CN107170778B - Flexible substrate preparation method, flexible substrate, display panel and display device - Google Patents
Flexible substrate preparation method, flexible substrate, display panel and display device Download PDFInfo
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- CN107170778B CN107170778B CN201710333297.7A CN201710333297A CN107170778B CN 107170778 B CN107170778 B CN 107170778B CN 201710333297 A CN201710333297 A CN 201710333297A CN 107170778 B CN107170778 B CN 107170778B
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- 239000000758 substrate Substances 0.000 title claims abstract description 171
- 238000002360 preparation method Methods 0.000 title abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 169
- 238000000034 method Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 28
- 229920001721 polyimide Polymers 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- -1 polyethylene naphthalate Polymers 0.000 claims description 6
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 3
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 29
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 12
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
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- 238000000151 deposition Methods 0.000 description 6
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- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
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- 239000001301 oxygen Substances 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
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- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
Abstract
The application discloses a flexible substrate preparation method, a flexible substrate, a display panel and a display device, which are used for avoiding or slowing down the phenomenon of residual bubbles in the flexible substrate and further improving the production yield of products. The embodiment of the application provides a preparation method of a flexible substrate, which comprises the following steps: disposing a first flexible substrate layer over a glass substrate; disposing a first buffer layer over the first flexible substrate layer; arranging an opening on the first buffer layer; a second flexible substrate layer is disposed over the first buffer layer.
Description
Technical Field
The application relates to the technical field of display, in particular to a flexible substrate preparation method, a flexible substrate, a display panel and a display device.
Background
The flexible display device is a display device manufactured and formed on the basis of a flexible substrate. The flexible display device has the characteristics of being curled, wide in visual angle, convenient to carry and the like, so that the flexible display device has wide application prospect and good market potential.
In the prior art, a single-layer flexible substrate includes a flexible substrate and a buffer layer located on the flexible substrate, and the preparation process is simple, but the water-blocking and oxygen-blocking effects are poor, and water and oxygen slowly permeate into an Electroluminescent device of a display panel from the bottom of the flexible substrate, so that an Electroluminescent (EL) material in the Electroluminescent device fails, and the Electroluminescent device is poor in operational reliability. In order to better block water and oxygen, a flexible substrate with a double-layer flexible substrate film is generally adopted, and the preparation process of the flexible substrate with the double-layer flexible substrate film is as follows: 1. coating a first layer of flexible substrate material, carrying out low-pressure drying treatment and annealing treatment, curing to form a first layer of flexible substrate film, and cleaning the cured film; 2. depositing a first silicon oxide layer and an amorphous silicon layer on the first flexible substrate film layer in sequence by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method; 3. coating a second layer of flexible substrate material on the amorphous silicon layer, carrying out low-pressure drying treatment and annealing treatment, curing to form a second layer of flexible substrate film layer, and cleaning the cured film layer; 4. and depositing a second silicon oxide layer on the second flexible substrate film layer by adopting a PECVD method. However, in the flexible substrate with the double-layer flexible substrate prepared by the above process, in the subsequent process of setting the display device, for example, under a high temperature condition, the gas in the first layer of flexible substrate film layer cannot be discharged in time, and bubbles are easily remained at the second layer of flexible substrate, thereby affecting the manufacturing yield of the display panel.
Disclosure of Invention
The embodiment of the application provides a flexible substrate preparation method, a flexible substrate, a display panel and a display device, which are used for avoiding or slowing down the phenomenon of residual bubbles in the flexible substrate, and further improving the manufacturing yield of products.
The embodiment of the application provides a preparation method of a flexible substrate, which comprises the following steps:
disposing a first flexible substrate layer over a glass substrate;
disposing a first buffer layer over the first flexible substrate layer;
arranging an opening on the first buffer layer;
a second flexible substrate layer is disposed over the first buffer layer.
