CN114695689A - Display device - Google Patents
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- 239000002096 quantum dot Substances 0.000 claims abstract description 172
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 36
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims 1
- 238000007639 printing Methods 0.000 abstract description 2
- 238000002347 injection Methods 0.000 description 33
- 239000007924 injection Substances 0.000 description 33
- 230000005525 hole transport Effects 0.000 description 31
- 238000000034 method Methods 0.000 description 21
- 239000003086 colorant Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及发光器件领域，尤其涉及显示器件。The present invention relates to the field of light-emitting devices, in particular to display devices.
背景技术Background technique
量子点(QD)，又称半导体纳米晶体，是一种新型的半导体纳米材料。由于其尺寸小于体材料的激子波尔半径，因此表现出强的量子限域效应，使它们具有独特的光致和电致发光性能。量子点具有量子产率高、稳定性好、高色纯度、发光颜色易调等优良的光学特性，而量子点电致发光显示技术，由于其波长可调、色彩饱和度高、材料稳定性高以及制备成本低廉等优点，成为了下一代显示技术的最佳候选者。Quantum dots (QDs), also known as semiconductor nanocrystals, are a new type of semiconductor nanomaterials. Due to their size smaller than the exciton Bohr radius of bulk materials, they exhibit strong quantum confinement effects, giving them unique photo- and electroluminescent properties. Quantum dots have excellent optical properties such as high quantum yield, good stability, high color purity, and easily adjustable luminescence color, while quantum dot electroluminescence display technology, due to its adjustable wavelength, high color saturation, and high material stability. As well as the advantages of low production cost and other advantages, it has become the best candidate for the next generation display technology.
量子点发光二极管(QLED)就是使用量子点材料作为发光层的一种电致发光器件，其继承了量子点材料的优良光学特性，在显示以及照明领域具有重要的商业应用价值，已引起了广泛的关注。经过了将近二十几年的发展，量子点发光二极管的外量子效率已经由0.01％提升至超过20％，从器件效率方面，量子点发光二极管(QLED)已经相当接近有机发光二极管(OLED)。Quantum dot light-emitting diode (QLED) is an electroluminescent device that uses quantum dot material as the light-emitting layer. It inherits the excellent optical properties of quantum dot material and has important commercial application value in the field of display and lighting, and has attracted widespread attention. s concern. After nearly two decades of development, the external quantum efficiency of quantum dot light-emitting diodes has increased from 0.01% to over 20%. In terms of device efficiency, quantum dot light-emitting diodes (QLEDs) are quite close to organic light-emitting diodes (OLEDs).
目前QLED的器件结构与OLED相似，通过空穴注入层、空穴传输层、量子点发光层、电子传输层等构成类似p-i-n结的三明治结构，通过平衡电子和空穴的注入，达到高效发光的效果。进一步地，由红绿蓝三色量子点器件组合成可以显示各种不同颜色的显示器件。目前，QLED器件的制备工艺主要采用喷墨打印工艺，但是该工艺制备的单个像素点无法做到和蒸镀工艺一样小的尺寸，也因此限制了显示器件分辨率的提高。蒸镀工艺制备的单个像素点的大小受到金属掩模板的调控，可以做到很高的分辨率；但是在喷墨打印工艺中，由于受到液滴大小的限制，像素点的大小无法无限制地缩小，所以制备出的显示器件的分辨率也受到了限制。At present, the device structure of QLED is similar to that of OLED. A p-i-n junction-like sandwich structure is formed by a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer. Effect. Further, the red, green and blue quantum dot devices are combined to form a display device that can display various colors. At present, the preparation process of QLED devices mainly adopts the inkjet printing process, but the single pixel prepared by this process cannot be as small as the evaporation process, which also limits the improvement of the resolution of the display device. The size of a single pixel prepared by the evaporation process is regulated by the metal mask, which can achieve high resolution; but in the inkjet printing process, due to the limitation of the droplet size, the size of the pixel cannot be unlimited. shrinking, so the resolution of the fabricated display device is also limited.
因此，现有技术还有待于改进。Therefore, the existing technology still needs to be improved.
发明内容SUMMARY OF THE INVENTION
本发明公开了一种显示器件，旨在解决现有技术因单个像素点的尺寸限制导致制备出的显示器件分辨率受限的问题。The invention discloses a display device, aiming at solving the problem that the resolution of the prepared display device is limited due to the size limitation of a single pixel point in the prior art.
本发明的技术方案如下：The technical scheme of the present invention is as follows:
一种显示器件，其中，包括若干个像素点结构，每个像素点结构包括一个红绿色子像素点单元和一个蓝色子像素点单元；A display device, comprising several pixel point structures, each pixel point structure including a red-green sub-pixel point unit and a blue sub-pixel point unit;
所述红绿色子像素点单元包括依次层叠设置的第一电极、第一量子点发光层、第二电极、第二量子点发光层和第三电极，The red-green sub-pixel unit includes a first electrode, a first quantum dot light-emitting layer, a second electrode, a second quantum dot light-emitting layer and a third electrode that are stacked in sequence,
第一量子点发光层和第二量子点发光层能够单独发光或交替发光，The first quantum dot light-emitting layer and the second quantum dot light-emitting layer can emit light independently or alternately,
第一量子点发光层和第二量子点发光层中的一者能够发出红光，另一者能够发出绿光，One of the first quantum dot light-emitting layer and the second quantum dot light-emitting layer can emit red light, and the other can emit green light,
第二电极连接有TFT薄膜晶体管，The second electrode is connected with a TFT thin film transistor,
第一电极、第一量子点发光层和第二电极形成正置型发光器件和倒置型发光器件中的一者，第二电极、第二量子点发光层和第三电极形成正置型发光器件和倒置型发光器件中的同一者。The first electrode, the first quantum dot light-emitting layer, and the second electrode form one of a positive light-emitting device and an inverted light-emitting device, and the second electrode, the second quantum dot light-emitting layer, and the third electrode form a positive light-emitting device and an inverted light-emitting device. type of light-emitting devices.
