TWI514563B - Electronic device and manufacturing method of flexible substrate - Google Patents

Description

Electronic device and method for manufacturing flexible substrate

The present invention relates to a method of manufacturing an electronic device and a flexible substrate, and more particularly to an electronic device having a water and oxygen barrier layer and a method of manufacturing the flexible substrate.

Because of its light weight, flexibility, resistance to breakage, and impact resistance, the flexible display device has become one of the products actively researched and developed by major manufacturers. Wherein, the display medium (for example, the organic light-emitting diode) of the flexible display device has high water-oxygen sensitivity, easily reacts with oxygen or moisture to lose its original characteristics, thereby affecting the service life of the display device, and thus After the soft display device is completed, the conventional technology attaches a layer of water and oxygen barrier layer on the outer side of the display device by means of a bonding method to prevent moisture or oxygen from invading and destroying the display device.

In addition, solar energy itself has no pollution problems and is easy to obtain, and it will never be exhausted, so solar energy has become one of the important alternative energy sources. A solar cell that is more commonly used in solar energy is a photoelectric conversion element that converts light energy into electrical energy after being irradiated by sunlight. There are many types of solar cells, such as silicon-based solar cells, compound semiconductor solar cells or organic solar cells, or Dye Sensitized Solar Cells (DSSC). Taking dye-sensitized solar cells as an example, in order to protect solar cells from oxygen or moisture intrusion and affect their service life, conventional techniques still use a bonding method to attach a layer of water and oxygen barrier to the outside of the dye-sensitized solar cell. To prevent the intrusion of moisture or oxygen to destroy the dye-sensitized solar cell.

However, the conventional water-oxygen barrier layer is formed on a substrate by a water-blocking oxygen layer, not only the thickness of the substrate is relatively thick (about 50 to 100 micrometers), but also the materials used for the substrate are mostly intolerant. High temperature and not resistant to acid and alkali, so most of them use low temperature (<120 ° C) coating method to make water and oxygen barrier layer. However, the water-blocking oxygen layer produced by the low-temperature process has a low density of water-blocking oxygen (for example, less than 10 ^-2 g/m ² /day) due to its low density. In addition, moisture and oxygen are infiltrated into the display device from the side of the adhesive material used in the bonding process, and it is also easy to deform the water and oxygen barrier layer to affect the yield due to residual stress. In addition, when the water-oxygen barrier layer is bonded, it is also susceptible to bubbles due to the influence of particles, or the stress of the partial adhesion causes the water-oxygen barrier layer to rupture, resulting in a decrease in the water-blocking oxygen ratio.

Therefore, how to provide an electronic device and a method for manufacturing a flexible substrate has become an important subject not only because of its high water-blocking oxygen resistance, but also because the electronic device has a thin profile and improved transmittance.

In view of the above problems, an object of the present invention is to provide an electronic device and a method of manufacturing a flexible substrate which can improve the transmittance while having not only a high water-blocking oxygen resistance but also a thinning property.

To achieve the above object, an electronic device according to the present invention includes a first flexible substrate having a flexible carrier and a barrier layer. The thickness of the flexible carrier is between 0.1 microns and 20 microns. The barrier layer is disposed on the flexible carrier, and the barrier layer comprises a pair of three pairs of tantalum nitride layers and a hafnium oxide layer.

In an embodiment, the first flexible substrate further has a first planarization layer and a second planarization layer. The first planarization layer is disposed between the flexible carrier and the barrier layer, and the second planarization layer is disposed at the barrier layer. The layer is away from one side of the flexible carrier.

In one embodiment, the yttria layer has a refractive index of 1.473 and the tantalum nitride layer has a refractive index of 1.857.

In an embodiment, the electronic device further includes a pair of substrates and an organic light emitting layer. The opposite substrate is disposed opposite to the first flexible substrate. The opposite substrate has a transparent substrate and an element layer, and the element layer is disposed on the transparent substrate. The organic light emitting layer is disposed between the first flexible substrate and the opposite substrate, and the organic light emitting layer and the element layer are electrically connected.

In an embodiment, the electronic device further includes a filter layer disposed between the second planarization layer and the organic light-emitting layer.

In one embodiment, the electronic device further includes a transparent substrate and a transparent conductive layer, and the transparent substrate is disposed opposite to the first flexible substrate. The transparent conductive layer is disposed on the light transmissive substrate.

In one embodiment, the light transmissive substrate is a second flexible substrate.

