CN109300932B - LED display and manufacturing method thereof - Google Patents
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- CN109300932B CN109300932B CN201811340457.1A CN201811340457A CN109300932B CN 109300932 B CN109300932 B CN 109300932B CN 201811340457 A CN201811340457 A CN 201811340457A CN 109300932 B CN109300932 B CN 109300932B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Abstract
The invention relates to the technical field of displays and provides an LED display and a manufacturing method thereof. The LED display is favorable for reducing the difficulty of realizing electric interconnection between the LED chip and the corresponding driving unit, improving the display resolution, and the integrated metal layer can lead out the heat emitted by the LED chip during working, and can effectively isolate the light emitted by the LED chip positioned in the adjacent micropore, thereby being favorable for improving the performance of the LED display. The manufacturing method of the LED display is compatible with a general semiconductor process.
Description
Technical Field
The invention relates to the technical field of displays, in particular to an LED display and a manufacturing method thereof.
Background
The LED (Light Emitting Diode ) display technology is a display technology in which a conventional LED light source is miniaturized and matrixed and a semiconductor driving circuit is employed to realize the address control and individual driving for each pixel point. The LED display technology can be used for large-size computer, television and advertisement displays, and can also be used for micro-displays, and the LED display is self-luminous display, and has good comprehensive performance in brightness, service life, contrast, reaction time, energy consumption, visual angle and resolution, so that the LED display technology has wide application prospect.
LED displays typically include an array of LED chips (as pixels) and a driving array for controlling the LED chips and peripheral circuitry, wherein the LED chips are attached to a substrate on which the driving array is formed and electrically interconnected with corresponding driving elements by wire bonding or the like, and the present LED display technology still needs to be improved in several ways: 1. how to improve the electrical interconnection between the LED chip and the corresponding driving element to improve resolution; 2. the temperature rise may cause the light efficiency of the LED chip to be reduced, the center wavelength to drift or even fail, so that an effective heat dissipation mode is required to be provided; 3. since light emitted from the LED chips can be emitted through each surface thereof, the LED chips need to be effectively isolated in order to reduce interference between adjacent pixels.
Disclosure of Invention
The invention aims to provide an LED display and a manufacturing method thereof, wherein the LED display can be used for high-resolution display, LED chips serving as pixel points are mutually isolated to reduce interference, and the LED display has a good heat dissipation effect.
In one aspect of the present invention, there is provided an LED display including:
a substrate; the metal layer is arranged on the substrate, a plurality of micropores are formed in the metal layer, and each micropore is embedded with an LED chip; and the driving layer is arranged on the metal layer and comprises driving units corresponding to the micropores one by one, and each driving unit is electrically connected with the LED chip in the corresponding micropore.
Optionally, a peripheral circuit is further disposed on the substrate, and the peripheral circuit is electrically connected to the plurality of driving units; the metal layer is connected with a common electrode line in the peripheral circuit.
Optionally, the LED chip includes a first electrode and a second electrode, where the first electrode is electrically connected to the corresponding driving unit, and the second electrode is electrically connected to the metal layer.
Optionally, the LED chip is an electrode coplanar chip, the first electrode and the second electrode are both located at one side of the upper surface of the LED chip away from the substrate, and the corresponding micropores penetrate through the metal layer; or the LED chip is an electrode different-surface chip, the first electrode is positioned on one side of the LED chip far away from the upper surface of the substrate, the second electrode is positioned on one side of the LED chip near the upper surface of the substrate, and the depth of the corresponding micropore is smaller than the thickness of the metal layer.
Alternatively, the thickness of the metal layer is 10 μm to 1000 μm in a direction perpendicular to the surface of the substrate.
Optionally, the material of the metal layer includes at least one metal of stainless steel, copper, nickel, chromium, zinc, and aluminum, or the metal layer includes an alloy of at least one element of iron, copper, nickel, chromium, zinc, and aluminum.
Optionally, the LED display further includes an adhesive layer disposed between the upper surface of the substrate and the metal layer to bond the substrate and the metal layer.
Optionally, the material of the adhesive layer includes at least one of polyimide, polyester, polymethyl methacrylate, or at least one of iron, nickel, chromium, copper, tin, silver, zinc, copper, and aluminum.
