CN109216408A - OLED display panel and preparation method thereof - Google Patents
OLED display panel and preparation method thereof Download PDFInfo
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- CN109216408A CN109216408A CN201710526519.7A CN201710526519A CN109216408A CN 109216408 A CN109216408 A CN 109216408A CN 201710526519 A CN201710526519 A CN 201710526519A CN 109216408 A CN109216408 A CN 109216408A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of OLED display panels and preparation method thereof.Multiple recess are provided with by laser boring mode in the OLED display panel, thin-film encapsulation layer filling recess is set to form anchoring structure, adhesive capacity between thin-film encapsulation layer and top electrode is effectively enhanced using the anchoring structure, the anti-shearing force that OLED display panel can be improved, be reduced or avoided between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of OLED display panel and preparation method thereof.
Background technique
In recent years, as a kind of new flat-panel monitor, display of organic electroluminescence is received more and more attention.Have
The core component of electroluminescent display is organic electroluminescence device (OLED, also known as Organic Light Emitting Diode).OLED
Principle of luminosity is under certain voltage driving, and electrons and holes are injected into electron transfer layer from cathode and anode respectively and hole passes
Defeated layer, electrons and holes pass through electron transfer layer respectively and hole transmission layer moves to luminescent layer, and meet in luminescent layer, shape
At exciton and light emitting molecule is excited, visible light is issued by radiative relaxation.
The characteristics of OLED display panel is frivolous, wide viewing angle, low in energy consumption, fast response time, achievable Flexible Displays etc..By
It is active illuminant device in it, very big advantage is considered to have in terms of showing high-resolution high speed video, and recently
Just develop towards practical direction within several years.However, due to the luminescent layer for playing light-emitting function in OLED display panel, to steam and
The external environmental factors such as oxygen are very sensitive, if OLED display panel is exposed in the environment of steam or oxygen, meeting
So that device performance sharply declines or damage completely.In order to improve the service life of OLED and the stability of device, need to lead to
Good encapsulation is crossed to completely cut off the steam and oxygen of surrounding.
Traditional glass cover-plate or metal cover board encapsulation have been carried out preferable effect, but are not fully appropriate for some heavy
It wants or potential application, such as top emitting OLED display technology, flexibility OLED display technology or flexibility OPV etc..Thus
Industry develops thin film encapsulation technology, using one or more layers thin-film barrier water oxygen, the not path of shielding light outgoing or incidence,
The flexible of substrate is not influenced.But inventor is the study found that the adhesion strength between thin-film encapsulation layer and cathode is weaker, especially
In flexible display panels bending process, even occur between thin-film encapsulation layer and cathode and inside functional layer between each film layer
The phenomenon that curling, cracking, leads to the ability decline for obstructing water oxygen, affects the performance of luminescent layer, and then affect OLED and show
The service life of panel and performance.
Summary of the invention
It is an object of the present invention to solve in OLED display panel between thin-film encapsulation layer and cathode and inside functional layer
Occur separating between each film layer or the problem of positional shift.
To solve the above-mentioned problems, on the one hand, a kind of OLED display panel is provided, including substrate and is formed in the base
Hearth electrode, pixel defining layer, functional layer, top electrode and thin-film encapsulation layer on plate；The pixel defining layer is formed with several pictures
Element opening, hearth electrode, functional layer and top electrode in the pixel openings constitute pixel unit；The OLED display surface
Several recess formed by laser boring are also formed on the dead space of plate, the thin-film encapsulation layer fills the recess.
Optionally, top electrode and functional layer of the recess above pixel defining layer.
Optionally, the OLED display panel further includes the planarization layer being formed on the substrate, the hearth electrode shape
On planarization layer described in Cheng Yu；After top electrode and functional layer of the recess above pixel defining layer, part is also extended through
The pixel defining layer of thickness, alternatively, described be recessed also extends through the pixel defining layer and segment thickness or all thick of full depth
The planarization layer of degree.
Optionally, the recess is formed at the pixel defining layer at least partly around pixel unit.
Optionally, one or more recess are formed at the pixel defining layer around each pixel unit.
Optionally, it at least partly is formed with boss above pixel defining layer, the recess is at least partly formed at boss.
Optionally, one or more recess are formed at each boss.
Optionally, the shape of the recess is one in cylindrical body, Elliptic Cylinder, rotary table, inverted round stage, cuboid or square
Kind or any combination thereof.
On the other hand, a kind of OLED display panel preparation method is provided, comprising:
One substrate is provided, hearth electrode, pixel defining layer, functional layer, top electrode are formed on the substrate, the pixel is fixed
Adopted layer is formed with several pixel openings, and the hearth electrode, functional layer and top electrode in the pixel openings constitute pixel list
Member；
Several recess are formed on the dead space of OLED display panel by laser boring mode；And
Thin-film encapsulation layer is formed on the substrate, and the thin-film encapsulation layer fills the recess.
Optionally, using light shield shading, and full plate scanning is carried out with laser, smashes target area through the laser of light shield
Film layer is smashed a little to be formed, described to smash a composition recess.
Compared with prior art, the present invention is provided with multiple recess in OLED display panel, fills thin-film encapsulation layer
Recess forms anchoring structure, effectively enhances the adhesive capacity of thin-film encapsulation layer using the anchoring structure, OLED can be improved and show
The anti-shearing force of panel, be reduced or avoided between thin-film encapsulation layer and cathode and functional layer inside separate between each film layer
Or positional shift.
Detailed description of the invention
Fig. 1 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention one；
Fig. 2 a~2f is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 1；
Fig. 3 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention two；
Fig. 4 a~4b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 3；
Fig. 5 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention three；
Fig. 6 a~6b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 5；
Fig. 7 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention four；
Fig. 8 a~8b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 7；
Fig. 9 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention five；
Figure 10 a~10b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 9；
Figure 11 is a kind of schematic top plan view of OLED display panel in the embodiment of the present invention five；
Figure 12 is the schematic top plan view of another OLED display panel in the embodiment of the present invention five；
Figure 13 is the diagrammatic cross-section of another OLED display panel in the embodiment of the present invention five；
Figure 14 is the diagrammatic cross-section of another OLED display panel in the embodiment of the present invention five；
Figure 15 is the distribution schematic diagram being recessed in the embodiment of the present invention six；
Figure 16 is the schematic diagram that laser boring is carried out in the embodiment of the present invention six；
Figure 17 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention seven；
Figure 18 a~18b is the diagrammatic cross-section in OLED display panel preparation process shown in Figure 17；
Figure 19 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention eight；
Figure 20 a~20b is the diagrammatic cross-section in OLED display panel preparation process shown in Figure 19；
Figure 21 is the schematic diagram of the dykes and dams of OLED display panel in the embodiment of the present invention nine；
Numbering in the drawing explanation:
100- substrate；110- hearth electrode；120- pixel defining layer；120 '-holes；130- pixel openings；140- functional layer；
150- top electrode；160- thin-film encapsulation layer；161- the first film encapsulated layer；The second thin-film encapsulation layer of 162-；163- third film
Encapsulated layer；The 4th thin-film encapsulation layer of 164-；The 5th thin-film encapsulation layer of 165-；The 6th thin-film encapsulation layer of 166-；The 7th film of 167-
Encapsulated layer；The 8th thin-film encapsulation layer of 168-；170- recess；The side wall of 170a, 170b- recess；The bottom wall of 170c- recess；180-
Boss；The first dykes and dams of 191-；The second dykes and dams of 192-；200- hard mask layer；200 '-patterned hard mask layers；210- is graphical
Photoresist layer.
Specific embodiment
In the background technology it has been already mentioned that the functional layer in OLED display panel is to external environmental factors such as steam and oxygen
It is very sensitive, if the functional layer in OLED display panel is directly exposed in the environment of steam and oxygen, can make
OLED display panel performance sharply declines or damage completely.Thus, encapsulate most important for OLED device, multi-layer thin
Film, which encapsulates (TFE) technology as a kind of novel OLED encapsulation method, has preferable development prospect.However, inventor studies hair
It is existing, since thin-film encapsulation layer and top electrode adhesion strength below are poor, especially in flexible display panels, tensile stress and pressure
Under the alternating action of stress, cause each inside the separation or positional shift and OLED functional layer of thin-film encapsulation layer and lower section film layer
Separation or positional shift occur between film layer, to cause the premature failure of encapsulation, shortens the service life of display device.
Based on the studies above, the embodiment of the present invention is provided with multiple recess on the dead space of OLED display panel, and makes
The thin-film encapsulation layer filling recess forms anchoring structure, effectively enhances the adhesion energy of thin-film encapsulation layer using the anchoring structure
Power can be improved the anti-shearing force of OLED display panel, be reduced or avoided between thin-film encapsulation layer and cathode and inside functional layer
Occur separating between each film layer or positional shift phenomenon, it is ensured that packaging effect improves the reliability of OLED display panel.
Specifically, the embodiment of the present invention provides a kind of OLED display panel, including substrate and it is formed on the substrate
Hearth electrode, pixel defining layer, functional layer, top electrode and thin-film encapsulation layer.The pixel defining layer is formed with several pixels and opens
Mouthful, hearth electrode, functional layer and top electrode in several pixel openings constitute several pixel units.The OLED is aobvious
Show and be also formed with several recess formed by laser boring mode on the dead space of panel, described in the thin-film encapsulation layer filling
Recess.
Wherein, top electrode and functional layer of the recess above pixel defining layer.Further, the OLED is shown
Panel further includes the planarization layer being formed on the substrate, and the hearth electrode is formed on the planarization layer；The recess
After top electrode and functional layer above pixel defining layer, the pixel defining layer of segment thickness is also extended through, alternatively, described recessed
Fall into after the top electrode above the pixel defining layer and functional layer, it is described be recessed also extend through the pixel defining layer of full depth with
And the planarization layer of segment thickness or full depth.
Wherein, the recess may be uniformly distributed on the dead space of the OLED display panel, can also be heterogeneous
It is distributed on the dead space of the OLED display panel.
Wherein, the recess is formed at the pixel defining layer at least partly around pixel unit.
Wherein, one or more recess are formed at the pixel defining layer around each pixel unit.
Wherein, it at least partly is formed with boss above pixel defining layer, the recess is at least partly formed at boss, often
One or more recess are formed at a boss.
Wherein, the shape of the recess is a kind of in cylindrical body, Elliptic Cylinder, rotary table, inverted round stage, cuboid or square
Or any combination thereof.
The embodiment of the present invention also provides a kind of OLED display panel preparation method, comprising:
One substrate is provided, is formed with hearth electrode, pixel defining layer, functional layer, top electrode, the pixel on the substrate
Definition layer is formed with several pixel openings, and the hearth electrode, functional layer and top electrode in the pixel openings constitute pixel
Unit；
Several recess are formed on the dead space of OLED display panel by laser boring mode；And
Thin-film encapsulation layer is formed on the substrate, and the thin-film encapsulation layer fills the recess.
It is aobvious to OLED display panel proposed by the present invention and its packaging method, OLED below in conjunction with the drawings and specific embodiments
Showing device is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.
It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, bright
The purpose of the embodiment of the present invention is aided in illustrating clearly.Wherein, be for the sake of clarity exaggerated layer, film, panel, region thickness
Degree.Also, in order to illustrate more clearly of the present invention, the component for being not directed to explanation is omitted from attached drawing, and identical appended drawing reference
Same parts are indicated in the text.
It should be understood that it can be straight when the element of such as layer, film, region or substrate is referred to as at another element "upper"
It connects on another element, or insertion element also may be present.In contrast, when element is referred to as " direct " in another element
Insertion element is not present in "upper".
Embodiment one
Fig. 1 is the diagrammatic cross-section of OLED display panel in the present embodiment.As shown in Figure 1, the OLED display panel includes
Substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel defining layer
120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
The substrate material of substrate 100 can be quartz, glass, metal, resin etc., wherein resin substrates include but unlimited
In polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PBN), gather
Carbonate resin.Flexible substrate is then preferably used for flexible display apparatus, such as polyimides (PI) substrate.In addition, base
Plate 100 is preferably provided with the good barrier property for water and gas, should simultaneously for substrate for the device of bottom emission type
It is also equipped with the good transparency, i.e., the light-transmissive substrate in visible wavelength range.
