CN106653793A - Nano light-emitting array and manufacturing method thereof, and nano light-emitting device - Google Patents
Nano light-emitting array and manufacturing method thereof, and nano light-emitting device Download PDFInfo
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- CN106653793A CN106653793A CN201610094661.4A CN201610094661A CN106653793A CN 106653793 A CN106653793 A CN 106653793A CN 201610094661 A CN201610094661 A CN 201610094661A CN 106653793 A CN106653793 A CN 106653793A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Abstract
The invention, which relates to the technical field of the micro nano energy, discloses a nano light-emitting array and a manufacturing method thereof, and a nano light-emitting device. The nano light-emitting array comprises a substrate, a lower part electrode formed on the substrate, a nano light-emitting control layer formed on the lower part electrode, an organic light-emitting layer formed on the nano light-emitting control layer, and an upper part electrode formed on the organic light-emitting layer. With the nano light-emitting array and the nano light-emitting device, the nano light-emitting control layer can obtain information of the stress applied on the layer, so that reaction to the applied stress can be made rapidly and thus adjustment of the light-emitting strength of the n organic light-emitting layer can be realized.
Description
Technical field
The present invention relates to micro-nano energy technology field, in particular it relates to a kind of nano luminescent array and its manufacture method with
And nano luminescent device.
Background technology
Pressure transducer based on ZnO nano-wire piezoelectric effect causes in recent years the great interest of people.Using piezoelectricity
Electronic effect is gone to control the generation of carrier, transmission, is separated or compound, so as to improve opto-electronic device performance.
For example, a kind of pressure transducer based on array ZnO nano-wire piezoelectron effect of the prior art can
With increase resolution to 120 microns.Another kind is based on p-type gallium nitride layer extension patterned growth ZnO nano-wire light-emitting diodes
The pressure transducer sensor of pipe array realizes 2.7 microns of resolution, is to reach micron order superman's class skin first in the world
The stress induction system of skin resolution, the research causes people and greatly pays close attention to.But, it is this based on patterning ZnO nano
The hetero-junctions LED array of line still has significant limitation.First it is that inorganic semiconductor nanometer material species is less, especially makees
P-type material for hole transport is less, so that the manufacture of the sensor is limited；Next to that inorganic nano material pliability compared with
Difference, the application in terms of flexible device is not enough.This 2 points all significantly limit based on ZnO nano-wire piezoelectricity optoelectronics
The development of the piezoelectric transducer of effect, the especially development of large area flexible array device and application.
The content of the invention
It is an object of the invention to provide a kind of nano luminescent array and its manufacture method and nano luminescent device, to solve
Above-mentioned the problems of the prior art.
To achieve these goals, the present invention provides a kind of nano luminescent array, wherein, the nano luminescent array includes：
Substrate；Lower electrode, forms over the substrate；Nano luminescent key-course, is formed on the lower electrode；Organic light emission
Layer, is formed on the nano luminescent key-course；And upper electrode, it is formed on the organic luminous layer.
The present invention also provides a kind of nano luminescent device, wherein, the device includes above-mentioned nano luminescent array.
The present invention also provides a kind of method of manufacture nano luminescent array, wherein, the method includes：Prepare substrate；Institute
State and formed on substrate lower electrode；Nano luminescent key-course is formed on the lower electrode；In the nano luminescent key-course
Upper formation organic luminous layer；And form upper electrode on the organic luminous layer.
By above-mentioned technical proposal, can be by light emitting control layer prepared by nano material to being prepared using organic material
Luminescent layer carries out light emitting control, this is because nano luminescent key-course can obtain the stress information that the external world is applied to this layer,
Make a response such that it is able to the stress rapidly to being applied, and then realize the regulation of the luminous intensity to organic luminous layer, carry
The luminous efficiency of high device, makes device performance more flexibly controllable (it is, nano luminescent array of the present invention and nanometer
The luminous intensity of light-emitting device can be with change in pressure).