In an embodiment, the electronic device further includes a dye layer, an electrolytic layer, and a catalytic layer. The dye layer is disposed on the transparent conductive layer. The electrolytic layer is disposed on the dye layer. The catalytic layer is disposed between the dye layer and the first flexible substrate, and is electrically connected to the dye layer.

In an embodiment, the electronic device further includes a hole transport layer, a polymer organic layer, and an electron collecting layer. The hole transport layer is disposed on the transparent conductive layer. The polymer organic layer is disposed on the hole transport layer. The electron collecting layer is disposed between the polymer organic layer and the first flexible substrate.

In order to achieve the above object, a method for manufacturing a flexible substrate according to the present invention comprises: providing a rigid carrier, forming a release layer on a rigid carrier, forming a flexible carrier on the release layer, and forming a first planarization. The layer is formed on the flexible carrier, the barrier layer is formed on the first planarization layer, the second planarization layer is formed on the barrier layer, and the release layer is separated from the flexible carrier.

As described above, in the method of manufacturing an electronic device and a flexible substrate of the present invention, the first flexible substrate has a flexible carrier and a barrier layer. Wherein, the thickness of the flexible carrier is between 0.1 micrometers and 20 micrometers, and the barrier layer comprises one to three pairs of tantalum nitride layers and a hafnium oxide layer. Since the first flexible substrate is prepared by a high-temperature process, instead of attaching a water-oxygen barrier layer to the externally attached method, the first flexible substrate is not only thinner than the conventional one (the thickness of the substrate of the conventional water-oxygen barrier layer is about It is between 50 and 100 microns, and the high-temperature process film is better, and its water-blocking oxygen capacity is also higher, which makes the electronic device not only have high water-blocking oxygen resistance, but also has thinning characteristics and can improve its wearing. Transmittance.

1, 1a, 1b, 2, 3‧‧‧ electronic devices

11, 21, 31‧‧‧ first soft substrate

11a, 21a, 31a‧‧‧ second flexible substrate

111, 211, 311‧‧‧ soft carrier board

112, 212, 312‧‧ ‧ barrier

1,121, 2121, 3121‧‧‧ tantalum nitride layer

1122, 2122, 3122‧‧‧ yttrium oxide layer

113‧‧‧First flattening layer

114‧‧‧Second flattening layer

12‧‧‧ opposite substrate

121‧‧‧Transparent substrate

122‧‧‧Component layer

13‧‧‧Organic light-emitting layer

14‧‧‧Filter layer

22, 32‧‧‧ Transparent conductive layer

23‧‧‧Dye layer

24‧‧‧Electrolytic layer

25‧‧‧ Catalytic layer

26‧‧‧Photoanode

33‧‧‧ hole transport layer

34‧‧‧ polymer organic layer

35‧‧‧Electronic collection layer

DBL‧‧‧ release layer

G‧‧‧Rigid carrier board

1 is a schematic view of an electronic device according to a first embodiment of the present invention.

2A to 2E are schematic views showing a manufacturing process of the first flexible substrate of FIG. 1, respectively.

3A and 3B are schematic views of different aspects of the electronic device of the first embodiment, respectively.

4 is a schematic diagram of an electronic device according to a second embodiment of the present invention.

FIG. 5 is a schematic diagram of an electronic device according to a third embodiment of the present invention.

Hereinafter, a method of manufacturing an electronic device and a flexible substrate according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals.

The illustrations of all the embodiments of the present invention are only schematic and do not represent the true size and ratio. example.

Please refer to FIG. 1, which is a schematic diagram of an electronic device 1 according to a first embodiment of the present invention.

The electronic device 1 is exemplified by an organic light emitting diode (OLED) display device, and may be illuminated upward or downward. The electronic device 1 includes a first flexible substrate 11 , a pair of substrates 12 , and an organic light emitting layer 13 .

The first flexible substrate 11 is disposed opposite to the opposite substrate 12, and the organic light-emitting layer 13 is disposed between the first flexible substrate 11 and the opposite substrate 12. Here, the first flexible substrate 11 can be a protective substrate of the electronic device 1 and is a water-oxygen barrier substrate. The first flexible substrate 11 is a transparent substrate and has a flexible carrier 111 and a barrier layer 112. In addition, the first flexible substrate 11 of the embodiment further has a first planarization layer 113 and a second planarization layer 114.

