CN109065587A - Display base plate and its manufacturing method, display device - Google Patents
Display base plate and its manufacturing method, display device Download PDFInfo
- Publication number
- CN109065587A CN109065587A CN201810890650.6A CN201810890650A CN109065587A CN 109065587 A CN109065587 A CN 109065587A CN 201810890650 A CN201810890650 A CN 201810890650A CN 109065587 A CN109065587 A CN 109065587A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- photodiode
- emitting diode
- pole
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of display base plate and its manufacturing method, display device, belongs to field of display technology, can at least partly solve the problems, such as that structure is complicated, accuracy of identification is low when both existing display base plate and touch base plate become one.Display base plate of the invention, including substrate, the drive circuit layer including multiple transistors of setting on the substrate, multiple light emitting diodes and multiple photodiodes are additionally provided with far from substrate side in the drive circuit layer, first pole of each light emitting diode connects the first pole of a transistor, first pole of each photodiode connects the first pole of a transistor, and the photodiode is for detecting light that is being issued by the light emitting diode and being reflected back through fingerprint.
Description
Technical field
The invention belongs to field of display technology, and in particular to a kind of display base plate, a kind of display device and a kind of display base
The manufacturing method of plate.
Background technique
Researcher attempts for fingerprint Identification sensor to be integrated in display panel.Existing way is: the shape in substrate
It include multiple transistors and multiple photodiodes in the drive circuit layer, later in drive circuit layer at drive circuit layer
Upper formation luminescent device finally forms encapsulation cover plate in the top of luminescent device.Each transistor connects a luminescent device, from
And it controls the luminescent device and issues the brightness of light to be shown.Each photodiode reverse bias, for the strong of detection light
It is weak.
The implementation method of fingerprint recognition is as follows: the light that luminescent device issues is reflected back after passing through encapsulation cover plate by fingerprint, most
Be mapped on photodiode eventually, the power of the light detected according to photodiode it can be inferred that fingerprint apart from photodiode away from
From distance (light intensity being reflected back, then the electric current of photodiode is big, illustrates that the position of the photodiode corresponds to fingerprint
Ridge；The light being reflected back is weak, then the electric current of photodiode is small, illustrates that the position of the photodiode corresponds to the paddy of fingerprint).
At least there are the following problems in the prior art: first is that forming photodiode and transistor two in drive circuit layer
The device architecture of seed type, complex process, and structure and complex circuit；Second is that fingerprint at a distance from photodiode farther out, light
The actually detected signal arrived of quick diode is weaker, and the precision of fingerprint recognition is not high.
Summary of the invention
The present invention at least partly solves the existing display panel for being able to achieve fingerprint recognition, and structure is complicated, manufacturing process is multiple
Problem miscellaneous, fingerprint recognition precision is low provides a kind of display base plate and its manufacturing method, a kind of display device.
According to the first aspect of the invention, a kind of display base plate is provided, including substrate, setting on the substrate include
The drive circuit layer of multiple transistors is additionally provided with multiple light emitting diodes and more far from substrate side in the drive circuit layer
A photodiode, the first pole of each light emitting diode connect the first pole of a transistor, and the of each photodiode
One pole connects the first pole of a transistor, and the photodiode being issued and through referring to for detecting by the light emitting diode
The light that line is reflected back.
Optionally, the light emitting diode for setting quantity constitutes a pixel, and the photodiode is arranged in adjacent pixel
Between.
Optionally, the device layer of the light emitting diode includes organic luminous layer；The device layer packet of the photodiode
Include p-type organic material layer and N-type organic material layer.
Optionally, the p-type organic material layer includes thiophene-based material, gathers to styrene support and its derivative, aromatic amine
Class material, phthalocyanine dye, any one material in polycyclic aromatic compounds, the N-type organic material layer include C60 and its spread out
Biology, thiophene-based material, poly- any one material in styrene support and its derivative, polycyclic aromatic compounds.
Optionally, between the device layer of adjacent light emitting diode and adjacent light emitting diode and photodiode
Device layer between separated by pixel defining layer.
