CN108864414A - Embellishing cathode interface material, solar battery and preparation method thereof and application - Google Patents
Embellishing cathode interface material, solar battery and preparation method thereof and application Download PDFInfo
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Abstract
The invention discloses a kind of embellishing cathode interface materials, solar battery and preparation method thereof and application.The embellishing cathode interface material includes PFN and/or PFN derivative.The organic thin film solar cell includes the top electrode layer set gradually along direction initialization, embellishing cathode interface layer, light absorption active layer, hole transmission layer and hearth electrode, and the embellishing cathode interface layer includes the embellishing cathode interface material.Embellishing cathode interface material provided by the invention, modifying interface is carried out using cathode of the PFN with permanent electric dipole moment to organic thin film solar cell, it is inserted into suitable electron transfer layer, built in field can effectively be enhanced, so as to improve carrier transport and reduce recombination losses, cathode work function number can be reduced, reduce electron injection barrier, electron injection efficiency is improved, so that the luminous efficiency of device, service life and stability be greatly improved, and then promotes battery efficiency.
Description
Technical field
The present invention relates to a kind of improvement embellishing cathode interface materials, in particular to a kind of to use PFN and its derivative to yin
Pole carries out the embellishing cathode interface material of modifying interface, solar battery and preparation method thereof, and answering in photovoltaic device
With belonging to photoelectric functional material and photovoltaic device technical field.
Background technique
Solar energy has many advantages, such as clean pollution-free, resourceful, sustainable and safe, and solar battery is due to can be by light
It can be directly translated into electric energy, therefore be constantly subjected to the concern of researcher.With production cost, the low, energy returns organic solar batteries
Receive the period it is short, the simple and environmentally-friendly property of preparation process is good, raw material sources extensively, can large area preparation, flexible wearable device can be prepared
The advantages that part.But organic solar batteries also have, and carrier mobility is low, device lifetime is short, energy conversion efficiency is low, can not
The disadvantages of realizing large-scale commercial.
The photoactive layer ingredient of organic polymer solar cell is generally by electron donor material D and electron acceptor material
The blend of A composition, is added between ITO positive conductive electrode and metal negative electrode.Photoactive layer generates coulomb constraint after absorbing photon
Electron hole pair, i.e. exciton, then exciton generates electrons and holes in electron donor and electron acceptor interfacial separation.Electronics and
Hole collected by cathode and anode and is extracted respectively, is flowed along external circuit, and photoelectric current is formed.Due to organic semiconducting materials
Carrier mobility is usually very low, can have a large amount of damages during to electrode movement in the carrier separated on interface
It loses, therefore efficiency is not often high.
Summary of the invention
The main purpose of the present invention is to provide a kind of embellishing cathode interface material, solar battery and preparation method thereof with
Using with overcome the deficiencies in the prior art.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
The embodiment of the invention provides a kind of embellishing cathode interface materials comprising:PFN or PFN derivative;The PFN
Chinese be poly- [(the fluoro- naphthalene of 9,9- dioctyl -2,7-)-(9,9- bis- (3- (N, N- dimethylamino) propyl)) -2,7-
Fluorenes)], chemical formula be poly [(9,9-bis (3'- (N, N-dimethylamino) propyl) -2,7-fluorene)-alt-2,
7- (9,9-ioctylfluorene)], and the PFN includes structure shown in formula (1):
Wherein, the value range of n is 10~100.
The embodiment of the invention also provides a kind of embellishing cathode interface layers, and it includes embellishing cathode interface materials above-mentioned.
The embodiment of the invention also provides embellishing cathode interface material above-mentioned or embellishing cathode interface layers in preparing photoelectricity
Application in sub- device.
For example, the embodiment of the invention also provides a kind of organic thin film solar cells, including successively set along direction initialization
Top electrode layer, embellishing cathode interface layer, light absorption active layer, hole transmission layer and the hearth electrode set, the cathode interface are repaired
Adoring layer includes embellishing cathode interface material or embellishing cathode interface layer above-mentioned.
