CN103839687B - A kind of lamination dye-sensitized solar cells - Google Patents
A kind of lamination dye-sensitized solar cells Download PDFInfo
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- CN103839687B CN103839687B CN201310485908.1A CN201310485908A CN103839687B CN 103839687 B CN103839687 B CN 103839687B CN 201310485908 A CN201310485908 A CN 201310485908A CN 103839687 B CN103839687 B CN 103839687B
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- dye
- solar cells
- sensitized solar
- lamination
- photocathode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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Abstract
The invention discloses a kind of lamination dye-sensitized solar cells, the lamination dye-sensitized solar cells include electrically conducting transparent substrate, dye sensitization or quantum dot sensitized light anode, the electrolyte using polymeric material as the polymer complex structure photocathode of light active material and between light anode and photocathode.The present invention can effectively improve the solar spectrum utilization rate of dye-sensitized solar cells using polymer complex structure photocathode.Laid a good foundation to develop high-performance overlapped dye-sensitized solar cells later.
Description
Technical field
The invention belongs to solar cell field, and in particular to a kind of dye-sensitized solar cells.
Background technology
The dye sensitization sun（DSC）Battery is because with cheap, preparation process is simple, the features such as environment-friendly, being subject to
The extensive concern of all circles.Dye-sensitized solar cells achieve great development in the past few decades.Current dye sensitization
The photoelectric transformation efficiency of solar cell has broken through 12%, can be compared favourably with non-crystalline silicon level solar cell.It is new based on perovskite
The sensitized cells photoelectric transformation efficiency of structure has reached 15%.
Used as the third generation solar cell technology, how to improve its photoelectric transformation efficiency turns into research to dye-sensitized solar cells
Focus, the photoelectric transformation efficiency limit is 31% in theory for traditional N-shaped single-unit dye-sensitized solar cells.Using sensitization time
Pole substitutes can be brought up into lamination dye-sensitized solar cells theoretical limit photoelectric transformation efficiency to a system of solutions in routine n-DSC
43%.But photocathode solar cell（p-DSC）Low photoelectric transformation efficiency governs the hair of lamination dye-sensitized solar cells
Exhibition.
The research of current p-DSC is concentrated mainly on organic dye sensitized p-type oxide porous membrane.It is applied to p-DSC
In semiconductive thin film mainly have NiO, CuGaO2, the p-type semiconductor material such as CuSCN.Up to the present cell photoelectric conversion effect
The electrode of rate most preferably NiO semi-conducting materials, also obtain widest research.But there is NiO materials certain light to inhale
Receive and cavity transmission ability is relatively low seriously constrains its application in p-DSC.P-type CuGaO2Semiconductive thin film is compared due to it
NiO lower valence band location obtains open-circuit voltage higher.It is generally with the dyestuff in the different p-DSC of ruthenium dye often from n-DSC
D- π-A structure organic dyestuff.Current p-DSC photoelectric transformation efficiencies are up to 0.41%.Yet with current p-DSC due to spectrum weight
The problems such as folded and electronics is compound photoelectric transformation efficiency is difficult to the progress of making a breakthrough property.
Another method for preparing photocathode is to use inorganic semiconductor material, such as p-CdS, p-CdTe, p-InP with
And Se etc., but this photocathode is unstable in the electrolyte, the weakness such as is easily corroded from an electrolyte and limits its development.
Masao Kaneko and Hideki Nakamura have found polymeric photoactive material/electrolyte first within 1985
Knot can produce photoelectric effect.Substituting tradition p-DSC using polymeric photoactive material can obtain good solving the above problems
Effect.The present invention prepares photocathode based on polymeric photoactive material.Photocathode includes conductive substrates, is prepared in conductive substrates empty
Hole transport materials.Polymer attached light active material on hole mobile material.Light is sensitized using this photocathode and conventional dyes
Anode or quantum dot sensitized light anode, centre perfusion electrolyte composition lamination dye-sensitized solar cells.Compared to traditional n-
DSC can effectively improve sun light utilization efficiency, improve photoelectric transformation efficiency and reduces cost.
The content of the invention
It is an object of the invention to provide a kind of lamination dye-sensitized solar cells, using polymer complex structure photocathode come
Substitution tradition n-DSC's imitates realizing the spectrum utilization ratio and opto-electronic conversion that improve the quick magnificent solar cell of dyestuff to electrode
Rate.
In order to achieve the above object, the present invention takes following technical scheme：
A kind of lamination dye-sensitized solar cells, it is characterised in that：The lamination dye-sensitized solar cells include transparent
Conductive substrates, dye sensitization or quantum dot sensitized light anode, using polymeric material as the polymer composite junction of light active material
Structure photocathode and the electrolyte between light anode and photocathode.
