CN106981504A - A kind of display panel and display device - Google Patents

A kind of display panel and display device Download PDF

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Publication number
CN106981504A
CN106981504A CN201710392039.6A CN201710392039A CN106981504A CN 106981504 A CN106981504 A CN 106981504A CN 201710392039 A CN201710392039 A CN 201710392039A CN 106981504 A CN106981504 A CN 106981504A
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layer
quantum dot
color
micro
peak
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CN106981504B (en
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王磊
邹建华
陶洪
徐苗
李洪濛
彭俊彪
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South China University of Technology SCUT
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South China University of Technology SCUT
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/852Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Abstract

The invention discloses display panel and display device, display panel includes:Reflection electrode layer;Micro-cavity structure layer, is formed in first electrode layer away from substrate side, including the first micro-cavity structure, the second micro-cavity structure, and the 3rd micro-cavity structure;First micro-cavity structure is used to pass through feux rouges, and the second micro-cavity structure is used to pass through green glow, and the 3rd micro-cavity structure is used to pass through blue light;Semitransparent electrode layer, is formed in micro-cavity structure layer away from substrate side;Wherein, micro-cavity structure layer includes white-light emitting layer, including emitting red light peak, green emitting peak and blue-light-emitting peak, and glow peak position is met:The difference at emitting red light peak and green emitting peak is more than or equal to emitting red light peak half-peak breadth and green emitting peak half-peak breadth sum, and the difference at green emitting peak and blue-light-emitting peak is more than or equal to green emitting peak half-peak breadth and blue-light-emitting peak half-peak breadth sum.Present invention reduces process costs and the power consumption of display device, the brightness of display device is improved.

Description

A kind of display panel and display device
Technical field
The embodiment of the present invention belongs to display technology field, is related to a kind of display panel and display device.
Background technology
In the technology for realizing Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) colorization, Include two kinds of mainstream technologys, i.e. microcavity effect rgb pixel independence luminescence technology, and white luminescent material coordinates chromatic filter layer Technology.
Microcavity effect rgb pixel, which independently lights, to be needed, using accurate metal shadow mask and pixel technique of counterpoint, to prepare microcavity The red, green, blue three-color light-emitting center of effect, realizes colorization, it is necessary to use accurate metal shadow mask, and use metal shadow mask Method be difficult to ensure that the positioning precision of sub-pixel, than the display panel of high pixel density relatively difficult to achieve, moreover, precision metallic is shady Cover is expensive, cost can be caused to increase.
And white luminescent material and the combined method of chromatic filter layer, the OLED that emits white light is prepared first, Ran Houtong Cross chromatic filter layer and obtain three primary colours, recombinant three primary colours realize colored display, the metal shadow mask that preparation process need not be accurate Technique of counterpoint, can use the chromatic filter layer technology of preparing of ripe liquid crystal display, easily realize that panel maximizes, also compare High pixel density easily is realized, so being that following prepare in OLED display technology has potential full color technology.At present, , using yellow light area technique, different thickness can be prepared on red sub-pixel, green sub-pixels and blue subpixels on reflecting electrode Spend transparent conductive electrode to realize the regulation of rgb light chamber length, and then realize the enhancing of rgb light by force.But, it is contemplated that a certain ripple After long spectrum enhancing, nearby there are other to be occurred by the spectrum that optical cavity length weakens, so also need to coloured silk in colorization process Color filtering optical layer filters out these miscellaneous peaks, while the light for having about 50% by the light of chromatic filter layer is absorbed, causes to light Luminance-reduction, improves display screen power consumption;Still further aspect, if chromatic filter layer is processed on OLED, just necessarily requires coloured silk Color filtering optical layer is realized in less than 90 DEG C techniques, improves the difficulty of technique.If chromatic filter layer is produced on the substrate of outside, It is follow-up to need accurate contraposition to be fitted with display base plate, increase technique process and cost.
The content of the invention
In view of this, the purpose of the present invention is to propose to a kind of display panel and display device, to reduce technique process, cost With the power consumption of display device, the brightness of display device is improved.
