CN105789240A - OLED display device with information security function and manufacturing method of OLED display device - Google Patents

OLED display device with information security function and manufacturing method of OLED display device Download PDF

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Publication number
CN105789240A
CN105789240A CN201410797595.8A CN201410797595A CN105789240A CN 105789240 A CN105789240 A CN 105789240A CN 201410797595 A CN201410797595 A CN 201410797595A CN 105789240 A CN105789240 A CN 105789240A
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China
Prior art keywords
layer
display device
oled display
thickness
printing
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CN201410797595.8A
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Chinese (zh)
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不公告发明人
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Sichuan CCO Display Technology Co Ltd
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Sichuan CCO Display Technology Co Ltd
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Priority to CN201410797595.8A priority Critical patent/CN105789240A/en
Publication of CN105789240A publication Critical patent/CN105789240A/en
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Abstract

The invention discloses an OLED display device with an information security function and a manufacturing method of the OLED display device. The OLED display device sequentially comprises a glass substrate (1), a high-transmittance anode (2), a hole injection layer (3), a hole transport layer (4), a light-emitting layer (5), an electron transport layer (6), an electron injection layer (7), a low-transmittance cathode (8) and an OLED encapsulating cover plate (9) from bottom to top. According to the OLED display device, with an ITO or IZO thin film as the anode and metals of aluminum or silver and the like as the cathode, the transmittance of the anode is over 10% greater than that of the cathode; when the OLED display device is lightened, the content of the cathode side cannot be observed from the anode, but the content of the anode side can be observed from the cathode side; and the OLED display device also has the information security function when meeting the display function, and can be widely applied to a home decoration window and an automobile glass window.

