CN108364964A - A kind of sensing system - Google Patents
A kind of sensing system Download PDFInfo
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- CN108364964A CN108364964A CN201810026530.1A CN201810026530A CN108364964A CN 108364964 A CN108364964 A CN 108364964A CN 201810026530 A CN201810026530 A CN 201810026530A CN 108364964 A CN108364964 A CN 108364964A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of sensing systems, the power supply being connect including sensor and with the sensor, the power supply includes photovoltaic cell and impulse generating unit, the positive output end of the impulse generating unit is connect with the cathode of the photovoltaic cell, the negative sense output end of the impulse generating unit is connect with the anode of the photovoltaic cell, and the power supply is for providing electric energy needed for the sensor.The pulse signal that impulse generating unit generates acts on photovoltaic cell, improve the transfer efficiency of photovoltaic cell, and then improve the efficiency of sensor, simultaneously, when there is no light source, impulse generating unit can also individually power to sensor, increase the flexibility of power supply power supply so that application scenario is more wide.
Description
Technical field
The present invention relates to photoelectron technical fields, and in particular to a kind of sensing system.
Background technology
With the development of senser element, sensing technology is illustrating prodigious application prospect now.In artificial intelligence, letter
Number detection etc. fields, sensor the signal of environment is converted into electric signal, be input to control chip or display in, driving machine
The action of tool equipment or by mux --out signal exhibits to the mankind.It, can be with by sensor currently, the type very abundant of sensor in the market
It realizes to mechanics, temperature, electricity, magnetic induction intensity, the detection of intensity of illumination and wavelength.With the development of flexible electronic devices,
Sensing unit in wearable device can detect the pulse vibration signal on human body, the temperature signals etc. of people, realization pair
The detection of level of human health.Therefore, electronic sensor just develops towards miniaturization, portability and functionalization.But due to sensing
Device usually requires external source power input voltage to realize the detection to outer signals, this is undoubtedly an impediment to its hair to miniature portable
Exhibition.
Deficiency in for the above-mentioned prior art is connect using the solar cell being easily integrated with sensor, solar energy
Photovoltaic cell provides required power supply for sensor, and just eliminating external power supply in this way realizes the miniaturization of sensor and portable
Change.However, solar cell due to own structural characteristics cause after a period of operation efficiency can reduce, and then cause to sense
Device efficiency reduces.
Invention content
In view of this, an embodiment of the present invention provides a kind of sensing system, to solve sensor efficiency in the prior art
Low problem.
For this purpose, an embodiment of the present invention provides following technical solutions：
An embodiment of the present invention provides a kind of sensing systems, including：Sensor and the electricity being connect with the sensor
Source, the power supply include photovoltaic cell and impulse generating unit, positive output end and the photovoltaic of the impulse generating unit
The cathode of battery connects, and the negative sense output end of the impulse generating unit is connect with the anode of the photovoltaic cell, the power supply
For providing electric energy needed for the sensor.
Optionally, the impulse generating unit includes nano generator and rectification unit.
Optionally, the rectification unit is halfwave rectifier or full-wave rectification.
Optionally, further include：Voltage regulation unit, the voltage regulation unit are connect with the sensor parallel.
Optionally, the photovoltaic cell is flexible photovoltaic battery or photovoltaic cell group.
Optionally, the photovoltaic cell is flexible perovskite photovoltaic cell.
Optionally, the flexible perovskite photovoltaic cell includes：First flexible base layer, first electrode layer, the first electronics
Transport layer, light-absorption layer, the first hole transmission layer and the second electrode lay；Wherein, it is soft to be set to described first for the first electrode layer
Property basal layer upper substrate surface, first electron transfer layer is set in the first electrode layer, the light-absorption layer setting
In on first electron transfer layer, first hole transmission layer is set on the light-absorption layer, and the second electrode lay is set
It is placed on first hole transmission layer.
Optionally, the sensor is photoelectric sensor, gas sensor, pressure sensor, magnetometric sensor or temperature
Spend sensor.
Optionally, the photoelectric sensor is organic photosensitive diode.
