CN109786421B - Display device, display back plate and manufacturing method - Google Patents
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Abstract
The invention provides a display device, a display back plate and a manufacturing method, and relates to the technical field of display, wherein the manufacturing method comprises the following steps: providing a substrate base plate; forming a backboard functional layer on a substrate and a plurality of grooves on the backboard functional layer; the backboard functional layer comprises a plurality of driving thin film transistors, and each driving thin film transistor comprises a first electrode and a second electrode; transferring the LED chip into the groove by adopting a mass transfer technology, wherein one surface of the LED chip, which is close to the substrate base plate, is a light-emitting surface, and the surface, which is far away from the substrate base plate, is provided with a third electrode and a fourth electrode; and forming a pattern of a connection electrode layer, wherein the connection electrode layer comprises a first connection electrode and a second connection electrode, one end of the first connection electrode is connected with the first electrode of the driving thin film transistor, the other end of the first connection electrode is connected with the third electrode of the LED chip, and one end of the second connection electrode is connected with the fourth electrode of the LED chip. Therefore, the binding efficiency and the binding yield of the LED chip can be improved, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display device, a display back plate and a manufacturing method.
Background
With the development of technology, the technology of new Light Emitting Diodes (LEDs) is becoming more mature. For example: the Micro light emitting diode (Micro-LED) technology is characterized in that the size of the existing LED is reduced to be less than 100 micrometers, the size of the existing LED is about 1% of the size of the ordinary LED, and the micron RGB three-color Micro-LED can be transferred onto a driving substrate through a huge transfer technology, so that Micro-LED displays with various sizes are formed. In short, the Micro-LED is the thinning, miniaturization and array of the LED, each Micro-LED pixel can address and independently drive to emit light, and the distance between adjacent pixels is reduced from millimeter level to micron level. The Micro-LED has the advantages of self-luminescence, high brightness, high contrast, ultrahigh resolution and color saturation, long service life, high response speed, energy conservation, wide applicable environment and the like. The Micro-LED display technology can cover the field from Micro-display such as Augmented Reality (AR) and Virtual Reality (VR), and medium-sized display such as mobile phone and television to large-screen display in cinema.
In the prior art, a Micro-LED display screen generally adopts a top emission mode, often adopts an inverted welding technology to bind (Bonding) a Micro-LED chip to a driving backplane, but the binding efficiency and yield are low. However, for a low binding yield, it is difficult to perform point-to-point repair on a high resolution and large area, i.e., the Micro-LED backplane repair is inefficient.
Referring to fig. 1, in the display backplane of the prior art, a Low Temperature polysilicon technology (Low Temperature polysilicon-Thin Film Transistor, LTPS-TFT) is used to drive the Micro-LED. In the mode, silver paste or tin paste is often adopted to bind the Micro-LED to a back panel electrode (Pad) (which is a three-layer structure of ITO-Ag-ITO), but in the binding process, binding disconnection occurs, so that the Micro-LED pixel cannot be lightened. Taking a standard 4K Ultra-High Definition (UHD) display screen as an example, 3840 × 2160 pixels in total are 8,294,400 pixels, and for RGB Micro-LEDs, 8,294,400 × 3 pixels in total are 24,883,200 Micro-LED chips (the number of chips is ten million), but repairing a large number of failed Micro-LED chips caused by binding is a difficult problem, and the time and cost for repairing one by one are very High, and if the Micro-LED binding with High yield can be performed in a large area, the cost of the Micro-LED display backplane is effectively reduced.
Therefore, how to improve the binding efficiency and yield is a technical problem to be solved urgently at present.
Disclosure of Invention
In view of the above, the present invention provides a display device, a display backplane and a manufacturing method thereof, so as to solve the technical problem of low binding efficiency and yield at present.
