CN109192719A - Display device and method for manufacturing the same - Google Patents
Display device and method for manufacturing the same Download PDFInfo
- Publication number
- CN109192719A CN109192719A CN201811034385.8A CN201811034385A CN109192719A CN 109192719 A CN109192719 A CN 109192719A CN 201811034385 A CN201811034385 A CN 201811034385A CN 109192719 A CN109192719 A CN 109192719A
- Authority
- CN
- China
- Prior art keywords
- those
- electrodes
- electrically connected
- electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title description 26
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000011248 coating agent Substances 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 32
- 238000012360 testing method Methods 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 10
- 239000000523 sample Substances 0.000 claims description 4
- 230000003760 hair shine Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 137
- 239000012790 adhesive layer Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 description 29
- 239000004020 conductor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000017105 transposition Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
A display device and a manufacturing method thereof are provided, the display device comprises a substrate and a micro light-emitting element. The substrate is provided with a plurality of sub-regions, wherein at least one of the sub-regions comprises a driving circuit, a switching circuit, an insulating layer, at least two first electrodes, at least two second electrodes and an adhesive layer. The insulating layer has a protrusion and is disposed on the substrate. The first electrode is separately arranged on the protruding part of the insulating layer and is respectively connected with the driving circuit and the switch circuit. The second electrodes are separately arranged on the insulating layer, and one of the second electrodes is electrically connected with the driving circuit. The adhesive layer is arranged on the insulating layer and covers one part of the first electrode and exposes the other part of the first electrode. The micro light-emitting element is arranged on the adhesive layer and corresponds to the protruding part of the insulating layer, wherein the bottom surface of the micro light-emitting element is contacted with the other part of the first electrode.
Description
Technical field
The invention relates to a kind of display device and its manufacturing methods, and have miniature shine in particular to one kind
The display device and its manufacturing method of element.
Background technique
The various types of display field emerge one after another at present, such as: liquid crystal display panel, light-emitting display panel etc..
However, in light-emitting display panel, if using transposition technique by self-emission device transposition when on receiver board, be easy to appear pair
The problem of can not carrying out electrical property and/or optical measurement to self-emission device after the bad and transposition in position, cause self-luminous display surface
The quality and process yields of plate are bad.
Summary of the invention
The present invention provides a kind of display device and its manufacturing method, can improve align bad problem what is more can be right
Element after transposition carries out electrical property and/or optical measurement, and display device may make to have good quality and process yields.
One embodiment of the invention provides a kind of display device comprising substrate, at least an adhesion coating, at least one it is miniature shine
Element, at least a signal wire, at least a read line, at least a control line and at least two power supply lines.Substrate has multiple sons
Region, wherein at least one of subregion includes at least one drive circuit, at least a switching circuit, an at least insulating layer, extremely
Few two first electrodes and at least two second electrodes.Driving circuit is set on substrate.Switching circuit is set on substrate, and is switched
Circuit is mutually separated with driving circuit.Insulating layer is set to one of a part and switching circuit on substrate and covering driving circuit
Point, wherein insulating layer has an at least protrusion.First electrode is separately positioned on the protrusion of insulating layer and being connected to
Driving circuit and switching circuit.Second electrode is separately positioned on insulating layer, and one of second electrode is electrically connected to drive
Dynamic circuit.Adhesion coating is set on insulating layer and a part of each first electrode of covering, a part of each second electrode, driving
Circuit and switching circuit, and adhesion coating exposes another part of each first electrode and another portion of each second electrode respectively
Point.Miniature light-emitting component is set to the protrusion on adhesion coating and corresponding to insulating layer, wherein the bottom surface of miniature light-emitting component connects
Another part of each first electrode is touched, miniature light-emitting component includes at least two semiconductor layers, and semiconductor layer is electrically connected
In another part of second electrode.Signal wire is set on substrate and is electrically connected at driving circuit.Read line and control line point
From being set on substrate and be electrically connected at switching circuit.Power supply line it is separately positioned on substrate and be electrically connected in
Miniature light-emitting component and driving circuit, wherein power supply line is respectively provided with different potentials when being powered.
One embodiment of the invention provides a kind of manufacturing method of display device comprising following steps.It provides as described above
Display device.Two separately positioned third electrodes are formed on corresponding semiconductor layer, wherein wherein the one of third electrode
Person's setting one of is not contacted with first electrode in the semiconductor layer.Enable driving circuit and switching circuit, so that the first electricity
Pole is electrically connected to each other by miniature light-emitting component, confirms whether miniature light-emitting component is successfully transferred to first electrode whereby
On.
Based on above-mentioned, in the display device and its manufacturing method of the above embodiment of the present invention, miniature light-emitting component setting
In the protrusion on adhesion coating and corresponding to insulating layer, wherein the bottom surface of miniature light-emitting component contacts another portion of each first electrode
Point.In this way, which first electrode can electrically be connected each other by miniature light-emitting component when enable driving circuit and switching circuit
It connects, confirms whether miniature light-emitting component is successfully transferred in first electrode whereby, and then improve and align bad problem, more very
Person can carry out electrical property and/or optical measurement to the element after transposition, display device may make to have good quality and technique good
Rate.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of the display device of one embodiment of the invention.
Fig. 2A and Fig. 2 B is the circuit diagram of the display device of one embodiment of the invention.
Fig. 3 A and Fig. 3 B are the circuit diagram of the display device of another embodiment of the present invention.
Fig. 4 A to Fig. 4 C is the diagrammatic cross-section of the manufacturing method of the display device of one embodiment of the invention.
Wherein, appended drawing reference:
100: display device
S: substrate
ADL: adhesion coating
MLED: miniature light-emitting component
SL: signal wire
GL: scan line
DL: data line
RL: read line
CL: control line
SR: subregion
DC: driving circuit
SC: switching circuit
SE: switch element
IL1, IL2: insulating layer
E1: first electrode
E2: second electrode
E3: third electrode
T1, T2: active component
C: capacitor
PP: protrusion
SE1, SE2: semiconductor layer
AL: active layer
CE: connection electrode
G1, G2, SG: control terminal
S1, S2, SS: first end
D1, D2, SD: second end
C1, C2, C3, C4: contact hole
A, B: endpoint
VSS, VDD: power supply line
Specific embodiment
Structural principle and working principle of the invention are described in detail with reference to the accompanying drawing:
Hereinafter with reference to the present embodiment schema more fully to illustrate the present invention.However, the present invention also can with it is various not
Same form embodies, and should not necessarily be limited by embodiments described herein.The thickness of layer and region in schema can be in order to clearly rise
See and amplifies.The same or similar reference number indicates the same or similar element, and following paragraphs will be repeated no longer one by one.Separately
Outside, the direction term being previously mentioned in embodiment, such as: upper and lower, left and right, front or rear etc. are only the directions with reference to annexed drawings.
