CN109443630A - A kind of pressure sensor based on QLED luminescent device - Google Patents
A kind of pressure sensor based on QLED luminescent device Download PDFInfo
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- CN109443630A CN109443630A CN201811282603.XA CN201811282603A CN109443630A CN 109443630 A CN109443630 A CN 109443630A CN 201811282603 A CN201811282603 A CN 201811282603A CN 109443630 A CN109443630 A CN 109443630A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The present invention proposes a kind of pressure sensor based on QLED luminescent device, including connects electric substrate, function substrate；It connects electric substrate and function substrate is PET flexible base board；It connects and is covered with electrode layer on electric substrate；ITO layer is covered on function substrate；Functional layer is covered in the ITO layer；The functional layer includes multiple layerings；Multiple layerings of functional layer successively include hole injection layer, hole transmission layer, luminescent layer and electron transfer layer from bottom to top；The functional layer is contacted with hole injection layer with the ITO layer of function substrate；The electron transfer layer and electrode layer of functional layer close to；When connecing electric substrate or function substrate is pressurized, the deformation of compression position changes the contact condition of electrode layer and electron transfer layer, and electrode layer charge reaches luminescent layer and the luminescent layer at compression position is shone；Present invention incorporates the electroluminescence characters of QLED luminescent device, so that completing the real time monitoring of pressure position by optical signal while conducting pressure, repeated height, fast response time, highly reliable, structure is simple.
Description
Technical field
The present invention relates to sensor technical field, especially a kind of pressure sensor based on QLED luminescent device.
Background technique
Sensor is a kind of detection device, can experience measured information, and the information that can will be experienced, by a set pattern
Rule is for conversion into electric signal or the information output of other required forms, to meet transmission, processing, storage, the display, record of information
With control etc. require.Pressure sensor is a kind of sensor the most commonly used in industrial practice, is widely used in various industry
Automatic control environment, be related to water conservancy and hydropower, railway traffic, intelligent building, production automatic control, etc. numerous industries, but existing sensor is big
All it is not easy to directly be read relative to optical signal as transmission medium using electric signal.
QLED is a kind of self luminous novel display panel, because using quantum dot as luminescent material have colour gamut extensively, color
The features such as with high purity, and the QLED display reaction time is short, luminous efficiency is high, driving voltage is low and bendability characteristics, makes
Obtaining it becomes flat-panel monitor of next-generation mainstream.
The advantages of in view of pressure above sensor and QLED, attempts to prepare QLED photophore using solwution method in the prior art
Part, so that the monitoring of pressure real time position is completed by optical signal while conducting pressure, repeatability height, response speed
Fastly, highly reliable, structure is simple.
The problem of existing in view of the above technology, the present invention is intended to provide a kind of with the pressure sensing for being more readily transported signal
Device, to solve shortcoming in the prior art.
Summary of the invention
The present invention proposes a kind of pressure sensor based on QLED luminescent device, combines the electroluminescent hair of QLED luminescent device
Light characteristic, so that completing the real time monitoring of pressure position by optical signal while conducting pressure, repeatability is high, response is fast
Spend that fast, highly reliable, structure is simple.
The present invention uses following technical scheme.
A kind of pressure sensor based on QLED luminescent device, the pressure sensor include connecing electric substrate, function substrate；
It is described to connect electric substrate and function substrate is PET flexible base board；Described connect is covered with electrode layer on electric substrate；On the function substrate
It is covered with ITO layer；Functional layer is covered in the ITO layer；The functional layer includes multiple layerings；Multiple layerings of functional layer from lower and
On successively include hole injection layer, hole transmission layer, luminescent layer and electron transfer layer；The functional layer is with hole injection layer and function
The ITO layer contact of energy substrate；The electron transfer layer and electrode layer of functional layer close to；When connecing electric substrate or function substrate is pressurized,
The deformation of compression position changes the contact condition of electrode layer and electron transfer layer, and electrode layer charge reaches luminescent layer and to be pressurized
The luminescent layer at position shines.
The preparation process of the pressure sensor includes function substrate preparation, connects electric substrate preparation and substrate assembly；
The preparation process of the function substrate successively includes following operation；
S1, the PET flexible base board for being covered with ITO is pre-processed；
S2, each layering for forming functional layer by the method for spin coating or blade coating on PET flexible base board；Function substrate is made；
The preparation for connecing electric substrate includes following operation；
S3: with coating process formation metal electrode or with spin coating/doctor blade process on the PET flexible base board of no coating ITO
Form membrane electrode；
The substrate assembly includes following operation；
S4: the flexible pet substrate for being attached with electrode is tipped upside down on the pet substrate for having formed each functional layer, and in surrounding
It is fixed with encapsulating material.
The pretreatment that the described pair of PET flexible base board for being covered with ITO carries out includes cleaning treatment and plasma treatment.
The technique for forming metal electrode is evaporation coating, and the technique for forming membrane electrode is spin coating proceeding or scrapes
Technique is applied, the membrane electrode is metal nanowire thin-films electrode.