The embodiment of the invention also provides the production methods of organic thin film solar cell above-mentioned comprising:
(1) conductive substrates are provided, the conductive substrates include hearth electrode, and hole transport is arranged in conductive substrates later
Layer;
(2) light absorption active layer is formed on the hole transport layer;
(3) embellishing cathode interface layer is formed on the light absorption active layer using embellishing cathode interface material above-mentioned;
(4) top electrode is formed on the embellishing cathode interface layer, obtains the organic thin film solar cell.
Compared with prior art, advantages of the present invention includes:
(1) embellishing cathode interface material provided by the invention, using with permanent electric dipole moment PFN to organic film too
The cathode of positive energy battery carries out modifying interface, that is, is inserted into suitable electron transfer layer, can effectively enhance built in field, so as to improve
Carrier transport simultaneously reduces recombination losses, can reduce cathode work function number, reduces electron injection barrier, improves electron injection effect
Rate so that the luminous efficiency of device, service life and stability be greatly improved, and then promotes battery efficiency;
(2) organic thin film solar cell provided by the invention, is modified by PFN, and organic thin film solar can be made electric
Open-circuit voltage, short circuit current and the fill factor in pond are improved simultaneously, i.e., open-circuit voltage increases to 0.74V, and short circuit current increases
It is added to 16.20mA/cm2, fill factor increases to 0.59, and battery efficiency rises to 7.07%;
(3) production method provided by the invention is simple and effective, low in cost, can be applied not only to prepare organic film too
Positive energy battery, can also be applied to Organic Light Emitting Diode OLED and other field of optoelectronic devices.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of organic thin film solar cell in an exemplary embodiments of the invention;
Fig. 2 is the SEM figure of organic thin film solar cell prepared in the embodiment of the present invention 1;
Fig. 3 is the I-V curve figure of organic thin film solar cell prepared in the embodiment of the present invention 1;
Fig. 4 is the external quantum efficiency figure of organic thin film solar cell prepared in an exemplary embodiments of the invention.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose of the invention
Technical solution as follows will be further explained the technical solution, its implementation process and principle etc..
A kind of embellishing cathode interface material that the one aspect of the embodiment of the present invention provides comprising:PFN or PFN is derivative
Object;The Chinese of the PFN is poly- [(the fluoro- naphthalene of 9,9- dioctyl -2,7-)-(bis- (3- (N, N- dimethylamino) third of 9,9-
Base)) -2,7- fluorenes)], chemical formula is poly [(9,9-bis (3'- (N, N-dimethylamino) propyl) -2,7-
Fluorene)-alt-2,7- (9,9-ioctylfluorene)], and the PFN includes structure shown in formula (1):
Wherein, the value range of n is 10~100.
In some embodiments, the PFN derivative includes PFN-Br etc..
A kind of embellishing cathode interface layer that the other side of the embodiment of the present invention provides, it includes cathode interfaces above-mentioned
Decorative material.
Preferably, the embellishing cathode interface layer with a thickness of 1~50nm, especially preferably 5~20nm, thickness control can
To be adjusted by solution concentration and rotation speed.
The embodiment of the invention also provides embellishing cathode interface material above-mentioned or embellishing cathode interface layers in preparing photoelectricity
Application in sub- device.
Preferably, the opto-electronic device includes the opto-electronic devices such as solar battery and/or Organic Light Emitting Diode.
Preferably, the solar battery includes organic thin film solar cell and/or perovskite solar battery, device
Configuration can use conventional positive structure, can also be using the structures such as inverting.
For example, refering to Figure 1, the embodiment of the invention also provides a kind of organic thin film solar cell, including edge
Top electrode layer, embellishing cathode interface layer, light absorption active layer, hole transmission layer and the hearth electrode that direction initialization is set gradually,
The embellishing cathode interface layer includes embellishing cathode interface material or embellishing cathode interface layer above-mentioned.
Wherein, the material of the embellishing cathode interface layer can also be PFEN, PFI etc., also can choose existing on the market
Acetylacetone,2,4-pentanedione zirconium (zirconium acetylacetonate (ZrAcac)), lithium fluoride (LiF), cesium fluoride (CsF), carbonic acid
Caesium (Cs2CO3), zinc oxide (ZnO), titanium oxide (TiOx), calcium (Ca), PFN-Br, PFEN, PFI etc..