In another aspect of the present invention, a method for manufacturing an LED display is provided, including the steps of:
providing a substrate, wherein the upper surface of the substrate is preset with a plurality of pixel display areas and a non-display area for limiting the pixel display areas; sequentially forming a metal layer and a driving layer on the substrate, wherein the metal layer covers the upper surface of the substrate, the driving layer covers the upper surface of the metal layer, and the driving layer comprises a plurality of driving units formed corresponding to the non-display area; sequentially etching the driving layer and the metal layer to form openings penetrating the driving layer and corresponding to the pixel display areas and a plurality of micropores in the metal layer; embedding a plurality of LED chips in the micropores in a one-to-one correspondence manner, wherein the LED chips comprise a first electrode and a second electrode, and the first electrode is positioned on the surface of one side of the LED chips far away from the surface of the substrate; and sequentially forming a planarization layer and an interconnection layer on the substrate, wherein the planarization layer covers the driving layer and the upper surfaces of the plurality of LED chips, the interconnection layer is positioned on the planarization layer, and the interconnection layer electrically connects the first electrode of each LED chip to the corresponding driving unit.
Optionally, the LED chip is an electrode coplanar chip, the second electrode is located on a surface of the LED chip, which is far away from the surface of the substrate, and the interconnection layer further electrically connects the second electrode with the metal layer; or the LED chip is an electrode different-surface chip, the second electrode is positioned on one side of the LED chip, which is close to the upper surface of the substrate, the depth of the micropore is smaller than the thickness of the metal layer, and when a plurality of LED chips are embedded in the micropores in a one-to-one correspondence manner, the second electrode is in contact with and electrically connected with the metal layer.
According to the LED display provided by the invention, the metal layer and the driving layer are sequentially overlapped on the substrate, the metal layer is internally provided with the plurality of micropores, the LED chip is embedded in each micropore, the driving layer comprises the driving units which are in one-to-one correspondence with the plurality of micropores, and each driving unit is electrically connected with the LED chip in the corresponding micropore. The LED display has the following advantages: firstly, embedding an LED chip in a micropore in a metal layer is beneficial to limiting the LED chip at a set position, and through arranging an electrode of the LED chip in a plane where a driving layer is located, the LED chip and a driving unit can be electrically interconnected by utilizing common processes such as film forming, photoetching, etching and the like, so that the difficulty of realizing electrical interconnection between the LED chip and a corresponding driving element is reduced, and meanwhile, the display resolution is improved; secondly, the LED chip is embedded in the micropores in the metal layer, and the integrated metal layer has good heat conduction performance, so that the heat generated by the LED chip during working is LED out, and the performance of the LED display is improved; and thirdly, as the LED chips are embedded in the micropores in the metal layer, the metal layer can effectively isolate light rays emitted by the LED chips in the adjacent pixel display areas, thereby being beneficial to improving the display effect of the LED display.
According to the manufacturing method of the LED display, the metal layer and the driving layer are sequentially formed on the substrate, then etching is performed to form a plurality of micropores in the metal layer, wherein the micropores are formed corresponding to the pixel display areas on the upper surface of the substrate, the LED chips are used as pixel points of the LED display, then the LED chips are embedded in the micropores in a one-to-one correspondence mode, and the first electrode of each LED chip is electrically connected with a corresponding driving unit in the driving layer by utilizing a metal interconnection process of a semiconductor plane process. The fabrication method is compatible with general semiconductor processes and has the same or similar advantages as the LED displays described above.
Drawings
Fig. 1 is a flow chart of a method for manufacturing an LED display according to an embodiment of the present invention.
Fig. 2a to 2e are schematic cross-sectional views of a method for manufacturing an LED display according to an embodiment of the present invention during implementation.
Fig. 3a to 3e are schematic cross-sectional views illustrating a method for manufacturing an LED display according to another embodiment of the present invention.
Reference numerals illustrate:
1. a 2-LED chip;
100. 200-substrate; 101. 201-an adhesive layer; 110. 210-a metal layer; 120. 220-a driving layer; 121. 221-a buffer layer; 122. 222-an active layer; 124. 224-gate electrode; 126a, 226 a-source electrodes; 126b, 226 b-drain electrodes; 123. 223-a gate insulation layer; 125. 225-an interlayer insulating layer; 127. 227-a protective layer; 10. 20-a drive unit; 120a, 220 a-openings; 110a, 210 a-microwells; 130. 230-planarizing layer; 140. 240-an interconnect layer; 11-a first contact plug; 12-a second contact plug; 13-a third contact plug; 14-fourth contact plugs; 15-a fifth contact plug; 16-sixth contact plugs.