Each layering of the functional layer is in film shape；Each layering of the functional layer uses spin coating or knife coating procedure
Molding.
The luminescent layer is shone with QLED illuminating part；The QLED illuminating part is quantum dot.
The sheet resistance of the ITO layer of the function substrate is 320 Ω/.
The electrode layer connect on electric substrate is with the molding silver electrode layer of coating process.
The thickness range of the silver electrode layer is 100-200nm.
The hole injection layer selects the preparation of PEDOT:PSS solution spin-coating film；The hole transmission layer is with the rotation of TFB solution
Paint film preparation；The luminescent layer is with the preparation of quantum dot solution spin-coating film；The electron transfer layer is with Zinc oxide nanoparticle
The preparation of solution spin-coating film.
The present invention has the advantages that
1) electroluminescence characters of QLED luminescent device are utilized in novel pressure sensor of the invention, so that in conducting pressure
The monitoring of real-time pressure position is completed by shining simultaneously, fast response time, structure are simple, to be not easy to read pressure position
Pressure position is monitored under the conditions of the closed environment set provides feasibility.
2) novel pressure sensor of the invention by select coating be made each functional layer and evaporation coating legal system obtain it is golden
Belong to electrode, structure is simple, and repeatability is high, highly reliable, easily operated.
Detailed description of the invention
The present invention is described in more detail with reference to the accompanying drawings and detailed description:
Attached drawing 1 is the working principle of the invention schematic diagram；
Attached drawing 2 is structural schematic diagram of the invention；
In figure: 110- function substrate；120- hole injection layer；130- hole transmission layer；140- luminescent layer；150- electron-transport
Layer；160- electrode layer；170- connects electric substrate；180- inner wall posts the closed pressure vessel of pressure sensor of the present invention；
190- pressure sensor.
Specific embodiment
As shown in Figs. 1-2, a kind of pressure sensor based on QLED luminescent device, the pressure sensor include connecing electric base
Plate 170, function substrate 110；It is described to connect electric substrate 170 and function substrate 110 is PET flexible base board；It is described to connect on electric substrate
It is covered with electrode layer 160；ITO layer is covered on the function substrate；Functional layer is covered in the ITO layer；The functional layer includes more
A layering；Multiple layerings of functional layer successively include hole injection layer 120, hole transmission layer 130, luminescent layer 140 from bottom to top
With electron transfer layer 150；The functional layer is contacted with hole injection layer with the ITO layer of function substrate；The electron-transport of functional layer
Layer and electrode layer close to；When connecing electric substrate or function substrate is pressurized, the deformation of compression position makes electrode layer and electron transfer layer
Contact condition variation, electrode layer charge reach luminescent layer make compression position luminescent layer shine.
The preparation process of the pressure sensor includes function substrate preparation, connects electric substrate preparation and substrate assembly；
The preparation process of the function substrate successively includes following operation；
S1, the PET flexible base board for being covered with ITO is pre-processed；
S2, each layering for forming functional layer by the method for spin coating or blade coating on PET flexible base board；Function substrate is made；
The preparation for connecing electric substrate includes following operation；
S3: with coating process formation metal electrode or with spin coating/doctor blade process on the PET flexible base board of no coating ITO
Form membrane electrode；
The substrate assembly includes following operation；
S4: the flexible pet substrate for being attached with electrode is tipped upside down on the pet substrate for having formed each functional layer, and in surrounding
It is fixed with encapsulating material.
The pretreatment that the described pair of PET flexible base board for being covered with ITO carries out includes cleaning treatment and plasma treatment.
The technique for forming metal electrode is evaporation coating, and the technique for forming membrane electrode is spin coating proceeding or scrapes
Technique is applied, the membrane electrode is metal nanowire thin-films electrode.
Each layering of the functional layer is in film shape；Each layering of the functional layer uses spin coating or knife coating procedure
Molding.
The luminescent layer is shone with QLED illuminating part；The QLED illuminating part is quantum dot.
The sheet resistance of the ITO layer of the function substrate is 320 Ω/.
The electrode layer connect on electric substrate is with the molding silver electrode layer of coating process.
The thickness range of the silver electrode layer is 100-200nm.
The hole injection layer selects the preparation of PEDOT:PSS solution spin-coating film；The hole transmission layer is with the rotation of TFB solution
Paint film preparation；The luminescent layer is with the preparation of quantum dot solution spin-coating film；The electron transfer layer is with Zinc oxide nanoparticle
The preparation of solution spin-coating film.
This example in step s 2, with the revolving speed spin coating PEDOT:PSS solution of 3000r on PET flexible base board, and with
120 degree of annealing temperature 20 minutes；With the revolving speed spin coating TFB solution of 3000r, and with 120 degree of annealing temperature 20 minutes；With
The revolving speed spin coating green quantum dot solution of 2000r, and with 65 degree of annealing temperature 15 minutes；With the revolving speed spin coating oxygen of 1700r
Change zinc nanoparticles solution, and with 65 degree of annealing temperature 20 minutes.