Optionally, support column, the support are additionally provided on the surface far from the substrate of the pixel defining layer
Column is used to support encapsulation cover plate.
Optionally, the second of the second pole of the light emitting diode and the photodiode is extremely insulated from each other.
Optionally, the extremely integral structure of the second of whole light emitting diodes, the second of whole photodiodes is extremely integrally
Structure.
According to the second aspect of the invention, a kind of display device is provided, including provided according to a first aspect of the present invention
Display base plate.
According to the third aspect of the invention we, a kind of manufacturing method of display base plate is provided, which includes:
The drive circuit layer including multiple transistors is formed on the substrate；
First electrode layer is formed in the drive circuit layer, and graphically obtain multiple light emitting diodes the first pole and
First pole of multiple photodiodes, wherein the first of the first pole of each light emitting diode and each photodiode is extremely
Respectively the first pole of one transistor of connection；
Each light emitting diode first extremely on form the device layer of the light emitting diode, in each photodiode
First extremely on form the device layer of the photodiode；
The second pole that light emitting diode is formed on the device layer of the light emitting diode, in the device of the photodiode
The second pole of photodiode is formed on part layer.
Optionally, the light emitting diode includes Organic Light Emitting Diode, first pole in each light emitting diode
It is upper formed the light emitting diode device layer include: by way of inkjet printing where the first pole of each light emitting diode
Position forms organic luminous layer；
The photodiode includes organic photodiode, each photodiode first extremely on to form this photosensitive
The device layer of diode includes: to form N-type in the first pole position of each photodiode by way of inkjet printing
Organic material layer and p-type organic material layer.
Detailed description of the invention
Fig. 1 is the device layer of light emitting diode and the device of photodiode in a kind of display base plate of the embodiment of the present invention
The distribution map of part layer；
The sectional view for the display device that Fig. 2 is made of a kind of display base plate of the embodiment of the present invention；
Fig. 3 is the schematic diagram that display device shown in Fig. 2 is used for fingerprint recognition；
Wherein, appended drawing reference are as follows: R, red light emitting diodes；G, green LED；B, blue LED；S,
Photodiode；1, bearing substrate；10, substrate；20, drive circuit layer；21, active area；22, first grid insulating layer；23,
One grid；24, second grid insulating layer；25, second grid；26, interlayer insulating film；27, the first pole of transistor；28, flat
Change layer；31, first electrode structure；32, second electrode structure；41, the device layer of light emitting diode；42P, p-type organic material layer；
42N, N-type organic material layer；51, third electrode structure；52, the 4th electrode structure；60, encapsulation cover plate；71, pixel defining layer；
72, support column；100, fingerprint.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
In the present invention, " graphical " refers to the step of forming the structure with specific figure, can be photoetching process,
Photoetching process include forming material layer, coating photoresist, exposure, development, etching, photoresist lift off and etc. in a step or more
Step；Certainly, " graphical " can also be other techniques such as imprint process, InkJet printing processes.
Embodiment 1:
The present embodiment provides a kind of display base plate, including substrate 10, setting on the substrate 10 include multiple transistors
Drive circuit layer 20 is additionally provided with multiple light emitting diodes and multiple photosensitive two poles far from 10 side of substrate in drive circuit layer 20
Pipe S, the first pole of each light emitting diode connect the first pole 27 (one i.e. in the source electrode and drain electrode of transistor of a transistor
It is a), the first pole of each photodiode S connects the first pole 27 of a transistor, and photodiode S is for detecting by shining
Light that is that diode issues and being reflected back through fingerprint 100.
