TWI675355B - Flexible display panel - Google Patents
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- TWI675355B TWI675355B TW107124796A TW107124796A TWI675355B TW I675355 B TWI675355 B TW I675355B TW 107124796 A TW107124796 A TW 107124796A TW 107124796 A TW107124796 A TW 107124796A TW I675355 B TWI675355 B TW I675355B
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- 239000000463 material Substances 0.000 claims description 29
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- 229910021332 silicide Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
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- 239000011787 zinc oxide Substances 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 239000004697 Polyetherimide Substances 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
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- 238000001127 nanoimprint lithography Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一種可撓式顯示面板包括第一可撓層、第二可撓層、緩衝層以及元件層。緩衝層夾置於第一可撓層與第二可撓層之間，並具有多個通孔，其中這些通孔從第一可撓層延伸至第二可撓層，而第一可撓層與第二可撓層分別覆蓋各個通孔的兩端口。各個通孔的寬度小於2微米。元件層配置於第二可撓層，其中第二可撓層位於元件層與緩衝層之間。A flexible display panel includes a first flexible layer, a second flexible layer, a buffer layer, and an element layer. The buffer layer is sandwiched between the first flexible layer and the second flexible layer and has a plurality of through holes, wherein the through holes extend from the first flexible layer to the second flexible layer, and the first flexible layer And the second flexible layer respectively cover two ports of each through hole. The width of each via is less than 2 microns. The element layer is disposed on the second flexible layer, wherein the second flexible layer is located between the element layer and the buffer layer.
Description
本發明是有關於一種顯示器，且特別是有關於一種可撓式顯示面板。The present invention relates to a display, and more particularly to a flexible display panel.
現有的可撓式顯示面板通常包括多層彼此堆疊的膜層，其中這些膜層的材料並不完全相同。有的膜層是由有機材料所製成，而有的膜層是由無機材料所製成。在可撓式顯示面板的製造過程中，這些材料不同的膜層難免會被加熱，從而可能出現缺陷，例如氣泡或翹曲（warpage）。上述缺陷會破壞可撓式顯示面板的畫面品質，所以需要進行修復（repairment）以消除缺陷。倘若缺陷過多或無法消除，可撓式顯示面板必須進行重工（rework），甚至被迫報廢。Existing flexible display panels generally include a plurality of film layers stacked on each other, wherein the materials of these film layers are not completely the same. Some film layers are made of organic materials, while some film layers are made of inorganic materials. During the manufacturing process of the flexible display panel, different film layers of these materials will inevitably be heated, and defects such as air bubbles or warpage may occur. The above defects may damage the picture quality of the flexible display panel, so repairs are needed to eliminate the defects. If there are too many defects or cannot be eliminated, the flexible display panel must be reworked and even forced to be scrapped.
本發明提供一種可撓式顯示面板，其所包括的第一可撓層、第二可撓層以及緩衝層能幫助減少或消除上述缺陷（例如氣泡或翹曲）。The present invention provides a flexible display panel. The first flexible layer, the second flexible layer, and the buffer layer included in the flexible display panel can help reduce or eliminate the above defects (such as bubbles or warpage).
本發明至少一實施例所提供的可撓式顯示面板包括第一可撓層、第二可撓層、緩衝層以及元件層。緩衝層夾置於第一可撓層與第二可撓層之間，並具有多個通孔，其中這些通孔從第一可撓層延伸至第二可撓層，而第一可撓層與第二可撓層分別覆蓋各個通孔的兩端口。各個通孔的寬度小於2微米。元件層配置於第二可撓層上，其中第二可撓層位於元件層與緩衝層之間。The flexible display panel provided by at least one embodiment of the present invention includes a first flexible layer, a second flexible layer, a buffer layer, and an element layer. The buffer layer is sandwiched between the first flexible layer and the second flexible layer and has a plurality of through holes, wherein the through holes extend from the first flexible layer to the second flexible layer, and the first flexible layer And the second flexible layer respectively cover two ports of each through hole. The width of each via is less than 2 microns. The element layer is disposed on the second flexible layer, wherein the second flexible layer is located between the element layer and the buffer layer.
在本發明至少一實施例中，上述緩衝層的孔隙率（porosity）介於10%至90%之間。In at least one embodiment of the present invention, the porosity of the buffer layer is between 10% and 90%.
在本發明至少一實施例中，上述第一可撓層與第二可撓層皆未填入於這些通孔內。In at least one embodiment of the present invention, the first flexible layer and the second flexible layer are not filled in the through holes.
在本發明至少一實施例中，上述第一可撓層與第二可撓層至少一者填滿這些通孔。In at least one embodiment of the present invention, at least one of the first flexible layer and the second flexible layer fills the through holes.
在本發明至少一實施例中，上述元件層具有顯示區，而顯示區對應於緩衝層投影出投影區域，其中部分這些通孔分布於投影區域內。In at least one embodiment of the present invention, the above-mentioned element layer has a display area, and the display area corresponds to the projection area projected by the buffer layer, and some of these through holes are distributed in the projection area.