Therefore, the direction term used is intended to be illustrative and not intended to limit the present invention.
In the accompanying drawings, for the sake of clarity, it is exaggerated the thickness in layer, film, panel, region etc..Throughout the specification, phase
Same appended drawing reference indicates identical element.It should be appreciated that ought such as layer, film, region or substrate element be referred to as another
It when element "upper" or " being connected to " another element, can be connect directly on another element or with another element, or intermediate
Element can be there is also.On the contrary, when element is referred to as " directly on another element " or when " being directly connected to " another element, no
There are intermediary elements.As it is used herein, " connection " can refer to physics and/or electric connection.However, " electric connection " or
" coupling (connecing) " can there are other elements between two element.
" about " used herein, " approximation " or " substantial " includes described value and determines in those of ordinary skill in the art
Average value in the acceptable deviation range of particular value, it is contemplated that the measurement that is discussed and error relevant to measurement it is specific
Quantity (that is, limitation of measuring system).For example, " about " can indicate in one or more standard deviations of described value, or ±
30%, in ± 20%, ± 10%, ± 5%.Furthermore " about " used herein, " approximation " or " substantial " can according to optical property,
Etching property or other properties, to select more acceptable deviation range or standard deviation, and it is suitable not have to a standard deviation
With whole properties.
Unless otherwise defined, all terms (including technical and scientific term) used herein have leads with belonging to the present invention
The normally understood identical meaning of the those of ordinary skill in domain.It will be further appreciated that such as in usually used dictionary
Those of definition term should be interpreted as having and their meanings in the relevant technologies and context of the invention are consistent
Meaning, and will not be interpreted Utopian or excessively formal meaning, unless clearly definition so herein.
Exemplary embodiment is described herein with reference to the sectional view of the schematic diagram as idealized embodiments.It therefore, can be with
Anticipate the change in shape of the diagram of the result as such as manufacturing technology and/or tolerance.Therefore, embodiment as described herein is not
It should be construed as limited to the specific shape in region as shown here, but including such as form variations caused by manufacturing.Example
Such as, it is illustrated and described as flat region usually and can have coarse and/or nonlinear characteristic.Acute angle shown in addition, can be with
It is round.Therefore, region shown in figure is substantially schematical, and their shape is not intended to the essence for showing region
True shape, and not be intended to limit claim.
Fig. 1 is the diagrammatic cross-section of the display device of one embodiment of the invention.Fig. 2A and Fig. 2 B is one embodiment of the invention
Display device circuit diagram.Fig. 3 A and Fig. 3 B are the circuit diagram of the display device of another embodiment of the present invention.
Referring to Fig. 1, Fig. 2A and Fig. 2 B, display device 100 may include a substrate S, at least adhesion coating ADL, at least
One miniature light-emitting component MLED, at least a signal wire SL (such as: scan line GL or data line DL), an at least read line RL, extremely
A few control line CL and at least two power supply line VSS, VDD.
In the present embodiment, substrate S has multiple subregion SR.In this present embodiment, it is with a sub-regions SR of Fig. 1
Example, but not limited to this.In other embodiments can also be more than one subregion SR.At least one of subregion SR can be wrapped
Include an an at least one drive circuit DC, at least switching circuit SC, at least insulating layer IL1, at least two first electrode E1 and at least
Two second electrode E2.
Driving circuit DC may be disposed on substrate S.The driving circuit DC of the present embodiment be with include two active component T1,
It is illustrated (as shown in Figure 2 B) for T2 and capacitor C (being represented by 2T1C), but invention is not limited thereto.At other
In embodiment, driving circuit DC may also comprise three active components and one or two capacitor C (being represented by 3T1C/2C), four
A active component and one or two capacitor C (being represented by 4T1C/2C), five active components and one or two capacitor C (can
Be expressed as 5T1C/2C), six active components and one or two capacitor C (being represented by 6T1C/2C) or other are suitable
Line configuring.In some embodiments, thin film transistor (TFT) (TFT), such as bottom can be used in active component T1, T2 at least one of them
Gate type transistor, top gate-type transistors, three-dimensional transistor npn npn or other suitable transistors.The grid of the transistor of bottom gate type
Positioned at the lower section of semiconductor layer, the grid of top gate-type transistors is located at the top of semiconductor layer, and thirty years of age bulk crystal pipe is partly led
The extension of body layer channel is non-to be located at a plane.Semiconductor layer can be single or multi-layer structure, and its material includes amorphous silicon, crystallite
Silicon, nanocrystal silicon, polysilicon, monocrystalline silicon, organic semiconducting materials, oxide semiconductor material, carbon nanotubes/bar, perovskite,
Or other suitable materials or combination above-mentioned.
Switching circuit SC may be disposed on substrate S, and switching circuit SC and driving circuit DC is mutually separated.Switching circuit SC can
Including an at least switch element SE, wherein the switching circuit SC of the present embodiment is said for including a switch element SE
It is bright (as shown in Figure 1B), but invention is not limited thereto.In other embodiments, switching circuit SC may also comprise multiple switch member
Part SE either suitable number of switch element SE other elements engaged therewith.In the present embodiment, switch element SE can be
Active component (such as: thin film transistor (TFT)), diode or other suitable elements.Wherein, switch element SE can be selected above-mentioned
Active component type and/or semiconductor material, and the two can be substantially the same or different.
Insulating layer IL1 may be disposed at S on substrate and cover a part of driving circuit DC and a part of switching circuit SC,
Wherein insulating layer IL1 can have an at least protrusion PP.Insulating layer IL1 can be single or multi-layer structure, and its material can be
Inorganic Dielectric Material, organic dielectric materials or other suitable materials or combination above-mentioned.Inorganic Dielectric Material can be oxygen
SiClx, silicon nitride, silicon oxynitride or other suitable materials or aforementioned at least two kinds of combination；Organic dielectric materials can be
Photoresist, polyimides system resins, epoxy system resin, acryl system resin or other suitable materials are at least two kinds aforementioned
Combination.In the present embodiment, e.g., about 2 μm of the height of protrusion PP, but invention is not limited thereto.In other embodiments
In, the height of protrusion PP can be adjusted according to design, it is to be noted that, the height of protrusion PP is unsuitable excessively high, to keep away
Exempt from the aftermentioned adhesion coating ADL being previously mentioned it is too thick and be unfavorable for display panel slimming design.