Hearth electrode 110 is formed on substrate 100, such as respectively as red pixel cell, green pixel cell and blue
The anode of pixel unit.Hearth electrode material composition may include such as chromium (Cr), golden (Au), platinum (Pt), nickel (Ni), copper (Cu),
The simple substance or alloy of the metallic element of tungsten (W), aluminium (Al) and silver (Ag) etc..Selected metallic element may come from above
It enumerates, but be not limited to that range above.Hearth electrode 110 can also be formed by the sull of electrically conducting transparent, such as by
Indium tin oxide (ITO), indium-zinc oxide (InZnO), transparent conductive film composed by zinc oxide (ZnO).
Pixel defining layer 120 is used to define the shapes and sizes of luminous zone (pixel region).In the present embodiment, the pixel is fixed
Adopted layer 120 is single layer structure, is formed by polyimides (PI) preparation.When it is implemented, the pixel defining layer 120 may be
Laminated construction, for example, pixel defining layer 120 preferably includes two separate layers, each separation when preparing functional layer using solwution method
Layer is all made of organic material preparation, such as is made of one layer of lyophily material and one layer of lyophobicity organic material, and lyophobicity has
Machine material is located at upper layer, such structure design, can not only make full use of dredging for lyophobicity organic material in pixel defining layer
Liquid effect guidance dripping drops accurately flow into pixel region, avoid and alter color and short circuit between pixel, while being in pixel definition
The lyophily organic material of layer bottom and the good wellability for the liquid for forming hole injection layer can be effectively ensured liquid and sprawl
Form good hole injection layer film.
Pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED display panel include luminous zone and
Non-light-emitting area, the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and non-light-emitting area, and pixel openings 130 are corresponding
Region is luminous zone, and the region outside pixel openings 130 is non-light-emitting area.Pixel defining layer 120 is usually fenestral fabric.Function
Layer 140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, so
And be only that 130 corresponding part of pixel openings shines, constitute luminous zone.Preferably, pixel defining layer 120 close to substrate 100 one
It holds the cross-sectional width (aperture) of (bottom end) to be greater than the cross-sectional width of its one end (top) far from substrate 100, can guarantee in this way
The top electrode 150 being subsequently formed continuously is covered on the side wall of pixel defining layer 120, that is, guarantees the continuity of cathode.This reality
It applies in example, pixel defining layer 120 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction and is
Trapezoid, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that in specific implementation,
The longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example, the longitudinal section of the pixel defining layer 120 can also be with
It is the acclive shape of tool other than trapezoid, the angle between the side wall and bottom wall of the pixel defining layer 120 is, for example, 30
Between~80 degree, that is, it is excessive and influence the vapor deposition of top electrode to can avoid the gradient, and it is too small and make pixel defining layer to can avoid the gradient
Occupy excessive area.
Functional layer 140 can have multilayered structure, in addition to guaranteeing that organic light emitting display panel normal luminous display institute is required
Luminescent layer except, based on the considerations of product cost and light emission luminance and luminous efficiency, those skilled in the art are according to reality
Other film layers are optionally arranged in product demand, for example, further including electron transfer layer and the sky for balance electronic and hole
Cave transport layer, and injected electrons implanted layer and hole injection layer for enhancing electrons and holes.It is main on usual substrate 100
If forming red pixel cell, green pixel cell and blue pixel cells, each pixel unit respectively includes sequentially stratum
Folded hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on the substrate 100.Wherein, it sends out
Photosphere is set in pixel openings 130, and other film layer (hole injection layer, hole transmission layer, electron transfer layer and electronics notes
Enter layer) it can choose and be patterned, also it can choose without patterning process, but prepared by entire film layer, with
Save exposure mask cost, simplification of flowsheet.
Wherein, hole injection layer is used to improve the injectability in hole and has and repairs to hearth electrode (anode) surface
It is decorated with and plays the role of buffer layer.The thickness of hole injection layer can be 5nm~100nm, and preferably with a thickness of 8nm~
50nm.The thickness of hole transmission layer depends on the overall structure of device, but it is preferably with a thickness of 10nm~200nm, more excellent
Choosing is 15nm~150nm.The example for forming the polymer material of hole transmission layer includes the luminous material for dissolving in organic solvent
Material, such as polyvinylcarbazole and its derivative, polyfluorene and its derivative, Polyaniline and its derivative, polysilane and its derivative,
Polyoxy silane derivative, polythiophene and its derivative and polypyrrole and its derivative in main chain or side chain with arylamine structure
Deng.Hole transmission layer can be derived from range as above, and however, it is not limited to this.Luminescent layer is hole and electronics under electric field action
It is compound to generate exciton and luminous region.The thickness of luminescent layer depends on needed for the overall performance of device, but its preferred thickness
It is more preferably 15nm~100nm for 10nm~200nm.Form red light emitting layer, green light emitting layer and blue light-emitting layer
Material can be small molecule material and be also possible to high molecular material.For small molecule systems, luminescent layer both can be using steaming
Prepared by plating mode can also be prepared using solwution method, and for solwution method, small molecule is usually to be used as object, such as be entrained in polymerization
Mode in owner's body shines.And polymer is typically prepared using solwution method due to self character.Light emitting polymer
Example includes that polyfluorene and its derivative, poly (phenylenevinylene) derivative, polyphenylene derivatives, polyvinylcarbazole are derivative
Object, the confused derivative of poly- thiophene；The example of small molecule emitter material includes perylene pigment, cumarin pigment, rhodamine pigment, glimmering
Light plain color element, diene or polyenoid analog derivative etc..In addition, being obtained by the way that electroluminescent organic material to be entrained in aforementioned polymer
The material obtained, for example, passing through doping rubrene, perylene, tetraphenylbutadiene, Nile red and cumarin substance obtained
Also within the scope of such luminescent material.It should be understood that it is merely given as luminescent material example above, but its range of choice is not limited to
In range above, can from it is existing disclose or commercialized material ranges in select.Electron transfer layer is luminous for improving
The electron-transport efficiency of unit.Electron transfer layer preferably also has the ability for stopping hole.Electron transfer layer quilt in the present embodiment
The top that red light emitting layer, green light emitting layer and blue light-emitting layer is arranged in is deposited as common layer.Constitute electron transfer layer
Material example include but is not limited to quinoline, perylene, phenanthroline, double styrene, pyrimidine, triazole, oxazole, fullerene,
Oxadiazoles and Fluorenone or their derivative or metal complex.Electron injecting layer is for improving what electronics was injected from cathode
Efficiency is arranged between electron transfer layer and cathode.Electron injecting layer composition material example includes the oxide (Li of lithium2O), lithium
Fluoride (LiF), caesium composite oxides (Cs2CO3) and oxide/composite oxides mixture.Electron injecting layer
Material be not limited to previous materials.The composition material of electron injecting layer further includes the alkaline-earth metal of such as calcium and barium, such as lithium
Oxide/combined oxidation of the metal (such as indium and magnesium) as the above metallic element with the alkali metal of caesium, with low work function
Object/fluoride.It should be understood that be merely given as functional layer example above, but its range of choice is not limited to the above citing, can be with
From it is existing disclose or commercialized material ranges in select.
Top electrode 150 is made of conductive film, thickness can between 5nm~1000nm, preferably 10nm~
150nm.Top electrode material include aluminium (Al), magnesium (Mg), calcium (Ca), sodium (Na), golden (Au), silver-colored (Ag), copper (Cu), chromium (Cr),
Platinum (Pt), nickel (Ni) and their alloy.Top electrode 150 can also be by the simple substance or alloy or oxide of aforesaid metal elements
Manufactured film is formed, such as indium tin oxide (ITO), indium-zinc oxide (InZnO), zinc oxide (ZnO) conductive film.
Thin-film encapsulation layer 160 is located at the upper of the top electrode of red pixel cell, green pixel cell and blue pixel cells
Side, thin-film encapsulation layer 160 can be one layer perhaps multilayered structure using material can be organic film or inorganic film, or
Person is the laminated construction of organic film and inorganic film.The thickness of thin-film encapsulation layer 160, can preferably between 200nm~20 μm
It is adjusted according to the material of preparation thin-film encapsulation layer and technique and actual needs.The top surface of thin-film encapsulation layer 160 is (separate
The surface of substrate 100) it can be flat (as shown in Figure 1), certainly, the top surface of thin-film encapsulation layer 160 is also possible to have one
Grade, can by adjusting organic film thickness so as to adjust thin-film encapsulation layer top surface flatness.
Inventor is the study found that organic material is mainly the advantages of preparing thin-film encapsulation layer: 1, flatness is preferable, Ke Yishi
Now planarization (is recessed) present on filling substrate, and it is heavy subsequently through such as chemical vapor deposition (CVD), physical vapor to be conducive to
The method of product (PVD) or atomic layer deposition (ALD) grows inorganic film；2, it can prepare that thickness is biggish to be had by prior art
Machine material；3, the bend resistance better performances of organic material.However, the water and oxygen barrier property of organic material is not so good as inorganic material.
Common organic material is mainly polymethyl methacrylate (PMMA) in OLED display panel preparation process, and PMMA is commonly called as Ya Ke
Power or organic glass.Generally use the organic material in flash distillation hair and InkJet printing processes preparation thin-film encapsulation layer.Inorganic material
The major advantage of material is that water and oxygen barrier property is good compared with organic material, but its bend resistance ability for organic material is poor,
And it is not easy to prepare the biggish inorganic film of thickness in actual process.The inorganic material preferably used in thin-film package are as follows: silica
(SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2).Wherein, the refractive index of silicon nitride and aluminium oxide is (fine and close
Property) it is better than silica and titanium oxide, so the water and oxygen barrier property of silicon nitride and aluminium oxide is better than silica and titanium oxide.But
It is that silica and the binding force of other film layers are preferable, and buckle resistance can be preferably.Based on the above research, thin-film package is preferably adopted
The mode combined with organic material and inorganic material, for example inorganic material/organic material/inorganic material laminated construction is used,
Specifically, following several combinations: silicon nitride/organic material/silicon nitride can be used；Aluminium oxide+silicon nitride/organic material
Material/silicon nitride+aluminium oxide；Silica+silicon nitride/organic material/silicon nitride+silica.It is of course also possible to use several layers of inorganic
The mode of material laminate, for example, aluminium oxide+titanium oxide/aluminium oxide+titanium oxide/aluminium oxide+titanium oxide/aluminium oxide+titanium oxide,
It is made of the lamination of four aluminium oxide and titanium oxide, the water oxygen barriering effect of this combination is preferable, simultaneously as every layer
The thinner thickness of inorganic material, still can be with into flexible display apparatus.
Inventor also found, although thin-film encapsulation layer 160 can completely cut off the steam and oxygen of surrounding, avoid functional layer 140
It is exposed in the environment of steam or oxygen, still, since adhesion strength is weaker between thin-film encapsulation layer 160 and functional layer 140,
Especially when OLED display panel needs often bending, between thin-film encapsulation layer 160 and top electrode 150, the inside of functional layer 140 it is each
Separation or shifting phenomena are easy to happen between organic film, the anti-shear ability of OLED display panel is poor, causes to obstruct water oxygen
Ability decline.Based on this, in the present embodiment, through the recess 170 of the pixel defining layer 120, (emphasis refers to Fig. 2 e for formation
With Fig. 2 f), the recess 170 is formed in the pixel defining layer 120, can through the pixel defining layer 120 to
The film layer (such as planarization layer) for exposing 120 lower section of pixel defining layer, the pixel for being also possible to only through part thickness are fixed
Adopted layer 120 may also be through the planarization layer that segment thickness is also extended downwardly through after the pixel defining layer 120, more
The planarization layer that full depth is also extended downwardly through after the pixel defining layer 120 be can be to expose planarization
The depth of the film layer (such as passivation layer) of layer lower section, the recess 170 can adjust accordingly according to actual needs.In addition,
If corresponding to the dead space in product below the pixel defining layer, which even can continue to extend downwardly, as long as not
Influence OLED display function.Also, the present invention is not intended to limit the width (along the size for being parallel to orientation substrate) of the recess,
Under the premise of the recess does not influence the original function of pixel defining layer, the width that can be recessed with appropriate adjustment.
