CN108269827A - Thin-film packing structure, flexible display panels and thin-film packing structure production method - Google Patents
Thin-film packing structure, flexible display panels and thin-film packing structure production method Download PDFInfo
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- CN108269827A CN108269827A CN201710002946.5A CN201710002946A CN108269827A CN 108269827 A CN108269827 A CN 108269827A CN 201710002946 A CN201710002946 A CN 201710002946A CN 108269827 A CN108269827 A CN 108269827A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The present invention provides a kind of thin-film packing structure, the thin-film packing structure includes inorganic compounding film layer, the inorganic compounding film layer is set to the top of Organic Light Emitting Diode and to cover the Organic Light Emitting Diode, and the inorganic compounding film layer is alternately stacked and sets for the inorganic mantle layer of different refractivity and inorganic hard membrane layer.The present invention also provides a kind of flexible display panels and thin-film packing structure production method.Above-mentioned thin-film packing structure, including being alternately stacked the inorganic compounding film layer for setting and forming using the inorganic mantle layer and inorganic hard membrane layer of different refractivity, inorganic substances compound membrane floor height, low stress overlap mutually and match with the stress of Organic Light Emitting Diode, flexibility is moderate, inorganic compounding film layer will not be ruptured when flexible display panels are bent, and then realize the storage life for promoting thin-film packing structure.
Description
Technical field
The present invention relates to flexible display panels thin film encapsulation technology field more particularly to a kind of thin-film packing structure and making
Method and a kind of flexible display panels of thin-film packing structure.
Background technology
Flexible display technologies developed rapidly in recent years, and flexible display panels all achieve very from screen size to display quality
Much progress.The cathode-ray tube (Cathode Ray Tube, CRT) to disappear is either on the verge of, still the liquid crystal of mainstream now
Show panel (Liquid Crystal Display, LCD), inherently belong to traditional rigid display panel.With it is traditional firm
Property display panel is compared, and flexible display panels have many advantages, such as, such as impact resistance, and shock resistance is strong, light-weight, small, take
With more convenient etc..
In general, flexible display panels mainly include flexible base plate (Flexible substrate), buffer layer
(buffer layer), thin film transistor (TFT) (Thin Film Transistor, TFT), Organic Light Emitting Diode (Organic
Light Emitting Diode, OLED) and thin-film encapsulation layer (Thin Film Encapsulation).Wherein, film seals
Dress technology is one of its key.This is because after OLED contacts water, oxygen, electrochemical reaction can be generated with it, destroys component internal
Electrode and organic material, cause the dim spot of luminous zone, and reduce component efficiency and service life.
Existing solution is typically to be encapsulated using the film that blocks water, and not only water preventing ability is preferable, and is relatively planarized, and is increased
The reliability of OLED encapsulation.But existing thin-film package is there are storage life deficiency shortcoming, although thin-film package can pass through
Increase pellicle film quantity to improve the encapsulation service life, but be not only substantially improved the integral thickness of film, while can also make in this way
Production cost raising, be unfavorable for volume production.Therefore, it is necessary to provide a kind of thin-film packing structure of storage life length.
Invention content
In view of above-mentioned condition, it is necessary to a kind of thin-film packing structure simple in structure is provided, to solve to deposit in the prior art
The shortcomings that storage service life is insufficient.
The present invention provides a kind of thin-film packing structure, and the thin-film packing structure includes inorganic compounding film layer, described inorganic
Composite film is set to the top of Organic Light Emitting Diode and to cover the Organic Light Emitting Diode, the inorganic substances compound membrane
Layer is alternately stacked and sets for the inorganic mantle layer of different refractivity and inorganic hard membrane layer.
Further, the inorganic mantle layer and the inorganic hard membrane layer are each at least one layer of and be alternately stacked setting.
Further, the inorganic mantle layer and silicon nitride can be respectively adopted for the inorganic hard membrane layer or silica is made.
