CN106981504B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN106981504B CN106981504B CN201710392039.6A CN201710392039A CN106981504B CN 106981504 B CN106981504 B CN 106981504B CN 201710392039 A CN201710392039 A CN 201710392039A CN 106981504 B CN106981504 B CN 106981504B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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Abstract
The invention discloses a display panel and a display device, the display panel includes: a reflective electrode layer; the micro-cavity structure layer is formed on one side, far away from the substrate, of the first electrode layer and comprises a first micro-cavity structure, a second micro-cavity structure and a third micro-cavity structure; the first microcavity structure is used for transmitting red light, the second microcavity structure is used for transmitting green light, and the third microcavity structure is used for transmitting blue light; the semitransparent electrode layer is formed on one side of the microcavity structure layer, which is far away from the substrate; wherein, the microcavity structure layer includes white light-emitting layer, including red luminous peak, green luminous peak and blue luminous peak, and luminous peak position satisfies: the difference between the red light emission peak and the green light emission peak is greater than or equal to the sum of the half-peak width of the red light emission peak and the half-peak width of the green light emission peak, and the difference between the green light emission peak and the blue light emission peak is greater than or equal to the sum of the half-peak width of the green light emission peak and the half-peak width of the blue light emission peak. The invention reduces the process cost and the power consumption of the display device and improves the brightness of the display device.
Description
Technical Field
The embodiment of the invention belongs to the technical field of display, and relates to a display panel and a display device.
Background
The technology for realizing colorization of Organic Light-Emitting diodes (OLEDs) includes two main technologies, namely, a microcavity effect RGB pixel independent Light-Emitting technology and a technology of matching white Light-Emitting materials with color filter layers.
The independent light emission of the microcavity effect RGB pixels requires the utilization of a precise metal shadow mask and a pixel alignment technology to prepare red, green and blue three-primary-color light emission centers of the microcavity effect to realize colorization, and the precise metal shadow mask needs to be used.
The method for combining the white luminescent material and the color filter layer is characterized in that a white light-emitting OLED device is prepared firstly, then three primary colors are obtained through the color filter layer, and then the three primary colors are combined to realize color display, a precise metal shadow mask contraposition technology is not needed in the preparation process, the mature color filter layer preparation technology of the liquid crystal display can be adopted, the large-scale panel is easy to realize, and the high pixel density is easy to realize, so that the method is a potential full-color technology in the future OLED display preparation technology. At present, transparent conductive electrodes with different thicknesses can be prepared on a red sub-pixel, a green sub-pixel and a blue sub-pixel by adopting a yellow region process on a reflective electrode to realize the adjustment of the RGB optical cavity length, and further realize the enhancement of the RGB light intensity. However, after the spectrum with a certain wavelength is enhanced, other nearby spectrums weakened by the optical cavity length appear, so that a color filter layer is needed to filter the miscellaneous peaks in the colorization process, and about 50% of light passing through the color filter layer is absorbed, so that the brightness of the emitted light is reduced, and the power consumption of the display screen is improved; on the other hand, if the color filter layer is processed on the OLED, the color filter layer must be implemented by a process at a temperature of less than 90 ℃, which increases the difficulty of the process. If the color filter layer is manufactured on an external substrate, precise alignment and bonding with the display substrate are required subsequently, and the process procedure and the cost are increased.
Disclosure of Invention
In view of the above, the present invention provides a display panel and a display device, so as to reduce the process steps, the cost, and the power consumption of the display device, and improve the brightness of the display device.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one aspect, an embodiment of the present invention provides a display panel, which includes a plurality of pixel regions, each of the pixel regions at least includes a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region, and the display panel further includes:
a substrate;
a reflective electrode layer formed on the substrate;
the microcavity structure layer is formed on one side, far away from the substrate, of the first electrode layer and comprises a first microcavity structure located in the first sub-pixel area, a second microcavity structure located in the second sub-pixel area and a third microcavity structure located in the third sub-pixel area; in a direction perpendicular to the display panel, the first microcavity structure, the second microcavity structure and the third microcavity structure have different cavity lengths, the first microcavity structure is used for transmitting red light, the second microcavity structure is used for transmitting green light, and the third microcavity structure is used for transmitting blue light;
a pixel defining layer formed between adjacent sub-pixel regions;
the semitransparent electrode layer is formed on one side, far away from the substrate, of the microcavity structure layer;
the packaging layer is formed on one side, far away from the substrate, of the semi-transparent electrode layer;
the microcavity structure layer comprises a white light emitting layer for synthesizing and emitting white light, and the microcavity structure layer comprises a red light emitting peak, a green light emitting peak and a blue light emitting peak, wherein the positions of the light emitting peaks meet the following conditions: the difference between the red light emission peak and the green light emission peak is greater than or equal to the sum of the half-peak width of the red light emission peak and the half-peak width of the green light emission peak, and the difference between the green light emission peak and the blue light emission peak is greater than or equal to the sum of the half-peak width of the green light emission peak and the half-peak width of the blue light emission peak.
