CN105826359B - OLED array and production method, display device - Google Patents
OLED array and production method, display device Download PDFInfo
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- CN105826359B CN105826359B CN201610383486.0A CN201610383486A CN105826359B CN 105826359 B CN105826359 B CN 105826359B CN 201610383486 A CN201610383486 A CN 201610383486A CN 105826359 B CN105826359 B CN 105826359B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0414—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
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Abstract
The invention discloses a kind of OLED array and production method, display devices, belong to field of display.The OLED array includes that substrate, setting thin film transistor (TFT) tft array on the substrate, the multiple luminescence units being arranged on the tft array and multiple spacer materials, the spacer material are arranged between adjacent luminescence unit；The OLED array further includes multiple pressure sensors, and the pressure sensor is arranged between the spacer material and the tft array.The present invention under spacer material by being arranged pressure sensor, and after being under pressure, spacer material is squeezed, to generate extruding to pressure sensor, pressure sensor is squeezed generation inductive signal, to realize pressure detecting, realizes the pressure sensitive of OLED under the premise of not external any component.
Description
Technical field
The present invention relates to field of display, more particularly to a kind of organic electroluminescence device (OrganicLight-
Emitting Diode, abbreviation OLED) array substrate and production method, display device.
Background technology
Pressure sensitive technology refer to external force can implement detection technology, such as when user to display carry out by
When pressure, display can accurately detect the pressing operation of user by pressure sensitive technology.
Currently, in display field, pressure sensitive is mainly realized by way of external module.It is with OLED display
Example realizes that the means of pressure sensitive are mainly by the external additional component with pressure sensitive function in OLED display
It realizes, the mode of this external module can cause display thickness to become larger.
Invention content
To understand the problem of pressure sensitive can cause display thickness to become larger is realized in external module in OLED display, this
Inventive embodiments provide a kind of OLED array and production method, display device.The technical solution is as follows：
In a first aspect, an embodiment of the present invention provides a kind of organic electroluminescent device OLED array substrate, including substrate,
Thin film transistor (TFT) tft array on the substrate is set, multiple luminescence units for being arranged on the tft array and it is multiple every
Underbed, the spacer material are arranged between adjacent luminescence unit；The OLED array further includes multiple pressure sensors,
The pressure sensor is arranged between the spacer material and the tft array；
The pressure sensor is pressure sensor made of nanometer piezoelectric material；
The OLED array further includes：Bottom surface signal wire and top surface signal wire, the bottom surface signal wire and the pressure
The bottom surface of force snesor connects, and the top surface signal wire is connect with the top surface of the pressure sensor, the pressure sensor
Bottom surface is the one side far from the spacer material, and the top surface of the pressure sensor is the one side close to the spacer material.
In an implementation of the embodiment of the present invention, there are one being set between two luminescence units of arbitrary neighborhood
The spacer material, there are one the pressure sensors for each spacer material lower section setting.
In another realization method of the embodiment of the present invention, the bottom surface signal wire includes first that square crossing is connected
Bottom surface signal wire and the second bottom surface signal wire, it is described between luminescence unit described in first bottom surface signal wire and adjacent rows
The bottom surface of pressure sensor is connected, and the pressure between second bottom surface signal wire and the adjacent two row luminescence unit passes
The bottom surface of sensor is connected；
The top surface signal wire includes connected the first top surface signal wire and the second top surface signal wire of square crossing, and described the
The top surface of the pressure sensor between one top surface signal wire and luminescence unit described in adjacent rows is connected, second top surface
The top surface of the pressure sensor between signal wire and the adjacent two row luminescence unit is connected.
In another realization method of the embodiment of the present invention, the OLED array further includes detection circuit, described
Detection circuit includes amplifier, capacitance and switch, the normal phase input end and inverting input of the pressure sensor and amplifier
Electrical connection, the capacitance both ends are separately connected the inverting input and output end of the amplifier, and the switch in parallel is described
The both ends of capacitance, the positive input of the amplifier are additionally operable to connect with reference voltage.