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Description of the drawings
Accompanying drawing is, for providing a further understanding of the present invention, and to constitute the part of description, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the structure chart of the nano luminescent array according to one embodiment of the present invention；
Fig. 2 is the flow chart of the method for the manufacture nano luminescent array according to one embodiment of the present invention；
Fig. 3 A are scanning electron microscope (SEM) photos of the nano luminescent array according to one embodiment of the present invention
Schematic diagram；
Fig. 3 B are the schematic diagrams of the illuminating microscope photo of the nano luminescent array according to one embodiment of the present invention；
Fig. 3 C are the schematic diagrams of the light intensity distributions of the nano luminescent array according to one embodiment of the present invention；
Fig. 4 is the current -voltage curve figure of the nano luminescent array according to one embodiment of the present invention；
Fig. 5 is the luminescent spectrum figure according to the nano luminescent array of one embodiment of the present invention under different voltages；
Fig. 6 is the luminous intensity variations after single-point is stressed in nano luminescent array according to one embodiment of the present invention
Figure；
Fig. 7 A are scanning electron microscope (SEM) photos of the nano luminescent array according to another embodiment of the present invention
Schematic diagram；
Fig. 7 B are the schematic diagrams of the illuminating microscope photo of the nano luminescent array according to another embodiment of the present invention；
Fig. 7 C are the schematic diagrams of the light intensity distributions of the nano luminescent array according to another embodiment of the present invention；
Fig. 8 A are scanning electron microscope (SEM) photos of the nano luminescent array according to another embodiment of the present invention
Schematic diagram；
Fig. 8 B are the schematic diagrams of the illuminating microscope photo of the nano luminescent array according to another embodiment of the present invention；
Fig. 8 C are the schematic diagrams of the light intensity distributions of the nano luminescent array according to another embodiment of the present invention；
Fig. 9 A are scanning electron microscope (SEM) photos of the nano luminescent array according to another embodiment of the present invention
Schematic diagram；
Fig. 9 B are the schematic diagrams of the illuminating microscope photo of the nano luminescent array according to another embodiment of the present invention；
Fig. 9 C are the schematic diagrams of the light intensity distributions of the nano luminescent array according to another embodiment of the present invention；
Figure 10 A are the luminous photos of the nano luminescent array according to one embodiment of the present invention；
Figure 10 B are the spectrum pictures of the nano luminescent array according to one embodiment of the present invention；
Figure 11 A are the luminous photos of the nano luminescent array according to another embodiment of the present invention；And
Figure 11 B are the spectrum pictures of the nano luminescent array according to another embodiment of the present invention.
Description of reference numerals
The dielectric materials layer of 1 substrate, 2 lower electrode 3
4 nano wires or the organic cavity transmission layer of nanometer stick array 5
The organic electron transport layer of 6 organic electronic barrier layer, 7 organic light emission body layer 8
The organic luminous layer of 9 upper electrode, 10 nano luminescent key-course 11
Specific embodiment
The specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The specific embodiment stated is merely to illustrate and explains the present invention, is not limited to the present invention.
Fig. 1 is the structure chart of the nano luminescent array according to one embodiment of the present invention.
As shown in figure 1, the nano luminescent array that one embodiment of the present invention is provided includes：Substrate 1；Lower electrode 2, shape
Into on the substrate 1；Nano luminescent key-course 10, is formed in 2 on the lower electrode；Organic luminous layer 11, is formed in institute
State on nano luminescent key-course 10；And upper electrode 9, it is formed on the organic luminous layer 11.
Wherein, the upper electrode 9 in the nano luminescent array can be Al/LiF electrodes, and lower electrode can be ITO
Electrode.
By above-mentioned technical proposal, can be by light emitting control layer prepared by nano material to being prepared using organic material
Luminescent layer carries out light emitting control, this is because nano luminescent key-course can obtain the stress information that the external world is applied to this layer,
Make a response such that it is able to the stress rapidly to being applied, and then realize the regulation of the luminous intensity to organic luminous layer, carry
The luminous efficiency of high device, makes device performance more flexibly controllable (it is, nano luminescent array of the present invention and nanometer
The luminous intensity of light-emitting device can be with change in pressure).
