CN103839687A - Laminated dye-sensitized solar cell - Google Patents
Laminated dye-sensitized solar cell Download PDFInfo
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- CN103839687A CN103839687A CN201310485908.1A CN201310485908A CN103839687A CN 103839687 A CN103839687 A CN 103839687A CN 201310485908 A CN201310485908 A CN 201310485908A CN 103839687 A CN103839687 A CN 103839687A
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- dye
- sensitized solar
- solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
The invention discloses a laminated dye-sensitized solar cell. The laminated dye-sensitized solar cell comprises a transparent conductive substrate, dye sensitization or quantum dot sensitization is conducted on a photoanode, polymer materials are used as a polymer composite structure photocathode of optical activity materials and electrolytes between the photoanode and the photocathode. According to the laminated dye-sensitized solar cell, the polymer composite structure photocathode is used so that the solar spectrum utilization rate of the dye-sensitized solar cell can be effectively improved, and a foundation is laid for developing high-performance laminated dye-sensitized solar cells in the future.
Description
Technical field
The invention belongs to solar cell field, be specifically related to a kind of dye-sensitized solar cells.
Background technology
The dye sensitization sun (DSC) battery is cheap because having, preparation technology is simple, and the features such as environmental friendliness are subject to the extensive concern of all circles.Dye-sensitized solar cells has been obtained great development in the past few decades.The photoelectric conversion efficiency of dye-sensitized solar cells has broken through 12% at present, can compare favourably with amorphous silicon level solar cell.The novel sensitization cell photoelectric conversion efficiency based on perovskite structure has reached 15%.
How dye-sensitized solar cells, as the third generation solar cell technology, improves its photoelectric conversion efficiency and becomes the focus of research, and the traditional N-shaped single-unit dye-sensitized solar cells in theory photoelectric conversion efficiency limit is 31%.Adopting sensitization photocathode to substitute becomes lamination dye-sensitized solar cells theoretical limit photoelectric conversion efficiency can bring up to 43% to a system of solutions in conventional n-DSC.But the low photoelectric conversion efficiency of photocathode solar cell (p-DSC) is restricting the development of lamination dye-sensitized solar cells.
The research of p-DSC at present mainly concentrates on organic dye sensitized p-type oxide porous membrane.The semiconductive thin film being applied in p-DSC mainly contains NiO, CuGaO
2, the p-type semi-conducting materials such as CuSCN.What up to the present cell photoelectric transformation efficiency was best is the electrode of NiO semi-conducting material, has also obtained research the most widely.But NiO material has certain light absorption and lower serious its application at p-DSC that restricted of cavity transmission ability.P-type CuGaO
2semiconductive thin film is because its valence band location lower than NiO has obtained higher open circuit voltage.Mostly be D-π-A structure organic dyestuff from the dyestuff in the conventional different p-DSC of ruthenium dye of n-DSC.P-DSC photoelectric conversion efficiency has reached 0.41% at present.But because current p-DSC is because the problem such as spectra overlapping and electron recombination photoelectric conversion efficiency is difficult to the progress of making a breakthrough property.
Another method of preparing photocathode is to adopt inorganic semiconductor material, such as p-CdS, and p-CdTe, p-InP and Se etc., but this photocathode is unstable in electrolyte, has easily been limited its development by weakness such as electrolyte corrosions.
Masao Kaneko and Hideki Nakamura in 1985 finds that polymer light active material/electrolyte knot can produce photoelectric effect first.Utilize polymer light active material to substitute traditional p-DSC and can address the above problem the effect obtaining.The present invention is based on polymer light active material and prepare photocathode.Photocathode comprises conductive substrates, prepares hole mobile material in conductive substrates.Polymer attached light active material on hole mobile material.Adopt this photocathode and conventional dyes sensitization light anode or quantum dot sensitized smooth anode, middle perfusion electrolyte ingredient lamination dye-sensitized solar cells.Can effectively improve sunlight utilance than traditional n-DSC, improve photoelectric conversion efficiency and reduce costs.
Summary of the invention
The object of this invention is to provide a kind of lamination dye-sensitized solar cells, utilize polymer complex structure photocathode replace traditional n-DSC to electrode, realize the spectrum utilization ratio and the photoelectric conversion efficiency that improve dyestuff quick magnificent solar cell.
In order to achieve the above object, the present invention takes following technical scheme:
A kind of lamination dye-sensitized solar cells, it is characterized in that: described lamination dye-sensitized solar cells comprises electrically conducting transparent substrate, dye sensitization or quantum dot sensitized smooth anode, the polymer complex structure photocathode using polymeric material as light active material and the electrolyte between light anode and photocathode.
In the electrically conducting transparent substrate of described dye sensitization light anode, be prepared with printing opacity N-shaped nanometer semiconductor structure material, above N-shaped nanometer semiconductor structure material, adhere to sensitized material; Described N-shaped semiconductor nano material can adopt titanium oxide, zinc oxide, tin oxide or perovskite structure oxide vanadic acid barium; Described sensitized material comprises organo-metallic compound dyestuff, organic dyestuff and quantum dot sensitized material.
