CN108258079A - A kind of UV photodetector and preparation method thereof - Google Patents
A kind of UV photodetector and preparation method thereof Download PDFInfo
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- CN108258079A CN108258079A CN201810048926.6A CN201810048926A CN108258079A CN 108258079 A CN108258079 A CN 108258079A CN 201810048926 A CN201810048926 A CN 201810048926A CN 108258079 A CN108258079 A CN 108258079A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
Abstract
The invention belongs to technical field of photoelectric detection, specially a kind of UV photodetector, including transparent substrates, transparent conductive anode, it is characterised in that：The transparent conductive anode is located on transparent substrates,And injection enhancement layer in hole is set on transparent conductive anode,The hole injection enhancement layer is three-decker,Enhancement layer is injected including the first hole,Enhancement layer and third hole injection enhancement layer are injected in second hole,The first hole injection enhancement layer is Au nano particles,And the nominal thickness of Au nano particles is 1 5nm,The grain size of Au nano particles is 20 30nm,The second hole injection enhancement layer is laminated on the first hole injection enhancement layer,And second hole injection enhancement layer use organic broad stopband electron transport material,And second hole injection enhancement layer on be provided with third hole injection enhancement layer,Third hole enhancement layer uses organic hole transport material,And the energy level of the HOMO highest occupied molecular orbital of third hole injection enhancement layer is 5.3 5.5eV.
Description
Technical field
The invention belongs to technical field of photoelectric detection, specially a kind of UV photodetector and preparation method thereof.
Background technology
UV photodetector is widely used in medical treatment, military and communication etc., particularly Atmospheric Ozone Layer Depletion
It increases, is radiated the problem of tellurian ultraviolet light is more and more severe, and people increasingly pay close attention to ultraviolet ray burn skin, the side of needs
Just the intensity of detection ultraviolet light is to take safeguard procedures.Common ultraviolet sensitivity photomultiplier transit pipe volume is big, voltage is high, into
This is higher.The novel UV photodetector of the highly desirable exploitation of people.In recent years, organic ultraviolet photodetector is because of its preparation
Method is simple, it is of low cost, light-weight, outstanding advantages of flexible device near point can be prepared into widely paid close attention to.How
The requirement that the detection performance for improving organic photodetector, the service life for extending device reach functionization is current organic photoelectric
Detection technology field critical issue urgently to be resolved hurrily.Particularly compared with inorganic photovoltaic detector, organic ultraviolet photodetector
Detectivity also than relatively low.
So providing a kind of UV photodetector that can improve detectivity will solve the problems, such as us.
Invention content
The purpose of the present invention is to provide a kind of UV photodetector of high-responsivity, to solve in above-mentioned background technology
It is proposed the problem of UV photodetector is low.
To achieve the above object, the present invention provides following technical solution：
A kind of UV photodetector is provided as one aspect of the present invention, the UV photodetector, including
Transparent substrates, transparent conductive anode, it is characterised in that：The transparent conductive anode is located on transparent substrates, and electrically conducting transparent
Injection enhancement layer in hole is set on anode, the hole injection enhancement layer is three-decker, injects and increases including the first hole
Strong layer, the second hole injection enhancement layer and third hole injection enhancement layer, and the first hole injection enhancement layer, the injection of the second hole
Enhancement layer and third hole injection enhancement layer are sequentially laminated on transparent conductive anode, and the first hole injection enhancement layer is
Au nano particles, and the nominal thickness of Au nano particles is 1-5nm, the grain size of Au nano particles is 20-30nm, and described second is empty
Cave injection enhancement layer is laminated on the first hole injection enhancement layer, and the second hole injection enhancement layer is using organic broad stopband electricity
Sub- transmission material, the thickness of the second hole injection enhancement layer is 5-15nm, and set on the second hole injection enhancement layer
There is third hole to inject enhancement layer, third hole enhancement layer uses organic hole transport material, the third hole injection
The thickness of enhancement layer is 15nm, and the energy level of the HOMO highest occupied molecular orbital of third hole injection enhancement layer is 5.3-5.5eV.