Detailed Description
The LED display and the manufacturing method thereof are further described in detail below with reference to the accompanying drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. It will be understood that in the following description, when a layer, region, pattern, or structure is referred to as being "on" a base, substrate, layer, region, and/or pattern, it can be directly on another layer or substrate, and/or intervening layers may also be present. Similarly, when a layer is referred to as being "under" another layer, it can be directly under the other layer and/or one or more intervening layers may also be present. In addition, references to "upper" and "lower" on the respective layers may be made based on the drawings.
The terms "first," "second," and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other sequences than described or illustrated herein. Similarly, if a method described herein comprises a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method. In the drawings, if the components of the embodiments of the present invention are the same as those of the other drawings, the components may be easily identified in all the drawings, but in order to make the description of the embodiments clearer, the present specification does not refer to all the same components in each drawing by the same reference numerals.
Fig. 1 is a flow chart of a method for manufacturing an LED display according to an embodiment of the present invention. Referring to fig. 1, the method for manufacturing the LED display according to the embodiment of the present invention may include the following steps:
s1: providing a substrate, wherein the upper surface of the substrate is preset with a plurality of pixel display areas and a non-display area for limiting the pixel display areas;
s2: sequentially forming a metal layer and a driving layer on the substrate, wherein the metal layer covers the upper surface of the substrate, the driving layer covers the upper surface of the metal layer, and the driving layer comprises a plurality of driving units which are arranged corresponding to the non-display area;
s3: sequentially etching the driving layer and the metal layer to form openings penetrating the driving layer and corresponding to the pixel display areas and a plurality of micropores in the metal layer;
s4: embedding a plurality of LED chips in the micropores in a one-to-one correspondence manner, wherein the LED chips comprise a first electrode and a second electrode, and the first electrode is positioned on the surface of one side of the LED chips far away from the surface of the substrate;
s5: and sequentially forming a planarization layer and an interconnection layer on the substrate, wherein the planarization layer covers the driving layer and the upper surfaces of the LED chips, the interconnection layer is positioned above the planarization layer and is in contact with the planarization layer, and the interconnection layer electrically connects the first electrode of each LED chip to the corresponding driving unit.
According to the manufacturing method of the LED display, the metal layer and the driving layer are sequentially formed on the substrate, then etching is carried out, openings penetrating through the driving layer and the micropores in the metal layer are formed corresponding to the pixel display areas in the substrate, the LED chips are embedded in the micropores in a one-to-one correspondence mode, and the first electrode of each LED chip is electrically connected with the corresponding driving unit through an interconnection process. The manufacturing method is compatible with a general semiconductor process, and in the formed LED display, the LED chip serving as a pixel point is embedded in the micropore in the metal layer, so that the manufacturing method has the following advantages: firstly, the electrodes of the LED chips and the electrodes of the driving layers are in the same plane, and the LED chips are fixed (namely, the LED chips are limited at set positions) when being transferred to the substrate, so that the difficulty of electric interconnection between the LED chips and the corresponding driving units can be reduced, and meanwhile, the display resolution is improved; secondly, the integrated metal layer has good heat conduction performance, so that heat emitted by the LED chip during working is conducted out, and the performance of the LED display is improved; and the metal layer can effectively isolate light rays emitted by the LED chips positioned in the adjacent pixel display areas, so that the display effect of the LED display is improved. The following describes the method for manufacturing the LED display and the LED display formed by the method in detail with reference to two specific embodiments.
Example 1
Fig. 2a to 2e are schematic cross-sectional views of a method for manufacturing an LED display according to an embodiment of the present invention during implementation. The following describes a method for manufacturing an LED display according to the first embodiment and the LED display formed by the method with reference to fig. 1 and fig. 2a to 2 e.
Referring to fig. 1 and 2a, first, step S1 is performed to provide a substrate 100, and a plurality of pixel display areas EA and a non-display area NEA for defining the plurality of pixel display areas EA are preset on an upper surface of the substrate 100.