Being prepared in the electrically conducting transparent substrate of the dye sensitization light anode has printing opacity n-type semiconductor nano structural material, N-shaped
Adhere to sensitized material above nanometer semiconductor structure material；The n-type semiconductor nano material can use titanium oxide, zinc oxide,
Tin oxide or perovskite structure oxide vanadic acid barium；The sensitized material includes organo-metallic compound dyestuff, organic dyestuff
And quantum dot sensitized material.
Being prepared on the transparent conducting glass of the polymer complex structure photocathode has hole mobile material or electronic blocking
Polymer attached light active material on material, hole mobile material or electron-blocking materials；The hole mobile material has
Printing opacity and P-type conductivity energy, flat film structure or porous skeleton structure can be presented, it can be passed using organic hole
Defeated material or oxide hole mobile material；The electron-blocking materials are presented flat film structure, are hindered using organic electronic
Obstructing material or Oxide Electron barrier material MoO3,V2O5Or WO3。
The organic hole transport material uses poly- 3,4-ethylene dioxythiophene/poly styrene sulfonate, phthalein cyanogen copper, polyphenyl
Amine, polyvinylbenzenesulfonic acid, polytetrafluoroethylene (PTFE), PHEDOT, PFT one kind therein；The oxide hole mobile material is selected from NiO
Or delafossite structure hole mobile material ABO2, wherein A=Cu or Ag, B=Cr, Al, Cs or Ga.
The polymeric photoactive material has P-type conductivity, with sun absorbing properties.
Beneficial effects of the present invention：
The present invention replaces tradition by the use of the polymer complex structure photocathode using polymeric material as light active material
N-DSC to electrode, the solar spectrum utilization ratio and photoelectric transformation efficiency of the quick magnificent solar cell of dyestuff can be effectively improved,
Laid a good foundation to develop high-performance overlapped dye-sensitized solar cells later.
Brief description of the drawings
Fig. 1 is conventional n-type dye-sensitized solar cells.
Fig. 2 is the lamination dye-sensitized solar cells of the embodiment of the present invention 1.
Fig. 3 is the lamination dye-sensitized solar cells of the embodiment of the present invention 2.
Specific embodiment
Embodiment 1：
It is prepared by photocathode：One layer of hole transmission layer/electronic blocking strata 3,4- of spin coating or printing on transparent conducting glass
Ethylenedioxy thiophene/poly styrene sulfonate（PEDOT：PSS）, thickness is 60 nm or so, and 140 DEG C 10 is heat-treated in atmosphere
min；Spin coating or printing one layer of polymeric photolytic activity strata [2,6- (4,4- couples-(2- ethylhexyls) -4H- on hole transmission layer
[the 2,1-b of ring penta;3,4-b '] double thiophene-alternating -4,7- (2,1,3- diazosulfides)]/[6,6]-phenyl-C61- methyl butyrates
(PCPDTBT/PCBM) chlorobenzene solution is mixed, then 120 DEG C of 10 min for the treatment of under inert gas shielding；It is then placed in 3- first
16 h are soaked in epoxide propionitrile solution, drying is taken out.
It is prepared by light anode：TiO is printed on electro-conductive glass2Porous membrane, 30 min are processed in 510 DEG C of air.TiO2It is thin
1-10 μm of film thickness.It is soaked 14 h in dye solution, drying is taken out.
It is prepared by lamination dye-sensitized solar cells：Light anode is separated and is bonded together with photocathode by sarin film, electricity
Electrolyte solution in the prior aperture accomplished fluently on photocathode by irrigating.
The conductance good to electro-conductive glass requirement printing opacity high temperature resistant in the present embodiment.Hole transmission layer/electronics resistance
Barrier can also select other organic electronic barrier materials or oxide material such as MoO3,V2O5Or WO3.Electrolyte solution leads to
Often include solvent, oxidation-reduction pair and various additives.Oxidation-reduction pair typically has iodine/iodide ion, and sulphion electricity is right, cobalt
Ion-conductance pair and iron ion electricity equity.Solvent is generally organic solvent or water.
Embodiment 2：
It is prepared by photocathode：NiO porous membranes are printed on electro-conductive glass, 30 min are heat-treated in 510 DEG C of air.NiO is thin
1 μm or so of film thickness；Spin coating or printing one layer of polymeric photoactive layer PCPDTBT/PCBM mixing chlorobenzenes on hole transmission layer
Solution, then under inert gas shielding 120 DEG C treatment 10 min；It is then placed in soaking 16 h in 3- methoxypropionitrile solution,
Take out drying.
Method phase in the preparation method of the preparation method of light anode and lamination dye-sensitized solar cells and embodiment 1
Together.Different adjustment of the thickness of the porous hole transport casing plays of NiO according to different polymer active materials.