As preference, ultraviolet light response layer is provided on the hole injection enhancement layer, and ultraviolet light response layer is PIN
Type structure, wherein P-type layer are m-MTDATA, thickness 8nm；I types layer be m-MTDATA and BPhen hybrid films, m-MTDATA with
The mixed proportion of BPhen is is in molar ratio 1：3 carry out, mixing film thickness 55nm；N-type layer is BPhen, and the thickness of N-type layer is
15nm。
As preference, electron injecting layer is provided on the ultraviolet light response layer, and the electron injecting layer is LiF
With the hybrid films of CsCO3, the mixed proportion of LiF and CsCO3 is are in mass ratio 1：1 carries out, and the thickness of the electron injecting layer
It spends for 2nm.
As preference, reflection conducting cathode layer is provided on the electron injecting layer, and the reflection conducting cathode layer
For low workfunction metal, including Al, Ag or Mg, the thickness 50-1000nm of the reflection conducting cathode layer.
As preference, the transparent substrates are substrate of glass or flexible polymer substrate, and the transparent substrates
Thickness is 5-12mm.
As preference, the transparent conductive anode is the transparent metal oxide of high work function, including ITO, FTO and
IGZO, and the thickness of the transparent conductive anode is 100-200nm.
As another aspect of the present invention, a kind of preparation method of UV photodetector is provided, it is characterised in that：
The preparation of the UV photodetector includes the following steps：
S1, the transparent substrates with transparent conductive anode are cleaned, makes its surface cleaning, transparent substrates are put successively
Enter and be cleaned by ultrasonic in 20% sodium hydrate aqueous solution, acetone, ethyl alcohol and isopropanol, each ultrasound 10min is then ultraviolet smelly
Oxygen handles 10min；
S2, one hole of growth regulation injection enhancement layer, one layer of name is grown using the method for self assembly on transparent conductive anode
Adopted thickness be 1-5nm Au nano particles, and control Au nano particles grain size be 20-30nm；
S3, two hole of heat deposition growth regulation injection enhancement layer, third hole are noted successively in ultrahigh vacuum hot evaporation equipment
Enter enhancement layer, ultraviolet light response layer, electron injecting layer and reflection conducting cathode layer, vacuum thermal evaporation equipment is controlled in deposition process
10-5Pa, heat deposition rate control are organic material 0.1-0.3nm/s, inorganic and metal material 0.5-2nm/s.
Compared with prior art, the beneficial effects of the invention are as follows：The UV photodetector is noted by three-decker hole
Enter the ingehious design of enhancement layer, ultraviolet light response layer uses PIN type structure, electron injecting layer using codope LiF and
CsCO3 can greatly improve the responsiveness of UV photodetector.
Description of the drawings
Fig. 1 is schematic structural view of the invention；
Fig. 2 injects enhancement layer structure diagram for hole of the present invention；
In figure：1- transparent substrates, 2- transparent conductive anodes, 3- holes injection enhancement layer, 4- ultraviolet light response layers, 5- electronics
Implanted layer, 6- reflection conducting cathode layers, the first holes of 301- injection enhancement layer, the second holes of 302- injection enhancement layer, 303- the
Three hole enhancement layers.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that term " on ", " under ", "front", "rear", "left", "right", " top ",
The orientation or position relationship of the instructions such as " bottom ", " interior ", " outer " are based on orientation shown in the drawings or position relationship, merely to just
In the description present invention and simplify description rather than instruction or imply signified device or element must have specific orientation, with
Specific azimuth configuration and operation, therefore be not considered as limiting the invention.
