CN104425735A - Electronic device - Google Patents
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- CN104425735A CN104425735A CN201310408306.6A CN201310408306A CN104425735A CN 104425735 A CN104425735 A CN 104425735A CN 201310408306 A CN201310408306 A CN 201310408306A CN 104425735 A CN104425735 A CN 104425735A
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- flexible base
- base plate
- electronic installation
- support plate
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- 239000000758 substrate Substances 0.000 claims abstract description 55
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 253
- 230000004888 barrier function Effects 0.000 claims description 58
- 238000009434 installation Methods 0.000 claims description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 20
- 229920002521 macromolecule Polymers 0.000 claims description 15
- 239000012044 organic layer Substances 0.000 claims description 12
- 239000003792 electrolyte Substances 0.000 claims description 10
- 230000003197 catalytic effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 40
- 229910052760 oxygen Inorganic materials 0.000 abstract description 40
- 239000001301 oxygen Substances 0.000 abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 35
- 230000000903 blocking effect Effects 0.000 abstract description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 230000035515 penetration Effects 0.000 abstract 1
- 239000000975 dye Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000010030 laminating Methods 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2095—Light-sensitive devices comprising a flexible sustrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses an electronic device which comprises a first flexible substrate, wherein the first flexible substrate is provided with a flexible carrier plate and a blocked layer; the thickness of the flexible carrier plate ranges from 0.1 micron to 20 microns; the blocked layer is arranged on the flexible carrier plate and comprises one to three pairs of silicon nitride layers and silicon monoxide layers. According to the electronic device disclosed by the invention, the first flexible substrate not only is small in thickness, but also the high-temperature film is relatively excellent, and the water and oxygen blocking capability is further relatively high, so that the electronic device not only has relatively high water and oxygen blocking capability, but also has the thinning characteristic, thereby improving the penetration rate.
Description
Technical field
The present invention about a kind of electronic installation, especially in regard to a kind of electronic installation with water oxygen barrier layer.
Background technology
Because flexible display device has lightweight, deflection, resistance toly falls the not easily characteristic such as broken and shock-resistant, become one of product of all big enterprises' active research and development.Wherein, the display medium (such as Organic Light Emitting Diode) of flexible display device is because having high water oxygen susceptibility, easily and oxygen or aqueous vapor carry out reacting and losing its original characteristic, and then affect the useful life of display unit, therefore, after flexible display device completes, prior art utilizes laminating type to attach one deck water oxygen barrier layer in the outside of display unit, in order to avoid aqueous vapor or oxygen invade and destroys display unit.
In addition, solar energy itself there is no pollution problem and obtains easily, never exhaust, therefore solar energy becomes one of important alternative energy.The solar cell of more normal applied solar energy is a kind of photo-electric conversion element, and it, via after solar light irradiation, becomes electric energy transform light energy.Solar cell of a great variety, such as silica-based (silicon-based) solar cell, semiconducting compound (compound semiconductor) solar cell or organic (organic) solar cell or DSSC (Dye Sensitized Solar Cell, DSSC).For DSSC; avoid oxygen or aqueous vapor to protect solar cell to invade and affect its useful life; prior art is still and utilizes laminating type to attach one deck water oxygen barrier layer in the outside of DSSC, in order to avoid aqueous vapor or oxygen invade and destroys DSSC.
But, existing water oxygen barrier layer is that the oxygen layer that blocks water is made on a base material, the not only thickness of base material thicker (between about 50 ~ 100 microns), and the material that uses of base material is scarcely high temperature resistant and not acid and alkali-resistance, therefore low temperature (<120 DEG C) plated film mode is mostly utilized to make water oxygen barrier layer.But, low due to density with the oxygen layer that blocks water that low temperature process makes, such that the efficiency of its oxygen that blocks water is poor (is such as less than 10
-2g/m
2/ day).In addition, aqueous vapor and oxygen infiltrate except display unit except the side of the easy adhesive glue material from using during attaching process, also easily because residual stress during laminating, make water oxygen barrier layer be out of shape and affect yield.In addition, during the laminating of water oxygen barrier layer, also easily produce bubble by the impact of particulate (particles), or also because of stress during partially subsides, cause water oxygen barrier layer to break and the decline of the oxygen rate that causes blocking water.