In conjunction with shown in Fig. 2 e and Fig. 2 f, in the present embodiment, it is described recess 170 be vertical hole, that is, be recessed 170 side wall
The bottom wall 170c of 170a, 170b perpendicular to recess 170.The study found that functional layer can be reduced or avoided using vertical hole
140 and attachment of the top electrode 150 on side wall 170a, 170b, that is, make functional layer 140 and top electrode 150 mainly covering recess
170 bottom wall, without cover or reduce be covered on recess 170 side wall, in this way, it is subsequent be filled in recess 170 in encapsulation
Film layer 160 can be directly in conjunction with the side wall of recess 170, and adhesion strength is preferable, and anti-shearing ability is more preferably under such structure.
It is understood that in actual production, the true form (and size) and design shape (and size) of various products
Between allow that there are certain deviations.Generally, if what the true form (and size) of product allowed in design shape (and size)
In deviation range, requirement can be reached.For example, the side wall of the recess 170 can be straight wall, the straight wall and bottom wall
Angle is 90 degree or close to 90 degree；The side wall of the recess 170 is also possible to the arcwall with some radians, when side wall is arc
The angle of its tangent line and bottom wall is 90 degree or close to 90 degree when shape wall.
In addition, in the present embodiment, in OLED display panel in all areas, the pixel defining layer of corresponding each pixel unit
In be each formed with recess, these recess are annularly distributed and surround each pixel unit.It is to be understood that can also need not be in substrate
The pixel defining layer of 100 all areas is respectively formed on recess, for example, for folding flexible display panels, it can be only
Recess is formed in the pixel defining layer for folding position, because region bending probability is big, relative to the region seldom bent
Speech is easier between the thin-film encapsulation layer and cathode at the folding position and between each film layer to separate inside functional layer, institute
To form recess preferably in the pixel defining layer in this region.In another aspect, the size and shape of the recess on each region can
With identical, can also but size identical with shape it is not exactly the same or shape and size are all different.In fact, only
Recess is formd, is filled in order to subsequent packaging film and forms anchoring structure into recess, that is, OLED display panel can be improved
Anti-shear ability.
The production process of OLED display panel as above is discussed in detail below with reference to Fig. 1 and Fig. 2 a~2f.
Firstly, a substrate 100 is provided, well known driving circuit can be formed on the substrate 100 in conjunction with shown in Fig. 2 a,
Wherein the drain electrode of the driving transistor of driving circuit is electrically connected by the hearth electrode 110 of via hole and OLED.The tool of driving circuit
Body structure and forming method are content known to art technology, are not discussed in detail herein.It can also shape on the substrate 100
At there is passivation layer, to the driving circuit on protective substrate.The passivation layer is preferably inorganic material, e.g. silicon nitride, oxygen
SiClx, aluminium oxide etc., it should be appreciated that be merely given as passivation layer example above, but its range of choice is not limited to the above act
Example, can from it is existing disclose or commercialized material ranges in select.
Then, it with continued reference to shown in Fig. 2 a, forming conductive film on the substrate 100, and by the conductive film pattern, protects
The conductive film for staying pixel region (luminous zone), forms multiple hearth electrodes 110, multiple hearth electrodes 110 respectively with different pixels unit
Driving transistor drain electrode be connected.It should be understood that the hearth electrode preferably uses electrically conducting transparent for bottom emitting device
Film such as ITO is made, and for top emitting device, the hearth electrode is then made without transparent conductive film.It is excellent
Choosing, it is formed before hearth electrode 110, the method for first passing through such as spin coating prepares one layer of polymeric film on hearth electrode 110, from
And form planarization layer.
Followed by preparing one layer of polymeric on hearth electrode 110 for example, by the method for spin coating with continued reference to shown in Fig. 2 a
Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer
120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is light
When sensitive polymer) or the method that passes through exposure development and dry etching (when the polymer is non-photosensitive polymers)
The thin polymer film is graphical, to form several pixel openings 130.The pixel defining layer 120 can be single layer structure,
It is also possible to the laminated construction being made of multiple separation layer stackups.For by multiple pixel defining layers for constituting of separation layer stackups
Patterning process can be optimized for defining after layer film all formed in all pixels, using a patterning processes, for example expose
Developing process and/or dry carving technology more save cost in this way.In the present embodiment, the pixel defining layer 120 is using latticed
(lattice-shaped) structure, pixel openings 130 defined by pixel defining layer 120 are, for example, square aperture.
Next, forming recess 170 in pixel defining layer 120, it can specifically include following steps:
With reference to shown in Fig. 2 b, for example, by chemical vapor deposition (CVD) or the method for physical vapour deposition (PVD) (PVD) described
A hard mask layer (hard mask) 200 is formed on hearth electrode 110 and pixel defining layer 120.The hard mask layer 200 is preferably
Inorganic material, this is because the organic material etching selection ratio with higher of inorganic material and formation pixel defining layer 120, it can
In order to which graphical pixel defining layer 120 so that form recess 170 wherein.Specifically, the material example of the hard mask layer 200
Silicon nitride, silica, aluminium oxide in this way etc., it should be appreciated that be merely given as hard mask layer example above, but its range of choice is simultaneously
Be not limited to the above citing, can from it is existing disclose or commercialized material ranges in select, as long as and pixel definition
The material etching selection ratio with higher of layer can be used as the hard mask layer so as to form recess.
With reference to shown in Fig. 2 c, one layer of photoresist layer is prepared on hard mask layer 200 for example, by the method for spin coating, and pass through exposure
The method of photodevelopment is graphical by the photoresist layer, and patterned photoresist layer 210 covers the part area of 200 top surface of hard mask layer
Domain and side whole region have photoresist opening at the predetermined position for forming recess, and exposure is not covered by pixel defining layer
The hard mask layer 200 of lid；
It is exposure mask with patterned photoresist layer 210 with reference to shown in Fig. 2 d, the hard mask layer 200 is etched, to form figure
The hard mask layer 200 ' of shape, the patterned hard mask layer 200 ' cover the partial region of 120 top surface of pixel defining layer with
And the whole region of side, there is hard mask layer opening at the predetermined position for forming recess.
With reference to shown in Fig. 2 e, exposure mask is made jointly with patterned photoresist layer 210 and patterned hard mask layer 200 ', is etched
The pixel defining layer 120, to form recess 170.During etching pixel defining layer 120, patterned photoresist layer
The step of 210 are synchronized to consume, and can save removal photoresist can also remove surplus certainly separately through techniques such as plasma ashings
Remaining photoresist.The etching technics is, for example, dry etch process, and specific etch process parameters can be according to recess to be formed
The needs such as depth be adaptively adjusted, details are not described herein.In the present embodiment, it is described recess 170 through pixel defining layer 120 from
And expose the film layer of 120 lower section of pixel defining layer.When it is implemented, the recess 170 is also possible to only through part thickness
Pixel defining layer 120, do not expose the film layer of the lower section of pixel defining layer 120.Alternatively, the recess 170 can be through institute
The planarization layer for also extending downwardly through segment thickness after pixel defining layer 120 is stated, is also possible to through the pixel defining layer
Entire planarization layer is extended downwardly through after 120 also to expose the film layer (such as passivation layer) below planarization layer.
In above-mentioned introduction, be initially formed pixel defining layer 120, after in pixel defining layer 120 formed recess 170, this be because
For the pattern of pixel defining layer 120 is different from the pattern of recess 170 in the present embodiment, and pixel defining layer 120 is trapezoid structure
(have the gradient), recess 170 are vertical through hole (recessed side walls are perpendicular to recess bottom wall), the shape simultaneously in a patterning process
Difficulty above two pattern is larger, so selection is by the way of multiple patterning process.However, it should be recognized that such as
Fruit pixel defining layer 120 is identical with the pattern of recess 170 or close to identical, for example is trapezoid structure or is vertical junction
Structure, then a patterning processes can be used, such as exposure development technique and/or dry carving technology, can save in this way exposure mask at
This, simplification of flowsheet.
It with reference to shown in Fig. 2 f, is formed after recess 170 in pixel defining layer 120, sequentially forms functional layer 140 and top
Electrode 150.At pixel openings 130, the functional layer 140 covers the hearth electrode 110, and the top electrode 150 covers described
Functional layer 140, the hearth electrode 110 of stacked above one another, functional layer 140 and top electrode 150 constitute pixel unit at pixel openings.?
At pixel defining layer 120, the functional layer 140 covers patterned hard mask layer 200 ' in pixel defining layer 120 and recessed
170 bottom is fallen into, the cathode 150 covers the functional layer 140.The recess 170 as described in the present embodiment is vertical through hole,
So, functional layer 140 and top electrode 150 are not easy on the side wall for being attached to recess 170, are conducive to the planarization being subsequently formed
Layer is contacted with the side wall of pixel defining layer 120, to improve adhesion strength.
Wherein, functional layer 140 is for example including hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electronics
Implanted layer.Functional layer can be formed in the region separated by pixel defining layer 120 above-mentioned or the shape together in all areas
At functional layer.Specifically, such as by the method for ink-jet by the material comprising forming hole injection layer, such as polyaniline, polythiophene
Deng solution or other dispersions be sprayed in the exposure of hearth electrode 110.Then, it is formed by heat treatment (drying process)
Hole injection layer, the atmosphere and temperature of drying process are determined according to the characteristic requirements of hole-injecting material used.Hole passes
Defeated layer is prepared on hole injection layer above-mentioned, and preparation method is similar with hole injection layer.Red light emitting layer and green emitting
Layer is prepared by the method for coating in the upper surface of hole transmission layer.Organic solvent is removed thereafter by the mode of heat treatment to obtain
One film.Blue light-emitting layer then determines preparation method according to the material of use or device architecture.For polymer light-emitting material
Material, generally uses solwution method, and the mode such as coated prepares film.It is general to use for small molecule blue emitting material
The mode sedimentation preparation of film of vapor deposition, can be only located in blue emitting pixel unit, can also be used as common layer positioned at whole
Above the hole transmission layer of a red light emitting layer, green light emitting layer and blue emitting pixel unit, this depends on device architecture institute
It needs.After luminescent layer formation, electron-transport made of previous materials can be formed above whole region by way of vapor deposition
Layer, electron injecting layer and top electrode.Wherein, luminescent layer is set in pixel openings 130 only to constitute picture at pixel openings
Plain unit, and other film layers (hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer) can choose progress
Graphically, it also can choose without patterning process, but prepared by entire film layer, to save exposure mask cost, simplification
Process flow.For simplicity, functional layer is schematically represented only with one layer of continuous film layer in figure, it should be appreciated that the function
Layer can be laminated construction, and luminescent layer at least within is patterned.
After forming top electrode 150, refering to what is shown in Fig. 1, being formed by the mode that mode or inkjet printing is such as deposited
Thin-film encapsulation layer 160.Due to being formed with recess 170 in pixel defining layer 120, thin-film encapsulation layer 160 fills the recess
170, and the top electrode 150 is covered, so, constituted if the thin-film encapsulation layer 160 being filled in recess 170 is equivalent to
Dry anchoring structure effectively enhances the anti-shearing force of OLED display panel, can avoid between thin-film encapsulation layer and top electrode and
It is separated between each film layer inside functional layer.
Specifically, the thin-film encapsulation layer 160 includes four-layer structure, respectively the first film encapsulated layer 161, the second film
Encapsulated layer 162, third thin-film encapsulation layer 163 and the 4th thin-film encapsulation layer 164.Specifically, the first film encapsulated layer 161 is filled
The recess 170 simultaneously covers the top electrode 150, and the second thin-film encapsulation layer 162, third thin-film encapsulation layer 163 and the 4th are thin
Film encapsulated layer 164 is sequentially laminated on the first film encapsulated layer 161.Wherein, the second thin-film encapsulation layer 162 and the 4th film
Encapsulated layer 164 can use silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in it is any one
Kind or a variety of combinations.The thickness of each layer can be according to needing to be adjusted in thin-film encapsulation layer 160, and the present invention refuses this
It limits.
To sum up, in the present embodiment, recess, the pixel of the recess at least through part thickness are formed in pixel defining layer
Definition layer, the first film encapsulated layer filling recess in thin-film encapsulation layer are formed anchoring structure, are had using the anchoring structure
Effect enhances adhesive capacity between thin-film encapsulation layer and top electrode, and the anti-shearing force of OLED display panel can be improved, reduce or
Avoid between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift phenomenon.Further
, the recess is vertical hole, is conducive to be contacted by the first film encapsulated layer prepared by organic material with pixel defining layer, organic
Adhesion strength between material is preferable.