To achieve the above object, the present invention is adopted the following technical scheme that:
On the one hand, the embodiments of the invention provide a kind of display panel, including multiple pixel regions, each pixel region is extremely Include the first sub-pixel area, the second sub-pixel area and the 3rd sub-pixel area less, the display panel also includes:
Substrate;
Reflection electrode layer, is formed over the substrate;
Micro-cavity structure layer, is formed in side of the first electrode layer away from the substrate, including positioned at the described first son First micro-cavity structure of pixel region, the second micro-cavity structure positioned at second sub-pixel area, and positioned at the 3rd sub- picture 3rd micro-cavity structure in plain area;Edge is on the direction of the display panel, first micro-cavity structure, second microcavity Structure is different with the chamber length of the 3rd micro-cavity structure, and first micro-cavity structure is used to pass through feux rouges, the second microcavity knot Structure is used to pass through green glow, and the 3rd micro-cavity structure is used to pass through blue light;
Pixel defining layer, is formed between adjacent sub-pixel area;
Semitransparent electrode layer, is formed in side of the micro-cavity structure layer away from the substrate;
Encapsulated layer, is formed in side of the semitransparent electrode layer away from the substrate;
Wherein, micro-cavity structure layer includes white-light emitting layer, for synthesizing and sending white light, including emitting red light peak, Green emitting peak and blue-light-emitting peak, and glow peak position satisfaction:The difference at emitting red light peak and green emitting peak is more than or equal to The difference at emitting red light peak half-peak breadth and green emitting peak half-peak breadth sum, green emitting peak and blue-light-emitting peak is more than or equal to green Color glow peak half-peak breadth and blue-light-emitting peak half-peak breadth sum.
On the other hand, the embodiments of the invention provide a kind of display device, including the display panel described in one side face.
The beneficial effects of the invention are as follows:Display panel and display device that the present invention is provided, are set in micro-cavity structure layer White-light emitting layer for synthesizing and sending white light, the white light includes emitting red light peak, green emitting peak and blue-light-emitting peak, and Glow peak position is met:The difference at emitting red light peak and green emitting peak is more than or equal to emitting red light peak half-peak breadth and green emitting The difference at peak half-peak breadth sum, green emitting peak and blue-light-emitting peak is more than or equal to green emitting peak half-peak breadth and blue-light-emitting peak Half-peak breadth sum, the white-light emitting layer at least includes quantum dot light emitting material, when luminous because quanta point material is realized, light light Spectrum is narrow, and excitation is high, after using purer colored quanta point material synthesis white light, then passes through reflection electrode layer reflection and micro- Cavity configuration layer regulation chamber is long, is not in corresponding spuious peak, is so filtered out chromatic filter layer is not needed unrelated miscellaneous Dissipate peak.Therefore, chromatic filter layer will not be needed in the structure of the present embodiment, and will not only reduce technique process and cost, also improve The brightness of display device, and reduce the power consumption of display device.
Brief description of the drawings
The exemplary embodiment of the present invention will be described in detail by referring to accompanying drawing below, makes one of ordinary skill in the art Become apparent from the above-mentioned and other feature and advantage of the present invention, accompanying drawing:
Fig. 1 is the structural representation of existing display panel;
Fig. 2 is a kind of structural representation of display panel provided in an embodiment of the present invention;
Fig. 3 is the structural representation of another display panel provided in an embodiment of the present invention;
Fig. 4 is the structural representation of another display panel provided in an embodiment of the present invention;
Fig. 5 is the structural representation of display device provided in an embodiment of the present invention.
Embodiment
Further illustrate technical scheme below in conjunction with the accompanying drawings and by embodiment.It may be appreciated It is that specific embodiment described herein is used only for explaining the present invention, rather than limitation of the invention.Further need exist for explanation , for the ease of description, part related to the present invention rather than entire infrastructure are illustrate only in accompanying drawing.