According to one embodiment of the present invention, the nano luminescent key-course 10 can include nano wire or nanometer stick array
4 and by the gap of the nano wire or nanometer stick array fill transparent dielectric material formed dielectric materials layer 3, wherein
The material of the nano wire or nanometer stick array 4 can be piezoelectric.
According to one embodiment of the present invention, the piezoelectric can be the material of wurtzite structure, preferably nitrogenize
Gallium, GaAs or Zinc Oxide (ZnO).The transparent dielectric material can be high molecular polymer or silicon oxide.
According to one embodiment of the present invention, in the nano wire or nanometer stick array 4, each array element is nano wire
Cluster or nanometer rods cluster, the diameter range of each array element can be the length of 100nm to 5um, each nano wire or nanometer rods
Degree may range from 1um to 10um, and the interstice coverage between two neighboring array element can be 2um to 200um.
According to one embodiment of the present invention, the organic luminous layer 11 can include organic cavity transmission layer 5, Organic Electricity
Sub- barrier layer 6, organic light emission body layer 7 and organic electron transport layer 8.For example, organic luminous layer 11 can be organic light emission two
Pole pipe (OLED) structure.
Wherein, the organic cavity transmission layer 5, the organic electronic barrier layer 6, the organic light emission body layer 7 and institute
Stating the material of organic electron transport layer 8 can be organic semiconducting materials.
Understand that nano luminescent array of the present invention can be a kind of meeting with piezoelectric response based on the above
LED array, can be greatly improved the luminous efficiency and luminous intensity of device.
Wherein, the material of the organic cavity transmission layer 5 can be 4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls)
Aniline] ([4,4'-cyclohexylidene bis [N, N-bis (p-tolyl) aniline] are (TAPC)), the organic electronic
The material on barrier layer 6 can be 4,4', 4 "-three (carbazole -9- bases) triphenylamine (tris (4-carbazoyl-9-ylphenyl)
Amine (TCTA)), the material of the organic light emission body layer 7 can be -9- carbazyls the benzene (1,3-Di-9- of 1,3- bis-
Carbazolylbenzene (mCP)), and the material of the organic electron transport layer 8 can be 1,3,5- tri- (1- phenyl-
1H- benzimidazolyl-2 radicals-yl) benzene ((1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi)).
Wherein, the organic light emission body layer 7 can be able to be doped with organic fluorescence molecule, the organic fluorescence molecule
Three (2- phenylpyridine-C2, N) close iridium (III) (Tris (2-phenylpyridinato-C2, N) iridium (III) (Ir
(ppy) 3)), three (1- phenyl-isoquinolin-C2, N) close iridium (III) (Tris (1-phenylisoquinolinato-C2, N)
Iridium (III) (Ir (piq) 3)) or two (4,6- difluorophenyl pyridinato-C2, N) pyridinecarboxylics conjunction iridium (Tris (1-
phenylisoquinolinato-C2,N)iridium(III)(Ir(piq)3))。
Wherein, the amount of the organic fluorescence molecule for being adulterated can be 5wt.%～8wt.%.
So that the material of the nano wire or nanometer stick array 4 is as ZnO as an example, the growth of ZnO nano-wire or nanometer rods can be with
Method control position and size using photoetching, such that it is able to realize the regulation of nanoscale luminous position.The institute of organic luminous layer 11
Selecting for the material category of doping can be with the glow color of adjusting means, it is, different types of material correspondence is different sending out
Light color.When extraneous stress are put on the surface of the nano luminescent key-course 10 being made up of ZnO nano-wire or nanometer stick array
When, because non-uniform Distribution of the stress on the device surface causes the piezoelectric electro of the generation on the piezoelectric of each luminous point
Potential field it is of different sizes so that described in base pixel unit each luminous point luminous intensity produce it is different degrees of
Change.Nano luminescent array can be obtained by the change of each pixel luminous intensity in this nano wire or nanometer stick array
The stress information applied on the surface of device, and nano luminescent array of the invention (i.e. array of pressure sensors) can
Made a response with the extraneous stress rapidly to applying.