Embodiment two
Fig. 3 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention two.As shown in figure 3, the OLED display surface
Plate includes that substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel are fixed
Adopted layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In conjunction with shown in Fig. 4 a and Fig. 4 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED
Display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and Fei Fa
Light area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer
140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, however
It is only that 130 corresponding part of pixel openings shines, constitutes luminous zone.Preferably, pixel defining layer 120 is close to one end of substrate 100
The cross-sectional width of (bottom end) is greater than the cross-sectional width of its one end (top) far from substrate 100, can guarantee to be subsequently formed in this way
Top electrode 150 be continuously covered on the side wall of pixel defining layer 120, that is, guarantee cathode continuity.Specifically, this implementation
In example, pixel defining layer 120 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction in just
It is trapezoidal, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that in specific implementation, institute
The longitudinal section for stating pixel defining layer 120 is also possible to other shapes, for example, the longitudinal section of the pixel defining layer 120 is also possible to
The acclive shape of tool other than trapezoid, the angle between the side wall and bottom wall of the pixel defining layer 120 can be 30~80
Between degree.
In the present embodiment, the cross-sectional width of described 170 one end (bottom end) close to substrate 100 that is recessed is greater than it far from substrate
The cross-sectional width of 100 one end (top).Specifically, described be recessed 170 perpendicular to substrate surface and be parallel to pixel defining layer
The section (longitudinal section) of width direction is in trapezoid, it is preferred that the longitudinal section of the recess 170 is isosceles trapezoid.It is understood that
, in specific implementation, the longitudinal section of the recess 170 is also possible to other shapes, for example, the longitudinal section of the recess 170
The acclive shape of tool being also possible to other than trapezoid, angle between the side wall and bottom wall of the recess 170 can 30~
Between 80 degree.The study found that forming anchoring structure using up-narrow and down-wide recess, anti-shearing ability is more preferably.In addition, practical raw
In production, allow that there are certain deviations between the true form (and size) and design shape (and size) of various products.Generally, only
It wants the true form (and size) of product in the deviation range that design shape (and size) allows, use can be reached and wanted
It asks.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall less than 90 degree, such as 30~80 degree it
Between；The side wall of the recess is also possible to the arcwall with some radians, its tangent line and bottom wall when side wall is arcwall
Angle is less than 90 degree, such as between 30~80 degree.
In the present embodiment, the recess 170 is through the pixel defining layer 120 to expose under pixel defining layer 120
The film layer (such as planarization layer) of side, as shown in fig. 4 a.In specific embodiment, the recess 170 is also possible to only through part
The pixel defining layer 120 of thickness also extends downwardly through segment thickness after may also be through the pixel defining layer 120
Planarization layer, more can be also extended downwardly through after the pixel defining layer 120 planarization layer of full depth from
And the film layer below planarization layer (such as passivation layer) is exposed, the depth of the recess 170 can carry out according to actual needs
Corresponding adjustment.In addition, the recess 170 can even continue if corresponding to the dead space in product below the pixel defining layer
It extends downwardly, as long as not influencing OLED display function.Also, the present invention is not intended to limit the width of the recess (along being parallel to
The size of orientation substrate), under the premise of the recess does not influence the original function of pixel defining layer, it can be recessed with appropriate adjustment
Width.
In the present embodiment, recess, and pixel defining layer are each formed in the pixel defining layer of corresponding each pixel unit
In be respectively formed with a recess.It is to be understood that actually can also need not be in the pixel defining layer of all areas of substrate 100
It is respectively formed recess, for example, can only be formed in the pixel defining layer for folding position for folding flexible display panels
Recess, because region bending probability is big, for the region seldom bent, the thin-film encapsulation layer and yin at the folding position
It is easier between pole and between each film layer to separate inside functional layer, it is advantageous to the shapes in the pixel defining layer in this region
At recess.On the other hand, the size and shape of the recess of each region can be identical, can also be not exactly the same.It is practical
On, as long as foring recess, filled in order to subsequent packaging film and form anchoring structure into recess, that is, OLED can be improved and show
The anti-shear ability of panel.
The production process of OLED display panel as above is introduced below with reference to Fig. 4 a to Fig. 4 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Fig. 4 a, and by the conduction
It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110
Electrode is connected.
Then, with continued reference to shown in Fig. 4 a, it is thin that one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating
Film, and pixel defining layer 120, the pixel defining layer 120 are formed using corresponding patterned way according to the attribute of polymer
The pixel openings 130 corresponding to luminous zone are provided with, also, are formed with recess 170 in the pixel defining layer 120.The picture
The cross-sectional width of the one end of plain definition layer 120 close to substrate 100 is greater than the cross-sectional width of its one end far from substrate 100, accordingly
, pixel openings 130 are less than the cross-sectional width of its one end far from substrate 100 close to the cross-sectional width of one end of substrate 140,
That is, pixel openings 130 are structure wide at the top and narrow at the bottom.It is remote that the cross-sectional width of described 170 one end close to substrate 100 that is recessed is greater than it
The cross-sectional width of one end from substrate 100, that is, recess 170 is up-narrow and down-wide structure.
Same negativity photoresist can be used as exposure mask, formed by double exposure developing process pixel openings 130 and
Recess 170.When exposing for the first time, relatively small light exposure may be selected, so that control forms up-narrow and down-wide pixel defining layer
120 and pixel openings 130 wide at the top and narrow at the bottom；When second of exposure, relatively large light exposure may be selected, to control to be formed
Up-narrow and down-wide recess 170.It should be understood that in the specific implementation, also the formation of adjustable pixel openings 130 and recess 170 is suitable
Sequence, for example, relatively large light exposure may be selected when exposing for the first time, so that control forms up-narrow and down-wide recess 170；The
When re-expose, relatively small light exposure may be selected, so that control forms up-narrow and down-wide pixel defining layer 120 and upper width
Under narrow pixel openings 130.In the present embodiment, selected relatively large light exposure is greater than when exposing for the first time
300mJ/cm2, second of selected relatively small light exposure when exposing is, for example, less than 30mJ/cm2.It should be understood that exposing for the first time
" relatively large light exposure " used by light time refer to it is larger for light exposure used when second exposes, together
Reason, used light exposure when used " relatively small light exposure " refers to relative to first time exposure when exposing for the second time
For it is smaller, not to the restriction of specific value.When practical application, those skilled in the art can content according to the above disclosure with
And the factors such as selected pixel definition layer material and exposure bench are combined, it selects to double expose by the experiment of limited times
The exposure numerical quantity that technique specifically uses, so that the pattern of pixel openings 130 and recess 170 is controlled, it is not specific herein to limit
It is fixed.
It is formed after recess, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electricity
Pole 150, and, thin-film encapsulation layer 160 is formed by way of such as CVD, the thin-film encapsulation layer 160 such as uses inorganic material
Material/organic material/inorganic material laminated construction, specifically, following several combinations: silicon nitride/organic material can be used
Material/silicon nitride；Aluminium oxide+silicon nitride/organic material/silicon nitride+aluminium oxide；Silica+silicon nitride/organic material/silicon nitride+
Silica.
To sum up, in the present embodiment, recess, the pixel of the recess at least through part thickness are formed in pixel defining layer
Definition layer, the first film encapsulated layer filling recess in thin-film encapsulation layer are formed anchoring structure, are had using the anchoring structure
Effect enhances adhesive capacity between thin-film encapsulation layer and top electrode, and the anti-shearing force of OLED display panel can be improved, reduce or
Avoid between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift phenomenon.Further
, the recess is up-narrow and down-wide hole, and the anti-shearing force of the anchoring structure formed in this way is preferable.
Embodiment three
Fig. 5 is the diagrammatic cross-section of OLED display panel in the present embodiment.As shown in figure 5, the OLED display panel includes
Substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel defining layer
120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In conjunction with shown in Fig. 6 a and Fig. 6 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED
Display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and non-luminescent
Area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer 140
It can not only be provided in pixel openings 130 with top electrode 150, also can be set above pixel defining layer 120, however be only
130 corresponding part of pixel openings shines, and constitutes luminous zone.Preferably, pixel defining layer 120 is close to one end (bottom of substrate 100
End) cross-sectional width be greater than its one end (top) far from substrate 100 cross-sectional width, can guarantee the top being subsequently formed in this way
Electrode 150 is continuously covered on the side wall of pixel defining layer 120, that is, guarantees the continuity of cathode.Specifically, the present embodiment
In, pixel defining layer 120 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction in positive ladder
Shape, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that in specific implementation, it is described
The longitudinal section of pixel defining layer 120 is also possible to other shapes, for example, the longitudinal section of the pixel defining layer 120 is also possible to just
The acclive shape of tool other than trapezoidal, the angle between the side wall and bottom wall of the pixel defining layer 120 can be at 30~80 degree
Between.
In the present embodiment, the thin-film encapsulation layer 160 includes three-decker, respectively the first film encapsulated layer 161, second
Thin-film encapsulation layer 162 and third thin-film encapsulation layer 163.Specifically, the first film encapsulated layer 161 covers the top electrode 150,
Second thin-film encapsulation layer 162 and third thin-film encapsulation layer 163 are sequentially laminated on the first film encapsulated layer 161.Wherein,
The first film encapsulated layer 161 and third thin-film encapsulation layer 163 are inorganic film, can use silica (SiO2), silicon nitride
(SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations, e.g. by CVD, PVD or
The mode of ALD is formed.Second thin-film encapsulation layer 162 is organic film, can be made of PMMA, such as pass through inkjet printing mode
It is formed.The thickness of each layer can be according to needing to be adjusted in thin-film encapsulation layer 160, and the present invention not limits this.
In conjunction with shown in Fig. 6 a and Fig. 6 b, in the present embodiment, recess 170 is located at the top of pixel defining layer 120, and through the
One thinner package film layer 161, top electrode 150 and functional layer 140, so that the summit portion region of pixel defining layer 120 is exposed,
In this way, by the fillable recess 170 of the second thinner package film layer 162 of organic material preparation to be connect with pixel defining layer 120
Touching, improves the adhesive force of thin-film encapsulation layer.In specific embodiment, the recess 170 is through the first thinner package film layer 161, top electricity
Behind pole 150 and functional layer 140, the pixel defining layer 120 of segment thickness can also be extended downwardly through, can also be downward
The pixel defining layer 120 of full depth is extended through to expose 120 lower section film layer (such as planarization layer) of pixel defining layer,
It can be the planarization layer that segment thickness is also extended downwardly through after the pixel defining layer 120 of full depth again, it more can be with
The planarization layer of full depth is also extended downwardly through after being through the pixel defining layer 120 of full depth to expose flat
Change the film layer (such as passivation layer) below layer, in addition, this is recessed if corresponding to the dead space in product below the pixel defining layer
Falling into 170 even can continue to extend downwardly, as long as not influencing OLED display function, the depth of the recess 170 can in a word
To adjust accordingly according to actual needs.Also, the present invention is not intended to limit the width of the recess (along being parallel to orientation substrate
Size), under the premise of the recess does not influence the original function of pixel defining layer, the width that can be recessed with appropriate adjustment.
In the present embodiment, cross-sectional width of the recess 170 close to one end (bottom end) of substrate 100 is less than it far from substrate 100
One end (top) cross-sectional width, specifically, the recess 170 perpendicular to substrate surface and is parallel to pixel defining layer width
The section (longitudinal section) in direction is in inverted trapezoidal, it is preferred that the longitudinal section of the recess 170 is isosceles trapezoid.It is understood that
In specific implementation, the longitudinal section of the recess 170 is also possible to other shapes, for example, the longitudinal section of the recess 170 is also possible to
It is greater than the cross-sectional width of its one end (top) far from substrate 100 close to the cross-sectional width of one end (bottom end) of substrate 100, it is described
Recess 170 is perpendicular to substrate surface and is parallel to the section of pixel defining layer width direction in trapezoid.It is understood that real
In the production of border, allow that there are certain deviations between the true form (and size) and design shape (and size) of various products.One
As, as long as the true form (and size) of product is in the deviation range that design shape (and size) allows, can reach makes
With requiring.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall is less than 90 degree, such as 30~80
Between degree；The side wall of the recess is also possible to the arcwall with some radians, its tangent line and bottom when side wall is arcwall
The angle of wall is less than 90 degree, such as between 30~80 degree.