Fig. 1 is the structural representation of existing display panel.As shown in figure 1, existing display panel may include multiple pictures Plain area, each pixel region includes red sub-pixel area, green sub-pixels area and blue subpixels area;The display panel also includes lining Bottom 1;Reflecting electrode, positioned at the side of substrate 1, including reflection to red light electrode 2 positioned at red sub-pixel area, positioned at green sub- picture The green reflection electrode 3 in plain area and the blu-ray reflection electrode 4 positioned at blue subpixels area;Transparency electrode, it is remote positioned at reflecting electrode From the side of substrate 1, including it is feux rouges transparency electrode 5 on reflection to red light electrode 2, green on green reflection electrode 3 Transparent electrode 6 and the blue light transparency electrode 7 on blu-ray reflection electrode 4;Organic luminous layer 8, it is remote positioned at transparency electrode The side of substrate 1;Semitransparent electrode 9, positioned at side of the organic luminous layer 8 away from substrate 1;Encapsulated layer 10, covers translucent electricity Pole 9;Chromatic filter layer, positioned at side of the encapsulated layer 10 away from substrate 1, including Red lightscreening plate R positioned at red sub-pixel area, Green color filter G positioned at the green sub-pixels area and blue color filter B positioned at blue subpixels area.
Reflection to red light electrode 2, green reflection electrode 3 and blu-ray reflection electrode 4 have been respectively formed on it can be seen from Fig. 1 Transparency electrode and thickness difference, so that the long h1 of chamber, the green reflection electrode of the first micro-cavity structure on reflection to red light electrode 2 The long h2 of chamber of the second micro-cavity structure on 3 is different with the long h3 of chamber of the 3rd micro-cavity structure on blu-ray reflection electrode 4, can be achieved The enhancing of rgb light by force, still, it is contemplated that after the spectrum enhancing of a certain wavelength, nearby also has other light weakened by optical cavity length Compose now, so also need to chromatic filter layer in colorization process to filter out these miscellaneous peaks, while by chromatic filter layer The light that light has about 50% is absorbed, and causes luminosity to reduce, and improves display screen power consumption;Still further aspect, if colorized optical filtering Layer is processed on OLED, is just necessarily required chromatic filter layer to be realized in less than 90 DEG C techniques, is improved the difficulty of technique.If Chromatic filter layer is produced on the substrate of outside, then follow-up to need accurate contraposition fit with display base plate, increase technique process and Cost.
In view of the above-mentioned problems, the embodiment of the present invention proposes display panel and display device.
Display panel provided in an embodiment of the present invention, including multiple pixel regions, each pixel region at least include the first sub- picture Plain area, the second sub-pixel area and the 3rd sub-pixel area, the display panel also include:
Substrate;
Reflection electrode layer, is formed on substrate;
Micro-cavity structure layer, is formed in side of the first electrode layer away from substrate, including first positioned at the first sub-pixel area Micro-cavity structure, the second micro-cavity structure positioned at the second sub-pixel area, and the 3rd micro-cavity structure positioned at the 3rd sub-pixel area;Edge On the direction of display panel, the chamber length of the first micro-cavity structure, the second micro-cavity structure and the 3rd micro-cavity structure is different, and first Micro-cavity structure is used to pass through feux rouges, and the second micro-cavity structure is used to pass through green glow, and the 3rd micro-cavity structure is used to pass through blue light;
Pixel defining layer, is formed between adjacent sub-pixel area;
Semitransparent electrode layer, is formed in side of the micro-cavity structure layer away from substrate;
Encapsulated layer, is formed in side of the semitransparent electrode layer away from substrate;
Wherein, micro-cavity structure layer includes white-light emitting layer, for synthesizing and sending white light, including emitting red light peak, green Glow peak and blue-light-emitting peak, and glow peak position satisfaction:The difference at emitting red light peak and green emitting peak is more than or equal to red The difference at glow peak half-peak breadth and green emitting peak half-peak breadth sum, green emitting peak and blue-light-emitting peak is more than or equal to green and sent out Photopeak half-peak breadth and blue-light-emitting peak half-peak breadth sum, white-light emitting layer at least include quantum dot light emitting material.