In another realization method of the embodiment of the present invention, the luminescence unit includes the anode layer set gradually, has
Machine luminescent layer and cathode layer.
Second aspect, an embodiment of the present invention provides a kind of display devices, including first aspect any one of them OLED
Array substrate.
The third aspect, an embodiment of the present invention provides a kind of OLED array production method, the method includes：
One substrate is provided；
Thin film transistor (TFT) tft array is formed on the substrate；
Multiple luminescence units are formed on the tft array；
Multiple pressure sensors and multiple spacer materials are formed on the tft array, the spacer material is arranged adjacent
Between luminescence unit, the pressure sensor is arranged between the spacer material and the tft array；
The pressure sensor is made of nanometer piezoelectric material；
The method further includes：
Before forming the pressure sensor, bottom surface signal wire, the bottom surface signal wire and the pressure sensing are formed
The bottom surface of device connects, and the bottom surface of the pressure sensor is the one side far from the spacer material；
After forming the pressure sensor, top surface signal wire, the top surface signal wire and the pressure sensing are formed
The top surface of device connects, and the top surface of the pressure sensor is the one side close to the spacer material.
In an implementation of the embodiment of the present invention, there are one being set between two luminescence units of arbitrary neighborhood
The spacer material, there are one the pressure sensors for each spacer material lower section setting.
In another realization method of the embodiment of the present invention, formation bottom surface signal wire, including：
Form square crossing connected the first bottom surface signal wire and the second bottom surface signal wire, first bottom surface signal wire with
The bottom surface of the pressure sensor between luminescence unit described in adjacent rows is connected, second bottom surface signal wire and adjacent two
The bottom surface for arranging the pressure sensor between the luminescence unit is connected；
Formation top surface signal wire, including：
Form square crossing connected the first top surface signal wire and the second top surface signal wire, first top surface signal wire with
The top surface of the pressure sensor between luminescence unit described in adjacent rows is connected, second top surface signal wire and adjacent two
The top surface for arranging the pressure sensor between the luminescence unit is connected.
In another realization method of the embodiment of the present invention, multiple luminescence units are formed on the tft array, are wrapped
It includes：
Sequentially form anode layer, organic luminous layer and cathode layer.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
The present invention under spacer material by being arranged pressure sensor, and after being under pressure, spacer material is squeezed, to right
Pressure sensor generates extruding, and pressure sensor is squeezed generation inductive signal, to realize pressure detecting, realizes not outer
Take over the pressure sensitive of OLED under the premise of what component.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of OLED array provided in an embodiment of the present invention；
Fig. 2 is the vertical view for the OLED array that Fig. 1 is provided；
Fig. 3 is the structural schematic diagram of another OLED array provided in an embodiment of the present invention；
Fig. 4 is the circuit diagram of detection circuit provided in an embodiment of the present invention；
Fig. 5 is the detailed construction schematic diagram of OLED array provided in an embodiment of the present invention；
Fig. 6 be Fig. 5 OLED array in luminescence unit enlarged structure schematic diagram；
Fig. 7 is a kind of flow chart of OLED array production method provided in an embodiment of the present invention；
Fig. 8 is the flow chart of another OLED array production method provided in an embodiment of the present invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of OLED array provided in an embodiment of the present invention, and Fig. 2 is the OLED array bases
The vertical view of plate, referring to Fig. 1 and Fig. 2, the OLED array include substrate 100, the thin film transistor (TFT) of setting on the substrate 100
Tft array 110, the multiple luminescence units 120 being arranged on tft array 110 and multiple spacer materials 130, the setting of spacer material 130 exist
Between adjacent luminescence unit 120；OLED array further includes multiple pressure sensors 140, and the setting of pressure sensor 140 exists
Between spacer material 130 and tft array 110.