Further, the inorganic mantle layer uses refractive index to be adopted for silicon nitride, the inorganic hard membrane layer of 1.65-1.8
The silicon nitride for being 1.8-1.9 with refractive index；Alternatively, the inorganic mantle layer use refractive index for 1.25-1.4 silica,
The inorganic hard membrane layer uses silica of the refractive index for 1.4-1.5；Alternatively, the inorganic mantle layer use refractive index for
The silicon nitride of 1.65-1.8, the inorganic hard membrane layer use silica of the refractive index for 1.4-1.5；It is alternatively, described inorganic soft
Film layer uses refractive index to use silicon nitride of the refractive index for 1.8-1.9 for silica, the inorganic hard membrane layer of 1.25-1.4.
Further, the setting sequence of the inorganic compounding film layer from bottom to top is：The first inorganic mantle layer, then it is described
Inorganic hard membrane layer, inorganic mantle layer described later, then the inorganic hard membrane layer, are arranged alternately successively；It is alternatively, first described inorganic hard
Film layer, then the inorganic mantle layer, inorganic hard membrane layer described later, then the inorganic mantle layer, are arranged alternately successively.
Further, the thin-film packing structure further includes organic film, and the organic film is set to described inorganic soft
Between film layer and the inorganic hard membrane layer or it is set to the top of the inorganic compounding film layer.
Further, the thin-film packing structure further includes barrier film layer, and the barrier film layer is set to described inorganic multiple
Close the top of film layer.
Further, the thin-film packing structure further includes organic film and barrier film layer, and the barrier film layer is set to
The top of the inorganic compounding film layer, the organic film be set between the inorganic mantle layer and the inorganic hard membrane layer or
It is set between the inorganic compounding film layer and the barrier film layer.
The present invention also provides a kind of flexible display panels, the flexible display panels include being set to Organic Light Emitting Diode
Top and thin-film packing structure to cover the Organic Light Emitting Diode.
The present invention also provides a kind of thin-film packing structure production method, the step of production method, is：In organic light emission
Above diode by plasma enhanced chemical vapor deposition method distinguish alternating deposit different refractivity inorganic mantle layer and
Inorganic hard membrane layer.
The advantageous effect that the technical solution of the embodiment of the present invention is brought is：Above-mentioned thin-film packing structure, including using different
The inorganic mantle layer of refractive index and inorganic hard membrane layer are alternately stacked the inorganic compounding film layer that forms of setting, inorganic substances compound membrane floor height,
Low stress overlaps mutually and matches with the stress of Organic Light Emitting Diode, and flexibility is moderate, when flexible display panels are bent without
Machine composite film will not rupture, and then realize the storage life for promoting thin-film packing structure.
Description of the drawings
Fig. 1 is the structure diagram of the thin-film packing structure of the embodiment of the present invention.
Fig. 2 is the structure chart of the inorganic compounding film layer of the embodiment of the present invention under the tem.
Fig. 3 is a kind of structure diagram of thin-film packing structure for being provided with organic film of the embodiment of the present invention.
Fig. 4 is the structure diagram that the another kind of the embodiment of the present invention is provided with the thin-film packing structure of organic film,
Fig. 5 is the structure diagram of the thin-film packing structure for being provided with barrier film layer of the embodiment of the present invention.
Specific embodiment
The technological means and effect taken further to illustrate the present invention to reach predetermined goal of the invention, below in conjunction with
Attached drawing and preferred embodiment to specific embodiment, structure, feature and its effect of the present invention, are described in detail as after.
So-called orientation " on " and " under " is only to represent opposite position relation, and for this in the description of the present invention
Position relationship embodied in for the attached drawing of specification.
Fig. 1 is the structure diagram of the thin-film packing structure of the embodiment of the present invention, for convenience of describing, in addition to film in Fig. 1
Thin film transistor (TFT) 20 is further included except encapsulating structure 10 and is set to the Organic Light Emitting Diode of 20 upper center of thin film transistor (TFT)
30.Specifically, shown in Figure 1, thin-film packing structure 10 includes inorganic compounding film layer 11, and inorganic compounding film layer 11, which is located at, to be had
The top of machine light emitting diode 30 and to cover Organic Light Emitting Diode 30.
