CN209880662U - Quantum dot light-emitting device and display device - Google Patents
Quantum dot light-emitting device and display device Download PDFInfo
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- CN209880662U CN209880662U CN201920658925.3U CN201920658925U CN209880662U CN 209880662 U CN209880662 U CN 209880662U CN 201920658925 U CN201920658925 U CN 201920658925U CN 209880662 U CN209880662 U CN 209880662U
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Abstract
The utility model discloses a quantum dot luminescence unit, quantum dot luminescent device and display device. This quantum dot luminescence unit include electroluminescent structure and set up in the light conversion layer of electroluminescent structure light-emitting side, this electroluminescent structure is quantum dot luminescence structure, and this quantum dot luminescence structure includes: the LED comprises a first electrode, a first carrier layer, a quantum dot light-emitting layer, a second carrier layer and a second electrode, wherein the first electrode is arranged on the first electrode, the quantum dot light-emitting layer is arranged on the first carrier layer, the second carrier layer is arranged on the quantum dot light-emitting layer, and the second electrode is arranged on the second carrier layer. Utilize among the display device the utility model provides a quantum dot luminescence unit can improve the color purity, guarantees to show the quality.
Description
Technical Field
The application belongs to the technical field of display, and particularly relates to a quantum dot light-emitting unit, a quantum dot light-emitting device and a display device.
Background
In the field of display devices, organic light-emitting diodes adopt organic molecules as light-emitting materials, can realize self-luminescence, do not need a backlight module, and have simple device structures. However, the organic light emitting diode has some defects such as insufficient color purity, non-uniformity of brightness, and the like.
In order to solve the above problems, it is necessary to provide a novel light emitting device, which improves color purity, realizes uniform light emission, and achieves better display effect.
SUMMERY OF THE UTILITY MODEL
In view of the above technical problems, the present application provides a quantum dot light emitting unit, a quantum dot light emitting device and a display apparatus.
According to a first aspect of the present application, a quantum dot light emitting unit is provided, including an electroluminescence structure and a light conversion layer disposed at a light emitting side of the electroluminescence structure, where the electroluminescence structure is a quantum dot light emitting structure, and the quantum dot light emitting structure includes: the LED comprises a first electrode, a first carrier layer, a quantum dot light-emitting layer, a second carrier layer and a second electrode, wherein the first electrode is arranged on the first electrode, the quantum dot light-emitting layer is arranged on the first carrier layer, the second carrier layer is arranged on the quantum dot light-emitting layer, and the second electrode is arranged on the second carrier layer.
Further, the light conversion layer is a quantum dot material.
Further, the first electrode is an anode, the first carrier layer is a hole injection and/or transport layer, the second carrier layer is an electron injection and/or transport layer, and the second electrode is a cathode.
According to another aspect of the present application, there is provided a quantum dot light emitting device including a substrate base and a plurality of pixel units arranged in an array on the substrate base, the pixel units including: at least two sub-pixels, the light emission colors of the sub-pixels are different; and the light conversion layer is arranged on the light emergent side of at least one sub-pixel, wherein the sub-pixel is a quantum dot light-emitting structure.
Further, the light conversion layer is a quantum dot material.
Further, the quantum dot light-emitting structure is a blue light quantum dot light-emitting structure.
Further, the quantum dot light-emitting structure comprises an anode, a hole injection and/or transport layer, an electron injection and/or transport layer and a cathode.
Further, the pixel unit comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel, the blue sub-pixel is a blue light quantum dot light-emitting structure, the red sub-pixel comprises a blue light quantum dot light-emitting structure and a red light quantum dot conversion layer, and the green sub-pixel comprises a blue light quantum dot light-emitting structure and a green light quantum dot conversion layer.
Furthermore, the quantum dot light-emitting device further comprises a filter layer, and the filter layer is arranged on the light emitting side of the light conversion layer.
According to still another aspect of the present application, there is provided a display device including the above quantum dot light emitting device.
Has the advantages that: the utility model provides a quantum dot luminescent device adopts the mode that quantum dot light-emitting structure and quantum dot material combine, has realized high color purity, luminous even color display.