It should be noted that to realize the independent control to each pixel region, however, be evident that, reflection electrode layer includes multiple The reflecting electrode being correspondingly arranged with pixel region being separated from each other, and/or semitransparent electrode layer include it is multiple being separated from each other with picture The semitransparent electrode that plain area is correspondingly arranged.
In the embodiment of the present invention, when luminous because quanta point material is realized, luminescent spectrum is narrow, and excitation is high, using compared with After pure colored quanta point material synthesis white light, then it is long by reflection electrode layer reflection and micro-cavity structure layer regulation chamber, will not There is corresponding spuious peak, will so not need chromatic filter layer to filter out unrelated spuious peak.
Based on such scheme, the white-light emitting layer (white light for meeting glow peak locality condition can be simulated by simulated experiment The thickness of film layer and material composition etc. in luminescent layer), then further verified by spectroanalysis instrument.Thus, it can obtain the present invention White-light emitting layer needed for embodiment.
Exemplary, Fig. 2 is a kind of structural representation of display panel provided in an embodiment of the present invention.As shown in Fig. 2 should Display panel may include:
Substrate 11;
Reflection electrode layer 12, is formed on the substrate 11;
Micro-cavity structure layer, is formed in side of the first electrode layer away from substrate 11, including positioned at the of the first sub-pixel area X One micro-cavity structure, positioned at the second sub-pixel area Y the second micro-cavity structure, and positioned at the 3rd sub-pixel area Z the 3rd microcavity knot Structure;Along on the direction of display panel, the chamber length of the first micro-cavity structure, the second micro-cavity structure and the 3rd micro-cavity structure is not Together, the first micro-cavity structure is used to pass through feux rouges, and the second micro-cavity structure is used to pass through green glow, and the 3rd micro-cavity structure is used for through blue Light;
Pixel defining layer 16, is formed between adjacent sub-pixel area;
Semitransparent electrode layer 18, is formed in side of the micro-cavity structure layer away from substrate 11;
Encapsulated layer 19, is formed in 18 side away from substrate 11 of semitransparent electrode layer;
Wherein, micro-cavity structure layer includes above-mentioned white-light emitting layer 17, and the first micro-cavity structure includes the first transparent electricity of stacking Pole layer 13 and white-light emitting layer 17, the second micro-cavity structure include the second transparency electrode layer 14 and white-light emitting layer 17 of stacking, the Three micro-cavity structures include the 3rd transparent electrode layer 15 and white-light emitting layer 17 of stacking, and first transparency electrode layer 13, second is transparent Electrode layer 14 is different with the thickness of the 3rd transparent electrode layer 15.
Optionally, above-mentioned substrate 11 can be rigid substrates or flexible base board, wherein, the material of rigid substrates can be glass Glass, the material of flexible base board can be polyimides, and the thickness of substrate can be set according to process requirements and product requirement etc..
The material of first transparency electrode layer 13, second transparency electrode layer 14 and the 3rd transparent electrode layer 15 can be material of the same race Material, or different materials, optionally, first transparency electrode layer 13, second transparency electrode layer 14 and the 3rd transparent electrode layer 15 material can be one kind in IZO and ITO.
Optionally, pixel defining layer 16 can be organic material, and the pixel defining layer can limit the opening of each sub-pixel area Area (luminous zone).
Optionally, encapsulated layer 19 can be thin-film encapsulation layer.
The present embodiment in the first sub-pixel area, the second sub-pixel area and the 3rd sub-pixel area by forming the saturating of different-thickness Prescribed electrode layer, may be such that the corresponding optics cavity of each sub-pixel in the first sub-pixel area, the second sub-pixel area and the 3rd sub-pixel area Long different, it is to avoid the microcavity effect produced under same chamber length, feux rouges, green glow and blue light can be achieved strengthens simultaneously;And pass through Setting includes the white-light emitting layer of quantum dot light emitting material, eliminates spuious peak, is filtered out without chromatic filter layer unrelated Spuious peak, reduces technique process and cost, improves the brightness of display device, reduces the power consumption of display device.