In another aspect, an embodiment of the present invention provides a display device, including the display panel according to the above aspect.
The invention has the beneficial effects that: the invention provides a display panel and a display device.A white light emitting layer for synthesizing and emitting white light is arranged in a microcavity structure layer, the white light comprises a red light emitting peak, a green light emitting peak and a blue light emitting peak, and the positions of the light emitting peaks meet the following requirements: the difference between the red light-emitting peak and the green light-emitting peak is larger than or equal to the sum of the half-peak width of the red light-emitting peak and the half-peak width of the green light-emitting peak, the difference between the green light-emitting peak and the blue light-emitting peak is larger than or equal to the sum of the half-peak width of the green light-emitting peak and the half-peak width of the blue light-emitting peak, the white light-emitting layer at least comprises a quantum dot light-emitting material, when the quantum dot material realizes light-emitting, the light-emitting spectrum is narrow, the color purity is high, after the white light is synthesized by adopting purer colored quantum dot materials, the cavity length is adjusted by reflection of a reflection electrode layer and a microcavity structure layer. Therefore, the structure of the embodiment does not need a color filter layer, thereby not only reducing the process and cost, but also improving the brightness of the display device and reducing the power consumption of the display device.
Drawings
The above and other features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the attached drawings, in which:
FIG. 1 is a schematic structural diagram of a conventional display panel;
fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another display panel provided in the embodiment of the present invention;
fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a conventional display panel. As shown in fig. 1, a conventional display panel may include a plurality of pixel regions, each of which includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region; the display panel further comprises a substrate 1; the reflecting electrode is positioned on one side of the substrate 1 and comprises a red light reflecting electrode 2 positioned in a red sub-pixel area, a green light reflecting electrode 3 positioned in a green sub-pixel area and a blue light reflecting electrode 4 positioned in a blue sub-pixel area; the transparent electrode is positioned on one side of the reflecting electrode, which is far away from the substrate 1, and comprises a red light transparent electrode 5 positioned on the red light reflecting electrode 2, a green light transparent electrode 6 positioned on the green light reflecting electrode 3 and a blue light transparent electrode 7 positioned on the blue light reflecting electrode 4; an organic light-emitting layer 8 positioned on one side of the transparent electrode far away from the substrate 1; a semitransparent electrode 9 positioned on one side of the organic light-emitting layer 8 far away from the substrate 1; an encapsulation layer 10 covering the translucent electrode 9; and the color filter layer is positioned on one side of the packaging layer 10 far away from the substrate 1 and comprises a red filter R positioned in the red sub-pixel area, a green filter G positioned in the green sub-pixel area and a blue filter B positioned in the blue sub-pixel area.
As can be seen from fig. 1, transparent electrodes are formed on the red light reflective electrode 2, the green light reflective electrode 3 and the blue light reflective electrode 4, and the transparent electrodes have different thicknesses, so that the cavity length h1 of the first microcavity structure on the red light reflective electrode 2, the cavity length h2 of the second microcavity structure on the green light reflective electrode 3 and the cavity length h3 of the third microcavity structure on the blue light reflective electrode 4 are different, so that the RGB light intensity can be enhanced, but after the spectrum of a certain wavelength is enhanced, other spectrums attenuated by the optical cavity length appear nearby, so that a color filter layer is required to filter out these peaks in the colorization process, and at the same time, about 50% of light passing through the color filter layer is absorbed, so that the luminance is reduced, and the power consumption of the display screen is improved; on the other hand, if the color filter layer is processed on the OLED, the color filter layer must be implemented by a process at a temperature of less than 90 ℃, which increases the difficulty of the process. If the color filter layer is manufactured on an external substrate, precise alignment and bonding with the display substrate are required subsequently, and the process procedure and the cost are increased.