Therefore, how to provide a kind of electronic installation, not only there is the higher oxygen ability that blocks water, also make electronic installation have the feature of slimming and improve its penetrance, become one of important topic.
Summary of the invention
Because above-mentioned problem, object of the present invention not only has the higher oxygen ability that blocks water for providing a kind of, also has the feature of slimming and can improve the electronic installation of penetrance.
Reach above-mentioned purpose, comprise one first flexible base plate according to a kind of electronic installation of the present invention, the first flexible base plate has a soft support plate and a barrier layer.The thickness of soft support plate is between 0.1 micron and 20 microns.Barrier layer is arranged on soft support plate, and barrier layer comprises a pair to three right silicon nitride layer and silicon oxide layer.
In one embodiment, the first flexible base plate has more one first planarization layer and one second planarization layer, and the first planarization layer is arranged between soft support plate and barrier layer, and the second planarization layer is arranged at the side of barrier layer away from soft support plate.
In one embodiment, the refractive index of silicon oxide layer is 1.473, and the refractive index of silicon nitride layer is 1.857.
In one embodiment, electronic installation more comprises a subtend substrate and an organic luminous layer.Subtend substrate is relative with the first flexible base plate and establish, and subtend substrate has a transparent substrates and an element layer, and element layer is arranged on transparent substrates.Organic luminous layer is arranged between the first flexible base plate and subtend substrate, and organic luminous layer and element layer are electrically connected.
In one embodiment, electronic installation more comprises a filter layer, and it is arranged between the second planarization layer and organic luminous layer.
In one embodiment, electronic installation more comprises a transparent substrates and a transparency conducting layer, and transparent substrates is relative with the first flexible base plate and establish.Transparency conducting layer is arranged on transparent substrates.
In one embodiment, transparent substrates is one second flexible base plate.
In one embodiment, electronic installation more comprises a dye coating, an electrolyte layers and a Catalytic Layer.Dye coating is arranged on transparency conducting layer.Electrolyte layers is arranged on dye coating.Catalytic Layer is arranged between dye coating and the first flexible base plate, and is electrically connected with dye coating.
In one embodiment, electronic installation more comprises an electric hole transport layer, a macromolecule organic layer and an electron collection layer.Electricity hole transport layer is arranged on transparency conducting layer.Macromolecule organic layer is arranged in the transport layer of electric hole.Electron collection layer is arranged between macromolecule organic layer and the first flexible base plate.
In one embodiment, the manufacture method of the first flexible base plate comprises provides a rigidity support plate, formed a release layer on rigidity support plate, form soft support plate on release layer, formed the first planarization layer on soft support plate, formed barrier layer on the first planarization layer, form the second planarization layer on barrier layer and by release between release layer and soft support plate.
From the above, because electronic installation of the present invention comprises one first flexible base plate, the first flexible base plate has a soft support plate and a barrier layer.Wherein, the thickness of soft support plate is between 0.1 micron and 20 microns, and barrier layer comprises a pair to three right silicon nitride layer and silicon oxide layer.Because the first flexible base plate is prepared by high-temperature technology, instead of mode of pasting in addition attaches one deck water oxygen barrier layer, compare with prior art, first flexible base plate is thinner thickness (base material thickness of existing water oxygen barrier layer is about between 50 ~ 100 microns) not only, and high-temperature technology film quality is better, its oxygen ability that blocks water is also higher, electronic installation is not only had outside the higher oxygen ability that blocks water, also has the feature of slimming and can improve its penetrance.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a application's part, does not form limitation of the invention.In the accompanying drawings:
Fig. 1 is the schematic diagram of a kind of electronic installation of first embodiment of the invention.
Fig. 2 A to Fig. 2 E is respectively the manufacturing process schematic diagram of first flexible base plate of Fig. 1.