In order to solve the above technical problem, in a first aspect, the present invention provides a method for manufacturing a display backplane, including:
providing a substrate base plate;
forming a backplane functional layer on the substrate and a plurality of grooves on the backplane functional layer; the backplane functional layer comprises a plurality of driving thin film transistors, and the driving thin film transistors comprise a first electrode and a second electrode;
transferring an LED chip into the groove by adopting a massive transfer technology, wherein one surface, close to the substrate base plate, of the LED chip is a light-emitting surface, and a third electrode and a fourth electrode are arranged on one surface, far away from the substrate base plate, of the LED chip;
and forming a pattern of a connecting electrode layer, wherein the connecting electrode layer comprises a first connecting electrode and a second connecting electrode, one end of the first connecting electrode is connected with the first electrode of the driving thin film transistor, the other end of the first connecting electrode is connected with the third electrode of the LED chip, and one end of the second connecting electrode is connected with the fourth electrode of the LED chip.
Preferably, the backplane functional layer comprises at least one insulating layer comprising a gate insulating layer;
the forming a backplane functional layer on the substrate base plate, and the plurality of grooves on the backplane functional layer comprise:
and etching the at least one insulating layer to form the groove.
Preferably, the backplane functional layer further includes a first planarizing layer, and after the etching the at least one insulating layer to form the groove, the method further includes:
forming a first planarizing layer covering sidewalls of the groove.
Preferably, after the LED chip is transferred into the groove by using the bulk transfer technique, the method further includes:
forming a second planarizing layer for fixing the LED chip.
Preferably, the forming of the pattern of the connection electrode layer further includes:
and forming a light absorbing layer.
In a second aspect, the present invention also provides a display backplane, comprising:
a substrate base plate;
a backplane functional layer on the substrate, and a plurality of grooves on the backplane functional layer; the backplane functional layer comprises a plurality of driving thin film transistors, and the driving thin film transistors comprise a first electrode and a second electrode;
the LED chip is positioned in the groove, one surface, close to the substrate base plate, of the LED chip is a light-emitting surface, and a third electrode and a fourth electrode are arranged on one surface, far away from the substrate base plate, of the LED chip;
and the connecting electrode layer comprises a first connecting electrode and a second connecting electrode, one end of the first connecting electrode is connected with the first electrode of the driving thin film transistor, the other end of the first connecting electrode is connected with the third electrode of the LED chip, and one end of the second connecting electrode is connected with the fourth electrode of the LED chip.
Preferably, the backplane functional layer includes at least one insulating layer, the at least one insulating layer includes a gate insulating layer, and the groove is formed by etching the at least one insulating layer.
Preferably, the functional layer of the back plate further comprises a first planarization layer, and the first planarization layer covers the side wall of the groove.
Preferably, the display backplane further comprises:
a second planarizing layer for fixing the LED chip.
Preferably, the display backplane further comprises: a light absorbing layer.
In a third aspect, the present invention further provides a display device, including the display back plate.
The technical scheme of the invention has the following beneficial effects: compared with the prior art, the method has the advantages that the process of binding the LED chip is simple, the binding efficiency is high, the binding yield is high, even the binding yield can reach 100%, in addition, a production line does not need to be additionally provided with redundant equipment, and the production cost can be greatly reduced.
Drawings
FIG. 1 is a schematic diagram of a display backplane of the prior art;
fig. 2 is a schematic flow chart illustrating a manufacturing method of a display backplane according to a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of a display backplane according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.
Referring to fig. 2, fig. 2 is a schematic flow chart illustrating a manufacturing method of a display backplane according to an embodiment of the present invention, the manufacturing method includes:
step 21: providing a substrate base plate;
step 22: forming a backplane functional layer on the substrate and a plurality of grooves on the backplane functional layer; the backplane functional layer includes a plurality of driving Thin Film Transistors (TFTs) including a first electrode and a second electrode;
step 23: transferring an LED chip into the groove by adopting a massive transfer technology, wherein one surface, close to the substrate base plate, of the LED chip is a light-emitting surface, and a third electrode and a fourth electrode are arranged on one surface, far away from the substrate base plate, of the LED chip;
step 24: and forming a pattern of a connecting electrode layer, wherein the connecting electrode layer comprises a first connecting electrode and a second connecting electrode, one end of the first connecting electrode is connected with the first electrode of the driving thin film transistor, the other end of the first connecting electrode is connected with the third electrode of the LED chip, and one end of the second connecting electrode is connected with the fourth electrode of the LED chip.
