CN110212104A - El display device - Google Patents
El display device Download PDFInfo
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- CN110212104A CN110212104A CN201910421521.7A CN201910421521A CN110212104A CN 110212104 A CN110212104 A CN 110212104A CN 201910421521 A CN201910421521 A CN 201910421521A CN 110212104 A CN110212104 A CN 110212104A
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- layer
- display device
- lamination
- electrode
- luminescent layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A kind of el display device, including substrate, first electrode and second electrode, the first lamination, the second lamination and charge generation layer.First lamination is set in first electrode, and including the first luminescent layer and the first electric charge barrier layer, wherein the first luminescent layer is quanta point material preparation.The setting of second lamination adjacent second electrode, and including the second luminescent layer and the second electric charge barrier layer, wherein the second luminescent layer is luminous organic material preparation.Charge generation layer is set between the first lamination and the second lamination.
Description
[technical field]
The present invention relates to field of display technology, more particularly to a kind of el display device of capable of emitting white light.
[background technique]
Organic Light Emitting Diode (organic light emitting diode, OLED) is a kind of novel display technology,
It possesses the incomparable physics advantage of liquid crystal display (liquid crystal display, LCD) technology, has and actively sends out
Light, real colour, unlimited contrast, zero-lag, the characteristics such as transparence display, Flexible Displays, display form freedom, are that can substitute
The next-generation display technology of LCD technology.Support of the OLED display technology due to not needing backlight, structure are more simple compared with LCD
Single, display small product size can accomplish more frivolous.Moreover, its operating condition has, driving voltage is low, low energy consumption, can be with the sun
The series of advantages that energy battery, integrated circuit etc. match.Since OLED is all solid state, antivacuum device, there is antidetonation to swing, is resistance to
The characteristics such as low temperature, therefore application range is very extensive.
But it is compared compared to the quantum dot TV sold currently on the market, although the color gamut performance of commercially available OLED TV can
To reach the color gamut performance of NTSC 100%, but the color gamut performance of the quantum dot TV of volume production can reach NTSC 110%
~130%.Compared with quantum dot TV, OLED TV still has no small gap in terms of colour gamut.And with display panel
Development trend, the display product of wider color gamut performance are one of the demands in client's future, and embody the important of product differentiation
Quantizating index, therefore how to promote the color gamut performance of existing OLED TV, be the panel manufacture for developing self-luminous and showing product
The a great problem that quotient will face.
[summary of the invention]
The purpose of the present invention is to provide the el display devices that color gamut performance can be substantially improved in one kind.
Another object of the present invention is to provide a kind of white-light electroluminescence display devices can be true with inverted structure
The brightness for protecting different location in panel can express uniformly, effectively solve the problems, such as brightness irregularities caused by panel pressure drop.
To achieve the above object, the present invention provides a kind of el display device, including substrate, first electrode and second
Electrode is faced each other respectively on the substrate；First lamination is set in the first electrode, and including the first luminescent layer
And first electric charge barrier layer, wherein first luminescent layer is quanta point material preparation；Second lamination, the adjacent second electrode
Setting, and including the second luminescent layer and the second electric charge barrier layer, wherein second luminescent layer is luminous organic material preparation；And
Charge generation layer is set between first lamination and second lamination.
An embodiment according to the present invention, first lamination further include the electronics being sequentially stacked in the first electrode
Implanted layer, the first electron transfer layer, first luminescent layer, first electric charge barrier layer and the first hole transmission layer, it is described
Second lamination further includes the second electron transfer layer being sequentially stacked between the charge generation layer and the second electrode, described
Second luminescent layer, second electric charge barrier layer, the second hole transmission layer and hole injection layer, wherein first charge barrier
Layer and second electric charge barrier layer are used for block charge carrier and flow to first hole transmission layer and second hole biography
Defeated layer.
Another embodiment according to the present invention, the charge generation layer are that p-type organic semiconductor and N-shaped organic semiconductor are mixed
Mould assembly is at wherein the p-type organic semiconductor, close to first lamination, the N-shaped organic semiconductor is folded close to described second
Layer.
Another embodiment according to the present invention, first luminescent layer include red light quantum point, green light quantum point or blue light
Quantum dot it is one or more, wherein the light that is issued of second luminescent layer shape in conjunction with the light that first luminescent layer issues
At white light.
Another embodiment according to the present invention, first luminescent layer include the red light quantum point and the green quantum
Point, to form compound yellow light, second luminescent layer is that organic blue luminescent material is made.
Another embodiment according to the present invention, the charge generation layer include hole generating layer and electronics generating layer.
