CN207977316U - A kind of top emitting photoelectric display device of inverted structure - Google Patents
A kind of top emitting photoelectric display device of inverted structure Download PDFInfo
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- CN207977316U CN207977316U CN201820121222.2U CN201820121222U CN207977316U CN 207977316 U CN207977316 U CN 207977316U CN 201820121222 U CN201820121222 U CN 201820121222U CN 207977316 U CN207977316 U CN 207977316U
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Abstract
The utility model belongs to photoelectric display technical field, the top emitting photoelectric display device of specially a kind of inverted structure, including substrate, it is characterised in that：It is provided with reflecting electrode on the substrate, novel cathode buffer layer is provided on reflecting electrode, the novel cathode buffer layer is three-layer composite structure, including the first cathode buffer layer, second cathode buffer layer and third cathode buffer layer, first cathode buffer layer is TiO2, first cathode buffer layer thickness is 30 nm, second cathode buffer layer is arranged on the first cathode buffer layer, second cathode buffer layer is Ag, the thickness of second cathode buffer layer is 0.3 nm, the third cathode buffer layer is arranged on the second cathode buffer layer, third cathode buffer layer is BCP, the thickness of third cathode buffer layer is 45 nm, it is provided with light-emitting layer on the novel cathode buffer layer, it is provided with anode buffer layer on the light-emitting layer, transparent anode layer is provided on anode buffer layer.
Description
Technical field
The utility model belongs to photoelectric display technical field, the top emitting Electro-Optical Display of specially a kind of inverted structure
Part.
Background technology
By development for many years, organic photoelectric display device obtains huge advance, but there are problems that.Mainly
Have:The organic photoelectric display device lifetime stability of traditional forward structure is poor, and the service life can be partly solved using inverted structure
Problem, but need to design good cathode buffer layer, to reduce the work function of electrode, promote the collection of electronics.On the other hand,
Light can be greatly reduced since bottom device also needs to configuration driven circuit using the display device of traditional bottom-emission structure
Emittance area influences the aperture opening ratio of display device, for inverted structure display device then without this problem.Because driving is set
Meter is in lighttight bottom, and beam projecting is then at the top of device.
It to be solved the problems, such as so providing a kind of top emitting photoelectric display device of inverted structure and becoming us.
Utility model content
The purpose of this utility model is to provide a kind of top emitting photoelectric display devices of inverted structure, to solve the above-mentioned back of the body
The problem of being proposed in scape technology.
To achieve the above object, the utility model provides the following technical solutions：
A kind of top emitting photoelectric display device of inverted structure, including substrate, it is characterised in that：It is provided on the substrate
Reflecting electrode, novel cathode buffer layer is provided on reflecting electrode, and the novel cathode buffer layer is three-layer composite structure, packet
The first cathode buffer layer, the second cathode buffer layer and third cathode buffer layer are included, the first cathode buffer layer is TiO2, the first cathode
Buffer layer thickness is 30 nm, and second cathode buffer layer is arranged on the first cathode buffer layer, the second cathode buffer layer
For Ag, the thickness of the second cathode buffer layer is 0.3 nm, third cathode buffer layer setting the second cathode buffer layer it
On, third cathode buffer layer is BCP, and the thickness of third cathode buffer layer is 45 nm, is arranged on the novel cathode buffer layer
There is light-emitting layer, anode buffer layer is provided on the light-emitting layer, transparent anode layer is provided on anode buffer layer, it is described
Transparent anode layer be four-layer structure, including stack gradually first anode layer, second plate layer, third anode layer and the 4th sun
Pole layer, the first anode layer are MoO3, and the thickness of first anode layer is 3 nm, and the second plate layer is set to first
On anode layer, the second plate layer is Ag, and second plate layer thickness is 12 nm, and the third anode layer is set to
On second plate layer, the third anode layer is WO3, and the thickness of third anode layer is 18 nm, the 4th anode
Layer is set on third anode layer, and the 4th anode layer is Al2O3, and the thickness of the 4th anode layer is 5 nm.
Preferably, the substrate is monocrystalline silicon.
Preferably, the reflecting electrode is Al or Ag, the thickness of reflecting electrode is 500 nm, reflecting electrode table
Face r.m.s. roughness is less than 2 nm.
Preferably, the light-emitting layer is Ir (btp)2(acac), the thickness of light-emitting layer is 0.3 nm.
Preferably, the anode buffer layer is CBP, the thickness of anode buffer layer is 28 nm.