Optionally, the organic photosensitive diode includes：Second flexible base layer, third electrode layer, electronic barrier layer,
One photosensitive layer, hole blocking layer and the 4th electrode layer；Wherein, the third electrode layer is set to second flexible base layer
Upper substrate surface, the electronic barrier layer are set on the third electrode layer, and first photosensitive layer is set to the electronics
On barrier layer, the hole blocking layer is set on first photosensitive layer, and the 4th electrode layer is set to the hole resistance
In barrier.
Optionally, when the photoelectric sensor is organic photosensitive diode, further include：Switch unit, the switch are single
It is first to be connect with the photovoltaic cell, it connect with the impulse generating unit, is also connect with the sensor.
Optionally, the switch unit includes first switch, second switch and third switch, wherein described first opens
The first end of pass is connect with the positive output end of the impulse generating unit, the second end of the first switch and the photovoltaic electric
The cathode in pond connects, and the third end of the first switch is connect with the 4th electrode layer of the organic photosensitive diode；Described
Two switch first ends connect with the 4th electrode layer of the organic photosensitive diode, the second end of the second switch with it is described
The anode connection of photovoltaic cell；The first end of the third switch is connect with the negative sense output end of the impulse generating unit, also
It is connect with the third electrode layer of the organic photosensitive diode, the anode of the second end and the photovoltaic cell of the third switch
The third end of connection, the third switch is connect with the cathode of the photovoltaic cell.
Optionally, further include：Display unit, the display unit are connect with the sensor series.
Technical solution of the embodiment of the present invention, has the following advantages that：
Sensing system provided in an embodiment of the present invention, including sensor and the power supply that is connect with the sensor, institute
It includes photovoltaic cell and impulse generating unit, positive output end and the photovoltaic cell of the impulse generating unit to state power supply
Cathode connects, and the negative sense output end of the impulse generating unit is connect with the anode of the photovoltaic cell, and the power supply is for carrying
For electric energy needed for the sensor.The pulse signal that impulse generating unit generates acts on photovoltaic cell, improves photovoltaic electric
The transfer efficiency in pond, and then the efficiency of sensor is improved, meanwhile, when not having light source, impulse generating unit can also be independent
It powers to sensor, increases the flexibility of power supply power supply so that application scenario is more wide.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, other drawings may also be obtained based on these drawings.
Fig. 1 is the schematic diagram of a specific example of the sensing system of the embodiment of the present invention；
Fig. 2 is the schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of a specific example of the photoelectric sensor of the sensing system of the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Fig. 6 is the structural representation of another specific example of the photoelectric sensor of the sensing system of the embodiment of the present invention
Figure；
Fig. 7 is the structural schematic diagram of a specific example of the photovoltaic cell of the sensing system of the embodiment of the present invention；
Fig. 8 is the schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Fig. 9 be the embodiment of the present invention sensing system rectification before nano generator output signal schematic diagram；
Figure 10 be the embodiment of the present invention sensing system rectification after nano generator output signal schematic diagram；
Figure 11 is the electric signal schematic diagram that the sensing system of the embodiment of the present invention senses under the irradiation of light pulse；
Figure 12 is the schematic diagram of the nano generator output pulse signal in the sensing system of the embodiment of the present invention；
Figure 13 is the I-V test curves of the photovoltaic cell in the sensing system of the embodiment of the present invention；
Figure 14 is the schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Figure 15 is the schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Figure 16 is the schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Figure 17 is the structural schematic diagram of a specific example of the gas sensor of the sensing system of the embodiment of the present invention；
Figure 18 is the schematic diagram of another specific example of the sensing system of the embodiment of the present invention；
Figure 19 is the structural schematic diagram of a specific example of the electromagnetic sensor of the sensing system of the embodiment of the present invention.