Fig. 3 A and Fig. 3 B is respectively the schematic diagram of the electronic installation of the different aspects of the first embodiment.
Fig. 4 is the schematic diagram of a kind of electronic installation of second embodiment of the invention.
Fig. 5 is the schematic diagram of a kind of electronic installation of third embodiment of the invention.
Drawing reference numeral illustrates:
1,1a, 1b, 2,3: electronic installation
11,21,31: the first flexible base plates
11a, 21a, 31a: the second flexible base plate
111,211,311: soft support plate
112,212,312: barrier layer
1121,2121,3121: silicon nitride layer
1122,2122,3122: silicon oxide layer
113: the first planarization layers
114: the second planarization layers
12: subtend substrate
121: transparent substrates
122: element layer
13: organic luminous layer
14: filter layer
22,32: transparency conducting layer
23: dye coating
24: electrolyte layers
25: Catalytic Layer
26: light anode layer
33: electric hole transport layer
34: macromolecule organic layer
35: electron collection layer
DBL: release layer
G: rigidity support plate
Embodiment
Hereinafter with reference to correlative type, the electronic installation according to present pre-ferred embodiments is described, wherein identical element is illustrated with identical reference marks.
The diagram just signal of all enforcement aspects of the present invention, does not represent full-size(d) and ratio.
Please refer to shown in Fig. 1, it is the schematic diagram of a kind of electronic installation 1 of first embodiment of the invention.
Electronic installation 1 for an Organic Light Emitting Diode (OLED) display unit, and can be upwards luminous or luminous downwards.Wherein, electronic installation 1 comprises the first flexible base plate 11, subtend substrate 12 and organic luminous layer 13.
First flexible base plate 11 is relative with subtend substrate 12 and establish, and organic luminous layer 13 is arranged between the first flexible base plate 11 and subtend substrate 12.In this, the first flexible base plate 11 can be the protective substrate of electronic installation 1, and is a water oxygen isolating substrate.Wherein, the first flexible base plate 11 is a transparent substrates, and has soft support plate 111 and a barrier layer 112.In addition, first flexible base plate 11 of the present embodiment has more one first planarization layer 113 and one second planarization layer 114.
Soft support plate 111 is a flexible film (film), and is a high temperature resistant support plate, and is such as formed with coating method, and the thickness of soft support plate 111 is between 0.1 micron and 20 microns.Preferably, the thickness of soft support plate 111 is between 10 microns and 20 microns.Soft support plate 111 comprises high-molecular organic material, such as can be polyimides (PI), polyethylene (Polyethylene, PE), polyvinyl chloride (Polyvinylchloride, PVC), polystyrene (PS), propylene, fluorinated polymer (Fluoropolymer), polyester fiber (polyester) or nylon (nylon) etc.In the present embodiment, the material of soft support plate 111 is for polyimides (PI).
Barrier layer 112 is arranged at soft support plate 111.In this, first arrange on the soft support plate 111 of the first planarization layer 113, then barrier layer 112 is set on the first planarization layer 113.The thickness of barrier layer 112 is less than 1 micron, and comprises at least one pair of silicon nitride (SiNx) layer 1121 and silica (SiOx) layer 1122.Barrier layer 112 of the present invention can comprise at most three right silicon nitride layers 1121 and silicon oxide layer 1122(schemes not show).In the present embodiment, barrier layer 112 is the silicon nitride layers 1121 with a pair is example with silicon oxide layer 1122.Wherein, silicon nitride layer 1121 and silicon oxide layer 1122 make with high-temperature technology (such as > 300 DEG C).In this, be with temperature respectively deposited silicon nitride layer 1121 and the silicon oxide layer 1122 of ion growth form chemical vapour deposition (CVD) (PECVD) in 350 DEG C.Be 1.857 in the refractive index of silicon nitride layer 1121 of temperature 350 DEG C preparation, the refractive index of silicon oxide layer 1121 is 1.473, according to Gladstion-Dale equation: (n-1)=K ρ can learn (n be refractive index, ρ be density), when refractive index n is larger, its density p is also larger, film quality is finer and close, and its oxygen rate that blocks water is also higher.Therefore barrier layer of the present invention only needs one to three right silicon nitride layer 1121 and silicon oxide layer 1122 can reach the oxygen effect that preferably blocks water.The different of low temperature depositing are utilized from existing.
