CN108258079B - Ultraviolet photoelectric detector and preparation method thereof - Google Patents
Ultraviolet photoelectric detector and preparation method thereof Download PDFInfo
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
Abstract
The invention belongs to the technical field of photoelectric detection, and particularly relates to an ultraviolet photoelectric detector which comprises a transparent substrate and a transparent conductive anode, and is characterized in that: the transparent conductive anode is arranged on the transparent substrate, and the hole injection enhancement layer is arranged on the transparent conductive anode, the hole injection enhancement layer is of a three-layer structure and comprises a first hole injection enhancement layer, a second hole injection enhancement layer and a third hole injection enhancement layer, the first hole injection enhancement layer is Au nano-particles, and the nominal thickness of the Au nanoparticles is 1-5nm, the particle size of the Au nanoparticles is 20-30nm, the second hole injection enhancement layer is stacked on the first hole injection enhancement layer, the second hole injection enhancement layer adopts an organic wide bandgap electron transport material, and a third hole injection enhancement layer is arranged on the second hole injection enhancement layer and adopts an organic hole transport material, and the third hole injection enhancement layer has an energy level of the highest occupied orbit of 5.3-5.5 eV.
Description
Technical Field
The invention belongs to the technical field of photoelectric detection, and particularly relates to an ultraviolet photoelectric detector and a preparation method thereof.
Background
Ultraviolet photoelectric detectors are widely applied to medical treatment, military affairs, communication and the like, particularly, atmospheric ozone layer damage is increased, ultraviolet light radiated to the earth is more and more severe, people pay more and more attention to the problem that ultraviolet rays burn skins, and the intensity of the ultraviolet rays needs to be conveniently detected so as to take protective measures. The common ultraviolet sensitive photomultiplier has large volume, high voltage and higher cost. The development of new ultraviolet photodetectors is highly desirable. In recent years, organic ultraviolet photodetectors have attracted much attention due to their outstanding advantages, such as simple preparation method, low cost, light weight, and capability of being prepared into flexible devices. The key problem to be solved in the field of organic photoelectric detection technology at present is how to improve the detection performance of the organic photoelectric detector and prolong the service life of the device to achieve the practical requirement. In particular, the detection rate of organic ultraviolet photodetectors is still relatively low compared to inorganic photodetectors.
Therefore, it is a problem to be solved to provide an ultraviolet photodetector capable of improving the detectivity.
Disclosure of Invention
The present invention provides a high-responsivity ultraviolet photodetector to solve the problem of the low ultraviolet photodetector proposed in the above background art.
In order to achieve the purpose, the invention provides the following technical scheme:
as one aspect of the present invention, there is provided an ultraviolet photodetector, including a transparent substrate, a transparent conductive anode, characterized in that: the transparent conductive anode is positioned on the transparent substrate, the hole injection enhancement layer is arranged on the transparent conductive anode, the hole injection enhancement layer is of a three-layer structure and comprises a first hole injection enhancement layer, a second hole injection enhancement layer and a third hole injection enhancement layer, the first hole injection enhancement layer, the second hole injection enhancement layer and the third hole injection enhancement layer are sequentially stacked on the transparent conductive anode, the first hole injection enhancement layer is Au nanoparticles, the nominal thickness of the Au nanoparticles is 1-5nm, the particle size of the Au nanoparticles is 20-30nm, the second hole injection enhancement layer is stacked on the first hole injection enhancement layer, the second hole injection enhancement layer is made of an organic wide forbidden band electron transport material, the thickness of the second hole injection enhancement layer is 5-15nm, and the third hole injection enhancement layer is arranged on the second hole injection enhancement layer, the third hole enhancement layer is made of an organic hole transport material, the thickness of the third hole injection enhancement layer is 15nm, and the highest occupied energy level of the third hole injection enhancement layer is 5.3-5.5 eV.
Preferably, an ultraviolet light response layer is arranged on the hole injection enhancement layer and is of a PIN structure, wherein the P-type layer is m-MTDATA and is 8nm thick; the I-type layer is a mixed film of m-MTDATA and BPhen, and the mixing ratio of the m-MTDATA to the BPhen is 1: 3, mixing the films to form a mixed film with the thickness of 55 nm; the N-type layer is BPhen, and the thickness of the N-type layer is 15 nm.