Preferably, the open-circuit voltage of the organic thin film solar cell is 0.70~0.75V, short circuit current 15.10
~17.40mA/cm2, fill factor is 0.50~0.65, and battery efficiency is 6.40~7.50%, cell active area 0.04
~0.16cm2。
In some embodiments, the organic thin film solar cell further includes conductive substrates, and the conductive substrates include
The hearth electrode, the hole transmission layer are set in the conductive substrates.
Preferably, the material of the hole transmission layer includes poly- (3,4-ethylene dioxythiophene):Kayexalate salt
(PEDOT:PSS), graphene oxide (GO), molybdenum trioxide (MoO3), nickel protoxide (NiO), vanadic anhydride (V2O5), three
Tungsten oxide (WO3), 2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell, two fluorenes (Spiro-OMeTAD)
In any one or two or more combinations, but not limited to this.
Preferably, the hole transmission layer with a thickness of 30~40nm.
Preferably, it is 1 that the material of the light absorption active layer, which includes mass ratio,:2~1:6 poly- [[9- (1- octyl nonyl
Base) -9H- carbazole -2,7- diyl] -2,5- thiophene diyl -2,1,3- diazosulfide -4,7- diyl -2,5- thiophene diyl]
(PCDTBT) and [6,6]-phenyl C71 methyl butyrate (PC70BM), mass ratio 1:1~1:1.5 PTB7 and PC71BM, poly- 3-
Hexyl thiophene and [6,6]-phenyl-C61- methyl butyrate (P3HT:PCBM), poly- [2- methoxyl group, 5- (3 ', 7 ' dimethyl-pungent oxygen
Base)]-to penylene ethylene and [6,6]-phenyl-C61- methyl butyrate (MDMO-PPV:PCBM),P3HT:ICBA,PDPP:PC71BM、
PBDTTT-C:PC71BM and PFO-DBT35:PC61Any one in BM or two or more combinations, but not limited to this.
Preferably, the solvent of the light absorption active layer includes chlorobenzene, volume ratio 90:10~99:1 chlorobenzene and 1,8-
Any one in diiodo-octane, toluene and dichloro-benzenes or two or more combinations, but not limited to this.
Preferably, the additive of the light absorption active layer includes appointing in 1,8- diiodo-octane, nitrobenzene and 1- chloronaphthalene
Meaning a combination of one or more, but not limited to this.
Preferably, the light absorption active layer with a thickness of 80~200nm.
Preferably, the material of the top electrode includes gold, silver, any one or two or more combinations in copper and mickel,
But not limited to this.
Preferably, the top electrode with a thickness of 80~200nm.
Preferably, the material of the conductive substrates includes electro-conductive glass, such as ito glass.
Further, the conductive substrates with a thickness of 100~500nm.
In another example the present invention also provides a kind of perovskite solar battery, including along the top that direction initialization is set gradually
Electrode layer, embellishing cathode interface layer, light absorption active layer, hole transmission layer and hearth electrode, the embellishing cathode interface layer packet
Include embellishing cathode interface material above-mentioned.
Preferably, the light absorption active layer includes perovskite material.
Preferably, the top electrode layer, hole transmission layer, hearth electrode material respectively with top electrode layer above-mentioned, hole
Transport layer, the material of hearth electrode are identical.
Preferably, the perovskite solar battery further includes conductive substrates, and the conductive substrates include the hearth electrode,
The hole transmission layer is set in the conductive substrates.
Further, the material of the conductive substrates includes electro-conductive glass.
In conclusion by above-mentioned technical proposal, embellishing cathode interface material provided by the invention, using with permanent electric
The PFN of dipole moment carries out modifying interface to the cathode of organic thin film solar cell, that is, is inserted into suitable electron transfer layer, can have
Effect enhancing built in field, so as to improve carrier transport and reduces recombination losses, can reduce cathode work function number, reduces electronics note
Enter potential barrier, improve electron injection efficiency, so that the luminous efficiency of device, service life and stability be greatly improved, and then promotes battery
Efficiency;It can make open-circuit voltage, short circuit current and the fill factor of organic thin film solar cell while be improved, that is, open a way
Voltage increases to 0.74V, and short circuit current increases to 16.20mA/cm2, fill factor increases to 0.59, and battery efficiency rises to
7.07%.