First electrode E1 is separable to be set on the protrusion PP of insulating layer IL1 and is connected to driving circuit DC and opens
Powered-down road SC.In the present embodiment, first electrode E1 can be connected by contact hole C1, the C2 being arranged in insulating layer IL1 respectively
To driving circuit DC and switching circuit SC, but not limited to this.First electrode E1 can be single or multi-layer structure, and its material can be
Nontransparent conductive material, transparent or semitransparent conductive material, organic conductive material or other suitable conductive materials or aforementioned
At least two kinds of combination.Nontransparent conductive material includes metal, alloy or other suitable materials, oxide above-mentioned, aforementioned
Nitride, nitrogen oxides above-mentioned or aforementioned at least two kinds of combination.Transparent or semitransparent conductive material is aoxidized comprising indium tin
The metal or alloy of object, indium-zinc oxide, indium gallium zinc oxide, indium gallium oxide, thickness less than 60 angstroms, carbon nanotubes/bar or
Other suitable materials or aforementioned at least two kinds of combination.Organic conductive material includes that organic material mixes nontransparent conduction material
The particle of material and/or transparent or semitransparent conductive material, intrinsic conducting polymer (or being conjugacy conducting polymer), polymerization
Object couples metal or other suitable materials or aforementioned at least two kinds of combination.
Second electrode E2 is separable to be set on insulating layer IL1, and one of second electrode E2 is electrically connected at driving
Circuit DC.In the present embodiment, one of second electrode E2 can electrically connect by the contact hole C3 being arranged in insulating layer IL1
It is connected to driving circuit DC, but not limited to this.Second electrode E2 can be the structure of single-layer or multi-layer, and its material can be selected aforementioned the
Material described in one electrode E1, and the two can be substantially the same or different.In some embodiments, another in second electrode E2
Person is electrically connected at power supply line VDD, such as: the other of second electrode E2 can be by being arranged in insulating layer IL1
Contact hole C4 is electrically connected to power supply line VDD, but not limited to this.
Adhesion coating ADL may be disposed on insulating layer IL1 and a part of each first electrode E1 of covering, each second electrode E2
A part, driving circuit DC and switching circuit SC, and adhesion coating ADL exposes another part of each first electrode E1 respectively
With another part of each second electrode E2.Adhesion coating ADL itself is in addition to effect of adhering, preferably, it may have substantially insulate
Effect (such as: resistivity is greater than 108 ohm of centimetres, but not limited to this), it can be single or multi-layer structure, and its material can
To be insulating materials, such as acryl resin (acrylic resin), epoxy resin (epoxy), glass cement (glass
) or the combination of other suitable materials or previous materials frit.
Miniature light-emitting component MLED is set on adhesion coating ADL and is substantially corresponding to the protrusion PP of insulating layer IL1,
In miniature light-emitting component MLED bottom surface contact each first electrode E1 another part (such as: the portion exposed by adhesion coating ADL
Point), and miniature light-emitting component MLED may include at least two semiconductor layer SE1, SE2, wherein semiconductor layer SE1, SE2 can be electric respectively
Property is connected to another part of second electrode E2.Wherein, the size of miniature light-emitting component less than 100 microns and is greater than 0 micron.Compared with
Goodly, the size of miniature light-emitting component less than 50 microns and is greater than 0 micron.As enable driving circuit DC and switching circuit SC,
First electrode E1 can be electrically connected to each other by miniature light-emitting component MLED, confirm whereby miniature light-emitting component MLED whether at
Function is transferred on first electrode E1, and then is improved and aligned bad problem, so that display device has good quality and technique
Yield.For example, when miniature light-emitting component MLED is successfully transferred on first electrode E1, separately positioned first electrode E1
It can be electrically connected to each other via miniature light-emitting component MLED；And when miniature light-emitting component MLED is transferred to first electrode not successfully
When on E1, separately positioned first electrode E1 can not be electrically connected to each other via miniature light-emitting component MLED.Therefore, aforementioned mistake
Electrical measurement whether journey can be considered connecting miniature light-emitting component MLED with first electrode E1.
In addition to this, miniature light-emitting component MLED of the transposition on substrate S can be used to be electrically connected the second electricity being formed
Pole E2 connection line (such as: before connection electrode CE shown in FIG. 1), so that it may confirm by first electrode E1 it is miniature shine
Whether element MLED shifts success, so can accurately grasp process yields after flood tide shifting process, and to not shifting
Successful miniature light-emitting component MLED is repaired, and then promotes the quality and process yields of display device.In some embodiments
In, the miniature hair shifted not successfully is e.g. first removed to the method that successful miniature light-emitting component MLED is repaired is not shifted
Optical element MLED is substituted again by the new miniature light-emitting component MLED of transfer above-mentioned do not shift successful miniature luminous member later
Part MLED, but invention is not limited thereto.In addition, due to be not required to confirm by miniature light-emitting component MLED is lighted its whether at
Function is transferred on substrate S, therefore, even if miniature light-emitting component MLED not yet forms the aftermentioned third electrode E3 that will be mentioned, also can
It is enough to confirm whether miniature light-emitting component MLED shifts success by first electrode E1.
In some embodiments, between the bottom surface of miniature light-emitting component MLED and first electrode E1 on protrusion PP
There is no adhesion coating ADL, so may make between first electrode E1 and miniature light-emitting component MLED have it is good in electrical contact,
The case where to avoid misinterpretation is generated.
In some embodiments, the contact area of miniature light-emitting component MLED and adhesion coating ADL can be greater than miniature luminous member
The contact area of part MLED and first electrode E1 so aloow miniature light-emitting component MLED to be stably fixed to adhesion coating
On ADL, but not limited to this.In further embodiments, the contact area of miniature light-emitting component MLED and adhesion coating ADL can also be big
In frontal projected area of the protrusion PP on miniature light-emitting component MLED of insulating layer IL1, such miniature light-emitting component MLED energy
It is enough more stably fixed on adhesion coating ADL, but not limited to this.