Preferably, an electron injection layer is arranged on the ultraviolet light response layer, the electron injection layer is a mixed film of LiF and CsCO3, and the mixing ratio of LiF to CsCO3 is 1: 1, and the thickness of the electron injection layer is 2 nm.
Preferably, a reflective conductive cathode layer is arranged on the electron injection layer, the reflective conductive cathode layer is made of low work function metal and comprises Al, Ag or Mg, and the thickness of the reflective conductive cathode layer is 50-1000 nm.
Preferably, the transparent substrate is a glass substrate or a flexible polymer substrate, and the thickness of the transparent substrate is 5 to 12 mm.
Preferably, the transparent conductive anode is a transparent metal oxide with a high work function, including ITO, FTO and IGZO, and the thickness of the transparent conductive anode is 100-200 nm.
As another aspect of the present invention, there is provided a method for manufacturing an ultraviolet photodetector, comprising: the preparation of the ultraviolet photoelectric detector comprises the following steps:
s1, cleaning the transparent substrate with the transparent conductive anode to clean the surface, putting the transparent substrate into 20% sodium hydroxide aqueous solution, acetone, ethanol and isopropanol in sequence to carry out ultrasonic cleaning for 10min each time, and then carrying out ultraviolet ozone treatment for 10 min;
s2, growing a first hole injection enhancement layer, growing a layer of Au nanoparticles with the nominal thickness of 1-5nm on the transparent conductive anode by adopting a self-assembly method, and controlling the particle size of the Au nanoparticles to be 20-30 nm;
s3, sequentially carrying out thermal deposition growth on a second hole injection enhancement layer, a third hole injection enhancement layer, an ultraviolet light response layer, an electron injection layer and a reflective conductive cathode layer in the ultrahigh vacuum thermal evaporation equipment, and controlling the vacuum thermal evaporation equipment to be 10 in the deposition process-5Pa, the thermal deposition rate is controlled to be 0.1-0.3nm/s for organic materials and 0.5-2nm/s for inorganic and metallic materials.
Compared with the prior art, the invention has the beneficial effects that: this ultraviolet photoelectric detector passes through the ingenious design of three layer construction hole injection enhancement layer, and the ultraviolet response layer adopts PIN type structure, and the electron injection layer adopts two doped LiF and CsCO3, can improve ultraviolet photoelectric detector's responsivity by a wide margin.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of a hole injection enhancement layer structure according to the present invention;
in the figure: 1-transparent substrate, 2-transparent conductive anode, 3-hole injection enhancement layer, 4-ultraviolet light response layer, 5-electron injection layer, 6-reflective conductive cathode layer, 301-first hole injection enhancement layer, 302-second hole injection enhancement layer, 303-third hole enhancement layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Referring to fig. 1-2, the present invention provides a technical solution: the utility model provides an ultraviolet photoelectric detector, includes transparent basement 1, transparent conductive anode 2 which characterized in that: the transparent conductive anode 2 is positioned on the transparent substrate 1, the hole injection enhancement layer 3 is arranged on the transparent conductive anode 2, the hole injection enhancement layer 3 is of a three-layer structure and comprises a first hole injection enhancement layer 301, a second hole injection enhancement layer 302 and a third hole injection enhancement layer 303, the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and the third hole injection enhancement layer 303 are sequentially stacked on the transparent conductive anode 2, the first hole injection enhancement layer 301 is Au nanoparticles, the nominal thickness of the Au nanoparticles is 1-5nm, the particle size of the Au nanoparticles is 20-30nm, the second hole injection enhancement layer 302 is stacked on the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 is made of an organic wide bandgap electron transport material, and the thickness of the second hole injection enhancement layer 302 is 5-15nm, and above the second hole injection enhancement layer 302A third hole injection enhancement layer 303 is arranged, the third hole injection enhancement layer 303 adopts an organic hole transport material, the thickness of the third hole injection enhancement layer 303 is 15nm, and the energy level of the highest occupied track of the third hole injection enhancement layer 303 is 5.3-5.5 eV; an ultraviolet light response layer 4 is arranged on the hole injection enhancement layer 3, and the ultraviolet light response layer 4 is of a PIN type structure, wherein a P type layer is m-MTDATA and is 8nm thick; the I-type layer is a mixed film of m-MTDATA and BPhen, and the mixing ratio of the m-MTDATA to the BPhen is 1: 3, mixing