The flexible carrier 111 is a flexible film and is a high temperature resistant carrier, and is formed, for example, by coating. The thickness of the flexible carrier 111 is between 0.1 micrometers and 20 micrometers. Preferably, the thickness of the flexible carrier 111 is between 10 microns and 20 microns. The flexible carrier 111 comprises an organic polymer material, and may be, for example, polyimine (PI), polyethylene (PE), polyvinyl chloride (PVC), polystyrene (PS), propylene, fluorinated. Polymer (Fluoropolymer), polyester (nylon) or nylon (nylon). In the present embodiment, the material of the flexible carrier 111 is exemplified by polyimine (PI).

The barrier layer 112 is disposed on the flexible carrier 111. Here, the first planarization layer 113 is first disposed on the flexible carrier 111, and the barrier layer 112 is disposed on the first planarization layer 113. The barrier layer 112 has a thickness of less than 1 micron and includes at least one pair of tantalum nitride (SiNx) layer 1121 and yttrium oxide (SiOx) layer 1122. The barrier layer 112 of the present invention may comprise up to three pairs of tantalum nitride layers 1121 and a hafnium oxide layer 1122 (not shown). In the present embodiment, the barrier layer 112 is exemplified by a pair of tantalum nitride layers 1121 and a hafnium oxide layer 1122. The tantalum nitride layer 1121 and the tantalum oxide layer 1122 are produced by a high temperature process (for example, >300 ° C). Here, the tantalum nitride layer 1121 and the hafnium oxide layer 1122 are separately deposited by plasma assisted chemical vapor deposition (PECVD) at a temperature of 350 °C. The refractive index of the tantalum nitride layer 1121 prepared at a temperature of 350 ° C is 1.857, and the refractive index of the tantalum oxide layer 1121 is 1.473, which is known from the equation of Gladstion-Dale: (n-1) = Kρ (n is the refractive index, ρ For density), the larger the refractive index n, the greater the density ρ, and the denser the film, the resistance The water oxygen rate is also higher. Therefore, the barrier layer of the present invention requires only one to three pairs of the tantalum nitride layer 1121 and the tantalum oxide layer 1122 to achieve a better water-blocking oxygen effect. It is different from the conventional use of low temperature depositors.

The first planarization layer 113 is disposed between the flexible carrier 111 and the barrier layer 112, and the second planarization layer 114 is disposed on the side of the barrier layer 112 away from the flexible carrier 111, and the second planarization layer 114 covers the organic light-emitting layer 13.

In addition, please refer to FIG. 2A to FIG. 2E to illustrate the manufacturing process of the first flexible substrate 11. FIG. 2A to FIG. 2E are respectively schematic diagrams showing the manufacturing process of the first flexible substrate 11 of FIG.

The manufacturing method of the first flexible substrate 11 may include the following steps:

First, as shown in FIG. 2A, a rigid carrier G is provided, such as, but not limited to, glass. Next, as shown in FIG. 2B, a release layer DBL is formed on the rigid carrier G. Here, for example, a release layer DBL is formed on the rigid carrier G by coating. Next, as shown in FIG. 2C, a flexible carrier plate 111 is formed on the release layer DBL. Here, a layer of high temperature resistant material (for example, PI) is coated on the release layer DBL to form a flexible carrier 111. Next, as shown in FIG. 2D, a first planarization layer 113 is formed on the flexible carrier 111, and a barrier layer 112 is formed on the first planarization layer 113. Here, a first planarization layer 113 is formed by coating, and a barrier layer 112 (including a pair of tantalum nitride layers and a hafnium oxide layer) is formed by high temperature CVD plating. Next, as shown in FIG. 2E, a second planarization layer 114 is further formed on the barrier layer 112. Finally, the first flexible substrate 11 including the flexible carrier 111, the first planarization layer 113, the barrier layer 112, and the second planarization layer 114 is obtained by disengaging between the release layer DBL and the flexible carrier 111. .

It is worth mentioning that, because the hardness of the flexible carrier 111 of the first flexible substrate 11 is low, a higher hardness protective layer can be disposed on the outer side of the flexible carrier 111 by lamination or coating. To protect the first flexible substrate 11. The protective layer can be made, for example, of acrylic, epoxy, glass, PMMA, PET, PE, and the like.