Optionally, first transparency electrode layer, second transparency electrode layer and/or the 3rd transparent electrode layer include at least one layer of saturating Prescribed electrode layer.Exemplary, Fig. 3 is the structural representation of another display panel provided in an embodiment of the present invention.With shown in Fig. 2 Unlike display panel, as shown in figure 3, the present embodiment first transparency electrode layer includes two layers of transparent electrode layer, i.e., the first son The sub- transparent electrode layer 132 of transparent electrode layer 131 and second.Wherein, the first sub- transparent electrode layer of sub- transparent electrode layer 131 and second 132 can prepare for same material, can also be prepared by different materials, for example, the first sub- of transparent electrode layer 131 and second is thoroughly The material of prescribed electrode layer 132 is ITO, or the material of the first sub- transparent electrode layer 131 is ITO, the second sub- transparent electrode layer 132 material is IZO.
It should be noted that Fig. 3 is merely illustrative, second transparency electrode layer 14 and the 3rd transparent electrode layer 15 also may be used Including multi-layer transparent electrode layer, as long as the light of respective color, the invention is not limited in this regard can be only transmitted.
Optionally, the thickness of the 3rd transparent electrode layer is no third transparent electrode layer in 0, i.e. the 3rd sub-pixel area.Example Property, Fig. 4 is the structural representation of another display panel provided in an embodiment of the present invention.It is unlike the embodiments above, As shown in figure 4, the thickness of the 3rd transparent electrode layer is 0 in the present embodiment.
Thus, the present embodiment in the first sub-pixel area and the second sub-pixel area by being only lithographically formed the transparent of different-thickness Electrode layer, just may be such that the corresponding optics cavity of each sub-pixel in the first sub-pixel area, the second sub-pixel area and the 3rd sub-pixel area Long different, it is to avoid the microcavity effect produced under same chamber length, feux rouges, green glow and blue light can be achieved to be strengthened simultaneously, moreover, nothing A transparent electrode layer need to be lithographically formed in the 3rd sub-pixel area, reduce photoetching process, simplify the preparation technology of display panel, Reduce technology difficulty and cost.
Optionally, in the various embodiments described above, the chamber length of the first micro-cavity structure, the second micro-cavity structure and the 3rd micro-cavity structure with Correspondence meets Fabry-Perot resonance equation through the wavelength of light, thus, can further improve the saturating of each sub-pixel area correspondence light Rate is crossed, suppresses other light transmission.
Based on the various embodiments described above, the white-light emitting layer of the embodiment of the present invention includes at least one layer of quantum dot light emitting layer, or Person, white-light emitting layer includes at least one layer of quantum dot light emitting layer and at least one layer of organic luminous layer of stacking.
The white-light emitting layer of the embodiment of the present invention may include one layer of quantum dot light emitting layer.Exemplary, white-light emitting layer bag Quantum dot blended layer is included, wherein, quantum dot blended layer includes red quantum dot luminescent material, green quantum dot luminescent material and indigo plant Color quantum dot luminescent material.
The feux rouges and green glow of low energy may be transferred in view of blue light energy, in order that the light sent is white light, it is red The ratio of color quantum dot luminescent material and green quantum dot luminescent material can not be too high, may so lead to not blue light occur, The ratio of red quantum dot luminescent material and green quantum dot luminescent material can not be too low, may so lead to not produce foot Enough feux rouges and green glow.Optionally, above-mentioned red quantum dot luminescent material, green quantum dot luminescent material and blue quantum dot hair In luminescent material, the ratio shared by red quantum dot luminescent material is 0.1%~10%, the ratio shared by green quantum dot luminescent material Example is 1%~30%.Furthermore, it is contemplated that quantum dot blended layer is too thin, it is easy to make the positive and negative carrier capture of transmission when luminous Not exclusively, cause efficiency low, quantum dot blended layer is too thick, because transmittability is poor, cause device operating voltages very high;It is optional , the thickness of quantum dot blended layer is 10~100nm.Wherein, above-mentioned quantum dot blended layer can be realized by solution processing mode, Realized by spin coating, spraying, the coating of slit extruded type or inkjet printing mode.
