CN109786421A - A kind of display device, display backboard and production method - Google Patents
A kind of display device, display backboard and production method Download PDFInfo
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Abstract
The present invention provides a kind of display device, display backboard and production method, is related to field of display technology, and the production method includes: to provide a underlay substrate；Backboard functional layer, and multiple grooves in backboard functional layer are formed on underlay substrate；Backboard functional layer includes multiple driving thin film transistor (TFT)s, and driving thin film transistor (TFT) includes first electrode and second electrode；LED chip is transferred in groove using flood tide transfer techniques, LED chip is light-emitting surface close to the one side of underlay substrate, is provided with third electrode and the 4th electrode on one side far from underlay substrate；Form the figure of connection electrode layer, connection electrode layer includes the first connection electrode and the second connection electrode, one end of first connection electrode is connect with the first electrode of driving thin film transistor (TFT), the other end and the third electrode of LED chip connect, and one end of the second connection electrode and the 4th electrode of LED chip connect.To which the binding efficiency and binding yield of LED chip can be promoted, and reduces production cost.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of display device, display backboard and production method.
Background technique
With the development of science and technology, the technology of novel light emitting diode (Light Emitting Diode, LED) is also more next
It is more mature.Such as: micro- light emitting diode (Micro-LED) technology is that the size of existing LED is miniature to 100 microns hereinafter, ruler
The 1% of very little about common LED size can be shifted the tri- color Micro-LED of RGB of micron dimension by flood tide transfer techniques
Onto drive substrate, to form various various sizes of Micro-LED displays.In simple terms, Micro-LED is exactly LED
Filming, micromation and array, each Micro-LED pixel can with addressing, be operated alone it is luminous, between adjacent pixel
Distance drops to micron order by grade.Micro-LED has self-luminous high brightness, high contrast, ultrahigh resolution and color full
Many advantages, such as with degree, long-life, fast response time, energy conservation, wide in range adaptation environment.Micro-LED display technology can cover
It is micro- aobvious from augmented reality (Augmented Reality, AR)/virtual reality technology (Virtual Reality, VR) etc.
Show, the medium sizes such as mobile TV are shown to movie theatre large screen display field.
In the prior art, Micro-LED display screen generally uses top emitting mode, often uses inverse bonding connection technology will
On Micro-LED chip bonding (Bonding) to driving backboard, but it is relatively low to bind efficiency, yield.However, being tied up for lower
Determine yield, it is difficult to point-to-point reparation be carried out to high-resolution, large area, that is, the low efficiency of Micro-LED backboard reparation.
Referring specifically to Fig. 1, the display backboard of the prior art, using low-temperature polysilicon silicon technology-driving thin film transistor (TFT)
(Low Temperature Poly-Silicon-Thin Film Transistor, LTPS-TFT) drives Micro-LED.
This mode often uses silver paste or tin cream that Micro-LED is tied to back plate electrode (Pad) (for three layers of ITO-Ag-ITO
Structure) on, but binding open circuit can occur during binding causes Micro-LED pixel that can not light.With the 4K of standard
For ultra high-definition (Ultra-High Definition, UHD) display screen, totally 3840 × 2160=8,294,400 pixels are right
In RGB Micro-LED, needing the Micro-LED chip of 8,294,400 × 3=24,883,200 altogether, (number of chips is ten million
Grade), but repair largely causes the Micro-LED chip of failure to be a problem, the time repaired one by one and expense due to binding
Cost is very high, if can large area carry out high yield Micro-LED binding by be effectively reduced Micro-LED show backboard at
This.
Therefore, binding efficiency, yield how are promoted, is a technical problem to be solved urgently.
Summary of the invention
In view of this, the present invention provides a kind of display device, display backboard and production method, to solve current binding effect
The relatively low technical problem of rate, yield.
In order to solve the above technical problems, in a first aspect, the present invention provides a kind of production method for showing backboard, comprising:
One underlay substrate is provided；
Backboard functional layer, and multiple grooves in the backboard functional layer are formed on the underlay substrate；Institute
Stating backboard functional layer includes multiple driving thin film transistor (TFT)s, and the driving thin film transistor (TFT) includes first electrode and second electrode；
LED chip is transferred in the groove using flood tide transfer techniques, the LED chip is close to the underlay substrate
One side be light-emitting surface, be provided with third electrode and the 4th electrode on one side far from the underlay substrate；
The figure of connection electrode layer is formed, the connection electrode layer includes the first connection electrode and the second connection electrode, institute
The one end for stating the first connection electrode is connect with the first electrode of the driving thin film transistor (TFT), the other end and the LED chip
The connection of third electrode, one end of second connection electrode is connect with the 4th electrode of the LED chip.