The present invention under spacer material by being arranged pressure sensor, and after being under pressure, spacer material is squeezed, to right
Pressure sensor generates extruding, and pressure sensor is squeezed generation inductive signal, to realize pressure detecting, realizes not outer
Take over the pressure sensitive of OLED under the premise of what component.
Wherein, substrate 100 is also referred to as underlay substrate, typically transparent, can be glass substrate, plastic base, silicon substrate
Deng.
Fig. 3 is the structural schematic diagram of another OLED array provided in an embodiment of the present invention, the OLED battle arrays that Fig. 3 is provided
Row substrate compared with the OLED array that Fig. 1 is provided, difference lies in：It is equipped between two luminescence units 120 of arbitrary neighborhood
One spacer material 130, there are one pressure sensors 140 for the 130 lower section setting of each spacer material.This setup makes pressure pass
Sensor arrangement is most, and pressure detecting precision is high.
In addition to this design method shown in Fig. 3, spacer material 130 and pressure sensor 140 can also be by following several sides
Formula is arranged：
Spacer material 130 there are one only being set between two adjacent luminescence units 120 of part, 130 lower section of each spacer material
There are one pressure sensors 140 for setting.
Spacer material 130 there are one only being set between two luminescence units 120 of arbitrary neighborhood, but only in part spacer material
There are one pressure sensors 140 for 130 lower section settings.
Spacer material 130 there are one only being set between two adjacent luminescence units 120 of part, under part spacer material 130
There are one pressure sensors 140 for side's setting.
In the OLED array that Fig. 1 or Fig. 3 is provided, pressure sensor 140 can be made of nanometer piezoelectric material
Pressure sensor.It is convenient to be made in OLED using pressure sensor made of nanometer piezoelectric material, and pressure sensitive performance
It is good.
Wherein, nanometer piezoelectric material includes but not limited to zinc oxide ZnO, gallium nitride GaN, indium nitride InN and zinc sulphide
ZnS。
As shown in figure 3, OLED array can also include：Bottom surface signal wire 141 and top surface signal wire 142, bottom surface letter
Number line 141 is connect with the bottom surface of pressure sensor 140, and top surface signal wire 142 is connect with the top surface of pressure sensor 140, pressure
The bottom surface of sensor 140 is the one side far from spacer material 130, and the top surface of pressure sensor 140 is close to the one of spacer material 130
Face.After being under pressure due to pressure sensor, charge polarization is will produce, electrons and holes separation is gathered in upper and lower surface respectively,
The charge of the generation of pressure sensor upper and lower surface can be transferred out by top surface signal wire and bottom surface signal wire, to real
Existing pressure detecting.
Wherein, bottom surface signal wire 141 and top surface signal wire 142 can be metal wire, such as aluminium Al, copper Cu, molybdenum Mo, titanium
The metal wires such as Ti, Cr chromium.
Specifically, bottom surface signal wire 141 may include the first connected bottom surface signal wire 141A of square crossing and the second bottom
Face signal wire 141B, the bottom surface of the pressure sensor 140 between the first bottom surface signal wire 141A and adjacent rows luminescence unit 120
It is connected, the bottom surface of the pressure sensor 140 between the second bottom surface signal wire 141B and adjacent two row luminescence unit 120 is connected；
Top surface signal wire 142 may include connected the first top surface signal wire 142A and the second top surface signal wire of square crossing
The top surface of 142B, the pressure sensor 140 between the first top surface signal wire 142A and adjacent rows luminescence unit 120 are connected, the
The top surface of pressure sensor 140 between two top surface signal wire 142B and adjacent two row luminescence unit 120 is connected.
It connects up, the bottom surface of all pressure sensors and top surface can be separately connected, to realize feeling of stress in a manner described
It answers；And this mode convenient for wiring and makes.