In addition, white-light emitting layer may also include hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer, I.e. white-light emitting layer includes hole injection layer, hole transmission layer, quantum dot blended layer, electron transfer layer and the electronics stacked gradually Implanted layer.
The white-light emitting layer of the embodiment of the present invention may include that at least one layer of quantum dot light emitting layer and at least one layer of stacking have Machine luminescent layer.Exemplary, white-light emitting layer includes the second color quantum dot light emitting layer, the first auxiliary layer and hybrid illuminating layer, Wherein, the second color quantum dot light emitting layer includes the second color quantum dot luminescent material, and hybrid illuminating layer is sent out including the first color Luminescent material and the 3rd colour light emitting material.
Optionally, the first auxiliary layer is the first organic spacing layer, and the first organic spacing layer includes hole property organic material, electricity Sub- property organic material or Dual Implantations organic material.Thus, traditional non-series connection ray structure is may make up, wherein, first has The thickness of machine wall is 1~20nm, optionally, and the thickness of the first organic spacing layer is 3~5nm, further improves positive negative electricity The transmission characteristic of lotus, improves the capture probability to positive and negative charge.
Optionally, hybrid illuminating layer includes individual layer organic luminous layer, wherein, individual layer organic luminous layer includes the first of mixing Color luminous organic material and the 3rd color luminous organic material;Now, white-light emitting layer may also include hole injection layer, hole Transport layer, electron transfer layer and electron injecting layer, wherein, hole injection layer, hole transmission layer and the second color quantum dot light emitting Layer can realize that the first organic spacing layer, hybrid illuminating layer, electron transfer layer and electron injecting layer can be adopted using solution processing mode Realized with vacuum evaporation process.
Or, hybrid illuminating layer includes the first color organic luminous layer and the 3rd color organic luminous layer of stacking, wherein, First color organic luminous layer includes the first color luminous organic material, and it is organic that the 3rd color organic luminous layer includes the 3rd color Luminescent material;The second auxiliary layer is provided between first color organic luminous layer and the 3rd color organic luminous layer.Wherein, with One organic spacing layer correspondence, second auxiliary layer is the second organic spacing layer.
In addition, the first auxiliary layer can also produce layer for the first carrier.Now, the second color quantum dot light emitting layer and mixed Hole injection layer, hole transmission layer, luminescent layer and electricity can respectively be included respectively as single light emitting functional layer by closing luminescent layer Sub- transport layer.Layer is produced between second color quantum dot light emitting layer and hybrid illuminating layer by the first carrier to connect, with this shape Into series connection ray structure, thus, an equal amount of electric current can be made successively to flow through multiple different light emitting functional layers and sent out jointly Light, so as to improve luminosity and efficiency, compared with single ray structure, series connection ray structure can exponentially improve electric current effect Rate and luminosity, in the case of identical current density, the life-span of series connection ray structure will greatly improve.
Optionally, hybrid illuminating layer may include individual layer quantum dot light emitting layer, wherein, individual layer quantum dot light emitting layer includes mixing The first color quantum dot luminescent material and the 3rd color quantum dot luminescent material;Wherein, the second color quantum dot light emitting layer, One carrier is produced layer and hybrid illuminating layer and can realized using solution processing mode.
Or, hybrid illuminating layer includes the first color quantum dot light emitting layer and the 3rd color quantum dot light emitting layer of stacking, Wherein, the first color quantum dot light emitting layer includes the first color quantum dot luminescent material, and the 3rd color quantum dot light emitting layer includes 3rd color quantum dot luminescent material;Is provided between first color quantum dot light emitting layer and the 3rd color quantum dot light emitting layer Two carriers produce layer.
Now, the first carrier, which produces layer, to produce layer for P/N junction types carrier, can be n type material/P-type material, Wherein, n type material can include TiO2And ZnO, P-type material can include MoO3, WO3, PEDOT:PSS and VOx.