In addition, referring to FIG. 1, in the present embodiment, the opposite substrate 12 is a thin film transistor substrate. The opposite substrate 12 has a transparent substrate 121 and an element layer 122, and the element layer 122 is disposed on the transparent substrate 121. The transparent substrate 121 can be a rigid substrate or a flexible substrate, such as but not limited to a glass substrate or a plastic substrate. Here, the transparent substrate 121 Take a glass substrate as an example. In addition, the organic light-emitting layer 13 is electrically connected to the element layer 122 and has an organic light-emitting diode (OLED), and the organic light-emitting diode system emits red, green, and blue light. The element layer 122 of this embodiment may include elements such as a thin film transistor, a capacitor, a conductive layer, a transparent electrode, and the like. One of the thin film electro-crystal systems is used as a selection switch, the gate of which can receive a scanning signal and the drain of which can receive a data signal. The other of the thin film transistors can function as a driving element to control the organic light emitting diode of the organic light emitting layer 13 to emit light.

The electronic device 1 of the present invention includes a first flexible substrate 11 having a flexible carrier 111 and a barrier layer 112. The thickness of the flexible carrier 111 is between 0.1 μm and 20 μm, and the barrier layer 112 includes at least one pair of the tantalum nitride layer 1121 and the hafnium oxide layer 1122. Since the first flexible substrate 11 is prepared by a high-temperature process, instead of attaching a water-oxygen barrier layer to the externally attached method, the first flexible substrate 11 is not only thinner than the conventional one (the substrate of the conventional water-oxygen barrier layer) The thickness is about 50~100 microns), and its water-blocking oxygen capacity is also high, so that the electronic device 1 not only has high water-blocking oxygen resistance, but also has the characteristics of thinning and can improve the transmittance. .

In addition, please refer to FIG. 3A and FIG. 3B, respectively, which are schematic views of the electronic devices 1a and 1b of different aspects of the first embodiment.

As shown in FIG. 3A, the main difference between the electronic device 1a and the electronic device 1 is that the transparent substrate of the electronic device 1a is a second flexible substrate 11a, so that the electronic device 1a can have a high water-blocking capability and a thinner shape. Characteristics. Here, the second flexible substrate 11a has a soft carrier 111, a first planarization layer 113, a barrier layer 112 (a tantalum nitride layer 1121 and a hafnium oxide layer 1122), and a second planarization layer 114, respectively, from bottom to top. The element layer 122 is disposed on the second planarization layer 114.

In addition, as shown in FIG. 3B, the electronic device 1b of FIG. 3B is mainly different from the electronic device 1a of FIG. 3A in that the electronic device 1b further has a filter layer 14 disposed on the second planarization layer 114. It is located between the second planarization layer 114 and the organic light-emitting layer 13. The filter layer 14 includes a red filter portion, a green filter portion, and a blue filter portion (not shown). The organic light-emitting layer 13 of this embodiment emits white light, and when the white light passes through the red filter portion, the green filter portion, and the blue filter portion of the filter layer 14, the electronic device 1b can be made to display color.

In addition, the technical features of other components of the electronic device 1a, 1b can be referred to the electronic device. The same components are set, and will not be described here.

Please refer to FIG. 4, which is a schematic diagram of an electronic device 2 according to a second embodiment of the present invention. The electronic device 2 of this embodiment is exemplified by a Dye Sensitized Solar Cell (DSSC).

The electronic device 2 includes a first flexible substrate 21, a transparent substrate (second flexible substrate 21a), a transparent conductive layer 22, a dye layer 23, an electrolytic layer 24, a catalytic layer 25, and a photoanode (photo cathode). ) Layer 26.

The first flexible substrate 21 is provided opposite to the light-transmitting substrate. The first flexible substrate 21 has a flexible carrier 211 and a barrier layer 212. The barrier layer 212 is disposed on the flexible carrier 211 and has a thickness between 0.1 micrometers and 20 micrometers. In the present embodiment, the material of the flexible carrier 211 is exemplified by polyimine (PI). In addition, the thickness of the barrier layer 212 is less than 1 micrometer, and a pair of tantalum nitride (SiNx) layer 2121 and a yttrium oxide (SiOx) layer 2122 are sequentially disposed on the flexible carrier 21. Among them, the tantalum nitride layer 2121 and the tantalum oxide layer 2122 are produced by a high temperature process (>300 ° C). Here, the tantalum nitride layer 2121 and the tantalum oxide layer 2122 are sequentially deposited by plasma-assisted chemical vapor deposition (PECVD) at a temperature of 350 ° C, and the refractive index of the tantalum nitride layer 2121 prepared at 350 ° C is 1.857. The refractive index of the yttrium oxide layer 2121 is 1.473. According to the Gladstone-Dale equation: (n-1)=Kρ, it can be known that as the refractive index n is larger, the density ρ is larger, and the denser the film quality, the higher the water blocking oxygen ratio.