In this embodiment, the substrate 100 is used to dispose an LED chip and a driving circuit thereof on one side of the upper surface, and the substrate 100 may be a flexible (flexible) substrate or a rigid (rib) substrate, or may be a transparent plastic (plastic) substrate or a glass substrate. For example, the substrate 100 may include a transparent glass material whose main component is silicon oxide, or an organic material whose main component is Polycarbonate (PC), polyester (PET), a cycloolefin copolymer (cyclic olefin copolymer, COC) substrate, or a metal complex substrate-cycloolefin copolymer (mCOC), and the like, and the substrate 100 may not be limited to the listed types. The substrate 100 of the present embodiment is, for example, a transparent glass substrate with a thickness of about 0.3mm to 1.0mm, wherein the plurality of pixel display areas EA can be predetermined light emitting areas.
Referring to fig. 1 and 2b, step S2 is performed, and a metal layer 110 and a driving layer 120 are sequentially formed on the substrate 100, wherein the metal layer 110 covers the upper surface of the substrate 100, the driving layer 120 covers the upper surface of the metal layer 110, and the driving layer 120 includes a plurality of driving units 10 disposed corresponding to the non-display area NEA.
Specifically, the metal layer 110 may be deposited on the upper surface of the substrate 100 by a process such as Physical Vapor Deposition (PVD), but the present invention is not limited thereto, and in the present embodiment, the metal layer 110 may be a metal foil attached to the upper surface of the substrate 100 in view of shortening the film forming time. The thickness of the metal layer 110 (or the thickness of the metal foil) is about 10 μm to 1000 μm, and the material of the metal layer 110 may include at least one metal selected from stainless steel, copper, nickel, chromium, zinc, and aluminum, or the material of the metal layer 110 may further include an alloy of at least one element selected from iron, copper, nickel, chromium, zinc, and aluminum.
The metal foil may be attached to the upper surface of the substrate 100 by bonding or brazing. Referring to fig. 2b, for example, an adhesive layer 101 may be formed on the upper surface of the substrate 100, and the material of the adhesive layer 101 may include at least one of polyimide, polyester, and polymethyl methacrylate to fix the metal foil to the substrate 100 by adhesion. Alternatively, the adhesive layer 101 may serve as a brazing agent, and may specifically include at least one metal of iron, nickel, chromium, copper, tin, silver, zinc, copper, and aluminum to fix the metal foil to the substrate 100 through a brazing process. The brazing process is a welding method in which a brazing flux lower than the melting point of a weldment and the weldment are heated to the melting temperature of the brazing flux at the same time, and then gaps of solid workpieces are filled with the brazing flux in a liquid state to connect metals. The specific process for attaching the metal layer 110 using the brazing process may be implemented with reference to the disclosed technology.
The driving layer 120 is formed above the metal layer 110, in this embodiment, the driving layer 120 is a multi-layer structure, which includes a plurality of driving units 10 (located in the dashed-line frame area in fig. 2 b), each driving unit 10 is used to control the LED chip that is subsequently disposed corresponding to the pixel display area EA independently or together with other setting signals of the LED display, that is, the positions of the plurality of driving units 10 are formed corresponding to the non-display area NEA. The driving unit 10 may include at least one active component such as a Thin Film Transistor (TFT). In another embodiment of the present invention, the driving unit may include, for example, two thin film transistors and one capacitor (2T 1C structure) to better control the characteristics of the corresponding LED chip such as turn-off and brightness maintenance.
Referring to fig. 2a, forming the driving layer 120 may include the following process, as an example.
First, the method includes the steps of. A buffer layer 121 is formed on the upper surface of the metal layer 110 to provide a flat surface on the metal layer 110 and provide a better interface contact for other materials to be deposited later. The buffer layer 121 may include an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride, and/or an organic material such as polyimide, polyester, or acryl.
Next, the driving unit 10 is formed over the buffer layer 121 using a fabrication process of a thin film transistor, which may include the active layer 122, the gate electrode 124, the source electrode 126a and the drain electrode 126b, the thin film transistor shown in fig. 2a being a top gate structure, but in other embodiments of the present invention, the thin film transistor may also be of various types such as a bottom gate structure. In forming the thin film transistor, the driving layer 120 may further include a gate insulating layer 123 formed on the active layer 122 to insulate the gate electrode 124 from the active layer 122, and an interlayer insulating layer 125 formed on the gate electrode 124 to insulate each of the source electrode 126a and the drain electrode 126b from the gate electrode 124, and the driving layer 120 may further include a protective layer 127 covering the thin film transistor. The method for forming the thin film transistor can be implemented with reference to the disclosed technology. It should be noted that, in the range of the driving unit corresponding to one pixel display area EA (or one pixel point), more than one thin film transistor may be formed, and one or more capacitors may also be formed in the range of the driving unit via, for example, overlapping of the above functional materials, and the thin film transistors and the capacitors may be connected according to a certain functional design and constitute a driving unit for controlling the operation of the pixel point disposed in the corresponding pixel display area EA, and then active control of each pixel point light emitting structure is realized by connecting the one-to-one driving unit with the electrode of the corresponding pixel point.