According to one embodiment of the present invention, the thickness range of the organic cavity transmission layer 5 can be for 150nm extremely
250nm；The thickness range on the organic electronic barrier layer 6 can be 5nm to 15nm, preferably 10nm；The organic light emission sheet
The thickness range of body layer 7 can be 30nm to 100nm, preferably 50nm；The thickness range of the organic electron transport layer 8 can be with
For 30nm to 100nm, preferably 50nm.
In the above-described embodiment, the substrate 1 can be flexible transparent substrate (for example, PET/ITO substrates) or rigidity
Transparent substrates (for example, glass/ITO substrates).
Organic Light Emitting Diode has the advantages that luminous efficiency height, glow color can easily be accommodated.By Organic Light Emitting Diode
The Dominant Facies such as the nano-wire array controllable growth of feature and such as ZnO and piezoelectric properties are combined, and are partly led with piezoelectric effect regulation and control
Based on body nano photoelectric device efficiency principle, develop the nano wire of aligned patterned growth such as ZnO in flexible substrate 1
Array is passed using organic LED structure as the pressure sensitive layer and carrier injection layer of heterojunction device as carrier
Defeated layer and luminescent layer, prepare the above-mentioned flexible nano organic LED array with piezoelectric effect of the present invention.Also, the present invention
Nano luminescent array structure and preparation process in above-mentioned embodiment is simple, can be with cost-effective.
Present invention also offers a kind of nano luminescent device, wherein, the device includes receiving described in above-mentioned embodiment
Rice light emitting array.
Fig. 2 is the flow chart of the method for the manufacture nano luminescent array according to one embodiment of the present invention.
As shown in Fig. 2 the method for manufacturing nano luminescent array that one embodiment of the present invention is provided includes：
S100, prepares substrate；
S102, forms over the substrate lower electrode；
S104, forms nano luminescent key-course on the lower electrode；
S106, on the nano luminescent key-course organic luminous layer is formed；And
S108, on the organic luminous layer upper electrode is formed.
Wherein, the material of the lower electrode can be transparent by above-mentioned technical proposal, can be formed on substrate
Light emitting control layer is prepared using nano material on lower electrode, and luminescent layer is prepared with organic material on the light emitting control layer,
It is possible thereby to light emitting control is carried out to luminescent layer by light emitting control layer, this is because nano luminescent key-course can obtain extraneous right
The stress information that this layer is applied, makes a response such that it is able to the stress rapidly to being applied, and then realizes to organic light emission
The regulation of the luminous intensity of layer, improves the luminous efficiency of device, makes device performance more flexibly controllable (it is, institute of the present invention
The nano luminescent array stated and the luminous intensity of nano luminescent device can be with change in pressure).
According to one embodiment of the present invention, it is possible to use magnetron sputtering method forms over the substrate lower electrode.
In the method, step S104 includes：
S1040, using photoetching process dot matrix region is formed on the lower electrode；
S1042, nano wire or nanometer rods are grown to form nano wire or nanometer using hydro-thermal method in the dot matrix region
Rod array；And
S1044, fills transparent dielectric material and forms dielectric materials layer in the gap of the nano wire or nanometer stick array.
In the method, step S106 includes：
Organic hole transmission layer, organic can be sequentially formed on the nano wire or nanometer stick array using thermal evaporation deposition
Electronic barrier layer, organic light emission body layer and organic electron transport layer.
According to it is of the invention a kind of when embodiment, the organic light emission body layer can be doped with organic fluorescence molecule, institute
State organic fluorescence molecule can for three (2- phenylpyridine-C2, N) close iridium (III) (Tris (2-phenylpyridinato-C2,
N) iridium (III) (Ir (ppy) 3)), three (1- phenyl-isoquinolin-C2, N) close iridium (III) (Tris (1-
Phenylisoquinolinato-C2, N) iridium (III) (Ir (piq) 3)) or two (4,6- difluorophenyl pyridinato-C2,
N) pyridinecarboxylic closes iridium (Tris (1-phenylisoquinolinato-C2, N) iridium (III) (Ir (piq) 3)).Wherein,
The amount of the organic fluorescence molecule for being adulterated can be 5wt.%～8wt.%.