Inorganic compounding film layer 11 is the inorganic mantle layer 12 of different refractivity and 13 each at least one layer of inorganic hard membrane layer and alternating
Stacking is set.
Silicon nitride (SiNx) can be respectively adopted in inorganic mantle layer 12 and inorganic hard membrane layer 13 or silica is made.Specifically,
It is 1.8-1.9 that the silicon nitride that refractive index is 1.65-1.8 and refractive index, which is respectively adopted, in inorganic mantle layer 12 and inorganic hard membrane layer 13
Silicon nitride；Alternatively, the silica and folding that refractive index is 1.25-1.4 is respectively adopted in inorganic mantle layer 12 and inorganic hard membrane layer 13
Penetrate the silica that rate is 1.4-1.5；Alternatively, inorganic mantle layer 12 uses silicon nitride, inorganic hard of the refractive index for 1.65-1.8
Film layer 13 uses silica of the refractive index for 1.4-1.5；Alternatively, inorganic mantle layer 12 uses oxygen of the refractive index for 1.25-1.4
SiClx, inorganic hard membrane layer 13 use silicon nitride of the refractive index for 1.8-1.9.It should be noted that refractive index is 1.65-1.8
Silicon nitride and refractive index be 1.25-1.4 silica, compactness is poor (laxer), stress about -100Mpa, i.e., relatively
Low stress；The silica that the silicon nitride film layer and refractive index that refractive index is 1.8-1.9 are 1.4-1.5, finer and close, stress is about
150Mpa, i.e., opposite high stress.
Depending on the number of plies of inorganic mantle layer 12 and inorganic hard membrane layer 13 is as needed, inorganic mantle layer 12 and nothing in the accompanying drawings
Machine hard membrane layer 13 is for four layers.Inorganic compounding film layer 11 from bottom to top setting sequence be：First inorganic mantle layer 12, then nothing
Machine hard membrane layer 13, later inorganic mantle layer 12, then inorganic hard membrane layer 13, is arranged alternately successively；Alternatively, first inorganic hard membrane layer 13,
Inorganic mantle layer 12 again, later inorganic hard membrane layer 13, then inorganic mantle layer 12, is arranged alternately successively.Specifically, referring to Fig. 1 institutes
Show, inorganic mantle layer 12 is four layers, including the first inorganic mantle layer 121, the second inorganic mantle layer 123, the inorganic mantle layer of third
125 and the 4th inorganic mantle layer 127.Inorganic hard membrane layer 13 is four layers, including the first inorganic hard membrane layer 132, the second inorganic dura mater
Layer 134, inorganic 136 and the 4th inorganic hard membrane layer 138 of hard membrane layer of third.Inorganic compounding film layer 11 is from bottom to top followed successively by first
Inorganic mantle layer 121, the first inorganic hard membrane layer 132, the second inorganic mantle layer 123, the second inorganic hard membrane layer 134, third are inorganic
The inorganic hard membrane layer 136 of mantle layer 125, third, the 4th inorganic 127 and the 4th inorganic hard membrane layer 138 of mantle layer..
Since inorganic compounding film layer 11 for inorganic mantle layer 12 and inorganic hard membrane layer 13 is alternately stacked setting, i.e., low stress with
High stress overlaps mutually so that the stress of inorganic compounding film layer 11 and the stress of Organic Light Emitting Diode 30 match, when flexibility is aobvious
When showing panel bending, stress can be discharged to the low stress direction of inorganic compounding film layer 11, without leading to inorganic compounding film layer
11 rupture；In addition, the film layer flexibility of the inorganic compounding film layer 11 of the present embodiment is moderate, flexibility is between increase thin-film package
(it is that consistency is very high that ALD technique forms film layer to the film layer and ALD encapsulation technologies of number of plies technology, but on bending angle more
Thin film forming is more bent more has the phenomenon that cracking) film layer flexibility between, flexible display panels be bent when, inorganic compounding film layer
11 are bent without rupturing therewith, and then increase the storage life of thin-film packing structure 10.