The other side of the embodiment of the present invention additionally provides the production method of organic thin film solar cell above-mentioned,
Including:
(1) conductive substrates are provided, the conductive substrates include hearth electrode, and hole transport is arranged in conductive substrates later
Layer;
(2) light absorption active layer is formed on the hole transport layer;
(3) embellishing cathode interface layer is formed on the light absorption active layer using embellishing cathode interface material above-mentioned;
(4) top electrode is formed on the embellishing cathode interface layer, obtains the organic thin film solar cell.
In some embodiments, step (1) includes:It is arranged before hole transmission layer in conductive substrates, first to conductive base
It successively cleaned, be surface-treated in bottom.
Preferably, the cleaning step includes successively using glass cleaning solution, deionized water, acetone, dehydrated alcohol, isopropyl
Alcohol carries out ultrasonic cleaning,
Preferably, described be surface-treated includes:First by the surface of conductive substrates with being dried with nitrogen, plasma table is carried out later
Surface treatment,
In some embodiments, step (1) further includes:The material of hole transmission layer is formed in a manner of spin coating described
In conductive substrates.
Preferably, the speed of the spin coating is 1000~6000 revs/min.
Preferably, the annealing temperature of the hole transmission layer is 80~130 DEG C, and annealing time is 10~60 minutes.
In some embodiments, step (2) includes:With spin-coating method, pulling film forming method, drop-coating, silk screen print method, it is sprayed
The material of light absorption active layer is formed in the hole and passed by any one mode in rubbing method and the coating of slit type extrusion pressing type
On defeated layer, but not limited to this.
Preferably, step (3) includes:It is in a manner of spin coating that embellishing cathode interface material above-mentioned is living in the light absorption
On property layer.
Preferably, the speed of the spin coating is 1000~5000 revs/min.
Preferably, the concentration of the embellishing cathode interface material is 2~10mg/ml.
In some embodiments, step (4) includes:Top electrode is formed in the embellishing cathode interface with vacuum vapour deposition
On layer.
Preferably, the vacuum degree that the vacuum vapour deposition uses is 1 × 10-4Pa~6 × 10-4Pa, temperature are 30~40
℃。
In conclusion production method provided by the invention is simple and effective, and it is low in cost, it can be applied not only to prepare organic
Thin-film solar cells can also be applied to Organic Light Emitting Diode OLED and other field of optoelectronic devices.
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment and attached
Figure, is further elaborated technical solution of the present invention, the method in the following example is unless otherwise instructed
The conventional method of this field.
Embodiment 1
1.ITO glass cleaning.Successively surpassed using glass cleaning solution, deionized water, acetone, dehydrated alcohol, isopropanol
Sound wave cleans 30min.It with Surface Treatment with Plasma is carried out after being dried with nitrogen surface, cleans surface more, enhances wellability.
2. prepared by hole transmission layer.By PEDOT:PSS is spin-coated on ito glass surface, and spin speed is 3500 rpms,
Spin-coating time be 60 seconds, after spin coating on warm table 100 DEG C of thermal anneal process 30min.
3. light absorption active layer film preparation.By PTB7:PCBM is according to mass ratio 1:4 weigh, using chlorobenzene as organic
Solvent prepares light absorption active layer precursor solution.By precursor solution with 600 rpms of spin-rate in hole
In transport layer, spin-coating time is 1 minute.
4. prepared by embellishing cathode interface layer.PFN material is dissolved in highly polar solvent such as methanol, a small amount of acetic acid is added, obtains
To the PFN solution of 5mg/ml, it is spin-coated on light absorption active layer later, with a thickness of 5nm.By interface-modifying layer PFN with
For 3000 rpms of spin-rate on light absorption active layer, spin-coating time is 1 minute.
5. vacuum vapour deposition prepares aluminium electrode.The sheet glass of the good embellishing cathode interface layer of spin coating is put into vacuum evaporation instrument
In.It is evacuated to 4*10-4Pa, then evaporating Al electrode, obtains organic thin film solar cell.