By adopting the manufacturing method of the embodiment of the invention, the process of binding the LED chip is simple, the binding efficiency is high, the binding yield is high, and can even reach 100%, in addition, the production line does not need to increase redundant equipment, and the production cost can be greatly reduced.
In the above embodiment, the LED chip may be a Micro-LED chip or a Mini-LED chip.
In some preferred embodiments of the present invention, the backplane functional layer comprises at least one insulating layer comprising a Gate Insulator (GI);
the forming a backplane functional layer on the substrate base plate, and the plurality of grooves on the backplane functional layer comprise:
and etching the at least one insulating layer to form the groove.
Optionally, the at least one insulating layer further includes at least one of: buffer layers and interlayer dielectric (ILD).
Specifically, the driving thin film transistor on the backplane functional layer may be a bottom gate type, in which case at least one of the insulating layers may include a gate insulating layer, or a buffer layer and a gate insulating layer (i.e., the bottom gate type TFT does not include an interlayer dielectric layer). That is, in some embodiments, the backplane functional Layer may include a gate electrode, a gate insulating Layer, an Active Layer (Active Layer), a source electrode, and a drain electrode, which are sequentially disposed on the substrate base. In still other embodiments, the backplane functional layer may include a buffer layer, a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode sequentially disposed on the substrate.
The driving thin film transistor may also be of a top gate type, and the at least one insulating layer may include a gate insulating layer and an interlayer dielectric layer, or alternatively, a buffer layer, a gate insulating layer, and an interlayer dielectric layer (i.e., a top gate type TFT includes an interlayer dielectric layer). That is, in some embodiments, the backplane functional layer may include an active layer, a gate insulating layer, a gate electrode, an interlayer dielectric layer, a Source electrode (Source), and a Drain electrode (Drain) sequentially disposed on the substrate. In still other embodiments, the backplane functional layer may include a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode sequentially disposed on the substrate.
When the TFT is a top gate TFT, the display backplane may further include a first light shielding Layer (Shield Layer) between the substrate and the active Layer of the driving thin film transistor, for preventing the active Layer from being affected by external light.
In order to better transfer the LED chip into the recess, in some preferred embodiments of the present invention, the backplane functional layer further comprises a first planarizing layer (PLN1), the etching the at least one insulating layer, and after forming the recess, further comprising:
forming a first planarizing layer covering sidewalls of the groove.
Specifically, PLN1 may be made of a material such as resin and patterned, so that the side wall of the groove for placing the LED chip is covered by PLN1, which is flat and facilitates the transfer of the LED chip.
Preferably, after the LED chip is transferred into the groove by using the bulk transfer technique, the method further includes:
forming a second planarizing layer for fixing the LED chip.
Specifically, after the LED chip is transferred into the groove, the second planarization layer (PLN2) may be made of a material such as resin and patterned, and the PLN2 is used to fix the LED chip, so that the LED chip can maintain a stable structure in a subsequent process.
In some preferred embodiments of the present invention, the forming of the pattern of the connection electrode layer further includes:
and forming a light absorbing layer.
Specifically, after the connection electrode layer is patterned, a light absorbing layer, i.e., a Black Matrix (BM), may be formed on the connection electrode layer using a material such as Black resin, so that light emitted from the back of the LED chip can be absorbed.
Because the LED chip is arranged in the groove formed by the backboard function layer of the display backboard, the LED chip is positioned on one side of the active layer of the driving thin film transistor, and in order to avoid the influence of light leakage on the active layer from the side surface of the LED chip, a second light shielding layer can be formed between the groove and the active layer.
Specifically, the second light shielding layer may be formed first, and then the gate insulating layer may be formed, or the gate insulating layer may be formed first, and then the gate insulating layer is etched to form the opening, and then the second light shielding layer is formed in the opening.
The following describes a method for manufacturing a display backplane according to an embodiment of the present invention in detail with reference to a specific application scenario.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a display backplane adopting an application scenario of the present invention. The display back plate 30 is manufactured by the manufacturing method of the first embodiment of the invention, and specifically comprises the following manufacturing steps:
step 3.1: providing a substrate base plate 301;
the substrate base plate 301 may be a glass substrate.