First planarization layer (Planar layer) 113 is arranged between soft support plate 111 and barrier layer 112, and the second planarization layer 114 is arranged at the side of barrier layer 112 away from soft support plate 111, and the second planarization layer 114 covers organic luminous layer 13.
In addition, shown in Fig. 2 A to Fig. 2 E, so that the manufacturing process of the first flexible base plate 11 to be described, wherein, Fig. 2 A to Fig. 2 E is respectively the manufacturing process schematic diagram of first flexible base plate 11 of Fig. 1.
The manufacture method of the first flexible base plate 11 can comprise following steps:
First, as shown in Figure 2 A, provide a rigidity support plate G, rigidity support plate G is for example and without limitation to glass.Then, as shown in Figure 2 B, a release layer DBL is formed on rigidity support plate G.In this, such as, form one deck release layer DBL on rigidity support plate G with coating method.Then, as shown in Figure 2 C, the soft support plate 111 of one deck is formed on release layer DBL.In this, be coated with one deck exotic material (such as PI) on release layer DBL, to form soft support plate 111.Then, as shown in Figure 2 D, form the first planarization layer 113 on soft support plate 111, and form barrier layer 112 on the first planarization layer 113.In this, form one deck first planarization layer 113 with coating method, and form barrier layer 112(in the CVD plated film mode of high temperature and comprise a pair silicon nitride layer and silicon oxide layer)., as shown in Figure 2 E, then form one deck second planarization layer 114 on barrier layer 112 then.Finally, by release between release layer DBL and soft support plate 111, the first flexible base plate 11 including soft support plate 111, first planarization layer 113, barrier layer 112, second planarization layer 114 can be obtained.
It is worth mentioning that, because the hardness of the soft support plate 111 of the first flexible base plate 11 is lower, therefore in enforcement, the protective layer of one deck higher hardness can be set with laminating or coating method in the outside of soft support plate 111, to protect the first flexible base plate 11.Protective layer such as can be made by the material such as acryl, epoxy resin, glass, PMMA, PET, PE.
In addition, shown in Fig. 1, in the present embodiment, subtend substrate 12 is a thin film transistor base plate.Subtend substrate 12 has transparent substrates 121 and an element layer 122, and element layer 122 is arranged on transparent substrates 121.Wherein, transparent substrates 121 can be a rigid substrates or a flexible base plate, is for example and without limitation to glass substrate or plastic substrate.In this, transparent substrates 121 is for a glass substrate.In addition, organic luminous layer 13 and element layer 122 are electrically connected, and have Organic Light Emitting Diode (OLED), and Organic Light Emitting Diode to send redness, green and blue light.The element layer 122 of the present embodiment can comprise thin-film transistor, electric capacity, conductive layer, transparency electrode ... Deng element.The thin-film transistor of one of them is as selector switch, and its grid (gate) can receive one scan signal, and its drain electrode (drain) can receive a data-signal.Wherein another thin-film transistor can be used as a driving element to control the organic light-emitting diode of a current drives organic luminous layer 13.
Hold, electronic installation 1 of the present invention comprises one first flexible base plate 11, first flexible base plate 11 and has soft support plate 111 and a barrier layer 112.Wherein, the thickness of soft support plate 111 is between 0.1 micron and 20 microns, and barrier layer 112 comprises at least one pair of silicon nitride layer 1121 and silicon oxide layer 1122.Because the first flexible base plate 11 is prepared by high-temperature technology, instead of mode of pasting in addition attaches one deck water oxygen barrier layer, compare with prior art, first flexible base plate 11 is thinner thickness (base material thickness of existing water oxygen barrier layer is about between 50 ~ 100 microns) not only, and it blocks water, oxygen ability is also higher, electronic installation 1 is not only had outside the higher oxygen ability that blocks water, also there is the feature of slimming and its penetrance can be improved.