Fig. 2 is the structure chart of the inorganic compounding film layer of the embodiment of the present invention under the tem, referring to Fig. 2, in TEM (transmitted electrons
Microscope, also known as transmission electron microscope, English name Transmission Electron Microscope) under show as, inorganic dura mater
Layer 13 (high stresses) reflection is strong, and the reflection of inorganic mantle layer 12 (low stress) is weak, forms light and dark film layer (inorganic substances compound membrane
Layer).
Fig. 3 is a kind of structure diagram of thin-film packing structure for being provided with organic film of the embodiment of the present invention, and Fig. 4 is
The another kind of the embodiment of the present invention is provided with the structure diagram of the thin-film packing structure of organic film, referring to Fig. 3 and Fig. 4 institutes
Show, thin-film packing structure 10 of the invention further includes organic film 14, organic film 14 is set except inorganic compounding film layer 11 is included
Between the inorganic mantle layer 12 and inorganic hard membrane layer 13 of inorganic compounding film layer 11 or it is set to the top of inorganic compounding film layer 11
(Fig. 4 is it for), specifically, organic film 14 may be disposed at the inorganic mantle layer 125 of third of inorganic mantle layer 12 with it is inorganic
Second inorganic mantle layer of (Fig. 3 is by it for) or inorganic mantle layer 12 between second inorganic hard membrane layer 134 of hard membrane layer 13
Between 123 and the first inorganic hard membrane layer 132 of inorganic hard membrane layer 13 or the 4th inorganic mantle layer 127 of inorganic mantle layer 12 with
Between the inorganic hard membrane layer 136 of third of inorganic hard membrane layer 13, but not limited to this.
Fig. 5 is the structure diagram of the thin-film packing structure for being provided with barrier film layer of the embodiment of the present invention, referring to Fig. 5 institutes
Show, thin-film packing structure 10 of the invention further includes barrier film layer 15 except inorganic compounding film layer 11 is included, and barrier film layer 15 is set
In the top of inorganic compounding film layer 11.
It is further appreciated that thin-film packing structure 10 also includes 14 He of organic film simultaneously except inorganic compounding film layer 11 is included
Film layer 15 is obstructed, barrier film layer 15 is set to the top of inorganic compounding film layer 11, and organic film 14 is set to inorganic compounding film layer
Between 11 inorganic mantle layer 12 and inorganic hard membrane layer 13 or be set to inorganic compounding film layer 11 and barrier film layer 15 between (i.e. without
The top of machine composite film 11 obstructs the lower section of film layer 15).
The invention also includes a kind of flexible display panels, flexible display panels include being set to Organic Light Emitting Diode 30
Top and the thin-film packing structure 10 to cover the Organic Light Emitting Diode 30.
In addition, the invention also includes a kind of thin-film packing structure production methods.The thin-film packing structure making side of the present invention
The step of method is：
It is alternately heavy respectively by plasma enhanced chemical vapor deposition method (PECVD) above Organic Light Emitting Diode 30
The product inorganic mantle layer 12 of inorganic compounding film layer 11 of different refractivity and inorganic hard membrane layer 13, wherein, inorganic 13 He of hard membrane layer
The ratio of spacing between inorganic mantle layer 12 and the upper and lower electrode plate (not shown) of equipment is 1：(1.2~2), it is inorganic
The ratio of the power of hard membrane layer 13 and inorganic mantle layer 12 is 1：(1.1~2)；According to specific needs respectively at corresponding position
Make organic film 14 and/or barrier film layer 15.
The production method of inorganic compounding film layer 11 is different from existing silicon nitride film layer manufacturing method thereof, with cardinal temperature
It is low, deposition rate is fast, quality of forming film is good, pin hole is less, is not easily cracked, height stress alternation.
The advantageous effect that the technical solution of the embodiment of the present invention is brought is：Above-mentioned thin-film packing structure 10, including using not
Inorganic mantle layer 12 and inorganic hard membrane layer 13 with refractive index are alternately stacked the inorganic compounding film layer 11 that forms of setting, inorganic compounding
11 high and low stress of film layer overlaps mutually and matches with the stress of Organic Light Emitting Diode 30, and flexibility is moderate, when Flexible Displays face
Inorganic compounding film layer 11 will not rupture during plate benging, and then realize the storage life for promoting thin-film packing structure 10.