The effective area of the obtained organic thin film solar cell of the present embodiment is 0.12cm2, SEM figure is shown in Figure 2,
Its current density voltage curve figure is shown in Figure 3, its performance parameter is listed in Table 1 below after tested.Fig. 4 is please referred to as the present invention
External quantum efficiency (EQE) figure of the obtained organic thin film solar cell of one exemplary embodiments, after being integrated to EQE figure, short circuit
Electric current Jsc=14.01mA/cm2, external quantum efficiency (EQE) figure of the present embodiment 1 can refer to Fig. 4.
Comparative example 1
Do not use PFN of the invention as embellishing cathode interface material, the organic thin film solar cell of preparation, electric current
Density-voltage curve figure is shown in Figure 3, and after tested, performance parameter is listed in Table 1 below.
The performance parameter of 1 embodiment 1 of table and the obtained organic thin film solar cell of comparative example 1
Embodiment 2
1.ITO glass cleaning.Successively surpassed using glass cleaning solution, deionized water, acetone, dehydrated alcohol, isopropanol
Sound wave cleans 30min.It with Surface Treatment with Plasma is carried out after being dried with nitrogen surface, cleans surface more, enhances wellability.
2. prepared by hole transmission layer.By PEDOT:PSS is spin-coated on ito glass surface, and spin speed is 3500 rpms,
Spin-coating time be 60 seconds, after spin coating on warm table 100 DEG C of thermal anneal process 30min.
3. light absorption active layer film preparation.By PTB7:PCBM is according to mass ratio 1:4 weigh, using chlorobenzene as organic
Solvent prepares light absorption active layer precursor solution, by precursor solution with 600 rpms of spin-rate in hole
In transport layer, spin-coating time is 1 minute.
4. prepared by embellishing cathode interface layer.The PFN material of 5mg/ml is dissolved in highly polar solvent such as methanol, addition is a small amount of
Acetic acid obtains the PFN solution of 5mg/ml, is spin-coated on light absorption active layer later, with a thickness of 5nm.By interface-modifying layer
For PFN with 3000 rpms of spin-rate on light absorption active layer, spin-coating time is 1 minute.
5. vacuum vapour deposition prepares aluminium electrode.The sheet glass of the good embellishing cathode interface layer of spin coating is put into vacuum evaporation instrument
In.It is evacuated to 4*10-4Pa, then evaporating Al electrode, obtains organic thin film solar cell.
Embodiment 3
1.ITO cleaning.Ultrasonic wave is successively carried out using glass cleaning solution, deionized water, acetone, dehydrated alcohol, isopropanol
Cleaning 30 minutes.It with Surface Treatment with Plasma is carried out after being dried with nitrogen surface, cleans surface more, enhances wellability.
2. preparing MoO3Layer.Sheet glass is put into vacuum evaporation instrument, 3*10 is evacuated to-4Then Pa existsSteaming
MoO is prepared under hair rate3Layer, with a thickness of 8nm.
3. spin coating photoactive layer.By PTB7:PCBM is according to mass ratio 1:4 weigh, and using chlorobenzene as organic solvent, prepare
Light absorption active layer precursor solution.On the hole transport layer with 600 rpms of spin-rate by precursor solution,
Spin-coating time is 1 minute.
4. prepared by embellishing cathode interface layer.The PFN-Br material of 10mg/ml is dissolved in highly polar solvent such as methanol, is added
A small amount of acetic acid obtains the PFN-Br solution of 10mg/ml, is spin-coated on light absorption active layer later, with a thickness of 10nm.By boundary
For face decorative layer PFN-Br with 2500 rpms of spin-rate on light absorption active layer, spin-coating time is 1 minute.
5. electrode A l layers of preparation.In MoO3The Al film that 60nm is deposited on layer, obtains organic thin film solar cell.