In view of the foregoing problems, embodiments of the present invention provide a display panel and a display device.
The display panel provided by the embodiment of the invention comprises a plurality of pixel areas, each pixel area at least comprises a first sub-pixel area, a second sub-pixel area and a third sub-pixel area, and the display panel further comprises:
a substrate;
a reflective electrode layer formed on the substrate;
the microcavity structure layer is formed on one side, far away from the substrate, of the first electrode layer and comprises a first microcavity structure positioned in the first sub-pixel area, a second microcavity structure positioned in the second sub-pixel area and a third microcavity structure positioned in the third sub-pixel area; in the direction perpendicular to the display panel, the cavity lengths of the first microcavity structure, the second microcavity structure and the third microcavity structure are different, the first microcavity structure is used for transmitting red light, the second microcavity structure is used for transmitting green light, and the third microcavity structure is used for transmitting blue light;
a pixel defining layer formed between adjacent sub-pixel regions;
the semitransparent electrode layer is formed on one side of the microcavity structure layer, which is far away from the substrate;
the packaging layer is formed on one side, far away from the substrate, of the semitransparent electrode layer;
the microcavity structure layer comprises a white light emitting layer for synthesizing and emitting white light, and comprises a red light emitting peak, a green light emitting peak and a blue light emitting peak, wherein the positions of the light emitting peaks meet the following conditions: the difference between the red light-emitting peak and the green light-emitting peak is larger than or equal to the sum of the half-peak width of the red light-emitting peak and the half-peak width of the green light-emitting peak, the difference between the green light-emitting peak and the blue light-emitting peak is larger than or equal to the sum of the half-peak width of the green light-emitting peak and the half-peak width of the blue light-emitting peak, and the white light-emitting layer at least comprises a quantum.
It should be noted that, in order to realize individual control of each pixel region, it is obvious that the reflective electrode layer includes a plurality of reflective electrodes disposed separately corresponding to the pixel regions, and/or the semi-transparent electrode layer includes a plurality of semi-transparent electrodes disposed separately corresponding to the pixel regions.
In the embodiment of the invention, when the quantum dot material realizes light emission, the light-emitting spectrum is narrow, the color purity is high, and after the white light is synthesized by adopting the purer colored quantum dot material, the white light is reflected by the reflecting electrode layer and the cavity length is adjusted by the microcavity structure layer, so that corresponding stray peaks can not appear, and the irrelevant stray peaks can not be filtered by a colored filter layer.
Based on the scheme, the white light emitting layer (the thickness, the material composition and the like of a film layer in the white light emitting layer) meeting the condition of the position of the light emitting peak can be simulated through a simulation experiment, and then the white light emitting layer is further verified through a spectrum analyzer. Therefore, the white light emitting layer required by the embodiment of the invention can be obtained.
For example, fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention. As shown in fig. 2, the display panel may include:
a substrate 11;
a reflective electrode layer 12 formed on the substrate 11;
the microcavity structure layer is formed on one side, far away from the substrate 11, of the first electrode layer and comprises a first microcavity structure located in the first sub-pixel region X, a second microcavity structure located in the second sub-pixel region Y and a third microcavity structure located in the third sub-pixel region Z; in the direction perpendicular to the display panel, the cavity lengths of the first microcavity structure, the second microcavity structure and the third microcavity structure are different, the first microcavity structure is used for transmitting red light, the second microcavity structure is used for transmitting green light, and the third microcavity structure is used for transmitting blue light;
a pixel defining layer 16 formed between adjacent sub-pixel regions;
a semitransparent electrode layer 18 formed on the side of the microcavity structure layer away from the substrate 11;
an encapsulation layer 19 formed on a side of the translucent electrode layer 18 away from the substrate 11;
the microcavity structure layer comprises the white light emitting layer 17, the first microcavity structure comprises a first transparent electrode layer 13 and a white light emitting layer 17 which are stacked, the second microcavity structure comprises a second transparent electrode layer 14 and a white light emitting layer 17 which are stacked, the third microcavity structure comprises a third transparent electrode layer 15 and a white light emitting layer 17 which are stacked, and the thicknesses of the first transparent electrode layer 13, the second transparent electrode layer 14 and the third transparent electrode layer 15 are different.