The method of manufacture nano luminescent array of the present invention is described with reference to example.
For example, PET substrate can first be prepared；Then ITO is prepared using the mode of magnetron sputtering over the substrate electric
Pole (lower electrode)；Dot matrix region (dot matrix of piezoelectric nanowire growth is formed in ITO electrode followed by the mode of photoetching
Region can be the region being made up of multiple circular holes, wherein, the diameter of the circular hole can be 20 μm, and two neighboring circular hole it
Between spacing can be 100 μm).In this example piezoelectric nanowire or nanometer rods can be ZnO nano-wire or ZnO nanorod,
Using Hydrothermal Growth；Afterwards can be using such as macromolecule PMMA insulant (transparent dielectric material) to nano wire or nanometer
Rod is embedded；Then it is sequentially prepared organic cavity transmission layer on nano wire or nanometer stick array using the mode of hot evaporation
(for example material can be 4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline], 4,4'-cyclohexylidene bis
[N, N-bis (p-tolyl) aniline] (TAPC), thickness can be 200nm), (for example, material can be with organic electronic barrier layer
For 4,4', 4 "-three (carbazole -9- bases) triphenylamines, tris (4-carbazoyl-9-ylphenyl) amine (TCTA), thickness can
Think 50nm), organic light emission body layer (for example, material can for -9- carbazyl the benzene of 1,3- bis-, 1,3-Di-9-
Three (2- phenylpyridine-C2, N) of doping close iridium (III), Tris (2- in carbazolylbenzene (mCP)
Phenylpyridinato-C2, N) iridium (III) (Ir (ppy) 3), thickness can be 50nm, and doping content can be
6wt.%), organic electron transport layer (for example, material can be 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene, 1,
3,5-Tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi), thickness can be 50nm)；Having afterwards
Upper electrode (for example, Al/LiF electrodes) is formed on machine electron transfer layer, its thickness can be 100nm；Then ITO electrode is connect
Positive source, by Al/LiF electrodes power cathode is connect, and applies more than 20 volts voltages.
Interchangeable, in addition to above-mentioned size, the diameter of circular hole can be 10 μm in dot matrix region, and two neighboring circle
Spacing between hole can be 15 μm；Or the diameter of circular hole can be 5 μm in dot matrix region, and between two neighboring circular hole
Spacing can be 15 μm；Or the diameter of circular hole can be 3 μm in dot matrix region, and the spacing between two neighboring circular hole can be with
For 8 μm.
The luminous situation of the nano luminescent array described in the above-mentioned embodiment of the present invention can be seen by microscope
Examine.Specifically, for example stress can be applied by three-D displacement platform, with micro- sem observation device luminance before and after stress is applied
Change, by take pictures and image processing software registering device single-point light intensity change, so as to obtain light intensity corresponding pressure change
Curve.After array light-emitting point is pressurized, piezoelectric effect produces polarization charge and changes the distribution of array energy level, drops hole injection barrier
It is low, so as to increased luminous intensity.Image procossing therein and curve matching can be using existing method in prior art
Do not obscure the present invention, the present invention repeats no more.
Fig. 3 A are scanning electron microscope (SEM) photos of the nano luminescent array according to one embodiment of the present invention
Schematic diagram；Fig. 3 B are the schematic diagrams of the illuminating microscope photo of the nano luminescent array according to one embodiment of the present invention；Figure
3C is the schematic diagram of the light intensity distributions of the nano luminescent array according to one embodiment of the present invention.In figure 3, dot matrix region
In the diameter of circular hole can be 20 μm, and the spacing between two neighboring circular hole can be 100 μm, and the fluorescence molecule of doping is
(Ir(ppy)3)。
The pressure-dependent current -voltage curve figure of nano luminescent array as shown in figure 4, and nano luminescent array in difference
Luminescent spectrum figure under voltage is as shown in Figure 5.In Figure 5, curve from top to bottom corresponds to respectively following magnitude of voltage：20V、21V、
22V, 23V, 24V, 25V, 26V, 27V, 28V and 29V.