According to the preparation method of the flexible substrate, due to the fact that the opening is formed in the first buffer layer, under the high-temperature environment, gas in the flexible substrate can be timely discharged through the opening area, the phenomenon that bubbles are remained in the flexible substrate can be avoided or slowed down, and the production yield of products can be improved.
Preferably, the second flexible substrate layer and the first flexible substrate layer are in contact through the opening.
Preferably, the opening is disposed in a non-display region of the flexible substrate.
Preferably, the first buffer layer includes: the flexible substrate comprises a first buffer sublayer and an adhesive layer located on the first buffer sublayer, and in the direction perpendicular to the flexible substrate, projections of openings in the first buffer sublayer and the adhesive layer are overlapped.
Preferably, after disposing the second flexible substrate layer over the first buffer layer, the method further comprises: a second buffer layer is disposed over the second flexible substrate layer.
Preferably, the material of the first flexible substrate layer and the second flexible substrate layer comprises one or a combination of the following materials: polyethylene naphthalate, polyethylene terephthalate, polyethersulfone, polyimide, polycarbonate, olefin-exchange copolymer, liquid crystal polymer;
the materials of the first buffer sublayer and the second buffer layer comprise one or a combination of the following materials: silicon oxide, silicon nitride;
the material of the bonding layer comprises one or a combination of the following materials: amorphous silicon, indium tin oxide;
preferably, after disposing the second buffer layer over the second flexible substrate layer, the method further comprises: a planarization layer is disposed over the second buffer layer.
The flexible substrate provided by the embodiment of the application is prepared by the flexible substrate preparation method provided by the embodiment of the application.
The display panel provided by the embodiment of the application comprises the flexible substrate provided by the embodiment of the application and a display device layer positioned on the flexible substrate.
The display device provided by the embodiment of the application comprises the display panel provided by the embodiment of the application.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing a flexible substrate according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a flexible substrate according to an embodiment of the present disclosure;
fig. 3 is a schematic view illustrating a position of a first flexible substrate opening according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating a second flexible substrate opening arrangement according to an embodiment of the present disclosure;
fig. 5 is a schematic view illustrating a position of disposing a third flexible substrate opening according to an embodiment of the present disclosure;
fig. 6 is a schematic flow chart of another method for manufacturing a flexible substrate according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of another flexible substrate according to an embodiment of the present disclosure.
Detailed Description
The embodiment of the application provides a flexible substrate preparation method, a flexible substrate, a display panel and a display device, which are used for avoiding or slowing down the phenomenon of residual bubbles in the flexible substrate, and further improving the manufacturing yield of products.
An embodiment of the present application provides a method for manufacturing a flexible substrate, as shown in fig. 1, the method includes:
s101, arranging a first flexible substrate layer on a glass substrate;
s102, arranging a first buffer layer on the first flexible substrate layer;
s103, forming an opening in the first buffer layer;
and S104, arranging a second flexible substrate layer on the first buffer layer.
According to the preparation method of the flexible substrate, the first buffer layer is provided with the opening, so that the flexible substrate is in a high-temperature environment, gas in the flexible substrate can be timely discharged through the opening area, the phenomenon of residual bubbles in the flexible substrate can be avoided or slowed down, and the production yield of products can be improved.
Preferably, the second flexible substrate layer and the first flexible substrate layer are in contact through the opening.
It should be noted that the second flexible substrate layer and the first flexible substrate layer are in contact through the opening, which is equivalent to that at the opening part, the flexible substrate only comprises the flexible substrate, and gas is easily discharged at the area, so that in a high-temperature environment, the gas in the flexible substrate, especially the first flexible substrate layer, can be discharged through the opening area in time, thereby avoiding or slowing down the phenomenon of residual bubbles in the flexible substrate, and further improving the product production yield.
Preferably, the opening is disposed in a non-display region of the flexible substrate.