As shown in figure 4, the OLED array that Fig. 1 or Fig. 3 is provided can also include detection circuit 150, detection circuit 150
Including amplifier 151, capacitance 152 and switch 153, the normal phase input end and anti-phase input of pressure sensor 140 and amplifier 151
End electrical connection, 152 both ends of capacitance are separately connected the inverting input and output end of amplifier 151, and switch 153 is connected in parallel on capacitance
152 both ends, the positive input of amplifier 151 are additionally operable to connect with reference voltage V ref.It is carried out by the signal of amplifier
Amplification, is then stored in capacitance and is detected, and discharges the charge in capacitance by switch after the completion of detection；Detection circuit collection
At on substrate, facilitating making.
Wherein, the both ends of capacitance 152 can be electrically connected with the voltage detector component on driving circuit, thus by capacitance 152
Voltage be converted into pressure value.
Wherein, the peripheral leads region of OLED array can be arranged in above-mentioned detection circuit 150.
As shown in figure 5, in the OLED array that Fig. 1 or Fig. 3 is provided, luminescence unit 120 may include setting gradually
Anode layer 121, organic luminous layer 122 and cathode layer 123.
As shown in fig. 6, anode layer 121 includes multiple anodes 1210 of array distribution.
Further, tft array 110 may include set gradually buffer layer 111 on the substrate 100, active layer 112,
First insulating layer 113, first grid layer 114, second insulating layer 115, second grid layer 116, intermediate dielectric layer 117, source-drain electrode
Layer 118 and flatness layer 119.Certainly, the film layer sequence of tft array 110 shown in Fig. 5 is only for example, in practical applications tft array
110 can also be arranged in other orders, and the present invention is without limitation.In addition, above-mentioned tft array 110 include it is more or
Less film layer, as long as the corresponding functions of TFT can be made it have.
As shown in figure 5, OLED array further includes pixel defining layer 160, pixel defining layer 160 is located at anode layer 121
On.
Referring specifically to Fig. 6, pixel defining layer 160 include with multiple pixel definition units with certain intervals, pixel is fixed
Adopted unit is corresponded with anode 1210, and each pixel definition unit defines a luminous zone on corresponding anode 1210
Domain, organic luminous layer 122 are located in the light-emitting zone.
The position of Fig. 5 and pixel defining layer shown in fig. 6 160 is only for example, can also first shape in other realization methods
Pixel definition layer 160, then anode layer 121 is formed in pixel defining layer 160.
In the above-described embodiments, substrate 101 is preferably silicon Si substrates, and tft array 110 is partly led using complementary metal oxide
Body (Complementary Metal Oxide Semiconductor, abbreviation CMOS) technology is made.It is made of CMOS technology
When tft array 110, detection circuit 150 can be made on the substrate 101 simultaneously, to facilitate the making of detection circuit 150,
Simplify preparation process.
In addition, due to having voltage on Si substrates, detection circuit 150 is prepared on Si substrates, Si substrates may be used
On reference voltage of the voltage as detection circuit 150, to facilitate the wiring of detection circuit 150.
Wherein, include PMOS area and NMOS area using tft array made of CMOS technology.PMOS area and NMOS area
Domain may be used under type such as and design：PMOS area is low temperature polycrystalline silicon (Low Temperature Poly-Silicon, abbreviation
LTPS) TFT structure, NMOS area are pixel TFT structure, and the concrete form of LTPSTFT structures and pixel TFT structure is here no longer
It repeats.
In embodiments of the present invention, buffer layer 111, the first insulating layer 113, second insulating layer 115, intermediate dielectric layer 117,
Flatness layer 119, spacer material 130 and pixel defining layer 160 are insulating layer, and insulating layer is specifically as follows silicon nitride or silicon oxynitride
Layer.Certainly, the part film layer in above-mentioned insulating layer, for example, flatness layer 119 and pixel defining layer 160 can also be by organic materials
It is made, such as at least one in polyimides (PI), polyamide (PA), acryl resin, benzocyclobutene (BCB) and phenolic resin
Kind.