Fig. 6 is the luminous intensity variations after single-point is stressed in nano luminescent array according to one embodiment of the present invention
Figure.
Similar with Fig. 3, Fig. 7 A are that the scanning electron of the nano luminescent array according to another embodiment of the present invention shows
The schematic diagram of micro mirror (SEM) photo；Fig. 7 B are the luminous micro- of the nano luminescent array according to another embodiment of the present invention
The schematic diagram of mirror photo；Fig. 7 C are the signals of the light intensity distributions of the nano luminescent array according to another embodiment of the present invention
Figure.The difference of Fig. 7 and Fig. 3 is that the diameter of the circular hole in dot matrix region can be 10 μm, and between two neighboring circular hole
Spacing can be 15 μm.
Similar with Fig. 3, Fig. 8 A are that the scanning electron of the nano luminescent array according to another embodiment of the present invention shows
The schematic diagram of micro mirror (SEM) photo；Fig. 8 B are the luminous micro- of the nano luminescent array according to another embodiment of the present invention
The schematic diagram of mirror photo；Fig. 8 C are the signals of the light intensity distributions of the nano luminescent array according to another embodiment of the present invention
Figure.The difference of Fig. 8 and Fig. 3 is that the diameter of the circular hole in dot matrix region can be 5 μm, and between two neighboring circular hole
Spacing can be 15 μm.
Similar with Fig. 3, Fig. 9 A are that the scanning electron of the nano luminescent array according to another embodiment of the present invention shows
The schematic diagram of micro mirror (SEM) photo；Fig. 9 B are the luminous micro- of the nano luminescent array according to another embodiment of the present invention
The schematic diagram of mirror photo；Fig. 9 C are the signals of the light intensity distributions of the nano luminescent array according to another embodiment of the present invention
Figure.The difference of Fig. 8 and Fig. 3 is that the diameter of the circular hole in dot matrix region can be 3 μm, and between two neighboring circular hole
Spacing can be 8 μm.
Similar with Fig. 3, Figure 10 A are the luminous photos of the nano luminescent array according to one embodiment of the present invention；Figure
10B is the spectrum picture of the nano luminescent array according to one embodiment of the present invention.The difference of Figure 10 and Fig. 3 is,
The fluorescence molecule of doping is (Ir (piq) 3).In Fig. 10, curve from top to bottom corresponds to respectively following magnitude of voltage：24V、26V、
28V, 30V and 32V.
Similar with Fig. 3, Figure 11 A are the luminous photos of the nano luminescent array according to another embodiment of the present invention；
Figure 11 B are the spectrum pictures of the nano luminescent array according to another embodiment of the present invention.The difference of Figure 11 and Fig. 3 exists
In the fluorescence molecule of doping is (FIrPic).In fig. 11, curve from top to bottom corresponds to respectively following magnitude of voltage：23V、27、
35V, 31V and 39V.
It will be appreciated by those skilled in the art that what the above-mentioned description with regard to material, size etc. was merely exemplary, not use
It is of the invention in limiting.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, but, the present invention is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the present invention, various letters can be carried out to technical scheme
Monotropic type, these simple variants belong to protection scope of the present invention.
It is further to note that each particular technique feature described in above-mentioned specific embodiment, in not lance
In the case of shield, can be combined by any suitable means.In order to avoid unnecessary repetition, the present invention to it is various can
The compound mode of energy is no longer separately illustrated.
Additionally, combination in any can also be carried out between a variety of embodiments of the present invention, as long as it is without prejudice to this
The thought of invention, it should equally be considered as content disclosed in this invention.
Claims (17)
1. a kind of nano luminescent array, wherein, the nano luminescent array includes：
Substrate；
Lower electrode, forms over the substrate；
Nano luminescent key-course, is formed on the lower electrode；
Organic luminous layer, is formed on the nano luminescent key-course；And
Upper electrode, is formed on the organic luminous layer.