the films to form a mixed film with the thickness of 55 nm; the N-type layer is BPhen, and the thickness of the N-type layer is 15 nm; an electron injection layer 5 is arranged on the ultraviolet light response layer 4, the electron injection layer is a mixed film of LiF and CsCO3, and the mixing ratio of LiF to CsCO3 is 1: 1, the thickness of the electron injection layer 5 is 2 nm; a reflective conductive cathode layer 6 is arranged on the electron injection layer 5, the reflective conductive cathode layer 6 is a low work function metal comprising Al, Ag or Mg, and the thickness of the reflective conductive cathode layer 6 is 50-1000 nm; the transparent substrate is a glass substrate or a flexible polymer substrate, and the thickness of the transparent substrate is 5-12 mm; the transparent conductive anode 2 is a transparent metal oxide with high work function, including ITO, FTO and IGZO, and the thickness of the transparent conductive anode 2 is 100-200 nm. A preparation method of an ultraviolet photoelectric detector is characterized by comprising the following steps: the preparation of the ultraviolet photoelectric detector comprises the following steps: s1, cleaning the transparent substrate with the transparent conductive anode to clean the surface, putting the transparent substrate into 20% sodium hydroxide aqueous solution, acetone, ethanol and isopropanol in sequence to carry out ultrasonic cleaning for 10min each time, and then carrying out ultraviolet ozone treatment for 10 min; s2, growing a first hole injection enhancement layer, growing a layer of Au nanoparticles with the nominal thickness of 1-5nm on the transparent conductive anode by adopting a self-assembly method, and controlling the particle size of the Au nanoparticles to be 20-30 nm; s3, sequentially carrying out thermal deposition growth on a second hole injection enhancement layer, a third hole injection enhancement layer, an ultraviolet light response layer, an electron injection layer and a reflective conductive cathode layer in the ultrahigh vacuum thermal evaporation equipment, and controlling the vacuum thermal evaporation equipment to be 10 in the deposition process-5Pa, the thermal deposition rate is controlled to be 0.1-0.3nm/s for organic materials and 0.5-2nm/s for inorganic and metallic materials.
Example one
The utility model provides an ultraviolet photoelectric detector, includes transparent basement 1, transparent conductive anode 2 which characterized in that: the transparent conductive anode 2 is positioned on the transparent substrate 1, the hole injection enhancement layer 3 is arranged on the transparent conductive anode 2, the hole injection enhancement layer 3 is a three-layer structure and comprises a first hole injection enhancement layer 301, a second hole injection enhancement layer 302 and a third hole injection enhancement layer 303, the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and the third hole injection enhancement layer 303 are sequentially stacked on the transparent conductive anode 2, the first hole injection enhancement layer 301 is Au nanoparticles, the nominal thickness of the Au nanoparticles is 1nm, the particle size of the Au nanoparticles is 20nm, the second hole injection enhancement layer 302 is stacked on the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 adopts an organic wide bandgap electron transport material, the thickness of the second hole injection enhancement layer 302 is 5nm, and the third hole injection enhancement layer 303 is arranged on the second hole injection enhancement layer 302, TAPC is adopted as the third hole enhancement layer 303, and the thickness of the third hole injection enhancement layer 303 is 15 nm; an ultraviolet light response layer 4 is arranged on the hole injection enhancement layer 3, and the ultraviolet light response layer 4 is of a PIN type structure, wherein a P type layer is m-MTDATA and is 8nm thick; the I-type layer is a mixed film of m-MTDATA and BPhen, and the mixing ratio of the m-MTDATA to the BPhen is 1: 3, mixing the films to form a mixed film with the thickness of 55 nm; the N-type layer is BPhen, and the thickness of the N-type layer is 15 nm; an electron injection layer 5 is arranged on the ultraviolet light response layer 4, the electron injection layer is a mixed film of LiF and CsCO3, and the mixing ratio of LiF to CsCO3 is 1: 1, the thickness of the electron injection layer 5 is 2 nm; a reflective conductive cathode layer 6 is arranged on the electron injection layer 5, the reflective conductive cathode layer 6 is Al, and the thickness of the reflective conductive cathode layer 6 is 50 nm; the transparent substrate is a glass substrate, and the thickness of the transparent substrate is 5 mm; the transparent conductive anode 2 is ITO, and the thickness of the transparent conductive anode 2 is 100 nm. A preparation method of an ultraviolet photoelectric detector is characterized by comprising the following steps: the preparation of the ultraviolet photoelectric detector comprises the following steps: s1, cleaning the transparent substrate with the transparent conductive anode, putting the