In the present embodiment, recess is each formed in the pixel defining layer of corresponding each pixel unit, and each pixel is fixed
It is each on adopted layer to form multiple recess.It is to be understood that being also possible to respectively form a recess in each pixel defining layer.Actually
It can also need not be respectively formed on recess in the pixel defining layer of all areas of substrate 100, for example, for folding Flexible Displays
For panel, recess can be only formed in the pixel defining layer for folding position, because region bending probability is big, relative to seldom
For the region of bending, it is easier between the thin-film encapsulation layer and cathode at the folding position and inside functional layer between each film layer
It separates, it is advantageous to recess is formed in the pixel defining layer in this region.On the other hand, the size of the recess of each region
Can be identical with shape, it can also be not exactly the same.In fact, as long as recess is formd, in order to subsequent packaging film
Filling forms anchoring structure into recess, that is, the anti-shear ability of OLED display panel can be improved.
The production process of OLED display panel as above is introduced below with reference to Fig. 6 a to Fig. 6 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Fig. 6 a, and by the conduction
It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110
Electrode is connected.
Then, with continued reference to shown in Fig. 6 a, it is thin that one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating
Film, and pixel defining layer 120, the pixel defining layer 120 are formed using corresponding patterned way according to the attribute of polymer
It is provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is photosensitive
Property polymer when) or pass through the method (when the polymer is non-photosensitive polymers) of exposure development and dry etching will
The thin polymer film is graphical, to form several pixel openings 130.
Followed by, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electrode 150,
And the first film encapsulated layer 161 is formed by way of such as CVD.The first film encapsulated layer 161 is inorganic film, can be with
Using silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or it is a variety of
Combination.
Next, etching the first film encapsulated layer 161, top electrode 150 and functional layer 140, it is fixed to form exposure pixel
The recess 170 of adopted layer 120.
Then, the second thin-film encapsulation layer 162 and third thin-film encapsulation layer 163 are formed.Third thin-film encapsulation layer 162 is similarly
Inorganic film can use silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in it is any one
Kind or a variety of combinations.Second thinner package film layer 162 be organic film, can fill recess 170 and with pixel defining layer 120
Contact.Since the second thinner package film layer 162 and pixel defining layer 120 are organic material, adhesive force between the two is preferable, can
Improve the adhesive force of thin dielectric film.
To sum up, in the present embodiment, above pixel defining layer formed recess, and the recess through the first film encapsulated layer,
Top electrode and functional layer form anchoring structure by the second thin-film encapsulation layer filling recess of organic material preparation, using the anchoring
Structure effectively enhances the adhesive capacity between thin-film encapsulation layer and top electrode, and the anti-shearing force of OLED display panel can be improved,
Be reduced or avoided between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift phenomenon.
Example IV
Fig. 7 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention four.As shown in fig. 7, the OLED display surface
Plate includes that substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel are fixed
Adopted layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In conjunction with shown in Fig. 8 a and Fig. 8 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED
Display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and non-luminescent
Area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer 140
It can not only be provided in pixel openings 130 with top electrode 150, also can be set above pixel defining layer 120, however be only
130 corresponding part of pixel openings shines, and constitutes luminous zone.Preferably, pixel defining layer 120 is close to one end (bottom of substrate 100
End) cross-sectional width be greater than its one end (top) far from substrate 100 cross-sectional width, can guarantee the top being subsequently formed in this way
Electrode 150 is continuously covered on the side wall of pixel defining layer 120, that is, guarantees the continuity of cathode.Specifically, the present embodiment
In, pixel defining layer 120 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction in positive ladder
Shape, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that in specific implementation, it is described
The longitudinal section of pixel defining layer 120 is also possible to other shapes, for example, the longitudinal section of the pixel defining layer 120 is also possible to just
The acclive shape of tool other than trapezoidal, the angle between the side wall and bottom wall of the pixel defining layer 120 can be at 30~80 degree
Between.
The study found that the bending performance in order to guarantee flexible screen body, it is desirable to the thickness of thin-film encapsulation layer gets over Bao Yuehao, but
Pixel region (luminous zone) wishes the thicker effects to guarantee barrier water oxygen of the inorganic film thickness in thin-film encapsulation layer again.Meanwhile
It is also desirable that the inorganic film in thin-film encapsulation layer can improve the adhesive capacity of thin-film encapsulation layer with pixel defining layer contact.It is based on
These are analyzed, and in the present embodiment, the thin-film encapsulation layer 160 includes the first film encapsulated layer 161 and the second thin-film encapsulation layer
162, both for inorganic film, silica (SiO can be used2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide
(TiO2) in any one or a variety of combinations.Specifically, it is initially formed the first film encapsulated layer 161, it is then fixed in pixel
The recess 170 for running through the first thinner package film layer 161, top electrode 150 and functional layer 140 is formed above adopted layer 120, then shape again
At the second thin-film encapsulation layer 162, which covers the first thinner package film layer 161 and fills recess
170.So, the first film encapsulated layer 161 and the second thin-film encapsulation layer 162 are formed at pixel openings, and in pixel
The first film encapsulated layer 161 of 120 top of definition layer is formed with recess, is equivalent to the partial region of 120 top of pixel defining layer
The first film encapsulated layer 161 dug up, and only the second thin-film encapsulation layer 162 is thinned 120 upper section of pixel defining layer
The inorganic film thickness in region.In addition, the second thin-film encapsulation layer 162 is contacted by recess 170 with pixel defining layer 120, increase
The contact area of second thin-film encapsulation layer 162 and pixel defining layer 120, although viscous between inorganic material and pixel defining layer
Attached power is not as good as adhesion strength between organic material and pixel defining layer, but the second thin-film encapsulation layer 162 and pixel defining layer 120
Between adhesion strength better than adhesion strength between the second thin-film encapsulation layer 162 and top electrode 150, thin-film encapsulation layer still can be improved
Adhesion strength, and anchoring structure itself also to improve device anti-shearing force it is helpful.
In the present embodiment, the first film encapsulated layer 161 and the second thin-film encapsulation layer 162 are inorganic film, actually may be used
It is formed twice with being not understood as the inorganic film of traditional primary depositing being divided into, i.e., the first film encapsulated layer 161 and second is thin
The overall thickness of film encapsulated layer 162 is identical as the inorganic film thickness that traditional primary depositing is formed, and for example, 0.5 μm~1.5 μm.
Specifically, the thickness of the first film encapsulated layer 161 is greater than or equal to the thickness of the second thin-film encapsulation layer 162, for example, the first film
The thickness proportion of encapsulated layer 161 and the second thin-film encapsulation layer 162 can between 1:1~10:1, why in this way setting be for
Water and oxygen barrier property and bending performance are taken into account, the thickness of one side the first film encapsulated layer 161 is unsuitable excessively thin to avoid etching
Functional layer is damaged when forming recess, the thickness of the second thin-film encapsulation layer 162 is on the other hand set smaller than the first film encapsulation
The thickness of the thickness of layer 161, the second thin-film encapsulation layer 162 retained in recess 170 subsequent in this way is relatively thin, can be well
Play the effect of bending.Practice discovery, the first film encapsulated layer 161 and the second thin-film encapsulation layer 162 with a thickness of 1:1 (i.e. two
When person's thickness is equal), it can preferably take into account water and oxygen barrier property and bending performance.
In the present embodiment, cross-sectional width of the recess 170 close to one end (bottom end) of substrate 100 is less than it far from substrate 100
One end (top) cross-sectional width, specifically, the recess 170 perpendicular to substrate surface and is parallel to pixel defining layer width
The section (longitudinal section) in direction is in inverted trapezoidal, it is preferred that the longitudinal section of the recess 170 is isosceles trapezoid.It is understood that
In specific implementation, the longitudinal section of the recess 170 is also possible to other shapes, for example, the longitudinal section of the recess 170 is also possible to
It is greater than the cross-sectional width of its one end (top) far from substrate 100 close to the cross-sectional width of one end (bottom end) of substrate 100, it is described
Recess 170 is perpendicular to substrate surface and is parallel to the section of pixel defining layer width direction in trapezoid.It is understood that real
In the production of border, allow that there are certain deviations between the true form (and size) and design shape (and size) of various products.One
As, as long as the true form (and size) of product is in the deviation range that design shape (and size) allows, can reach makes
With requiring.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall is less than 90 degree, such as 30~80
Between degree；The side wall of the recess is also possible to the arcwall with some radians, its tangent line and bottom when side wall is arcwall
The angle of wall is less than 90 degree, such as between 30~80 degree.
In the present embodiment, 170 cross section (the being parallel to substrate surface) shape of being recessed can be round, ellipse or polygon
Shape, polygonal triangle in this way, rectangle, diamond shape etc., the present invention not limit this.
In the present embodiment, recess is each formed in the pixel defining layer of corresponding each pixel unit, and each pixel is fixed
It is each on adopted layer to form multiple recess.When it is implemented, being also possible to respectively form a recess in each pixel defining layer.Moreover,
It can also need not be respectively formed on recess in the pixel defining layer of all areas of substrate 100, for example, for folding Flexible Displays
For panel, recess can be only formed in the pixel defining layer for folding position, because region bending probability is big, relative to seldom
For the region of bending, it is easier between the thin-film encapsulation layer and cathode at the folding position and inside functional layer between each film layer
Separation or displacement occurs, it is advantageous to recess is formed in the pixel defining layer in this region.On the other hand, the recess of each region
Size and shape can be identical, can also be not exactly the same.In fact, as long as recess is formd, in order to subsequent envelope
Dress film, which is filled, forms anchoring structure into recess, that is, the anti-shear ability of OLED can be improved.
The production process of OLED display panel as above is briefly introduced below with reference to Fig. 8 a to Fig. 8 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Fig. 8 a, and by the conduction
It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110
Electrode is connected.
Then, with continued reference to shown in Fig. 8 a, it is thin that one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating
Film, and pixel defining layer 120, the pixel defining layer 120 are formed using corresponding patterned way according to the attribute of polymer
It is provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is photosensitive
Property polymer when) or pass through the method (when the polymer is non-photosensitive polymers) of exposure development and dry etching will
The thin polymer film is graphical, to form several pixel openings 130.
Followed by, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electrode 150,
And the first film encapsulated layer 161 is formed by way of such as CVD.The first film encapsulated layer 161 is inorganic film, can be with
Using silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or it is a variety of
Combination.
Next, as shown in Figure 8 b, etching the first film encapsulated layer 161, top electrode 150 and functional layer 140, formed
The recess 170 of exposure pixel defining layer 120.Specifically, for example, by being InkJet printing processes on the first film encapsulated layer 161
It is rectangular at patterned protective layer, the patterned protective layer protects the region for not necessarily forming recess 170, then passes through
Such as the mode of dry etching etches the first film encapsulated layer 161, top electrode 150 and the functional layer of 120 top of pixel defining layer
140, to form recess 170.Then, the protective layer of inkjet printing formation can be removed, and forms the second thin-film encapsulation layer 162,
As shown in Figure 7.Certainly, the protective layer can not also remove, but directly form the second thin-film encapsulation layer 162 on the protection layer,
To realize the purpose that do not lose water oxygen obstructing capacity and improve bending performance.
Above-mentioned is the forming process that recess 170 is described so that inkjet printing is patterned as an example, can also in specific implementation
Photoresist is formed above the first film encapsulated layer 161 in a manner of through spin coating, and carries out exposure and imaging technique and is formed graphically
Photoresist layer, the patterned photoresist layer protects the region for not necessarily forming recess 170, then for example, by dry etching
Mode etch the first film encapsulated layer 161, top electrode 150 and the functional layer 140 of the top of pixel defining layer 120, it is recessed to be formed
Fall into 170.Then, patterned photoresist layer can be removed, and forms the second thin-film encapsulation layer 162.
Second thin-film encapsulation layer 162 is similarly inorganic film, can use silica (SiO2), silicon nitride
(SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.
In the present embodiment, the thin-film encapsulation layer 160 can also include that third thin-film encapsulation layer 163 and the 4th film seal
Layer 164 is filled, third thin-film encapsulation layer 163 is organic film, and the 4th thin-film encapsulation layer 164 is then inorganic film.
To sum up, in the present embodiment, above pixel defining layer formed recess, and the recess through functional layer, top electrode and
The first film encapsulated layer forms anchoring structure by the second thin-film encapsulation layer filling recess of inorganic material preparation, using the anchoring
Structure effectively enhances the adhesive capacity between thin-film encapsulation layer and top electrode, and the anti-shearing force of OLED display panel can be improved,
Be reduced or avoided between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift phenomenon.