Compared with prior art, the utility model has the beneficial effects that：The utility model use 30 nm TiO2,0.3
The BCP of the Ag of nm and 30 nm can reduce the work function of reflecting electrode as compound novel cathode buffer layer, TiO2, improve
The built in field of device, the Ag of 0.3 nm can improve the electric conductivity of cathode buffer layer, enhance the injection of electronics, the BCP of 30 nm
The effect that electronics can be transmitted, and prevent light-generated excitons from being quenched on Ag passes through the synthesis of compound novel cathode buffer layer
Effect, finally greatly improves the luminous efficiency of the top emitting photoelectric display device of inverted structure.The utility model is simultaneously using single
The Ir (btp) of the 0.3nm of layer2(acac) small thin layer reduces the use of expensive emitting layer material as luminescent layer, saves
Device manufacturing cost.The utility model using the transparent anode of four-layer structure, enhances optical coupling output efficiency simultaneously, increased
Al2O3 thin layers have good packaging effect, can improve the service life of device.
Description of the drawings
Fig. 1 is the utility model overall structure diagram；
Fig. 2 is cathode buffer layer structural schematic diagram in the utility model；
Fig. 3 is transparent anode schematic diagram of a layer structure in the utility model.
In figure：1- substrates, 2- reflecting electrodes, 3- novel cathode buffer layers, 4- light-emitting layers, 5- anode buffer layers, 6- are saturating
Bright anode layer, the first cathode buffer layers of 301-, the second cathode buffer layers of 302-, 303- third cathode buffer layers, 601- first
Anode layer, 602- second plate layers, 603- third anode layers, the 4th anode layers of 604-.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be understood that term "upper", "lower", "front", "rear", "left", "right",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
The utility model and simplifying describes for ease of description, do not indicate or imply the indicated device or element must have it is specific
Orientation, with specific azimuth configuration and operation, therefore should not be understood as limiting the present invention.
- 3 are please referred to Fig.1, the utility model provides a kind of technical solution：A kind of top emitting Electro-Optical Display of inverted structure
Part, including substrate 1 are provided with reflecting electrode 2 on substrate 1, novel cathode buffer layer 3, novel cathode are provided on reflecting electrode 2
Buffer layer 3 is three-layer composite structure, including the first cathode buffer layer 301, the second cathode buffer layer 302 and third cathode buffer layer
303, the first cathode buffer layer 301 is TiO2, and 301 thickness of the first cathode buffer layer is 30 nm, and the second cathode buffer layer 302 is set
It sets on the first cathode buffer layer 301, the second cathode buffer layer 302 is Ag, and the thickness of the second cathode buffer layer 302 is 0.3
Nm, third cathode buffer layer 303 are arranged on the second cathode buffer layer 302, and third cathode buffer layer 303 is BCP, and third is cloudy
The thickness of pole buffer layer 303 is 45 nm, is provided with light-emitting layer 4 on novel cathode buffer layer 3, sun is provided on light-emitting layer 4
Pole buffer layer 5 is provided with transparent anode layer 6 on anode buffer layer 5, and transparent anode layer 6 is four-layer structure, including stack gradually
First anode layer 601, second plate layer 602, third anode layer 603 and the 4th anode layer 604, first anode layer 601 are MoO3,
The thickness of first anode layer 601 is 3 nm, and second plate layer 602 is set on first anode layer 601, second plate layer 602
For Ag, 602 thickness of second plate layer is 12 nm, and third anode layer 603 is set on second plate layer 602, third anode layer
603 be WO3, and the thickness of third anode layer 603 is 18 nm, and the 4th anode layer 603 is set on third anode layer 602, the 4th
Anode layer 604 is Al2O3, and the thickness of the 4th anode layer 604 is 5 nm；Further, substrate 1 is monocrystalline silicon；Further, instead
Radio pole 2 is Al or Ag, and the thickness of reflecting electrode 2 is 500 nm, and 2 surface Root Mean Square roughness of reflecting electrode is less than 2 nm；
Further, light-emitting layer 4 is Ir (btp)2(acac), the thickness of light-emitting layer 4 is 0.3 nm；Further, the sun
Pole buffer layer 5 is CBP, and the thickness of anode buffer layer 5 is 28 nm.