Reference numeral：
1, sensor；2, photovoltaic cell；3, impulse generating unit；4, nano generator；5, rectification unit；6, voltage stabilizing list
Member；7, display unit；31, the second flexible base layer；32, third electrode layer；33, electronic barrier layer；34, the first photosensitive layer；35、
Hole blocking layer；36, the 4th electrode layer；61, the basal layer with electrode；62, the second electron transfer layer；63, the second photosensitive layer；
64, the second hole transmission layer；65, the 5th electrode layer；71, the first flexible base layer；72, first electrode layer；73, electron-transport
Layer；74, light-absorption layer；75, hole transmission layer；76, the second electrode lay；171, the first substrate；172, the first insulating layer；173, first
Semiconductor layer；174, the 8th electrode；191, the second substrate；192, second insulating layer；193, the second semiconductor layer；194, the 9th electricity
Pole；M1, the first metal-oxide-semiconductor；M2, the second metal-oxide-semiconductor；M3, third metal-oxide-semiconductor；M4, the 4th metal-oxide-semiconductor；K1, first switch；K2, second open
It closes；K3, third switch；K4, the 4th switch；K5, the 5th switch；K6, the 6th switch；K7, the 7th switch；K8, the 8th switch.
Specific implementation mode
Technical scheme of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
The every other embodiment that personnel are obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for the description present invention and simplify description, do not indicate or imply the indicated device or element must have a particular orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for description purposes only, and is not understood to indicate or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
Can also be electrical connection to be mechanical connection；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the connection inside two elements, can be wirelessly connected, can also be wired connection.For those of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As long as in addition, technical characteristic involved in invention described below different embodiments non-structure each other
It can be combined with each other at conflict.
A kind of sensing system is provided in the present embodiment, as shown in Figure 1, including：It sensor 1 and is connect with sensor 1
Power supply, power supply includes photovoltaic cell 2 and impulse generating unit 3, positive output end and the photovoltaic cell 2 of impulse generating unit 3
Cathode connection, the negative sense output end of impulse generating unit 3 connect with the anode of photovoltaic cell 2, and power supply is used to provide sensor 1
Required electric energy.
In the present embodiment, as shown in Fig. 2, impulse generating unit 3 includes nano generator 4 and rectification unit 5, rectification list
Member 5 is halfwave rectifier, and halfwave rectifier uses rectifier diode；Certainly, in other embodiments, halfwave rectifier can also use it
It, which is switched, realizes, such as mos field effect transistor (Metal-Oxide-Semiconductor Field-
Effect Transistor, are abbreviated as MOSFET) or insulated gate bipolar transistor (Insulated Gate Bipolar
Transistor is abbreviated as IGBT) etc., rationally setting as needed；Rectification unit 5 can also use full-wave rectification, root
According to needs rationally setting.
In the present embodiment, sensor 1 is photoelectric sensor, specially organic photosensitive diode, as shown in figure 3, organic
Photodiode includes：Second flexible base layer 31, third electrode layer 32, electronic barrier layer 33, the first photosensitive layer 34, hole resistance
Barrier 35 and the 4th electrode layer 36；Wherein, third electrode layer 32 is set to the upper substrate surface of the second flexible base layer 31, electronics
Barrier layer 33 is set on third electrode layer 32, and the first photosensitive layer 34 is set on electronic barrier layer 33, and hole blocking layer 35 is set
It is placed on the first photosensitive layer 34, the 4th electrode layer 36 is set on hole blocking layer 35.In the present embodiment, the 4th electrode layer 36
Can also be certainly that metal electrodes and carbon nanotube, the graphenes etc. such as gold, silver are non-in other embodiments for aluminium electrode
Metal electrode, as needed rationally setting.
Organic photosensitive diode in the present embodiment can be prepared via a method which, be specifically comprised the following steps：
A piece of flexible polyethylene terephthalate (PET) substrate is cleaned, above-mentioned substrate is the second flexible base layer 31；In PET bases
Bottom is that the one side of upper substrate sputters tin indium oxide (ITO) layer of 150nm, and ITO layer is third electrode layer 32；By way of spin coating
Prepare the PEDOT of 60nm thickness:PSS (mixture of poly- 3,4-rthylene dioxythiophene and poly styrene sulfonate), spin coating rotating speed
It is 3000 rpms, PEDOT:PSS layer is electronic barrier layer 33；Wait for PEDOT:After PSS layer annealing, indoles is prepared using vapor deposition
Side's acid cyanines (ISQ) first photosensitive layer 34, evaporation rate are 0.1 nanometer per second, and 34 thickness of the first photosensitive layer is about 55nm；In order to
Dark current is reduced, one layer of hole blocking layer 35 can be prepared after the completion of prepared by the first photosensitive layer 34；Finally it is deposited 120 nanometers
Aluminium electrode, above-mentioned aluminium electrode be the 4th electrode layer 36.Certainly, in other embodiments, can also use in the prior art its
Its conventional method is prepared, as needed rationally setting.