有益效果：本发明公开了一种显示器件，通过将红光子像素单元和绿光子像素单元整合至一个像素单元中，从而压缩减少了单个像素点结构中子像素点单元的个数(由3个变为2个)，减小了单个像素点结构的面积，进而提高了打印显示器件的分辨率。本发明提供的显示器件不仅具有较高的分辨率，而且简化了驱动电极数量，减少了电路损耗。Beneficial effects: The present invention discloses a display device, by integrating the red sub-pixel unit and the green sub-pixel unit into one pixel unit, thereby compressing and reducing the number of sub-pixel point units in a single pixel point structure (from 3 sub-pixel units). becomes 2), reducing the area of a single pixel structure, thereby improving the resolution of the printed display device. The display device provided by the present invention not only has higher resolution, but also simplifies the number of driving electrodes and reduces circuit loss.
附图说明Description of drawings
图1为本发明提供的一种显示器件较佳实施例的结构示意图。FIG. 1 is a schematic structural diagram of a preferred embodiment of a display device provided by the present invention.
具体实施方式Detailed ways
本发明提供一种显示器件，为使本发明的目的、技术方案及效果更加清楚、明确，以下对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。The present invention provides a display device. In order to make the purpose, technical solutions and effects of the present invention clearer and clearer, the present invention will be described in further detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
可以理解，本发明所使用的术语“第一”、“第二”等可在本文中用于描述各种元件，但这些元件不受这些术语限制。这些术语仅用于将第一个元件与另一个元件区分。举例来说，在不脱离本发明的范围的情况下，可以将第一电极称为第二电极，且类似地，可将第二电极称为第一电极。第一电极和第二电极两者都是电极，但其不是同一电极。It will be understood that the terms "first", "second", etc., as used herein, may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, a first electrode may be referred to as a second electrode, and, similarly, a second electrode may be referred to as a first electrode, without departing from the scope of the present invention. Both the first electrode and the second electrode are electrodes, but they are not the same electrode.
在喷墨打印制备QLED器件的工艺中，由于受到液滴大小的限制，像素点的大小无法无限制地缩小，导致制备出的显示器件的分辨率也受到了限制。In the process of preparing QLED devices by inkjet printing, due to the limitation of droplet size, the size of pixels cannot be reduced indefinitely, resulting in limited resolution of the prepared display device.
基于此，本发明提供了一种显示器件，如图1所示，其包括若干个像素点结构，每个像素点结构包括一个红绿色子像素点单元10和一个蓝色子像素点单元20；所述红绿色子像素点单元10包括第一电极(形成于基板上)、第一量子点发光层、第二电极、第二量子点发光层、第三电极；Based on this, the present invention provides a display device, as shown in FIG. 1 , which includes several pixel point structures, and each pixel point structure includes a red-green
当红绿色子像素点单元发出的光从第三电极射出时，则第一量子点发光层发红光，第二量子点发光层发绿光；When the light emitted by the red-green sub-pixel unit is emitted from the third electrode, the first quantum dot light-emitting layer emits red light, and the second quantum dot light-emitting layer emits green light;
当红绿色子像素点单元发出的光从第一电极射出时，则第二量子点发光层发红光，第一量子点发光层发绿光。When the light emitted by the red-green sub-pixel unit is emitted from the first electrode, the second quantum dot light-emitting layer emits red light, and the first quantum dot light-emitting layer emits green light.
也就是说，本实施例提供的红绿色子像素点单元10由两种发光波长的量子点发光二极管结合而成：第一量子点发光二极管(由第一电极、第一量子点发光层与第二电极组成)和第二量子点发光二极管(由第三电极、第二量子点发光层与第二电极组成)，第一量子点发光二极管和第二量子点发光二极管通过公用的第二电极结合在一起，所述第一量子点发光层的发光波长和第二量子点发光层中的一者能够发出红光，另一者能够发出绿光。需说明的是，光的颜色是由光的波长决定的，发光波长不同，对应的发光颜色就不同。因此，也可以说，本实施例提供的红绿色子像素点单元10由两种颜色的量子点发光二极管结合而成。That is to say, the red and
本实施例通过将两种颜色的量子点发光二极管结合到一个红绿色子像素点单元结构中，从而压缩减少了单个像素点结构中量子点发光二极管的个数，减小了单个像素点结构的面积，进而提高了打印显示器件的分辨率。本实施例提供的显示器件不仅具有较高的分辨率，而且简化了驱动电极数量，减少了电路损耗。In this embodiment, the quantum dot light-emitting diodes of two colors are combined into a red-green sub-pixel dot unit structure, thereby compressing and reducing the number of quantum dot light-emitting diodes in a single pixel dot structure, and reducing the single pixel dot structure. area, thereby improving the resolution of the printed display device. The display device provided by this embodiment not only has higher resolution, but also simplifies the number of driving electrodes and reduces circuit loss.
本实施例中，红绿色子像素点单元的结构可以有多种形式，这是因为量子点发光二极管的结构可以有多种形式，且量子点发光二极管的结构有两种：正置结构和倒置结构。本实施例中的第一量子点发光二极管的结构与第二量子点发光二极管的结构相同，当第一量子点发光二极管的结构为正置结构时，第二量子点发光二极管的结构也为正置结构；当第一量子点发光二极管的结构为倒置结构时，第二量子点发光二极管的结构也为倒置结构。In this embodiment, the structure of the red and green sub-pixel unit can have various forms, because the structure of the quantum dot light emitting diode can have various forms, and the structure of the quantum dot light emitting diode has two types: upright structure and inverted structure structure. The structure of the first quantum dot light emitting diode in this embodiment is the same as that of the second quantum dot light emitting diode. When the structure of the first quantum dot light emitting diode is an upright structure, the structure of the second quantum dot light emitting diode is also positive When the structure of the first quantum dot light emitting diode is an inverted structure, the structure of the second quantum dot light emitting diode is also an inverted structure.
