beneficial effects that：The utility model is using the double-deck photomultiplier transit layer knot
Structure, wherein the first photomultiplier transit layer is for stopping the photohole formed in light absorbing layer, the second photomultiplier transit layer is for improving
Device built in field promotes the photohole formed in light absorbing layer to movement at the first photomultiplier transit layer, so that photoproduction
Hole is largely accumulated in the first photomultiplier transit layer, is largely accumulated in the first photomultiplier transit layer by photohole and is promoted electronics
From ito anode to the injection of device inside, to realize that photomultiplier transit, the utility model can substantially increase the sound of detector
Response so that the external quantum efficiency of detector is far more than 100%.
Description of the drawings
Fig. 1 is the utility model overall structure diagram；
Fig. 2 is photomultiplier transit schematic diagram of a layer structure in the utility model；
In figure：1- substrates, 2- photomultiplier transit layers, 3- light absorbing layers, 4- cathode buffer layers, 5- reflection electrode layers, 201-
One photomultiplier transit layer, 202- the second photomultiplier transit layers.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be understood that term "upper", "lower", "front", "rear", "left", "right",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
The utility model and simplifying describes for ease of description, do not indicate or imply the indicated device or element must have it is specific
Orientation, with specific azimuth configuration and operation, therefore should not be understood as limiting the present invention.
- 2 are please referred to Fig.1, the utility model provides a kind of technical solution：A kind of organic photoelectric multiplication detector, including base
Bottom 1, the substrate 1 are ITO electro-conductive glass, and the average visible photopic light transmitance of ITO electro-conductive glass is more than 90%, the substrate 1
On be provided with photomultiplier transit layer 2, photomultiplier transit layer 2 is two-layer composite, including the first photomultiplier transit layer 201 and the second photoelectricity
Dynode layer 202, the first photomultiplier transit layer 201 are TPBI, and 201 thickness of the first photomultiplier transit layer is 2-5 nm, described
Second photomultiplier transit layer 202 is arranged on the first photomultiplier transit layer 201, and the second photomultiplier transit layer 202 is MoO3, the second photoelectricity
The thickness of dynode layer 202 is 5 nm, and light absorbing layer 3 is arranged on the photomultiplier transit layer 2, and the light absorbing layer 3 is bilayer
Structure, including the rubrene layers stacked gradually and C60 layers, wherein rubrene layers of thickness are the thickness of nm, C60 layers of 20-40
For 35-65 nm；Cathode buffer layer 4 is provided on the light absorbing layer 3, the cathode buffer layer 4 is Bphen, and cathode is slow
The thickness for rushing layer 4 is 5-10 nm, and reflection electrode layer 5 is arranged on the cathode buffer layer 4；The reflection electrode layer 5 is
The thickness of Al, reflection electrode layer 5 are 60-200 nm.
Operation principle：Under reverse bias voltage condition, detection light from 1 side of substrate inject detector inside, reach rubrene and
C60 light absorbing layers 3 are absorbed by rubrene and C60, light-generated excitons are formed in rubrene and C60, light-generated excitons are in concentration ladder
The interfaces rubrene and C60 are diffused under the action of degree difference, under the left and right of interface energy level difference, light-generated excitons dissociate, shape
At electrons and holes, electrons and holes are under the action of device built in field or extra electric field, respectively to cathode and anode side
Promote the photohole formed in light absorbing layer since MoO3 the second photomultiplier transit layers improve device built in field to movement
Accelerate to move at TPBI the first photomultiplier transit layers, since the HOMO energy levels of TPBI the first photomultiplier transit layers are far above rubrene,
Hole is difficult to cross TPBI the first photomultiplier transit layers, so that photohole largely accumulates at TPBI the first photomultiplier transit layers
Tired, under reverse bias voltage condition, in the first photomultiplier transit layer, largely accumulation will promote electronics from ito anode to device to photohole
A large amount of injections inside part, to realize photomultiplier transit.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is appreciated that can these embodiments be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (5)
- The detector 1. a kind of organic photoelectric doubles, including substrate (1), it is characterised in that：It is provided with photoelectricity in the substrate (1) Dynode layer（2）, the photomultiplier transit layer（2）For two-layer composite, including the first photomultiplier transit layer（201）With the second photoelectricity Dynode layer（202）, the first photomultiplier transit layer（201）For TPBI, the first photomultiplier transit layer（201）Thickness is 2-5 nm, The second photomultiplier transit layer（202）It is arranged in the first photomultiplier transit layer（201）On, the second photomultiplier transit layer（202）For MoO3, the second photomultiplier transit layer（202）Thickness be 5 nm, the photomultiplier transit layer（2）Upper setting light absorbing layer（3）, institute The light absorbing layer stated（3）On be provided with cathode buffer layer（4）, the cathode buffer layer（4）Upper setting reflection electrode layer（5）.
- The detector 2. a kind of organic photoelectric according to claim 1 doubles, it is characterised in that：The substrate (1) is ITO The average visible photopic light transmitance of electro-conductive glass, ITO electro-conductive glass is more than 90%.
- The detector 3. a kind of organic photoelectric according to claim 1 doubles, it is characterised in that：The light absorbing layer（3） For double-layer structure, including the rubrene layers stacked gradually and C60 layers, wherein rubrene layers of thickness is 20-40 nm, C60 layer Thickness be 35-65 nm.
- The detector 4. a kind of organic photoelectric according to claim 1 doubles, it is characterised in that：The cathode buffer layer （4）For Bphen, cathode buffer layer（4）Thickness be 5-10 nm.
- The detector 5. a kind of organic photoelectric according to claim 1 doubles, it is characterised in that：The reflection electrode layer （5）For Al, reflection electrode layer（5）Thickness be 60-200 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820128920.5U CN208078030U (en) | 2018-01-25 | 2018-01-25 | A kind of organic photoelectric multiplication detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820128920.5U CN208078030U (en) | 2018-01-25 | 2018-01-25 | A kind of organic photoelectric multiplication detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208078030U true CN208078030U (en) | 2018-11-09 |
Family
ID=64035902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820128920.5U Expired - Fee Related CN208078030U (en) | 2018-01-25 | 2018-01-25 | A kind of organic photoelectric multiplication detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208078030U (en) |
-
2018
- 2018-01-25 CN CN201820128920.5U patent/CN208078030U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181109 |
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| CF01 | Termination of patent right due to non-payment of annual fee |