Another embodiment according to the present invention, the first electrode is cathode, and the second electrode is anode.
Another embodiment according to the present invention, the quanta point material of first luminescent layer include organic metal halide calcium
Titanium ore, or the quantum dot light emitting material with core-shell structure.
Another embodiment according to the present invention, the luminous organic material of second luminescent layer include fluorescent material, phosphorescence
Material or thermal excitation delayed fluorescence material.
Another embodiment according to the present invention, the substrate includes thin film transistor (TFT) array, for controlling pixel circuit.
El display device of the invention utilizes the inversion with first luminescent layer and second luminescent layer
Structure, wherein first luminescent layer is that red light quantum point and green light quantum point are constituted, and second luminescent layer is organic indigo plant
Light luminescent layer, the light for issuing first luminescent layer and the second luminescent layer, which combines, forms white light, and red light quantum point and green light
Shining for quantum dot has narrow band gap feature, and color saturation is high, therefore the feux rouges of the separation of the colored filter membrane through display panel
Equally there is narrow band gap, high color saturation degree feature with green light, and then display panel is made to reach excellent color gamut performance, effectively solve to pass
The problem of the shortcomings that system WOLED can not promote color gamut performance and brightness irregularities.
[Detailed description of the invention]
Fig. 1 is the el display device of a preferred embodiment according to the present invention
Structural schematic diagram.
Fig. 2 is the el display device of a preferred embodiment according to the present invention
Another structural schematic diagram.
Fig. 3 is the luminous spectrogram of el display device of the present invention.
[specific embodiment]
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.
The present invention is a kind of el display device, by self luminous characteristic, can provide high color saturation degree and excellent
Color gamut performance, and the light that goes out of el display device of the invention is sent to and can go out light for top emitting, can also go out light for bottom emitting.
Fig. 1 is the structural schematic diagram of the el display device of a preferred embodiment according to the present invention.Electroluminescent of the invention
Display device 100 include substrate 110, the first electrode 101 that setting is faced each other on Yu Suoshu substrate 110 and second electrode 102,
First lamination 1, charge generation layer 3 and the second lamination 2.The substrate 110 is that glass or flexible material are made, and pass through etching work
Skill forms thin film transistor (TFT) array (not shown) and the first electrode 110, and the thin film transistor (TFT) array is for controlling pixel
Circuit.The charge generation layer 3 is set between the 2 of first lamination 1 and second lamination.In this embodiment, described
The material of one electrode 101 can be tin indium oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or silver-colored (Ag), but not with
This is unlimited.It illustrates, in this embodiment, the first electrode 101 is used as cathode, and the second electrode 102 is made
For anode.
As shown in Figure 1, first lamination 1 is set in the first electrode 101, and set including sequentially folding from lower to upper
Electron injecting layer 11, the first electron transfer layer 12, the first luminescent layer 10, the first electric charge barrier layer 13 and the first hole transmission layer
14.The electron injecting layer 11 and first electron transfer layer 12 are by solution processing technology, including but not limited to spin coating
It is formed in the first electrode 101.The material of the electron injecting layer 11 is metal oxide nano-material and organic electronic
Transmission material, such as nano zine oxide (ZnO), magnesium zinc oxide (ZnMgO), organic material PFN, first electron transfer layer 12
Material is included TmPyPB, but is not limited with this.
Continue referring to Fig. 1, second lamination 2 includes sequentially being stacked at the charge generation layer 3 and the second electrode
The second electron transfer layer 24, the second luminescent layer 20, the second electric charge barrier layer 23, the second hole transmission layer 22 and sky between 102
Cave implanted layer 21.Also that is, abovementioned layers construction package is sequentially to fold to set from lower to upper by the charge generation layer 3.It is described
Hole injection layer 21 is under energized state, for positive charge (i.e. hole) second hole transmission layer of Xiang Suoshu 22 to be injected, and its
Material can be, but not limited to, HATCN.
Continuous to please refer to the first figure, the charge generation layer 3 includes hole generating layer 31 and electronics generating layer 32.It is specific and
Speech, the charge generation layer 3 are the hole generating layer 31 and N-shaped organic semiconductor (N-CGL) of p-type organic semiconductor (P-CGL)
32 mixed type of electronics generating layer at wherein the p-type organic semiconductor, close to first lamination 1, the N-shaped is organic partly to lead
Body is close to second lamination 2.The hole generating layer 31 under conduction state to generate hole, the electronics generating layer 32
To generate electronics under conduction state.In addition, first hole transmission layer 14 and second hole transmission layer 22 are used for
Hole carrier in device is transmitted, material can be, such as BCP, BPhen, TRZ, PBD, TAZ, OXD-7, TPBi,
TPyPhPB, TmPyPB, but be not limited thereto.The work of first electron transfer layer 12 and second electron transfer layer 24
With being to transmit to the electric charge carrier of device, material includes but is not limited to Organic Electron Transport Material and metal-doped
Object, such as Bphen or Li.