In addition, the first film encapsulated layer and the second thin-film encapsulation layer are formed at pixel openings, and above pixel defining layer
One thin-film encapsulation layer is formed with recess, and the first film encapsulated layer for being equivalent to the partial region above pixel defining layer is dug up,
It is thinned the subregional inorganic film thickness of pixel defining layer upper portion, is conducive to improve bending performance.
Embodiment five
Fig. 9 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention five.As shown in figure 9, the OLED is aobvious
Show panel include substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), as
Plain definition layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In the present embodiment, cross-sectional width of the pixel defining layer 120 close to one end (bottom end) of substrate 100 is less than it far from base
The cross-sectional width of one end (top) of plate 100, that is, the pixel defining layer 120 is structure wide at the top and narrow at the bottom.Specifically, described recessed
170 are fallen into perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction in inverted trapezoidal.It is understood that
, in actual production, allow to exist between the true form (and size) and design shape (and size) of various products certain
Deviation.It generally, can as long as the true form (and size) of product is in the deviation range that design shape (and size) allows
Reach requirement.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall less than 90 degree, such as
Between 30~80 degree；The side wall of the recess is also possible to the arcwall with some radians, and when side wall is arcwall, it is cut
The angle of line and bottom wall is less than 90 degree, such as between 30~80 degree.
Since the pixel defining layer 120 is structure wide at the top and narrow at the bottom, in this way, being subsequently formed functional layer 140 and top electrode 150
When, functional layer 140 and top electrode 150 are not easy at the base angle for being filled into the pixel defining layer 120, the function at pixel openings 130
Functional layer 140 and top electrode 150 at layer 140 and top electrode 150 and pixel defining layer 120 are to disconnect, pixel defining layer 120
There is recess 170 (emphasis refers to Figure 10 b) between the functional layer in pixel openings, which is located at pixel defining layer 120
Two sides in width direction, thin-film encapsulation layer 160, which can be filled, forms anchoring structure in the recess 170, improves the shearing resistance of OLED
Shear force.
Since the top electrode 150 of 120 top of top electrode 150 and pixel defining layer at pixel openings 130 is to disconnect, phase
It answers, segmentation structure, as shown in figure 11, pixel openings can be set by the pixel defining layer 120 around pixel openings 130
Four sections of pixel defining layers 120 (one section of pixel defining layer 120 is arranged in every side) can be set in 130 surroundings, and adjacent two sections of pixels are fixed
Top electrode 150 can be deposited in position between adopted layer, hereby it is ensured that top electrode 150 realizes electrical connection.Alternatively, pixel openings
Multistage pixel defining layer 120 is arranged in 130 every side.Certainly, the shape of pixel defining layer 120 and quantity are not limited to
Citing is stated, for example, one section of pixel defining layer 120, the pixel can also be arranged in 130 surrounding of pixel openings with reference to shown in Figure 12
The notch that there is definition layer 120 an achievable top electrode 150 to be electrically connected.
The thin-film encapsulation layer 160 is arranged alternately by organic film and inorganic film to be constituted.Specifically, in the present embodiment,
As shown in figure 9, the thin-film encapsulation layer 160 includes six layer structure, the first film encapsulated layer 161 respectively stacked gradually, the
Two thin-film encapsulation layers 162, third thin-film encapsulation layer 163, the 4th thin-film encapsulation layer 164, the 5th thin-film encapsulation layer the 165, the 6th are thin
Film encapsulated layer 166.Wherein, the first film encapsulated layer 161, third thin-film encapsulation layer 163, the 5th thin-film encapsulation layer 165 are organic
Film layer, the second thin-film encapsulation layer 162, the 4th thin-film encapsulation layer 164, the 6th thin-film encapsulation layer 166 are inorganic film, that is, first
To the 6th encapsulation film layer using organic film and the alternatively distributed mode of inorganic film.Wherein, the second thin-film encapsulation layer
162, the 4th thin-film encapsulation layer 164, the 6th thin-film encapsulation layer 166 can use silica (SiO2), silicon nitride (SiN), oxidation
Aluminium (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.It should be understood that the thin-film encapsulation layer 160 is not
It is limited to six layer structure, can also be and be made of more layers, for example (such as four layers+four layers of organic film inorganic using eight layers of structure
Film layer), it is also possible to be made of fewer layers, for example use four-layer structure (such as two layers of+two layers inorganic film of organic film), it can
The quantity of thin-film encapsulation layer and the thickness of each layer are adjusted according to actual needs, and the present invention not limits this.
Preferably, as shown in figure 9, the inorganic film in the thin-film encapsulation layer 160 in addition to top is (in the present embodiment
Refer to the second thin-film encapsulation layer 162 and the 4th thin-film encapsulation layer 164) it is all made of segmentation structure, that is, the nothing in addition to top
Machine film layer and be non-whole face film layer, but there are some openings, so that two layers adjacent of organic film be made mutually to interconnect by opening
It connects to form closing structure, further increases anti-shearing force.
Although above-mentioned is to be all made of segmentation structure with all inorganic films in thin-film encapsulation layer 160 in addition to top
The explanation of progress, it should be appreciated that in all inorganic films in addition to top, be also possible in the inorganic film of other positions
Only part uses segmentation structure, then the segmentation structure upper layer and lower layer organic film can be connected with each other, for example, with reference to 13
Shown, the thin-film encapsulation layer 160 includes eight layers of structure, and the first to the 8th thin-film encapsulation layer 161 respectively stacked gradually~
168, wherein the first film encapsulated layer 161, third thin-film encapsulation layer 163, the 5th thin-film encapsulation layer 165, the 7th thin-film encapsulation layer
167 be organic film, the second thin-film encapsulation layer 162, the 4th thin-film encapsulation layer 164, the 6th thin-film encapsulation layer 166, the 8th film
Encapsulated layer 168 is inorganic film, and the second thin-film encapsulation layer 162 and the 4th thin-film encapsulation layer 164 use segmentation structure, and the 6th is thin
Film encapsulated layer 166 and the 8th thin-film encapsulation layer 168 then use whole face structure, can also improve to a certain degree anti-shearing force, also,
Multilayer inorganic film is provided with above pixel defining layer 120, and (this refers to the 6th thin-film encapsulation layer 166 and the 8th thin-film encapsulation layers
168) it is also beneficial to guarantee to obstruct the effect of water oxygen at the position.
The production process of OLED display panel as above is introduced below with reference to Figure 10 a to Figure 10 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Figure 10 a, and by the conduction
It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110
Electrode is connected.
Then, it continues to refer to figure 1 shown in 0a, prepares one layer of polymeric on hearth electrode 110 for example, by the method for spin coating
Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer
120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is light
When sensitive polymer) or the method that passes through exposure development and dry etching (when the polymer is non-photosensitive polymers)
The thin polymer film is graphical, to form several pixel openings 130.By in this present embodiment, the pixel defining layer
120 be structure wide at the top and narrow at the bottom, so it is preferred that can be formed under upper width as exposure mask using exposure development technique using negative photoresist
Narrow pixel defining layer 120.
Followed by the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electrode 150.
Due to the structure wide at the top and narrow at the bottom that the pixel defining layer 120 uses, so its have close to the corner of hearth electrode 110 it is recessed
It falling into, the thickness of functional layer 140 and top electrode 150 is relatively thin, it is not easy to fill the full recess, so, form functional layer 140 and top
There are 170 (fillable gaps) of recess, such as after electrode 150, between the functional layer in pixel defining layer 120 and pixel openings
Shown in Figure 10 b.Preferably, it for top illuminating device, is formed after top electrode 150, also by the way that mode or spray is such as deposited
The mode of ink printing forms light coupling layer (CPL) on top electrode 150, to improve light extraction efficiency.In addition, the shape by way of vapor deposition
When at functional layer 140, top electrode 150 and CPL, it can be formed, can also be adopted using FMM (be open lesser evaporation mask plate)
It is formed with OPENMASK (be open biggish evaporation mask plate), because pixel defining layer 120 is structure wide at the top and narrow at the bottom (as fallen
Trapezium structure), the film layer of luminous zone inherently may be implemented using OPEN MASK vapor deposition functional layer 140, top electrode 150 and CPL
It is disconnected with the film layer at pixel defining layer, certainly, when using OPEN MASK vapor deposition functional layer 140, top electrode 150 and CPL, as
Above-mentioned film layer is also formed on plain 120 upper surface of definition layer.
After forming top electrode 150, with reference to shown in Figure 10 b, by the mode shape that mode or inkjet printing is such as deposited
At thin-film encapsulation layer 160.Due to having recess 170 between pixel defining layer 120 and functional layer 140, thin-film encapsulation layer
The 160 fillings recess 170, and the top electrode 150 is covered, so, the thin-film encapsulation layer being filled in recess 170
160 are equivalent to and constitute several anchoring structures, effectively enhance the anti-shearing force of OLED display panel, can avoid thin-film encapsulation layer
Occur separating or shift between top electrode and inside functional layer between each film layer.
Specifically, thin-film encapsulation layer 160 is thin including the first film encapsulated layer 161, second stacked gradually in the present embodiment
Film encapsulated layer 162, third thin-film encapsulation layer 163, the 4th thin-film encapsulation layer 164, the 5th thin-film encapsulation layer 165, the 6th film envelope
Fill layer 166.It is patterned when forming the second thin-film encapsulation layer 162 and four thin-film encapsulation layers 164 and becomes segmented knot
It is organic to be conducive to the first film encapsulated layer 161, third thin-film encapsulation layer 163, this three layers of the 5th thin-film encapsulation layer 165 in this way for structure
Film layer is interconnected to form closing structure, can further enhance the anti-shearing force of OLED display panel.Thin-film encapsulation layer 160
The inorganic film (referring to the 6th thin-film encapsulation layer 166 in the present embodiment) of middle top then uses whole face structure, preferable to realize
Water oxygen barriering effect.
Figure 14 is another diagrammatic cross-section of OLED display panel in the embodiment of the present invention.As shown in figure 14, the picture
It may also be formed with hole 120 ' in plain definition layer 120, the cross-sectional width of the one end (bottom end) of the hole 120 ' close to substrate 100 is greater than
The cross-sectional width of its one end (top) far from substrate 100.It the hole 120 ' can be through the pixel defining layer 120 to sudden and violent
Expose hearth electrode 110, can also only through part thickness pixel defining layer 120.As a unrestricted example, the hole
120 ' perpendicular to substrate surface and are parallel to the section (longitudinal section) of pixel defining layer width direction in trapezoid, it is preferred that institute
The longitudinal section for stating hole 120 ' is isosceles trapezoid.It, can since the hole 120 ' and pixel openings 130 are up-narrow and down-wide structure
By a patterning processes, such as exposure development technique and/or dry carving technology, it is formed simultaneously the hole 120 ' and pixel openings
130, that is, while forming pixel defining layer 120, form hole 120 ' also in pixel defining layer 120, exposure mask can be saved in this way
Cost, simplification of flowsheet.The presence in the hole 120 ' can be further improved the adhesiveness of thinner package film layer 160, avoid thin
Occur between film encapsulated layer and cathode and inside functional layer separating between each film layer or shifting phenomena.
Embodiment six
Above embodiments describe the method for forming recess by patterning process, which includes exposure development
Technique and/or etching technics.And in the present embodiment, then it is to form pixel unit after forming functional layer and top electrode
Later, it using laser (or dry etching etc.) technique, smashes the part OLED film layer of dead space in product to form recess, create
The adhesive force of encapsulation film layer is improved in the region that thin-film encapsulation layer is directly contacted with lower pixel definition layer whereby.
Figure 15 is a kind of schematic diagram for the distribution being recessed in the present embodiment, as shown in figure 15, by red sub-pixel R, green
The four corners for the pixel unit that sub-pixel G, blue subpixels B are constituted respectively are distributed a recess 170.Certainly, the present invention is real
Quantity and distributing position that example is not intended to limit recess 170 are applied, for example, it is multiple recessed to can also be that the four corners of pixel unit are respectively distributed
170 are fallen into, is also possible to that recess 170 only is distributed in a corner of pixel unit.The recess 170 can be evenly distributed in
On substrate, it is also possible to heterogeneous be distributed on substrate.The dead space refers to the region except light emitting sub-pixel, described recessed
The position that can correspond to pixel defining layer is fallen into, the position corresponded to except pixel defining layer is also possible to.