On the transparent conducting glass of described polymer complex structure photocathode, be prepared with hole mobile material or electronic blocking material, polymer attached light active material on hole mobile material or electronic blocking material; The printing opacity that described hole mobile material has had and P-type conduction performance, can present flat film structure or porous skeleton structure, and it can adopt organic hole transferring material or oxide hole mobile material; Described electronic blocking material presents flat film structure, adopts organic electronic barrier material or oxide electronic blocking material MoO
3, V
2o
5or WO
3.
Described organic hole transferring material adopts poly-3,4-ethylene dioxythiophene/poly styrene sulfonate, phthalein cyanogen copper, polyaniline, polystyrene sulfonic acid, polytetrafluoroethylene, PHEDOT, PFT one wherein; Described oxide hole mobile material is selected from NiO or delafossite structure hole mobile material ABO
2, wherein A=Cu or Ag, B=Cr, Al, Cs or Ga.
Described polymer light active material has P-type conduction, has sunlight absorbent properties.
Beneficial effect of the present invention:
The polymer complex structure photocathode of utilization of the present invention using polymeric material as light active material replace traditional n-DSC to electrode, can effectively improve solar spectrum utilization ratio and the photoelectric conversion efficiency of the quick magnificent solar cell of dyestuff, lay a good foundation for develop high-performance overlapped dye-sensitized solar cells later.
Accompanying drawing explanation
Fig. 1 is traditional N-shaped dye-sensitized solar cells.
Fig. 2 is the lamination dye-sensitized solar cells of the embodiment of the present invention 1.
Fig. 3 is the lamination dye-sensitized solar cells of the embodiment of the present invention 2.
Embodiment
Embodiment 1:
Photocathode preparation: spin coating or printing one deck hole transmission layer/electronic blocking strata 3,4-ethylene dioxythiophene/poly styrene sulfonate (PEDOT:PSS) on transparent conducting glass, thickness is 60 nm left and right, 140 ℃ of 10 min of heat treatment in air; On hole transmission layer, [(4,4-couple-(2-ethylhexyl)-4H-encircles penta [2,1-b to 2,6-for spin coating or printing one layer of polymeric photolytic activity strata; 3,4-b '] two thiophene-alternately-4,7-(2,1,3-diazosulfide)]/[6,6]-phenyl-C61-methyl butyrate (PCPDTBT/PCBM) mixing chlorobenzene solution, then 120 ℃ of processing 10 min under inert gas shielding; Then put into 3-methoxypropionitrile solution and soak 16 h, taking-up dries up.
Light anode preparation: print TiO on electro-conductive glass
2porous membrane, processes 30 min in 510 ℃ of air.TiO
2film thickness 1-10 μ m.It is soaked in dye solution to 14 h, taking-up dries up.
Lamination dye-sensitized solar cells preparation: light anode and photocathode are separated and are bonded together by sarin film, electrolyte solution is by pouring in the aperture of accomplishing fluently on photocathode in advance.
In the present embodiment, electro-conductive glass is required to the high temperature resistant good conductance of printing opacity.Hole transmission layer/electronic barrier layer also can select other organic electronic barrier materials or oxide material as MoO
3, V
2o
5or WO
3.Electrolyte solution generally includes solvent, oxidation-reduction pair and various additive.Oxidation-reduction pair generally has iodine/iodide ion, and sulphion electricity is right, cobalt ions electricity to and iron ion electricity equity.Solvent is generally organic solvent or water.
Embodiment 2:
Photocathode preparation: print NiO porous membrane on electro-conductive glass, heat treatment 30 min in 510 ℃ of air.NiO film thickness 1 μ m left and right; Spin coating or printing one layer of polymeric photoactive layer PCPDTBT/PCBM mixing chlorobenzene solution on hole transmission layer, then 120 ℃ of processing 10 min under inert gas shielding; Then put into 3-methoxypropionitrile solution and soak 16 h, taking-up dries up.
Method in preparation method and the embodiment 1 of the preparation method of light anode and lamination dye-sensitized solar cells is identical.The thickness of NiO porous hole transport casing play is according to the different adjustment of different polymer active materials.
In the present embodiment, electro-conductive glass is required to the high temperature resistant good conductance of printing opacity.Hole transmission layer also can select its oxide p-type semi-conducting material as delafossite structure hole mobile material ABO
2(wherein A=Cu or Ag, B=Cr, Al, Cs or Ga).Electrolyte solution generally includes solvent, oxidation-reduction pair and various additive.Oxidation-reduction pair generally has iodine/iodide ion, and sulphion electricity is right, cobalt ions electricity to and iron ion electricity equity.Solvent is generally organic solvent or water.
Claims (5)
1. a lamination dye-sensitized solar cells, it is characterized in that: described lamination dye-sensitized solar cells comprises electrically conducting transparent substrate, dye sensitization or quantum dot sensitized smooth anode, the polymer complex structure photocathode using polymeric material as light active material and the electrolyte between light anode and photocathode.