Step 3.2: forming a first light-shielding layer 302 on the base substrate 301;
the first light-shielding layer 302 may be a metal light-shielding layer, which can prevent the TFT characteristics from being adversely affected by ambient light.
Step 3.3: forming a Buffer Layer (Buffer Layer) 303;
the buffer layer 303 may have a thickness of 3000 to 4000 angstroms, for example: 3500 angstroms of rice.
Step 3.4: forming an active layer 304;
the active layer may be made of various materials, such as polysilicon (p-Si), and when the polysilicon is formed, amorphous silicon (a-Si) may be deposited, and excimer laser annealing may be used to form the polysilicon, and the active layer 304 may be patterned.
Step 3.5: forming a gate insulating layer 305 and patterning;
the thickness of the gate insulation layer 305 may be 1000 to 2000 angstroms, for example: 1200 angstroms of rice.
Step 3.6: forming a Gate (Gate)306 and patterning;
step 3.7: forming an interlayer dielectric layer 307;
the thickness of the interlayer dielectric layer 307 may be 4000 to 6000 angstroms, for example: 5000 angstrom.
Step 3.8: forming a first electrode 308 and a second electrode 309 of the TFT;
a source drain electrode layer (SD) may be deposited and patterned to form a first electrode 308 and a second electrode 309; the first electrode 308 may be a source electrode and the second electrode 309 may be a drain electrode, but the first electrode 308 may be a drain electrode and the second electrode 309 may be a source electrode.
That is, in this application scenario, the TFT 32 is formed as a top gate TFT, and the backplane functional layer 31 is formed to include: a first light-shielding layer 302, a buffer layer 303, an active layer 304, a gate insulating layer 305, a gate electrode 306, an interlayer dielectric layer 307, a first electrode 308, and a second electrode 309.
Step 3.9: etching the buffer layer 303, the gate insulating layer 305 and the interlayer dielectric layer 307 to form a plurality of grooves;
the plurality of grooves formed are used for placing the LED chips, and fig. 3 exemplifies the formation of 1 groove.
Step 3.10: forming a first planarization layer 310, the first planarization layer 310 covering sidewalls of the groove;
the backsheet functional layer 31 further comprises: the first planarizing layer 310 is relatively flat because the side wall of the groove is covered by the first planarizing layer 310, which is beneficial to the transfer of the subsequent LED chip.
Step 3.11: transferring the LED chip 311 into the groove by adopting a bulk transfer technology, wherein one surface of the LED chip 311 close to the substrate base plate 301 is a light-emitting surface, and one surface far away from the substrate base plate 301 is provided with a third electrode 312 and a fourth electrode 313;
the LED chip 311 may be a Micro-LED chip, and a massive transfer technology is adopted, so that the light emitting surface of the Micro-LED chip transferred to the groove faces downward, and the third electrode 312 and the fourth electrode 313 face upward. The third electrode 312 may be a P electrode of the Micro-LED chip, and the fourth electrode 313 may be an N electrode of the Micro-LED chip.
Step 3.12: forming a second planarizing layer 314, the second planarizing layer 314 fixing the LED chip 311;
the application scenario is applicable to a substrate-less LED chip, and the sum of the thicknesses of the buffer layer 303, the gate insulating layer 305, the interlayer dielectric layer 307, and the first planarizing layer 310 is preferably smaller than the thickness of the LED chip 311. The sum of the thicknesses of the buffer layer 303, the gate insulating layer 305, the interlayer dielectric layer 307, the first planarizing layer 310, and the second planarizing layer 314 is about the thickness of the LED chip 311, and the sum of the thicknesses may be 4 to 7 micrometers, such as 6 micrometers. For example, in one embodiment, the first planarizing layer 310 has a thickness of 2 microns and the second planarizing layer 314 has a thickness of 2.3 microns.
Step 3.13: a connection electrode layer 315 is patterned, the connection electrode layer 315 including a first connection electrode 3151 and a second connection electrode 3152, one end of the first connection electrode 3151 being connected to the first electrode 308 of the TFT, the other end being connected to the third electrode 312 of the LED chip, and one end of the second connection electrode 3152 being connected to the fourth electrode 313 of the LED chip.
Specifically, the connection electrode layer 315 may be made of a metal material, and preferably has a titanium-aluminum-titanium three-layer structure. The third electrode 312 of the LED chip may be connected with the first electrode 308 of the TFT through the first connection electrode 3151; the fourth electrode 313 is connected to the second connection electrode 3152, and the fourth electrode 313 is connected to a common voltage connection terminal on the driving chip.
Step 3.13: a light absorbing layer 316 is formed.
The passivation layer 316 may be a BM passivation layer that absorbs light emitted from the back of the LED chip 311.
In the application scene, the screened LED chips with good quality can be integrally transferred to the display back plate in a large quantity, then the electrodes are integrally manufactured by adopting the processes of semiconductor coating, photoetching, etching and the like, the very high yield can be realized, meanwhile, the binding process is simple, the efficiency is high, the binding yield is even up to 100%, the cost of the Micro-LED display screen can be greatly reduced, in addition, the binding process is integrated into the array process, and the production line does not need to increase redundant equipment.
In some preferred application scenarios of the present invention, after step 3.5, the method further includes:
etching the gate insulating layer to form a plurality of openings;
and forming a second light shielding layer in the opening.
Specifically, referring to fig. 3, the gate insulating layer 305 is etched to form openings (only 1 opening is taken as an example in fig. 3), and then the second light shielding layer 317 is formed in the openings, so as to prevent the side light leakage of the LED chip 311 from adversely affecting the TFT characteristics.
In other preferred application scenarios of the present invention, before step 3.5, the method further includes:
a second light-shielding layer is formed between the active layer and the groove.
That is, still taking fig. 3 as an example, the second light-shielding layer 317 may be formed between the active layer 304 and the groove for placing the LED chip, and then the gate insulating layer 305 may be formed.
Based on the same inventive concept, the present invention further provides a display backplane, still taking fig. 3 as an example, where the display backplane 30 includes:
a base substrate 301;
a backplane functional layer 31 on the substrate base plate 301, and a plurality of grooves on the backplane functional layer 31; the backplane functional layer 31 comprises a plurality of driving thin film transistors 32, and the driving thin film transistors 32 comprise a first electrode 308 and a second electrode 309;
the LED chip 311 is positioned in the groove, one surface, close to the substrate base plate 301, of the LED chip 311 is a light-emitting surface, and a third electrode 312 and a fourth electrode 313 are arranged on one surface, far away from the substrate base plate 301, of the LED chip 311;
the connecting electrode layer 315, the connecting electrode layer 315 includes a first connecting electrode 3151 and a second connecting electrode 3152, one end of the first connecting electrode 3151 is connected to the first electrode 308 of the driving thin film transistor, the other end of the first connecting electrode 3151 is connected to the third electrode 312 of the LED chip, and one end of the second connecting electrode 3152 is connected to the fourth electrode 313 of the LED chip.
According to the display back plate provided by the embodiment of the invention, the LED chips are integrally bound, so that the binding process is simple, the binding efficiency is high, the binding yield is high, even can reach 100%, in addition, a production line does not need to be additionally provided with redundant equipment, and the production cost can be greatly reduced.
Optionally, the backplane functional layer 31 includes at least one insulating layer, the at least one insulating layer includes a gate insulating layer 305, and the groove is formed by etching the at least one insulating layer.
Optionally, the at least one insulating layer further includes at least one of: buffer layers and interlayer dielectric layers.
Still taking fig. 3 as an example, the TFT 32 is a top gate type TFT including: a first light-shielding layer 302, a buffer layer 303, an active layer 304, a gate insulating layer 305, a gate electrode 306, an interlayer dielectric layer 307, a first electrode 308, and a second electrode 309.
Optionally, the functional backplane layer 31 further includes a first planarization layer 310, and the first planarization layer 310 covers the sidewalls of the groove.
Optionally, the display back panel 30 further includes:
a second planarizing layer 314, wherein the second planarizing layer 314 fixes the LED chip 311.