Description

There is OLED display device of information privacy function and preparation method thereof
Technical field
The present invention relates to a kind of OLED display device, particularly to a kind of OLED display device with information privacy function and preparation method thereof.
Background technology
Organic Light Emitting Diode is also called Organic Electricity laser display (OrganicLight-EmittingDiode, OLED), Chinese descendant in America teach Deng Qingyun and find in the lab, thus expands the research to OLED.OLED Display Technique has self luminous characteristic, adopts very thin coating of organic material and glass substrate, and when there being electric current to pass through, these organic materials will be luminous, and OLED display screen visible angle is big, and can save electric energy.
OLED Display Technique has self luminous characteristic, adopt very thin coating of organic material and glass substrate, when there being electric current to pass through, these organic materials will be luminous, and OLED display screen visible angle is big, and electric energy can be saved, started this display device from 2003 and obtain application on the mp 3 player.
The basic structure of OLED is by the indium tin oxide (ITO) of a thin, transparent tool characteristic of semiconductor, is connected with the positive pole of electric power, adds another metallic cathode, is bundled into the structure such as sandwich.Total layer includes: hole transmission layer (HTL), luminescent layer (EL) and electron transfer layer (ETL).When supplying power to appropriate voltage, positive pole hole and negative electrode electric charge will combine in luminescent layer, produce light, produce red, green and blue RGB three primary colors according to its formula difference, constitute basic color.The characteristic of OLED is that oneself is luminous, needs backlight unlike TFTLCD, and therefore visibility and brightness are all high, next to that voltage requirements is low and power saving efficiency is high, add that reaction is fast, lightweight, thickness is thin, simple structure, cost is low, is considered one of product of 21 century most future.
The principle of luminosity of organic light emitting diode is similar with inorganic light-emitting diode.When element is subject to unidirectional current (DirectCurrent;During the forward bias voltage drop DC) derived, outer voltage energy in addition will drive electronics (Electron) and hole (Hole) respectively by negative electrode and anode injection element, when both meet in conduction, combine, namely form so-called electron-hole compound (Electron-HoleCapture).And when chemical molecular is subject to after extraneous energy excites, if electron spin (ElectronSpin) and ground state electron are paired, be then singlet state (Singlet), its light discharged is so-called fluorescence (Fluorescence);Otherwise, if excited state electronics is not paired and parallel with ground state electron spin, then it being called triplet (Triplet), its light discharged is so-called phosphorescence (Phosphorescence).
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, a kind of content observed from anode and cannot observe negative electrode is provided, but the content of anode can be observed from negative electrode, there is information privacy function, can be widely applied to OLED display device with information privacy function of home decoration window and vehicle glass form and preparation method thereof.
It is an object of the invention to be achieved through the following technical solutions: there is the OLED display device of information privacy function, include glass substrate, high permeability anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and low transmission negative electrode and OLED encapsulation cover plate from top to bottom successively.
The OLED display device manufacture method with information privacy function of the present invention comprises the following steps:
S1: utilize sputtering film coating method, sputtering a layer thickness is on the glass substrateITO or IZO thin film;
S2: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole injection layer on step S1 ITO or the IZO thin film made;
S3: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole transmission layer on hole injection layer;
S4: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as luminescent layer on hole transmission layer;
S5: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as electron transfer layer on luminescent layer;
S6: by vacuum thermal evaporation or mode of printing, makes one layer of organic material or inorganic material on the electron transport layer as electron injecting layer;
S7: by electron beam evaporation plating, vacuum thermal evaporation or mode of printing, makes one layer of aluminum or silver as semitransparent cathode on electron injecting layer.
Further, the thickness of described hole injection layer isThe thickness of hole transmission layer isThe thickness of luminescent layer isThe thickness of electron transfer layer isThe thickness of electron injecting layer is The thickness of semi-transparent obviously negative electrode is
nullThe invention has the beneficial effects as follows: adopt ITO or IZO thin film as anode,The transmitance of anode can be improved,Transmitance is made to reach more than 30%,Adopt the metal such as aluminum or silver as negative electrode,Reduce the transmitance of negative electrode,This structural design makes the transmitance transmitance more than 10% more than negative electrode of anode,To control the unilateral hyperlucent/unilateral opaque characteristic of OLED,When OLED display screen is not lighted,Device is originally as transparent,When OLED is lighted,Although light passes through from anode and negative electrode respectively,But owing to the light therethrough intensity of anode is higher than negative electrode,Reflection light by negative electrode affects,From anode observe time,The content of negative electrode cannot be observed,But the content of anode can be observed from negative electrode,While satisfied display function,Also there is information privacy function,Can be widely applied to home decoration window and vehicle glass form.
Accompanying drawing explanation
Fig. 1 is the OLED structural representation of the present invention;
Description of reference numerals: 1-glass substrate, 2-high permeability anode, 3-hole injection layer, 4-hole transmission layer, 5-luminescent layer, 6-electron transfer layer, 7-electron injecting layer, 8-low transmission negative electrode, 9-OLED encapsulation cover plate.
Detailed description of the invention
Technical scheme is further illustrated below in conjunction with the drawings and specific embodiments.
As shown in Figure 1, there is the OLED display device of information privacy function, include glass substrate 1, high permeability anode 2, hole injection layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6, electron injecting layer 7 and low transmission negative electrode 8 and OLED encapsulation cover plate 9 from top to bottom successively.
Embodiment 1
The OLED display device manufacture method with information privacy function of the present embodiment comprises the following steps:
S1: utilize sputtering film coating method, sputtering a layer thickness is on the glass substrateITO or IZO thin film;
S2: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole injection layer on step S1 ITO or the IZO thin film made, and the thickness of hole injection layer is
