CN208142228U - A kind of photodetector convenient for heat dissipation - Google Patents

A kind of photodetector convenient for heat dissipation Download PDF

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Publication number
CN208142228U
CN208142228U CN201820103930.3U CN201820103930U CN208142228U CN 208142228 U CN208142228 U CN 208142228U CN 201820103930 U CN201820103930 U CN 201820103930U CN 208142228 U CN208142228 U CN 208142228U
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China
Prior art keywords
layer
heat
cathode
conducting layer
conducting
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Expired - Fee Related
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CN201820103930.3U
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Chinese (zh)
Inventor
晋佳佳
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Changtai Huasheng Photoelectric Technology Co Ltd
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Changtai Huasheng Photoelectric Technology Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

The utility model belongs to technical field of photoelectric detection, specially a kind of photodetector convenient for heat dissipation, including substrate, it is characterised in that:Heat-conducting layer is provided in substrate, the heat-conducting layer is two-layer composite, including the first heat-conducting layer and the second heat-conducting layer, first heat-conducting layer is graphene, first heat-conducting layer is with a thickness of 50 nm, second heat-conducting layer is arranged on the first heat-conducting layer, second heat-conducting layer is aluminium foil, second heat-conducting layer with a thickness of 500 nm, the r.m.s. roughness of the thermally conductive layer surface of described second is less than 3 nm, second heat-conducting layer is used as the reflection anode of photodetector simultaneously, anode modification layer is provided on second heat-conducting layer, photosensitive layer is provided in the anode modification layer, cathodic modification layer is provided on the photosensitive layer, transparent cathode is provided in the cathodic modification layer, the transparent cathode is two-layer composite, including the first cathode layer and the second cathode layer stacked gradually.

Description

A kind of photodetector convenient for heat dissipation
Technical field
The utility model belongs to technical field of photoelectric detection, specially a kind of photodetector convenient for heat dissipation.
Background technique
Perovskite photodetector uses hybrid perovskite material ABX3 as photoactive layer, and traditional Si-based photodetectors battery is compared, it has again, and low in cost, the absorption coefficient of light is high, carrier diffusion length is big, quality is light, The advantages that flexibility is good.With deepening continuously for domestic and international correlative study in recent years, perovskite photodetector battery is main Using two kinds of structures of meso-hole structure and planar heterojunction, the detectivity and stability of perovskite photodetector are constantly promoted.
Traditional perovskite photodetector is produced on ITO or FTO, and heat dissipation performance is poor, is unfavorable for device The raising in service life.
It to be solved the problems, such as so providing a kind of photodetector convenient for heat dissipation and becoming us.
Utility model content
The purpose of this utility model is to provide a kind of photodetectors convenient for heat dissipation, to solve in above-mentioned background technique The problem of proposition.
To achieve the above object, the utility model provides the following technical solutions:
A kind of photodetector convenient for heat dissipation, including substrate, it is characterised in that:Heat-conducting layer is provided in substrate, it is described Heat-conducting layer be two-layer composite, including the first heat-conducting layer and the second heat-conducting layer, first heat-conducting layer is graphene, the One heat-conducting layer is arranged on the first heat-conducting layer with a thickness of 50 nm, second heat-conducting layer, and the second heat-conducting layer is aluminium foil, the Two heat-conducting layers with a thickness of 500 nm, the r.m.s. roughness of the thermally conductive layer surface of described second is less than 3 nm, the second heat-conducting layer Reflection anode as photodetector simultaneously is provided with anode modification layer on second heat-conducting layer, and the anode is repaired It is provided with photosensitive layer on decorations layer, cathodic modification layer is provided on the photosensitive layer, is provided in the cathodic modification layer Bright cathode layer, the transparent cathode is two-layer composite, including the first cathode layer and the second cathode layer stacked gradually, First cathode layer be Mg, the first cathode layer with a thickness of 2 nm, second cathode layer is set to the first cathode layer On, the second cathode layer is Ag, and the second cathode electrode layer thickness is 9 nm, is provided with light coupling layer on the transparent cathode.
Preferably, the substrate is glass or quartz.
Preferably, the anode modification layer is PEDOT:PSS, anode modification layer with a thickness of 36 nm.
Preferably, the photosensitive layer be CH3NH3PbI3, photosensitive layer with a thickness of 500 nm.
Preferably, the cathodic modification layer is double-layer structure, including 20 nm of a layer thickness that stacks gradually The LiF that PCBM and a layer thickness are 0.5 nm.
Preferably, the light coupling layer be ZnSe, light coupling layer with a thickness of 50 nm.
Compared with prior art, the utility model has the beneficial effects that:The utility model uses graphene and aluminium foil conduct The double-deck heat-conducting layer substantially increases the heat sinking function of detector.Pass through the design of transparent cathode and light coupling layer, incident ray When entering to inject inside detector from transparent cathode side, it can more enter inside detector, improve the sound of detector Response.
Detailed description of the invention
Fig. 1 is the utility model overall structure diagram;
Fig. 2 is heat-conducting layer schematic diagram in the utility model;
Fig. 3 is transparent cathode schematic diagram of a layer structure in the utility model.
In figure:1- substrate, 2- heat-conducting layer, 3- anode modification layer, 4- photosensitive layer, 5- cathodic modification layer, 6- transparent cathode, 7- Light coupling layer, the first heat-conducting layer of 201-, the second heat-conducting layer of 202-, the first cathode layer of 601-, the second cathode layer of 602-.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.
In the description of the present invention, it should be understood that term " on ", "lower", "front", "rear", "left", "right", The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.
Fig. 1-3 is please referred to, the utility model provides a kind of technical solution:A kind of photodetector convenient for heat dissipation, including Substrate 1, is provided with heat-conducting layer 2 in substrate 1, and heat-conducting layer 2 is two-layer composite, including the first heat-conducting layer 201 and second is thermally conductive Layer 202, first heat-conducting layer 201 are graphene, and the first heat-conducting layer 201 is with a thickness of 50 nm, the setting of the second heat-conducting layer 202 On the first heat-conducting layer 201, the second heat-conducting layer 202 be aluminium foil, the second heat-conducting layer 202 it is thermally conductive with a thickness of 500 nm, second The r.m.s. roughness on 202 surface of layer is less than 3 nm, the second heat-conducting layer 202 reflection anode as photodetector simultaneously, the It is provided with anode modification layer 3 on two heat-conducting layers 202, photosensitive layer 4 is provided in anode modification layer 3, is provided with cathode on photosensitive layer 4 Decorative layer 5 is provided with transparent cathode 6 in cathodic modification layer 5, and transparent cathode 6 is two-layer composite, including is stacked gradually The first cathode layer 601 and the second cathode layer 602, the first cathode layer 601 is Mg, the first cathode layer 601 with a thickness of 2 nm, the Two cathode layers 602 are set on the first cathode layer 601, and the second cathode layer 602 is Ag, the second cathode layer 602 with a thickness of 9 nm, Light coupling layer 7 is provided on transparent cathode 6;Further, substrate 1 is glass or quartz;Further, anode modification Layer 3 is PEDOT:PSS, anode modification layer 3 with a thickness of 36 nm;Further, photosensitive layer 4 is CH3NH3PbI3, photosensitive layer 4 With a thickness of 500 nm;Further, cathodic modification layer 5 is double-layer structure, including 20 nm of a layer thickness that stacks gradually The LiF that PCBM and a layer thickness are 0.5 nm;Further, light coupling layer 7 be ZnSe, light coupling layer 7 with a thickness of 50 nm.
Working principle:It detects light to inject inside detector from 6 side of transparent cathode, reaches CH3NH3PbI3 photosensitive layer 4, quilt CH3NH3PbI3 photosensitive layer 4 absorbs, and light-generated excitons is formed in CH3NH3PbI3 photosensitive layer 4, light-generated excitons are poor in concentration gradient Under the action of be diffused into 5 interface of CH3NH3PbI3 photosensitive layer 4 and cathodic modification layer, under the left and right of interface energy level difference, photoproduction Exciton dissociates, and forms electrons and holes, and electrons and holes are under the action of device built in field or extra electric field, respectively It is collected to cathode and anode movement, and by cathode and anode, forming optical detection electric current can be obtained by the size of probe current To the intensity of light, to realize detection.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.