Drive circuit layer 20 is set on the substrate 10, (the driving certainly of multiple transistors is formed in drive circuit layer 20
It may also include other structures for driving such as grid line, data line, switching transistor in circuit layer 20, no longer retouch in detail herein
State), part of transistor (i.e. driving transistor) control flows through the size of the electric current of light emitting diode, thus driving luminous two
Pole pipe issues the light of expected intensity, so realization display function.As shown in figure 3, what light emitting diode (being located on the left of Fig. 3) issued
Light emission goes out directive fingerprint 100 after the display base plate is formed by the light output surface of display device and is re-reflected into (the position photodiode S
On the right side of Fig. 3), to change the electric current in photodiode S, portion of transistor (i.e. reading transistor) receives photodiode
The electric current of S, to realize that fingerprint identification function (is formed with finger not in contact with the display base plate according to the distribution of electric current power
The state on the light-emitting surface surface of display device is compared, and the electric current in photodiode S increases more, then illustrates corresponding position
Fingerprint 100 is close apart from the display base plate, is herein ridge；What the electric current in photodiode S increased lacks, then illustrates corresponding position
Fingerprint 100 it is remote apart from the display base plate, be herein paddy).
Both light emitting diode and photodiode S can be formed on drive circuit layer 20, this is derived from structure
It is close, it can be manufactured by compatible technique, additionally due to transistor and route are only needed to form in drive circuit layer 20, driving electricity
The structure and technique of road floor 20 are also relatively easy.And according to above structure, photodiode S is compared to the prior art closer to finger
Line 100, received light is stronger, and the precision of fingerprint recognition is also improved.
Display base plate combination encapsulation cover plate 60 shown in Fig. 2 obtains display panel.Bearing substrate 1 in Fig. 2 is such as
A kind of structure for being used to carry flexible display substrates of glass substrate, in the flexible display substrates or its Flexible Displays face formed
After plate completes, display base plate flexible or display panel flexible will be stripped down from this bearing substrate 1.
Fig. 2 shows be a kind of feasible drive circuit layer 20 structure, those skilled in the art can be according to the prior art
To in drive circuit layer 20 transistor and route make the adjustment of adaptability, as long as can be realized control lighting transistor shine
And the electric current of detection photodiode S.
Specifically, the transistor in Fig. 2 includes active area 21, first grid 23, second grid 25, first grid insulating layer
22, second grid insulating layer 24, the first pole 27 and the second pole.Wherein the first of the first pole 27 connection light emitting diode of transistor
Pole (referred to herein as first electrode structure 31) or the first pole (referred to herein as second electrode structure 32) of photodiode S.The
One electrode structure 31 can be same material formation with second electrode structure 32, be also possible to different materials formation.In Fig. 2
In, first electrode structure 31 and 32 same layer of second electrode structure are arranged.
The first pole (i.e. first electrode structure 31 in Fig. 2) of each light emitting diode connects the first pole of a transistor
27, the first pole of the light emitting diode can be anode, be also possible to cathode, only need to make the hair when driving the light emitting diode
Optical diode forward bias.The first pole (i.e. second electrode structure 32 in Fig. 2) of each photodiode S connects one
First pole 27 of transistor, the first pole of photodiode S can be anode and is also possible to cathode, need to only drive this photosensitive
Make the photodiode S reverse bias when diode S.
For example, Fig. 2 shows light emitting diode be Organic Light Emitting Diode, first extremely its anode；Fig. 2 shows light
Quick diode S is organic photosensitive diode, first extremely its anode.
Optionally, set quantity light emitting diode constitute a pixel, photodiode S setting adjacent pixel it
Between.It that is to say that position adjacent to each other is arranged in multiple light emitting diodes as a pixel, photodiode S is arranged in phase
Between adjacent pixel.To which the photodiode S light emitting diode for having no effect on different colours constitutes a complete pixel.
Specifically, as shown in Figure 1, red light emitting diodes R, green LED G, blue LED B and light
Quick diode S is in the arrangement of array in the display base plate.One red light emitting diodes R, a green LED
G, a blue LED B is as a repetitive unit (that is to say a pixel).Wherein the shape of light emitting diode and
The shape of photodiode S is hexagonal structure, naturally it is also possible to be other shapes.And the shape of photodiode S
It can be not identical as the shape of light emitting diode.Here shape refers to the shape of wherein device layer, rather than corresponding negative
The shape of the electrode of pole or anode.