In some embodiments, the size of miniature light-emitting component MLED can be greater than or substantially equal to 100 μm 2 and be less than or
Substantially equal to 10000 μm 2, but not limited to this.In further embodiments, the size of miniature light-emitting component MLED can be greater than or
Substantially equal to 100 μm 2 and it is less than or substantially equal to 400 μm 2, but not limited to this.
In some embodiments, semiconductor layer SE1 can have opposite electrical property with semiconductor layer SE2.For example, it partly leads
Body layer SE1 is p-type doping semiconductor layer and n-type doping semiconductor layer one of them；And semiconductor layer SE2 is that p-type doping is partly led
Body layer and n-type doping semiconductor layer wherein another one.P-type doping semiconductor layer can be single or multi-layer structure, and its material example
P-type gallium nitride (p-GaN), p-type GaAs (GaAs), p-type silicon carbide (SiC), p-type gallium phosphide (GaP), p-type zinc selenide in this way
(ZnSe), p-type zinc sulphide (ZnS), p-type organic semiconducting materials or other suitable materials.N-type doping semiconductor layer can be
Single or multi-layer structure, and its material be, for example, n type gallium nitride (n-GaN), N-type GaAs (GaAs), N-type silicon carbide (SiC),
N-type gallium phosphide (GaP), N-type zinc selenide (ZnSe), N-type zinc sulphide (ZnS), N-type organic semiconducting materials or other suitable
Material.
In the present embodiment, miniature light-emitting component MLED optionally includes being arranged in semiconductor layer SE1 and semiconductor
Active layer AL between layer SE2, but not limited to this.In some embodiments, active layer AL can be by multilayer well layer (well
Layer) replace the multiple quantum well layer (multiple for stacking and constituting with barrier (barrier layer) institute
Quantum well, MQW), but invention is not limited thereto.Wherein, there are in well layer relative to barrier layer the feelings compared with low band gap
Under condition, barrier layer can limit electronics and electric hole and combine in well layer to launch photon.In further embodiments, active layer AL
Structure can also cross for the electronics electricity hole of semiconductor layer SE1 and semiconductor layer SE2 the combined area to be formed.In other embodiments
In, active layer AL can also be single quantum well layer (single quantum well, SQW), but not limited to this.In the present embodiment
In, active layer AL can be multiple quantum well layer, and wherein the well layer in multiple quantum well layer can be gallium indium nitride layer (InGaN),
And it is example that the barrier layer in multiple quantum well layer, which can be gallium nitride layer (GaN), but not limited to this.
In the present embodiment, miniature light-emitting component MLED optionally further includes insulating layer IL2, but not limited to this.Absolutely
Edge layer IL2 can be formed in the portion of semiconductor layer SE1 and side wall, the portion of semiconductor layer SE2 and side wall and have
The side wall of active layer AL (if selectivity exists), it can be ensured that electronics and electric hole combine in active layer AL, whereby improving luminous efficiency.
Insulating layer IL2 can be single or multi-layer structure, and its material may preferably be Inorganic Dielectric Material, such as silica, nitridation
Silicon, silicon oxynitride, other suitable materials, or combinations thereof, but not limited to this.
In the present embodiment, the part semiconductor layer SE1 and semiconductor layer SE2 be not overlapped or can be described as semiconductor layer SE1 and
Semiconductor layer SE2 part is overlapped.In part embodiment, miniature light-emitting component MLED optionally further includes two third electricity
Pole E3, it is separately positioned on corresponding semiconductor layer SE1, SE2.The miniature light-emitting component MLED of the present embodiment is using level
It is illustrated for formula light emitting diode, invention is not limited thereto.In other embodiments, miniature light-emitting component MLED can also
Other suitable light emitting diodes are used according to design.Third electrode E3 can be the structure of single-layer or multi-layer, and its material is optional
Select conductive material above-mentioned.
In some embodiments, the one of them that probe contact third electrode E3 can be used, to miniature light-emitting component
MLED tests, and confirms whether this miniature light-emitting component MLED shines whereby.For example, the accessible setting of probe is partly being led
Third electrode E3 on body layer SE2, and miniature light-emitting component is driven by above-mentioned first electrode E1 and/or third electrode E3
MLED carries out optic test to miniature light-emitting component MLED whereby.In this way, in addition to above-mentioned electrical testing (such as: first
Electrode E1 is electrically connected to each other by miniature light-emitting component MLED) except, it in some embodiments, can also be by above-mentioned light
Test is learned to confirm whether miniature light-emitting component MLED is shinny, more can accurately grasp process yields, to promote display device
Quality.
In some embodiments, can be used to be electrically connected second electrode E2 via above-mentioned electrical testing and then formation
With the connection line of third electrode E3, but invention is not limited thereto.In further embodiments, can also be used to electrically being formed
It connects the connection line of second electrode E2 and third electrode E3 and then carries out above-mentioned electrical testing and/or optic test.?
It, can also be before and after forming the connection line for being used to be electrically connected second electrode E2 and third electrode E3 in other embodiments
All carry out above-mentioned electrical testing and/or optic test.
In some embodiments, can be used to be electrically connected via above-mentioned electrical testing and optic test and then formation
The connection line of second electrode E2 and third electrode E3.In the present embodiment, above-mentioned connection line can be for example and subsequent will mention
The connection electrode CE (as shown in Figure 1) arrived.
In some embodiments, another part (such as: by the part that adhesion coating ADL is exposed) of second electrode E2 can divide
Corresponding semiconductor layer SE1, SE2 are not electrically connected at via third electrode E3.For example, display device 100 is alternative
Further include at least two connection electrode CE, another part of second electrode E2 can be respectively via connection electrode CE and third electrode E3
It is electrically connected to corresponding semiconductor layer SE1, SE2.Connection electrode CE can be single or multi-layer structure, and its material may be selected to be
Conductive material above-mentioned.
In the present embodiment, signal wire SL may be disposed on substrate S and be electrically connected to driving circuit DC.For example,
Signal wire SL may include that scan line GL and data line DL may be disposed on substrate S and be electrically connected to driving circuit DC (such as Fig. 2A
It is shown), but not limited to this.In other embodiments, signal wire SL also may include the route of other needs, such as: common electrode
Line or other suitable routes.
In the present embodiment, read line RL and control line CL is separable is set on substrate S and is electrically connected at switch electricity
Road SC.For example, separable for being set on substrate S and being connected to switch element SE of read line RL and control line CL
Two end SD and control terminal SG (as shown in Figure 2 B).