Preferably, the backboard functional layer includes at least one layer of insulating layer, and at least one layer insulating layer includes that grid is exhausted
Edge layer；
It is described that backboard functional layer, and multiple grooves in the backboard functional layer are formed on the underlay substrate
Include:
At least one layer of insulating layer is performed etching, the groove is formed.
Preferably, the backboard functional layer further includes the first planarization layer, described to carry out at least one layer of insulating layer
Etching, forms after the groove, further includes:
The first planarization layer is formed, first planarization layer covers the side wall of the groove.
Preferably, after LED chip is transferred in the groove by the use flood tide transfer techniques, further includes:
The second planarization layer is formed, second planarization layer is for fixing the LED chip.
Preferably, after the figure for forming connection electrode layer further include:
Form light-absorption layer.
Second aspect, the present invention also provides a kind of display backboards, comprising:
Underlay substrate；
Backboard functional layer on the underlay substrate, and multiple grooves in the backboard functional layer；Institute
Stating backboard functional layer includes multiple driving thin film transistor (TFT)s, and the driving thin film transistor (TFT) includes first electrode and second electrode；
LED chip in the groove, the LED chip are light-emitting surface close to the one side of the underlay substrate, far
It is provided with third electrode and the 4th electrode on one side from the underlay substrate；
Connection electrode layer, the connection electrode layer include the first connection electrode and the second connection electrode, first connection
One end of electrode is connect with the first electrode of the driving thin film transistor (TFT), and the third electrode of the other end and the LED chip connects
It connects, one end of second connection electrode is connect with the 4th electrode of the LED chip.
Preferably, the backboard functional layer includes at least one layer of insulating layer, and at least one layer insulating layer includes that grid is exhausted
Edge layer, the groove are obtained by least one layer of insulating layer through over etching.
Preferably, the backboard functional layer further includes the first planarization layer, and first planarization layer covers the groove
Side wall.
Preferably, the display backboard further include:
Second planarization layer, second planarization layer is for fixing the LED chip.
Preferably, the display backboard further include: light-absorption layer.
The third aspect, the present invention also provides a kind of display devices, including above-mentioned display backboard.
The advantageous effects of the above technical solutions of the present invention are as follows: being in contrast to the prior art, the present invention binds LED
The process of chip is simple, and binding is high-efficient, and binds yield height, or even can reach 100% binding yield, in addition, production
Producing line can substantially reduce production cost without increasing redundant equipment.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the display backboard of the prior art；
Fig. 2 is the flow diagram of the production method of the display backboard of the embodiment of the present invention one；
Fig. 3 is the structural schematic diagram of the display backboard of the embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill
Personnel's every other embodiment obtained, shall fall within the protection scope of the present invention.
Unless otherwise defined, technical term or scientific term used in the present invention are should be in fields of the present invention
The ordinary meaning that personage with general technical ability is understood." first ", " second " used in the present invention and similar word
It is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." connection " or " connected "
It is not limited to physics or mechanical connection etc. similar word, but may include electrical connection, either directly
Or it is indirect."upper", "lower", "left", "right" etc. are only used for indicating relative positional relationship, when the absolute position for being described object
After setting change, then the relative positional relationship also correspondingly changes.
Referring to Fig. 2, Fig. 2 is the flow diagram of the production method of the display backboard of the embodiment of the present invention one, the production
Method includes:
Step 21: a underlay substrate is provided；
Step 22: backboard functional layer is formed on the underlay substrate, and multiple in the backboard functional layer
Groove；The backboard functional layer includes multiple driving thin film transistor (TFT)s (Thin Film Transistor, TFT), the driving
Thin film transistor (TFT) includes first electrode and second electrode；
Step 23: LED chip being transferred in the groove using flood tide transfer techniques, the LED chip is close to described
The one side of underlay substrate is light-emitting surface, is provided with third electrode and the 4th electrode on one side far from the underlay substrate；
Step 24: forming the figure of connection electrode layer, the connection electrode layer includes the first connection electrode and the second connection
Electrode, one end of first connection electrode are connect with the first electrode of the driving thin film transistor (TFT), the other end and the LED
The third electrode of chip connects, and one end of second connection electrode is connect with the 4th electrode of the LED chip.