It illustrates, the material of first electric charge barrier layer 13 and second electric charge barrier layer 23 can be identical to
First hole transmission layer 14 and the second hole transmission layer 22.First electric charge barrier layer 13 and second charge barrier
Layer 23 is respectively used to the first hole transmission layer of block charge carrier (i.e. electronics or hole) Xiang Suoshu 14 and second hole passes
Defeated layer 22 is mobile, influences the illumination effect of first luminescent layer 10 and the second luminescent layer 20.
Continuous to please refer to the first figure, first luminescent layer 10 includes red light quantum point, green light quantum point or blue light quantum point
It is one or more, material can be organic metal halide perovskite, or with the quantum dot light emitting material with core-shell structure
Material.In this preferred embodiment, first luminescent layer 10 includes the red light quantum point and the green light quantum point, to right
After Carrier recombination in device generates exciton, capture excites and emits feux rouges and green light forms compound yellow light.Second hair
Photosphere 20 is that organic blue luminescent material is made comprising fluorescent material, phosphor material or thermal excitation postpone (TADF) phosphor
Material, such as can be blue-light fluorescent material and its derivative, talan aromatic derivant, DSA derivative etc.；Blue emitting phosphor
Material metal complex of iridium etc..The first electrode 101 (cathode) and (anode) injected electrons of the second electrode 102 and sky
Cave, it is compound in first luminescent layer 10 and second luminescent layer 20, it generates different photochromic and combinations and forms white light.
Fig. 2 is another structural schematic diagram of the el display device of a preferred embodiment according to the present invention.This hair
The second electrode 102 of bright el display device 100 is equipped with cover board 4, and sets between the cover board 4 and the substrate 110
Have sealing glue frame 5, bonding the cover board 4 and the substrate 110, make the sealing of el display device 100 every
Infiltration from steam and oxygen.
Fig. 3 is the luminous spectrogram of el display device of the present invention.Utilize el display device 100 of the present invention
Display panel, red, green, blue (RGB) luminous spectrum are that white-light spectrum is isolated obtained by RGB three primary colours spectrum by colored filter membrane.
Since the white light of el display device of the present invention is compounded to form by organic blue light and quantum dot feux rouges and green light, and feux rouges amount
Son point and shining for green light quantum point have narrow band gap feature, its main feature is that color saturation is high, therefore separate through colored filter membrane
Feux rouges and green light equally there is narrow band gap, high color saturation degree feature.In comparison, with el display device of the present invention
Display panel, in the significant tradition that is higher than of NTSC color gamut performance compared with white-light organic light-emitting (white organic light
Emitting diode, WOLED) display device, and can reach about 120% NTSC color gamut performance.
In addition, just setting type white-light organic light-emitting (WOLED) display, electroluminance display dress of the invention compared to tradition
It is set to inverted structure.Also that is, cathode is provided on substrate, and anode is located at the top of el display device.Using aforementioned
Inverted structure drives the gate source voltage Vgs of thin film transistor (TFT) not influenced by OLED degradation characteristic, and drain current only has with Vgs
It closes, therefore, solves the problems, such as that panel image is remaining (Image Sticking).Simultaneously as inversion type top emitting
Top electrode is connected with the drain electrode Vdd conducting wire of driving thin film transistor (TFT), when current lead-through, the pressure drop that is generated by top electrode resistance
(IR Drop) only influences drain voltage Vdd, but Vdd is in the saturation region of driving thin film transistor (TFT) electrical property；And gate source voltage Vgs
=Vd-Vss, Vd are Data input voltage, usually fixed value, and Vss is source voltage, therefore Vdd variation is to gate source voltage shadow
Ring very little.Also that is, Vdd variation is smaller on drain current influence, the brightness of different location be can express uniformly in panel at this time, can have
Effect solves the problems, such as brightness irregularities caused by panel pressure drop (IR Drop).