In the present embodiment, power supply line VSS, VDD is separately positioned in S on substrate, wherein power supply line VDD and electricity
Source supply line VSS is electrically connected in miniature light-emitting component MLED and driving circuit DC (as shown in Figure 2 B), and when being powered,
Power supply line VDD and power supply line VSS are respectively provided with different current potentials.
Hereinafter, will with Fig. 1, Fig. 2A and Fig. 2 B come illustrate driving circuit DC, switching circuit SC, signal wire SL (such as:
Scan line GL and data line DL), read line RL, control line CL, first electrode E1, second electrode E2, third electrode E3, miniature hair
Connection relationship between optical element MLED and power supply line VSS, VDD, but invention is not limited thereto.In other embodiments
In, the connection relationship between said elements can also be adjusted according to design.
Referring to Fig. 1, Fig. 2A and Fig. 2 B, driving circuit DC may include active component T1, active component T2 and capacitor C
(being represented by 2T1C), and signal wire SL may include at least scan line GL and an at least data line DL, wherein each active member
Part T1, T2 include an at least control terminal G1, G2, at least first end S1, a S2 and at least second end D1, D2.For example, have
Source element T1 may include control terminal G1, first end S1 and second end D1；And active component T2 may include control terminal G2, first end S2
With second end D2.In some embodiments, control line CL and scan line GL can be electrically connected at same scan signal source, but this hair
It is bright to be not limited.In further embodiments, control line CL and scan line GL can be electrically connected at different scanning signal source.
In the present embodiment, control terminal G1, G2 of the one of them of active component T1, T2 can be electrically connected at scan line
GL；And the first end S1 of the one of them of active component T1, T2 can be electrically connected at data line DL.Active component T1, T2 its
Control terminal G1, G2 of middle another one can be electrically connected at second end D1, D2 of the one of them of active component T1, T2.Citing comes
It says, the control terminal G1 of active component T1 can be electrically connected with scan line GL, and the first end S1 of active component T1 can be with data line
DL is electrically connected；And the control terminal G2 of active component T2 can be electrically connected at the second end D1 of active component T1, but not limited to this.
In the present embodiment, first end S1, S2 of the wherein another one of active component T1, T2 can be electrically connected at miniature hair
One of them, the one of them of the one of them of first electrode E1 and second electrode E2 of the third electrode E3 of optical element MLED.
Second end D1, D2 of the wherein another one of active component T1, T2 can be electrically connected at wherein the one of power supply line VSS, VDD
Person, and the one of them of the third electrode E3 of miniature light-emitting component MLED can be electrically connected at power supply line VSS, VDD
Wherein another one.For example, the first end S2 of active component T2 can be electrically connected at the third being arranged on semiconductor layer SE2
Electrode E3, be electrically connected this third electrode E3 second electrode E2 (such as: the second electrode E2 at [-] shown in FIG. 1) and
The first electrode E1 (such as: at [A] shown in FIG. 1) of terminal A shown in corresponding diagram 2B, is provided on semiconductor layer SE2
Third electrode E3 be electrically connected at power supply line VDD (such as: at [+] shown in FIG. 1)；And the second end of active component T2
D2 can be electrically connected at power supply line VSS (such as: at [-] shown in FIG. 1).
In the present embodiment, switching circuit SC may include switch element SE, and switch element SE may include at least one control
An an end SG, at least first end SS processed and at least second end SD.For example, as shown in Figure 2 B, switch element SE may include control
End SG, first end SS and second end SD processed.The first end SS of switch element SE can be electrically connected at the wherein another of first electrode E1
One；And the second end SD of switch element SE is electrically connected at read line RL.For example, the first end SS of switch element SE can
It is electrically connected at the first electrode E1 (such as: at [B] shown in FIG. 1) of terminal B shown in corresponding diagram 2B；And switch element SE
Second end SD is electrically connected at read line RL.
Based on above-mentioned, on adhesion coating ADL and correspond to the protrusion of insulating layer IL1 since miniature light-emitting component MLED is set to
Portion PP, and the bottom surface of miniature light-emitting component MLED contacts first electrode E1.In this way, as enable driving circuit DC and switch
When circuit SC, first electrode E1 can be electrically connected to each other by miniature light-emitting component MLED, confirm miniature light-emitting component whereby
Whether MLED shifts success, and then improves and align bad problem, so that display device 100 has good quality and technique good
Rate.
Fig. 3 A and Fig. 3 B are the circuit diagram of the display device of another embodiment of the present invention, wherein shown in Fig. 3 A and Fig. 3 B
Circuit diagram it is similar to circuit diagram shown in Fig. 2A and Fig. 2 B, the difference is that active component T2 shown in Fig. 2A and 2B is
P-type TFT, and active component T2 shown in Fig. 3 A and Fig. 3 B is N-type TFT, therefore same or similar element uses same or similar mark
Number, connection relationship, material and its technique of remaining component are not repeated below in hereinbefore at large being described
It repeats.
A and Fig. 3 B referring to figure 3., in this embodiment, the first end S2 of active component T2 can be electrically connected at setting and exist
Third electrode E3 on semiconductor layer SE1, be electrically connected this third electrode E3 second electrode E2 (such as: [-] shown in FIG. 1
The second electrode E2 at place) and corresponding diagram 3B shown in terminal A first electrode E1, be provided on semiconductor layer SE1
Third electrode E3 is electrically connected at power supply line VDD；And the second end D2 of active component T2 can be electrically connected at power supply supply
Line VSS.In other embodiments, active component T1, T2 one of them can be N-type TFT, and active component T1, T2 are wherein another
Person can be p-type TFT.In previous embodiment, switch element SE according to active component T1, T2 of each embodiment polarity type
Come determine its for N-type TFT or p-type TFT, but not limited to this.In other embodiments, switch element SE can also come according to design requirement
Select TFT polarity type appropriate.
Hereinafter, the manufacturing method for display device 100 shown in FIG. 1 being illustrated with Fig. 4 A to 4C, but not limited to this.
In other embodiments, it can also be adjusted according to design.It should be noted that same or similar element uses same or similar mark
Number, and its connection relationship, material, effect and its technique is in hereinbefore at large being described, therefore be not repeated below
It repeats.
Fig. 4 A to Fig. 4 C is the diagrammatic cross-section of the manufacturing method of the display device of one embodiment of the invention.
