CN208078027U - A kind of inverted structure near infrared photodetector based on novel electron transport layer - Google Patents
A kind of inverted structure near infrared photodetector based on novel electron transport layer Download PDFInfo
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- CN208078027U CN208078027U CN201820259419.2U CN201820259419U CN208078027U CN 208078027 U CN208078027 U CN 208078027U CN 201820259419 U CN201820259419 U CN 201820259419U CN 208078027 U CN208078027 U CN 208078027U
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- electron transfer
- near infrared
- electron
- transfer layer
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- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 48
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical group C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 2
- 230000005525 hole transport Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model belongs to technical field of photoelectric detection, specially a kind of inverted structure near infrared photodetector based on novel electron transport layer, including electrically conducting transparent basal layer, it is characterised in that：It is provided with novel electron transport layer on the electrically conducting transparent basal layer, the novel electron transport layer is three-layer composite structure, including the first electron transfer layer, second electron transfer layer and third electron transfer layer, first electron transfer layer is ZnO, first electron-transport layer thickness is 50 nm, second electron transfer layer is arranged on the first electron transfer layer, second electron transfer layer is Al, the thickness of second electron transfer layer is 0.5 nm, the third electron transfer layer is arranged on the second electron transfer layer, third electron transfer layer is TPBI, the thickness of third electron transfer layer is 6 nm, it is provided near infrared light photosensitive layer in the novel electron transport layer, near infrared light photosensitive layer is double-layer structure, including the first auxiliary photosensitive layer stacked gradually and the second photosensitive layer.
Description
Technical field
The utility model belongs to technical field of photoelectric detection, specially a kind of inverted structure based on novel electron transport layer
Near infrared photodetector.
Background technology
Optical detector is a kind of novel Detection Techniques, and near infrared light detection is widely used in environmental monitoring, astronomy, state
The fields such as anti-military and horizon communication.For optical detector used at present mainly based on photodiode, volume is larger, work
Voltage is high, and equipment is expensive.Due to having flexible, cheap and many merits such as being easily integrated, it is being consumed organic photodetector
Electronic product, household appliance, Intelligent building lighting, industry, production safety, health care and life science, environment, toy and
The fields such as education will be widely used.
The detectivity of traditional organic near infrared photodetector is low, light absorption of the special organic material near infrared range
Difference, the good organic material of near infrared absorption are less.On the other hand, organic near infrared photodetector of traditional forward structure
Lifetime stability it is poor, life problems can partly be solved using inverted structure, but need to design good electron transfer layer,
To reduce the work function of electrode, promote the collection of electronics.
It to be solved so providing a kind of inverted structure near infrared photodetector based on novel electron transport layer and becoming us
Certainly the problem of.
Utility model content
The purpose of this utility model is to provide a kind of inverted structure near infrared light electrical resistivity survey based on novel electron transport layer
Device is surveyed, to solve the problems mentioned in the above background technology.
To achieve the above object, the utility model provides the following technical solutions：
A kind of inverted structure near infrared photodetector based on novel electron transport layer, including electrically conducting transparent basal layer,
Novel electron transport layer is provided on the electrically conducting transparent basal layer, the novel electron transport layer is three-layer composite structure,
Including the first electron transfer layer, the second electron transfer layer and third electron transfer layer, the first electron transfer layer are ZnO, the first electricity
Son transmission layer thickness is 50 nm, and second electron transfer layer is arranged on the first electron transfer layer, the second electron-transport
Layer is Al, and the thickness of the second electron transfer layer is 0.5 nm, and the third electron transfer layer is arranged in the second electron transfer layer
On, third electron transfer layer is TPBI, and the thickness of third electron transfer layer is 6 nm, is set in the novel electron transport layer
It is equipped near infrared light photosensitive layer, near infrared light photosensitive layer is double-layer structure, including the first auxiliary photosensitive layer stacked gradually and the second light
Photosensitive layer, the described first auxiliary photosensitive layer are C60, and the thickness of the first auxiliary photosensitive layer is 15 nm, and second photosensitive layer is set
It is placed on the first auxiliary photosensitive layer, the second photosensitive layer is PbPc, and the second photosensitive layer thickness is 50 nm, the near infrared light
It is provided with hole transmission layer in photosensitive layer, reflection electrode layer is provided on the hole transmission layer.