In addition, in order to control the operation of each pixel of the LED display, a peripheral circuit may be formed on the substrate 100 in a non-display area located at the periphery during or before or after the formation of the metal layer 110 and the driving layer 120, so as to lead out the driving unit 10 and an electrical signal connected to the common electrode for each pixel. In this embodiment, the metal layer 110 may serve as a common electrode of the LED display, which may be electrically connected to a common electrode line in the peripheral circuit.
After the driving layer 120 is formed, referring to fig. 1 and 2c, step S3 is performed to sequentially etch the driving layer 120 and the metal layer 110 to form a plurality of openings 120a penetrating the driving layer 120 and a plurality of micro holes 110a in the metal layer 110 corresponding to the plurality of pixel display areas EA.
Specifically, a surface of the driving layer 120 corresponding to the pixel display area EA may be exposed by a photomask process, and then the exposed surface of the driving layer 120 is etched until a surface of the metal layer 110 corresponding to the pixel display area EA is exposed, and an opening 120a penetrating the driving layer 120 is formed in the driving layer 120. The process of etching the driving layer 120 may be performed by one or more dry etching processes, and the dry etching gas may be selected from HBr, cl 2 、SF 6 、O 2 、N 2 、NF 3 、Ar、He、CHF 3 、C 2 F 6 And CF (compact F) 4 One or more of these gases.
After exposing the surface of the metal layer 110 corresponding to the pixel display area EA, a plurality of micro holes 110a (located under the openings 120a in the driving layer 120 and penetrating the openings 120 a) corresponding to the plurality of pixel display areas EA one by one may be formed in the metal layer 110 by, for example, a wet etching process, downward etching along the exposed surface of the metal layer 110. In this embodiment, the back surface (the surface on the side away from the metal layer 110) of the substrate 100 is taken as the light emitting side of the LED display, and thus etching is preferably performed such that the micro holes 110a penetrate the metal layer 110. Further, in step S3, the portion of the adhesive layer 101 between the upper surface of the substrate 100 and the metal layer 110 corresponding to the pixel display area EA may be etched away or not.
Referring to fig. 1 and 2d, step S4 is performed, a plurality of LED chips 1 are embedded in the plurality of micro holes 110a in a one-to-one correspondence manner, the LED chips 1 include a first electrode P and a second electrode N, the first electrode P is located on a surface of the LED chips 1 far from the upper surface of the substrate 100, the first electrode P and the second electrode N may be electrode pads formed on the surface of the LED chips 1, and the LED chips 1 may emit light after being connected to the corresponding driving circuits. In this embodiment, the LED chip 1 is an electrode coplanar chip, where "electrode coplanar chip" refers to that two lead-out electrodes of the LED chip are both disposed on the same side surface of the chip, for example, a front-mounted LED chip or a flip-chip LED chip may be selected as the LED chip 1, and in this embodiment, the first electrode P and the second electrode N of the LED chip 1 are disposed on the same side surface of the chip in the same direction, that is, the second electrode N is also disposed on the surface of the LED chip 1 far away from the upper surface of the substrate 100. The LED chip 1 may emit light having red (R), green (G), blue (B) colors or light having ultraviolet wavelengths, and the ultraviolet wavelength LED light may be converted into colors in other visible light ranges by using a fluorescent material. The LED chip 1 may be a micro LED, and here, the micro LED may represent an LED of a size of about 1 micron to about 100 microns, but the present embodiment is not limited thereto, and the LED chip 1 may be an LED chip of a size larger or smaller than that of the micro LED in the present embodiment. In other embodiments, more than one LED chip may be embedded in the same micro-hole 110a according to the process and display requirements, and the plurality of LED chips in the same micro-hole 110a are in electrical connection relationship, and the whole may be connected to an external driving circuit through a first electrode P and a second electrode N.