在本發明至少一實施例中，這些通孔週期性地分布在第一可撓層與第二可撓層之間。In at least one embodiment of the present invention, the through holes are periodically distributed between the first flexible layer and the second flexible layer.
在本發明至少一實施例中，上述緩衝層的形狀為網狀。In at least one embodiment of the present invention, the shape of the buffer layer is mesh.
在本發明至少一實施例中，上述緩衝層的厚度介於1000埃（Ångström，Å）至10000埃之間。In at least one embodiment of the present invention, the thickness of the buffer layer is between 1000 Angstrom (Å) and 10,000 Angstrom.
在本發明至少一實施例中，上述第一可撓層的厚度與第二可撓層的厚度實質上相等。In at least one embodiment of the present invention, the thickness of the first flexible layer and the thickness of the second flexible layer are substantially equal.
在本發明至少一實施例中，上述緩衝層的材料為陶瓷、金屬或合金。In at least one embodiment of the present invention, a material of the buffer layer is ceramic, metal, or alloy.
在本發明至少一實施例中，上述緩衝層的材料選自於由氧化物、碳化物、氮化物、硼化物以及矽化物所組成的族群。In at least one embodiment of the present invention, the material of the buffer layer is selected from the group consisting of oxide, carbide, nitride, boride, and silicide.
本發明其他一實施例所提供的可撓式顯示面板包括第一可撓層、第二可撓層、緩衝結晶層以及元件層。緩衝結晶層夾置於第一可撓層與第二可撓層之間，並具有至少晶粒邊界（grain boundary），其中至少一晶粒邊界連通於第一可撓層與第二可撓層之間。元件層配置於第二可撓層，其中第二可撓層位於元件層與緩衝結晶層之間。A flexible display panel provided by another embodiment of the present invention includes a first flexible layer, a second flexible layer, a buffer crystal layer, and an element layer. The buffer crystal layer is sandwiched between the first flexible layer and the second flexible layer, and has at least a grain boundary, wherein at least one grain boundary is connected to the first flexible layer and the second flexible layer. between. The element layer is disposed on the second flexible layer, wherein the second flexible layer is located between the element layer and the buffer crystal layer.
在本發明至少一實施例中，上述緩衝結晶層的厚度介於1000埃至10000埃之間。In at least one embodiment of the present invention, the thickness of the buffer crystal layer is between 1000 Angstroms and 10,000 Angstroms.
在本發明至少一實施例中，上述第一可撓層的厚度與第二可撓層的厚度實質上相等。In at least one embodiment of the present invention, the thickness of the first flexible layer and the thickness of the second flexible layer are substantially equal.
在本發明至少一實施例中，上述緩衝結晶層的材料選自於由氧化物、碳化物、氮化物、硼化物以及矽化物所組成的族群。In at least one embodiment of the present invention, the material of the buffer crystal layer is selected from the group consisting of oxide, carbide, nitride, boride, and silicide.
在本發明至少一實施例中，上述緩衝結晶層的材料選自於由銦錫氧化物（Indium Tin Oxide，ITO）、銦鋅氧化物（Indium Zinc Oxide，IZO）以及氧化銦鎵鋅（Indium Gallium Zinc Oxide，IGZO）所組成的族群。In at least one embodiment of the present invention, the material of the buffer crystal layer is selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (Indium Gallium zinc). Zinc Oxide (IGZO).
基於上述，利用第一可撓層與第二可撓層，可幫助減少翹曲出現的機率，而緩衝層所具有的這些通孔以及緩衝結晶層所具有的至少一晶粒邊界能幫助氣體散逸，以抑制氣泡的形成。如此，利用第一可撓層、第二可撓層以及緩衝層，可幫助減少或消除翹曲與氣泡等缺陷，進而有助於提升良率。Based on the above, the use of the first flexible layer and the second flexible layer can help reduce the chance of warping, and the through holes in the buffer layer and at least one grain boundary of the buffer crystal layer can help the gas to escape. To suppress the formation of air bubbles. In this way, the use of the first flexible layer, the second flexible layer, and the buffer layer can help reduce or eliminate defects such as warpage and bubbles, and thus help improve yield.
為讓本發明的特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式，作詳細說明如下。In order to make the features and advantages of the present invention more comprehensible, embodiments are described below in detail with reference to the accompanying drawings, as follows.