Drawings
Fig. 1 is a schematic diagram of a quantum dot light-emitting unit according to an embodiment of the present application;
FIG. 2 is one of the schematic diagrams of an electroluminescent structure according to one embodiment of the present application;
FIG. 3 is a second schematic diagram of an electroluminescent structure according to an embodiment of the present application;
fig. 4 is one of schematic structural diagrams of a quantum dot light-emitting device according to an embodiment of the present application;
fig. 5 is a second schematic structural view of a quantum dot light-emitting device according to an embodiment of the present application;
fig. 6 is a third schematic structural diagram of a quantum dot light-emitting device according to an embodiment of the present application.
In the drawings like parts are provided with the same reference numerals. The figures show embodiments of the application only schematically.
Detailed Description
The technical solutions in the examples of the present application will be described in detail below with reference to the embodiments of the present application. It should be noted that the described embodiments are only some embodiments of the present application, and not all embodiments.
Referring to fig. 1 and 2, in a specific embodiment, the quantum dot light emitting unit includes an electroluminescent structure and a light conversion layer 30 disposed on a light emitting side of the electroluminescent structure, the electroluminescent structure is a quantum dot light emitting structure 20, and the quantum dot light emitting structure 20 includes: the light-emitting diode comprises a first electrode 201, a first carrier layer 202, a quantum dot light-emitting layer 203, a second carrier layer 204, and a second electrode 205, wherein the first electrode is arranged on the quantum dot light-emitting layer 203, the quantum dot light-emitting layer 203 is arranged between the first carrier layer 202 and the second carrier layer 204.
The light conversion layer 30 is a quantum dot material 310. For example, the electroluminescent structure is a blue quantum dot light emitting structure, and the quantum dot material 310 may be at least one of a red quantum dot or a green quantum dot, and may be excited by light emitted from the quantum dot light emitting structure 20, so as to implement light color conversion.
In a specific embodiment, the first electrode 201 of the qd-light emitting unit is an anode, the first carrier layer 202 is a hole injection and/or transport layer, the second carrier layer 204 is an electron injection and/or transport layer, and the second electrode 205 is a cathode. Referring to fig. 3, in a specific embodiment, the quantum dot light emitting structure 20 includes a first electrode 201, a hole injection layer 2021, a hole transport layer 2022, a quantum dot light emitting layer 203, an electron transport layer 204, and a second electrode 205. In addition to the functional layers, the light emitting structure may further include other functional layers such as an electron blocking layer, an intermediate insulating layer, and the like, which is not limited herein.
Referring to fig. 4, in a specific embodiment, a quantum dot light emitting device includes a substrate 10 and a plurality of pixel units arranged on the substrate 10 in an array, where the pixel units include: at least two sub-pixels, the light emission colors of the sub-pixels are different; and the light conversion layer 30 is arranged on the light emitting side of at least one sub-pixel, wherein the sub-pixel is a quantum dot light emitting structure 20. The light conversion layer 30 in the quantum dot light emitting device is a quantum dot material 310.
In order to ensure the color purity of the quantum dot light emitting device, a filter layer 40 is further disposed on the light emitting side of the light conversion layer 30. The filter layer 40 only allows the corresponding color of the sub-pixel to pass through, and can filter out other stray light, thereby improving the light emitting purity of the corresponding sub-pixel.
In a specific embodiment, the quantum dot light emitting structure 20 is a blue quantum dot light emitting structure. The blue quantum dot light emitting structure of each sub-pixel can be controlled individually to realize independent driving, and the light emitting structure 20 emits blue light when driven, and the blue light can excite the light conversion layer 30 at the light emitting side.
In a specific embodiment, the quantum dot light emitting structure 20 of the quantum dot light emitting device includes a first electrode 201, a first carrier layer 202, a quantum dot light emitting layer 203, a second carrier layer 204, and a second electrode 205. The first electrode 201 is an anode, the first carrier layer 202 is a hole injection and/or transport layer, the second carrier layer 204 is an electron injection and/or transport layer, and the second electrode 205 is a cathode.