Optionally, when the first auxiliary layer is that the first carrier produces layer, hybrid illuminating layer may also comprise the organic hair of individual layer Photosphere, wherein, individual layer organic luminous layer includes the first color luminous organic material and the 3rd color luminous organic material of mixing; Second color quantum dot light emitting layer can realize that the first carrier produces layer and hybrid illuminating layer and can used using solution processing mode Vacuum evaporation process is realized.
Or, hybrid illuminating layer includes the first color organic luminous layer and the 3rd color organic luminous layer of stacking, wherein, First color organic luminous layer includes the first color luminous organic material, and it is organic that the 3rd color organic luminous layer includes the 3rd color Luminescent material;The second auxiliary layer is provided between first color organic luminous layer and the 3rd color organic luminous layer.Wherein, with One carrier produces layer correspondence, and second auxiliary layer is that the second carrier produces layer.
Now, the type of the first carrier generation layer can include n-type doping/p-type doping type (such as Alq3:Cs3N/NPB: FeCl3), full stress-strain P/N junction types (such as CuPc/F16CuPc, ZnO/WO3), n-type doping/metal oxide/hole transport stratotype (such as Bphen:Li/MoO3/ m-MTDATA) or n-type doping/electron-accepting layer/hole transport stratotype (such as Bphen:Li/HAT- CN/NPB)。
In above-described embodiment, the first color can be red, and the second color can be green, and the 3rd color can be indigo plant Color.First color, the second color and the 3rd color can also for red, green and blueness other combinations, the present invention to this not It is restricted.
In addition, above-mentioned each quantum dot light emitting material can for CdSe/ZnS, CdSe/CdS/ZnS, CdSe/CdS/ZnS, CIZS or CIZS/ZnS.
In the embodiment of the present invention, reflection electrode layer can be cathode layer, and semitransparent electrode layer can be anode layer.Thus may be used Formation inversion ray structure, i.e. anode under, are more beneficial for obtaining efficient quantum dot light emitting in upper negative electrode.
The embodiment of the present invention additionally provides a kind of display device, as shown in figure 5, the display device 100 is including any of the above-described The display panel 200 of embodiment.
Wherein, display device 100 can be mobile phone, computer, television set and intelligence wearing display device etc., the present embodiment pair This is not particularly limited.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art it is various it is obvious change, Readjust and substitute without departing from protection scope of the present invention.Therefore, although the present invention is carried out by above example It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.

Claims (18)

1. a kind of display panel, including multiple pixel regions, each pixel region at least include the first sub-pixel area, the second sub- picture Plain area and the 3rd sub-pixel area, it is characterised in that the display panel also includes:
Substrate;
Reflection electrode layer, is formed over the substrate;
Micro-cavity structure layer, is formed in side of the first electrode layer away from the substrate, including positioned at first sub-pixel First micro-cavity structure in area, the second micro-cavity structure positioned at second sub-pixel area, and positioned at the 3rd sub-pixel area The 3rd micro-cavity structure;Edge is on the direction of the display panel, first micro-cavity structure, second micro-cavity structure Different with the chamber length of the 3rd micro-cavity structure, first micro-cavity structure is used to pass through feux rouges, and second micro-cavity structure is used In passing through green glow, the 3rd micro-cavity structure is used to pass through blue light;
Pixel defining layer, is formed between adjacent sub-pixel area;
Semitransparent electrode layer, is formed in side of the micro-cavity structure layer away from the substrate;
Encapsulated layer, is formed in side of the semitransparent electrode layer away from the substrate;
Wherein, the micro-cavity structure layer includes white-light emitting layer, for synthesizing and sending white light, including emitting red light peak, green Glow peak and blue-light-emitting peak, and glow peak position satisfaction:The difference at emitting red light peak and green emitting peak is more than or equal to red The difference at glow peak half-peak breadth and green emitting peak half-peak breadth sum, green emitting peak and blue-light-emitting peak is more than or equal to green and sent out Photopeak half-peak breadth and blue-light-emitting peak half-peak breadth sum, the white-light emitting layer at least include quantum dot light emitting material.