圖1A是本發明至少一實施例的可撓式顯示面板的俯視示意圖，而圖1B是圖1A中沿線1B-1B剖面所繪製的剖面示意圖。請參閱圖1A與圖1B，請參閱圖1A與圖1B，可撓式顯示面板100包括第一可撓層110、第二可撓層120、緩衝層130a與元件層140，其中第一可撓層110、第二可撓層120、緩衝層130a與元件層140彼此堆疊。緩衝層130a夾置於第一可撓層110與第二可撓層120之間，而第二可撓層120位於元件層140與緩衝層130a之間。元件層140配置於於第二可撓層120。例如，元件層140可以直接製造在第二可撓層120上，但不以此為限，又例如元件層140可先製造完成，之後可利用黏膠或其他適當固著元件而固定於第二可撓層120。FIG. 1A is a schematic top view of a flexible display panel according to at least one embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view drawn along a line 1B-1B in FIG. 1A. Please refer to FIG. 1A and FIG. 1B, and refer to FIG. 1A and FIG. 1B. The flexible display panel 100 includes a first flexible layer 110, a second flexible layer 120, a buffer layer 130 a, and an element layer 140. The layer 110, the second flexible layer 120, the buffer layer 130a, and the element layer 140 are stacked on each other. The buffer layer 130a is sandwiched between the first flexible layer 110 and the second flexible layer 120, and the second flexible layer 120 is located between the element layer 140 and the buffer layer 130a. The element layer 140 is disposed on the second flexible layer 120. For example, the element layer 140 may be directly manufactured on the second flexible layer 120, but is not limited thereto. For example, the element layer 140 may be manufactured first, and then may be fixed to the second layer by using adhesive or other appropriate fixing components. Flexible layer 120.
第一可撓層110與第二可撓層120兩者的材料可為有機材料，例如聚醯亞胺（Polyimide，PI）、聚乙烯醚二甲酸（Polyethylene Ether Phthalate）、聚萘二甲酸乙二醇酯（Polyethylene Naphthalate，PEN）、聚碳酸酯（Polycarbonate，PC）、聚芳香酯（polyarylate，PAR）、聚醚醯亞胺（Polyetherimide）或聚醚碸（Polyether Sulfone，PES），或是以上有機材料的任意組合。第一可撓層110與第二可撓層120可由同一種有機材料來製成，所以第一可撓層110與第二可撓層120兩者的材料可彼此相同。不過，在至少一實施例中，第一可撓層110與第二可撓層120兩者的材料也可彼此不同，所以第一可撓層110與第二可撓層120兩者材料不限定要相同。第一可撓層110與第二可撓層120可以經由塗佈與烘烤來形成，其中在烘烤以前，塗佈好的第一可撓層110與第二可撓層120可為流體（fluid），而烘烤能固化第一可撓層110與第二可撓層120。The materials of both the first flexible layer 110 and the second flexible layer 120 may be organic materials, such as Polyimide (PI), Polyethylene Ether Phthalate, and Polyethylene Naphthalate. Polyethylene Naphthalate (PEN), Polycarbonate (PC), Polyarylate (PAR), Polyetherimide or Polyether Sulfone (PES), or above organic Any combination of materials. The first flexible layer 110 and the second flexible layer 120 may be made of the same organic material, so the materials of both the first flexible layer 110 and the second flexible layer 120 may be the same as each other. However, in at least one embodiment, the materials of both the first flexible layer 110 and the second flexible layer 120 may be different from each other, so the materials of the first flexible layer 110 and the second flexible layer 120 are not limited. Be the same. The first flexible layer 110 and the second flexible layer 120 may be formed by coating and baking. Before the baking, the coated first flexible layer 110 and the second flexible layer 120 may be fluid ( fluid), and baking can cure the first flexible layer 110 and the second flexible layer 120.
緩衝層130a具有多個通孔H13a，其中這些通孔H13a從第一可撓層110延伸至第二可撓層120，而第一可撓層110與第二可撓層120分別覆蓋各個通孔H13a的兩端口。第一可撓層110與第二可撓層120至少一者可填滿這些通孔H13a。以圖1B為例，第二可撓層120填滿這些通孔H13a，但不以此為限。The buffer layer 130a has a plurality of through-holes H13a, wherein the through-holes H13a extend from the first flexible layer 110 to the second flexible layer 120, and the first flexible layer 110 and the second flexible layer 120 respectively cover each of the through-holes. Two ports of H13a. At least one of the first flexible layer 110 and the second flexible layer 120 may fill the through holes H13a. Taking FIG. 1B as an example, the second flexible layer 120 fills the through holes H13a, but is not limited thereto.
元件層140為可撓式顯示面板100中的影像顯示元件，並能顯示影像。舉例而言，元件層140具有顯示區141。元件層140所顯示的影像會出現在顯示區141內，以供使用者觀賞，其中元件層140可以是微型發光二極體陣列（Micro Light Emitting Diode Array，μLED Array）或有機發光二極體（Organic LED，OLED）。由於第一可撓層110、第二可撓層120、緩衝層130a以及元件層140彼此堆疊，因此顯示區141可在第一可撓層110、第二可撓層120或緩衝層130a對應投影出投影區域。例如，顯示區141對應於緩衝層130a投影出投影區域P1，如圖1B所示。部分這些通孔H13a分布於投影區域P1內。The element layer 140 is an image display element in the flexible display panel 100 and can display an image. For example, the element layer 140 has a display area 141. The image displayed by the element layer 140 will appear in the display area 141 for viewing by the user. The element layer 140 may be a micro light emitting diode array (Micro Light Emitting Diode Array, μLED Array) or an organic light emitting diode ( Organic LED, OLED). Since the first flexible layer 110, the second flexible layer 120, the buffer layer 130a, and the element layer 140 are stacked on each other, the display area 141 can be correspondingly projected on the first flexible layer 110, the second flexible layer 120, or the buffer layer 130a. Out of the projection area. For example, the display area 141 corresponds to the projection area P1 projected by the buffer layer 130a, as shown in FIG. 1B. Some of these through holes H13a are distributed in the projection area P1.