2. lamination dye-sensitized solar cells according to claim 1, is characterized in that: in the electrically conducting transparent substrate of described dye sensitization light anode, be prepared with printing opacity N-shaped nanometer semiconductor structure material, above N-shaped nanometer semiconductor structure material, adhere to sensitized material; Described N-shaped semiconductor nano material can adopt titanium oxide, zinc oxide, tin oxide or perovskite structure oxide vanadic acid barium; Described sensitized material comprises organo-metallic compound dyestuff, organic dyestuff and quantum dot sensitized material.
3. lamination dye-sensitized solar cells according to claim 1, it is characterized in that: on the transparent conducting glass of described polymer complex structure photocathode, be prepared with hole mobile material or electronic blocking material, polymer attached light active material on hole mobile material or electronic blocking material; The printing opacity that described hole mobile material has had and P-type conduction performance, can present flat film structure or porous skeleton structure, and it can adopt organic hole transferring material or oxide hole mobile material; Described electronic blocking material presents flat film structure, adopts organic electronic barrier material or oxide electronic blocking material MoO
3, V
2o
5or WO
3.
4. lamination dye-sensitized solar cells according to claim 3, it is characterized in that: described organic hole transferring material adopts poly-3,4-ethylene dioxythiophene/poly styrene sulfonate, phthalein cyanogen copper, polyaniline, polystyrene sulfonic acid, polytetrafluoroethylene, PHEDOT, PFT one wherein; Described oxide hole mobile material is selected from NiO or delafossite structure hole mobile material ABO
2, wherein A=Cu or Ag, B=Cr, Al, Cs or Ga.
5. lamination dye-sensitized solar cells according to claim 3, is characterized in that: described polymer light active material has P-type conduction, has sunlight absorbent properties.
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| CN103839687B CN103839687B (en) | 2017-06-06 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681284A (en) * | 2015-03-31 | 2015-06-03 | 中国工程物理研究院材料研究所 | Paper type perovskite solar cell compound photoanode and preparation method thereof |
| CN105304337A (en) * | 2014-07-02 | 2016-02-03 | 成功大学 | Solar cell and method for manufacturing same |
| CN105679941A (en) * | 2016-01-22 | 2016-06-15 | 杭州众能光电科技有限公司 | P-type delafossite structure semiconductor material-based plane structure perovskite solar cell and preparation thereof |
| CN106960911A (en) * | 2017-04-11 | 2017-07-18 | 芜湖乐知智能科技有限公司 | A kind of pair of photosensitive layer hybrid solar cell and preparation method thereof |
| CN109616326A (en) * | 2019-01-09 | 2019-04-12 | 哈尔滨工业大学 | A kind of step electro-deposition prepares the methods and applications of electro-conductive glass substrate/ionic liquid doping N-shaped polyaniline film |
| KR102246984B1 (en) * | 2020-10-19 | 2021-04-30 | 독일에프에이유에를랑겐유체역학연구소 부산지사 | Photo-anode device for photoelectrochemical cell and manufacturing method thereof |
| CN114527183A (en) * | 2022-01-17 | 2022-05-24 | 西南大学 | Photoinduced electrochemical sensor and preparation method and application thereof |
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| JP2010534409A (en) * | 2007-07-23 | 2010-11-04 | ビーエーエスエフ ソシエタス・ヨーロピア | Photovoltaic tandem battery |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304337A (en) * | 2014-07-02 | 2016-02-03 | 成功大学 | Solar cell and method for manufacturing same |
| CN104681284A (en) * | 2015-03-31 | 2015-06-03 | 中国工程物理研究院材料研究所 | Paper type perovskite solar cell compound photoanode and preparation method thereof |
| CN105679941A (en) * | 2016-01-22 | 2016-06-15 | 杭州众能光电科技有限公司 | P-type delafossite structure semiconductor material-based plane structure perovskite solar cell and preparation thereof |
| CN105679941B (en) * | 2016-01-22 | 2018-02-16 | 杭州众能光电科技有限公司 | A kind of planar structure perovskite solar cell and its preparation based on p-type delafossite structure semi-conducting material |
| CN106960911A (en) * | 2017-04-11 | 2017-07-18 | 芜湖乐知智能科技有限公司 | A kind of pair of photosensitive layer hybrid solar cell and preparation method thereof |
| CN109616326A (en) * | 2019-01-09 | 2019-04-12 | 哈尔滨工业大学 | A kind of step electro-deposition prepares the methods and applications of electro-conductive glass substrate/ionic liquid doping N-shaped polyaniline film |
| KR102246984B1 (en) * | 2020-10-19 | 2021-04-30 | 독일에프에이유에를랑겐유체역학연구소 부산지사 | Photo-anode device for photoelectrochemical cell and manufacturing method thereof |
| CN114527183A (en) * | 2022-01-17 | 2022-05-24 | 西南大学 | Photoinduced electrochemical sensor and preparation method and application thereof |
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| CN103839687B (en) | 2017-06-06 |
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