By 1-3 of the embodiment of the present invention, using the PFN with permanent electric dipole moment to having it can be seen from experimental result
The cathode of machine thin-film solar cells carries out modifying interface, that is, is inserted into suitable electron transfer layer, can effectively enhance built in field,
So as to improve carrier transport and reduce recombination losses, cathode work function number can be reduced, reduce electron injection barrier, improves electronics
Injection efficiency so that the luminous efficiency of device, service life and stability be greatly improved, and then promotes battery efficiency, can make organic
Open-circuit voltage, short circuit current and the fill factor of thin-film solar cells are improved simultaneously, i.e., open-circuit voltage increases to
0.74V, short circuit current increase to 16.20mA/cm2, fill factor increases to 0.59, and battery efficiency rises to 7.07%.
In addition, inventor also refers to the mode of embodiment 1- embodiment 3, with the other raw materials listed in this specification
It is tested with condition etc., and the solar energy that luminous efficiency is high, the service life is long, stability is high, battery efficiency is high has equally been made
Battery device.
It should be appreciated that the technical concepts and features of above-described embodiment only to illustrate the invention, its object is to allow be familiar with this
The personage of item technology cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all
Equivalent change or modification made by Spirit Essence according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of embellishing cathode interface material, it is characterised in that including:PFN and/or PFN derivative;The PFN is poly- [(9,9-
The fluoro- naphthalene of dioctyl -2,7-)-(9,9- bis- (3- (N, N- dimethylamino) propyl)) -2,7- fluorenes)], and the PFN includes formula
(1) structure shown in:
Wherein, the value of n is 10~100.
2. embellishing cathode interface material according to claim 1, it is characterised in that:The PFN derivative includes PFN-Br.
3. a kind of embellishing cathode interface layer, it is characterised in that include embellishing cathode interface material of any of claims 1 or 2;It is excellent
Choosing, the embellishing cathode interface layer with a thickness of 1~50nm.
4. embellishing cathode interface material as claimed in claim 1 or 2 or embellishing cathode interface layer as claimed in claim 3 are in system
Application in standby opto-electronic device;Preferably, the opto-electronic device includes solar battery and/or Organic Light Emitting Diode;
Preferably, the solar battery includes organic thin film solar cell and/or perovskite solar battery.
5. a kind of organic thin film solar cell, including set gradually along direction initialization top electrode layer, embellishing cathode interface layer,
Light absorption active layer, hole transmission layer and hearth electrode, it is characterised in that:The embellishing cathode interface layer includes claim 1
Or embellishing cathode interface material described in 2 or embellishing cathode interface layer as claimed in claim 3;Preferably, the organic film
The open-circuit voltage of solar battery is 0.70~0.75V, and short circuit current is 15.10~17.40mA/cm2, fill factor 0.50
~0.65, battery efficiency is 6.40~7.50%, and cell active area is 0.04~0.16cm2。
6. organic thin film solar cell according to claim 5, it is characterised in that it further include conductive substrates, the conduction
Substrate includes the hearth electrode, and the hole transmission layer is set in the conductive substrates.
7. organic thin film solar cell according to claim 5, it is characterised in that:The material packet of the hole transmission layer
Include poly- (3,4-ethylene dioxythiophene):Kayexalate salt, graphene oxide, molybdenum trioxide, nickel protoxide, five oxidations
Two vanadium, tungstic acid, 2,2', any one in 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell, two fluorenes
Or two or more combination;Preferably, the hole transmission layer with a thickness of 30~40nm;And/or the light absorption active layer
Material include mass ratio be 1:2~1:6 poly- [[9- (1- octyl nonyl) -9H- carbazole -2,7- diyl] -2,5- thiophene two
Base -2,1,3- diazosulfide -4,7- diyl -2,5- thiophene diyl] and [6,6]-phenyl C71 methyl butyrate, mass ratio 1:1
~1:1.5 PTB7 and PC71BM, poly- 3- hexyl thiophene and [6,6]-phenyl-C61- methyl butyrate, it is poly- [2- methoxyl group, 5- (3 ',
7 ' dimethyl-octyloxies)]-to penylene ethylene and [6,6]-phenyl-C61- methyl butyrate, P3HT:ICBA,PDPP:PC71BM、
PBDTTT-C:PC71BM and PFO-DBT35:PC61Any one in BM or two or more combinations;Preferably, the light absorption
The solvent of active layer includes chlorobenzene, volume ratio 90:10~99:1 chlorobenzene and 1, in 8- diiodo-octane, toluene and dichloro-benzenes
Any one or two or more combinations;Preferably, the additive of the light absorption active layer includes 1,8- diiodo-octane, nitro
Any one in benzene and 1- chloronaphthalene or two or more combinations;Preferably, the light absorption active layer with a thickness of 80~
200nm;And/or the material of the top electrode includes gold, silver, any one or two or more combinations in copper and mickel;It is preferred that
, the top electrode with a thickness of 80~200nm;And/or the material of the conductive substrates includes electro-conductive glass;Preferably, institute
State conductive substrates with a thickness of 100~500nm.