在圖1B所示的實施例中，第二可撓層120的厚度T12可大於第一可撓層110的厚度T11，其中厚度T12與厚度T11之間的厚度差可約等於緩衝層130a的厚度T13。緩衝層130a的厚度T13可介於1000埃至10000埃之間，而第一可撓層110與第二可撓層120的厚度T11與T12可介於5微米至20微米之間。因此，厚度T11與T12其中一者明顯大於厚度T13，且在圖1B的實施例中，第二可撓層120的厚度T12可相近於第一可撓層110的厚度T11。In the embodiment shown in FIG. 1B, the thickness T12 of the second flexible layer 120 may be greater than the thickness T11 of the first flexible layer 110, wherein the thickness difference between the thickness T12 and the thickness T11 may be approximately equal to the thickness of the buffer layer 130a. T13. The thickness T13 of the buffer layer 130a may be between 1000 angstroms and 10,000 angstroms, and the thicknesses T11 and T12 of the first flexible layer 110 and the second flexible layer 120 may be between 5 micrometers and 20 micrometers. Therefore, one of the thicknesses T11 and T12 is significantly larger than the thickness T13, and in the embodiment of FIG. 1B, the thickness T12 of the second flexible layer 120 may be similar to the thickness T11 of the first flexible layer 110.
由於第一可撓層110與第二可撓層120兩者的材料彼此相同，因此第一可撓層110與第二可撓層120兩者的熱膨脹係數也彼此相同。如此，在可撓式顯示面板100的製造過程中，相同材料的第一可撓層110與第二可撓層120能降低應力的影響，以幫助減少翹曲出現的機率。其次，由於第二可撓層120的厚度T12相近於第一可撓層110的厚度T11，因此相同材料的第一可撓層110與第二可撓層120兩者受熱所產生的形變量也會彼此相近，以更有效地減少翹曲出現的機率，甚至更可以消除翹曲，從而幫助提升良率。Since the materials of both the first flexible layer 110 and the second flexible layer 120 are the same as each other, the thermal expansion coefficients of the first flexible layer 110 and the second flexible layer 120 are also the same as each other. As such, during the manufacturing process of the flexible display panel 100, the first flexible layer 110 and the second flexible layer 120 of the same material can reduce the influence of stress to help reduce the chance of warping. Secondly, since the thickness T12 of the second flexible layer 120 is similar to the thickness T11 of the first flexible layer 110, the amount of deformation caused by the heating of both the first flexible layer 110 and the second flexible layer 120 of the same material is also Will be closer to each other to more effectively reduce the chance of warping, and even eliminate warping, thereby helping to improve yield.
在本實施例中，雖然第一可撓層110與第二可撓層120兩者的材料彼此相同，但在其他實施例中，第一可撓層110與第二可撓層120兩者也可選用熱膨脹係數彼此相似或相同，但種類不同的材料來製成。如此，第一可撓層110與第二可撓層120也能達到減少翹曲出現的功效。即使第一可撓層110與第二可撓層120兩者的熱膨脹係數明顯不同，但可利用第一可撓層110與第二可撓層120之間的厚度差來補償熱膨脹係數差異所產生的形變量，以減少翹曲出現的機率。因此，第一可撓層110與第二可撓層120兩者的材料並不限定要彼此相同，而兩者的厚度同樣也不限定要彼此相等。In this embodiment, although the materials of the first flexible layer 110 and the second flexible layer 120 are the same as each other, in other embodiments, both the first flexible layer 110 and the second flexible layer 120 are also Materials with similar or identical thermal expansion coefficients but different types can be selected. In this way, the first flexible layer 110 and the second flexible layer 120 can also achieve the effect of reducing the occurrence of warpage. Even if the thermal expansion coefficients of the first flexible layer 110 and the second flexible layer 120 are significantly different, the thickness difference between the first flexible layer 110 and the second flexible layer 120 can be used to compensate for the difference in thermal expansion coefficient To reduce the chance of warping. Therefore, the materials of the first flexible layer 110 and the second flexible layer 120 are not limited to be the same as each other, and the thicknesses of the two are also not limited to be the same as each other.
緩衝層130a的材料可為陶瓷、金屬或合金，且緩衝層130a的材料可選自於由氧化物、碳化物、氮化物、硼化物以及矽化物所組成的族群。例如，緩衝層130a的材料可以是二氧化矽、氮化矽、銦錫氧化物（ITO）、銦鋅氧化物（IZO）、氧化銦鎵鋅（IGZO）、氧化鋯（ZrO 2）或陽極氧化鋁（Anodic Aluminum Oxide，AAO），或是以上材料的任意組合。 The material of the buffer layer 130a may be ceramic, metal, or alloy, and the material of the buffer layer 130a may be selected from the group consisting of oxide, carbide, nitride, boride, and silicide. For example, the material of the buffer layer 130a may be silicon dioxide, silicon nitride, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zirconium oxide (ZrO 2 ), or anodization. Aluminum (Anodic Aluminum Oxide, AAO), or any combination of the above materials.