Preferably, the electrically conducting transparent basal layer is FTO electro-conductive glass, FTO electro-conductive glass square resistances are less than
10 ohm, electrically conducting transparent basal layer is more than 80% in the transmitance of the near infrared light of 900 nm.
Preferably, the hole transmission layer is double-layer structure, including the CuI and 5 nm of 2 nm stacked gradually
MoO3。
Preferably, the reflection electrode layer is Ag, the thickness of reflection electrode layer is 200 nm.
Compared with prior art, the utility model has the beneficial effects that：The utility model uses the bis- photosensitive layers of PbPc and C60
On the one hand structure, the C60 layers of substrate as PbPc can promote PbPc in the absorption of near infrared band, on the other hand be conducive to light
Raw exciton is in the decomposition at the interfaces PbPc and C60, the final detectivity for improving detector.The ZnO of 50 nm of the utility model, 0.5
For the TPBI of the Al of nm and 6 nm as compound novel electron transport layer, ZnO can reduce the work function of transparent electrode, improve device
The Al of the built in field of part, 0.5 nm can make near infrared light scatter, absorption of the promotion photosensitive layer near infrared light, 6
The TPBI of nm can play the role of preventing light-generated excitons from quenching on Al, and comprehensive by compound novel electron transport layer makees
With finally greatly improving detectivity of the detector near infrared light.
Description of the drawings
Fig. 1 is the utility model overall structure diagram；
Fig. 2 is electron-transport schematic diagram of a layer structure in the utility model；
Fig. 3 is near infrared light photosensitive layer structural schematic diagram in the utility model.
In figure：1- electrically conducting transparent basal layers, 2- novel electron transport layers, 3- near infrared light photosensitive layer, 4- hole transmission layers, 5-
Reflection electrode layer, the first electron transfer layers of 201-, the second electron transfer layers of 202-, 203- third electron transfer layers, 301-
First auxiliary photosensitive layer, the second photosensitive layers of 302-.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be understood that term "upper", "lower", "front", "rear", "left", "right",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
The utility model and simplifying describes for ease of description, do not indicate or imply the indicated device or element must have it is specific
Orientation, with specific azimuth configuration and operation, therefore should not be understood as limiting the present invention.
- 3 are please referred to Fig.1, the utility model provides a kind of technical solution：A kind of inversion knot based on novel electron transport layer
Structure near infrared photodetector, including electrically conducting transparent basal layer are provided with novel electron transport layer 2 on electrically conducting transparent basal layer 1,
Novel electron transport layer 2 is three-layer composite structure, including the first electron transfer layer 201, and the second electron transfer layer 202 and third are electric
Sub- transport layer 203, the first electron transfer layer 201 are ZnO, and 201 thickness of the first electron transfer layer is 50 nm, the second electron-transport
Layer 202 is arranged on the first electron transfer layer 201, and the second electron transfer layer 202 is Al, the thickness of the second electron transfer layer 202
Degree is 0.5 nm, and third electron transfer layer 203 is arranged on the second electron transfer layer 202, and third electron transfer layer 203 is
The thickness of TPBI, third electron transfer layer 203 are 6 nm, and near infrared light photosensitive layer 3 is provided in novel electron transport layer 2, close red
Outer photosensitive layer 3 is double-layer structure, including the first auxiliary photosensitive layer 301 stacked gradually and the second photosensitive layer 302, the first fill-in light
Photosensitive layer 301 is C60, and the thickness of the first auxiliary photosensitive layer 301 is 15 nm, and the second photosensitive layer 302 is set to the first auxiliary photosensitive layer
On 301, the second photosensitive layer 302 is PbPc, and 302 thickness of the second photosensitive layer is 50 nm, is arranged near infrared light photosensitive layer 3 free
Cave transport layer 4 is provided with reflection electrode layer 5 on the hole transmission layer 4；Further, electrically conducting transparent basal layer 1 is led for FTO
Electric glass, FTO electro-conductive glass square resistances are less than 10 ohm, transmission of the electrically conducting transparent basal layer 1 in the near infrared light of 900 nm
Rate is more than 80%；Further, hole transmission layer 4 is double-layer structure, includes the MoO3 of the CuI and 5 nm of 2 nm stacked gradually；
Further, reflection electrode layer 5 is Ag, and the thickness of reflection electrode layer 5 is 200 nm.