In addition, the light-transmitting substrate of this embodiment is a second flexible substrate 21a. The second flexible substrate 21a has the same structure as the first flexible substrate 21, and also includes a flexible carrier 211 and a barrier layer 212, as shown in FIG. 4, and the technical content thereof will not be described herein. However, in other embodiments, the transparent substrate may also be a generally rigid substrate, and is, for example, a glass substrate.

The transparent conductive layer 22 is provided on the light-transmitting substrate (second flexible substrate 21a). The material of the transparent conductive layer 22 may be a light-transmissive conductive oxide (TCO), and may be, for example, indium tin oxide, tin oxide, zinc oxide, or fluorine-doped tin dioxide (Sn:F).

The dye layer 23 is disposed on the transparent conductive layer 22. Wherein, in the formation of the dye layer 23, a dye adsorption layer (for example, titanium dioxide, not shown) may be applied to the transparent conductive layer 22, and then the dye may be filled to allow the titanium dioxide to adsorb the dye to form the dye layer 23. When light is incident, the dye layer 23 generates electrons, and electrons are transferred to the transparent conductive layer 22. Here, dye The dye in the material layer 23 may contain, for example, a metal complex dye such as ruthenium (Ru) or an organic dye such as a methyl group or a phthalocyanine.

The electrolytic layer 24 is disposed on the dye layer 23. The electronic device 2 further includes an insulating layer (not shown). The insulating layer is located between the first flexible substrate 21 and the transparent substrate (the second flexible substrate 21a) to electrically insulate the two. The accommodating portion accommodates the electrolyte of the electrolytic layer 24.

The catalytic layer 25 is disposed between the dye layer 23 and the first flexible substrate 21 and is in contact with the electrolyte layer of the electrolytic layer 24 to be electrically connected to the dye layer 23 . The catalytic layer 25 is made of, for example, platinum (Pt) metal and accelerates the power output of the dye-sensitized solar cell. In addition, the photoanode layer 26 is disposed between the transparent conductive layer 22 and the dye layer 23.

In addition, please refer to FIG. 5, which is a schematic diagram of an electronic device 3 according to a third embodiment of the present invention. The electronic device 3 of this embodiment is exemplified by a polymer organic solar cell.

The electronic device 3 includes a first flexible substrate 31, a transparent substrate (second flexible substrate 31a), a transparent conductive layer 32, a hole transport layer 33, a polymer organic layer 34, and an electron collecting layer 35.

The first flexible substrate 31 is provided opposite to the light-transmitting substrate. The first flexible substrate 31 has a flexible carrier 311 and a barrier layer 312. The barrier layer 312 is disposed on the flexible carrier 311 and has a thickness between 0.1 micrometers and 20 micrometers. In the present embodiment, the material of the flexible carrier 311 is exemplified by polyimine (PI). In addition, the thickness of the barrier layer 312 is less than 1 micrometer, and a pair of tantalum nitride (SiNx) layer 3121 and a yttrium oxide (SiOx) layer 3122 are sequentially disposed on the flexible carrier 31. Among them, the tantalum nitride layer 3121 and the tantalum oxide layer 3122 are produced by a high temperature process (>300 ° C). Here, the tantalum nitride layer 3121 and the tantalum oxide layer 3122 are respectively deposited by a plasma-assisted chemical vapor deposition (PECVD) method at a temperature of 350 ° C, and the refractive index of the tantalum nitride layer 3121 prepared at 350 ° C is 1.857. The refractive index of the yttria layer 3121 is 1.473. According to the Gladstone-Dale equation: (n-1)=Kρ, it can be known that as the refractive index n is larger, the density ρ is larger, and the denser the film quality, the higher the water blocking oxygen ratio.

In addition, the light-transmitting substrate of this embodiment is a second flexible substrate 31a. The second flexible substrate 31a has the same structure as the first flexible substrate 31, as shown in FIG. The flexible carrier 311 and a barrier layer 312 are not described herein. However, in other embodiments, the light-transmissive substrate (second flexible substrate 31a) may also be a general rigid substrate, and is, for example, a glass substrate.

The transparent conductive layer 32 is provided on the light-transmitting substrate (second flexible substrate 31a). The material of the transparent conductive layer 32 may be a light-transmissive conductive oxide (TCO), and may be, for example, indium tin oxide, tin oxide, zinc oxide, or fluorine-doped tin dioxide (Sn:F). Here, the transparent conductive layer 32 is a hole collecting electrode.