因此，緩衝層130a可以是導電體或絕緣體。此外，緩衝層130a可以是耐高溫的多孔性材料，其中緩衝層130a的孔隙率可介於10%至90%之間，而緩衝層130a的燃點或相變轉換溫度（phase transition temperature，例如熔點或玻璃轉換溫度）可大於500℃，即緩衝層130a能承受至少500℃高溫。Therefore, the buffer layer 130a may be a conductor or an insulator. In addition, the buffer layer 130a may be a high-temperature-resistant porous material, wherein the porosity of the buffer layer 130a may be between 10% and 90%, and the ignition point or phase transition temperature (such as the melting point) of the buffer layer 130a Or glass transition temperature) can be greater than 500 ° C, that is, the buffer layer 130a can withstand a high temperature of at least 500 ° C.
通孔H13a可利用奈米壓印（nanoimprint lithography）、電子束蝕刻（electron beam lithography）以及陽極電化學反應（anode electrochemical reaction）至少一種手段來形成。或者，也可調整製造緩衝層130a的參數來形成通孔H13a。具體而言，緩衝層130a可利用化學氣相沉積（Chemical Vapor Deposition，CVD）或物理氣相沉積（Physical Vapor Deposition，PVD）來形成，而在進行化學氣相沉積或物理氣相沉積的過程中，可以調整通入氣體的流量來形成通孔H13a。The through hole H13a can be formed by at least one of nanoimprint lithography, electron beam lithography, and anode electrochemical reaction. Alternatively, the parameters for manufacturing the buffer layer 130a may be adjusted to form the through hole H13a. Specifically, the buffer layer 130a may be formed by using chemical vapor deposition (CVD) or physical vapor deposition (PVD), and in the process of performing chemical vapor deposition or physical vapor deposition The through-hole H13a can be formed by adjusting the flow rate of the incoming gas.
由於通孔H13a可利用奈米壓印、電子束蝕刻或是調整製造緩衝層130a的參數來形成，因此各個通孔H13a的寬度W13可以小於2微米，其中2微米為現有光刻（photolithography）難以達到的尺寸。此外，所有通孔H13a全面性地分布於緩衝層130a內，而在顯示區141對應於緩衝層130a所投影出的投影區域P1中，部分這些通孔H13a分布於投影區域P1內，如圖1B所示。Because the through-hole H13a can be formed by nano-imprinting, electron beam etching, or adjusting the parameters of the manufacturing buffer layer 130a, the width W13 of each through-hole H13a can be less than 2 micrometers, of which 2 micrometers is difficult for existing photolithography. Reached size. In addition, all through holes H13a are completely distributed in the buffer layer 130a, and in the display area 141 corresponding to the projection area P1 projected by the buffer layer 130a, some of the through holes H13a are distributed in the projection area P1, as shown in FIG. 1B As shown.
在可撓式顯示面板100的製造過程中，由於緩衝層130a具有這些通孔H13a，且氣體分子能穿透第二可撓層120，因此在進行加熱製程中，緩衝層130a所產生的氣體可以從這些通孔H13a，並經由第二可撓層120散逸，其中此加熱製程例如是第二可撓層120，而烘烤第二可撓層120的溫度會大於或等於200℃。如此，這些通孔H13a能避免氣體累積在第一可撓層110與第二可撓層120之間，以抑制氣泡的形成，從而有助於提升良率。During the manufacturing process of the flexible display panel 100, since the buffer layer 130a has these through holes H13a, and gas molecules can penetrate the second flexible layer 120, the gas generated by the buffer layer 130a during the heating process can be Dissipate from the through holes H13a and pass through the second flexible layer 120. The heating process is, for example, the second flexible layer 120, and the temperature for baking the second flexible layer 120 is greater than or equal to 200 ° C. In this way, the through holes H13a can prevent gas from being accumulated between the first flexible layer 110 and the second flexible layer 120, so as to suppress the formation of bubbles, thereby helping to improve the yield.
圖1C是圖1A中的緩衝層的俯視示意圖，且實質上也相同於可撓式顯示面板100在移除元件層140與第二可撓層120之後的俯視示意圖。請參閱圖1B與圖1C，在本實施例中，這些通孔H13a週期性地分布在第一可撓層110與第二可撓層120之間，而緩衝層130a的形狀為網狀。以圖1C為例，這些通孔H13a為網格（lattice），並呈陣列排列，其中各個通孔H13a的開口形狀實質上彼此相同，並且為矩形，從而形成方格網狀（square mesh）的緩衝層130a。FIG. 1C is a schematic top view of the buffer layer in FIG. 1A, which is substantially the same as the schematic top view of the flexible display panel 100 after the element layer 140 and the second flexible layer 120 are removed. Please refer to FIGS. 1B and 1C. In this embodiment, the through holes H13a are periodically distributed between the first flexible layer 110 and the second flexible layer 120, and the shape of the buffer layer 130a is mesh. Taking FIG. 1C as an example, the through holes H13a are lattices and are arranged in an array. The opening shapes of the through holes H13a are substantially the same as each other and are rectangular, thereby forming a square mesh. Buffer layer 130a.