Hole transmission layer is prepared with being dissolved in chlorobenzene concentration as the TFB solution of 8mg/ml, and luminescent layer is to be dissolved in normal octane
Prepared by the green quantum dot solution that concentration is 15mg/ml, electron transfer layer is molten for the Zinc oxide nanoparticle of 6mg/ml with concentration
Liquid preparation.
In an implementation, red quantum dot, green quantum dot and amount of blue also can be selected as the quantum dot of luminescent material
It is sub-, it is selected from one or more of II-VI or iii-v.
As shown in Figure 1, sensor of the present invention is after being placed in pressure vessel, when charged pressure gas in pressure vessel or
After liquid, pressure sensor is pressurized, and after pressure is raised to preset value electrode layer is contacted with electron transfer layer, electrode layer charge
Reach luminescent layer make compression position luminescent layer shine, observer through transparent chamber wall observe sensor shine after,
It is believed that the pressure in pressure vessel has been not less than preset value.
Claims (10)
1. a kind of pressure sensor based on QLED luminescent device, it is characterised in that: the pressure sensor includes connecing electric substrate
(170), function substrate (110)；It is described to connect electric substrate and function substrate is PET flexible base board；Described connect is covered on electric substrate
Electrode layer (160)；ITO layer is covered on the function substrate；Functional layer is covered in the ITO layer；The functional layer includes multiple
Layering；Multiple layerings of functional layer successively include hole injection layer (120), hole transmission layer (130), luminescent layer from bottom to top
(140) and electron transfer layer (150)；The functional layer is contacted with hole injection layer with the ITO layer of function substrate；The electricity of functional layer
Sub- transport layer and electrode layer close to；When connecing electric substrate or function substrate is pressurized, the deformation of compression position makes electrode layer and electronics
The contact condition of transport layer changes, and electrode layer charge reaches luminescent layer and the luminescent layer at compression position is shone.
2. a kind of pressure sensor based on QLED luminescent device according to claim 1, it is characterised in that: the pressure
The preparation process of sensor includes function substrate preparation, connects electric substrate preparation and substrate assembly；
The preparation process of the function substrate successively includes following operation；
S1, the PET flexible base board for being covered with ITO is pre-processed；
S2, each layering for forming functional layer by the method for spin coating or blade coating on PET flexible base board；Function substrate is made；
The preparation for connecing electric substrate includes following operation；
S3: with coating process formation metal electrode or with spin coating/doctor blade process on the PET flexible base board of no coating ITO
Form membrane electrode；
The substrate assembly includes following operation；
S4: the flexible pet substrate for being attached with electrode is tipped upside down on the pet substrate for having formed each functional layer, and in surrounding
It is fixed with encapsulating material.
3. a kind of pressure sensor based on QLED luminescent device according to claim 2, it is characterised in that: described pair covers
The pretreatment for having the PET flexible base board of ITO to carry out includes cleaning treatment and plasma treatment.
4. a kind of pressure sensor based on QLED luminescent device according to claim 2, it is characterised in that: the formation
The technique of metal electrode is evaporation coating, and the technique for forming membrane electrode is spin coating proceeding or doctor blade process, the film
Electrode is metal nanowire thin-films electrode.
5. a kind of pressure sensor based on QLED luminescent device according to claim 1, it is characterised in that: the function
Each layering of layer is in film shape；Each layering of the functional layer is formed using spin coating or knife coating procedure.
6. a kind of pressure sensor based on QLED luminescent device according to claim 1, it is characterised in that: described to shine
Layer is shone with QLED illuminating part；The QLED illuminating part is quantum dot.
7. a kind of pressure sensor based on QLED luminescent device according to claim 1, it is characterised in that: the function
The sheet resistance of the ITO layer of energy substrate is 320 Ω/.
8. a kind of pressure sensor based on QLED luminescent device according to claim 1, it is characterised in that: described to connect electricity
Electrode layer on substrate is with the molding silver electrode layer of coating process.
9. a kind of pressure sensor based on QLED luminescent device according to claim 8, it is characterised in that: the silver electricity
The thickness range of pole layer is 100-200nm.
10. a kind of pressure sensor based on QLED luminescent device according to claim 1, it is characterised in that: the sky
Cave implanted layer selects the preparation of PEDOT:PSS solution spin-coating film；The hole transmission layer is with the preparation of TFB solution spin-coating film；Institute
Luminescent layer is stated with the preparation of quantum dot solution spin-coating film；The electron transfer layer is with Zinc oxide nanoparticle solution spin-coating film system
It is standby.
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| CN201811282603.XA CN109443630B (en) | 2018-10-31 | 2018-10-31 | Pressure sensor based on QLED light-emitting device |
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| CN201811282603.XA CN109443630B (en) | 2018-10-31 | 2018-10-31 | Pressure sensor based on QLED light-emitting device |
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| CN109443630B CN109443630B (en) | 2020-11-10 |
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| CN114242914B (en) * | 2021-12-17 | 2024-03-05 | 固安翌光科技有限公司 | OLED device |
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