transparent substrate into 20% sodium hydroxide aqueous solution, acetone and ethanol in sequencePerforming ultrasonic cleaning in isopropanol for 10min each time, and performing ultraviolet ozone treatment for 10 min; s2, growing a first hole injection enhancement layer, growing a layer of Au nanoparticles with the nominal thickness of 1nm on the transparent conductive anode by adopting a self-assembly method, and controlling the particle size of the Au nanoparticles to be 20 nm; s3, sequentially carrying out thermal deposition growth on a second hole injection enhancement layer, a third hole injection enhancement layer, an ultraviolet light response layer, an electron injection layer and a reflective conductive cathode layer in the ultrahigh vacuum thermal evaporation equipment, and controlling the vacuum thermal evaporation equipment to be 10 in the deposition process-5Pa, the thermal deposition rate is controlled to be 0.1nm/s for organic materials and 0.5nm/s for inorganic and metal materials. The detection rate of the detector in the embodiment to 365nm ultraviolet light is 2.3 x 1012And (4) Jones.
Example two
The utility model provides an ultraviolet photoelectric detector, includes transparent basement 1, transparent conductive anode 2 which characterized in that: the transparent conductive anode 2 is positioned on the transparent substrate 1, the hole injection enhancement layer 3 is arranged on the transparent conductive anode 2, the hole injection enhancement layer 3 is a three-layer structure and comprises a first hole injection enhancement layer 301, a second hole injection enhancement layer 302 and a third hole injection enhancement layer 303, the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and the third hole injection enhancement layer 303 are sequentially stacked on the transparent conductive anode 2, the first hole injection enhancement layer 301 is Au nanoparticles, the nominal thickness of the Au nanoparticles is 2.5nm, the particle size of the Au nanoparticles is 25nm, the second hole injection enhancement layer 302 is stacked on the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 adopts an organic wide bandgap electron transport material, the thickness of the second hole injection enhancement layer 302 is 10nm, and the third hole injection enhancement layer 303 is arranged on the second hole injection enhancement layer 302, the third hole enhancement layer 303 is made of NPB, and the thickness of the third hole injection enhancement layer 303 is 15 nm; an ultraviolet light response layer 4 is arranged on the hole injection enhancement layer 3, and the ultraviolet light response layer 4 is of a PIN type structure, wherein a P type layer is m-MTDATA and is 8nm thick; the I-type layer is a mixed film of m-MTDATA and BPhen, and the mixing ratio of the m-MTDATA to the BPhen is 1: 3, mixing the films to form a mixed film with the thickness of 55 nm; the N-type layer is BPhen, and the thickness of the N-type layerIs 15 nm; an electron injection layer 5 is arranged on the ultraviolet light response layer 4, the electron injection layer is a mixed film of LiF and CsCO3, and the mixing ratio of LiF to CsCO3 is 1: 1, the thickness of the electron injection layer 5 is 2 nm; a reflective conductive cathode layer 6 is arranged on the electron injection layer 5, the reflective conductive cathode layer 6 is a low work function metal comprising Al, Ag or Mg, and the thickness of the reflective conductive cathode layer 6 is 500 nm; a transparent substrate PET flexible polymeric substrate, and the transparent substrate has a thickness of 8 mm; the transparent conductive anode 2 is FTO, and the thickness of the transparent conductive anode 2 is 150 nm. A preparation method of an ultraviolet photoelectric detector is characterized by comprising the following steps: the preparation of the ultraviolet photoelectric detector comprises the following steps: s1, cleaning the transparent substrate with the transparent conductive anode to clean the surface, putting the transparent substrate into 20% sodium hydroxide aqueous solution, acetone, ethanol and isopropanol in sequence to carry out ultrasonic cleaning for 10min each time, and then carrying out ultraviolet ozone treatment for 10 min; s2, growing a first hole injection enhancement layer, growing a layer of Au nanoparticles with the nominal thickness of 2.5nm on the transparent conductive anode by adopting a self-assembly method, and controlling the particle size of the Au nanoparticles to be 25 nm; s3, growing a second hole injection enhancement layer, a third hole injection enhancement layer, an ultraviolet light response layer, an electron injection layer and a reflective conductive cathode layer in an ultrahigh vacuum thermal evaporation device in a thermal deposition mode in sequence, wherein the vacuum thermal evaporation device is controlled to be 10-5Pa in the deposition process, the thermal deposition rate is controlled to be 0.2nm/S for organic materials and 1nm/S for inorganic and metal materials. The detection rate of the detector in the embodiment to 365nm ultraviolet light is 1.2 x 1012And (4) Jones.