In addition, please respectively with reference to shown in Fig. 3 A and Fig. 3 B, it is respectively the schematic diagram of electronic installation 1a, 1b of the different aspects of the first embodiment.
As shown in Figure 3A, main different of electronic installation 1a and electronic installation 1 are, the transparent substrates of electronic installation 1a is one second flexible base plate 11a, therefore electronic installation 1a can have the feature of higher block water oxygen ability and more slimming.In this, second flexible base plate 11a from bottom to top sequentially has soft support plate 111, first planarization layer 113, barrier layer 112(silicon nitride layer 1121 and silicon oxide layer 1122), the second planarization layer 114, element layer 122 is then arranged on the second planarization layer 114.
In addition, as shown in Figure 3 B, main different of the electronic installation 1b of Fig. 3 B and the electronic installation 1a of Fig. 3 A are, electronic installation 1b has more a filter layer 14, filter layer 14 is arranged at the second planarization layer 114, and between the second planarization layer 114 and organic luminous layer 13.Filter layer 14 comprises red filter portion, green filter portion and blue filter portion (figure does not show).The organic luminous layer 13 of this embodiment sends white light, when white light by the red filter portion of filter layer 14, green filter portion and blue filter portion time, electronic installation 1b can be made to demonstrate color.
In addition, the technical characteristic of other element of electronic installation 1a, 1b can refer to the similar elements of electronic installation 1, repeats no more in this.
Please refer to shown in Fig. 4, it is the schematic diagram of a kind of electronic installation 2 of second embodiment of the invention.The electronic installation 2 of the present embodiment is for a DSSC (Dye Sensitized Solar Cell, DSSC).
Electronic installation 2 comprises one first flexible base plate 21, transparent substrates (the second flexible base plate 21a), transparency conducting layer 22, dye coating 23, electrolyte layers 24, Catalytic Layer 25 and a smooth anode (photo cathode) layer 26.
First flexible base plate 21 is relative with transparent substrates and establish.First flexible base plate 21 has soft support plate 211 and a barrier layer 212.Barrier layer 212 is arranged at soft support plate 211, and its thickness is between 0.1 micron and 20 microns.In the present embodiment, the material of soft support plate 211 is for polyimides (PI).In addition, the thickness of barrier layer 212 is less than 1 micron, and silicon nitride (SiNx) layer 2121 comprising a pair is sequentially arranged on soft support plate 21 with silica (SiOx) layer 2122.Wherein, silicon nitride layer 2121 and silicon oxide layer 2122 make with high-temperature technology (> 300 DEG C).In this, in ion growth form chemical vapour deposition (CVD) (PECVD) mode in the temperature deposited in sequential silicon nitride layer 2121 of 350 DEG C and silicon oxide layer 2122, be 1.857 in the refractive index of silicon nitride layers 2121 of 350 DEG C of preparations, the refractive index of silicon oxide layer 2121 is 1.473.According to Gladstone-Dale equation: (n-1)=K ρ can learn, when refractive index n is larger, its density p is also larger, and film quality is finer and close, and its oxygen rate that blocks water is also higher.
In addition, the transparent substrates of the present embodiment is one second flexible base plate 21a.Second flexible base plate 21a has identical structure with the first flexible base plate 21, also comprises soft support plate 211 and a barrier layer 212, as shown in Figure 4, in this, repeats no more its technology contents.But, in other enforcement aspect, transparent substrates also can use general rigid substrates, such as, be a glass substrate.
Transparency conducting layer 22 is arranged on transparent substrates (the second flexible base plate 21a).The material of transparency conducting layer 22 can be light transmitting conductive oxide (TCO), such as, can be the tin ash (Sn:F) of tin indium oxide, tin oxide, zinc oxide or doped with fluorine.