The LED chip 1 may be embedded in the micro via 110a by bonding, and embedding the LED chip 1 in the micro via 110a may include the following processes: dropping an adhesive (not shown) into the micro holes 110a, or coating an adhesive on one or more surfaces of the LED chip 1 excluding the first electrode P and the second electrode N; then, the LED chips 1 are adsorbed on a transferring device, and adsorption components which are arranged in a one-to-one correspondence with the micropores 110a can be designed on the transferring device, so that a plurality of LED chips 1 at adjacent positions can be transferred into the micropores 110a at one time; the LED chip 1 is then transferred into the micro-hole 110a by the transfer device, the LED chip 1 is adhered in the micro-hole 110a by the adhesive, and the LED chip 1 is fixed in the micro-hole 110a by curing. In a direction perpendicular to the upper surface of the substrate 100, the thickness of the LED chip 1 is about 10 μm to 140 μm, and preferably, after the LED chip 1 is embedded in the micro-hole 110a, the upper surface of the LED chip 1 (or the upper surfaces of the first electrode P and the second electrode N) is not higher than the driving layer 120, and more preferably, the thickness of the metal layer 110 and the amount of the adhesive may be adjusted according to the size of the LED chip 1 and the area of the pixel display area EA so that the upper surface of the first electrode P is flush with the source electrode 126a and the drain electrode 126b of the thin film transistor in the corresponding driving unit, which has a technical effect of facilitating the electrical interconnection of the first electrode P and the driving unit 10.
Referring to fig. 1 and 2e, next, step S5 is performed, in which a planarization layer 130 and an interconnection layer 140 are sequentially formed on the substrate 100, the planarization layer 130 covering the driving layer 120 and the upper surfaces of the plurality of LED chips 1, the interconnection layer 140 being located on the planarization layer 130, the interconnection layer 140 electrically connecting the first electrode P of each of the LED chips 1 to the corresponding driving unit 10. The planarization layer 130 is used to solve the level difference caused by the driving layer 120, the opening 120a in the driving layer 120, the micro-hole 110a in the metal layer 110, and the LED chip 1, and the planarization layer 130 may also fill the gaps that may exist between the opening 120a, the micro-hole 110a, and the LED chip 1. The planarization layer 130 may be formed of a single layer or multiple layers of organic materials. The organic material may include polymethyl methacrylate (PMMA) or Polystyrene (PS), and the organic material may further include a phenol-based derivative, an acrylic polymer, an imide polymer, an aromatic ether polymer, an amide polymer, a fluorine-based polymer, a para-xylene polymer, a vinyl alcohol polymer, or a mixture thereof, and the like. The planarization layer 130 may also be formed of stacked inorganic material layers and organic material layers.
The interconnection layer 140 may be electrically connected to the driving unit 10 and the LED chips 1 in the driving layer 120 through the first and second contact plugs 11 and 12 formed in the planarization layer 130, respectively, such that the first electrode P of each LED chip 1 is electrically interconnected with the corresponding driving unit 10. In this embodiment, the driving unit 10 may include a thin film transistor formed in the driving layer 120, and when the drain electrode 126b of the thin film transistor is covered with the protection layer 127, the first contact plug 11 also penetrates through the protection layer 127 above the drain electrode 126 b. The interconnection layer 140 is also electrically connected to the first electrode P of the LED chip 1 through the second contact plug 12 formed in the planarization layer 130. The first contact plug 11, the second contact plug 12 may be formed by etching a contact hole in the planarization layer 130 and then filling a conductive material, for example, by an electroplating process, the material of the interconnection layer 140 may be the same as the conductive material in the contact hole, and the method of forming the first contact plug 11, the second contact plug 12 and the interconnection layer 140 may be implemented using the disclosed technology.
In this embodiment, the LED chip 1 is a lateral LED chip, and the second electrode N and the first electrode P thereof are located on the same direction side of the chip. Further, since the metal layer 110 may serve as a common electrode of the LED display in the present embodiment, the interconnect layer 140 may be electrically connected to the second electrode N of the LED chip 1 through the third contact plug 13 located in the planarization layer 130 and electrically connected to the metal layer 110 through the fourth contact plug 14, where the fourth contact plug 14 penetrates the driving layer 120 under the planarization layer 130 so that the interconnect layer 140 contacts the metal layer 110. That is, the second electrode N of each LED chip 1 is in electrical contact with the metal layer 110 such that the second electrode N forms an electrical interconnection with the common electrode of the LED display to be formed. Although the portion of the interconnect layer 140 connected to the first electrode P and the portion of the interconnect layer 140 connected to the second electrode P may be formed by the same film forming process, they may be disconnected by photolithography and patterning processes in order to avoid a short circuit.