除了圖1C所示的緩衝層130a，在其他實施例中，緩衝層也可具有方格網狀以外的其他形狀，其中緩衝層的多個通孔也能週期性地分布在第一可撓層110與第二可撓層120之間，且這些通孔的開口形狀可以實質上相同，例如圖1D與圖1E所示的緩衝層130b與130c。此外，在圖1B所示的可撓式顯示面板100中，緩衝層130a可替換成緩衝層130b或130c。In addition to the buffer layer 130a shown in FIG. 1C, in other embodiments, the buffer layer may have a shape other than a grid pattern, and a plurality of through holes of the buffer layer may be periodically distributed on the first flexible layer. 110 and the second flexible layer 120, and the opening shapes of the through holes may be substantially the same, for example, the buffer layers 130b and 130c shown in FIG. 1D and FIG. 1E. In addition, in the flexible display panel 100 shown in FIG. 1B, the buffer layer 130 a may be replaced with a buffer layer 130 b or 130 c.
請參閱圖1D，其所示的緩衝層130b的形狀為蜂巢網狀（honeycomb mesh），其中緩衝層130b具有多個呈週期性地排列的通孔H13b，而各個通孔H13b的開口形狀為六角形。請參閱圖1E，其所示的緩衝層130c的形狀為三角格網狀（triangle mesh），其中緩衝層130c具有多個呈週期性地排列的通孔H13c，而各個通孔H13c的開口形狀為三角形。Please refer to FIG. 1D. The shape of the buffer layer 130b is a honeycomb mesh. The buffer layer 130b has a plurality of through holes H13b arranged periodically, and the opening shape of each through hole H13b is six. Angular. Please refer to FIG. 1E. The shape of the buffer layer 130c is a triangular mesh. The buffer layer 130c has a plurality of through holes H13c arranged periodically, and the opening shape of each through hole H13c is triangle.
相同於緩衝層130a的功效，緩衝層130b與130c兩者所具有的通孔H13b與H13c也能幫助氣體散逸，同樣也能抑制氣泡的形成，有助於提升良率。此外，必須說明的是，緩衝層130a的通孔H13a也可利用調整製造緩衝層130a的參數來形成，其中此參數例如是通入氣體的流量。因此，當緩衝層130a剛製作完成時，這些通孔H13a也同時形成，其中這些通孔H13a可以是緩衝層130a中非週期性（aperiodly）分布的裂痕（crack），所以這些通孔H13a也可非週期性地分布在第一可撓層110與第二可撓層120之間，且至少兩通孔H13a形狀明顯不同。Similar to the effect of the buffer layer 130a, the through holes H13b and H13c of both the buffer layers 130b and 130c can also help the gas to dissipate, and also can suppress the formation of bubbles, which can help improve the yield. In addition, it must be noted that the through hole H13a of the buffer layer 130a can also be formed by adjusting a parameter for manufacturing the buffer layer 130a, where this parameter is, for example, a flow rate of a gas to be passed. Therefore, when the buffer layer 130a is just completed, the through holes H13a are also formed at the same time. The through holes H13a may be cracks distributed aperiodically in the buffer layer 130a, so these through holes H13a may also be formed. Aperiodically distributed between the first flexible layer 110 and the second flexible layer 120, and the shapes of at least two through holes H13a are significantly different.
圖2是本發明另一實施例的可撓式顯示面板的剖面示意圖。請參閱圖2，圖2所示的可撓式顯示面板200相似於前述實施例的可撓式顯示面板100。例如，可撓式顯示面板200也包括第一可撓層110、第二可撓層220、緩衝層230以及元件層140。第二可撓層220的材料可相同於第二可撓層120的材料，而緩衝層230的厚度T23可介於1000埃至10000埃之間。緩衝層230也具有多個通孔H23，其中所有通孔H23也是全面性地分布於緩衝層230內，且通孔H23的形狀可相同於上述通孔H13a、H13b或H13c。不過，可撓式顯示面板200與100之間仍存在差異，其在於第一可撓層110與第二可撓層220皆未填入於這些通孔H23內。FIG. 2 is a schematic cross-sectional view of a flexible display panel according to another embodiment of the present invention. Please refer to FIG. 2. The flexible display panel 200 shown in FIG. 2 is similar to the flexible display panel 100 of the foregoing embodiment. For example, the flexible display panel 200 also includes a first flexible layer 110, a second flexible layer 220, a buffer layer 230, and an element layer 140. The material of the second flexible layer 220 may be the same as that of the second flexible layer 120, and the thickness T23 of the buffer layer 230 may be between 1000 angstroms and 10,000 angstroms. The buffer layer 230 also has a plurality of through-holes H23. All the through-holes H23 are also comprehensively distributed in the buffer layer 230, and the shape of the through-holes H23 may be the same as the through-holes H13a, H13b, or H13c. However, there is still a difference between the flexible display panels 200 and 100 because the first flexible layer 110 and the second flexible layer 220 are not filled in the through holes H23.