Optionally, the substrate 11 may be a rigid substrate or a flexible substrate, wherein the rigid substrate may be made of glass, the flexible substrate may be made of polyimide, and the thickness of the substrate may be set according to process requirements, product requirements, and the like.
The materials of the first transparent electrode layer 13, the second transparent electrode layer 14 and the third transparent electrode layer 15 may be the same material, or may be different materials, and optionally, the materials of the first transparent electrode layer 13, the second transparent electrode layer 14 and the third transparent electrode layer 15 may be one of IZO and ITO.
Alternatively, the pixel defining layer 16 may be an organic material, and the pixel defining layer may define an opening area (light emitting area) of each sub-pixel area.
Alternatively, the encapsulation layer 19 may be a thin film encapsulation layer.
In the embodiment, the transparent electrode layers with different thicknesses are formed in the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, so that the optical cavity lengths corresponding to the sub-pixels in the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are different, the microcavity effect generated under the same cavity length is avoided, and the red light, the green light and the blue light can be enhanced simultaneously; and through setting up the white light luminescent layer including quantum dot luminescent material, eliminated the stray peak, need not the colored filter layer and come to filter out irrelevant stray peak, reduced technology process and cost, improved display device's luminance, reduced display device's consumption.
Optionally, the first transparent electrode layer, the second transparent electrode layer and/or the third transparent electrode layer include at least one transparent electrode layer. For example, fig. 3 is a schematic structural diagram of another display panel provided in an embodiment of the present invention. Unlike the display panel shown in fig. 2, the first transparent electrode layer of the present embodiment includes two transparent electrode layers, i.e., a first sub transparent electrode layer 131 and a second sub transparent electrode layer 132, as shown in fig. 3. The first sub transparent electrode layer 131 and the second sub transparent electrode layer 132 may be made of the same material, or made of different materials, for example, the materials of the first sub transparent electrode layer 131 and the second sub transparent electrode layer 132 are both ITO, or the material of the first sub transparent electrode layer 131 is ITO, and the material of the second sub transparent electrode layer 132 is IZO.
It should be noted that fig. 3 is only an exemplary illustration, and the second transparent electrode layer 14 and the third transparent electrode layer 15 may also include multiple transparent electrode layers as long as only light of corresponding colors can be transmitted, which is not limited by the present invention.
Optionally, the thickness of the third transparent electrode layer is 0, that is, the third sub-pixel region does not have the third transparent electrode layer. For example, fig. 4 is a schematic structural diagram of another display panel provided in the embodiment of the present invention. Unlike the above-described embodiment, as shown in fig. 4, the thickness of the third transparent electrode layer in this embodiment is 0.
Therefore, in the embodiment, the transparent electrode layers with different thicknesses are formed only in the first sub-pixel area and the second sub-pixel area through photoetching, so that the optical cavity lengths corresponding to the sub-pixels in the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are different, the microcavity effect generated under the same cavity length is avoided, the red light, the green light and the blue light can be simultaneously enhanced, moreover, the transparent electrode layer is not required to be formed in the third sub-pixel area through photoetching, the photoetching process is reduced, the preparation process of the display panel is simplified, and the process difficulty and the cost are reduced.
Optionally, in each of the above embodiments, the cavity lengths of the first micro-cavity structure, the second micro-cavity structure, and the third micro-cavity structure and the wavelength of the corresponding transmitted light satisfy a fabry-perot resonance equation, so that the transmittance of the corresponding light in each sub-pixel region can be further improved, and the transmission of other light is suppressed.
Based on the above embodiments, the white light emitting layer of the embodiments of the present invention includes at least one quantum dot light emitting layer, or the white light emitting layer includes at least one quantum dot light emitting layer and at least one organic light emitting layer that are stacked.
The white light emitting layer of the embodiment of the invention can comprise a quantum dot light emitting layer. Illustratively, the white light emitting layer includes a quantum dot blend layer, wherein the quantum dot blend layer includes a red quantum dot emitting material, a green quantum dot emitting material, and a blue quantum dot emitting material.