When it is implemented, pixel defining layer can be formed above several boss, the recess can be correspondingly formed in convex
The position of platform can be and be each formed with recess at all boss, be also possible to be formed with recess at the boss of part, also, each
It could be formed with a recess or multiple recess at boss.Wherein, cross-sectional width example of the boss close to one end of pixel defining layer
It is such as greater than the cross-sectional width of its one end far from pixel defining layer, for example, boss is perpendicular to substrate surface and is parallel to pixel
The section of definition layer width direction is in trapezoid.The boss can play a supporting role, for example, when vapor deposition forms functional layer,
Certain supporting role can be played to vapor deposition mask plate, if also, apply to when needing to form glass cover-plate in hard screen, also to glass
Glass cover board has certain supporting role, and, the region for limiting periphery Frit (frit) packaging plastic can also be cooperated.
By be recessed correspond to pixel defining layer position for, can only the top electrode above the pixel defining layer and
Functional layer is also possible to after the top electrode above pixel defining layer and functional layer also to expose pixel defining layer
Downward through the pixel defining layer of segment thickness or full depth, and can be after the pixel defining layer of full depth also
Downward through segment thickness or the planarization layer of full depth.Certainly, the recess can not limit the depth of recess with the present invention
Degree, as long as the part for corresponding to dead space in product smash forming recess, those skilled in the art can basis
Specific product design situation correspondingly selects suitable depth, as long as not influencing normal luminous.
Specifically, as shown in figure 16, the light shield shading with transparent area can be used, full plate scanning is carried out with laser, is penetrated
The laser of light shield can smash the film layer of target area, smash at form recess, make thin-film encapsulation layer through recess and lower section
Pixel defining layer directly contacts, and increases its adhesive force.Can be used has the execution of dotted or linear beam spot laser system above-mentioned
Movement is smashed, laser facula forms many tiny hot spots through patterned light shield on object, will be on target area
Desired film removal, those skilled in the art be arranged according to specific needs specific laser energy and select it is suitable
Light shield not limits herein.
In addition, the present embodiment is to the concrete shape for being formed by recess using the above method and is not construed as limiting, it is recessed 170
Shape can be preferably one of cylindrical body, Elliptic Cylinder, rotary table, inverted round stage, cuboid or square or any combination, institute
State recess 170 or non-regular shape.Also, the shape (and size) of the recess on each region can be identical, can also
With not identical.Wherein, it is, for example, between 5-25 μm, when it is implemented, originally that the laser boring, which is formed by the aperture of recess,
Field technical staff adjusts pore size according to specific needs.
Embodiment seven
Figure 17 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention seven.As shown in figure 17, which shows
Panel includes substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel
Definition layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.In addition, described
OLED display panel further includes the boss 180 being formed in pixel defining layer 120.
In conjunction with shown in Figure 18 a and Figure 18 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.
OLED display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and non-
Luminous zone, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer
140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, however
It is only that 130 corresponding part of pixel openings shines, constitutes luminous zone.
Wherein, cross-sectional width of the pixel defining layer 120 close to one end (bottom end) of substrate 100 is greater than it far from substrate 100
One end (top) cross-sectional width.It is remote that cross-sectional width of the boss 180 close to one end (bottom end) of pixel defining layer 120 is less than it
The cross-sectional width of one end (top) from pixel defining layer 120.Specifically, pixel defining layer 120 is perpendicular to base in the present embodiment
Plate surface and the section (longitudinal section) of pixel defining layer width direction is parallel in trapezoid, boss 180 is perpendicular to substrate surface
And the section (longitudinal section) of pixel defining layer width direction is parallel in inverted trapezoidal, the bottom end of boss 180 and pixel defining layer 120
Top be in contact.Also, the cross-sectional width on the top of the pixel defining layer 120 is greater than the top of the pixel defining layer 120
The cross-sectional width at end.In this way, recess 170 is just constituted between pixel defining layer 120 and boss 180, thin-film package process
In, thin-film encapsulation layer flows into recess 170 and forms anchoring structure, reaches the adhesive force for improving thin-film encapsulation layer and substrate and prevents
The effect of OLED film layer separation.On the other hand, the boss 180 may also function as supporting role, for example, subsequent vapor deposition forms function
When layer, certain supporting role can be played to vapor deposition mask plate, and, if applying to when needing to form glass cover-plate in hard screen,
It also has certain supporting role to glass cover-plate, prevents glass cover-plate in bonding processes from rupturing.
The longitudinal section of the pixel defining layer 120 is preferably isosceles trapezoid, and the longitudinal section of the boss 180 is preferably etc.
Waist inverted trapezoidal.In specific implementation, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example, the pixel
The longitudinal section of definition layer 120 is also possible to up-narrow and down-wide shape or inverted trapezoidal other than other shapes, such as trapezoid etc., should
The longitudinal section of boss 180 is also possible to the shape wide at the top and narrow at the bottom other than inverted trapezoidal.It is understood that no matter pixel defining layer
What shape 120 be, as long as cross-sectional width of the boss 180 close to one end (bottom end) of pixel defining layer 120 is less than it far from pixel
The cross-sectional width of one end (top) of definition layer 120, may make up recess 170.
The production process of OLED display panel as above is introduced below with reference to Figure 18 a to Figure 18 b.
Firstly, providing a substrate 100, and form conductive film on the substrate 100, and this is transparent in conjunction with shown in Figure 18 a
Conductive film pattern, forms multiple hearth electrodes 110, multiple hearth electrodes 110 respectively with the driving transistor of different pixels unit
Drain electrode be connected.
Then, it continues to refer to figure 1 shown in 8a, prepares one layer of polymeric on hearth electrode 110 for example, by the method for spin coating
Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer
120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is light
When sensitive polymer) or the method that passes through exposure development and dry etching (when the polymer is non-photosensitive polymers)
The thin polymer film is graphical, to form several pixel openings 130.
With reference to shown in Figure 18 b, pixel defining layer 120 and then the secondary method for example, by spin coating are formed in pixel definition
One layer of polymeric film is prepared on layer 120, and boss 180 is formed using corresponding patterned way according to the attribute of polymer,
The boss 180 is set on pixel defining layer 120.Specifically, can be by the method for exposure development (when the polymer is light
When sensitive polymer) or the method that passes through exposure development and dry etching (when the polymer is non-photosensitive polymers)
The thin polymer film is graphical, to form boss 180.
Wherein, boss 180 can be identical with the material of pixel defining layer 120, can not also be identical.With the two by same
For photosensitive polymers are made, under type such as can be used and be respectively formed boss 180 and pixel defining layer 120: firstly, using just
Photoresist forms the pixel defining layer of trapezoid using exposure development technique as exposure mask；Then, using negative photoresist as exposure mask,
The boss 180 of inverted trapezoidal is formed using exposure development technique.The overall thickness (height) of the pixel defining layer 120 and boss 180
Such as between 2 μm -8 μm, in this way, i.e. it is advantageously ensured that thickness will not flex capability that is too high and influencing display panel, and have
Conducive to ensure thickness will not it is too small and influence pixel defining layer define and support function.
Followed by the mode by the way that mode or inkjet printing is such as deposited forms thin-film encapsulation layer 160.Due to recess 170
Presence, thin-film encapsulation layer 160 can be filled it is described recess 170, so, be filled in recess 170 in thin-film encapsulation layer 160
Be equivalent to and constitute several anchoring structures, effectively enhance the anti-shearing force of OLED display panel, can avoid thin-film encapsulation layer with
Occur separating or shift between top electrode and inside functional layer between each film layer.Wherein, thin-film package preferably uses organic material
The mode of material and inorganic material combination, for example inorganic material/organic material/inorganic material laminated construction is used, specifically, can
To use following several combinations: silicon nitride/organic material/silicon nitride；Aluminium oxide+silicon nitride/organic material/silicon nitride+
Aluminium oxide；Silica+silicon nitride/organic material/silicon nitride+silica.
In specific implementation, it may also be formed with boss openings (not shown) in the boss 180, the boss openings are close
The cross-sectional width of one end (bottom end) of substrate 100 is greater than the cross-sectional width of its one end (top) far from substrate 100.The boss
Opening can run through the boss 180 and pixel defining layer 120, can also only through part thickness boss 180, may also extend through
The pixel defining layer 120 of boss 180 and segment thickness.Certainly, the boss openings may also be through the pixel definition
The planarization layer that segment thickness is also extended downwardly through after layer 120 is also possible to also downward after the pixel defining layer 120
Entire planarization layer is extended through to expose the film layer (such as passivation layer) below planarization layer.The cross of the boss openings
Cross sectional shape can be circle, ellipse, triangle, rectangle or other polygons.The boss openings are perpendicular to substrate table
Face and the section (longitudinal section) for being parallel to pixel defining layer width direction are preferably in trapezoid.Can by a patterning processes, than
Such as exposure development technique and/or dry carving technology, it is formed simultaneously boss 180 and boss openings, that is, while forming boss 180, also
Boss openings are formed in boss 180, can save exposure mask cost, simplification of flowsheet in this way.The presence of the boss openings
The adhesiveness that can be further improved thinner package film layer 160, avoids between thin-film encapsulation layer and cathode and functional layer inside is each
Occur separating between film layer or shifting phenomena.
Embodiment eight
Figure 19 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention.As shown in figure 19, the OLED display surface
Plate includes that substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel are fixed
Adopted layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.In addition, described
OLED display panel further includes the boss 180 being formed in pixel defining layer 120.
In conjunction with shown in Figure 20 a and Figure 20 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.
OLED display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and non-
Luminous zone, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer
140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, however
It is only that 130 corresponding part of pixel openings shines, constitutes luminous zone.
Wherein, thin-film encapsulation layer 160 is arranged alternately by organic film and inorganic film and is constituted.It is described thin in the present embodiment
Film encapsulated layer 160 includes three-decker, respectively the first film encapsulated layer 161, the second thin-film encapsulation layer 162 and third film envelope
Fill layer 163.Wherein, the first film encapsulated layer 161 and third thin-film encapsulation layer 163 are inorganic film, the second thin-film encapsulation layer 162
For organic film.Wherein, the first film encapsulated layer 161 and third thin-film encapsulation layer 163 can use silica (SiO2), nitridation
Silicon (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.Preferably, in boss 180
Top is all that the first film encapsulated layer 161 of inorganic film and third thin-film encapsulation layer 163 contact with each other (without the second film
Encapsulated layer 162), and at other positions it is then the first film encapsulated layer 161, the second thin-film encapsulation layer 162 and third film envelope
Dress layer 163 stacks gradually.In this way, the binding force of inorganic film is stronger at 180 position of boss, the anti-shearing force of OLED can be improved.
The pixel defining layer 120 and the overall thickness (height) of boss 180 are for example between 2 μm -8 μm.In the present embodiment, the pixel
The overall thickness (height) of definition layer 120 and boss 180 is for example between 3 μm -4 μm, the thickness of the first film encapsulated layer 161
Between 0.5 μm -1.5 μm, the thickness of second thin-film encapsulation layer 162 is between 2 μm -3 μm, also, the first film encapsulates
Layer the sum of 161 and 162 thickness of the second thin-film encapsulation layer are equal to pixel defining layer 120, boss 180 and the first film encapsulated layer
The sum of 161 thickness, that is, 161 top surface of the first film encapsulated layer of 180 top of boss and the second thin-film encapsulation layer at other positions
162 top surfaces flush, so that the first film encapsulated layer 161 of 180 top of boss be made directly to contact with third thin-film encapsulation layer 163.
Further, cross-sectional width of the pixel defining layer 120 close to one end (bottom end) of substrate 100 is greater than it far from substrate
The cross-sectional width of 100 one end (top).Cross-sectional width of the boss 180 close to one end (bottom end) of pixel defining layer 120 is less than
The cross-sectional width of its one end (top) far from pixel defining layer 120.Specifically, pixel defining layer 120 is hung down in the present embodiment
Directly in substrate surface and the section (longitudinal section) of pixel defining layer width direction is parallel in trapezoid, boss 180 is perpendicular to base
Plate surface and the section (longitudinal section) for being parallel to pixel defining layer width direction are in inverted trapezoidal, and the bottom end of boss 180 and pixel are fixed
The top of adopted layer 120 is in contact.Also, the cross-sectional width on the top of the pixel defining layer 120 is greater than the pixel defining layer
The cross-sectional width on 120 top.In this way, recess 170 is just constituted between pixel defining layer 120 and boss 180, film envelope
During dress, thin-film encapsulation layer flows into recess 170 and forms anchoring structure, reaches the adhesive force for improving thin-film encapsulation layer and substrate
And the effect for preventing OLED film layer from separating.On the other hand, the boss 180 may also function as supporting role, for example, subsequent vapor deposition shape
When at functional layer, certain supporting role can be played to vapor deposition mask plate (mask), and, it is needed to form if applying in hard screen
When glass cover-plate, also there is certain supporting role to glass cover-plate, prevents glass cover-plate in bonding processes from rupturing.