It shines in conclusion el display device of the invention is utilized with first luminescent layer and described second
The inverted structure of layer, wherein first luminescent layer is constituted for red light quantum point and green light quantum point, and second luminescent layer
For organic blue light-emitting, the light for issuing first luminescent layer and the second luminescent layer, which combines, forms white light, and red quantum
Point and shining for green light quantum point have narrow band gap feature, and color saturation is high, therefore the colored filter membrane through display panel point
From feux rouges and green light equally there is narrow band gap, high color saturation degree feature, and then display panel is made to reach excellent color gamut performance, had
Effect solves the problems, such as the shortcomings that tradition WOLED can not promote color gamut performance and brightness irregularities.
Although the present invention has been disclosed above in the preferred embodiment but above preferred embodiment be not intended to limit the invention,
Those skilled in the art, without departing from the spirit and scope of the present invention, can make it is various change and retouch, therefore this
The protection scope of invention subjects to the scope of the claims.
Claims (10)
1. a kind of el display device characterized by comprising
Substrate,
First electrode and second electrode are faced each other respectively on the substrate；
First lamination is set in the first electrode, and including the first luminescent layer and the first electric charge barrier layer, wherein described first
Luminescent layer is quanta point material preparation；
Second lamination, adjacent second electrode setting, and including the second luminescent layer and the second electric charge barrier layer, wherein described the
Two luminescent layers are luminous organic material preparation；And
Charge generation layer is set between first lamination and second lamination.
2. el display device as claimed in claim 1, which is characterized in that first lamination, which further includes, is sequentially stacked at institute
State electron injecting layer, the first electron transfer layer, first luminescent layer, first electric charge barrier layer and in first electrode
One hole transmission layer, second lamination further include be sequentially stacked between the charge generation layer and the second electrode
Two electron transfer layers, second luminescent layer, second electric charge barrier layer, the second hole transmission layer and hole injection layer,
Described in the first electric charge barrier layer and second electric charge barrier layer for block charge carrier flow to first hole transport
Layer and second hole transmission layer.
3. el display device as claimed in claim 2, which is characterized in that the charge generation layer is p-type organic semiconductor
And N-shaped organic semiconductor mixed type is at wherein the p-type organic semiconductor, close to first lamination, the N-shaped is organic partly to lead
Body is close to second lamination.
4. el display device as claimed in claim 1, which is characterized in that first luminescent layer include red light quantum point,
Green light quantum point or blue light quantum point it is one or more, wherein the light that second luminescent layer is issued shines with described first
The light that layer issues combines and forms white light.
5. el display device as claimed in claim 4, which is characterized in that first luminescent layer includes the red quantum
Point and the green light quantum point, to form compound yellow light, second luminescent layer is that organic blue luminescent material is made.
6. el display device as claimed in claim 1, which is characterized in that the charge generation layer include hole generating layer and
Electronics generating layer.
7. el display device as claimed in claim 1, which is characterized in that the first electrode is cathode, and described second
Electrode is anode.
8. el display device as claimed in claim 1, which is characterized in that the quanta point material of first luminescent layer includes
Organic metal halide perovskite, or the quantum dot light emitting material with core-shell structure.
9. el display device as claimed in claim 1, which is characterized in that the luminous organic material packet of second luminescent layer
Include fluorescent material, phosphor material or thermal excitation delayed fluorescence material.
10. el display device as claimed in claim 1, which is characterized in that the substrate includes thin film transistor (TFT) array, is used
In control pixel circuit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910421521.7A CN110212104A (en) | 2019-05-21 | 2019-05-21 | El display device |
| PCT/CN2019/104022 WO2020232911A1 (en) | 2019-05-21 | 2019-09-02 | Electroluminescent display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910421521.7A CN110212104A (en) | 2019-05-21 | 2019-05-21 | El display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110212104A true CN110212104A (en) | 2019-09-06 |
Family
ID=67787950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910421521.7A Pending CN110212104A (en) | 2019-05-21 | 2019-05-21 | El display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110212104A (en) |
| WO (1) | WO2020232911A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707226A (en) * | 2019-10-16 | 2020-01-17 | 苏州大学 | Organic light-emitting device, preparation method thereof and light-emitting device |
| CN110808338A (en) * | 2019-10-10 | 2020-02-18 | 复旦大学 | Tandem quantum dot device with double light emitting surfaces |
| WO2021093027A1 (en) * | 2019-11-14 | 2021-05-20 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting device |
| CN114256428A (en) * | 2020-09-23 | 2022-03-29 | 北京小米移动软件有限公司 | Display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808338A (en) * | 2019-10-10 | 2020-02-18 | 复旦大学 | Tandem quantum dot device with double light emitting surfaces |
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| CN114256428A (en) * | 2020-09-23 | 2022-03-29 | 北京小米移动软件有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020232911A1 (en) | 2020-11-26 |
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