- 2 are please referred to Fig.1, the present invention provides a kind of technical solution：A kind of UV photodetector, including transparent substrates 1,
Transparent conductive anode 2, it is characterised in that：Transparent conductive anode 2 is located on transparent substrates 1, and is set on transparent conductive anode 2
Hole injection enhancement layer 3 is placed in, hole injection enhancement layer 3 is three-decker, injects enhancement layer 301, second including the first hole
Enhancement layer 302 and third hole injection enhancement layer 303, and the first hole injection enhancement layer 301, the injection of the second hole are injected in hole
Enhancement layer 302 and third hole injection enhancement layer 303 are sequentially laminated on transparent conductive anode 2, the injection enhancing of the first hole
Layer 301 is Au nano particles, and the nominal thickness of Au nano particles is 1-5nm, and the grain size of Au nano particles is 20-30nm, the
Two holes injection enhancement layer 302 is laminated on the first hole injection enhancement layer 301, and the second hole injection enhancement layer 302 is adopted
With organic broad stopband electron transport material, the thickness of the second hole injection enhancement layer 302 is 5-15nm, and the second hole is noted
Enter to be provided with injection enhancement layer 303 in third hole on enhancement layer 302, third hole enhancement layer 303 is transmitted using organic hole
Material, the thickness of third hole injection enhancement layer 303 is 15nm, and the HOMO highest occupied molecular orbital of enhancement layer 303 is injected in third hole
Energy level be 5.3-5.5eV；Ultraviolet light response layer 4 is provided on hole injection enhancement layer 3, and ultraviolet light response layer 4 is PIN type
Structure, wherein P-type layer are m-MTDATA, thickness 8nm；I types layer be m-MTDATA and BPhen hybrid films, m-MTDATA with
The mixed proportion of BPhen is is in molar ratio 1：3 carry out, mixing film thickness 55nm；N-type layer is BPhen, and the thickness of N-type layer is
15nm；Be provided with electron injecting layer 5 on ultraviolet light response layer 4, and the hybrid films that electron injecting layer is LiF and CsCO3, LiF with
The mixed proportion of CsCO3 is is in mass ratio 1：1 carries out, and the thickness of electron injecting layer 5 is 2nm；It is provided on electron injecting layer 5
Conducting cathode layer 6 is reflected, reflection conducting cathode layer 6 is low workfunction metal, including Al, Ag or Mg, reflects conducting cathode layer 6
Thickness 50-1000nm；Transparent substrates are substrate of glass or flexible polymer substrate, and the thickness of the transparent substrates is 5-
12mm；Transparent conductive anode 2 is the transparent metal oxide of high work function, including ITO, FTO and IGZO, and the electrically conducting transparent
The thickness of anode 2 is 100-200nm.A kind of preparation method of UV photodetector, it is characterised in that：The ultraviolet photoelectric
The preparation for surveying device includes the following steps：S1, the transparent substrates with transparent conductive anode are cleaned, make its surface cleaning,
Transparent substrates are sequentially placed into 20% sodium hydrate aqueous solution, acetone, ethyl alcohol and isopropanol and are cleaned by ultrasonic, every time ultrasound
10min, then UV ozone processing 10min；S2, one hole of growth regulation injection enhancement layer, using the method for self assembly transparent
One layer of nominal thickness is grown on conductive anode and is the Au nano particles of 1-5nm, and it is 20- to control the grain sizes of Au nano particles
30nm；S3, two hole of heat deposition growth regulation injection enhancement layer, the injection of third hole increase successively in ultrahigh vacuum hot evaporation equipment
Strong layer, ultraviolet light response layer, electron injecting layer and reflection conducting cathode layer, control vacuum thermal evaporation equipment exists in deposition process
10-5Pa, heat deposition rate control are organic material 0.1-0.3nm/s, inorganic and metal material 0.5-2nm/s.
Embodiment one
A kind of UV photodetector, including transparent substrates 1, transparent conductive anode 2, it is characterised in that：Electrically conducting transparent sun
Pole 2 is located on transparent substrates 1, and injection enhancement layer 3 in hole is set on transparent conductive anode 2, hole injection enhancement layer 3
For three-decker, enhance including the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and the injection of third hole
Layer 303, and the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and third hole injection enhancement layer 303 according to
Secondary to be layered on transparent conductive anode 2, enhancement layer 301 is injected for Au nano particles in the first hole, and the name of Au nano particles
Adopted thickness is 1nm, and the grain size of Au nano particles is 20nm, and the second hole injection enhancement layer 302 is laminated in the injection of the first hole and increases
On strong layer 301, and the second hole injection enhancement layer 302 uses organic broad stopband electron transport material, the second hole note
The thickness for entering enhancement layer 302 is 5nm, and injection enhancement layer in third hole is provided on the second hole injection enhancement layer 302
303, third hole enhancement layer 303 uses TAPC, and the thickness of third hole injection enhancement layer 303 is 15nm；Hole injection enhancing
Ultraviolet light response layer 4 is provided on layer 3, and ultraviolet light response layer 4 is PIN type structure, wherein P-type layer is m-MTDATA, thickness
8nm；The mixed proportion of hybrid films of the I types layer for m-MTDATA and BPhen, m-MTDATA and BPhen is are in molar ratio 1：3 into