When photoelectric sensor is organic photosensitive diode, sensing system further includes switch unit, switch unit and light
It lies prostrate battery 2 to connect, connect with impulse generating unit 3, also connect with sensor 1.
In the present embodiment, as shown in figure 4, rectification unit 5 is full-wave rectification, using four MOSFET triodes, respectively
It is N-type metal-oxide-semiconductor, M3 and M4 for the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4, M1 and M2
For p-type metal-oxide-semiconductor；Switch unit includes first switch K1, second switch K2 and third switch K3, the first end of first switch K1
It being connect with the positive output end of impulse generating unit 3, the second end of first switch K1 is connect with the cathode of photovoltaic cell 2, and first
The third end of switch K1 is connect with the 4th electrode layer of organic photosensitive diode；
The first end of second switch K2 is connect with the 4th electrode layer of organic photosensitive diode, the second end of second switch K2
It is connect with the anode of photovoltaic cell 2；
The first end of third switch K3 is connect with the negative sense output end of impulse generating unit 3, also with organic photosensitive diode
The connection of third electrode layer, the second end of third switch K3 connect with the positive of photovoltaic cell 2, the third end of third switch K3 and
The cathode of photovoltaic cell 2 connects.
The course of work of above-mentioned switch unit is specially：When the first end of first switch K1 is connected with third end, nanometer
Generator 4 is individually powered；When the first end of first switch K1 is connected and the first end and second of third switch K3 with second end
When the conducting of end, the pulse signal that nano generator 4 exports acts on photovoltaic cell 2, for improving transfer efficiency；It opens when second
When the first end of pass K2 conductings and third switch K3 are connected with third end, photovoltaic cell 2 is individually powered.Pass through switch unit reality
The multiple feed of organic photosensitive diode is showed.
As an alternative embodiments of the present embodiment, as shown in figure 5, switch unit includes the 4th switch K4, the
Five switch K5, the 6th switch K6, the 7th switch K7 and the 8th switch K8, first end and the impulse generating unit 3 of the 4th switch K4
The connection of positive output end, the second end of the 4th switch K4 connect with the cathode of photovoltaic cell 2；The first end of 5th switch K5 with
The positive output end of impulse generating unit 3 connects, the second end of the 5th switch K5 and the 4th electrode layer of organic photosensitive diode
Connection；The first end of 6th switch K6 is connect with the 4th electrode layer of organic photosensitive diode, the second end of the 6th switch K6 with
The anode connection of photovoltaic cell 2；The first end of 7th switch K7 is connect with the anode of photovoltaic cell 2, and the second of the 7th switch K7
End is connect with the negative sense output end of impulse generating unit 3, is also connect with the third electrode layer of organic photosensitive diode；8th switch
The first end of K8 is connect with the cathode of photovoltaic cell 2, the second end of the 8th switch K8 and the negative sense output end of impulse generating unit 3
Connection.
In the present embodiment, the 4th switch K4 to the 8th switch K8 is touch-switch, certainly, in other embodiments,
It may be other types of switch, such as use the small toggle switch being easily integrated, as needed rationally setting.
The course of work of above-mentioned switch unit is specially：When the 5th switch K5 conductings, nano generator 4 is individually powered；
When the 4th switch K4 and the 7th switch K7 are both turned on, the pulse signal that nano generator 4 exports acts on photovoltaic cell 2,
For improving transfer efficiency；When the 6th switch K6 and the 8th switch K8 are both turned on, photovoltaic cell 2 is individually powered.