EXAMPLE III
A ultraviolet photoelectric detector comprises a transparent substrate 1 and a transparent conductive anode 2, wherein the transparent conductive anode 2 is positioned on the transparent substrate 1, a hole injection enhancement layer 3 is arranged on the transparent conductive anode 2, the hole injection enhancement layer 3 is of a three-layer structure and comprises a first hole injection enhancement layer 301, a second hole injection enhancement layer 302 and a third hole injection enhancement layer 303, the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and the third hole injection enhancement layer 303 are sequentially stacked on the transparent conductive anode 2, and the first hole injection enhancement layer 301 is Au nano-structureThe light emitting diode comprises rice particles, wherein the nominal thickness of Au nanoparticles is 5nm, the particle size of the Au nanoparticles is 30nm, a second hole injection enhancement layer 302 is stacked on a first hole injection enhancement layer 301, the second hole injection enhancement layer 302 is made of an organic wide bandgap electron transport material, the thickness of the second hole injection enhancement layer 302 is 15nm, a third hole injection enhancement layer 303 is arranged on the second hole injection enhancement layer 302, the third hole enhancement layer 303 is made of rubrene, and the thickness of the third hole injection enhancement layer 303 is 15 nm; an ultraviolet light response layer 4 is arranged on the hole injection enhancement layer 3, and the ultraviolet light response layer 4 is of a PIN type structure, wherein a P type layer is m-MTDATA and is 8nm thick; the I-type layer is a mixed film of m-MTDATA and BPhen, and the mixing ratio of the m-MTDATA to the BPhen is 1: 3, mixing the films to form a mixed film with the thickness of 55 nm; the N-type layer is BPhen, and the thickness of the N-type layer is 15 nm; an electron injection layer 5 is arranged on the ultraviolet light response layer 4, the electron injection layer is a mixed film of LiF and CsCO3, and the mixing ratio of LiF to CsCO3 is 1: 1, the thickness of the electron injection layer 5 is 2 nm; a reflective conductive cathode layer 6 is arranged on the electron injection layer 5, the reflective conductive cathode layer 6 is Ag, and the thickness of the reflective conductive cathode layer 6 is 1000 nm; the transparent substrate is a glass substrate, and the thickness of the transparent substrate is 12 mm; the transparent conductive anode 2 is IGZO, and the thickness of the transparent conductive anode 2 is 200 nm. A preparation method of an ultraviolet photoelectric detector is characterized by comprising the following steps: the preparation of the ultraviolet photoelectric detector comprises the following steps: s1, cleaning the transparent substrate with the transparent conductive anode to clean the surface, putting the transparent substrate into 20% sodium hydroxide aqueous solution, acetone, ethanol and isopropanol in sequence to carry out ultrasonic cleaning for 10min each time, and then carrying out ultraviolet ozone treatment for 10 min; s2, growing a first hole injection enhancement layer, growing a layer of Au nanoparticles with the nominal thickness of 1-5nm on the transparent conductive anode by adopting a self-assembly method, and controlling the particle size of the Au nanoparticles to be 30 nm; s3, sequentially carrying out thermal deposition growth on a second hole injection enhancement layer, a third hole injection enhancement layer, an ultraviolet light response layer, an electron injection layer and a reflective conductive cathode layer in the ultrahigh vacuum thermal evaporation equipment, and controlling the vacuum thermal evaporation equipment to be 10 in the deposition process-5Pa, thermal deposition rate controlled to organic material0.3nm/s, inorganic and metallic materials 2 nm/s. The detection rate of the detector in the embodiment to 365nm ultraviolet light is 4.1 x 1012And (4) Jones.