The longitudinal section of the pixel defining layer 120 is preferably isosceles trapezoid, and the longitudinal section of the boss 180 is preferably etc.
Waist inverted trapezoidal.It should be understood that in specific implementation, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example,
The longitudinal section of the pixel defining layer 120 is also possible to the up-narrow and down-wide shape other than other shapes, such as trapezoid or falls terraced
Shape etc., the longitudinal section of the boss 180 are also possible to the shape wide at the top and narrow at the bottom other than inverted trapezoidal.
The production process of OLED display panel as above is introduced below with reference to Figure 20 a to Figure 20 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Figure 20 a, and by the conduction
It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110
Electrode is connected.
Then, with continued reference to shown in Figure 20 a, one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating
Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer
120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is light
When sensitive polymer) or the method that passes through exposure development and dry etching (when the polymer is non-photosensitive polymers)
The thin polymer film is graphical, to form several pixel openings 130.Similarly, pixel defining layer 120 and then secondary is formed
One layer of polymeric film is prepared in pixel defining layer 120 for example, by the method for spin coating, and is used according to the attribute of polymer
Corresponding patterned way forms boss 180, and the boss 180 is set on pixel defining layer 120.Specifically, can pass through
Exposure development method (when the polymer is photosensitive polymers) or the method that passes through exposure development and dry etching
(when the polymer is non-photosensitive polymers) is graphical by the thin polymer film, to form boss 180.Wherein, boss
180 can be identical with the material of pixel defining layer 120, can not also be identical.It is made with the two of same photosensitive polymers
For, under type such as can be used and be respectively formed boss 180 and pixel defining layer 120: firstly, using positive photoresist as exposure mask, benefit
The pixel defining layer of trapezoid is formed with exposure development technique；Then, exposure development technique is utilized as exposure mask using negative photoresist
Form the boss 180 of inverted trapezoidal.The overall thickness (height) of the pixel defining layer 120 and boss 180 for example 2 μm -8 μm it
Between.
Followed by as shown in fig. 20b, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140
With top electrode 150, and, the first film encapsulated layer 161 is formed by way of such as CVD.The first film encapsulated layer 161 is nothing
Machine film layer can use silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one
Or a variety of combination.The thickness of the first film encapsulated layer 161 is between 0.5 μm -1.5 μm.
Then, as shown in figure 19, the second thin-film encapsulation layer 162 and third thin-film encapsulation layer 163 are formed.Second packaging film
Layer 162 is organic film, can fill recess 170 and contact with pixel defining layer 120.Second thin-film encapsulation layer 162
Thickness is between 2 μm -3 μm.Third thin-film encapsulation layer 162 is similarly inorganic film, can use silica (SiO2), silicon nitride
(SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.
In the present embodiment, the top of the first film encapsulated layer 161 above 162 top surface of the second thinner package film layer and boss
Face flushes, and the top surface of the first film encapsulated layer 161 is exposed, when being subsequently formed third thin-film encapsulation layer 163 in this way, convex
180 top of platform, is all that the third thin-film encapsulation layer 163 of inorganic film and the first film encapsulated layer 161 contact with each other, this is equivalent to
It (is then that organic film contacts (such as third with inorganic film at other positions that inorganic film, which is combined, at 180 position of boss
Thin-film encapsulation layer 163 and the second thin-film encapsulation layer 162)) the experiment has found that such combination is conducive to improve the anti-of OLED
Shearing force.
In specific implementation, it may also be formed with boss openings (not shown) in the boss 180, the boss openings are close
The cross-sectional width of one end (bottom end) of substrate 100 is greater than the cross-sectional width of its one end (top) far from substrate 100.The boss
Opening can run through the pixel defining layer 120 of the boss 180 and segment thickness or full depth, can also only through part thickness
Boss 180.The cross-sectional shape of the boss openings can be for circle, ellipse, triangle, rectangle or other are polygon
Shape.The boss openings are perpendicular to substrate surface and are parallel to the section (longitudinal section) of pixel defining layer width direction preferably in just
It is trapezoidal.It can be formed simultaneously boss 180 by a patterning processes, such as exposure development technique and/or dry carving technology and boss is opened
Mouthful, that is, while forming boss 180, boss openings are also formed in boss 180, can save exposure mask cost in this way, simplify work
Skill process.The presence of the boss openings can be further improved the adhesiveness of thinner package film layer 160, avoid thin-film encapsulation layer with
Occur between cathode and inside functional layer separating between each film layer or shifting phenomena.
Embodiment nine
As shown in figure 21, the present embodiment provides a kind of OLED display panel, including substrate 100 and it is formed in the substrate
Hearth electrode, pixel defining layer 120, functional layer, top electrode and thin-film encapsulation layer on 100；The pixel defining layer 120 is formed with
Several pixel openings, hearth electrode, functional layer and top electrode in the pixel openings constitute pixel unit.
The OLED display panel further includes the dike for being formed on the substrate 100 and surrounding the pixel defining layer 120
Dam is formed with several recess in the dykes and dams.
The dykes and dams e.g. include the first dykes and dams 191 and the second dykes and dams 192, and the first dykes and dams 191 surround pixel defining layer
120, the second dykes and dams 192 surround the first dykes and dams 191.
The thin-film encapsulation layer is, for example, to include the first film encapsulated layer 161 and setting in the first film encapsulated layer
The second thin-film encapsulation layer 162 on 161 upper surfaces.The first film encapsulated layer 161 is inorganic film, the second thin-film encapsulation layer 162
For organic film.
More than one recess 160 is provided at least one dykes and dams in first dykes and dams 191 and the second dykes and dams 192, such as
Can be has more than one recess 160 on the first dykes and dams 191, be also possible to have more than one recess 160 on the second dykes and dams 192,
Or first be both provided with recess 160 on dykes and dams 191 and the second dykes and dams 192.The recess 160 e.g. groove or through-hole,
The shape of the recess 160 is one kind in cylindrical body, Elliptic Cylinder, rotary table, inverted round stage, cuboid or square or its any group
It closes.The recess 160 being arranged on 191 upper surface of the second dykes and dams 192 and the first dykes and dams, can prevent due to inkjet printing organic film
When organic gel overflow, stress when dispersion screen body bending while enhancing inorganic layer adhesive force.
First dykes and dams 191 and the second dykes and dams 192 can play the role of dam, can prevent from having when forming organic film
The diffusion of organic matter in machine film layer.As shown in figure 21, the organic matter in organic film is by the first dykes and dams 191 and/or the second dike
Dam 192 stops.Further, the recess that the first dykes and dams 191 and the gap between the two of second dykes and dams 192 are formed, can be with
Be conducive to the spilling for stopping organic matter.
In the present embodiment, the organic film includes polymer.Polymer includes polyethylene terephthalate, gathers
Acid imide, polycarbonate, epoxy resin, polyethylene and/or polyacrylate etc..Organic film, which can play, absorbs stress and true
Protect effect flexible.The material of the substrate includes polyimide, polyethylene terephthalate or plastics.
As illustratively, the plan view shape of the first dykes and dams 191 is circular, oval ring-type or polygon ring-type, described polygon
Ring-type is, for example, square ring, diamond shape is cyclic annular, parallelogram is cyclic annular.Second dykes and dams 192 and 191 structure of the first dykes and dams are similar
Seemingly, therefore not to repeat here.
In one embodiment, the display device further include: the upper table of second thin-film encapsulation layer 162 is set
Third thin-film encapsulation layer 163 on face.In the present embodiment, the first film encapsulated layer 161 and the third thin-film package
Layer 163 includes metal oxide and/or metal nitride.Metal oxide and/or metal nitride may include SiNx,
Al2O3、SiO2And/or TiO2。
It should be understood that the shape for the recess 160 being arranged on 192 upper surface of the first dykes and dams 191 and the second dykes and dams can be identical,
Can be different, for example a part is circle, another part is rectangular；Alternatively, 192 opening of the first dykes and dams 191 and the second dykes and dams
Between shape is identical but size can be different；Again alternatively, the shape and size between two recess 160 are all different.Moreover, two
Recess on a dykes and dams can also be with non-uniform Distribution in dykes and dams.The cross section of the recess 160 (is parallel to cutting for orientation substrate
Face) shape be e.g. circle, triangle, rectangle, trapezoidal, diamond shape or irregular shape.
The present embodiment also provides a kind of OLED display panel preparation method, comprising:
One substrate is provided, hearth electrode, pixel defining layer, functional layer, top electrode are formed on the substrate, the pixel is fixed
Adopted layer is formed with several pixel openings, and the hearth electrode, functional layer and top electrode in the pixel openings constitute pixel list
Member；
It is formed on the substrate around the first dykes and dams 191 and the second dykes and dams 192 around pixel unit, first dike
Dam 191 is arranged close to the pixel unit, and second dykes and dams 192 are in first dykes and dams 191 far from the pixel unit one
Side setting；And
More than one is formed at least one dykes and dams in first dykes and dams 191 and second dykes and dams 192 to open
Mouthful.
To sum up, a kind of OLED display panel provided in this embodiment is recessed by the one or more being arranged on dykes and dams,
Prevent the spilling of organic gel when due to inkjet printing organic film, reduce because organic film it is excessive caused by TFE package failure, point
Stress when screen body bending has been dissipated, while having enhanced inorganic layer adhesive force.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book
With the other embodiments of understanding.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of OLED display panel, which is characterized in that fixed including substrate and the hearth electrode being formed on the substrate, pixel
Adopted layer, functional layer, top electrode and thin-film encapsulation layer；The pixel defining layer is formed with several pixel openings, is located at the pixel
Hearth electrode, functional layer and top electrode in opening constitute pixel unit；It is also formed on the dead space of the OLED display panel
There are several recess formed by laser boring mode, the thin-film encapsulation layer fills the recess.
2. OLED display panel as described in claim 1, which is characterized in that top of the recess above pixel defining layer
Electrode and functional layer.
3. OLED display panel as claimed in claim 2, which is characterized in that the OLED display panel further includes being formed in institute
The planarization layer on substrate is stated, the hearth electrode is formed on the planarization layer；The recess is above pixel defining layer
Top electrode and functional layer after, also extend through the pixel defining layer of segment thickness, alternatively, it is described recess also extend through full depth
The planarization layer of pixel defining layer and segment thickness or full depth.
4. OLED display panel as claimed in any one of claims 1-3, which is characterized in that at least partly around pixel unit
Pixel defining layer at be formed with the recess.
5. OLED display panel as claimed in any one of claims 1-3, which is characterized in that the picture around each pixel unit
One or more recess are formed at plain definition layer.
6. OLED display panel as claimed in any one of claims 1-3, which is characterized in that at least partly in pixel defining layer
Side is formed with boss, and the recess is at least partly formed at boss.
7. OLED display panel as claimed in any one of claims 1-3, which is characterized in that be formed with one at each boss
Or multiple recess.
8. OLED display panel as claimed in any one of claims 1-3, which is characterized in that the shape of the recess is cylinder
One kind or any combination thereof in body, Elliptic Cylinder, rotary table, inverted round stage, cuboid or square.
9. a kind of OLED display panel preparation method characterized by comprising
One substrate is provided, hearth electrode, pixel defining layer, functional layer, top electrode, the pixel defining layer are formed on the substrate
Several pixel openings are formed with, the hearth electrode, functional layer and top electrode in the pixel openings constitute pixel unit；
Several recess are formed on the dead space of OLED display panel by laser boring mode；And
Thin-film encapsulation layer is formed on the substrate, and the thin-film encapsulation layer fills the recess.
10. OLED display panel preparation method as claimed in claim 9, which is characterized in that use light shield shading, and with laser
Full plate scanning is carried out, the film layer of target area is smashed through the laser of light shield and is smashed a little to be formed, described smash constitutes an institute
State recess.
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