The above description is merely a specific embodiment, but protection scope of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in change or replacement, should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of thin-film packing structure (10), it is characterised in that：The thin-film packing structure (10) includes inorganic compounding film layer
(11), the inorganic compounding film layer (11) is set to the top of Organic Light Emitting Diode (30) and to cover the organic light emission
Diode (30), the inorganic compounding film layer (11) are handed over for the inorganic mantle layer (12) of different refractivity and inorganic hard membrane layer (13)
It is set for stacking.
2. thin-film packing structure (10) as described in claim 1, it is characterised in that：The inorganic mantle layer (12) and the nothing
Machine hard membrane layer (13) is each at least one layer of and is alternately stacked setting.
3. thin-film packing structure (10) as claimed in claim 2, it is characterised in that：The inorganic mantle layer (12) and the nothing
Silicon nitride can be respectively adopted for machine hard membrane layer (13) or silica is made.
4. thin-film packing structure (10) as claimed in claim 3, it is characterised in that：The inorganic mantle layer (12) is using refraction
Silicon nitride that rate is 1.65-1.8, the inorganic hard membrane layer (13) use silicon nitride of the refractive index for 1.8-1.9；Alternatively, institute
State inorganic mantle layer (12) use refractive index for the silica of 1.25-1.4, the inorganic hard membrane layer (13) use refractive index for
The silica of 1.4-1.5；Alternatively, the inorganic mantle layer (12) uses silicon nitride of the refractive index for 1.65-1.8, the nothing
Machine hard membrane layer (13) uses silica of the refractive index for 1.4-1.5；Alternatively, the inorganic mantle layer (12) use refractive index for
The silica of 1.25-1.4, the inorganic hard membrane layer (13) use silicon nitride of the refractive index for 1.8-1.9.
5. thin-film packing structure (10) as claimed in claim 1 or 2, it is characterised in that：The inorganic compounding film layer (11) by
It is lower and on setting sequence be：The first inorganic mantle layer (12), then the inorganic hard membrane layer (13), inorganic mantle described later
Layer (12), then the inorganic hard membrane layer (13), are arranged alternately successively；Alternatively, the first inorganic hard membrane layer (13), then described inorganic
Mantle layer (12), inorganic hard membrane layer (13) described later, then the inorganic mantle layer (12), are arranged alternately successively.
6. thin-film packing structure (10) as described in claim 1, it is characterised in that：The thin-film packing structure (10) further includes
Organic film (14), the organic film (14) are set between the inorganic mantle layer (12) and the inorganic hard membrane layer (13)
Or it is set to the top of the inorganic compounding film layer (11).
7. thin-film packing structure (10) as described in claim 1, it is characterised in that：The thin-film packing structure (10) further includes
Film layer (15) is obstructed, the barrier film layer (15) is set to the top of the inorganic compounding film layer (11).
8. thin-film packing structure (10) as described in claim 1, it is characterised in that：The thin-film packing structure (10) further includes
Organic film (14) and barrier film layer (15), the barrier film layer (15) are set to the top of the inorganic compounding film layer (11),
The organic film (14) is set between the inorganic mantle layer (12) and the inorganic hard membrane layer (13) or is set to described
Between inorganic compounding film layer (11) and the barrier film layer (15).
9. a kind of flexible display panels, it is characterised in that：The flexible display panels include being set to Organic Light Emitting Diode
(30) top and to cover the thin-film packing structure of the Organic Light Emitting Diode (30) (10).
10. a kind of thin-film packing structure production method, it is characterised in that：The step of production method is：In organic light emission two
The inorganic mantle layer of alternating deposit different refractivity is distinguished above pole pipe (30) by plasma enhanced chemical vapor deposition method
(12) and inorganic hard membrane layer (13).
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Application publication date: 20180710 |