Considering that blue light energy may be transferred to red light and green light of low energy, in order to make the emitted light white, the ratio of the red quantum dot luminescent material and the green quantum dot luminescent material may not be too high, which may result in failure to generate blue light, and the ratio of the red quantum dot luminescent material and the green quantum dot luminescent material may not be too low, which may result in failure to generate sufficient red light and green light. Optionally, in the red quantum dot luminescent material, the green quantum dot luminescent material and the blue quantum dot luminescent material, the proportion of the red quantum dot luminescent material is 0.1-10%, and the proportion of the green quantum dot luminescent material is 1-30%. In addition, considering that the quantum dot blending layer is too thin, the transported positive and negative charge carriers are easy to be incompletely captured during luminescence, so that the efficiency is low, and the quantum dot blending layer is too thick, so that the working voltage of the device is very high due to poor transport capacity; optionally, the thickness of the quantum dot blending layer is 10-100 nm. The quantum dot blending layer can be realized in a solution processing mode, namely, a spin coating mode, a spray coating mode, a slit extrusion coating mode or an ink-jet printing mode.
In addition, the white light emitting layer may further include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, that is, the white light emitting layer includes a hole injection layer, a hole transport layer, a quantum dot blend layer, an electron transport layer, and an electron injection layer, which are sequentially stacked.
The white light emitting layer of the embodiment of the invention may include at least one quantum dot light emitting layer and at least one organic light emitting layer which are stacked. Illustratively, the white light emitting layer includes a second color quantum dot light emitting layer including a second color quantum dot light emitting material, a first auxiliary layer, and a mixed light emitting layer including a first color light emitting material and a third color light emitting material.
Optionally, the first auxiliary layer is a first organic spacer layer, and the first organic spacer layer includes a hole organic material, an electron organic material, or a dual injection organic material. Therefore, a traditional non-series light-emitting structure can be formed, wherein the thickness of the first organic spacing layer is 1-20 nm, optionally, the thickness of the first organic spacing layer is 3-5 nm, the transmission characteristics of positive and negative charges are further improved, and the capture probability of positive and negative charges is improved.
Optionally, the mixed light emitting layer includes a single organic light emitting layer, wherein the single organic light emitting layer includes a mixed first color organic light emitting material and a mixed third color organic light emitting material; at this time, the white light emitting layer may further include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, wherein the hole injection layer, the hole transport layer, and the second color quantum dot light emitting layer may be implemented in a solution processing manner, and the first organic spacer layer, the mixed light emitting layer, the electron transport layer, and the electron injection layer may be implemented by a vacuum evaporation process.
Or the mixed light-emitting layer comprises a first color organic light-emitting layer and a third color organic light-emitting layer which are laminated, wherein the first color organic light-emitting layer comprises a first color organic light-emitting material, and the third color organic light-emitting layer comprises a third color organic light-emitting material; a second auxiliary layer is arranged between the first color organic light-emitting layer and the third color organic light-emitting layer. Wherein, the second auxiliary layer is a second organic spacing layer corresponding to the first organic spacing layer.
In addition, the first auxiliary layer may be a first carrier generation layer. At this time, the second color quantum dot light emitting layer and the mixed light emitting layer may respectively serve as separate light emitting functional layers, and may respectively include a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. The second color quantum dot light-emitting layer and the mixed light-emitting layer are connected through the first carrier generation layer to form a series light-emitting structure, so that currents with the same size can successively flow through a plurality of different light-emitting function layers to emit light together, the light-emitting brightness and the light-emitting efficiency are improved, compared with a single light-emitting structure, the series light-emitting structure can improve the current efficiency and the light-emitting brightness in multiples, and the service life of the series light-emitting structure is greatly prolonged under the condition of the same current density.
Optionally, the mixed light emitting layer may include a single-layer quantum dot light emitting layer, where the single-layer quantum dot light emitting layer includes the mixed first color quantum dot light emitting material and the third color quantum dot light emitting material; the second color quantum dot light-emitting layer, the first carrier generation layer and the mixed light-emitting layer can be realized in a solution processing mode.
Or the mixed light-emitting layer comprises a first color quantum dot light-emitting layer and a third color quantum dot light-emitting layer which are laminated, wherein the first color quantum dot light-emitting layer comprises a first color quantum dot light-emitting material, and the third color quantum dot light-emitting layer comprises a third color quantum dot light-emitting material; and a second carrier generation layer is arranged between the first color quantum dot light-emitting layer and the third color quantum dot light-emitting layer.