As an alternative embodiments of the present embodiment, as shown in fig. 6, photoelectric sensor can also be with electrode
Basal layer 61, the second electron transfer layer 62, the second photosensitive layer 63, the second hole transmission layer 64 and the 5th electrode layer 65；Wherein,
Basal layer 61 with electrode can be the SnO for being coated with doping fluorine2(FTO) or the substrate of glass of ITO materials or to be coated with FTO
Or the flexible substrates of ITO, such as PET base；Homogenous material, such as TiO may be used in second electron transfer layer 622Deng can also adopt
With composite material, metal oxide and organic material can also be used compound, such as TiO2And polymethyl methacrylate
(polymethyl methacrylate, be abbreviated as PMMA) is compound；Second photosensitive layer 63 can be organic material, organic-inorganic
Hydridization perovskite material, inorganic silicon materials etc.；Second hole transmission layer 64 can use organic material, such as fullerene；5th
Electrode layer 65 can use the nonmetallic materials such as metal materials and carbon nanotube, graphene such as gold and silver, can also use ITO
Equal transparent materials.
In the present embodiment, photovoltaic cell 2 is flexible perovskite photovoltaic cell, as shown in fig. 7, perovskite photovoltaic cell packet
It includes：First flexible base layer 71, first electrode layer 72, electron transfer layer 73, light-absorption layer 74, hole transmission layer 75 and second electrode
Layer 76；Wherein, first electrode layer 72 is set to the upper substrate surface of the first flexible base layer 71, and electron transfer layer 73 is set to
On one electrode layer 72, light-absorption layer 74 is set on electron transfer layer 73, and hole transmission layer 75 is set on light-absorption layer 74, the second electricity
Pole layer 76 is set on hole transmission layer 75；Certainly, in other embodiments, photovoltaic cell 2 can be flexible or non-flexible
Inorganic photovoltaic cell, flexibility or non-flexible organic inorganic hybridization perovskite photovoltaic cell etc., as needed rationally setting.
In the present embodiment, the second electrode lay 76 is gold electrode, can also be the metal electrodes such as aluminium, silver in other embodiments certainly,
And carbon nanotube, the non-metal electrodes such as graphene, rationally setting as needed.
Above-mentioned perovskite photovoltaic cell can be prepared via a method which, be included the following steps：Clean a piece of flexibility PET
Substrate, above-mentioned substrate is as the first flexible base layer 71；The ITO layer of 150nm is sputtered in the one side that PET base is upper substrate, on
It is first electrode layer 72 to state ITO layer；After 73 solution of electron transfer layer is mixed, electron transfer layer is prepared by way of spin coating
73, electron transfer layer 73 can be titanium oxide (TiO2) etc. materials, 73 thickness of electron transfer layer is about 100nm；Perovskite extinction
Layer 74 is by with 4:It includes concentration point that 1 dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMSO), which is used as mixed solvent, solute,
It is not：A concentration of 1 mole every liter of iodine carbonamidine (FAI), diiodinating lead (PbI2) 1.1 moles every liter a concentration of, methyl bromide amine
(MABr) a concentration of 0.2 mole every liter, lead bromide (PbBr2) 0.2 mole every liter a concentration of；Under mixed solution is heated at 70 degree
Stirring 2 hours takes 80 microlitres of solution (1000 rpms) by way of two step spin coatings to prepare light-absorption layer 74 after the completion of stirring；
Above-mentioned spin coating process is repeated, the preparation of light-absorption layer 74 is completed；[(the 4- methoxyl groups of N, N- bis- of 72.3 milligrams of 2,2', 7,7'- tetra-
Phenyl) amino] -9,9'- spiral shells two fluorenes (spiro-MeOTAD) and 28.8 microlitres of 4- tert .-butylpyridines (4-tert-
Butylpyridine it) is dissolved in 1 milliliter of chlorobenzene solvent, by way of spin coating (3000 rpms), completes hole transport
The preparation of layer 75；By way of vapor deposition, the gold electrode of 60nm is prepared, above-mentioned gold electrode is the second electrode lay 76.Certainly, at it
It in its embodiment, can also be prepared using other conventional methods in the prior art, as needed rationally setting.
Since organic photosensitive diode and perovskite photovoltaic cell are flexible so that sensing system realizes complete soft
Property, and preparation process is simple, it can be achieved that large-area high-density functionalization is integrated, and it is integrated greatly to realize function, drops simultaneously
Low production cost, realizes miniature portable；Grazing condition device can be applied in Grazing condition wearable device, in the following intelligence
There is broad prospect of application in device, wearable electronic and human-computer interaction device.