Referring to fig. 5, in a specific embodiment, a pixel unit includes a red sub-pixel, a green sub-pixel and a blue sub-pixel, the blue sub-pixel is a blue quantum dot light emitting structure, the red sub-pixel includes a blue quantum dot light emitting structure and a red quantum dot conversion layer 31, and the green sub-pixel includes a blue quantum dot light emitting structure and a green quantum dot conversion layer 32.
The red quantum dot conversion layer 31 is a red quantum dot material 311, and the red quantum dot 311 emits red light (R) after being excited by blue light to form a red sub-pixel; the green quantum dot conversion layer 32 is a green quantum dot material 312, and the green quantum dots 312 emit green light (G) after being excited by blue light to form a green sub-pixel; the sub-pixel without the light conversion layer directly emits blue light (B), forming a blue sub-pixel. The light-emitting side of the red quantum dot conversion layer 31 is provided with a filter layer 41 which only allows red light to pass through; the light-emitting side of the green quantum dot conversion layer 32 is provided with the filter layer 42, which only allows green light to pass through, thereby improving the light-emitting purity of the corresponding sub-pixels. A pixel unit is formed by red, green and blue sub-pixels, and color display with high color purity is realized.
Referring to fig. 6, in a specific embodiment, adjacent sub-pixels of the qd-led device are not in contact with each other and are separated by a black matrix 50, so as to avoid the mutual influence of the luminescent colors between the adjacent sub-pixels and ensure the light purity.
In a specific embodiment, the first electrode 201 may be an anode, the second electrode 205 may be a cathode, and the quantum dot light emitting structure 20 emits light from the top. The light emitted from the quantum dot light-emitting structure 20 is emitted from the second electrode 205 sideThe second electrode 205 is preferably made of a transparent conductive material, which is beneficial to ensuring the brightness of the emitted light. The electrode material is selected from glass/Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), Indium Zinc Oxide (IZO), aluminum-doped zinc oxide (AZO), antimony-doped zinc oxide (ATO), gallium-doped zinc oxide, cadmium-doped zinc oxide, copper indium oxide (ICO), and tin oxide (SnO)2) Zirconium oxide (ZrO)2) One or more of aluminum (Al), calcium (Ca), barium (Ba), silver (Ag), etc., but is not limited thereto.
In a specific embodiment, the blue quantum dots in the quantum dot light emitting structure 20 may be at least one of group II-VIA compounds, group IV-VIA compounds, group III-VA compounds, and group I-VIA compounds. Preferably, at least one of CdS, CdSe, CdSeS, CdSZnSeS, CdS/ZnS, CdSe/CdS/ZnS, or ZnSe/ZnS, but not limited thereto.
In a specific embodiment, the electron transport layer material is selected from ZnO, TiO2、SnO2、Ta2O3、 InSnO、Alq3、Ca、Ba、CsF、LiF、CsCO3But is not limited thereto. Preferably, the electron transport layer material is metal doped ZnO nanoparticles, such as Mg, Al, Li, W, Ti, Ni, Sn, MgO, Al2O3、Li2O、W2O3、TiO2、NiO、SnO2Etc. doped ZnO nanoparticles.
In a specific embodiment, the hole transport layer material is selected from poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), Polyvinylcarbazole (PVK), poly (N, N ' bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine) (poly-TPD), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4',4 ″ -tris (carbazol-9-yl) aniline (TCTA), 4' -bis (9-Carbazol) Biphenyl (CBP), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1' -biphenyl-4, 4' -diamine (TPD), N ' -diphenyl-N, N ' (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine (NPB), and the like, but is not limited thereto.
In a specific embodiment, the hole injection layer material is selected from poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT: PS)S), copper phthalocyanine (CuPc), 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinone-dimethane (F4-TCNQ), 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-Hexaazatriphenylene (HATCN), Polythienothiophene (PTT) doped with poly (perfluoroethylene-perfluoroether sulfonic acid) (PFFSA), MoO3、VO2、 WO3、CrO3、CuO、MoS2、MoSe2、WS2、WSe2One or more of, but not limited to, CuS, and the like.