Firstly, A referring to figure 4., in formed on substrate S driving circuit DC, switching circuit SC and power supply line VSS,
VDD.Then, in the insulating layer for forming covering driving circuit DC, switching circuit SC and power supply line VSS, VDD on substrate S
IL1, wherein insulating layer IL1 has protrusion PP.In some embodiments, the forming method of insulating layer IL1 can be prior to base
The insulation material layer that covering driving circuit DC, switching circuit SC and power supply line VSS, VDD are formed on plate S, later again to upper
The insulation material layer stated carries out Patternized technique, to form the insulating layer IL1 with protrusion PP.Patternized technique is e.g. micro-
Shadow technique and/or etch process, however, the present invention is not limited thereto.
Then, first electrode E1 and second electrode E2 are formed on insulating layer IL1, wherein first electrode E1 is formed in
On the protrusion PP of insulating layer IL1 and it is separated from each other；And second electrode E2 is formed on insulating layer IL1 and is separated from each other.?
In the present embodiment, first electrode E1 can be electrically connected to driving circuit DC and switching circuit SC by contact hole C1, C2 respectively；And
Second electrode E2 can be electrically connected to driving circuit DC and power supply line VSS, VDD by contact hole C3, C4 respectively.First electricity
The forming method of pole E1, second electrode E2 and contact hole C1~C4 can be prior to forming contact hole C1~C4 in insulating layer IL1.
Then, conductive material is formed on insulating layer IL1 and is inserted in above-mentioned contact hole C1~C4.Then, on insulating layer IL1
Conductive material carry out Patternized technique, to form first electrode E1, second electrode E2 and contact hole C1~C4.In the present embodiment
In, first electrode E1 and second electrode E2 can be formed by same patterned conductive layer, but invention is not limited thereto.
Then, B referring to figure 4., in forming a part, each second electrode for covering each first electrode E1 on insulating layer IL1
E2, driving circuit DC and switching circuit SC, and adhesion coating ADL exposes another part of each first electrode E1.
Later, C referring to figure 4., by miniature light-emitting component MLED transposition on adhesion coating ADL and corresponding to insulating layer IL1
Protrusion PP display device is provided.In the present embodiment, above-mentioned display device 100 is not yet in miniature light-emitting component MLED
It is upper to form third electrode E3 or be for connection to the connection line of second electrode E2 and third electrode E3, but the present invention not as
Limit.In other embodiments, in the miniature light-emitting component MLED of transposition before on adhesion coating ADL, third electrode E3 can distinguish shape
At on corresponding semiconductor layer SE1, SE2, so may make that technique is relatively simple and can be avoided the technique on substrate S
Other components impact.In some embodiments, can be used micro-mechanical device (such as: vacuum cups is other suitable
Device) either the methods of seal transfer shifts miniature light-emitting component MLED.In some embodiments, following steps can be used
It forms miniature light-emitting component MLED and transfers them on adhesion coating ADL.Firstly, the mode of extension can be used by miniature luminous member
Part MLED is formed on growth substrate (such as: sapphire substrate, silicon substrate or other suitable substrates), is recycled later micro-
Array is picked up by miniature light-emitting component MLED transposition on adhesion coating ADL.
The bottom surface of miniature light-emitting component MLED can contact another part of each first electrode E1, wherein miniature light-emitting component
MLED may include semiconductor layer SE1, SE2, and semiconductor layer SE1 and semiconductor layer SE2 are electrically connected in second electrode E2.
In the present embodiment, miniature light-emitting component MLED more may include be formed in it is active between semiconductor layer SE1 and semiconductor layer SE2
Layer AL.
Then, it please continue to refer to Fig. 4 C, tests to miniature light-emitting component MLED, to confirm miniature light-emitting component MLED
Whether successfully it is transferred on first electrode E1.In the present embodiment, can by enable driving circuit DC and switching circuit SC so that
First electrode E1 is electrically connected to each other by miniature light-emitting component MLED, confirms whether miniature light-emitting component MLED succeeds whereby
Transfer.
Then, two separately positioned third electrode E3 are formed on corresponding semiconductor layer SE1, SE2, wherein third is electric
The one of them setting of pole E3 is not on semiconductor layer SE1, SE2 one of are contacted with first electrode E1.In some embodiments,
Third electrode E3 can also formed and then electrical detection as described above is carried out to miniature light-emitting component MLED.In some realities
It applies in example, it is possible to provide probe contacts the one of them of third electrode E3, to test to miniature light-emitting component MLED, whereby
Confirm whether this miniature light-emitting component MLED shines (optical detection).
Later, connection electrode CE is formed on part adhesion layer ADL and the miniature light-emitting component MLED of part, is such as schemed with being formed
Display device 100 shown in 1.In the present embodiment, adhesion layer ADL covers a portion of second electrode E2 and exposes the
Another part of two electrode E2, wherein another part of second electrode E2 can be electrically connected in semiconductor layer SE1 and partly lead
Body layer SE2.For example, another part of second electrode E2 can be electrically connected via connection electrode CE and third electrode E3 respectively
In corresponding semiconductor layer SE1, SE2.For the display device completed as previously described when display, current flowing is in miniature light-emitting component
Semiconductor layer SE1, SE2 of MLED is easier to transmit via connection electrode CE with third electrode E3 connection path.
In conclusion in the display device and its manufacturing method of above-described embodiment, since miniature light-emitting component is set to
Protrusion on adhesion coating and corresponding to insulating layer, and the bottom surface of miniature light-emitting component contacts another portion of each first electrode
Point.In this way, which first electrode can electrically be connected each other by miniature light-emitting component when enable driving circuit and switching circuit
Connect, confirm whether miniature light-emitting component shifts success whereby, and then improve and align bad problem, what is more, can be to transposition after
Element carry out electrical property and/or optical measurement so that display device has good quality and process yields.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
It knows those skilled in the art and makes various corresponding changes and modifications, but these corresponding changes and change in accordance with the present invention
Shape all should fall within the scope of protection of the appended claims of the present invention.