The hole transport layer 33 is disposed on the transparent conductive layer 32. Here, a highly transparent hole transport layer 33 is formed on the transparent conductive layer 32 by coating. The polymer organic layer 34 is provided on the hole transport layer 33. Here, the polymer organic layer 34 is an active layer that absorbs light and is formed on the hole transport layer 33 by coating. Further, the electron collection layer 35 is provided between the polymer organic layer 34 and the first flexible substrate 31. The material of the electron collecting layer 35 may include, for example, calcium metal or aluminum metal, and is formed on the polymer organic layer 34, for example, by vapor deposition. When the light-emitting polymer organic solar cell is irradiated, the polymer organic layer 34 absorbs light, and the hole is collected by the transparent conductive layer 32, and the electron collecting layer 35 collects electrons, so that the polymer organic solar cell can output a current.

In summary, in the method of manufacturing an electronic device and a flexible substrate of the present invention, the first flexible substrate has a flexible carrier and a barrier layer. Wherein, the thickness of the flexible carrier is between 0.1 micrometers and 20 micrometers, and the barrier layer comprises one to three pairs of tantalum nitride layers and a hafnium oxide layer. Since the first flexible substrate is prepared by a high-temperature process, instead of attaching a water-oxygen barrier layer to the externally attached method, the first flexible substrate is not only thinner than the conventional one (the thickness of the substrate of the conventional water-oxygen barrier layer is about It is between 50 and 100 microns, and the high-temperature process film has better density, and its water-blocking oxygen capacity is also high, which makes the electronic device not only have high water-blocking oxygen resistance, but also has thinning characteristics and can be improved. Its penetration rate.

The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

1‧‧‧Electronic device

11‧‧‧First flexible substrate

111‧‧‧Soft carrier board

112‧‧‧Barrier

1121‧‧‧layer of tantalum nitride

1122‧‧‧Oxide layer

113‧‧‧First flattening layer

114‧‧‧Second flattening layer

12‧‧‧ opposite substrate

121‧‧‧Transparent substrate

122‧‧‧Component layer

13‧‧‧Organic light-emitting layer

Claims (9)

An electronic device comprising: a first flexible substrate having: a first flexible carrier having a thickness between 0.1 μm and 20 μm; and a first barrier layer disposed on the first flexible carrier And the first barrier layer comprises a pair of three pairs of a tantalum nitride layer and a tantalum oxide layer; and a second flexible substrate is disposed opposite the first flexible substrate and has: a second flexible carrier, The thickness is between 0.1 micrometers and 20 micrometers; and a second barrier layer is disposed on the second flexible carrier, and the second barrier layer comprises a pair of three pairs of tantalum nitride layers and tantalum oxide Floor. The electronic device of claim 1, wherein the first flexible substrate further has a first planarization layer and a second planarization layer, the first planarization layer being disposed on the flexible carrier and the barrier Between the layers, the second planarization layer is disposed on a side of the barrier layer away from the flexible carrier. The electronic device according to claim 1, wherein the yttria layer has a refractive index of 1.473 and the yttrium nitride layer has a refractive index of 1.857. The electronic device of claim 2, further comprising: a component layer disposed between the first flexible substrate and the second flexible substrate; and an organic light emitting layer disposed on the component layer and the first The organic light-emitting layer is electrically connected to the element layer between a flexible substrate. The electronic device of claim 4, further comprising: a filter layer disposed between the second planarization layer and the organic light-emitting layer. The electronic device of claim 1, further comprising: a transparent conductive layer disposed between the first flexible substrate and the second flexible substrate. The electronic device of claim 6, further comprising: a dye layer disposed on the transparent conductive layer; an electrolytic layer disposed on the dye layer; and a catalytic layer disposed on the dye layer and Between the first flexible substrates and electrically connected to the dye layer Pick up. The electronic device of claim 6, further comprising: a hole transport layer disposed on the transparent conductive layer; a polymer organic layer disposed on the hole transport layer; and an electron collecting layer And disposed between the polymer organic layer and the first flexible substrate. A method for manufacturing a flexible substrate, comprising the steps of: providing a rigid carrier; forming a release layer on the rigid carrier; forming a flexible carrier on the release layer; forming a first planarization layer thereon a flexible carrier; forming a barrier layer on the first planarization layer; forming a second planarization layer on the barrier layer; and separating from the release layer and the flexible carrier.