As shown in fig. 2, the flexible substrate manufactured by the method for manufacturing a flexible substrate according to the embodiment of the present application includes: the glass substrate comprises a glass substrate 1, a first flexible substrate layer 2 located on the glass substrate 1, a first buffer layer 3 located on the first flexible substrate layer 2, and a second flexible substrate layer 5 located on the first buffer layer 3, wherein an opening 4 is formed in the first buffer layer 3.
The flexible substrate preparation method provided by the embodiment of the application has no limitation on the shape and the area of the opening formed in the first buffer layer, and the opening is formed in the first buffer layer, so that gas generated by the first flexible substrate layer 2 can be timely discharged through the opening region in a high-temperature environment, and the phenomenon of residual bubbles in the flexible substrate can be avoided or slowed down. The opening is arranged in the non-display area of the flexible substrate, and the shape of the opening is, as shown in fig. 3, 4 and 5, when viewed from the front, the area where the first flexible substrate layer 2 is exposed is the area where the opening is arranged in the first buffer layer, and the opening is arranged in the area outside the display area 6 of the flexible substrate, as shown in fig. 3 and 4, the opening may be arranged in a partial area outside the display area 6, for example, as shown in fig. 3, a rectangular opening 4 (or referred to as an annular opening) surrounding the display area 6 is arranged at the periphery of the display area 6 of the first buffer layer 3, and as shown in fig. 2, a cross-sectional view along AA' shown in fig. 3. Of course, a plurality of smaller circular openings 15 may be provided at the periphery of the display region of the first buffer layer 3, as shown in fig. 4, or, as shown in fig. 5, the first buffer layer outside the whole display region 6 may be disposed, that is, the first buffer layer corresponding to the whole non-display region portion is provided as an opening, or the first buffer layer covers only the display region portion. It should be noted that the second flexible substrate layer is not shown in fig. 3 and 4 for illustrating the shape of the opening and the position of the flexible substrate. In addition, fig. 2 to 5 illustrate the flexible substrate arrangement method provided in the embodiment of the present application by taking a case where one display panel is fabricated on one glass substrate as an example, and of course, in actual production, a plurality of display panels may be fabricated on one glass substrate, and then cut into independent display panels.
It should be noted that, both the first flexible substrate layer and the first buffer layer can achieve the effects of blocking water and oxygen, and the method for preparing the flexible substrate provided by the embodiment of the application, because the first buffer layer is provided with the opening, the first flexible substrate layer is contacted with the second flexible substrate layer at the position of the opening, namely, the open area has no first buffer layer, but the water-blocking and oxygen-blocking effect of the open area is not good than that of the area without the open, so that the opening is arranged in the non-display area of the flexible substrate, the flexible substrate is subsequently utilized to prepare the display panel, because the display panel finished product only reserves the flexible substrate of the display area part, the opening is arranged in the non-display area of the flexible substrate, the phenomenon of residual bubbles in the flexible substrate can be avoided or slowed down in the process of preparing the display panel, and the water-blocking and oxygen-blocking effects of the display panel are not influenced.
Preferably, the first buffer layer includes: the flexible substrate comprises a first buffer sublayer and an adhesive layer located on the first buffer sublayer, and in the direction perpendicular to the flexible substrate, projections of openings in the first buffer sublayer and the adhesive layer are overlapped.
According to the preparation method of the flexible substrate, the bonding layer is arranged between the first buffer sublayer and the second flexible substrate layer, so that the bonding effect between the first buffer sublayer and the second flexible substrate layer can be enhanced.
Preferably, after disposing the second flexible substrate layer over the first buffer layer, the method further comprises: a second buffer layer is disposed over the second flexible substrate layer.