S3: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole transmission layer on hole injection layer, and the thickness of hole transmission layer is
S4: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as luminescent layer on hole transmission layer, and the thickness of luminescent layer is
S5: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as electron transfer layer on luminescent layer, and the thickness of electron transfer layer is
S6: by vacuum thermal evaporation or mode of printing, makes one layer of organic material or inorganic material on the electron transport layer as electron injecting layer, and the thickness of electron injecting layer is
S7: by electron beam evaporation plating, vacuum thermal evaporation or mode of printing, makes one layer of aluminum or silver as semitransparent cathode on electron injecting layer, and the thickness of semi-transparent obviously negative electrode is 20.
Embodiment 2
The OLED display device manufacture method with information privacy function of the present embodiment comprises the following steps:
S1: utilize sputtering film coating method, sputtering a layer thickness is on the glass substrateITO or IZO thin film;
S2: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole injection layer on step S1 ITO or the IZO thin film made, and the thickness of hole injection layer is
S3: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole transmission layer on hole injection layer, and the thickness of hole transmission layer is
S4: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as luminescent layer on hole transmission layer, and the thickness of luminescent layer is
S5: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as electron transfer layer on luminescent layer, and the thickness of electron transfer layer is
S6: by vacuum thermal evaporation or mode of printing, makes one layer of organic material or inorganic material on the electron transport layer as electron injecting layer, and the thickness of electron injecting layer is
S7: by electron beam evaporation plating, vacuum thermal evaporation or mode of printing, makes one layer of aluminum or silver as semitransparent cathode on electron injecting layer, and the thickness of semi-transparent obviously negative electrode is
Embodiment 3
The OLED display device manufacture method with information privacy function of the present embodiment comprises the following steps:
S1: utilize sputtering film coating method, sputtering a layer thickness is on the glass substrateITO or IZO thin film;
S2: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole injection layer on step S1 ITO or the IZO thin film made, and the thickness of hole injection layer is
S3: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole transmission layer on hole injection layer, and the thickness of hole transmission layer is
S4: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as luminescent layer on hole transmission layer, and the thickness of luminescent layer is
S5: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as electron transfer layer on luminescent layer, and the thickness of electron transfer layer is
S6: by vacuum thermal evaporation or mode of printing, makes one layer of organic material or inorganic material on the electron transport layer as electron injecting layer, and the thickness of electron injecting layer is
S7: by electron beam evaporation plating, vacuum thermal evaporation or mode of printing, makes one layer of aluminum or silver as semitransparent cathode on electron injecting layer, and the thickness of semi-transparent obviously negative electrode is
Embodiment 4
The OLED display device manufacture method with information privacy function of the present embodiment comprises the following steps:
S1: utilize sputtering film coating method, sputtering a layer thickness is on the glass substrateITO or IZO thin film;
S2: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole injection layer on step S1 ITO or the IZO thin film made, and the thickness of hole injection layer is
S3: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole transmission layer on hole injection layer, and the thickness of hole transmission layer is
S4: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as luminescent layer on hole transmission layer, and the thickness of luminescent layer is
S5: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as electron transfer layer on luminescent layer, and the thickness of electron transfer layer is
S6: by vacuum thermal evaporation or mode of printing, makes one layer of organic material or inorganic material on the electron transport layer as electron injecting layer, and the thickness of electron injecting layer is
S7: by electron beam evaporation plating, vacuum thermal evaporation or mode of printing, makes one layer of aluminum or silver as semitransparent cathode on electron injecting layer, and the thickness of semi-transparent obviously negative electrode is
Embodiment 5
The OLED display device manufacture method with information privacy function of the present embodiment comprises the following steps:
S1: utilize sputtering film coating method, sputtering a layer thickness is on the glass substrateITO or IZO thin film;
S2: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole injection layer on step S1 ITO or the IZO thin film made, and the thickness of hole injection layer is
S3: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole transmission layer on hole injection layer, and the thickness of hole transmission layer is
S4: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as luminescent layer on hole transmission layer, and the thickness of luminescent layer is
S5: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as electron transfer layer on luminescent layer, and the thickness of electron transfer layer is
S6: by vacuum thermal evaporation or mode of printing, makes one layer of organic material or inorganic material on the electron transport layer as electron injecting layer, and the thickness of electron injecting layer is
S7: by electron beam evaporation plating, vacuum thermal evaporation or mode of printing, makes one layer of aluminum or silver as semitransparent cathode on electron injecting layer, and the thickness of semi-transparent obviously negative electrode is
The present invention adopts ITO or IZO thin film as anode, the transmitance of anode can be improved, transmitance is made to reach more than 30%, adopt the metal such as aluminum or silver as negative electrode, reduce the transmitance of negative electrode, this structural design makes the transmitance transmitance more than 10% more than negative electrode of anode, control the unilateral hyperlucent/unilateral opaque characteristic of OLED, when OLED display screen is not lighted, device is originally as transparent, when OLED is lighted, although light passes through from anode and negative electrode respectively, but owing to the light therethrough intensity of anode is higher than negative electrode, reflection light by negative electrode affects, from anode observe time, the content of cathode side cannot be observed, but the content of anode-side can be observed from cathode side.
Those of ordinary skill in the art is it will be appreciated that embodiment described here is to aid in reader understanding's principles of the invention, it should be understood that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete deformation and combination without departing from essence of the present invention according to these technology disclosed by the invention enlightenment, and these deformation and combination remain in protection scope of the present invention.