In embodiments of the present invention, anode layer 121 and cathode layer 123 can be tin indium oxide (ITO) or indium zinc oxide
(IZO) film layer.
In embodiments of the present invention, first grid layer 114, second grid layer 116 and source-drain electrode layer 118 can be metal
Layer, such as the metal layers such as Al, Cu, Mo, Ti, Cr.
In embodiments of the present invention, organic luminous layer 122 includes but not limited to the hole injection sublayer set gradually, hole
Transmit sublayer, organic light emission sublayer, electron-transport sublayer and electron injection sublayer.
The embodiment of the present invention additionally provides a kind of display device, which includes that any figures of Fig. 1~Fig. 6 provide
OLED array.
In the specific implementation, display device provided in an embodiment of the present invention can be mobile phone, tablet computer, television set, show
Show any product or component with display function such as device, laptop, Digital Frame, navigator.
The present invention under spacer material by being arranged pressure sensor, and after being under pressure, spacer material is squeezed, to right
Pressure sensor generates extruding, and pressure sensor is squeezed generation inductive signal, to realize pressure detecting, realizes not outer
Take over the pressure sensitive of OLED under the premise of what component.
Fig. 7 is a kind of flow chart of OLED array production method provided in an embodiment of the present invention, for making Fig. 1 institutes
The OLED array shown, referring to Fig. 7, this method includes：
Step 301：One substrate is provided.
Step 302：Thin film transistor (TFT) tft array is formed on substrate.
Step 303：Multiple luminescence units are formed on tft array.
Step 304：Multiple pressure sensors and multiple spacer materials are formed on tft array, spacer material is arranged adjacent
Between luminescence unit, pressure sensor is arranged between spacer material and tft array.
The present invention under spacer material by being arranged pressure sensor, and after being under pressure, spacer material is squeezed, to right
Pressure sensor generates extruding, and pressure sensor is squeezed generation inductive signal, to realize pressure detecting, realizes not outer
Take over the pressure sensitive of OLED under the premise of what component.
Fig. 8 is the flow chart of another OLED array production method provided in an embodiment of the present invention, for making Fig. 3
Shown in OLED array, referring to Fig. 8, this method includes：
Step 401：One substrate is provided.
Step 402：Thin film transistor (TFT) tft array is formed on substrate.
Wherein, tft array is formed on substrate, including：
It is successively set on substrate and makes buffer layer, active layer, the first insulating layer, first grid layer, second insulating layer, the
Two grid layers, intermediate dielectric layer, source-drain electrode layer and flatness layer.Certainly, the structure of tft array is only for example here, is actually being answered
Can also include more or less film layer with middle tft array, as long as the corresponding functions of TFT can be made it have.
In the above-described embodiments, substrate can be silicon Si substrates, and tft array is made of CMOS technology.Using CMOS skills
Art makes tft array and detection circuit can be produced on substrate simultaneously, is made to facilitate.
Step 403：Multiple luminescence units are formed on tft array.
In another realization method of the embodiment of the present invention, multiple luminescence units are formed on tft array, including：
Sequentially form anode layer, organic luminous layer and cathode layer.
Wherein, anode layer includes multiple anodes of array distribution.
Further, this method further includes：Pixel defining layer is made, pixel defining layer is located on anode layer.Specifically, as
Plain definition layer includes being corresponded with multiple pixel definition units with certain intervals, pixel definition unit and anode, and every
A pixel definition unit defines a light-emitting zone on corresponding anode, and organic luminous layer is located in the light-emitting zone.
The production method of above-mentioned pixel defining layer is only for example, and pixel definition can also be initially formed in other realization methods
Layer, then anode layer is formed in pixel defining layer.
Step 404：Bottom surface signal wire is formed on tft array.
Specifically, bottom surface signal wire can be formed in aforementioned pixel defining layer.
Step 405：Multiple pressure sensors, the bottom surface of bottom surface signal wire and pressure sensor are formed on the signal wire of bottom surface
The bottom surface of connection, pressure sensor is the one side far from spacer material.