Claims (15)
1. a kind of display device characterized by comprising
One substrate, the substrate have multiple subregions, and wherein at least one of those subregions include:
At least one drive circuit is set on the substrate；
An at least switching circuit is set on the substrate, and at least one driving circuit phase of an at least switching circuit and this point
Every；
An at least insulating layer is set on the substrate and covers at least a part of one drive circuit and at least one switch electricity
The a part on road, wherein an at least insulating layer has an at least protrusion；
At least two first electrodes, it is separately positioned on an at least protrusion for an at least insulating layer and being connected to this extremely
Few one drive circuit and an at least switching circuit；And
At least two second electrodes, it is separately positioned on this at least an insulating layer, and those at least one of two second electrodes electricity
Property is connected at least one drive circuit；
An at least adhesion coating, be set on an at least insulating layer and cover respectively a part of the first electrode, respectively this second
A part of electrode, at least one drive circuit and an at least switching circuit, and this at least an adhesion coating exposes respectively
Respectively another part of another part of the first electrode and the respectively second electrode；
At least one miniature light-emitting component, be set on an at least adhesion coating and correspond to an at least insulating layer this at least one
Protrusion, wherein a bottom surface of at least one miniature light-emitting component contacts the another part of the respectively first electrode, this at least one
Miniature light-emitting component includes at least two semiconductor layers, and those at least two semiconductor layers be electrically connected in those at least 2 the
Those another part of two electrodes；
An at least signal wire is set on the substrate and is electrically connected at at least one drive circuit；
An at least read line and an at least control line, it is separately positioned on the substrate and being electrically connected at at least one switch electricity
Road；And
At least two power supply lines, it is separately positioned on the substrate and be electrically connected in at least one miniature light-emitting component with
At least one drive circuit, wherein at least two power supply lines are respectively provided with different potentials for those when being powered.
2. display device as described in claim 1, which is characterized in that wherein those at least two semiconductor layer parts are not overlapped,
And at least one miniature light-emitting component further includes:
Two third electrodes, it is separately positioned on those corresponding at least two semiconductor layers.
3. display device as described in claim 1, which is characterized in that wherein those another portions of those at least two second electrodes
Divide and is electrically connected at those corresponding at least two semiconductor layers via those third electrodes respectively.
4. display device as claimed in claim 3, which is characterized in that further include:
At least two connection electrodes, those another part of those at least two second electrodes are respectively via those third electrodes and those
At least two connection electrodes are electrically connected at those corresponding at least two semiconductor layers.
5. display device as described in claim 1, which is characterized in that wherein this at least one drive circuit includes at least two active
Element, an at least signal wire include at least scan line and an at least data line, and respectively the active component includes at least one control
End, at least a first end and an at least second end processed,
Wherein an at least control terminal for those at least one of them of two active components is electrically connected at at least scan line,
An at least first end for those at least one of them of two active components is electrically connected at an at least data line,
An at least control terminal for the wherein another one of those at least two active components is electrically connected at those at least two active yuan
An at least second end for the one of them of part,
An at least first end for the wherein another one of those at least two active components be electrically connected at this at least one it is miniature shine
The one of them of those third electrodes of element, those at least one of them of two first electrodes and those at least two second electrodes
One of them,
An at least second end for the wherein another one of those at least two active components is electrically connected at the confession of those at least two power supplys
The one of them of line is answered, and the one of them of those third electrodes of at least one miniature light-emitting component is electrically connected at those extremely
The wherein another one of few two power supply lines.
6. display device as claimed in claim 5, which is characterized in that wherein an at least switching circuit includes at least one switch
Element, an at least switch element include an at least control terminal, an at least first end and an at least second end, wherein this at least one
An at least first end for switch element is electrically connected at the wherein another one of those at least two first electrodes, and this at least one opens
At least second end for closing element is electrically connected at an at least read line.
7. display device as claimed in claim 6, which is characterized in that wherein an at least control line and at least scan line
It is electrically connected at same scan signal source.
8. display device as claimed in claim 6, which is characterized in that wherein an at least control line and at least scan line
It is electrically connected at different scanning signal source.
9. display device as described in claim 1, which is characterized in that wherein the bottom surface of at least one miniature light-emitting component with
An at least adhesion coating is not present between those at least two first electrodes on this at least a protrusion.
10. a kind of manufacturing method of display device characterized by comprising
Display device as described in claim 1 is provided；
Two separately positioned third electrodes are formed on those corresponding at least two semiconductor layers, wherein those third electrodes
One of them setting one of does not contact in those at least two semiconductor layers with those at least two first electrodes；And
Enable at least one drive circuit and an at least switching circuit so that those at least two first electrodes by this at least one
Miniature light-emitting component and be electrically connected to each other, confirm whether at least one miniature light-emitting component is successfully transferred to those at least whereby
In two first electrodes.
11. the manufacturing method of display device as claimed in claim 10, which is characterized in that further include:
One probe is provided, the one of them of those third electrodes is contacted, to test at least one miniature light-emitting component, by
This confirms whether at least one miniature light-emitting component shines.
12. such as the manufacturing method of display device as claimed in claim 11, which is characterized in that further include:
At least two connection electrodes are formed on a part at least adhesion coating and the partly at least one miniature light-emitting component, wherein should
Those another part of a little at least two second electrodes are electrically connected at pair via those third electrodes and those connection electrodes respectively
Those at least two semiconductor layers answered.
13. the manufacturing method of display device as claimed in claim 10, which is characterized in that the wherein at least one drive circuit packet
At least two active components are included, which includes at least scan line and an at least data line, and the respectively active component
Including an at least control terminal, an at least first end and an at least second end,
Wherein an at least control terminal for those at least one of them of two active components is electrically connected at at least scan line,
An at least first end for those at least one of them of two active components is electrically connected at an at least data line,
An at least control terminal for the wherein another one of those at least two active components is electrically connected at those at least two active yuan
An at least second end for the one of them of part,
An at least first end for the wherein another one of those at least two active components be electrically connected at this at least one it is miniature shine
The one of them of those third electrodes of element, those at least one of them of two first electrodes and those at least two second electrodes
One of them,
An at least second end for the wherein another one of those at least two active components is electrically connected at the confession of those at least two power supplys
The one of them of line is answered, and the one of them of those third electrodes of at least one miniature light-emitting component is electrically connected at those extremely
The wherein another one of few two power supply lines.
14. the manufacturing method of display device as claimed in claim 13, which is characterized in that a wherein at least switching circuit packet
An at least switch element is included, which includes an at least control terminal, at least a first end and an at least second end,
Wherein an at least first end for an at least switch element is electrically connected at the wherein another one of those at least two first electrodes,
And an at least second end for an at least switch element is electrically connected at an at least read line.