Operation principle：When device works, forward bias is imposed, hole is injected from transparent anode layer to device inside, hole
Luminescent layer is reached by anode buffer layer, electronics is from reflecting electrode（Cathode）It injects to device inside, is arrived by cathode buffer layer
Up to luminescent layer, hole and electronics are compound in luminescent layer generation, are formed and are shone.Since the substrate in the utility model is opaque lining
Bottom, cathode are reflection-type opaque electrode, and top layer electrode anode is transparent electrode, and light outgoing sends out from top, realizes and be inverted knot
The top emitting device of structure.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is appreciated that can these embodiments be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of top emitting photoelectric display device of inverted structure, including substrate (1), it is characterised in that：It is set on the substrate (1)
It is equipped with reflecting electrode（2）, reflecting electrode（2）On be provided with novel cathode buffer layer（3）, the novel cathode buffer layer（3）
For three-layer composite structure, including the first cathode buffer layer（301）, the second cathode buffer layer（302）With third cathode buffer layer
（303）, the first cathode buffer layer（301）For TiO2, the first cathode buffer layer（301）Thickness is 30 nm, second cathode
Buffer layer（302）It is arranged in the first cathode buffer layer（301）On, the second cathode buffer layer（302）For Ag, the second cathode buffering
Layer（302）Thickness be 0.3 nm, the third cathode buffer layer（303）It is arranged in the second cathode buffer layer（302）On,
Third cathode buffer layer（303）For BCP, third cathode buffer layer（303）Thickness be 45 nm, the novel cathode buffering
Layer（3）On be provided with light-emitting layer（4）, the light-emitting layer（4）On be provided with anode buffer layer（5）, anode buffer layer（5）
On be provided with transparent anode layer（6）, the transparent anode layer（6）For four-layer structure, including the first anode layer that stacks gradually
（601）, second plate layer（602）, third anode layer（603）With the 4th anode layer（604）, the first anode layer（601）
For MoO3, first anode layer（601）Thickness be 3 nm, the second plate layer（602）It is set to first anode layer（601）
On, the second plate layer（602）For Ag, second plate layer（602）Thickness is 12 nm, the third anode layer
（603）It is set to second plate layer（602）On, the third anode layer（603）For WO3, third anode layer（603）Thickness
Degree is 18 nm, the 4th anode layer（603）It is set to third anode layer（603）On, the 4th anode layer
（604）For Al2O3, the 4th anode layer（604）Thickness be 5 nm.
2. a kind of top emitting photoelectric display device of inverted structure according to claim 1, it is characterised in that：The lining
Bottom (1) is monocrystalline silicon.
3. a kind of top emitting photoelectric display device of inverted structure according to claim 1, it is characterised in that：Described is anti-
Radio pole（2）For Al or Ag, reflecting electrode（2）Thickness be 500 nm, reflecting electrode（2）Surface Root Mean Square roughness is less than
2 nm。
4. a kind of top emitting photoelectric display device of inverted structure according to claim 1, it is characterised in that：The light
Emission layer（4）For Ir (btp)2(acac), light-emitting layer（4）Thickness be 0.3 nm.
5. a kind of top emitting photoelectric display device of inverted structure according to claim 1, it is characterised in that：The sun
Pole buffer layer（5）For CBP, anode buffer layer（5）Thickness be 28 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820121222.2U CN207977316U (en) | 2018-01-24 | 2018-01-24 | A kind of top emitting photoelectric display device of inverted structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820121222.2U CN207977316U (en) | 2018-01-24 | 2018-01-24 | A kind of top emitting photoelectric display device of inverted structure |
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| CN207977316U true CN207977316U (en) | 2018-10-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054116A (en) * | 2019-12-28 | 2021-06-29 | Tcl集团股份有限公司 | Light emitting diode |
-
2018
- 2018-01-24 CN CN201820121222.2U patent/CN207977316U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054116A (en) * | 2019-12-28 | 2021-06-29 | Tcl集团股份有限公司 | Light emitting diode |
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| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190912 Address after: Room 1003, No. 1 Building, Electronic Information Port, Hangbu Town, Shucheng County, Luan City, Anhui Province Patentee after: Electrine Photoelectric Technology (Anhui) Co., Ltd. Address before: 241000 16-08, C District, Feng Ming Hu District, Jiujiang District, Wuhu, Anhui. Patentee before: Jin Jia Jia |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210223 Address after: 201306 room a-8124, building 1, 1758 Luchaogang Road, Nanhui new town, Pudong New Area, Shanghai Patentee after: Shanghai Hongjun Electronic Technology Co.,Ltd. Address before: 237000 room 1003, building 1, electronic information port, Hangbu Town, Shucheng County, Lu'an City, Anhui Province Patentee before: Electrine Photoelectric Technology (Anhui) Co.,Ltd. |