The conductance good to electro-conductive glass requirement printing opacity high temperature resistant in the present embodiment.Hole transmission layer can also be selected
Select its oxide p-type semiconductor material such as delafossite structure hole mobile material ABO2（Wherein A=Cu or Ag, B=Cr, Al, Cs or
Ga）.Electrolyte solution generally includes solvent, oxidation-reduction pair and various additives.Oxidation-reduction pair typically have iodine/iodine from
Son, sulphion electricity is right, and cobalt ions electricity pair and iron ion electricity are reciprocity.Solvent is generally organic solvent or water.
Claims (2)
1. a kind of lamination dye-sensitized solar cells, it is characterised in that：The lamination dye-sensitized solar cells include transparent leading
Electric substrate, dye sensitization light anode, using polymeric material as the polymer complex structure photocathode of light active material and
Electrolyte between light anode and photocathode；
Being prepared in the electrically conducting transparent substrate of the dye sensitization light anode has printing opacity n-type semiconductor nano structural material, and N-shaped is partly led
Adhere to sensitized material above body nano structural material；The n-type semiconductor nano material can use titanium oxide, zinc oxide, oxidation
Tin or perovskite structure oxide vanadic acid barium；The sensitized material includes organo-metallic compound dyestuff, organic dyestuff；
Being prepared on the transparent conducting glass of the polymer complex structure photocathode has hole mobile material or electron-blocking materials,
Polymer attached light active material on hole mobile material or electron-blocking materials；The printing opacity that the hole mobile material has had
And P-type conductivity energy, flat film structure or porous skeleton structure is presented, its can using organic hole transport material or
Oxide hole mobile material；The electron-blocking materials are presented flat film structure, using organic electronic barrier material or
Oxide Electron barrier material MoO3,V2O5Or WO3；
The organic hole transport material using poly- 3,4-ethylene dioxythiophene/poly styrene sulfonate, phthalein cyanogen copper, polyaniline,
Polyvinylbenzenesulfonic acid, polytetrafluoroethylene (PTFE), PHEDOT, PFT one kind therein；The oxide hole mobile material be selected from NiO or
Delafossite structure hole mobile material ABO2, wherein A=Cu or Ag, B=Cr, Al, Cs or Ga.
2. lamination dye-sensitized solar cells according to claim 1, it is characterised in that：The polymeric photoactive material
With P-type conductivity, with sun absorbing properties.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI532198B (en) * | 2014-07-02 | 2016-05-01 | 國立成功大學 | Solar cell and method of manufacturing the same |
| CN104681284B (en) * | 2015-03-31 | 2017-05-24 | 中国工程物理研究院材料研究所 | Paper type perovskite solar cell compound photoanode and preparation method thereof |
| CN105679941B (en) * | 2016-01-22 | 2018-02-16 | 杭州众能光电科技有限公司 | A kind of planar structure perovskite solar cell and its preparation based on p-type delafossite structure semi-conducting material |
| CN106960911A (en) * | 2017-04-11 | 2017-07-18 | 芜湖乐知智能科技有限公司 | A kind of pair of photosensitive layer hybrid solar cell and preparation method thereof |
| CN109616326B (en) * | 2019-01-09 | 2020-07-07 | 哈尔滨工业大学 | Method for preparing conductive glass substrate/ionic liquid doped n-type polyaniline film by one-step electrodeposition and application |
| KR102246984B1 (en) * | 2020-10-19 | 2021-04-30 | 독일에프에이유에를랑겐유체역학연구소 부산지사 | Photo-anode device for photoelectrochemical cell and manufacturing method thereof |
| CN114527183B (en) * | 2022-01-17 | 2023-05-16 | 西南大学 | Photoelectrochemical sensor and preparation method and application thereof |
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| CN101562231A (en) * | 2009-05-08 | 2009-10-21 | 北京大学 | Strong correlation electron system-based organic solar cell and preparation method thereof |
| CN101777574A (en) * | 2010-01-15 | 2010-07-14 | 北京大学 | Laminated composite solar battery |
| CN102074376A (en) * | 2011-01-06 | 2011-05-25 | 中国科学院安徽光学精密机械研究所 | Dye-sensitized solar battery |
| CN103247444A (en) * | 2013-05-07 | 2013-08-14 | 常州大学 | Quantum dot and dye co-sensitization solar battery and preparation method thereof |
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| EP2174329B1 (en) * | 2007-07-23 | 2011-02-09 | Basf Se | Photovoltaic tandem cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562231A (en) * | 2009-05-08 | 2009-10-21 | 北京大学 | Strong correlation electron system-based organic solar cell and preparation method thereof |
| CN101777574A (en) * | 2010-01-15 | 2010-07-14 | 北京大学 | Laminated composite solar battery |
| CN102074376A (en) * | 2011-01-06 | 2011-05-25 | 中国科学院安徽光学精密机械研究所 | Dye-sensitized solar battery |
| CN103247444A (en) * | 2013-05-07 | 2013-08-14 | 常州大学 | Quantum dot and dye co-sensitization solar battery and preparation method thereof |
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