Using the production method of the embodiment of the present invention, the process for binding LED chip is simple, and binding is high-efficient, and binds good
Rate is high, or even can reach 100% binding yield, in addition, production producing line can substantially reduce life without increasing redundant equipment
Produce cost.
In above-described embodiment, the LED chip can be Micro-LED chip, or Mini-LED chip.
In some currently preferred embodiments of the present invention, the backboard functional layer includes at least one layer of insulating layer, it is described at least
One layer insulating includes gate insulating layer (gate insulator, GI)；
It is described that backboard functional layer, and multiple grooves in the backboard functional layer are formed on the underlay substrate
Include:
At least one layer of insulating layer is performed etching, the groove is formed.
Optionally, at least one layer of insulating layer further includes at least one of: buffer layer and interlayer dielectric layer (inter-
Layer dielectric, ILD).
Specifically, the driving thin film transistor (TFT) in backboard functional layer can be bottom gate type, at least one layer of insulating layer at this time
It may include gate insulating layer, alternatively, including buffer layer and gate insulating layer (i.e. bottom gate type TFT does not include interlayer dielectric layer).
I.e. in some embodiments, backboard functional layer may include the grid being successively set on underlay substrate, it is gate insulating layer, active
Layer (Active Layer), source electrode and drain electrode.In other embodiments, backboard functional layer may include setting gradually
Buffer layer, grid on underlay substrate, gate insulating layer, active layer, source electrode and drain electrode.
The driving thin film transistor (TFT) is also possible to top gate type, and at least one layer of insulating layer may include gate insulating layer and interlayer
Dielectric layer, alternatively, including buffer layer, gate insulating layer and interlayer dielectric layer (i.e. top gate type TFT includes interlayer dielectric layer).Exist
In some embodiments, backboard functional layer may include the active layer being successively set on underlay substrate, gate insulating layer, grid,
Interlayer dielectric layer, source electrode (Source) and drain electrode (Drain).In other embodiments, backboard functional layer can wrap
Include the buffer layer being successively set on underlay substrate, active layer, gate insulating layer, grid, interlayer dielectric layer, source electrode and electric leakage
Pole.
When TFT is top gate type TFT, display backboard can also include the first light shield layer (Shield Layer), be located at substrate
Between substrate and the active layer for driving thin film transistor (TFT), for avoiding active layer by external light influence.
In order to which preferably LED chip is transferred in groove, in some currently preferred embodiments of the present invention, the backboard function
Ergosphere further includes the first planarization layer (PLN1), described to perform etching at least one layer of insulating layer, formed the groove it
Afterwards, further includes:
The first planarization layer is formed, first planarization layer covers the side wall of the groove.
Specifically, PLN1 can be made of materials such as resins, and graphical, thus, for placing the recessed of LED chip
The side wall of slot is covered by PLN1, relatively flat, conducive to the transfer of LED chip.
Preferably, after LED chip is transferred in the groove by the use flood tide transfer techniques, further includes:
The second planarization layer is formed, second planarization layer is for fixing the LED chip.
Specifically, after LED chip being transferred in groove, the second planarization layer can be made using materials such as resins
(PLN2), and graphical, PLN2 is used to fix LED chip, thus, LED chip can be made to keep stable structure in the subsequent process.
In some currently preferred embodiments of the present invention, after the figure for forming connection electrode layer further include:
Form light-absorption layer.
Specifically, it is formed after the figure of connection electrode layer, it can be using materials such as black resins, in connection electrode layer
Upper formation light-absorption layer, i.e. black matrix (Black Matrix, BM), so as to absorb the light of LED chip back sending.
In the groove formed due to the backboard functional layer that display backboard is arranged in LED chip, thus it is brilliant to be located at driving film
The active layer side of body pipe, in order to avoid LED chip side light leakage impacts active layer, can groove and active layer it
Between form the second light shield layer.
It can be specifically initially formed the second light shield layer, re-form gate insulating layer, can also be initially formed gate insulating layer, then
Gate insulating layer is performed etching, forms opening, then form the second light shield layer in opening.
In the following, being carried out specifically in conjunction with production method of the concrete application scene to the display backboard of the embodiment of the present invention
It is bright.