Row, mixing film thickness 55nm；N-type layer is BPhen, and the thickness of N-type layer is 15nm；Electronics note is provided on ultraviolet light response layer 4
Enter layer 5, and the hybrid films that electron injecting layer is LiF and CsCO3, the mixed proportion of LiF and CsCO3 is are in mass ratio 1：1 into
Row, the thickness of electron injecting layer 5 is 2nm；Reflection conducting cathode layer 6 is provided on electron injecting layer 5, reflects conducting cathode layer 6
For Al, the thickness 50nm of conducting cathode layer 6 is reflected；Transparent substrates are substrate of glass, and the thickness of the transparent substrates is 5mm；
Transparent conductive anode 2 is ITO, and the thickness of transparent conductive anode 2 is 100nm.A kind of preparation method of UV photodetector,
It is characterized in that：The preparation of the UV photodetector includes the following steps：S1, to the transparent base with transparent conductive anode
Bottom is cleaned, and makes its surface cleaning, and transparent substrates are sequentially placed into 20% sodium hydrate aqueous solution, acetone, ethyl alcohol and isopropyl
It is cleaned by ultrasonic in alcohol, each ultrasound 10min, then UV ozone processing 10min；S2, the injection enhancing of one hole of growth regulation
Layer, the method for using self assembly grows Au nano particle of the one layer of nominal thickness for 1nm on transparent conductive anode, and controls Au
The grain size of nano particle is 20nm；S3, two hole of the heat deposition growth regulation injection enhancing successively in ultrahigh vacuum hot evaporation equipment
Layer, third hole are injected enhancement layer, ultraviolet light response layer, electron injecting layer and reflection conducting cathode layer, are controlled in deposition process
Vacuum thermal evaporation equipment is 10-5Pa, heat deposition rate control are organic material 0.1nm/s, inorganic and metal material 0.5nm/s.
Detector is 2.3*10 in the detectivity for 365nm ultraviolet lights in the present embodiment12Jones.
Embodiment two
A kind of UV photodetector, including transparent substrates 1, transparent conductive anode 2, it is characterised in that：Electrically conducting transparent sun
Pole 2 is located on transparent substrates 1, and injection enhancement layer 3 in hole is set on transparent conductive anode 2, hole injection enhancement layer 3
For three-decker, enhance including the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and the injection of third hole
Layer 303, and the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and third hole injection enhancement layer 303 according to
Secondary to be layered on transparent conductive anode 2, enhancement layer 301 is injected for Au nano particles in the first hole, and the name of Au nano particles
Adopted thickness is 2.5nm, and the grain size of Au nano particles is 25nm, and the second hole injection enhancement layer 302 is laminated in the injection of the first hole
On enhancement layer 301, and the second hole injection enhancement layer 302 uses organic broad stopband electron transport material, second hole
The thickness for injecting enhancement layer 302 is 10nm, and injection enhancement layer in third hole is provided on the second hole injection enhancement layer 302
303, third hole enhancement layer 303 uses NPB, and the thickness of third hole injection enhancement layer 303 is 15nm；Enhancement layer is injected in hole
It is provided with ultraviolet light response layer 4 on 3, and ultraviolet light response layer 4 is PIN type structure, wherein P-type layer is m-MTDATA, thickness
8nm；The mixed proportion of hybrid films of the I types layer for m-MTDATA and BPhen, m-MTDATA and BPhen is are in molar ratio 1：3 into
Row, mixing film thickness 55nm；N-type layer is BPhen, and the thickness of N-type layer is 15nm；Electronics note is provided on ultraviolet light response layer 4
Enter layer 5, and the hybrid films that electron injecting layer is LiF and CsCO3, the mixed proportion of LiF and CsCO3 is are in mass ratio 1：1 into
Row, the thickness of electron injecting layer 5 is 2nm；Reflection conducting cathode layer 6 is provided on electron injecting layer 5, reflects conducting cathode layer 6
For low workfunction metal, including Al, Ag or Mg, the thickness 500nm of conducting cathode layer 6 is reflected；Transparent substrates PET flexible polymers
Object substrate, and the thickness of the transparent substrates is 8mm；Transparent conductive anode 2 is FTO, and the thickness of the transparent conductive anode 2
For 150nm.A kind of preparation method of UV photodetector, it is characterised in that：The preparation of the UV photodetector includes
Following steps：S1, the transparent substrates with transparent conductive anode are cleaned, makes its surface cleaning, transparent substrates successively
It is put into 20% sodium hydrate aqueous solution, acetone, ethyl alcohol and isopropanol and is cleaned by ultrasonic, each ultrasound 10min is then ultraviolet
Ozone treatment 10min；S2, one hole of growth regulation injection enhancement layer, are grown using the method for self assembly on transparent conductive anode
One layer of nominal thickness is the Au nano particles of 2.5nm, and it is 25nm to control the grain sizes of Au nano particles；S3, ultrahigh vacuum heat
Two hole of heat deposition growth regulation injection enhancement layer, third hole injection enhancement layer, ultraviolet light response layer are electric successively in evaporated device
Sub- implanted layer and reflection conducting cathode layer, control vacuum thermal evaporation equipment is in 10-5Pa, heat deposition rate control in deposition process
For organic material 0.2nm/s, inorganic and metal material 1nm/s.Detector is for the detectivity of 365nm ultraviolet lights in the present embodiment
For 1.2*1012Jones.