As shown in fig. 2e, the LED display formed by the method for forming an LED display according to the present embodiment includes:
a substrate 100;
a metal layer 110 disposed on the substrate 100, wherein a plurality of micro holes 110a are formed in the metal layer 110, and each micro hole 110a is embedded with an LED chip 1; and
the driving layer 120 disposed on the metal layer 110, where the driving layer 120 includes driving units 10 corresponding to the micro holes 110a one by one, and each driving unit 10 is electrically connected to the LED chip 1 in the corresponding micro hole 110 a.
Further, the LED chip 1 in this embodiment is a lateral LED chip, the first electrode P and the second electrode N thereof are both located on the surface of the LED chip 1 far away from the surface of the substrate 100, and the corresponding micropores 110a formed in the metal layer 110 penetrate through the metal layer 110 (i.e. the etched metal layer 110 is in a hollowed-out grid structure). The LED display may further include a peripheral circuit formed on the substrate 100 (e.g., formed at a peripheral region of an upper surface of the substrate), which may be electrically connected to the plurality of driving units 10, and the metal layer 110 may serve as a common electrode of the LED display (or be connected to a common electrode line in the peripheral circuit). The LED display may further include a planarization layer 130 disposed over the driving layer 120 and an interconnection layer 140 disposed over the planarization layer 130, the interconnection layer 140 electrically connecting the first electrode P of the LED chip 1 to the corresponding driving unit 10 and the second electrode N of the LED chip 1 to the metal layer 110 through the first to fourth contact plugs 11 to 14 disposed in the planarization layer 130, thereby electrically interconnecting the LED chip 1 and its driving circuit.
The LED display has the following advantages: firstly, the LED chip 1 is embedded into the micro-hole 110a in the metal layer 110 below the driving layer 120, which is beneficial to limiting the LED chip 1 at a set position, and the electrode of the LED chip 1 is arranged near or on the plane where the driving layer 120 is located, so that the LED chip and the driving unit can be electrically interconnected by using common processes such as film forming, photoetching, etching and the like, that is, the LED chip 1 and the driving circuit can be electrically interconnected by using a process compatible with a semiconductor process (such as a metal interconnection process), so that the electrical interconnection between the LED chip 1 and the driving circuit by using an electrical connection process such as wire bonding (wire bond) is avoided, which is beneficial to reducing the difficulty of realizing electrical interconnection between the LED chip 1 and the corresponding driving unit 10, and is also beneficial to improving the display resolution; secondly, because the integrated metal layer 110 has good heat conduction performance, the heat generated by the LED display when the LED chip 1 works is easily LED out, which is beneficial to improving the performance of the LED display; again, the metal layer 110 can effectively isolate the light emitted from the LED chip 1 located in the adjacent micro-hole, which is beneficial to improving the display effect of the LED display.
Example two
Fig. 3a to 3e are schematic cross-sectional views illustrating a method for manufacturing an LED display according to another embodiment of the present invention. The following describes a method for manufacturing the LED display according to the second embodiment with reference to fig. 1 and fig. 3a to 3 e.
Referring to fig. 1 and 3a, first, step S1 is performed to provide a substrate 200, and a plurality of pixel display areas EA and a non-display area NEA for defining the plurality of pixel display areas EA are preset on an upper surface of the substrate 200. The substrate 200 may be the same, similar or different from the first embodiment, and specifically, the substrate 200 of this embodiment may also be made of an opaque material such as metal, and the LED display formed later emits light from a side far from the back surface of the substrate 200 (i.e., a top-emission display).