本实施例该红绿色子像素点单元的工作原理可以为：第二电极作为驱动电极连接有TFT薄膜晶体管，The working principle of the red and green sub-pixel point unit in this embodiment may be as follows: the second electrode is connected with a TFT thin film transistor as a driving electrode,
若第一量子点发光二极管和第二量子点发光二极管均为正置结构，则当第二电极接负电压，第一电极和第三电极接正电压且均与第二电极导通时，则第一量子点发光二极管发光，第二量子点发光二极管不发光；当第二电极接正电压，第一电极和第三电极接负电压且均与第二电极导通时，则第一量子点发光二极管不发光，第二量子点发光二极管发光。If both the first quantum dot light-emitting diode and the second quantum dot light-emitting diode are in a positive structure, when the second electrode is connected to a negative voltage, the first electrode and the third electrode are connected to a positive voltage and both are connected to the second electrode, then The first quantum dot light-emitting diode emits light, and the second quantum dot light-emitting diode does not emit light; when the second electrode is connected to a positive voltage, the first electrode and the third electrode are connected to a negative voltage and both are connected to the second electrode, then the first quantum dot The light emitting diode does not emit light, and the second quantum dot light emitting diode emits light.
若第一量子点发光二极管和第二量子点发光二极管均为倒置结构，则当第二电极接负电压，第一电极和第三电极接正电压且均与第二电极导通时，则第一量子点发光二极管不发光，第二量子点发光二极管发光；当第二电极接正电压，第一电极和第三电极接负电压且均与第二电极导通时，则第一量子点发光二极管发光，第二量子点发光二极管不发光。If the first quantum dot light-emitting diode and the second quantum dot light-emitting diode are both inverted structures, when the second electrode is connected to a negative voltage, the first electrode and the third electrode are connected to a positive voltage and both are connected to the second electrode, the first A quantum dot light-emitting diode does not emit light, and the second quantum dot light-emitting diode emits light; when the second electrode is connected to a positive voltage, the first electrode and the third electrode are connected to a negative voltage and both are connected to the second electrode, then the first quantum dot emits light. The diode emits light, and the second quantum dot light-emitting diode does not emit light.
若第二电极接交流电，第一电极和第三电极均与第二电极导通时，则所述第一量子点发光二极管和第二量子点发光二极管交替发光，互不影响。If the second electrode is connected to alternating current, and both the first electrode and the third electrode are connected to the second electrode, the first quantum dot light emitting diode and the second quantum dot light emitting diode alternately emit light without affecting each other.
本实施例中，当红绿色子像素点单元为顶发射结构，即红绿色子像素点单元发出的光从第三电极射出时，则第一量子点发光层发红光，第二量子点发光层发绿光。如此，第一量子点发光层发出的红光在经过第二量子点发光层时，不会激发第二量子点发光层发绿光，从而可以确保量子点发光器件发出的光的纯度。In this embodiment, when the red and green sub-pixel units have a top emission structure, that is, when the light emitted by the red and green sub-pixel units is emitted from the third electrode, the first quantum dot light-emitting layer emits red light, and the second quantum dot light-emitting layer Glows green. In this way, when the red light emitted by the first quantum dot light-emitting layer passes through the second quantum dot light-emitting layer, the second quantum dot light-emitting layer will not be excited to emit green light, thereby ensuring the purity of the light emitted by the quantum dot light-emitting device.
本实施例中，当红绿色子像素点单元为底发射结构，即红绿色子像素点单元发出的光从第一电极射出时，第二量子点发光层发红光，第一量子点发光层发绿光。如此，第二量子点发光层发出的红光在经过第一量子点发光层时，不会激发第一量子点发光层发绿光，从而可以确保量子点发光器件发出的光的纯度。In this embodiment, when the red and green sub-pixel units have a bottom emission structure, that is, when the light emitted by the red and green sub-pixel units is emitted from the first electrode, the second quantum dot light-emitting layer emits red light, and the first quantum dot light-emitting layer emits red light. green light. In this way, when the red light emitted by the second quantum dot light emitting layer passes through the first quantum dot light emitting layer, the first quantum dot light emitting layer will not be excited to emit green light, thereby ensuring the purity of the light emitted by the quantum dot light emitting device.
当红绿色子像素点单元为顶发射结构时，所述第一电极为全反射电极，所述第二电极为透明电极或半透明电极，所述第三电极为透明电极。在一种实施方式中，所述第二电极为半透明电极。当使用半透明电极的时候，首先该半透明电极和透明电极之间会形成强微腔结构，从而提高了它们之间第二量子点发光层的发光效率；另外，半透明电极可以在一定程度上隔离两个量子点发光层，减少短波长的光激发另一量子点发光层中的发光波长较长的量子点。因此，第二电极采用半透明电极，可以提高量子点发光器件的发光效率，也提高了出光的单色性，使得该发光器件的应用范围更加广泛。When the red and green sub-pixel unit is a top emission structure, the first electrode is a total reflection electrode, the second electrode is a transparent electrode or a semi-transparent electrode, and the third electrode is a transparent electrode. In one embodiment, the second electrode is a translucent electrode. When using a translucent electrode, firstly, a strong microcavity structure will be formed between the translucent electrode and the transparent electrode, thereby improving the luminous efficiency of the second quantum dot light-emitting layer between them; By isolating the two quantum dot light-emitting layers, the short-wavelength light is reduced to excite the quantum dots with longer light-emitting wavelengths in the other quantum dot light-emitting layer. Therefore, when the second electrode adopts a semi-transparent electrode, the luminous efficiency of the quantum dot light-emitting device can be improved, and the monochromaticity of the light output can also be improved, so that the application range of the light-emitting device is wider.