Preferably, the material of the first flexible substrate layer and the second flexible substrate layer comprises one or a combination of the following materials: polyethylene naphthalate, polyethylene terephthalate, polyethersulfone, polyimide, polycarbonate, olefin-exchange copolymer, and liquid crystal polymer. Of course, other flexible materials may be used for the first and second flexible substrate layers. It should be noted that, in the method for manufacturing a flexible substrate provided in the embodiment of the present application, the first flexible substrate layer and the second flexible substrate layer may be made of the same flexible material, or may be made of different flexible materials.
The material of the first buffer sublayer and the second buffer layer may be, for example, an inorganic material, and preferably, the material of the first buffer sublayer and the second buffer layer includes one or a combination of the following materials: silicon oxide (SiO)2) And silicon nitride. Of course, the first buffer sub-layer and the second buffer sub-layer may also be made of other inorganic materials that can block water and oxygen. It should be noted that, in the method for manufacturing a flexible substrate provided in the embodiment of the present application, the first buffer sublayer and the second buffer sublayer may be made of the same material or different materials.
Preferably, the material of the adhesive layer comprises one or a combination of the following materials: amorphous silicon (a-Si), Indium Tin Oxide (ITO). Of course, other materials that can enhance the adhesion between the first buffer sub-layer and the second flexible substrate layer can be used for the adhesive layer.
Preferably, after disposing the second buffer layer over the second flexible substrate layer, the method further comprises: a planarization layer is disposed over the second buffer layer.
Preferably, the planarization layer comprises a silicon nitride (SiN) layer and SiO over the silicon nitride layer2And (3) a layer.
The method for preparing the flexible substrate provided by the embodiment of the present application is exemplified by taking the first flexible substrate layer and the second flexible substrate layer as an example, the first buffer sublayer and the second buffer layer are made of polyimide, the first buffer sublayer and the second buffer layer are made of silicon oxide, the bonding layer is made of amorphous silicon, and the planarization layer includes silicon nitride and silicon oxide, as shown in fig. 6, the method for preparing the flexible substrate includes the following steps:
s601, coating polyimide glue solution on a glass substrate, carrying out low-pressure drying (H-VCD) treatment on the polyimide glue solution, then carrying out annealing treatment at the temperature of 300-400 ℃, curing to form a first polyimide film layer, and cleaning the first polyimide film layer;
wherein the thickness of the polyimide film is 5 um-15 um;
s602, depositing a first SiO layer with a thickness range of 5500-6000A by adopting a PECVD process2A film layer of SiO on the first layer2Depositing an a-Si film layer with the thickness ranging from 50 to 100A on the film layer by adopting a PECVD process;
s603, for the first SiO layer2Forming an opening on the film layer and the a-Si film layer by adopting a one-step composition process;
s604, coating a second layer of polyimide glue solution, carrying out H-VCD treatment on the second layer of polyimide glue solution, then carrying out annealing treatment at the temperature of 300-400 ℃, curing to form a second layer of polyimide film, and cleaning the second layer of polyimide film;
wherein the thickness of the polyimide film is 5 um-15 um;
s605, depositing a second SiO layer with a thickness range of 5500-6000A by adopting a PECVD method2A film layer;
s606, adopting a PECVD method to deposit a SiN film layer with the thickness ranging from 500A to 1500A;
s607, depositing a third SiO2 film layer with the thickness ranging from 2500A to 3000A on the SiN film layer.
The flexible substrate provided by the embodiment of the application is prepared by the flexible substrate preparation method provided by the embodiment of the application.
For example, when the method for manufacturing a flexible substrate shown in fig. 6 is used, the flexible substrate provided in the embodiment of the present application, as shown in fig. 7, includes: a glass substrate 1, a first polyimide film 7 on the glass substrate 1, a first SiO layer on the first polyimide film 72 Film layer 8, SiO in the first layer2a-Si film on the film layer 8A layer 9, a second polyimide film 10 on the a-Si film layer 9, and a second SiO layer on the second polyimide film 102A film layer 11 of SiO located on the second layer2A SiN film layer 12 on the SiN film layer 11, and a third SiO layer on the SiN film layer 122 Film layer 13 of SiO in the first layer2The film 8 and the a-Si film 9 are provided with openings 4 so that the second polyimide film 10 and the first polyimide film 7 are in contact in the area of the openings.