At this time, the first carrier generation layer may be a P/N junction type carrier generation layer, and may be an N-type material/P-type material, wherein the N-type material may include TiO2And ZnO, the P-type material may comprise MoO3，WO3PEDOT: PSS and VOx.
Optionally, when the first auxiliary layer is a first carrier generation layer, the mixed light-emitting layer may also include a single-layer organic light-emitting layer, where the single-layer organic light-emitting layer includes a mixed first color organic light-emitting material and a mixed third color organic light-emitting material; the second color quantum dot light-emitting layer can be realized by adopting a solution processing mode, and the first carrier generation layer and the mixed light-emitting layer can be realized by adopting a vacuum evaporation process.
Or the mixed light-emitting layer comprises a first color organic light-emitting layer and a third color organic light-emitting layer which are laminated, wherein the first color organic light-emitting layer comprises a first color organic light-emitting material, and the third color organic light-emitting layer comprises a third color organic light-emitting material; a second auxiliary layer is arranged between the first color organic light-emitting layer and the third color organic light-emitting layer. The second auxiliary layer is a second carrier generation layer corresponding to the first carrier generation layer.
At this time, the type of the first carrier generation layer may include N-type doping/P-type doping (e.g., Alq)3:Cs3N/NPB:FeCl3) All organic P/N junction (e.g. CuPc/F)16CuPc，ZnO/WO3) N-type doped/metal oxide/hole transport layer type (e.g. Bphen: Li/MoO)3/m-MTDATA) or N-type doping/electron-accepting layer/hole-transporting layer type (e.g. Bphen: Li/HAT-CN/NPB).
In the above embodiment, the first color may be red, the second color may be green, and the third color may be blue. The first color, the second color, and the third color may also be other combinations of red, green, and blue, which the present invention is not limited to.
In addition, each quantum dot light-emitting material can be CdSe/ZnS, CdSe/CdS/ZnS, CIZS or CIZS/ZnS.
In an embodiment of the invention, the reflective electrode layer may be a cathode layer, and the semitransparent electrode layer may be an anode layer. Therefore, an inverted light-emitting structure can be formed, namely, the anode is arranged below the upper cathode, and high-efficiency quantum dot light emission is more favorably obtained.
An embodiment of the present invention further provides a display device, and as shown in fig. 5, the display device 100 includes the display panel 200 according to any of the embodiments.
The display device 100 may be a mobile phone, a computer, a television, an intelligent wearable display device, and the like, which is not particularly limited in this embodiment.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (18)
1. A display panel comprising a plurality of pixel regions, each of the pixel regions comprising at least a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region, the display panel further comprising:
a substrate;
a reflective electrode layer formed on the substrate;
the microcavity structure layer is formed on one side, far away from the substrate, of the reflecting electrode layer and comprises a first microcavity structure located in the first sub-pixel area, a second microcavity structure located in the second sub-pixel area and a third microcavity structure located in the third sub-pixel area; in a direction perpendicular to the display panel, the first microcavity structure, the second microcavity structure and the third microcavity structure have different cavity lengths, the first microcavity structure is used for transmitting red light, the second microcavity structure is used for transmitting green light, and the third microcavity structure is used for transmitting blue light;
a pixel defining layer formed between adjacent sub-pixel regions;
the semitransparent electrode layer is formed on one side, far away from the substrate, of the microcavity structure layer;
the packaging layer is formed on one side, far away from the substrate, of the semi-transparent electrode layer;
the microcavity structure layer comprises a white light emitting layer for synthesizing and emitting white light, and the microcavity structure layer comprises a red light emitting peak, a green light emitting peak and a blue light emitting peak, wherein the positions of the light emitting peaks meet the following conditions: the difference between the red light-emitting peak and the green light-emitting peak is larger than or equal to the sum of the half-peak width of the red light-emitting peak and the half-peak width of the green light-emitting peak, the difference between the green light-emitting peak and the blue light-emitting peak is larger than or equal to the sum of the half-peak width of the green light-emitting peak and the half-peak width of the blue light-emitting peak, and the white light-emitting layer at least comprises a quantum dot.
2. The display panel according to claim 1, wherein the white light emitting layer comprises at least one quantum dot light emitting layer, or wherein the white light emitting layer comprises at least one quantum dot light emitting layer and at least one organic light emitting layer which are stacked.