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. An ultraviolet photodetector comprises a transparent substrate (1) and a transparent conductive anode (2), and is characterized in that: the transparent conductive anode (2) is positioned on the transparent substrate (1), the hole injection enhancement layer (3) is arranged on the transparent conductive anode (2), the hole injection enhancement layer (3) is of a three-layer structure and comprises a first hole injection enhancement layer (301), a second hole injection enhancement layer (302) and a third hole injection enhancement layer (303), the first hole injection enhancement layer (301), the second hole injection enhancement layer (302) and the third hole injection enhancement layer (303) are sequentially stacked on the transparent conductive anode (2), the first hole injection enhancement layer (301) is Au nanoparticles, the nominal thickness of the Au nanoparticles is 1-5nm, the particle size of the Au nanoparticles is 20-30nm, the second hole injection enhancement layer (302) is stacked on the first hole injection enhancement layer (301), and the second hole injection enhancement layer (302) is made of an organic wide band gap electron transport material, the thickness of the second hole injection enhancement layer (302) is 5-15nm, a third hole injection enhancement layer (303) is arranged on the second hole injection enhancement layer (302), the third hole enhancement layer (303) is made of an organic hole transport material, the thickness of the third hole injection enhancement layer (303) is 15nm, the highest occupied energy level of the third hole injection enhancement layer (303) is 5.3-5.5eV, an ultraviolet light response layer (4) is arranged on the hole injection enhancement layer (3), the ultraviolet light response layer (4) is of a PIN type structure, the P type layer is m-MTDATA, and the thickness is 8 nm; the I-type layer is a mixed film of m-MTDATA and BPhen, and the mixing ratio of the m-MTDATA to the BPhen is 1: 3, mixing the films to form a mixed film with the thickness of 55 nm; the N-type layer is BPhen, the thickness of the N-type layer is 15nm, an electron injection layer (5) is arranged on the ultraviolet light response layer (4), the electron injection layer is a mixed film of LiF and CsCO3, and the mixing ratio of LiF to CsCO3 is 1: 1, and the thickness of the electron injection layer (5) is 2 nm.
2. The uv photodetector of claim 1, wherein: the electron injection layer (5) is provided with a reflective conductive cathode layer (6), the reflective conductive cathode layer (6) is made of low work function metal and comprises Al, Ag or Mg, and the thickness of the reflective conductive cathode layer (6) is 50-1000 nm.
3. The uv photodetector of claim 1, wherein: the transparent substrate is a glass substrate or a flexible polymer substrate, and the thickness of the transparent substrate is 5-12 mm.
4. The uv photodetector of claim 1, wherein: the transparent conductive anode (2) is a transparent metal oxide with high work function, and comprises ITO, FTO and IGZO, and the thickness of the transparent conductive anode (2) is 100-200 nm.
5. The method of claim 1, wherein the method comprises the following steps: the preparation of the ultraviolet photoelectric detector comprises the following steps:
s1, cleaning the transparent substrate with the transparent conductive anode to clean the surface, putting the transparent substrate into 20% sodium hydroxide aqueous solution, acetone, ethanol and isopropanol in sequence to carry out ultrasonic cleaning for 10min each time, and then carrying out ultraviolet ozone treatment for 10 min;
s2, growing a first hole injection enhancement layer, growing a layer of Au nanoparticles with the nominal thickness of 1-5nm on the transparent conductive anode by adopting a self-assembly method, and controlling the particle size of the Au nanoparticles to be 20-30 nm;
s3 sequentially carrying out thermal deposition growth on a second hole injection enhancement layer, a third hole injection enhancement layer and purple in an ultrahigh vacuum thermal evaporation deviceAn external light response layer, an electron injection layer and a reflective conductive cathode layer, and a vacuum thermal evaporation device is controlled at 10 during deposition-5Pa, the thermal deposition rate is controlled to be 0.1-0.3nm/s for organic materials and 0.5-2nm/s for inorganic and metallic materials.
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