Operation principle：Near infrared light is injected from 1 side of electrically conducting transparent basal layer inside detector, and the second photosensitive layer is reached
302, it is absorbed by the second photosensitive layer 302, forms light-generated excitons in the second photosensitive layer 302, light-generated excitons are in concentration gradient difference
The interface that C60 first assists photosensitive layer 301 and the second photosensitive layers of PbPc 302 is diffused under effect, on a left side for interface energy level difference
Bottom right, light-generated excitons dissociate, and form electrons and holes, electrons and holes are in device built in field or the work of extra electric field
Under, respectively to cathode and anode movement, and is collected by cathode and anode, form optical detection electric current, pass through the big of probe current
It is small, the intensity of light can be obtained, to realize detection.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is appreciated that can these embodiments be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (4)
1. a kind of inverted structure near infrared photodetector based on novel electron transport layer, including electrically conducting transparent basal layer (1),
It is characterized in that：It is provided with novel electron transport layer on the electrically conducting transparent basal layer (1)（2）, the described novel electron transmission
Layer（2）For three-layer composite structure, including the first electron transfer layer（201）, the second electron transfer layer（202）With third electron-transport
Layer（203）, the first electron transfer layer（201）For ZnO, the first electron transfer layer（201）Thickness is 50 nm, the described second electricity
Sub- transport layer（202）It is arranged in the first electron transfer layer（201）On, the second electron transfer layer（202）For Al, the second electronics passes
Defeated layer（202）Thickness be 0.5 nm, the third electron transfer layer（203）It is arranged in the second electron transfer layer（202）It
On, third electron transfer layer（203）For TPBI, third electron transfer layer（203）Thickness be 6 nm, the novel electron pass
Defeated layer（2）On be provided near infrared light photosensitive layer（3）, near infrared light photosensitive layer（3）It is auxiliary for double-layer structure, including first stacked gradually
Help photosensitive layer（301）With the second photosensitive layer（302）, the described first auxiliary photosensitive layer（301）For C60, the first auxiliary photosensitive layer
（301）Thickness be 15 nm, second photosensitive layer（302）It is set to the first auxiliary photosensitive layer（301）On, the second light
Photosensitive layer（302）For PbPc, the second photosensitive layer（302）Thickness is 50 nm, the near infrared light photosensitive layer（3）On be provided with hole
Transport layer（4）, the hole transmission layer（4）On be provided with reflection electrode layer（5）.
2. a kind of inverted structure near infrared photodetector based on novel electron transport layer according to claim 1,
It is characterized in that：The electrically conducting transparent basal layer (1) is FTO electro-conductive glass, and FTO electro-conductive glass square resistances are less than 10 ohm,
Electrically conducting transparent basal layer (1) is more than 80% in the transmitance of the near infrared light of 900 nm.
3. a kind of inverted structure near infrared photodetector based on novel electron transport layer according to claim 1,
It is characterized in that：The hole transmission layer（4）For double-layer structure, including the MoO3 of the CuI and 5 nm of 2 nm that stacks gradually.
4. a kind of inverted structure near infrared photodetector based on novel electron transport layer according to claim 1,
It is characterized in that：The reflection electrode layer（5）For Ag, reflection electrode layer（5）Thickness be 200 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820259419.2U CN208078027U (en) | 2018-02-15 | 2018-02-15 | A kind of inverted structure near infrared photodetector based on novel electron transport layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820259419.2U CN208078027U (en) | 2018-02-15 | 2018-02-15 | A kind of inverted structure near infrared photodetector based on novel electron transport layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208078027U true CN208078027U (en) | 2018-11-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820259419.2U Expired - Fee Related CN208078027U (en) | 2018-02-15 | 2018-02-15 | A kind of inverted structure near infrared photodetector based on novel electron transport layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208078027U (en) |
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2018
- 2018-02-15 CN CN201820259419.2U patent/CN208078027U/en not_active Expired - Fee Related
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181109 |