In the present embodiment, nano generator 4 includes the first substrate, the 6th electrode layer, frictional layer and the 7th electrode layer, the
Two substrates.Nano generator 4 in the present embodiment can be prepared via a method which, clean two panels flexibility PET bases first
Bottom, wherein a piece of PET base one side sputtering 100nm Cu, in another PET base prepare one layer of 100nm Cu and
100um polyvinyl chloride (PVC) layer, the Cu layers of first substrate of PVC faces are covered thereon.Certainly, in other embodiments, also may be used
To be prepared using other conventional methods in the prior art, rationally setting as needed.
As an alternative embodiments of the present embodiment, as shown in figure 8, being received in order to which suppressor pulse generates in unit 3
The backward voltage output of rice generator 4, rectification unit 5 is full-wave rectification, and using four MOSFET triodes, M1 and M2 are N-type
Metal-oxide-semiconductor, M3 and M4 are p-type metal-oxide-semiconductor.Fig. 9 is the output signal schematic diagram of nano generator before rectification, and Figure 10 is nanometer after rectification
The output signal schematic diagram of generator, from Fig. 9 and Figure 10 it is found that also becoming just after the negative-going pulse of nano generator 4 is rectified
To pulse, a cycle is interior, and there are two electric pulses so that the efficiency of nano generator 4 is doubled；Certainly, in other implementations
In example, rectification unit 5 can also be Half bridge rectifier unit or other class full-bridge rectification units, and rationally setting is as needed
It can.
When sensor-based system is under light or sunlight, photovoltaic cell is powered to sensor, and sensor is to the external world
Illumination detected, when there is radiation of visible light to sensor, sensor internal generate electron hole pair, formed photoelectricity
Stream, the voltage of divider resistance drastically increases at this time, as shown in figure 11, detects the luminous situation of OLED light source that interruption is lighted, real
Conversion of the light pulse signal to voltage pulse signal is showed.
Figure 12 is the schematic diagram of nano generator (TENG) output pulse signal, and nano generator exports after rectifier bridge
Forward and reverse electric current be rectified into same direction, there are two electric pulses in a cycle, improve the effect of nano generator
Rate；After photovoltaic cell works a period of time, using nano generator to photovoltaic cell input pulse, to restore photovoltaic cell
Efficiency.Figure 13 is the I-V test curves of photovoltaic cell, as shown in Figure 13, as the pulse voltage of nano generator output acts on
In on photovoltaic cell, making the efficiency of photovoltaic cell be increased to 11.87% from 10.03%, efficiency (PCE) improves about 20% left side
It is right.
The sensor system, the pulse signal that impulse generating unit generates act on photovoltaic cell, improve photovoltaic
The transfer efficiency of battery, and then the efficiency of sensor is improved, and solar energy and indoor light etc. can be used as from driving light
Source, meanwhile, when not having light source, impulse generating unit can also individually power to sensor, increase the flexible of power supply power supply
Property so that application scenario is more wide.
On the basis of the above embodiments, in order to ensure that the voltage of power supply output is more stablized, as shown in figure 14, sensor
System further includes the voltage regulation unit 6 being connected in parallel with sensor 1.In the present embodiment, voltage regulation unit 6 is Zener diode, together
Diode of receiving have forward and reverse can voltage stabilizing characteristic；Certainly, in other embodiments, voltage regulation unit 6 can be with
For other voltage stabilizing elements, such as capacitance, as needed rationally setting.
On the basis of the above embodiments, it for the voltage or size of current of more easily control power supply output, realizes
Variable output voltage, photovoltaic cell 2 are photovoltaic cell group, by the pattern in parallel and serial and the change that change photovoltaic cell group
It is connected in parallel on the specification of the Zener diode at 2 both ends of photovoltaic cell, realizes the control to the output voltage or electric current of photovoltaic cell 2.
On the basis of the above embodiments, in order to more intuitively show power supply export situation, as shown in figure 15, sensor
System further includes the display unit 7 being connected in series with sensor 1.In this example it is shown that unit 7 is light emitting diode, when
So, in other embodiments, display unit 7 can also be other display elements, such as LED or display screen, close as needed
Reason setting.