当红绿色子像素点单元为底发射结构时，所述第一电极为透明电极，所述第二电极为透明电极或半透明电极，所述第三电极为全反射电极。在一种实施方式中，第二电极为半透明电极。当使用半透明电极的时候，首先该半透明电极和透明电极之间会形成强微腔结构，从而提高了它们之间第二量子点发光层的发光效率；另外，半透明电极可以在一定程度上隔离两个量子点发光层，减少短波长的光激发另一量子点发光层中的发光波长较长的量子点。因此，第二电极采用半透明电极，可以提高量子点发光器件的发光效率，也提高了出光的单色性，使得该发光器件的应用范围更加广泛。When the red and green sub-pixel unit is a bottom emission structure, the first electrode is a transparent electrode, the second electrode is a transparent electrode or a semi-transparent electrode, and the third electrode is a total reflection electrode. In one embodiment, the second electrode is a translucent electrode. When using a translucent electrode, firstly, a strong microcavity structure will be formed between the translucent electrode and the transparent electrode, thereby improving the luminous efficiency of the second quantum dot light-emitting layer between them; By isolating the two quantum dot light-emitting layers, the short-wavelength light is reduced to excite the quantum dots with longer light-emitting wavelengths in the other quantum dot light-emitting layer. Therefore, when the second electrode adopts a semi-transparent electrode, the luminous efficiency of the quantum dot light-emitting device can be improved, and the monochromaticity of the light output can also be improved, so that the application range of the light-emitting device is wider.
需说明的是，所述全反射电极指的是能够将光线全部反射的电极，所述半透明电极指的是能够将部分光线反射、部分光线透射的电极，所述透明电极指的是能够将光线全部透射的电极。It should be noted that the total reflection electrode refers to an electrode that can fully reflect light, the semitransparent electrode refers to an electrode that can reflect part of light and transmit part of light, and the transparent electrode refers to an electrode that can reflect light. electrodes that transmit all light.
在一种实施方式中，所述全反射电极的材料选自Al、Ag、Ag基合金(如Mg与Ag构成的合金等)等金属及其合金材料中的一种，但不限于此。需说明的是，本发明实施例中，所述全反射电极两侧还可以设置ITO电极(透明电极)，如ITO/Ag/ITO、ITO/Ag基合金/ITO，以降低电极的功函数，利于电荷注入。In an embodiment, the material of the total reflection electrode is selected from one of metals such as Al, Ag, Ag-based alloy (such as an alloy composed of Mg and Ag, etc.) and their alloy materials, but is not limited thereto. It should be noted that, in the embodiment of the present invention, ITO electrodes (transparent electrodes), such as ITO/Ag/ITO, ITO/Ag-based alloy/ITO, may also be arranged on both sides of the total reflection electrode, so as to reduce the work function of the electrode, for charge injection.
在一种实施方式中，所述半透明电极的材料选自Al、Ag、Ag基合金(如Mg与Ag构成的合金等)等金属及其合金材料中的一种，但不限于此。需说明的是，本发明实施例中，所述半透明电极两侧或一侧还可以设置IZO电极(透明电极)，如IZO/Ag/IZO、Ag/IZO，以降低电极的功函数，利于电荷注入。In one embodiment, the material of the translucent electrode is selected from one of metals such as Al, Ag, Ag-based alloys (such as an alloy composed of Mg and Ag, etc.) and their alloy materials, but is not limited thereto. It should be noted that, in the embodiment of the present invention, IZO electrodes (transparent electrodes), such as IZO/Ag/IZO, Ag/IZO, may also be provided on both sides or one side of the translucent electrode, so as to reduce the work function of the electrode and facilitate the charge injection.
在一种实施方式中，所述透明电极的材料可以选自铟掺杂氧化锡(ITO)、氟掺杂氧化锡(FTO)、锑掺杂氧化锡(ATO)、铟掺杂氧化锌(IZO)和铝掺杂氧化锌(AZO)等中的一种或多种，但不限于此。In one embodiment, the material of the transparent electrode may be selected from indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), indium doped zinc oxide (IZO) ) and one or more of aluminum-doped zinc oxide (AZO), etc., but not limited thereto.
需说明的是，上述全反射电极与半透明电极可选的材料范围相同，具体可选相同范围中的同种或不同种材料。通过控制电极层厚度，可以使得该层具有全反射或半透明功能。当金属或金属合金材料制作形成的电极层厚度在80nm以上时，具有全反射功能；当金属或金属合金材料制作形成的电极层厚度在10-30nm时，具有半透明功能。在一种实施方式中，所述全反射电极的厚度为80-200nm，所述半透明电极的厚度为10-30nm。It should be noted that the range of materials that can be selected for the above-mentioned total reflection electrode and the translucent electrode is the same, and specifically, the same or different materials in the same range can be selected. By controlling the thickness of the electrode layer, the layer can be made to have the function of total reflection or translucency. When the thickness of the electrode layer made of metal or metal alloy material is more than 80nm, it has the function of total reflection; when the thickness of the electrode layer made of metal or metal alloy material is 10-30nm, it has the function of translucent. In one embodiment, the thickness of the total reflection electrode is 80-200 nm, and the thickness of the semi-transparent electrode is 10-30 nm.