Certainly, each light emitting diode is also possible to issue the light of same color, in the color film base cooperated with the display base plate
Color conversion layer is set in plate, the light of this same color is converted to the light of different colours.
Optionally, the device layer 41 of light emitting diode includes organic luminous layer；The device layer of photodiode S includes p-type
Organic material layer 42P and N-type organic material layer 42N.I.e. light emitting diode is Organic Light Emitting Diode, and photodiode S is to have
Machine photodiode.Both diodes can be formed in same drive circuit layer 20 by the technique of inkjet printing.From
And making preparation process simple, product structure is also simple.
Specifically, the device layer 41 of the light emitting diode in Fig. 3 can be such as electron injecting layer, electron transfer layer,
Electron-hole recombinations layer, hole injection layer, hole transmission layer, hole blocking layer multilayer organic luminous layer, it is above can be according to
It is arranged according to the prior art.
Optionally, the p-type organic material layer includes thiophene-based material, gathers to styrene support and its derivative, aromatic amine
Class material, phthalocyanine dye, any one material in polycyclic aromatic compounds, the N-type organic material layer include C60 and its spread out
Biology, thiophene-based material, poly- any one material in styrene support and its derivative, polycyclic aromatic compounds.Through testing
It was found that the above material is easier to be fabricated in same drive circuit layer 20 by the technique mutually compatible with Organic Light Emitting Diode,
And photoelectric conversion efficiency is higher.
Following table is experimentally determined several preferred combinations, and two kinds of materials with a line are a pair.
Optionally, between the device layer 41 of adjacent light emitting diode, adjacent light emitting diode and photodiode S it
Between separated by pixel defining layer 71.Referring to Fig. 2, pixel defining layer 71 separates each diode, thus between each diode
Work it is independent of one another.
Optionally, support column 72 is additionally provided on the surface of the separate substrate 10 of pixel defining layer 71, support column 72 is used
In support encapsulation cover plate 60.Fig. 2 is participated in, encapsulation cover plate 60 is arranged on support column 72, to be combined into above-mentioned display base plate
Display panel.
The second pole (i.e. third electrode structure 51 in Fig. 2) of light emitting diode and the second pole of photodiode S (are schemed
The 4th electrode structure 52 in 2) it is insulated from each other, the electric with detection of display of the driving circuit to light emitting diode so can be realized
Road is electrically being separated from each other to the detection of the electric current of photodiode S.Certainly, those skilled in the art can will equally shine
Second pole of diode is extremely connected with the second of photodiode S.
Optionally, the extremely integral structure of the second of whole light emitting diodes, the second of whole photodiode S is extremely integrally
Structure.Second electrode potential of i.e. all light emitting diodes is equal, and the current potential of the second pole of all photodiode S is equal.
The quantity of electrode in the driving circuit of the corresponding display base plate can be so reduced, and improves the uniform of display and fingerprint recognition
Property.Certain those skilled in the art can also be extremely insulated from each other separated by the second of part light emitting diode, or by part light
The second of quick diode S is extremely insulated from each other separated, controls to realize to these light emitting diodes and the independent of photodiode S
System.
Embodiment 2:
The present embodiment provides a kind of display devices, including display base plate provided by according to embodiments of the present invention 1.It will be real
The display base plate combination the second substrate (encapsulation cover plate 60 in e.g. Fig. 2) applied in example 1 forms display panel, and then manufactures it
The display device of his form.
Specifically, the display device can be Organic Light Emitting Diode (OLED) display panel, Electronic Paper, mobile phone, plate electricity
Any products or components having a display function such as brain, television set, display, laptop, Digital Frame, navigator.
Embodiment 3:
The present embodiment provides a kind of manufacturing methods of display base plate to tie for manufacturing display base plate provided by embodiment 1
Fig. 2 is closed, which includes:
Step 1: forming the drive circuit layer 20 including multiple transistors on the substrate 10.