2. nano luminescent array according to claim 1, wherein, the nano luminescent key-course includes nano wire or nanometer
Rod array and the dielectric materials layer by filling transparent dielectric material formation in the gap of the nano wire or nanometer stick array,
The material of wherein described nano wire or nanometer stick array is piezoelectric.
3. nano luminescent array according to claim 2, wherein, the piezoelectric for wurtzite structure material, it is excellent
Elect gallium nitride, GaAs or Zinc Oxide as.
4. the nano luminescent array according to Claims 2 or 3, wherein, each battle array in the nano wire or nanometer stick array
The diameter range of column unit for 100nm to 5um, nano wire or nanometer rods length range be 1um to 10um, two neighboring array
Interstice coverage between unit is 2um to 200um.
5. the nano luminescent array according to any one of claim 2-4, wherein, the transparent dielectric material is macromolecule
Polymer or silicon oxide.
6. the nano luminescent array according to any one of claim 2-5, wherein, the organic luminous layer includes organic sky
Cave transport layer, organic electronic barrier layer, organic light emission body layer and organic electron transport layer.
7. nano luminescent array according to claim 6, wherein, the organic cavity transmission layer, organic electronic resistance
The material of barrier, the organic light emission body layer and the organic electron transport layer is organic semiconducting materials.
8. the nano luminescent array according to claim 6 or 7, wherein, the material of the organic cavity transmission layer is 4,4'-
Cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline], the material on the organic electronic barrier layer is 4,4', 4 "-three (carbazole -9-
Base) triphenylamine, the material of the organic light emission body layer is the -9- carbazyl benzene of 1,3- bis-, and the organic electron transport layer
Material be 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene.
9. the nano luminescent array according to any one of claim 6-8, wherein, the organic light emission body layer doped with
Organic fluorescence molecule, the organic fluorescence molecule is that three (2- phenylpyridine-C2, N) close iridium (III), three (1- phenyl-isoquinolin-
C2, N) close iridium (III) or two (4,6- difluorophenyl pyridinato-C2, N) pyridinecarboxylics conjunction iridium.
10. nano luminescent array according to claim 9, wherein, the amount of the organic fluorescence molecule for being adulterated is 5wt.%
～8wt.%.
The 11. nano luminescent arrays according to any one of claim 6-10, wherein, the thickness of the organic cavity transmission layer
Degree scope is 150nm to 250nm, and the thickness range on the organic electronic barrier layer is 5nm to 15nm, the organic light emission body
The thickness range of layer is 30nm to 100nm, and the thickness range of the organic electron transport layer is 30nm to 100nm.
The 12. nano luminescent arrays according to any one of claim 1-11, wherein, the substrate is flexible transparent substrate
Or rigid transparent substrate.
A kind of 13. nano luminescent devices, wherein, the device includes the nano luminescent battle array any one of claim 1-12
Row.
A kind of 14. methods of manufacture nano luminescent array, wherein, the method includes：
Prepare substrate；
Lower electrode is formed over the substrate；
Nano luminescent key-course is formed on the lower electrode；
Organic luminous layer is formed on the nano luminescent key-course；And
Upper electrode is formed on the organic luminous layer.
15. methods according to claim 14, wherein, lower electrode is formed over the substrate using magnetron sputtering method.
16. methods according to claims 14 or 15, wherein, nano luminescent key-course bag is formed on the lower electrode
Include：
Dot matrix region is formed on the upper electrode using photoetching process；
Nano wire or nanometer rods are grown in the dot matrix region to form nano wire or nanometer stick array using hydro-thermal method；And
Transparent dielectric material is filled in the gap of the nano wire or nanometer stick array and forms dielectric materials layer.
17. methods according to any one of claim 14-16, wherein, it is formed with the nano luminescent key-course
Machine luminescent layer includes：
Organic hole transmission layer, organic electronic are sequentially formed on the nano wire or nanometer stick array using thermal evaporation deposition to stop
Layer, organic light emission body layer and organic electron transport layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610094661.4A CN106653793B (en) | 2016-02-19 | 2016-02-19 | Nano luminescent array and its manufacturing method and nano luminescent device |
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