在一种实施方式中，当所述第一量子点发光二极管和第二量子点发光二极管均为正置结构时，则所述红绿色子像素点单元还包括：In one embodiment, when the first quantum dot light-emitting diode and the second quantum dot light-emitting diode are both upright structures, the red and green sub-pixel unit further includes:
第一空穴注入层，所述第一空穴注入层设置在所述第一电极和第一量子点发光层之间；a first hole injection layer, the first hole injection layer is disposed between the first electrode and the first quantum dot light-emitting layer;
第一空穴传输层，所述第一空穴传输层设置在所述第一空穴注入层和第一量子点发光层之间；a first hole transport layer, the first hole transport layer is disposed between the first hole injection layer and the first quantum dot light-emitting layer;
第一电子传输层，所述第一电子传输层设置在所述第二电极和第一量子点发光层之间；a first electron transport layer, the first electron transport layer is disposed between the second electrode and the first quantum dot light-emitting layer;
第二空穴注入层，所述第二空穴注入层设置在所述第二电极和第二量子点发光层之间；a second hole injection layer, the second hole injection layer is disposed between the second electrode and the second quantum dot light-emitting layer;
第二空穴传输层，所述第二空穴传输层设置在所述第二空穴注入层和第二量子点发光层之间；a second hole transport layer, the second hole transport layer is disposed between the second hole injection layer and the second quantum dot light-emitting layer;
第二电子传输层，所述第二电子传输层设置在所述第二量子点发光层和第三电极之间。A second electron transport layer, the second electron transport layer is disposed between the second quantum dot light-emitting layer and the third electrode.
在一种实施方式中，当所述第一量子点发光二极管和第二量子点发光二极管均为倒置结构时，则所述红绿色子像素点单元还包括：In one embodiment, when the first quantum dot light-emitting diode and the second quantum dot light-emitting diode are both inverted structures, the red-green sub-pixel unit further includes:
第一电子传输层，所述第一电子传输层设置在第一电极和第一量子点发光层之间；a first electron transport layer, the first electron transport layer is disposed between the first electrode and the first quantum dot light-emitting layer;
第一空穴传输层，所述第一空穴传输层设置在第一量子点发光层和第二电极之间；a first hole transport layer, the first hole transport layer is disposed between the first quantum dot light-emitting layer and the second electrode;
第一空穴注入层，所述第一空穴注入层设置在所述第一空穴传输层和第二电极之间；a first hole injection layer, the first hole injection layer is disposed between the first hole transport layer and the second electrode;
第二电子传输层，所述第二电子传输层设置在第二电极和第二量子点发光层之间；a second electron transport layer, the second electron transport layer is disposed between the second electrode and the second quantum dot light-emitting layer;
第二空穴传输层，所述第二空穴传输层设置在第二量子点发光层和第三电极之间；a second hole transport layer, the second hole transport layer is disposed between the second quantum dot light-emitting layer and the third electrode;
第三空穴注入层，所述第三空穴注入层设置在第二空穴传输层和第三电极之间。A third hole injection layer, the third hole injection layer is disposed between the second hole transport layer and the third electrode.
在一种实施方式中，所述基板可以为刚性材质的基板，如玻璃等，也可以为柔性材质的基板，如PET或PI等中的一种。In one embodiment, the substrate may be a substrate of rigid material, such as glass, or a substrate of flexible material, such as one of PET or PI.
在一种实施方式中，所述第一空穴注入层和第二空穴注入层的材料可以独立地选自PEODT：PSS、MoO3、WoO3、NiO、HATCN、CuO、V2O5和CuS等中的一种或多种。In one embodiment, the materials of the first hole injection layer and the second hole injection layer may be independently selected from PEODT: PSS, MoO 3 , WoO 3 , NiO, HATCN, CuO, V 2 O 5 and One or more of CuS, etc.
在一种实施方式中，所述第一空穴传输层和第二空穴传输层的材料可以独立地选自TFB、PVK、Poly-TBP、Poly-TPD、、NPB、TCTA、TAPC、CBP、PEODT：PSS、MoO3、WoO3、NiO、CuO、V2O5和CuS等中的一种或多种。In one embodiment, the materials of the first hole transport layer and the second hole transport layer may be independently selected from TFB, PVK, Poly-TBP, Poly-TPD, NPB, TCTA, TAPC, CBP, PEODT: one or more of PSS, MoO 3 , WoO 3 , NiO, CuO, V 2 O 5 , CuS, and the like.
在一种实施方式中，所述第一电子传输层和第二电子传输层的材料可以独立地选自ZnO、ZrO、TiO2、Alq3、TAZ、TPBI、PBD、BCP、Bphen等中的一种或多种。In one embodiment, the materials of the first electron transport layer and the second electron transport layer may be independently selected from one of ZnO, ZrO, TiO 2 , Alq 3 , TAZ, TPBI, PBD, BCP, Bphen, etc. or more.
在一种实施方式中，所述第一量子点发光层和第二量子点发光层的材料可以选自II-VI族化合物、II-V族化合物、IV-VI族化合物、I-III-VI族化合物和I-II-IV-VI族化合物等中的一种或多种。In one embodiment, the materials of the first quantum dot light-emitting layer and the second quantum dot light-emitting layer may be selected from the group consisting of II-VI compounds, II-V compounds, IV-VI compounds, and I-III-VI compounds. One or more of group compounds and I-II-IV-VI compounds and the like.