The application also provides a display device which comprises the quantum dot light-emitting device. The pixel unit of the display device is provided with a plurality of sub-pixels, each sub-pixel comprises a quantum dot light-emitting structure, and a light conversion layer is arranged on the light emitting side of the quantum dot light-emitting structure of at least one sub-pixel. The quantum dot material of the light conversion layer can be excited by blue light emitted by the blue quantum dot light-emitting structure to emit corresponding monochromatic light, so that high-color-purity and uniform-light-emitting color display is realized.
Although the present disclosure has been described and illustrated in greater detail by the inventors, it should be understood that modifications and/or alterations to the above-described embodiments, or equivalent substitutions, will be apparent to those skilled in the art without departing from the spirit of the disclosure, and that no limitations to the present disclosure are intended or should be inferred therefrom.
Claims (7)
1. A quantum dot light-emitting device comprises a substrate base plate and a plurality of pixel units arranged on the substrate base plate in an array mode, wherein each pixel unit comprises:
at least two sub-pixels, the light emission colors of the sub-pixels are different;
a light conversion layer disposed on a light emitting side of the at least one sub-pixel,
the sub-pixels are quantum dot light-emitting structures.
2. The quantum dot light-emitting device according to claim 1, wherein the light conversion layer is a quantum dot material.
3. The quantum dot light-emitting device according to claim 1, wherein the quantum dot light-emitting structure is a blue quantum dot light-emitting structure.
4. The quantum dot light-emitting device of claim 1, wherein the quantum dot light-emitting structure comprises
An anode, a hole injection and/or transport layer, an electron injection and/or transport layer, a cathode.
5. The quantum dot light-emitting device according to claim 1, wherein the pixel unit comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel, the blue sub-pixel is a blue quantum dot light-emitting structure, the red sub-pixel comprises a blue quantum dot light-emitting structure and a red quantum dot conversion layer, and the green sub-pixel comprises a blue quantum dot light-emitting structure and a green quantum dot conversion layer.
6. The QDs device of any of claims 1-5, further comprising a filter layer disposed on the light output side of the light conversion layer.
7. A display device comprising the quantum dot light-emitting device according to any one of claims 1 to 6.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921830546.4U CN210429885U (en) | 2019-05-09 | 2019-05-09 | Quantum dot light-emitting unit |
| CN201920658925.3U CN209880662U (en) | 2019-05-09 | 2019-05-09 | Quantum dot light-emitting device and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920658925.3U CN209880662U (en) | 2019-05-09 | 2019-05-09 | Quantum dot light-emitting device and display device |
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| CN201921830546.4U Division CN210429885U (en) | 2019-05-09 | 2019-05-09 | Quantum dot light-emitting unit |
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| CN209880662U true CN209880662U (en) | 2019-12-31 |
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| CN201920658925.3U Active CN209880662U (en) | 2019-05-09 | 2019-05-09 | Quantum dot light-emitting device and display device |
| CN201921830546.4U Active CN210429885U (en) | 2019-05-09 | 2019-05-09 | Quantum dot light-emitting unit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148675A (en) * | 2019-05-09 | 2019-08-20 | 苏州星烁纳米科技有限公司 | Quantum dot light emitting unit, quantum dot light emitting device and display device |
| CN114122217A (en) * | 2022-01-25 | 2022-03-01 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
-
2019
- 2019-05-09 CN CN201920658925.3U patent/CN209880662U/en active Active
- 2019-05-09 CN CN201921830546.4U patent/CN210429885U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148675A (en) * | 2019-05-09 | 2019-08-20 | 苏州星烁纳米科技有限公司 | Quantum dot light emitting unit, quantum dot light emitting device and display device |
| CN114122217A (en) * | 2022-01-25 | 2022-03-01 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
Also Published As
| Publication number | Publication date |
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| CN210429885U (en) | 2020-04-28 |
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