雖然第一可撓層110與第二可撓層220皆未填入於這些通孔H23內，但第二可撓層220因具有透氣性，所以氣體分子可穿透第二可撓層120而散逸。換句話說，縱使這些通孔H23沒有被填滿，通孔H23同樣也能發揮抑制氣泡形成的功效，從而有助於提升良率。此外，在本實施例中，第一可撓層110的厚度T11實質上可相等於第二可撓層220的厚度T22。如此，相同材料的第一可撓層110與第二可撓層220兩者受熱所產生的形變量基本上會彼此相同，以大幅減少翹曲出現的機率，甚至更能消除翹曲，提升良率。Although the first flexible layer 110 and the second flexible layer 220 are not filled in the through holes H23, the second flexible layer 220 has gas permeability, so that gas molecules can penetrate the second flexible layer 120 and Dissipate. In other words, even though these through holes H23 are not filled, the through holes H23 can also play a role in suppressing the formation of bubbles, thereby helping to improve the yield. In addition, in this embodiment, the thickness T11 of the first flexible layer 110 may be substantially equal to the thickness T22 of the second flexible layer 220. In this way, the first flexible layer 110 and the second flexible layer 220 of the same material are basically the same as each other when heated, so as to greatly reduce the occurrence of warpage, and even eliminate the warpage and improve the yield. rate.
圖3是本發明另一實施例的可撓式顯示面板的剖面示意圖。請參閱圖3，圖3所示的可撓式顯示面板300相似於前述實施例的可撓式顯示面板200。例如，可撓式顯示面板300也包括第一可撓層110、第二可撓層220以及元件層140。不過，可撓式顯示面板300與可撓式顯示面板200之間仍存有差異，其在於可撓式顯示面板300所包括的緩衝結晶層330。3 is a schematic cross-sectional view of a flexible display panel according to another embodiment of the present invention. Please refer to FIG. 3. The flexible display panel 300 shown in FIG. 3 is similar to the flexible display panel 200 of the foregoing embodiment. For example, the flexible display panel 300 also includes a first flexible layer 110, a second flexible layer 220, and an element layer 140. However, there is still a difference between the flexible display panel 300 and the flexible display panel 200, which lies in the buffer crystal layer 330 included in the flexible display panel 300.
具體而言，緩衝結晶層330夾置於第一可撓層110與第二可撓層220之間，而元件層140配置於第二可撓層220，其中第二可撓層220位於元件層140與緩衝結晶層330之間。緩衝結晶層330不同於前述緩衝層130a至130c以及230，其中緩衝結晶層330具有晶體結構（crystal structure），因此緩衝結晶層330也具有至少一晶粒邊界B33。以圖3為例，緩衝結晶層330具有多條晶粒邊界B33，而晶粒邊界B33至少一者連通於第一可撓層110與第二可撓層220之間。此外，緩衝結晶層330的厚度T33可以介於1000埃至10000埃之間。Specifically, the buffer crystal layer 330 is sandwiched between the first flexible layer 110 and the second flexible layer 220, and the element layer 140 is disposed on the second flexible layer 220, wherein the second flexible layer 220 is located on the element layer 140 and the buffer crystal layer 330. The buffer crystal layer 330 is different from the aforementioned buffer layers 130a to 130c and 230. The buffer crystal layer 330 has a crystal structure, and therefore the buffer crystal layer 330 also has at least one grain boundary B33. Taking FIG. 3 as an example, the buffer crystal layer 330 has a plurality of grain boundaries B33, and at least one of the grain boundaries B33 is communicated between the first flexible layer 110 and the second flexible layer 220. In addition, the thickness T33 of the buffer crystal layer 330 may be between 1000 angstroms and 10,000 angstroms.
緩衝結晶層330的材料選自於由氧化物、碳化物、氮化物、硼化物以及矽化物所組成的族群。以氧化物為例，緩衝結晶層330的材料可選自於由銦錫氧化物（ITO）、銦鋅氧化物（IZO）以及氧化銦鎵鋅（IGZO）所組成的族群，其能在高溫環境下形成晶體結構。The material of the buffer crystal layer 330 is selected from the group consisting of oxide, carbide, nitride, boride, and silicide. Taking oxide as an example, the material of the buffer crystal layer 330 may be selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO), which can be used in high temperature environments. A crystal structure is formed.
以銦錫氧化物為例，根據1999年出版的應用物理學雜誌第86冊6451頁（Journal of Applied Physics., 86 6451），H. Kim與C. M. Gilmore提出銦錫氧化物薄膜在高溫下會形成晶體結構，其中此晶體結構可以利用X光繞射圖案而被發現。當銦錫氧化物薄膜處於100℃的環境時，X光繞射圖案在(400)處會出現峰值。當銦錫氧化物薄膜處於300℃的環境時，X光繞射圖案在(222)、(411)以及(622)等處會出現峰值。因此，加熱後的銦錫氧化物薄膜得以具有(400)，或(222)、(411)與(622)的晶體結構。Taking indium tin oxide as an example, according to Journal of Applied Physics, page 6451 (86 6451), published in 1999, H. Kim and CM Gilmore proposed that indium tin oxide films will form at high temperatures. Crystal structure, in which this crystal structure can be found using X-ray diffraction patterns. When the indium tin oxide film is in an environment of 100 ° C, a peak of the X-ray diffraction pattern appears at (400). When the indium tin oxide thin film is in an environment of 300 ° C, the X-ray diffraction pattern will have peaks at (222), (411), and (622). Therefore, the heated indium tin oxide film can have a crystal structure of (400), or (222), (411), and (622).