In step 404, bottom surface signal wire is formed, including：
Form square crossing connected the first bottom surface signal wire and the second bottom surface signal wire, the first bottom surface signal wire with it is adjacent
The bottom surface of pressure sensor between two row luminescence units is connected, between the second bottom surface signal wire and adjacent two row luminescence unit
The bottom surface of pressure sensor is connected.
It connects up, the bottom surface of all pressure sensors and top surface can be separately connected, to realize feeling of stress in a manner described
It answers；And this mode convenient for wiring and makes.
Step 406：Top surface signal wire, the top surface company of top surface signal wire and pressure sensor are formed on pressure sensor
It connects, the top surface of pressure sensor is the one side close to spacer material.
After being under pressure due to pressure sensor, charge polarization is will produce, electrons and holes separation is gathered in up and down respectively
Surface can be transferred out the charge of the generation of pressure sensor upper and lower surface by top surface signal wire and bottom surface signal wire,
To realize pressure detecting.
Wherein, top surface signal wire is formed, including：
Form square crossing connected the first top surface signal wire and the second top surface signal wire, the first top surface signal wire with it is adjacent
The top surface of pressure sensor between two row luminescence units is connected, between the second top surface signal wire and adjacent two row luminescence unit
The top surface of pressure sensor is connected.
It connects up, the bottom surface of all pressure sensors and top surface can be separately connected, to realize feeling of stress in a manner described
It answers；And this mode convenient for wiring and makes.
Step 407：Multiple spacer materials are formed on the signal wire of top surface, spacer material is arranged between adjacent luminescence unit,
Pressure sensor is arranged between spacer material and tft array.
In an implementation of the embodiment of the present invention, dottle pin there are one being set between two luminescence units of arbitrary neighborhood
Object, there are one pressure sensors for the setting of each spacer material lower section.This setup makes pressure sensor arrangement most, pressure
Accuracy of detection is high.
In embodiments of the present invention, pressure sensor may be used a nanometer piezoelectric material and be made.Using nanometer piezoelectric material
Manufactured pressure sensor, it is convenient to be made in OLED, and pressure sensitive performance is good.
Wherein, nanometer piezoelectric material includes but not limited to ZnO, GaN, InN and ZnS.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of organic electroluminescent device OLED array substrate, including substrate, the thin film transistor (TFT) of setting on the substrate
Tft array, the multiple luminescence units being arranged on the tft array and multiple spacer materials, the spacer material are arranged adjacent
Between luminescence unit；It is characterized in that, the OLED array further includes multiple pressure sensors, the pressure sensor is set
It sets between the spacer material and the tft array；
The pressure sensor is pressure sensor made of nanometer piezoelectric material；
The OLED array further includes：Bottom surface signal wire and top surface signal wire, the bottom surface signal wire are passed with the pressure
The bottom surface of sensor connects, and the top surface signal wire is connect with the top surface of the pressure sensor, the bottom surface of the pressure sensor
For the one side far from the spacer material, the top surface of the pressure sensor is the one side close to the spacer material.
2. OLED array according to claim 1, which is characterized in that two luminescence units of arbitrary neighborhood it
Between set there are one the spacer material, there are one the pressure sensors for setting below each spacer material.
3. OLED array according to claim 1, which is characterized in that the bottom surface signal wire includes square crossing phase
The first bottom surface signal wire and the second bottom surface signal wire even, luminescence unit described in first bottom surface signal wire and adjacent rows it
Between the bottom surface of the pressure sensor be connected, the institute between second bottom surface signal wire and the adjacent two row luminescence unit
The bottom surface for stating pressure sensor is connected；
The top surface signal wire includes connected the first top surface signal wire and the second top surface signal wire of square crossing, first top
The top surface of the pressure sensor between face signal wire and luminescence unit described in adjacent rows is connected, second top surface signal
The top surface of the pressure sensor between line and the adjacent two row luminescence unit is connected.