Embodiment three
A kind of UV photodetector, including transparent substrates 1, transparent conductive anode 2, transparent conductive anode 2 is located at transparent
Injection enhancement layer 3 in hole is set on substrate 1, and on transparent conductive anode 2, hole injection enhancement layer 3 is three-decker,
Enhancement layer 303, and first are injected including the first hole injection enhancement layer 301, the second hole injection enhancement layer 302 and third hole
Hole injection enhancement layer 301, the second hole injection enhancement layer 302 and third hole injection enhancement layer 303 are sequentially laminated on transparent
On conductive anode 2, the first hole injection enhancement layer 301 is Au nano particles, and the nominal thickness of Au nano particles is 5nm,
The grain size of Au nano particles is 30nm, and the second hole injection enhancement layer 302 is laminated on the first hole injection enhancement layer 301,
And second hole injection enhancement layer 302 use organic broad stopband electron transport material, second hole injection enhancement layer 302
Thickness is 15nm, and injection enhancement layer 303 in third hole is provided on the second hole injection enhancement layer 302, and third hole increases
For strong layer 303 using rubrene, the thickness of third hole injection enhancement layer 303 is 15nm；It is provided on hole injection enhancement layer 3
Ultraviolet light response layer 4, and ultraviolet light response layer 4 is PIN type structure, wherein P-type layer is m-MTDATA, thickness 8nm；I type layers are
The mixed proportion of the hybrid films of m-MTDATA and BPhen, m-MTDATA and BPhen is are in molar ratio 1：3 carry out, and mix film thickness
Spend 55nm；N-type layer is BPhen, and the thickness of N-type layer is 15nm；Electron injecting layer 5, and electronics are provided on ultraviolet light response layer 4
The mixed proportion of hybrid films of the implanted layer for LiF and CsCO3, LiF and CsCO3 is are in mass ratio 1：1 carries out, electron injecting layer
5 thickness is 2nm；Reflection conducting cathode layer 6 is provided on electron injecting layer 5, reflection conducting cathode layer 6 is Ag, and reflection is conductive
The thickness 1000nm of cathode layer 6；Transparent substrates are substrate of glass, and the thickness of the transparent substrates is 12mm；Electrically conducting transparent sun
Pole 2 is IGZO, and the thickness of transparent conductive anode 2 is 200nm.A kind of preparation method of UV photodetector, feature exist
In：The preparation of the UV photodetector includes the following steps：S1, the transparent substrates with transparent conductive anode are carried out clearly
It washes, makes its surface cleaning, transparent substrates are sequentially placed into 20% sodium hydrate aqueous solution, acetone, ethyl alcohol and isopropanol and are carried out
It is cleaned by ultrasonic, each ultrasound 10min, then UV ozone processing 10min；S2, one hole of growth regulation injection enhancement layer, using certainly
The method of assembling grows one layer of nominal thickness on transparent conductive anode and is the Au nano particles of 1-5nm, and control Au nanometers
The grain size of grain is 30nm；S3, enhancement layer, third are injected in two hole of heat deposition growth regulation successively in ultrahigh vacuum hot evaporation equipment
Enhancement layer, ultraviolet light response layer, electron injecting layer and reflection conducting cathode layer are injected in hole, and control Vacuum Heat steams in deposition process
Coating apparatus is 10-5Pa, heat deposition rate control are organic material 0.3nm/s, inorganic and metal material 2nm/s.In the present embodiment
Detector is 4.1*10 in the detectivity for 365nm ultraviolet lights12Jones.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (7)
1. a kind of UV photodetector, including transparent substrates (1), transparent conductive anode (2), it is characterised in that：It is described transparent
Conductive anode (2) is set to hole injection enhancement layer (3) on transparent substrates (1), and on transparent conductive anode (2),
The hole injection enhancement layer (3) is three-decker, including the first hole injection enhancement layer (301), the injection enhancing of the second hole
Layer (302) and third hole injection enhancement layer (303), and the first hole injection enhancement layer (301), the second hole injection enhancement layer
(302) it is sequentially laminated on transparent conductive anode (2) with third hole injection enhancement layer (303), the first hole injection
Enhancement layer (301) is Au nano particles, and the nominal thickness of Au nano particles is 1-5nm, and the grain size of Au nano particles is 20-
30nm, the second hole injection enhancement layer (302) are laminated on the first hole injection enhancement layer (301), and the second hole
It injects enhancement layer (302) and uses organic broad stopband electron transport material, the thickness of the second hole injection enhancement layer (302) is
5-15nm, and third hole injection enhancement layer (303) is provided on the second hole injection enhancement layer (302), the third is empty
For cave enhancement layer (303) using organic hole transport material, the thickness that enhancement layer (303) is injected in the third hole is 15nm, and
The energy level of the HOMO highest occupied molecular orbital of third hole injection enhancement layer (303) is 5.3-5.5eV.