Referring to Fig. 3, Fig. 3 is the structural schematic diagram using the display backboard of an application scenarios of the invention.The display backboard
30 make to obtain using the production method of the embodiment of the present invention one, specifically include following making step:
Step 3.1: a underlay substrate 301 is provided；
The underlay substrate 301 can be glass substrate.
Step 3.2: the first light shield layer 302 is formed on underlay substrate 301；
First light shield layer 302 can be metal light shield layer, can prevent environment light from generating adverse effect to TFT characteristic.
Step 3.3: forming buffer layer (Buffer Layer) 303；
The thickness of the buffer layer 303 can be 3000 to 4000 Ethylmercurichlorendimides, such as: 3500 Ethylmercurichlorendimides.
Step 3.4: forming active layer 304；
The material of active layer can be a variety of, such as polysilicon (p-Si) can first deposited amorphous when forming polysilicon
Silicon (a-Si) forms polysilicon using quasi-molecule laser annealing, graphical to form active layer 304.
Step 3.5: forming gate insulating layer 305, and graphical；
The thickness of the gate insulating layer 305 can be 1000 to 2000 Ethylmercurichlorendimides, such as: 1200 Ethylmercurichlorendimides.
Step 3.6: forming grid (Gate) 306, and graphical；
Step 3.7: forming interlayer dielectric layer 307；
The thickness of the interlayer dielectric layer 307 can be 4000 to 6000 Ethylmercurichlorendimides, such as: 5000 Ethylmercurichlorendimides.
Step 3.8: forming the first electrode 308 and second electrode 309 of TFT；
Can be and graphical with sedimentary origin drain electrode layer (SD), form first electrode 308 and second electrode 309；It can be
One electrode 308 is source electrode, and second electrode 309 is drain electrode, it is of course also possible to be that first electrode 308 is electric for drain electrode, second
Pole 309 is source electrode.
That is, the TFT 32 of formation is top gate type TFT in this application scene, the backboard functional layer 31 of formation includes:
First light shield layer 302, buffer layer 303, active layer 304, gate insulating layer 305, grid 306, the 307, first electricity of interlayer dielectric layer
Pole 308 and second electrode 309.
Step 3.9: buffer layer 303, gate insulating layer 305 and interlayer dielectric layer 307 being performed etching, formed multiple recessed
Slot；
The multiple grooves formed are for placing LED chip, to form 1 groove as example in Fig. 3.
Step 3.10: forming the first planarization layer 310, the first planarization layer 310 covers the side wall of groove；
Backboard functional layer 31 further include: the first planarization layer 310, since the side wall of groove is covered by the first planarization layer 310
Lid, it is relatively flat, conducive to the transfer of subsequent LED chip.
Step 3.11: LED chip 311 being transferred in groove using flood tide transfer techniques, LED chip 311 is close to substrate
The one side of substrate 301 is light-emitting surface, is provided with third electrode 312 and the 4th electrode 313 on one side far from underlay substrate 301；
Wherein, LED chip 311 can be Micro-LED chip, using flood tide transfer techniques, so that being transferred to groove
Micro-LED chip it is luminous down, third electrode 312 and the 4th electrode 313 are upward.Third electrode 312 can be
The P electrode of Micro-LED chip, the 4th electrode 313 can be the N electrode of Micro-LED chip.
Step 3.12: forming the second planarization layer 314, the second planarization layer 314 is for fixing LED chip 311；
This application scene is suitable for the LED chip without substrate, buffer layer 303, gate insulating layer 305, interlayer dielectric layer 307
With the thickness of the sum of the thickness of the first planarization layer 310 preferably smaller than LED chip 311.Buffer layer 303, gate insulating layer 305,
The sum of thickness of interlayer dielectric layer 307, the first planarization layer 310 and the second planarization layer 314 is about the thickness of LED chip 311,
The sum of the thickness can be 4 to 7 microns, such as 6 microns.For example, in a specific embodiment, the thickness of the first planarization layer 310
Degree be 2 microns, the second planarization layer 314 with a thickness of 2.3 microns.
Step 3.13: forming the figure of connection electrode layer 315, connection electrode layer 315 includes 3151 He of the first connection electrode
Second connection electrode 3152, one end of the first connection electrode 3151 and the first electrode 308 of TFT connect, the other end and LED chip
Third electrode 312 connect, the 4th electrode 313 of one end of the second connection electrode 3152 and LED chip connects.