3. The display panel of claim 2 wherein the white light emitting layer comprises a quantum dot blend layer, wherein the quantum dot blend layer comprises a red quantum dot emitting material, a green quantum dot emitting material, and a blue quantum dot emitting material.
4. The display panel according to claim 3, wherein the red quantum dot luminescent material accounts for 0.1% to 10% of the red quantum dot luminescent material, the green quantum dot luminescent material accounts for 1% to 30% of the blue quantum dot luminescent material.
5. The display panel according to claim 3, wherein the quantum dot blend layer has a thickness of 10 to 100 nm.
6. The display panel of claim 2, wherein the white light emitting layer comprises a second color quantum dot light emitting layer comprising a second color quantum dot light emitting material, a first auxiliary layer, and a mixed light emitting layer comprising a first color light emitting material and a third color light emitting material.
7. The display panel of claim 6, wherein the first auxiliary layer is a first organic spacer layer comprising a voiding organic material, an electronic organic material, or a dual injection organic material.
8. The display panel according to claim 7, wherein the thickness of the first organic spacer layer is 1 to 20 nm.
9. The display panel according to claim 8, wherein the thickness of the first organic spacer layer is 3 to 5 nm.
10. The display panel according to claim 6, wherein the first auxiliary layer is a first carrier generation layer.
11. The display panel of claim 10, wherein the hybrid light emitting layer comprises a single layer quantum dot light emitting layer, wherein the single layer quantum dot light emitting layer comprises a first color quantum dot light emitting material and a third color quantum dot light emitting material that are mixed; alternatively, the first and second electrodes may be,
the mixed light-emitting layer comprises a first color quantum dot light-emitting layer and a third color quantum dot light-emitting layer which are laminated, wherein the first color quantum dot light-emitting layer comprises a first color quantum dot light-emitting material, and the third color quantum dot light-emitting layer comprises a third color quantum dot light-emitting material; and a second carrier generation layer is arranged between the first color quantum dot light-emitting layer and the third color quantum dot light-emitting layer.
12. The display panel according to any one of claims 7 to 10, wherein the mixed light emitting layer comprises a single organic light emitting layer, wherein the single organic light emitting layer comprises a mixed first color organic light emitting material and a third color organic light emitting material; alternatively, the first and second electrodes may be,
the mixed light-emitting layer comprises a first color organic light-emitting layer and a third color organic light-emitting layer which are laminated, wherein the first color organic light-emitting layer comprises a first color organic light-emitting material, and the third color organic light-emitting layer comprises a third color organic light-emitting material; and a second auxiliary layer is arranged between the first color organic light-emitting layer and the third color organic light-emitting layer.
13. The display panel of claim 6, wherein the first color is red, the second color is green, and the third color is blue.
14. The display panel according to claim 1, wherein the reflective electrode layer is a cathode layer and the semi-transparent electrode layer is an anode layer.
15. The display panel according to claim 1, wherein the first microcavity structure includes a first transparent electrode layer and the white light emitting layer that are stacked, wherein the second microcavity structure includes a second transparent electrode layer and the white light emitting layer that are stacked, wherein the third microcavity structure includes a third transparent electrode layer and the white light emitting layer that are stacked, and wherein thicknesses of the first transparent electrode layer, the second transparent electrode layer, and the third transparent electrode layer are different.
16. The display panel according to claim 15, wherein the first transparent electrode layer, the second transparent electrode layer, and/or the third transparent electrode layer comprises at least one transparent electrode layer.