Dye coating 23 is arranged on transparency conducting layer 22.Wherein, in time forming dye coating 23, first a Dye Adsorption layer (such as titanium dioxide, does not show in figure) can be coated on transparency conducting layer 22, refill dyestuff, to allow titanium dioxide absorbing dye and form dye coating 23.When light, dye coating 23 can produce electronics, and electrons is passed to transparency conducting layer 22.In this, the dyestuff in dye coating 23 such as can comprise the metal misfit such as ruthenium (Ru) and look for element or the organic pigment such as methyl, phthalocyanine.
Electrolyte layers 24 is arranged on dye coating 23.In this, electronic installation 2 more can comprise an insulating barrier (figure does not show), and insulating barrier is positioned between the first flexible base plate 21 and transparent substrates (the second flexible base plate 21a) and makes the two be electrically insulated, and has a holding part, with the electrolyte of accommodating electrolyte layers 24.
Catalytic Layer 25 is arranged between dye coating 23 and the first flexible base plate 21, and contacts the electrolyte of electrolyte layers 24 and be electrically connected with dye coating 23.Catalytic Layer 25 is such as made for platinum (Pt) metal, and can accelerate the electric power output of DSSC.In addition, light anode layer 26 is arranged between transparency conducting layer 22 and dye coating 23.
In addition, please refer to shown in Fig. 5, it is the schematic diagram of a kind of electronic installation 3 of third embodiment of the invention.The electronic installation 3 of the present embodiment is for a macromolecule organic (organic) solar cell.
Electronic installation 3 comprises one first flexible base plate 31, transparent substrates (the second flexible base plate 31a), transparency conducting layer 32, electric hole transmitting layer 33, macromolecule organic layer 34 and an electron collection layer 35.
First flexible base plate 31 is relative with transparent substrates and establish.First flexible base plate 31 has soft support plate 311 and a barrier layer 312.Barrier layer 312 is arranged on soft support plate 311, and its thickness is between 0.1 micron and 20 microns.In the present embodiment, the material of soft support plate 311 is for polyimides (PI).In addition, the thickness of barrier layer 312 is less than 1 micron, and silicon nitride (SiNx) layer 3121 comprising a pair is sequentially arranged on soft support plate 31 with silica (SiOx) layer 3122.Wherein, silicon nitride layer 3121 and silicon oxide layer 3122 make with high-temperature technology (> 300 DEG C).In this, with ion growth form chemical vapour deposition (CVD) (PECVD) mode difference deposited silicon nitride layer 3121 and silicon oxide layer 3122 when the temperature of 350 DEG C, be 1.857 in the refractive index of silicon nitride layers 3121 of 350 DEG C of preparations, the refractive index of silicon oxide layer 3121 is 1.473.According to Gladstone-Dale equation: (n-1)=K ρ can learn, when refractive index n is larger, its density p is also larger, and film quality is finer and close, and its oxygen rate that blocks water is also higher.
In addition, the transparent substrates of the present embodiment is one second flexible base plate 31a.Second flexible base plate 31a has identical structure with the first flexible base plate 31, as shown in Figure 5, also comprises soft support plate 311 and a barrier layer 312, in this, repeats no more its technology contents.But, in other enforcement aspect, transparent substrates (the second flexible base plate 31a) also can use general rigid substrates, such as, be a glass substrate.
Transparency conducting layer 32 is arranged on transparent substrates (the second flexible base plate 31a).The material of transparency conducting layer 32 can be light transmitting conductive oxide (TCO), such as, can be the tin ash (Sn:F) of tin indium oxide, tin oxide, zinc oxide or doped with fluorine.In this, transparency conducting layer 32 is an electric hole passive electrode.