Claims (6)

1. a kind of photodetector convenient for heat dissipation, including substrate (1), it is characterised in that:Substrate is provided with heat-conducting layer on (1) (2), the heat-conducting layer(2)For two-layer composite, including the first heat-conducting layer(201)With the second heat-conducting layer(202), described First heat-conducting layer(201)For graphene, the first heat-conducting layer(201)With a thickness of 50 nm, second heat-conducting layer(202)Setting In the first heat-conducting layer(201)On, the second heat-conducting layer(202)For aluminium foil, the second heat-conducting layer(202)With a thickness of 500 nm, institute The second heat-conducting layer stated(202)The r.m.s. roughness on surface is less than 3 nm, the second heat-conducting layer(202)It is used as photodetection simultaneously The reflection anode of device, second heat-conducting layer(202)On be provided with anode modification layer(3), the anode modification layer(3)On It is provided with photosensitive layer(4), the photosensitive layer(4)On be provided with cathodic modification layer(5), the cathodic modification layer(5)On set It is equipped with transparent cathode(6), the transparent cathode(6)For two-layer composite, including the first cathode layer stacked gradually (601)With the second cathode layer(602), first cathode layer(601)For Mg, the first cathode layer(601)With a thickness of 2 nm, Second cathode layer(602)It is set to the first cathode layer(601)On, the second cathode layer(602)For Ag, the second cathode layer (602)With a thickness of 9 nm, the transparent cathode(6)On be provided with light coupling layer(7).
2. a kind of photodetector convenient for heat dissipation according to claim 1, it is characterised in that:The substrate (1) is Glass or quartz.
3. a kind of photodetector convenient for heat dissipation according to claim 1, it is characterised in that:The anode modification layer (3)For PEDOT:PSS, anode modification layer(3)With a thickness of 36 nm.
4. a kind of photodetector convenient for heat dissipation according to claim 1, it is characterised in that:The photosensitive layer(4) For CH3NH3PbI3, photosensitive layer(4)With a thickness of 500 nm.
5. a kind of photodetector convenient for heat dissipation according to claim 1, it is characterised in that:The cathodic modification layer (5)For double-layer structure, the LiF for being 0.5 nm including the PCBM of 20 nm of a layer thickness stacked gradually and a layer thickness.
6. a kind of photodetector convenient for heat dissipation according to claim 1, it is characterised in that:The light coupling layer (7) be ZnSe, light coupling layer (7) with a thickness of 50 nm.
CN201820103930.3U 2018-01-22 2018-01-22 A kind of photodetector convenient for heat dissipation Expired - Fee Related CN208142228U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201820103930.3U CN208142228U (en) 2018-01-22 2018-01-22 A kind of photodetector convenient for heat dissipation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201820103930.3U CN208142228U (en) 2018-01-22 2018-01-22 A kind of photodetector convenient for heat dissipation

Publications (1)

Publication Number Publication Date
CN208142228U true CN208142228U (en) 2018-11-23

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Family Applications (1)

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Country Status (1)

Country Link
CN (1) CN208142228U (en)

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