Specifically, substrate 10 is formed in glass support plate 1, the material of substrate 10 is flexible organic material, such as polyamides Asia
Polyimide resin (PI).Buffer layer (being not shown in Fig. 2) and amorphous silicon (a-Si), obtain polycrystalline after quasi-molecule laser annealing
Silicon, then graphically obtain active area 21.Deposition of insulative material obtains first grid insulating layer 22, and deposition conductive material is simultaneously graphical
Obtain first grid 23.Deposition of insulative material obtains second grid insulating layer 24, deposits conductive material and graphically obtains second
Grid 25.Interlayer insulating film 26 is deposited, and forms aperture on interlayer insulating film 26, for the source-drain area of transistor to be drawn electricity
Pole.Conductive layer is deposited on interlayer insulating film 26, and graphically obtains the first pole 27, the second pole of transistor, wherein each crystal
First pole 27 of pipe is the electrode for connecting light emitting diode or photodiode S.Planarization layer 28 is formed, and corresponding brilliant
The position of first pole 27 of body pipe forms aperture.In this way, completing the production of drive circuit layer 20.
Second step forms first electrode layer in drive circuit layer 20, and graphically obtains the of multiple light emitting diodes
First pole of one pole and multiple photodiodes, wherein the of the first pole of each light emitting diode and each photodiode
One extremely respectively connects the first pole 27 of a transistor.
First pole of light emitting diode is labeled as first electrode structure 31 herein, and the first pole of photodiode S is marked herein
Note is second electrode structure 32.First electrode structure 31 passes through hole in planarization layer 28 and 27 phase of the first pole of corresponding transistor
Even, second electrode structure 32 is connected by the hole in planarization layer 28 with the first pole 27 of corresponding transistor.
Third step, each light emitting diode first extremely on form the device layer 41 of the light emitting diode, in each light
The first of quick diode S extremely on form the device layer of photodiode S.
For example, light emitting diode is Organic Light Emitting Diode, in each first electrode structure by way of inkjet printing
31 positions form its device layer 41 (specially multiple organic luminous layers), specifically, for example, successively printing hole injection
Layer, hole transmission layer, electron-hole recombinations layer, hole blocking layer, electron transfer layer, electron injecting layer；Photodiode S is to have
Machine photodiode forms N-type organic material layer in each 32 position of second electrode structure by way of inkjet printing
42N and p-type organic material layer 42P.Pixel defining layer 71 is also needed to form before carrying out inkjet printing and is defined in pixel
Support column 72 is formed on layer 71, to form the device layer 41 of the Organic Light Emitting Diode and the device of photodiode S
Boundary between layer.
4th step forms the second pole (i.e. third electrode knot of the light emitting diode on the device layer 41 of light emitting diode
Structure 51), the second pole (i.e. the 4th electrode structure 52) of photodiode S is formed on the device layer of photodiode S.
Preferably, the device layer 41 of light emitting diode and the device layer of photodiode S are contour, consequently facilitating the two is formed
Flat upper surface.It is graphical again by one layer of conductive layer of deposition, obtain third electrode structure 51 and the 4th electrode structure 52.From
And complete the formation of light emitting diode and photodiode S.
The production of display base plate is so completed, it is subsequent that encapsulation is formed on third electrode structure 51 and the 4th electrode structure 52
Cover board 60, e.g. thin-film encapsulation layer (TFE) are to obtain display panel.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of display base plate, special including substrate, the drive circuit layer including multiple transistors of setting on the substrate
Sign is, is additionally provided with multiple light emitting diodes and multiple photodiodes far from substrate side in the drive circuit layer, often
First pole of a light emitting diode connects the first pole of a transistor, and the first pole of each photodiode connects a crystal
First pole of pipe, the photodiode is for detecting light that is being issued by the light emitting diode and being reflected back through fingerprint.
2. display base plate according to claim 1, which is characterized in that the light emitting diode for setting quantity constitutes a picture
Element, the photodiode setting is between adjacent pixels.
3. display base plate according to claim 1, which is characterized in that the device layer of the light emitting diode includes organic hair
Photosphere；The device layer of the photodiode includes p-type organic material layer and N-type organic material layer.