15. the manufacturing method of display device as claimed in claim 10, which is characterized in that the wherein at least one miniature luminous member
An at least adhesion coating is not present between the bottom surface of part and those at least two first electrodes on this at least a protrusion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107121296 | 2018-06-21 | ||
| TW107121296A TWI684053B (en) | 2018-06-21 | 2018-06-21 | Display device and method of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109192719A true CN109192719A (en) | 2019-01-11 |
| CN109192719B CN109192719B (en) | 2020-06-02 |
Family
ID=64914837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811034385.8A Active CN109192719B (en) | 2018-06-21 | 2018-09-05 | Display device and method for manufacturing the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109192719B (en) |
| TW (1) | TWI684053B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786421A (en) * | 2019-02-28 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of display device, display backboard and production method |
| US20230023295A1 (en) * | 2021-07-26 | 2023-01-26 | Excellence Opto. Inc. | Vertical light emitting diode chip package with electrical detection position |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080164483A1 (en) * | 2005-05-23 | 2008-07-10 | Kazuhide Tomiyasu | Semiconductor Device and Manufacturing Method Thereof, and Liquid Crystal Display Device |
| CN101548382A (en) * | 2006-12-07 | 2009-09-30 | 汤姆森特许公司 | Panel of organic light-emitting diodes, provided with integrated top supply electrodes |
| CN102543896A (en) * | 2011-11-15 | 2012-07-04 | 友达光电股份有限公司 | Display panel |
| US20150011034A1 (en) * | 2012-05-09 | 2015-01-08 | Japan Display Inc. | Display Device |
| CN104851388A (en) * | 2014-02-19 | 2015-08-19 | 三星显示有限公司 | Organic light emitting display apparatus and method of manufacturing the same |
| CN104867405A (en) * | 2014-02-26 | 2015-08-26 | 三星显示有限公司 | Display Devices And Methods Of Manufacturing Display Devices |
| US20150318336A1 (en) * | 2001-03-28 | 2015-11-05 | Japan Display Inc. | Display module |
| CN106409228A (en) * | 2009-02-27 | 2017-02-15 | 株式会社半导体能源研究所 | Method for driving semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102651097B1 (en) * | 2016-10-28 | 2024-03-22 | 엘지디스플레이 주식회사 | Light emitting diode display apparatus |
| KR102633079B1 (en) * | 2016-10-28 | 2024-02-01 | 엘지디스플레이 주식회사 | Light emitting diode display apparatus |
| TWI625871B (en) * | 2017-07-24 | 2018-06-01 | 友達光電股份有限公司 | Micro light-emitting device, method for fabricating the same, and display device and transient carrier device using the same |
-
2018
- 2018-06-21 TW TW107121296A patent/TWI684053B/en active
- 2018-09-05 CN CN201811034385.8A patent/CN109192719B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150318336A1 (en) * | 2001-03-28 | 2015-11-05 | Japan Display Inc. | Display module |
| US20080164483A1 (en) * | 2005-05-23 | 2008-07-10 | Kazuhide Tomiyasu | Semiconductor Device and Manufacturing Method Thereof, and Liquid Crystal Display Device |
| CN101548382A (en) * | 2006-12-07 | 2009-09-30 | 汤姆森特许公司 | Panel of organic light-emitting diodes, provided with integrated top supply electrodes |
| CN106409228A (en) * | 2009-02-27 | 2017-02-15 | 株式会社半导体能源研究所 | Method for driving semiconductor device |
| CN102543896A (en) * | 2011-11-15 | 2012-07-04 | 友达光电股份有限公司 | Display panel |
| US20150011034A1 (en) * | 2012-05-09 | 2015-01-08 | Japan Display Inc. | Display Device |
| CN104851388A (en) * | 2014-02-19 | 2015-08-19 | 三星显示有限公司 | Organic light emitting display apparatus and method of manufacturing the same |
| CN104867405A (en) * | 2014-02-26 | 2015-08-26 | 三星显示有限公司 | Display Devices And Methods Of Manufacturing Display Devices |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786421A (en) * | 2019-02-28 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of display device, display backboard and production method |
| US20230023295A1 (en) * | 2021-07-26 | 2023-01-26 | Excellence Opto. Inc. | Vertical light emitting diode chip package with electrical detection position |
| US11869817B2 (en) * | 2021-07-26 | 2024-01-09 | Excellence Opto. Inc. | Vertical light emitting diode chip package with electrical detection position |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI684053B (en) | 2020-02-01 |
| CN109192719B (en) | 2020-06-02 |
| TW202001387A (en) | 2020-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3557620B1 (en) | Display device and method for fabricating the same | |
| US11527520B2 (en) | Micro light emitting diode display device | |
| CN106058001B (en) | Semiconductor light-emitting apparatus, its transfer head and the method for shifting semiconductor light-emitting apparatus | |
| CN109671740A (en) | Display panel | |
| CN108597377A (en) | Display module and display device | |
| CN109904303A (en) | Luminescent device and the display device for using the luminescent device | |
| TW202404073A (en) | Display device | |
| CN106486493A (en) | Display device | |
| WO2016122125A1 (en) | Display device using semiconductor light emitting devices and method for manufacturing the same | |
| KR102550331B1 (en) | Method of transferring micro led, method of manufacturing micro led display panel using the same and micro led display panel | |
| CN110416231A (en) | Dot structure and its method for repairing and mending | |
| CN110459557A (en) | Chip die and preparation method thereof, Micro-LED display | |
| CN111192881A (en) | Display device and method for manufacturing the same | |
| CN109065587A (en) | Display base plate and its manufacturing method, display device | |
| CN109192719A (en) | Display device and method for manufacturing the same | |
| KR20240040698A (en) | Display device and method of manufacturing the same | |
| KR102604006B1 (en) | Display device using semiconductor light emitting diode and method for manufacturing the same | |
| CN110534056A (en) | Dot structure | |
| KR20220159560A (en) | Display device and manufacturing method of the same | |
| EP4318583A1 (en) | Display device comprising semiconductor light emitting element | |
| US20230005961A1 (en) | Display device and manufacturing method of the same | |
| KR20210080962A (en) | Light emitting diode(LED) display device and method of fabricating the same | |
| CN117790528A (en) | Micro-LED integrated structure of on-chip integrated transistor driving circuit and manufacturing method thereof | |
| KR20240024260A (en) | Monolithically integrated top gate thin film transistor and light emitting diode and manufacturing method | |
| KR20210020111A (en) | Optoelectronic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |