CN209785977U

CN209785977U - Quantum dot light emitting device and lighting device

Info

Publication number: CN209785977U
Application number: CN201920661776.6U
Authority: CN
Inventors: 王允军
Original assignee: Suzhou Xingshuo Nanotech Co Ltd
Current assignee: Suzhou Xingshuo Nanotech Co Ltd
Priority date: 2019-05-09
Filing date: 2019-05-09
Publication date: 2019-12-13
Anticipated expiration: 2029-05-09

Abstract

The utility model provides a quantum dot luminescent device and lighting device. The quantum dot light emitting device includes: a substrate base plate; the quantum dot light-emitting structure is arranged on the substrate base plate; and the light conversion layer is arranged on the light emitting side of the quantum dot light emitting structure, wherein the light conversion layer is a quantum dot material. The quantum dot material in the light conversion layer can be excited by light emitted by the quantum dot light-emitting structure to emit light with corresponding colors, and the light is mixed with the light emitted by the quantum dot light-emitting structure to form white light, so that stable light emission of a high color gamut is realized, and the illumination quality is improved.

Description

Quantum dot light emitting device and lighting device

Technical Field

The application belongs to the technical field of illumination, concretely relates to quantum dot light emitting device and lighting device.

Background

In the field of lighting devices, organic light emitting diodes adopt organic molecules as light emitting materials, self-luminescence can be realized, a backlight module is not needed, and the device is simple in structure. However, the organic light emitting diode has some defects such as a low color gamut, and the like.

in order to solve the above problems, it is necessary to provide a novel light emitting device to improve the color gamut and achieve better illumination effect.

SUMMERY OF THE UTILITY MODEL

To solve the technical problem, the application provides a quantum dot light-emitting device and a lighting device.

According to a first aspect of the present application, there is provided a quantum dot light emitting device comprising: a substrate base plate; the quantum dot light-emitting structure is arranged on the substrate base plate; and the light conversion layer is arranged on the light emitting side of the quantum dot light emitting structure, wherein the light conversion layer is a quantum dot material.

Further, the quantum dot light-emitting structure is a blue light quantum dot light-emitting structure.

Further, the quantum dot material comprises blended red light quantum dots and green light quantum dots, and the quantum dot material is excited by the blue light quantum dot light-emitting structure and is compounded to generate white light.

Further, the quantum dot material comprises blended red light quantum dots, orange light quantum dots, yellow light quantum dots, green light quantum dots, cyan light quantum dots, purple light quantum dots or indigo light quantum dots, and the quantum dot material is excited by the blue light quantum dot light-emitting structure and is compounded to generate white light.

Further, the quantum dot light-emitting structure is a red quantum dot light-emitting structure.

Further, the quantum dot material comprises blended blue light quantum dots and green light quantum dots, and the quantum dot material is excited by the red light quantum dot light-emitting structure and is compounded to generate white light.

Further, the quantum dot light-emitting structure is a green light quantum dot light-emitting structure. The quantum dot material comprises blended blue light quantum dots and red light quantum dots, and the quantum dot material is excited by the green light quantum dot light-emitting structure and is compounded to generate white light.

Further, the quantum dot light-emitting structure comprises an anode, a hole injection and/or transport layer, an electron injection and/or transport layer and a cathode.

Furthermore, the quantum dot light-emitting device further comprises a packaging layer, and the packaging layer is arranged on the light emitting side of the light conversion layer.

According to still another aspect of the present application, there is provided a lighting device including the above quantum dot light emitting device.

Has the advantages that: the utility model provides a mode that quantum dot luminescent device adopted quantum dot light emitting structure and quantum dot material to combine, and the light that the quantum dot material can be sent by quantum dot light emitting structure arouses, forms white light after the light that sends and the light that the quantum dot light emitting structure sent mix to realize the stable of high colour gamut and give out light, improved the illumination quality.

drawings

Fig. 1 is a schematic structural diagram of a quantum dot light-emitting device according to an embodiment of the present application;

Fig. 2 is one of schematic diagrams of a quantum dot light emitting structure according to an embodiment of the present application;

Fig. 3 is a second schematic diagram of a quantum dot light emitting structure according to an embodiment of the present application.

In the drawings like parts are provided with the same reference numerals. The figures show embodiments of the application only schematically.

Detailed Description

The technical solutions in the examples of the present application will be described in detail below with reference to the embodiments of the present application. It should be noted that the described embodiments are only some embodiments of the present application, and not all embodiments.

Referring to fig. 1, in a specific embodiment, a quantum dot light emitting device includes: a base substrate 10; the quantum dot light-emitting structure 20 is arranged on the substrate base plate 10; and a light conversion layer 30 disposed on the light emitting side of the quantum dot light emitting structure 20, wherein the light conversion layer 30 is a quantum dot material 310. The quantum dot material 310 may be excited by light emitted from the quantum dot light emitting structure 20, thereby realizing conversion of light color.

In a specific embodiment, the quantum dot light emitting structure 20 is a blue quantum dot light emitting structure. The light emitting structure 20 emits blue light when driven, which may excite the light conversion layer 30 at the light emitting side. The quantum dot material 310 in the light conversion layer 30 includes blended red light quantum dots and green light quantum dots, and the quantum dot material is excited by the blue light quantum dot light emitting structure and can be combined with light emitted by the blue light quantum dot light emitting structure to generate white light.

In a specific embodiment, the quantum dot light emitting structure 20 is a blue quantum dot light emitting structure. The light emitting structure 20 emits blue light when driven, which may excite the light conversion layer 30 at the light emitting side. The quantum dot material 310 in the light conversion layer 30 includes blended red light quantum dots, or orange light quantum dots, or yellow light quantum dots, or green light quantum dots, or cyan light quantum dots, or violet light quantum dots, or indigo light quantum dots. These light conversion materials can be excited by the blue quantum dot light emitting structure to be combined with light emitted by the quantum dot light emitting structure 20 to generate white light, thereby realizing white light illumination with high color gamut.

In a specific embodiment, the quantum dot light emitting structure 20 is a red quantum dot light emitting structure. The light emitting structure 20 emits red light when driven, which may excite the light conversion layer 30 at the light emitting side. The quantum dot material 310 in the light conversion layer 30 includes blended blue light quantum dots and green light quantum dots, and the quantum dot material can be excited by the red light quantum dot light emitting structure to generate up-conversion light emission, so that the up-conversion light emission is combined with light emitted by the red light quantum dot light emitting structure to generate white light.

In a specific embodiment, the quantum dot light emitting structure 20 is a green quantum dot light emitting structure. The light emitting structure 20 emits red light when driven, which may excite the light conversion layer 30 at the light emitting side. The quantum dot material 310 in the light conversion layer 30 includes blended blue light quantum dots and red light quantum dots, wherein the blue light quantum dot material can be excited by the green light quantum dot light-emitting structure to generate up-conversion luminescence, and the red light quantum dot material can be excited by the green light quantum dot light-emitting structure to generate down-conversion luminescence, so that the red light quantum dot material and the light emitted by the green light quantum dot light-emitting structure are combined to generate white light.

In order to reduce the adverse effect of water and oxygen in the external environment on the light emitting device, an encapsulation layer 40 is further disposed on the light emitting side of the light conversion layer 30 to protect the quantum dot material in the device.

referring to fig. 2, in a specific embodiment, the quantum dot light emitting structure 20 includes: the anode 201, the first charge carrier layer 202, the quantum dot light emitting layer 203, the second charge carrier layer 204, and the cathode 205 are disposed between the first charge carrier layer 202 and the second charge carrier layer 204.

In a specific embodiment, first charge carrier layer 202 is a hole injection and/or transport layer and second charge carrier layer 204 is an electron injection and/or transport layer. Referring to fig. 3, in a specific embodiment, the quantum dot light emitting structure 20 includes an anode 201, a hole injection layer 2021, a hole transport layer 2022, a quantum dot light emitting layer 203, an electron transport layer 204, and a cathode 205. In addition to the functional layers, the light emitting structure may further include other functional layers such as an electron blocking layer, an intermediate insulating layer, and the like, which is not limited herein.

In a specific embodiment, the quantum dot light emitting structure 20 is top-emitting. The light emitted by the quantum dot light-emitting structure 20 is emitted from one side of the second electrode 205, and the second electrode 205 is preferably made of a transparent conductive material, which is beneficial to ensuring the brightness of the emitted light. The electrode material is selected from glass/Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), Indium Zinc Oxide (IZO), aluminum-doped zinc oxide (AZO), antimony-doped zinc oxide (ATO), gallium-doped zinc oxide, cadmium-doped zinc oxide, copper indium oxide (ICO), and tin oxide (SnO)₂) Zirconium oxide (ZrO)₂) One or more of aluminum (Al), calcium (Ca), barium (Ba), silver (Ag), etc., but is not limited thereto.