The display panel provided by the embodiment of the application comprises the flexible substrate provided by the embodiment of the application and a display device layer positioned on the flexible substrate.
In the manufacturing of the display panel, after the flexible basic preparation step S607 shown in fig. 6, a Thin Film Transistor (TFT) device needs to be disposed on the buffer layer, an electroluminescence process and a subsequent encapsulation process need to be completed, and then the flexible substrate needs to be peeled off from the glass substrate, for example, the flexible substrate may be peeled off from the glass substrate by laser irradiation.
For example, the display panel provided in the embodiments of the present application may be an Organic Light Emitting Diode (OLED) display panel.
The display device provided by the embodiment of the application comprises the display panel provided by the embodiment of the application.
For example, the display device provided in the embodiments of the present application may be a mobile phone, a computer, a television, or the like.
In summary, according to the flexible substrate manufacturing method, the flexible substrate, the display panel and the display device provided by the embodiment of the application, since the opening is formed in the first buffer layer, the flexible substrate is in a high-temperature environment, gas in the flexible substrate can be timely discharged through the opening area, so that the phenomenon of residual bubbles in the flexible substrate can be avoided or slowed down, and the manufacturing yield of products can be improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (10)
1. A method for preparing a flexible substrate is characterized by comprising the following steps:
disposing a first flexible substrate layer over a glass substrate;
disposing a first buffer layer over the first flexible substrate layer;
forming a plurality of spaced openings in the first buffer layer, each opening having a dimension in a direction parallel to a side of the display region that is less than a length of the side of the display region;
a second flexible substrate layer is disposed over the first buffer layer.
2. The method of claim 1, wherein the second flexible substrate layer and the first flexible substrate layer are contacted through the opening.
3. The method of claim 1, wherein the opening is disposed in a non-display area of the flexible substrate.
4. The method of claim 1, wherein the first buffer layer comprises: the flexible substrate comprises a first buffer sublayer and an adhesive layer located on the first buffer sublayer, and in the direction perpendicular to the flexible substrate, projections of openings in the first buffer sublayer and the adhesive layer are overlapped.
5. The method of claim 4, wherein after disposing the second flexible substrate layer over the first buffer layer, the method further comprises: a second buffer layer is disposed over the second flexible substrate layer.
6. The method of claim 5, wherein the material of the first flexible substrate layer and the second flexible substrate layer comprises one or a combination of the following materials: polyethylene naphthalate, polyethylene terephthalate, polyethersulfone, polyimide, polycarbonate, olefin-exchange copolymer, liquid crystal polymer;
the materials of the first buffer sublayer and the second buffer layer comprise one or a combination of the following materials: silicon oxide, silicon nitride;
the material of the bonding layer comprises one or a combination of the following materials: amorphous silicon, indium tin oxide.
7. The method of claim 5, wherein after disposing the second buffer layer over the second flexible substrate layer, the method further comprises: a planarization layer is disposed over the second buffer layer.
8. A flexible substrate, characterized in that it is produced by the method of any one of claims 1 to 7.
9. A display panel comprising the flexible substrate of claim 8 and a display device layer over the flexible substrate.
10. A display device characterized by comprising the display panel according to claim 9.
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CN107768413B (en) * | 2017-10-26 | 2020-12-01 | 京东方科技集团股份有限公司 | Flexible display substrate, display device and manufacturing method thereof |
KR102526111B1 (en) * | 2017-12-27 | 2023-04-25 | 엘지디스플레이 주식회사 | Display device |
CN108198822B (en) * | 2017-12-28 | 2020-08-04 | 武汉华星光电半导体显示技术有限公司 | Flexible display panel repairing method and device and flexible display panel |
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