在一些实施方式中，所述蓝色子像素点单元20包括依次层叠设置的第四电极、第三量子点发光层以及第五电极，所述第四电极21或第五电极22连接有TFT薄膜晶体管。在本实施例中，所述蓝色子像素单元在TFT薄膜晶体管的驱动下发蓝光。In some embodiments, the
本实施例将发不同颜色光的第一量子点发光二极管和第二量子点发光二极管整合至一个红绿子像素单元中，整合后的红绿子像素单元可以根据需要控制第一量子点发光二极管和第二量子点发光二极管单独发红光或绿光，还可根据需要控制所述第一量子点发光二极管和第二量子点发光二极管交替发红光和绿光，其与蓝色子像素单元发出的蓝光可组合形成多种色光。本实施例将单个像素点结构从传统的RGB三个子像素单元组成减少至由两个子像素单元组成，减小了单个像素点结构的面积，进而提高了打印显示器件的分辨率。本实施例提供的显示器件不仅具有较高的分辨率，而且简化了驱动电极数量，减少了电路损耗。In this embodiment, the first quantum dot light-emitting diode and the second quantum dot light-emitting diode that emit light of different colors are integrated into one red and green sub-pixel unit, and the integrated red and green sub-pixel unit can control the first quantum dot light-emitting diode as required and the second quantum dot light-emitting diode to emit red light or green light independently, and the first quantum dot light-emitting diode and the second quantum dot light-emitting diode can also be controlled to alternately emit red light and green light as required, which is consistent with the blue sub-pixel unit. The emitted blue light can be combined to form multiple colors of light. This embodiment reduces the single pixel structure from the traditional three RGB sub-pixel units to two sub-pixel units, reduces the area of the single pixel structure, and further improves the resolution of the printed display device. The display device provided by this embodiment not only has higher resolution, but also simplifies the number of driving electrodes and reduces circuit loss.
以本实施例提供的正置结构的红绿色子像素点单元为例，以所述第二电极12为驱动电极，若在所述驱动电极上加上负电压，在第一电极和第三电极加上正电压且均与驱动电极导通时，则此时的空穴和电子在所述第一量子点发光层复合并激发所述第一量子点发光层发光，此时的第二量子点发光层未受到激发不发光；若在所述驱动电极上加上正电压，在第一电极和第三电极加上负电压且均与驱动电极导通时，则此时的空穴和电子在所述第二量子点发光层复合并激发所述第二量子点发光层发光，此时的第一量子点发光层未受到激发不发光；若在所述驱动电极上加上交流电压，则所述第一量子点发光层和所述第二量子点发光层交替受到激子激发而实现交替发光，并且通过调节交流电压的相对比例，则可以调节所述第一量子点发光层和第二量子点发光层发出两种不同颜色光的相对强度，从而发出这两种不同颜色组合形成的各种色光。本实施例将两种发不同颜色的子像素单元复合到了一个子像素单元中，既简化了显示器件结构又简化了其制备工艺，缩小了器件面积，提升了显示器件的分辨率，也使得显示器件的应用范围更广。Taking the red and green sub-pixel unit of the vertical structure provided in this embodiment as an example, the second electrode 12 is used as the driving electrode. If a negative voltage is applied to the driving electrode, the first electrode and the third electrode When a positive voltage is applied and both are connected to the driving electrode, the holes and electrons at this time recombine in the first quantum dot light-emitting layer and excite the first quantum dot light-emitting layer to emit light. At this time, the second quantum dot The light-emitting layer does not emit light if it is not excited; if a positive voltage is applied to the drive electrode, and a negative voltage is applied to the first electrode and the third electrode and both are connected to the drive electrode, the holes and electrons at this time are The second quantum dot light-emitting layer recombines and excites the second quantum dot light-emitting layer to emit light. At this time, the first quantum dot light-emitting layer is not excited and does not emit light; if an AC voltage is applied to the driving electrode, all the The first quantum dot light-emitting layer and the second quantum dot light-emitting layer are alternately excited by excitons to achieve alternate light emission, and by adjusting the relative ratio of the AC voltage, the first quantum dot light-emitting layer and the second quantum dot light-emitting layer can be adjusted. The point light-emitting layer emits the relative intensities of the two different colors of light, thereby emitting various color lights formed by the combination of the two different colors. In this embodiment, two sub-pixel units that emit different colors are combined into one sub-pixel unit, which simplifies both the structure of the display device and the fabrication process, reduces the area of the device, improves the resolution of the display device, and makes the display device easier to display. The device has a wider range of applications.
在一些实施方式中，还提供一种显示器件的制备方法，其特征在于，包括步骤：In some embodiments, there is also provided a method for preparing a display device, characterized in that it comprises the steps of:
在基板上制备间隔分布的底电极；Prepare spaced bottom electrodes on the substrate;
在相邻底电极之间制备像素点bank，并形成若干个相邻的像素点腔体；A pixel bank is prepared between adjacent bottom electrodes, and several adjacent pixel cavities are formed;
在相邻的两个像素点腔体内分别制备红绿色子像素单元和蓝色子像素单元，其中红绿色子像素单元包括依次层叠设置的第一电极、第一量子点发光层、第二电极、第二量子点发光层、第三电极；所述蓝色子像素单元包括依次层叠设置的第四电极、第三量子点发光层以及第五电极。Red and green sub-pixel units and blue sub-pixel units are respectively prepared in two adjacent pixel point cavities, wherein the red and green sub-pixel units include a first electrode, a first quantum dot light-emitting layer, a second electrode, The second quantum dot light-emitting layer and the third electrode; the blue sub-pixel unit includes a fourth electrode, a third quantum dot light-emitting layer and a fifth electrode that are stacked in sequence.
本实施例制备的红绿色子像素点单元10由两种发光波长的量子点发光二极管结合而成：第一量子点发光二极管(由第一电极、第一量子点发光层与第二电极组成)和第二量子点发光二极管(由第三电极、第二量子点发光层与第二电极组成)，第一量子点发光二极管和第二量子点发光二极管通过公用的第二电极结合在一起，所述第一量子点发光层的发光波长和第二量子点发光层中的一者能够发出红光，另一者能够发出绿光。The red-
本实施例通过将两种颜色的量子点发光二极管结合到一个红绿色子像素点单元结构中，从而压缩减少了单个像素点结构中量子点发光二极管的个数，减小了单个像素点结构的面积，进而提高了打印显示器件的分辨率。本实施例提供的显示器件不仅具有较高的分辨率，而且简化了驱动电极数量，减少了电路损耗。In this embodiment, the quantum dot light-emitting diodes of two colors are combined into a red-green sub-pixel dot unit structure, thereby compressing and reducing the number of quantum dot light-emitting diodes in a single pixel dot structure, and reducing the single pixel dot structure. area, thereby improving the resolution of the printed display device. The display device provided by this embodiment not only has higher resolution, but also simplifies the number of driving electrodes and reduces circuit loss.