2. a kind of UV photodetector according to claim 1, it is characterised in that：The hole injection enhancement layer (3)
On be provided with ultraviolet light response layer (4), and ultraviolet light response layer (4) is PIN type structure, wherein P-type layer is m-MTDATA, thickness
8nm；The mixed proportion of hybrid films of the I types layer for m-MTDATA and BPhen, m-MTDATA and BPhen is are in molar ratio 1：3 into
Row, mixing film thickness 55nm；N-type layer is BPhen, and the thickness of N-type layer is 15nm.
3. a kind of UV photodetector according to claim 2, it is characterised in that：On the ultraviolet light response layer (4)
Electron injecting layer (5) is provided with, and the hybrid films that the electron injecting layer is LiF and CsCO3, the mixing ratio of LiF and CsCO3
Example is is in mass ratio 1：1 carries out, and the thickness of the electron injecting layer (5) is 2nm.
4. a kind of UV photodetector according to claim 3, it is characterised in that：It is set on the electron injecting layer (5)
Reflection conducting cathode layer (6) is equipped with, and the reflection conducting cathode layer (6) is low workfunction metal, including Al, Ag or Mg,
The thickness 50-1000nm of the reflection conducting cathode layer (6).
5. a kind of UV photodetector according to claim 1, it is characterised in that：The transparent substrates are substrate of glass
Or flexible polymer substrate, and the thickness of the transparent substrates is 5-12mm.
6. a kind of UV photodetector according to claim 1, it is characterised in that：The transparent conductive anode (2) is
The transparent metal oxide of high work function, including ITO, FTO and IGZO, and the thickness of the transparent conductive anode (2) is 100-
200nm。
7. a kind of preparation method of UV photodetector according to claim 1, it is characterised in that：The ultraviolet light photo
The preparation of detector includes the following steps：
S1, the transparent substrates with transparent conductive anode are cleaned, makes its surface cleaning, transparent substrates are sequentially placed into
It is cleaned by ultrasonic in 20% sodium hydrate aqueous solution, acetone, ethyl alcohol and isopropanol, each ultrasound 10min, then UV ozone
Handle 10min；
S2, one hole of growth regulation injection enhancement layer, one layer of name thickness is grown using the method for self assembly on transparent conductive anode
Spend the Au nano particles for 1-5nm, and control Au nano particles grain size be 20-30nm；
S3, two hole of heat deposition growth regulation injection enhancement layer, the injection of third hole increase successively in ultrahigh vacuum hot evaporation equipment
Strong layer, ultraviolet light response layer, electron injecting layer and reflection conducting cathode layer, control vacuum thermal evaporation equipment exists in deposition process
10-5Pa, heat deposition rate control are organic material 0.1-0.3nm/s, inorganic and metal material 0.5-2nm/s.
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| WO2016033167A1 (en) * | 2014-08-28 | 2016-03-03 | E. I. Du Pont De Nemours And Company | Compositions for electronic applications |
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| CN105359293A (en) * | 2013-07-02 | 2016-02-24 | 欧司朗Oled股份有限公司 | Optoelectronic component, organic functional layer, and method for producing an optoelectronic component |
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| WO2016033167A1 (en) * | 2014-08-28 | 2016-03-03 | E. I. Du Pont De Nemours And Company | Compositions for electronic applications |
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