17. The display panel according to claim 15, wherein a thickness of the third transparent electrode layer is 0.
18. A display device comprising the display panel according to any one of claims 1 to 17.
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390372B (en) * | 2017-08-08 | 2021-11-16 | 合肥视涯技术有限公司 | Pixel structure, forming method thereof and display screen |
| CN110459559B (en) * | 2018-05-07 | 2022-04-12 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN109103236B (en) * | 2018-09-25 | 2021-03-02 | 京东方科技集团股份有限公司 | Organic light-emitting display substrate, display device and manufacturing method thereof |
| CN109560115B (en) * | 2018-12-12 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of display panel, display panel and display device |
| CN110534657A (en) * | 2019-07-30 | 2019-12-03 | 华南理工大学 | A kind of top emitting device and preparation method thereof and full color display |
| CN112310299A (en) * | 2020-10-27 | 2021-02-02 | 武汉华星光电半导体显示技术有限公司 | Double-sided display panel and preparation method thereof |
| CN112864336A (en) * | 2021-01-11 | 2021-05-28 | 深圳市华星光电半导体显示技术有限公司 | Light emitting device |
| CN113193018B (en) | 2021-04-21 | 2022-11-08 | 武汉华星光电技术有限公司 | OLED display panel and OLED display device |
| CN113241415B (en) * | 2021-04-22 | 2022-11-18 | 南方科技大学 | Light emitting device and display apparatus |
| CN113241414A (en) * | 2021-04-22 | 2021-08-10 | 南方科技大学 | Light emitting device, display apparatus, and method of manufacturing light emitting device |
| CN114335371B (en) * | 2021-12-29 | 2024-03-12 | 湖北长江新型显示产业创新中心有限公司 | Display device and preparation method thereof |
| CN114864839B (en) * | 2022-07-08 | 2022-11-01 | 京东方科技集团股份有限公司 | Display substrate and display device |
| WO2024113171A1 (en) * | 2022-11-29 | 2024-06-06 | 京东方科技集团股份有限公司 | Display panel and display device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730584A (en) * | 2013-12-27 | 2014-04-16 | 北京京东方光电科技有限公司 | Display panel and display device |
| CN104362255A (en) * | 2014-10-21 | 2015-02-18 | 深圳市华星光电技术有限公司 | White-light OLED (organic light emitting diode) device structure |
| CN104904030A (en) * | 2013-01-04 | 2015-09-09 | 乐金显示有限公司 | OLED micro-cavity structure and method of making |
| CN104966725A (en) * | 2015-05-07 | 2015-10-07 | 深圳市华星光电技术有限公司 | Quantum dot light emitting diode display |
| CN105097879A (en) * | 2015-07-22 | 2015-11-25 | 深圳市华星光电技术有限公司 | Display panel |
| CN105514295A (en) * | 2016-02-29 | 2016-04-20 | 京东方科技集团股份有限公司 | Light emitting device, method for forming same and display device |
| CN105609535A (en) * | 2016-01-15 | 2016-05-25 | 京东方科技集团股份有限公司 | Display substrate, display device and manufacturing method of display device |
| CN105609656A (en) * | 2016-01-06 | 2016-05-25 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) and display device |
| CN106647025A (en) * | 2016-12-12 | 2017-05-10 | Tcl集团股份有限公司 | Backlight module based on quantum dots and LCD display device |
| CN106681046A (en) * | 2016-11-21 | 2017-05-17 | 京东方科技集团股份有限公司 | Color film substrate and display device |
-
2017
- 2017-05-27 CN CN201710392039.6A patent/CN106981504B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104904030A (en) * | 2013-01-04 | 2015-09-09 | 乐金显示有限公司 | OLED micro-cavity structure and method of making |
| CN103730584A (en) * | 2013-12-27 | 2014-04-16 | 北京京东方光电科技有限公司 | Display panel and display device |
| CN104362255A (en) * | 2014-10-21 | 2015-02-18 | 深圳市华星光电技术有限公司 | White-light OLED (organic light emitting diode) device structure |
| CN104966725A (en) * | 2015-05-07 | 2015-10-07 | 深圳市华星光电技术有限公司 | Quantum dot light emitting diode display |
| CN105097879A (en) * | 2015-07-22 | 2015-11-25 | 深圳市华星光电技术有限公司 | Display panel |
| CN105609656A (en) * | 2016-01-06 | 2016-05-25 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) and display device |
| CN105609535A (en) * | 2016-01-15 | 2016-05-25 | 京东方科技集团股份有限公司 | Display substrate, display device and manufacturing method of display device |
| CN105514295A (en) * | 2016-02-29 | 2016-04-20 | 京东方科技集团股份有限公司 | Light emitting device, method for forming same and display device |
| CN106681046A (en) * | 2016-11-21 | 2017-05-17 | 京东方科技集团股份有限公司 | Color film substrate and display device |
| CN106647025A (en) * | 2016-12-12 | 2017-05-10 | Tcl集团股份有限公司 | Backlight module based on quantum dots and LCD display device |
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|---|---|
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