Specifically, connection electrode layer 315 can be metal material, preferably titanium-aluminium-titanium three-decker.LED chip
Third electrode 312 can be connect by the first connection electrode 3151 with the first electrode 308 of TFT；4th electrode 313 and second connects
Receiving electrode 3152 connects, and the 4th electrode 313 is connect with the common voltage connecting pin on driving chip.
Step 3.13: forming light-absorption layer 316.
Protective layer 316 can be BM protective layer, can absorb the light of 311 back of LED chip sending.
In above-mentioned application scenarios, whole be largely transferred to of the second best in quality LED chip by screening can be shown back
On plate, very high yield then can be realized, together using techniques integral manufacturing electrodes such as semiconductor coated film, photoetching, etchings again
When binding procedure it is simple, high-efficient, even up to 100% binding yield, can substantially reduce Micro-LED display screen at
This, moreover, process integration will be bound into array processes processing procedure, producing line is without increasing redundant equipment.
In some preferred application scenarios of the invention, after step 3.5, further includes:
Gate insulating layer is performed etching, multiple openings are formed；
The second light shield layer is formed in opening.
Specifically, it referring to Fig. 3, being performed etching to gate insulating layer 305, forms opening and (is only open in Fig. 3 with 1
For example), then the second light shield layer 317 is formed in opening, so that it is bad to avoid 311 side light leakage of LED chip from generating TFT characteristic
It influences.
In other preferred application scenarios of the invention, before step 3.5, further includes:
The second light shield layer is formed between active layer and groove.
That is, still using Fig. 3 as example, it can also be first between active layer 304 and the groove for placing LED chip
The second light shield layer 317 is formed, gate insulating layer 305 is re-formed.
Based on same inventive concept, the present invention also provides a kind of display backboards, still using Fig. 3 as example, the display backboard
30 include:
Underlay substrate 301；
Backboard functional layer 31 on the underlay substrate 301, and it is multiple in the backboard functional layer 31
Groove；The backboard functional layer 31 includes multiple driving thin film transistor (TFT)s 32, and the driving thin film transistor (TFT) 32 includes the first electricity
Pole 308 and second electrode 309；
LED chip 311 in the groove, the LED chip 311 are close to the one side of the underlay substrate 301
Light-emitting surface is provided with third electrode 312 and the 4th electrode 313 far from the underlay substrate 301 on one side；
Connection electrode layer 315, the connection electrode layer 315 include the first connection electrode 3151 and the second connection electrode
3152, one end of first connection electrode 3151 with it is described driving thin film transistor (TFT) first electrode 308 connect, the other end and
The third electrode 312 of the LED chip connects, one end of second connection electrode 3152 and the 4th electricity of the LED chip
Pole 313 connects.
Display backboard provided in an embodiment of the present invention, by carrying out whole binding to LED chip, binding procedure is simple, ties up
It is fixed high-efficient, and yield height is bound, or even 100% binding yield can be reached, in addition, production producing line is without increasing extra set
It is standby, production cost can be substantially reduced.
Optionally, the backboard functional layer 31 includes at least one layer of insulating layer, and at least one layer insulating layer includes grid
Insulating layer 305, the groove are obtained by least one layer of insulating layer through over etching.
Optionally, at least one layer of insulating layer further includes at least one of: buffer layer and interlayer dielectric layer.
Still using Fig. 3 as example, TFT 32 is top gate type TFT, comprising: the first light shield layer 302, buffer layer 303, active layer
304, gate insulating layer 305, grid 306, interlayer dielectric layer 307, first electrode 308 and second electrode 309.
Optionally, the backboard functional layer 31 further includes the first planarization layer 310, and first planarization layer 310 covers
The side wall of the groove.
Optionally, the display backboard 30 further include:
Second planarization layer 314, second planarization layer 314 is for fixing the LED chip 311.
Optionally, the display backboard 30 further include: light-absorption layer 316.
Optionally, the display backboard 30 further include:
Second light shield layer 317, second light shield layer 317 is between active layer and groove.
Specifically, gate insulating layer 305 can be performed etching, forms opening and (is only open in Fig. 3 with 1 to show
Example), then the second light shield layer 317 is formed in opening, so that 311 side light leakage of LED chip be avoided to generate bad shadow to TFT characteristic
It rings.It is of course also possible to be initially formed the second light shield layer 317, gate insulating layer 305 is re-formed, the present invention is not construed as limiting.