本实施例中，各层制备方法可以是化学法或物理法，其中化学法包括但不限于化学气相沉积法、连续离子层吸附与反应法、阳极氧化法、电解沉积法、共沉淀法中的一种或多种；物理法包括但不限于溶液法(如旋涂法、印刷法、刮涂法、浸渍提拉法、浸泡法、喷涂法、滚涂法、浇铸法、狭缝式涂布法或条状涂布法等)、蒸镀法(如热蒸镀法、电子束蒸镀法、磁控溅射法或多弧离子镀膜法等)、沉积法(如物理气相沉积法、原子层沉积法、脉冲激光沉积法等)中的一种或多种。In this embodiment, the preparation method of each layer may be a chemical method or a physical method, wherein the chemical method includes but is not limited to chemical vapor deposition method, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, and co-precipitation method. One or more; physical methods include but are not limited to solution methods (such as spin coating, printing, blade coating, dip-pulling, immersion, spraying, roll coating, casting, slot coating method or strip coating method, etc.), evaporation method (such as thermal evaporation method, electron beam evaporation method, magnetron sputtering method or multi-arc ion coating method, etc.), deposition method (such as physical vapor deposition method, atomic One or more of layer deposition method, pulsed laser deposition method, etc.).
下面通过具体实施例对本发明一种显示器件的制备方法做进一步的解释说明：A preparation method of a display device of the present invention will be further explained below through specific embodiments:
实施例1Example 1
一种显示器件的制备方法，具体步骤如下：A preparation method of a display device, the specific steps are as follows:
01.在基板上溅射间隔分布的ITO/Ag/ITO作为底电极；01. ITO/Ag/ITO with spaced distribution on the substrate is used as the bottom electrode;
02.在相邻底电极之间制备像素点bank，并形成若干个相邻的像素点腔体；02. Prepare a pixel bank between adjacent bottom electrodes, and form several adjacent pixel cavities;
03.在其中一个像素点腔体内打印空穴注入层，空穴注入层材料为MCC，厚度30nm；03. Print a hole injection layer in one of the pixel cavity, the hole injection layer material is MCC, and the thickness is 30nm;
04.在空穴注入层上打印空穴传输层，空穴传输层材料为Nissan，厚度50nm；04. Print the hole transport layer on the hole injection layer, the hole transport layer material is Nissan, the thickness is 50nm;
05.在空穴传输层上打印红光量子点发光层，厚度15nm；05. Print the red quantum dot light-emitting layer on the hole transport layer, with a thickness of 15nm;
06.在红光量子点发光层上打印电子传输层，电子传输层材料为MZO(掺Mg氧化锌)，厚度80nm；06. Print the electron transport layer on the light-emitting layer of the red quantum dots, the material of the electron transport layer is MZO (Mg-doped zinc oxide), and the thickness is 80nm;
07.在电子传输层上溅射Mg:Ag/ITO做第二电极，Mg:Ag厚度30nm，ITO厚度100nm；07. Sputter Mg:Ag/ITO on the electron transport layer as the second electrode, the thickness of Mg:Ag is 30nm, and the thickness of ITO is 100nm;
08.在第二电极上打印空穴注入层，空穴注入层材料为MCC，厚度25nm；08. Print a hole injection layer on the second electrode, the material of the hole injection layer is MCC, and the thickness is 25nm;
09.在空穴注入层上打印空穴传输层，空穴传输层材料为Nissan，厚度60nm；09. Print the hole transport layer on the hole injection layer, the hole transport layer material is Nissan, the thickness is 60nm;
10.在空穴传输层上打印绿光量子点发光层，厚度10nm；10. Print the green quantum dot light-emitting layer on the hole transport layer, with a thickness of 10nm;
11.在绿光量子点发光层上打印电子传输层，电子传输层材料为MZO(掺Mg氧化锌)，厚度40nm；11. Print the electron transport layer on the light-emitting layer of the green quantum dots, the material of the electron transport layer is MZO (Mg-doped zinc oxide), and the thickness is 40nm;
12.在所述电子传输层上溅射IZO做第三电极，IZO厚度100nm。12. Sputtering IZO on the electron transport layer as a third electrode, the thickness of IZO is 100 nm.
13.在另一像素点腔体内(蓝色子像素点单元)上打印空穴注入层，空穴注入层材料为MCC，厚度30nm；13. Print a hole injection layer on another pixel point cavity (blue sub-pixel point unit), the hole injection layer material is MCC, and the thickness is 30nm;
14.在空穴注入层上打印空穴传输层，空穴传输层材料为Nissan，厚度50nm；14. Print the hole transport layer on the hole injection layer, the hole transport layer material is Nissan, and the thickness is 50nm;
15.在空穴传输层上打印蓝色量子点发光层，厚度30nm；15. Print the blue quantum dot light-emitting layer on the hole transport layer with a thickness of 30nm;
16.在蓝色量子点发光层上打印电子传输层，电子传输层材料为MZO(掺Mg氧化锌)，厚度50nm；16. Print the electron transport layer on the blue quantum dot light-emitting layer, the electron transport layer material is MZO (Mg-doped zinc oxide), and the thickness is 50nm;
17.在电子传输层上溅射IZO做第五电极，IZO厚度100nm。17. Sputtering IZO on the electron transport layer to make the fifth electrode, the thickness of IZO is 100nm.