2. display panel according to claim 1, it is characterised in that the white-light emitting layer includes at least one layer of quantum dot Luminescent layer, or, the white-light emitting layer includes at least one layer of quantum dot light emitting layer and at least one layer of organic luminous layer of stacking.
3. display panel according to claim 2, it is characterised in that the white-light emitting layer includes quantum dot blended layer, Wherein, the quantum dot blended layer includes red quantum dot luminescent material, green quantum dot luminescent material and blue quantum dot hair Luminescent material.
4. display panel according to claim 3, it is characterised in that the red quantum dot luminescent material, the green In quantum dot light emitting material and the blue quantum dot luminescent material, the ratio shared by the red quantum dot luminescent material is 0.1%~10%, the ratio shared by the green quantum dot luminescent material is 1%~30%.
5. display panel according to claim 3, it is characterised in that the thickness of the quantum dot blended layer is 10~ 100nm。
6. display panel according to claim 2, it is characterised in that the white-light emitting layer includes the second color quantum dot Luminescent layer, the first auxiliary layer and hybrid illuminating layer, wherein, the second color quantum dot light emitting layer includes the second color quantum dot Luminescent material, the hybrid illuminating layer includes the first colour light emitting material and the 3rd colour light emitting material.
7. display panel according to claim 6, it is characterised in that first auxiliary layer is the first organic spacing layer, First organic spacing layer includes hole property organic material, electro organic material or Dual Implantations organic material.
8. display panel according to claim 7, it is characterised in that the thickness of first organic spacing layer is 1~ 20nm。
9. display panel according to claim 8, it is characterised in that the thickness of first organic spacing layer is 3~ 5nm。
10. display panel according to claim 6, it is characterised in that first auxiliary layer produces for the first carrier Layer.
11. display panel according to claim 10, it is characterised in that the hybrid illuminating layer is sent out including individual layer quantum dot Photosphere, wherein, the individual layer quantum dot light emitting layer includes the first color quantum dot luminescent material and the 3rd color quantum of mixing Point luminescent material;Or,
The hybrid illuminating layer includes the first color quantum dot light emitting layer and the 3rd color quantum dot light emitting layer of stacking, wherein, The first color quantum dot light emitting layer includes the first color quantum dot luminescent material, and the 3rd color quantum dot light emitting layer includes the Three color quantum dot luminescent materials;It is provided between the first color quantum dot light emitting layer and the 3rd color quantum dot light emitting layer Second carrier produces layer.
12. the display panel according to claim any one of 7-10, it is characterised in that the hybrid illuminating layer includes individual layer Organic luminous layer, wherein, the first color luminous organic material and the 3rd color that the individual layer organic luminous layer includes mixing have Machine luminescent material;Or,
The hybrid illuminating layer includes the first color organic luminous layer and the 3rd color organic luminous layer of stacking, wherein, it is described First color organic luminous layer includes the first color luminous organic material, and the 3rd color organic luminous layer includes the 3rd color Luminous organic material;The second auxiliary is provided between the first color organic luminous layer and the 3rd color organic luminous layer Layer.
13. display panel according to claim 6, it is characterised in that the first color is red, the second color is green, 3rd color is blueness.
14. display panel according to claim 1, it is characterised in that the reflection electrode layer is cathode layer, described semi-transparent Prescribed electrode layer is anode layer.
15. display panel according to claim 1, it is characterised in that first micro-cavity structure includes the first of stacking Transparent electrode layer and the white-light emitting layer, second micro-cavity structure include the second transparency electrode layer and the white light of stacking Luminescent layer, the 3rd micro-cavity structure includes the 3rd transparent electrode layer and the white-light emitting layer of stacking, and described first is transparent Electrode layer, second transparency electrode layer are different with the thickness of the 3rd transparent electrode layer.
16. display panel according to claim 15, it is characterised in that the first transparency electrode layer, described second saturating Prescribed electrode layer and/or the 3rd transparent electrode layer include at least one layer of transparent electrode layer.
17. display panel according to claim 1, it is characterised in that the thickness of the 3rd transparent electrode layer is 0.
18. a kind of display device, it is characterised in that including the display panel as described in claim any one of 1-17.
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