External environment is detected by using photovoltaic cell and nano generator driving sensor, realizes sensor
Driving certainly for system, it is energy saving, and meet requirement prepared by sensing system miniaturization.It is needed different from traditional sense
External source voltage realizes the sensing to external environment, they are made with external visible light (such as sunlight, light) energy and mechanical energy
For the energy, external voltage is not needed, is realized from driving, is one active from driving sensor-based system, preparation process is simple,
Large-area high-density functionalization integrated level is high, can greatly realize that function is integrated, miniature portable, while can also reduce
Cost.In addition, sensing system can also be prepared into flexible device, it is applied to Grazing condition wearable device and biologic medical is led
Domain.In the application environment for having light, electric energy is provided using photovoltaic cell, in unglazed application environment, using nano generator
Electric energy is provided, flexibility and the stability of the supply of sensing system power supply are improved.
A kind of dynamic gas sensor system of self-powered is also provided in the present embodiment, the structural schematic diagram of gas sensor system is such as
Shown in Figure 16.In the present embodiment, gas sensor is the gas sensor based on organic effect gas sensing crystals pipe, such as Figure 17
It is shown, including the first substrate 171, the first insulating layer 172, the first semiconductor layer 173 and the 8th electrode 174.Wherein, the first substrate
171 be the substrate with gate electrode, can be to be coated with the substrate of glass of ITO or to be coated with the flexible substrates of ITO, such as PET bases
Bottom；First insulating layer 172 can be polymer material polymethyl methacrylate (PMMA) etc., or use metal oxide,
Such as tantalum pentoxide (Ta2O5)；First semiconductor layer 173 is organic gas-sensitive semiconductor layer, can use pentacene etc.；8th electricity
Pole 174 is the pole source and drain (S, D), can use the metals such as the gold, silver either nonmetallic materials such as carbon nanotube, graphene or ITO
Equal transparent electrode materials are prepared.
Power supply connects crystalline substance respectively to the gas sensor power supply based on organic field effect tube, the power supply anode cathode of power supply
The source electrode (S) of body pipe and drain electrode (D), grid is controlled by nano generator.Control gas sensor grid nano generator and
There is provided power supply nano generator type can unanimously can not also be consistent, as needed rationally setting.With extraneous ring
The conductivity of the change of border gas componant, semiconductor layer changes, under the action of nano generator, the increase of grid voltage
Keep the conductivity variations of semiconductor layer more obvious.So the curent change between S the and D electrodes of transistor is apparent, to open up
Sensing characteristics to gas in external environment are shown.Since different organic materials is different to the sensitivity of gas, Ke Yixuan
Different organic materials is selected to detect gas with various.
A kind of driving electromagnetic sensor system certainly is also provided in the present embodiment, the structural schematic diagram of electromagnetic sensor system is such as
Shown in Figure 18.In the present embodiment, electromagnetic sensor is the electromagnetic sensor based on organic field effect tube, such as Figure 19 institutes
Show, including the second substrate 191, second insulating layer 192, the second semiconductor layer 193 and the 9th electrode 194.Wherein, the second substrate
191 be the substrate with gate electrode, can be to be coated with the substrate of glass of ITO or to be coated with the flexible substrates of ITO, such as PET bases
Bottom；Second insulating layer 192 can be polymer material polymethyl methacrylate (PMMA) etc., or use metal oxide,
Such as tantalum pentoxide (Ta2O5), in order to realize the sensing to electromagnetism, doped ferroferric oxide is answered in second insulating layer 192
(Fe3O4)；Second semiconductor layer 193 is organic semiconductor layer, can use the organic materials such as pentacene；9th electrode 194 is source
Drain electrode can use metals and the carbon nanotubes such as gold, silver, the transparent electrodes material such as the nonmetallic materials such as graphene or ITO
Material is prepared.