8. a kind of perovskite solar battery, including set gradually along direction initialization top electrode layer, embellishing cathode interface layer, light
Absorb active layer, hole transmission layer and hearth electrode, it is characterised in that:The embellishing cathode interface layer includes claims 1 or 2
The embellishing cathode interface material or embellishing cathode interface layer as claimed in claim 3;Preferably, the light absorption active layer
Including perovskite material;Preferably, the top electrode layer, the material respectively and described in claim 7 of hole transmission layer, hearth electrode
Top electrode layer, hole transmission layer, the material of hearth electrode it is identical;Preferably, the perovskite solar battery further includes conduction
Substrate, the conductive substrates include the hearth electrode, and the hole transmission layer is set in the conductive substrates;Preferably, institute
The material for stating conductive substrates includes electro-conductive glass.
9. the production method of organic thin film solar cell as claimed in claim 5, it is characterised in that including:
(1) conductive substrates are provided, the conductive substrates include hearth electrode, set gradually hole transport in conductive substrates later
Layer;
(2) light absorption active layer is formed on the hole transport layer;
(3) cathode interface is formed on the light absorption active layer using embellishing cathode interface material of any of claims 1 or 2
Decorative layer;
(4) top electrode is formed on the embellishing cathode interface layer, obtains the organic thin film solar cell.
10. manufacturing method according to claim 9, which is characterized in that step (1) includes:It is arranged in conductive substrates empty
Before the transport layer of cave, first conductive substrates are successively cleaned, are surface-treated;Preferably, the cleaning step includes successively adopting
Ultrasonic cleaning is carried out with glass cleaning solution, deionized water, acetone, dehydrated alcohol, isopropanol;Preferably, the surface treatment
Including:First by the surface of conductive substrates with being dried with nitrogen, Surface Treatment with Plasma is carried out later;And/or step (1) includes:With
The material of hole transmission layer is formed in the conductive substrates by the mode of spin coating;Preferably, the speed of the spin coating is 1000
~6000 revs/min;Preferably, the annealing temperature of the hole transmission layer is 80~130 DEG C, and annealing time is 10~60 points
Clock;And/or step (2) includes:With spin-coating method, pulling film forming method, drop-coating, silk screen print method, spraying coating method and slit type
The material of light absorption active layer is formed on the hole transmission layer by any one mode in extrusion pressing type coating;And/or step
Suddenly (3) include:By embellishing cathode interface material of any of claims 1 or 2 in the light absorption active layer in a manner of spin coating
On;Preferably, the speed of the spin coating is 1000~5000 revs/min;Preferably, the concentration of the embellishing cathode interface material
For 2~10mg/ml;And/or step (4) includes:Top electrode is formed in the embellishing cathode interface layer with vacuum vapour deposition
On;Preferably, the vacuum degree that the vacuum vapour deposition uses is 1 × 10-4Pa~6 × 10-4Pa, temperature are 30~40 DEG C.
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CN111162175A (en) * | 2019-12-30 | 2020-05-15 | 电子科技大学 | Perovskite photoelectric detector based on hole transport layer interface optimization and preparation method |
CN111180586A (en) * | 2019-12-30 | 2020-05-19 | 电子科技大学 | Perovskite photoelectric detector based on active layer optimization and preparation method thereof |
CN112071990A (en) * | 2020-08-18 | 2020-12-11 | 山东师范大学 | Cathode interface modification layer and application thereof |
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