4. OLED array according to claim 1, which is characterized in that the OLED array further includes detection electricity
Road, the detection circuit include amplifier, capacitance and switch, the normal phase input end and reverse phase of the pressure sensor and amplifier
Input terminal is electrically connected, and the capacitance both ends are separately connected the inverting input and output end of the amplifier, the switch in parallel
At the both ends of the capacitance, the positive input of the amplifier is additionally operable to connect with reference voltage.
5. OLED array according to claim 1, which is characterized in that the luminescence unit includes the sun set gradually
Pole layer, organic luminous layer and cathode layer.
6. a kind of display device, which is characterized in that including OLED array described in any one of claim 1 to 5.
7. a kind of OLED array production method, which is characterized in that the method includes：
One substrate is provided；
Thin film transistor (TFT) tft array is formed on the substrate；
Multiple luminescence units are formed on the tft array；
Multiple pressure sensors and multiple spacer materials are formed on the tft array, the spacer material is arranged to shine in adjacent
Between unit, the pressure sensor is arranged between the spacer material and the tft array；
The pressure sensor is made of nanometer piezoelectric material；
The method further includes：
Before forming the pressure sensor, bottom surface signal wire, the bottom surface signal wire and the pressure sensor are formed
Bottom surface connects, and the bottom surface of the pressure sensor is the one side far from the spacer material；
After forming the pressure sensor, top surface signal wire, the top surface signal wire and the pressure sensor are formed
Top surface connects, and the top surface of the pressure sensor is the one side close to the spacer material.
8. the method according to the description of claim 7 is characterized in that being equipped with one between two luminescence units of arbitrary neighborhood
A spacer material, there are one the pressure sensors for each spacer material lower section setting.
9. the method according to the description of claim 7 is characterized in that formation bottom surface signal wire, including：
Form square crossing connected the first bottom surface signal wire and the second bottom surface signal wire, first bottom surface signal wire with it is adjacent
The bottom surface of the pressure sensor between luminescence unit described in two rows is connected, and second bottom surface signal wire arranges institute with adjacent two
The bottom surface for stating the pressure sensor between luminescence unit is connected；
Formation top surface signal wire, including：
Form square crossing connected the first top surface signal wire and the second top surface signal wire, first top surface signal wire with it is adjacent
The top surface of the pressure sensor between luminescence unit described in two rows is connected, and second top surface signal wire arranges institute with adjacent two
The top surface for stating the pressure sensor between luminescence unit is connected.
10. method according to any one of claims 7 to 9, which is characterized in that form multiple hairs on the tft array
Light unit, including：
Sequentially form anode layer, organic luminous layer and cathode layer.
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| CN107193144A (en) * | 2017-04-26 | 2017-09-22 | 武汉华星光电技术有限公司 | LTPS array base paltes and preparation method thereof |
| CN109148542B (en) * | 2018-08-30 | 2021-08-27 | 京东方科技集团股份有限公司 | QLED display substrate, manufacturing method thereof and QLED display device |
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| CN104409469A (en) * | 2014-10-30 | 2015-03-11 | 京东方科技集团股份有限公司 | AMOLED touch control display device, and preparation method and drive method thereof |
| CN104992627A (en) * | 2015-07-29 | 2015-10-21 | 敦泰电子有限公司 | Display module with pressure sensor |
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| US9647044B2 (en) * | 2014-11-26 | 2017-05-09 | Boe Technology Group Co., Ltd. | Organic light-emitting diode array substrate and manufacturing method thereof, and display device |
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| CN104409469A (en) * | 2014-10-30 | 2015-03-11 | 京东方科技集团股份有限公司 | AMOLED touch control display device, and preparation method and drive method thereof |
| CN104992627A (en) * | 2015-07-29 | 2015-10-21 | 敦泰电子有限公司 | Display module with pressure sensor |
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