4. display base plate according to claim 3, which is characterized in that the p-type organic material layer include thiophene-based material,
Poly- any one material in styrene support and its derivative, aromatic amine material, phthalocyanine dye, polycyclic aromatic compounds,
The N-type organic material layer includes C60 and its derivative, thiophene-based material, gathers to styrene support and its derivative, polycyclic aromatic
Any one material in compound.
5. display base plate according to claim 2, which is characterized in that between the device layer of adjacent light emitting diode, with
And it is separated by pixel defining layer between the device layer of adjacent light emitting diode and photodiode.
6. display base plate according to claim 5, which is characterized in that in the pixel defining layer far from the substrate
Support column is additionally provided on surface, the support column is used to support encapsulation cover plate.
7. display base plate according to claim 1, which is characterized in that the second pole of the light emitting diode with it is described photosensitive
The second of diode is extremely insulated from each other.
8. display base plate according to claim 7, which is characterized in that the extremely one knot of the second of whole light emitting diodes
Structure, the extremely integral structure of the second of whole photodiodes.
9. a kind of display device, which is characterized in that including display base plate according to any one of claims 1 to 8.
10. a kind of manufacturing method of display base plate, which is characterized in that the manufacturing method includes:
The drive circuit layer including multiple transistors is formed on the substrate；
First electrode layer is formed in the drive circuit layer, and graphically obtains the first pole of multiple light emitting diodes and multiple
First pole of photodiode, wherein the first of the first pole of each light emitting diode and each photodiode is extremely respectively
Connect first pole an of transistor；
Each light emitting diode first extremely on form the device layer of the light emitting diode, the first of each photodiode
The device layer of the photodiode is formed on extremely；
The second pole that light emitting diode is formed on the device layer of the light emitting diode, in the device layer of the photodiode
Upper the second pole for forming photodiode.
11. manufacturing method according to claim 10, which is characterized in that
The light emitting diode includes Organic Light Emitting Diode, it is described each light emitting diode first extremely on formed this shine
The device layer of diode include: the first pole position by way of inkjet printing in each light emitting diode formed it is organic
Luminescent layer；
The photodiode includes organic photodiode, each photodiode first extremely on form photosensitive two pole
The device layer of pipe includes: organic in the first pole position of each photodiode formation N-type by way of inkjet printing
Material layer and p-type organic material layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810890650.6A CN109065587A (en) | 2018-08-07 | 2018-08-07 | Display base plate and its manufacturing method, display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810890650.6A CN109065587A (en) | 2018-08-07 | 2018-08-07 | Display base plate and its manufacturing method, display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109065587A true CN109065587A (en) | 2018-12-21 |
Family
ID=64678085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810890650.6A Pending CN109065587A (en) | 2018-08-07 | 2018-08-07 | Display base plate and its manufacturing method, display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109065587A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797472A (en) * | 2019-10-29 | 2020-02-14 | 维沃移动通信有限公司 | Display substrate, display device and manufacturing method of display substrate |
| CN111799312A (en) * | 2020-07-14 | 2020-10-20 | 京东方科技集团股份有限公司 | Preparation method of display substrate, display substrate and display device |
| WO2021082058A1 (en) * | 2019-10-30 | 2021-05-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
| WO2023230750A1 (en) * | 2022-05-30 | 2023-12-07 | 京东方科技集团股份有限公司 | Display substrate and display apparatus |
| EP4366484A1 (en) * | 2022-11-01 | 2024-05-08 | Samsung Display Co., Ltd. | Light emitting display device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957878A (en) * | 2016-07-08 | 2016-09-21 | 京东方科技集团股份有限公司 | Display base board, preparation method thereof, and display apparatus |
| CN106886767A (en) * | 2017-02-23 | 2017-06-23 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