Power supply connects crystalline substance respectively to the electromagnetic sensor power supply based on organic field effect tube, the power supply anode cathode of power supply
The pole the S of body pipe, D, grid are controlled by nano generator.It controls the nano generator of electromagnetic sensor grid and receiving for power supply is provided
Rice generator type can unanimously can not also be consistent, as needed rationally setting.First by nano generator by grid
Pole tension regulates and controls near threshold voltage, with the change of external environment electromagnetism intensity, the Fe in insulating layer3O4Polarization is generated to make
With leading to the grid voltage for occurring polarizing out, significant changes occur for the current strength of semiconductor layer, so the S and D of transistor
Curent change between electrode is apparent, to show the sensing characteristics to electromagnetic change in external environment.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (13)
1. a kind of sensing system, which is characterized in that including：Sensor and the power supply being connect with the sensor, the electricity
Source includes photovoltaic cell and impulse generating unit, the cathode of the positive output end and the photovoltaic cell of the impulse generating unit
Connection, the negative sense output end of the impulse generating unit are connect with the anode of the photovoltaic cell, and the power supply is for providing institute
State electric energy needed for sensor.
2. sensing system according to claim 1, which is characterized in that the impulse generating unit includes nano generator
And rectification unit.
3. sensing system according to claim 2, which is characterized in that the rectification unit is that halfwave rectifier or all-wave are whole
Stream.
4. sensing system according to claim 1, which is characterized in that further include：
Voltage regulation unit, the voltage regulation unit are connect with the sensor parallel.
5. sensing system according to claim 1, which is characterized in that the photovoltaic cell be flexible photovoltaic battery or
Photovoltaic cell group.
6. according to any sensing systems of claim 1-5, which is characterized in that the photovoltaic cell is flexible perovskite
Photovoltaic cell.
7. sensing system according to claim 6, which is characterized in that it is described flexibility perovskite photovoltaic cell include：The
One flexible base layer, first electrode layer, the first electron transfer layer, light-absorption layer, the first hole transmission layer and the second electrode lay；Its
In, the first electrode layer is set to the upper substrate surface of first flexible base layer, the first electron transfer layer setting
In in the first electrode layer, the light-absorption layer is set on first electron transfer layer, and first hole transmission layer is set
It is placed on the light-absorption layer, the second electrode lay is set on first hole transmission layer.
8. according to any sensing systems of claim 1-7, which is characterized in that the sensor be photoelectric sensor,
Gas sensor, pressure sensor, magnetometric sensor or temperature sensor.
9. sensing system according to claim 8, which is characterized in that the photoelectric sensor is two pole of organic photosensitive
Pipe.
10. sensing system according to claim 9, which is characterized in that the organic photosensitive diode includes：Second is soft
Property basal layer, third electrode layer, electronic barrier layer, the first photosensitive layer, hole blocking layer and the 4th electrode layer；Wherein, described
Three electrode layers are set to the upper substrate surface of second flexible base layer, and the electronic barrier layer is set to the third electrode
On layer, first photosensitive layer is set on the electronic barrier layer, and the hole blocking layer is set to first photosensitive layer
On, the 4th electrode layer is set on the hole blocking layer.
11. sensing system according to claim 10, which is characterized in that when the photoelectric sensor is organic photosensitive two
When pole pipe, further include：Switch unit, the switch unit are connect with the photovoltaic cell, are connect with the impulse generating unit,
Also it is connect with the sensor.
12. sensing system according to claim 11, which is characterized in that the switch unit includes first switch,
Two switches and third switch, wherein
The first end of the first switch is connect with the positive output end of the impulse generating unit, and the second of the first switch
End is connect with the cathode of the photovoltaic cell, the 4th electrode at the third end of the first switch and the organic photosensitive diode
Layer connection；
The first end of the second switch is connect with the 4th electrode layer of the organic photosensitive diode, and the of the second switch
Two ends are connect with the anode of the photovoltaic cell；
The first end of third switch is connect with the negative sense output end of the impulse generating unit, also with the organic photosensitive two
The third electrode layer of pole pipe connects, and the second end of the third switch is connect with the anode of the photovoltaic cell, and the third is opened
The third end of pass is connect with the cathode of the photovoltaic cell.
13. according to any sensing systems of claim 1-12, which is characterized in that further include：
Display unit, the display unit are connect with the sensor series.
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