In a specific embodiment, the electron transport layer material is selected from ZnO, TiO₂、SnO₂、Ta₂O₃、InSnO、Alq₃、Ca、Ba、CsF、LiF、CsCO₃But is not limited thereto. Preferably, the electron transport layer material is metal doped ZnO nanoparticles, such as Mg, Al, Li, W, Ti, Ni, Sn, MgO, Al₂O₃、Li₂O、W₂O₃、TiO₂、NiO、SnO₂Etc. doped ZnO nanoparticles.

In a specific embodiment, the hole transport layer material is selected from poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), Polyvinylcarbazole (PVK), poly (N, N ' bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine) (poly-TPD), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4',4 ″ -tris (carbazol-9-yl) aniline (TCTA), 4' -bis (9-Carbazol) Biphenyl (CBP), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1' -biphenyl-4, 4' -diamine (TPD), N ' -diphenyl-N, N ' (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine (NPB), and the like, but is not limited thereto.

In a specific embodiment, the hole injection layer material is selected from poly (3, 4-ethylenedioxythiophene) -polystyrenesulfonic acid (PEDOT: PSS), copper phthalocyanine (CuPc), 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane (F4-TCNQ), 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-Hexaazatriphenylene (HATCN), Polythienothiophene (PTT) doped with poly (perfluoroethylene-perfluoroether sulfonic acid) (PFFSA), MoO₃、VO₂、WO₃、CrO₃、CuO、MoS₂、MoSe₂、WS₂、WSe₂One or more of, but not limited to, CuS, and the like.

The application also provides a lighting device, which comprises the quantum dot light-emitting device provided by the application. The lighting device comprises a quantum dot light-emitting structure and a light conversion layer on the light-emitting side of the quantum dot light-emitting structure. The quantum dot material in the light conversion layer can be excited by the light emitted by the quantum dot light emitting structure to emit corresponding light, and white light illumination with high color gamut and stable light emission is realized after the light is mixed with the light emitted by the quantum dot light emitting structure.

Although the present disclosure has been described and illustrated in greater detail by the inventors, it should be understood that modifications and/or alterations to the above-described embodiments, or equivalent substitutions, will be apparent to those skilled in the art without departing from the spirit of the disclosure, and that no limitations to the present disclosure are intended or should be inferred therefrom.

Claims

1. A quantum dot light emitting device, comprising:

A substrate base plate;

The quantum dot light-emitting structure is arranged on the substrate base plate;

And the light conversion layer is arranged on the light emitting side of the quantum dot light emitting structure, wherein the light conversion layer is a quantum dot material.

2. The quantum dot light-emitting device according to claim 1, wherein the quantum dot light-emitting structure is a blue quantum dot light-emitting structure.

3. The qd-led device of claim 2, wherein the qd material comprises blended red and green qds, and the qd material is excited by the blue qds to recombine to produce white light.

4. the quantum dot light emitting device of claim 2, wherein the quantum dot material comprises blended red light quantum dots, or orange light quantum dots, or yellow light quantum dots, or green light quantum dots, or cyan light quantum dots, or violet light quantum dots, or indigo light quantum dots, and the quantum dot material is excited by the blue light quantum dot light emitting structure and recombines to produce white light.

5. The quantum dot light-emitting device according to claim 1, wherein the quantum dot light-emitting structure is a red quantum dot light-emitting structure.

6. The quantum dot light-emitting device according to claim 5, wherein the quantum dot material comprises blended blue and green quantum dots, the quantum dot material being excited by the red quantum dot light-emitting structure to recombine to produce white light.

7. The quantum dot light-emitting device of claim 1, wherein the quantum dot light-emitting structure is a green light quantum dot light-emitting structure, and wherein the quantum dot material comprises blended blue and red light quantum dots, and wherein the quantum dot material is excited by the green light quantum dot light-emitting structure and recombines to produce white light.

8. The quantum dot light-emitting device of claim 1, wherein the quantum dot light-emitting structure comprises

An anode, a hole injection and/or transport layer, an electron injection and/or transport layer, a cathode.

9. The quantum dot light-emitting device according to any one of claims 1 to 8, further comprising an encapsulation layer disposed on the light-emitting side of the light conversion layer.

10. A lighting device comprising the quantum dot light-emitting device according to any one of claims 1 to 9.