| CN107146850A (en) * | 2016-03-01 | 2017-09-08 | 索尼公司 | Image-forming component, cascade type image-forming component, solid state image pickup device and its driving method |
| CN107316884A (en) * | 2017-06-19 | 2017-11-03 | 武汉天马微电子有限公司 | A kind of display panel and display device |
| CN107579101A (en) * | 2017-08-30 | 2018-01-12 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN107946346A (en) * | 2017-11-24 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | A kind of full frame fingerprint recognition touching display screen |
| CN108346684A (en) * | 2017-12-21 | 2018-07-31 | 友达光电股份有限公司 | Pixel structure and display panel |
-
2018
- 2018-08-07 CN CN201810890650.6A patent/CN109065587A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146850A (en) * | 2016-03-01 | 2017-09-08 | 索尼公司 | Image-forming component, cascade type image-forming component, solid state image pickup device and its driving method |
| CN105957878A (en) * | 2016-07-08 | 2016-09-21 | 京东方科技集团股份有限公司 | Display base board, preparation method thereof, and display apparatus |
| CN106886767A (en) * | 2017-02-23 | 2017-06-23 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
| CN107316884A (en) * | 2017-06-19 | 2017-11-03 | 武汉天马微电子有限公司 | A kind of display panel and display device |
| CN107579101A (en) * | 2017-08-30 | 2018-01-12 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN107946346A (en) * | 2017-11-24 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | A kind of full frame fingerprint recognition touching display screen |
| CN108346684A (en) * | 2017-12-21 | 2018-07-31 | 友达光电股份有限公司 | Pixel structure and display panel |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797472A (en) * | 2019-10-29 | 2020-02-14 | 维沃移动通信有限公司 | Display substrate, display device and manufacturing method of display substrate |
| WO2021082058A1 (en) * | 2019-10-30 | 2021-05-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
| CN111799312A (en) * | 2020-07-14 | 2020-10-20 | 京东方科技集团股份有限公司 | Preparation method of display substrate, display substrate and display device |
| WO2023230750A1 (en) * | 2022-05-30 | 2023-12-07 | 京东方科技集团股份有限公司 | Display substrate and display apparatus |
| EP4366484A1 (en) * | 2022-11-01 | 2024-05-08 | Samsung Display Co., Ltd. | Light emitting display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109065587A (en) | Display base plate and its manufacturing method, display device | |
| US9793252B2 (en) | Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications | |
| US11908924B2 (en) | Semiconductor device including two thin-film transistors and method of fabricating the same | |
| KR102275615B1 (en) | Micro assembled hybrid displays and lighting elements | |
| CN102629621B (en) | A kind of circuit, array base palte and manufacture method, display | |
| CN111370458B (en) | Display substrate, preparation method thereof and display device | |
| CN101375426B (en) | Organic light-emitting transistor device and method for manufacturing same | |
| CN109285870A (en) | Display base plate and preparation method thereof, display panel | |
| US8593058B2 (en) | Organic light-emitting display device | |
| CN107516665A (en) | Organic light-emitting display device and the method for manufacturing the organic light-emitting display device | |
| CN107799535A (en) | Display device and its manufacture method | |
| CN109087922A (en) | Array substrate and preparation method thereof, display panel | |
| CN105304682B (en) | A kind of silicon substrate OLED image transceiver device and preparation method thereof | |
| CN102576811A (en) | Amoled with cascaded OLED structures | |
| JP2004518994A (en) | Display device | |
| US20160172562A1 (en) | Method for forming Circuit-on-Wire | |
| CN103811675A (en) | Flexible organic electroluminescent device and method for fabricating the same | |
| CN109326624A (en) | Pixel circuit, its manufacturing method and display device | |
| CN101375428B (en) | Organic light emitting transistor element and method for manufacturing same | |
| CN109887965A (en) | Display module and its manufacturing method, display device | |
| US9299725B2 (en) | Fabrication process using circuit-on-wire | |
| KR20080030580A (en) | Method of manufacturing integrated light emitting diode displays using biofabrication | |
| CN109192719A (en) | Display device and method for manufacturing the same | |
| CN115295741A (en) | Display substrate, preparation method thereof and display device | |
| CN115735427A (en) | Display substrate, preparation method thereof and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181221 |
|
| RJ01 | Rejection of invention patent application after publication |