Optionally, the display back panel 30 further includes: a light absorbing layer 316.
Optionally, the display back panel 30 further includes:
and a second light shielding layer 317, wherein the second light shielding layer 317 is positioned between the active layer and the groove.
Specifically, the gate insulating layer 305 may be etched to form openings (only 1 opening is shown in fig. 3 as an example), and then the second light-shielding layer 317 may be formed in the openings, so as to prevent the side light leakage of the LED chip 311 from adversely affecting the TFT characteristics. Of course, the second light-shielding layer 317 may be formed first, and then the gate insulating layer 305 may be formed, which is not limited in the present invention.
The specific working process is the same as that in the first corresponding embodiment, and therefore, detailed description is not repeated here, and please refer to the description of the method steps in the corresponding embodiment.
Based on the same inventive concept, the invention further provides a display device comprising the display back plate of the second embodiment of the invention.
The display device provided by the embodiment of the invention can achieve the same technical effects as the second embodiment of the invention, and is not repeated here to avoid repetition.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (7)
1. A manufacturing method of a display back plate is characterized by comprising the following steps:
providing a substrate base plate;
forming a backplane functional layer on the substrate and a plurality of grooves on the backplane functional layer; the backplane functional layer comprises a plurality of driving thin film transistors, and the driving thin film transistors comprise a first electrode and a second electrode;
transferring an LED chip into the groove by adopting a massive transfer technology, wherein one surface, close to the substrate base plate, of the LED chip is a light-emitting surface, and a third electrode and a fourth electrode are arranged on one surface, far away from the substrate base plate, of the LED chip;
forming a pattern of a connection electrode layer, wherein the connection electrode layer comprises a first connection electrode and a second connection electrode, one end of the first connection electrode is connected with the first electrode of the driving thin film transistor, the other end of the first connection electrode is connected with the third electrode of the LED chip, and one end of the second connection electrode is connected with the fourth electrode of the LED chip;
the backplane functional layer comprises at least one insulating layer comprising a gate insulating layer;
the forming a backplane functional layer on the substrate base plate, and the plurality of grooves on the backplane functional layer comprise:
etching the at least one insulating layer to form the groove;
the backplane functional layer further includes a first planarizing layer, and after the etching of the at least one insulating layer to form the groove and before the transferring of the LED chip into the groove by using a bulk transfer technique, the method further includes:
forming a first planarizing layer covering sidewalls of the groove.
2. The method of claim 1, wherein after transferring the LED chip into the recess using a bulk transfer technique, further comprising:
forming a second planarizing layer for fixing the LED chip.
3. The method of claim 1, wherein the forming the pattern of the connection electrode layer further comprises:
and forming a light absorbing layer.
4. A display backplane, comprising:
a substrate base plate;
a backplane functional layer on the substrate, and a plurality of grooves on the backplane functional layer; the backplane functional layer comprises a plurality of driving thin film transistors, and the driving thin film transistors comprise a first electrode and a second electrode;
the LED chip is positioned in the groove, one surface, close to the substrate base plate, of the LED chip is a light-emitting surface, and a third electrode and a fourth electrode are arranged on one surface, far away from the substrate base plate, of the LED chip;
the connecting electrode layer comprises a first connecting electrode and a second connecting electrode, one end of the first connecting electrode is connected with the first electrode of the driving thin film transistor, the other end of the first connecting electrode is connected with the third electrode of the LED chip, and one end of the second connecting electrode is connected with the fourth electrode of the LED chip;
the backboard functional layer comprises at least one insulating layer, the at least one insulating layer comprises a grid insulating layer, and the groove is formed by etching the at least one insulating layer;
the backplane functional layer further comprises a first planarizing layer for covering sidewalls of the recess prior to transferring the LED chip into the recess using bulk transfer techniques.
5. The display backplane of claim 4, further comprising:
a second planarizing layer for fixing the LED chip.
6. The display backplane of claim 4, further comprising: a light absorbing layer.
7. A display device comprising the display backplane according to any one of claims 4 to 6.
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| CN110299377B (en) * | 2019-07-03 | 2022-12-16 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method and display device |
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