Specific work process is consistent in above-mentioned corresponding embodiment one, therefore details are not described herein, please refers in detail above
The explanation of method and step in corresponding embodiment.
Based on same inventive concept, the present invention also provides a kind of display device, the display including the embodiment of the present invention two
Backboard.
Display device provided in an embodiment of the present invention can reach technical effect identical with the embodiment of the present invention two, be
It avoids repeating, which is not described herein again.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (11)
1. a kind of production method for showing backboard characterized by comprising
One underlay substrate is provided；
Backboard functional layer, and multiple grooves in the backboard functional layer are formed on the underlay substrate；The back
Plate functional layer includes multiple driving thin film transistor (TFT)s, and the driving thin film transistor (TFT) includes first electrode and second electrode；
LED chip is transferred in the groove using flood tide transfer techniques, the LED chip close to the underlay substrate one
Face is light-emitting surface, is provided with third electrode and the 4th electrode on one side far from the underlay substrate；
Forming the figure of connection electrode layer, the connection electrode layer includes the first connection electrode and the second connection electrode, and described the
One end of one connection electrode is connect with the first electrode of the driving thin film transistor (TFT), the third of the other end and the LED chip
Electrode connection, one end of second connection electrode is connect with the 4th electrode of the LED chip.
2. production method as described in claim 1, which is characterized in that
The backboard functional layer includes at least one layer of insulating layer, and at least one layer insulating layer includes gate insulating layer；
It is described that backboard functional layer, and multiple groove packets in the backboard functional layer are formed on the underlay substrate
It includes:
At least one layer of insulating layer is performed etching, the groove is formed.
3. production method as claimed in claim 2, which is characterized in that the backboard functional layer further includes the first planarization layer,
It is described that at least one layer of insulating layer is performed etching, it is formed after the groove, further includes:
The first planarization layer is formed, first planarization layer covers the side wall of the groove.
4. production method as claimed in claim 3, which is characterized in that described to be shifted LED chip using flood tide transfer techniques
After in the groove, further includes:
The second planarization layer is formed, second planarization layer is for fixing the LED chip.
5. production method as described in claim 1, which is characterized in that also wrapped after the figure for forming connection electrode layer
It includes:
Form light-absorption layer.
6. a kind of display backboard characterized by comprising
Underlay substrate；
Backboard functional layer on the underlay substrate, and multiple grooves in the backboard functional layer；The back
Plate functional layer includes multiple driving thin film transistor (TFT)s, and the driving thin film transistor (TFT) includes first electrode and second electrode；
LED chip in the groove, the LED chip is light-emitting surface close to the one side of the underlay substrate, far from institute
That states underlay substrate is provided with third electrode and the 4th electrode on one side；
Connection electrode layer, the connection electrode layer include the first connection electrode and the second connection electrode, first connection electrode
One end with it is described driving thin film transistor (TFT) first electrode connect, the other end is connect with the third electrode of the LED chip, institute
The one end for stating the second connection electrode is connect with the 4th electrode of the LED chip.
7. display backboard as claimed in claim 6, which is characterized in that the backboard functional layer includes at least one layer of insulating layer,
At least one layer insulating layer includes gate insulating layer, and the groove is obtained by least one layer of insulating layer through over etching.
8. display backboard as claimed in claim 7, which is characterized in that the backboard functional layer further includes the first planarization layer,
First planarization layer covers the side wall of the groove.
9. display backboard as claimed in claim 8, which is characterized in that further include:
Second planarization layer, second planarization layer is for fixing the LED chip.
10. display backboard as claimed in claim 6, which is characterized in that further include: light-absorption layer.
11. a kind of display device, which is characterized in that including the described in any item display backboards of such as claim 6 to 10.
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| CN110400809A (en) * | 2019-07-24 | 2019-11-01 | 深圳市华星光电半导体显示技术有限公司 | TFT drives backboard and Micro-LED display |
| CN110444561A (en) * | 2019-08-16 | 2019-11-12 | 云谷（固安）科技有限公司 | A kind of display base plate and display panel |
| CN110703501A (en) * | 2019-10-29 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Light-emitting substrate, backlight module and display panel |
| CN110853531A (en) * | 2019-11-21 | 2020-02-28 | 京东方科技集团股份有限公司 | Driving backboard for display, preparation method thereof and display panel |
| CN111048502A (en) * | 2019-12-27 | 2020-04-21 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
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