Electricity hole transmitting layer 33 is arranged on transparency conducting layer 32.In this, on transparency conducting layer 32, form the electric hole transmitting layer 33 of a floor height printing opacity with coating method.Macromolecule organic layer 34 is arranged on electric hole transmitting layer 33.In this, macromolecule organic layer 34 is a light-absorbing active layers, and is formed on electric hole transmitting layer 33 with coating method.In addition, electron collection layer 35 is arranged between macromolecule organic layer 34 and the first flexible base plate 31.The material of electron collection layer 35 such as can comprise calcium metal or aluminum metal, such as, be formed on macromolecule organic layer 34 in evaporation (evaporating) mode.When irradiation light macromolecule organic solar batteries, after macromolecule organic layer 34 absorbs light, collect electric hole by transparency conducting layer 32, electron collection layer 35 collects electronics, makes the exportable electric current of macromolecule organic solar batteries.
In sum, because electronic installation of the present invention comprises one first flexible base plate, the first flexible base plate has a soft support plate and a barrier layer.Wherein, the thickness of soft support plate is between 0.1 micron and 20 microns, and barrier layer comprises a pair to three right silicon nitride layer and silicon oxide layer.Because the first flexible base plate is prepared by high-temperature technology, instead of mode of pasting in addition attaches one deck water oxygen barrier layer, compare with prior art, first flexible base plate is thinner thickness (base material thickness of existing water oxygen barrier layer is about between 50 ~ 100 microns) not only, and high-temperature technology having precise film quality degree is better, its oxygen ability that blocks water is also higher, electronic installation is not only had outside the higher oxygen ability that blocks water, also has the feature of slimming and can improve its penetrance.
The foregoing is only illustrative, but not be restricted person.Anyly do not depart from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be contained in right.
Claims (10)
1. an electronic installation, is characterized in that, comprising:
One first flexible base plate, has;
One soft support plate, its thickness is between 0.1 micron and 20 microns; And
One barrier layer, is arranged on described soft support plate, and described barrier layer comprises a pair to three right silicon nitride layer and silicon oxide layer.
2. electronic installation according to claim 1, it is characterized in that, described first flexible base plate has more one first planarization layer and one second planarization layer, described first planarization layer is arranged between described soft support plate and described barrier layer, and described second planarization layer is arranged at the side of described barrier layer away from described soft support plate.
3. electronic installation according to claim 1, is characterized in that, the refractive index of described silicon oxide layer is 1.473, and the refractive index of described silicon nitride layer is 1.857.
4. electronic installation according to claim 2, is characterized in that, more comprises:
One subtend substrate, relative with described first flexible base plate and establish, described subtend substrate has a transparent substrates and an element layer, and described element layer is arranged on described transparent substrates; And
One organic luminous layer, be arranged between described first flexible base plate and described subtend substrate, described organic luminous layer and described element layer are electrically connected.
5. electronic installation according to claim 2, is characterized in that, more comprises:
One filter layer, is arranged between described second planarization layer and described organic luminous layer.
6. electronic installation according to claim 1, is characterized in that, more comprises:
One transparent substrates is relative with described first flexible base plate and establish; And
One transparency conducting layer, is arranged at described on transparent substrates.
7. electronic installation according to claim 6, is characterized in that, described transparent substrates is one second flexible base plate.
8. electronic installation according to claim 7, is characterized in that, more comprises:
One dye coating, is arranged on described transparency conducting layer;
One electrolyte layers, is arranged on described dye coating; And
One Catalytic Layer, is arranged between dye coating and described first flexible base plate, and is electrically connected with described dye coating.
9. electronic installation according to claim 7, is characterized in that, more comprises:
One electric hole transport layer, is arranged on described transparency conducting layer;
One macromolecule organic layer, is arranged in the transport layer of described electric hole; And
One electron collection layer, is arranged between described macromolecule organic layer and described first flexible base plate.
10. electronic installation according to claim 2, it is characterized in that, the manufacture method of described first flexible base plate comprises: provide a rigidity support plate, form a release layer on described rigidity support plate, form described soft support plate on described release layer, form described first planarization layer on described soft support plate, form described barrier layer on described first planarization layer, form described second planarization layer on described barrier layer and by release between described release layer and described soft support plate.
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| CN111584744A (en) * | 2020-05-13 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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Application publication date: 20150318 |