Claims (8)

1. there is the OLED display device of information privacy function, it is characterized in that, include glass substrate (1), high permeability anode (2), hole injection layer (3), hole transmission layer (4), luminescent layer (5), electron transfer layer (6), electron injecting layer (7) and low transmission negative electrode (8) and OLED encapsulation cover plate (9) from top to bottom successively.
2. an OLED display device manufacture method with information privacy function, it is characterised in that comprise the following steps:
S1: utilize sputtering film coating method, sputtering a layer thickness is on the glass substrateITO or IZO thin film;
S2: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole injection layer on step S1 ITO or the IZO thin film made;
S3: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as hole transmission layer on hole injection layer;
S4: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as luminescent layer on hole transmission layer;
S5: by vacuum thermal evaporation or mode of printing, makes one layer of organic material as electron transfer layer on luminescent layer;
S6: by vacuum thermal evaporation or mode of printing, makes one layer of organic material or inorganic material on the electron transport layer as electron injecting layer;
S7: by electron beam evaporation plating, vacuum thermal evaporation or mode of printing, makes one layer of aluminum or silver as semitransparent cathode on electron injecting layer.
3. OLED display device manufacture method according to claim 2, it is characterised in that the thickness of described hole injection layer is
4. OLED display device manufacture method according to claim 2, it is characterised in that the thickness of hole transmission layer is
5. OLED display device manufacture method according to claim 2, it is characterised in that the thickness of described luminescent layer is
6. OLED display device manufacture method according to claim 2, it is characterised in that the thickness of described electron transfer layer is
7. OLED display device manufacture method according to claim 2, it is characterised in that the thickness of described electron injecting layer is
8. OLED display device manufacture method according to claim 2, it is characterised in that the thickness of described semi-transparent obviously negative electrode is
CN201410797595.8A 2014-12-18 2014-12-18 OLED display device with information security function and manufacturing method of OLED display device Pending CN105789240A (en)

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Application Number Priority Date Filing Date Title
CN201410797595.8A CN105789240A (en) 2014-12-18 2014-12-18 OLED display device with information security function and manufacturing method of OLED display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410797595.8A CN105789240A (en) 2014-12-18 2014-12-18 OLED display device with information security function and manufacturing method of OLED display device

Publications (1)

Publication Number Publication Date
CN105789240A true CN105789240A (en) 2016-07-20

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106129094A (en) * 2016-07-29 2016-11-16 京东方科技集团股份有限公司 A kind of display floater, its driving method and anti-peeping system
US10177333B2 (en) 2016-12-14 2019-01-08 Shanghai Tianma AM-OLED Co., Ltd. Organic light-emitting display panel and device
CN112750969A (en) * 2021-01-25 2021-05-04 歌尔科技有限公司 Display method, display assembly and electronic equipment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106129094A (en) * 2016-07-29 2016-11-16 京东方科技集团股份有限公司 A kind of display floater, its driving method and anti-peeping system
CN106129094B (en) * 2016-07-29 2019-01-25 京东方科技集团股份有限公司 A kind of display panel, its driving method and anti-peeping system
US10177333B2 (en) 2016-12-14 2019-01-08 Shanghai Tianma AM-OLED Co., Ltd. Organic light-emitting display panel and device
CN112750969A (en) * 2021-01-25 2021-05-04 歌尔科技有限公司 Display method, display assembly and electronic equipment
CN112750969B (en) * 2021-01-25 2023-12-26 歌尔科技有限公司 Display method, display assembly and electronic equipment

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Application publication date: 20160720