由於製造可撓式顯示面板100的過程所進行的加熱製程會超過200℃，例如烘烤第二可撓層120，因此緩衝結晶層330內部能形成晶體結構，以使緩衝結晶層330具有晶粒邊界B33。晶粒邊界B33能產生晶界擴散（grain boundary diffusion），因此氣體分子能藉由晶界擴散而沿著晶粒邊界B33移動，從而經由第二可撓層220而散逸。如此，緩衝結晶層330也能避免氣體累積在第一可撓層110與第二可撓層220之間，以抑制氣泡的形成，從而有助於提升良率。Since the heating process in the process of manufacturing the flexible display panel 100 may exceed 200 ° C., such as baking the second flexible layer 120, a crystal structure can be formed inside the buffer crystal layer 330 so that the buffer crystal layer 330 has crystal grains. Border B33. The grain boundary B33 can generate grain boundary diffusion. Therefore, the gas molecules can move along the grain boundary B33 by the grain boundary diffusion, and then dissipate through the second flexible layer 220. In this way, the buffer crystal layer 330 can also prevent gas from being accumulated between the first flexible layer 110 and the second flexible layer 220 to suppress the formation of bubbles, thereby helping to improve the yield.
綜上所述，在本發明至少一實施例的可撓式顯示面板中，第一可撓層與第二可撓層能幫助減少翹曲出現的機率，而緩衝層與緩衝結晶層能分別利用多個通孔與至少一晶粒邊界來幫助氣體散逸，以避免氣體累積在第一可撓層與第二可撓層之間，從而抑制氣泡的形成。由此可知，利用第一可撓層、第二可撓層以及緩衝層，可幫助減少或消除翹曲與氣泡等缺陷，有助於提升良率。In summary, in the flexible display panel of at least one embodiment of the present invention, the first flexible layer and the second flexible layer can help reduce the chance of warping, and the buffer layer and the buffer crystal layer can be used separately. The plurality of through holes and at least one grain boundary help the gas to escape, so as to prevent gas from being accumulated between the first flexible layer and the second flexible layer, thereby suppressing the formation of air bubbles. It can be seen that the use of the first flexible layer, the second flexible layer, and the buffer layer can help reduce or eliminate defects such as warpage and bubbles, and help improve yield.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains may make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the appended patent application.
100、200、300‧‧‧可撓式顯示面板100, 200, 300‧‧‧ flexible display panel
110‧‧‧第一可撓層110‧‧‧First flexible layer
120、220‧‧‧第二可撓層120, 220‧‧‧Second flexible layer
130a、130b、130c、230‧‧‧緩衝層130a, 130b, 130c, 230‧‧‧ buffer layer
140‧‧‧元件層140‧‧‧component layer
141‧‧‧顯示區141‧‧‧display area
330‧‧‧緩衝結晶層330‧‧‧ buffer crystal layer
B33‧‧‧晶粒邊界B33‧‧‧grain boundary
H13a、H13b、H23‧‧‧通孔H13a, H13b, H23‧‧‧through hole
P1‧‧‧投影區域P1‧‧‧ projection area
T11、T12、T13、T22、T23、T33‧‧‧厚度T11, T12, T13, T22, T23, T33‧‧‧thickness
W13‧‧‧寬度W13‧‧‧Width
圖1A是本發明至少一實施例的可撓式顯示面板的俯視示意圖。 圖1B是圖1A中沿線1B-1B剖面所繪製的剖面示意圖。 圖1C是圖1A中的緩衝層的俯視示意圖。 圖1D是本發明另一實施例中的緩衝層的俯視示意圖。 圖1E是本發明另一實施例中的緩衝層的俯視示意圖。 圖2是本發明另一實施例的可撓式顯示面板的剖面示意圖。 圖3是本發明另一實施例的可撓式顯示面板的剖面示意圖。FIG. 1A is a schematic top view of a flexible display panel according to at least one embodiment of the present invention. FIG. 1B is a schematic cross-sectional view taken along the line 1B-1B in FIG. 1A. FIG. 1C is a schematic top view of the buffer layer in FIG. 1A. FIG. 1D is a schematic top view of a buffer layer in another embodiment of the present invention. FIG. 1E is a schematic top view of a buffer layer in another embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a flexible display panel according to another embodiment of the present invention. 3 is a schematic cross-sectional view of a flexible display panel according to another embodiment of the present invention.
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| TW201743304A (en) * | 2016-06-03 | 2017-12-16 | 三星顯示器有限公司 | Flexible display device |
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