上述实施例中，绿光量子点发光层设置在远离全反射底电极的位置，可以减少其激发红光量子点发光层的比率。由于第二电极是半透明电极，所以绿光透过第二电极到达红光量子点发光层的比例更小，其发出的绿光单色性更高。此外，红光量子点发光层构成微腔结构，所以其红光的出光效率也会越高。本实施例在红绿色子像素点中通过控制施加电压的正负性控制其发出的光的颜色，而且通过强微腔结构、半反射电极和量子点堆叠顺序的设计，极大地减小了两种颜色量子点之间发出的光的相互干扰也提高了出光效率，保证的色彩的纯度和亮度。In the above embodiment, the green quantum dot light-emitting layer is disposed at a position away from the total reflection bottom electrode, which can reduce the ratio of the red light quantum dot light-emitting layer to be excited. Since the second electrode is a semi-transparent electrode, the proportion of green light passing through the second electrode to reach the red light quantum dot light-emitting layer is smaller, and the green light emitted by the second electrode has a higher monochromaticity. In addition, the red light quantum dot light-emitting layer constitutes a microcavity structure, so the light extraction efficiency of red light will be higher. In this embodiment, the color of the light emitted by the red and green sub-pixels is controlled by controlling the positive and negative of the applied voltage, and the design of the strong microcavity structure, the semi-reflective electrode and the stacking sequence of the quantum dots greatly reduces the two The mutual interference of the light emitted between the quantum dots of different colors also improves the light extraction efficiency and ensures the purity and brightness of the colors.
实施例2Example 2
一种显示器件的制备方法，具体步骤如下：A preparation method of a display device, the specific steps are as follows:
01.在基板上溅射间隔分布的ITO作为底电极；01. ITO with spaced distribution on the substrate is used as the bottom electrode;
02.在相邻底电极之间制备像素点bank，并形成若干个相邻的像素点腔体；02. Prepare a pixel bank between adjacent bottom electrodes, and form several adjacent pixel cavities;
03.在其中一个像素点腔体内打印空穴注入层，空穴注入层材料为MCC，厚度30nm；03. Print a hole injection layer in one of the pixel cavity, the hole injection layer material is MCC, and the thickness is 30nm;
04.在空穴注入层上打印空穴传输层，空穴传输层材料为TFB，厚度50nm；04. Print the hole transport layer on the hole injection layer, the hole transport layer material is TFB, and the thickness is 50nm;
05.在空穴传输层上打印红光量子点发光层，厚度15nm；05. Print the red quantum dot light-emitting layer on the hole transport layer, with a thickness of 15nm;
06.在红光量子点发光层上打印电子传输层，电子传输层材料为TiO，厚度80nm；06. Print the electron transport layer on the red quantum dot light-emitting layer, the electron transport layer material is TiO, and the thickness is 80nm;
07.在电子传输层上溅射Ag/ITO做第二电极，Ag厚度30nm，ITO厚度100nm；07. Sputtering Ag/ITO on the electron transport layer as the second electrode, the thickness of Ag is 30nm, and the thickness of ITO is 100nm;
08.在第二电极上打印空穴注入层，空穴注入层材料为MCC，厚度25nm；08. Print a hole injection layer on the second electrode, the material of the hole injection layer is MCC, and the thickness is 25nm;
09.在空穴注入层上打印空穴传输层，空穴传输层材料为TFB，厚度60nm；09. Print the hole transport layer on the hole injection layer, the hole transport layer material is TFB, and the thickness is 60nm;
10.在空穴传输层上打印绿光量子点发光层，厚度10nm；10. Print the green quantum dot light-emitting layer on the hole transport layer with a thickness of 10nm;
11.在绿光量子点发光层上打印电子传输层，电子传输层材料为TiO，厚度40nm；11. Print the electron transport layer on the green quantum dot light-emitting layer, the electron transport layer material is TiO, and the thickness is 40nm;
12.在所述电子传输层上溅射Ag做第三电极，Ag厚度100nm。12. Sputtering Ag on the electron transport layer as a third electrode, the thickness of Ag is 100 nm.
13.在另一像素点腔体内(蓝色子像素点单元)上打印空穴注入层，空穴注入层材料为MCC，厚度30nm；13. Print a hole injection layer on another pixel cavity (blue sub-pixel unit), the material of the hole injection layer is MCC, and the thickness is 30nm;
14.在空穴注入层上打印空穴传输层，空穴传输层材料为TFB，厚度50nm；14. Print the hole transport layer on the hole injection layer, the hole transport layer material is TFB, and the thickness is 50nm;
15.在空穴传输层上打印蓝色量子点发光层，厚度30nm；15. Print the blue quantum dot light-emitting layer on the hole transport layer with a thickness of 30nm;
16.在蓝色量子点发光层上打印电子传输层，电子传输层材料为TiO，厚度50nm；16. Print the electron transport layer on the blue quantum dot light-emitting layer, the material of the electron transport layer is TiO, and the thickness is 50nm;
17.在电子传输层上溅射Ag做第五电极，Ag厚度100nm。17. Sputter Ag on the electron transport layer to make the fifth electrode, the thickness of Ag is 100nm.
综上所述，通过将红光子像素单元和绿光子像素单元整合至一个像素单元中，从而压缩减少了单个像素点结构中子像素点单元的个数(由3个变为2个)，减小了单个像素点结构的面积，进而提高了打印显示器件的分辨率。本发明提供的显示器件不仅具有较高的分辨率，而且简化了驱动电极数量，减少了电路损耗。To sum up, by integrating the red photonic pixel unit and the green photonic pixel unit into one pixel unit, the number of sub-pixel point units in a single pixel point structure is compressed and reduced (from 3 to 2), and the number of sub-pixel units in a single pixel structure is reduced. The area of a single pixel structure is reduced, thereby improving the resolution of the printed display device. The display device provided by the present invention not only has higher resolution, but also simplifies the number of driving electrodes and reduces circuit loss.
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.
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