Referring to fig. 1 and 3b, step S2 is performed, and a metal layer 210 and a driving layer 220 are sequentially formed on the substrate 200, wherein the metal layer 210 covers the upper surface of the substrate 200, the driving layer 220 covers the upper surface of the metal layer 210, and the driving layer 220 includes a plurality of driving units 20 disposed corresponding to the non-display area NEA. The method of forming the metal layer 210 and the driving layer 220 on the substrate 300 according to the present embodiment may be performed with reference to the procedure of the first embodiment. As shown in fig. 3b, the driving layer 220 formed through step S2 may include a buffer layer 221, an active layer 222 of a thin film transistor, a gate insulating layer 223 (isolating the active layer 222 and the gate electrode 224), a gate electrode 224 of the thin film transistor, an interlayer insulating layer 225 (isolating the gate electrode 224 from the source electrode 226a and the drain electrode 226 b) which are sequentially formed on the upper surface of the metal layer 210, the source electrode 226a and the drain electrode 226b of the thin film transistor are formed on the upper surface of the interlayer insulating layer 225, and the driving layer 220 may further include a protective layer 227 covering the thin film transistor, in other embodiments, the protective layer 227 may not be formed, but the source electrode 226a and the drain electrode 226b may be covered with a planarization layer after the LED chip is embedded. In addition, during or before and after the formation of the metal layer 210 and the driving layer 220, a peripheral circuit may be formed on the substrate 200 at the peripheral non-display area NEA to draw out the electrical signals of the driving unit 20 and the common electrode connected to each pixel point. In this embodiment, the metal layer 210 may serve as a common electrode of the LED display.
Referring to fig. 1 and 3c, step S3 is performed to sequentially etch the driving layer 220 and the metal layer 210 to form a plurality of openings 220a penetrating the driving layer 220 and a plurality of micro holes 210a in the metal layer 210 corresponding to the plurality of pixel display areas EA.
The plurality of openings 220a and the micro holes 210a may be formed using the same or similar process as one of the embodiments. However, the present embodiment is different from the first embodiment in that the plurality of micro holes 210a formed in the metal layer 210 do not penetrate the metal layer 210, but the depth of the micro holes 210a is made smaller than the thickness of the metal layer 210, for example, the metal layer 210 is etched to remain with a thickness of about 10 μm to 20 μm corresponding to the position of the micro holes 210a, in order to bring the electrodes of the LED chip embedded in the latter step into contact with the bottom surfaces of the micro holes 210a to form electrical connection.
Referring to fig. 1 and 3d, step S4 is performed, in which a plurality of LED chips 2 are embedded in the plurality of micro holes 210a in a one-to-one correspondence manner, in this embodiment, the LED chip 1 is an electrode different-surface chip, where "electrode different-surface chip" refers to that two extraction electrodes of the LED chip are respectively disposed on two opposite side surfaces of the chip, for example, a vertical LED chip may be selected as the LED chip 2. Since the first electrode P and the second electrode N of the LED chip 2 are respectively located on opposite side surfaces of the chip, the first electrode P is disposed on a surface of the LED chip 2 on a side away from the upper surface of the substrate 200, and the second electrode N is located on a surface of the LED chip 2 on a side close to the upper surface of the substrate 100. The LED chip 2 may be a micro LED or an LED having a size larger or smaller than that of the micro LED. In this embodiment, a vertical chip that emits light along the side of the upper surface where the first electrode P is located may be selected as the LED chip 2, and preferably the area occupied by the first electrode P on the upper surface is smaller, so as to facilitate formation of a pixel having better top emission characteristics. In other embodiments, more than one LED chip may be embedded in the same micro-hole 210a according to the process and display requirements, and the plurality of LED chips in the same micro-hole 210a are in electrical connection relationship, and the whole may be connected to an external driving circuit through a first electrode P and a second electrode N.
The plurality of LED chips 2 may be embedded in the corresponding plurality of micro holes 210a by the same or similar process as the method of embedding the LED chips 1 in the micro holes 110a in the first embodiment. In this embodiment, the metal layer 210 may also serve as a common electrode of the LED display to be formed, so that the second electrode N may be directly contacted with the bottom surface of the micro hole 210a when the LED chip 2 is embedded, thereby electrically interconnecting the second electrode N and the common electrode. In order to make good electrical contact between the second electrode N and the metal layer 210 at the bottom of the micro-hole 210a, a conductive paste, for example, may be coated on the surface of the second electrode N to adhere to the metal layer 210 at the bottom of the micro-hole 210 a. Preferably, after the LED chip 2 is embedded in the micro hole 210a, the upper surface of the LED chip 2 (or the upper surface of the first electrode P) is not higher than the driving layer 220, and more preferably, the thickness of the metal layer 210 and the amount of the adhesive may be adjusted according to the size of the LED chip 2 and the area of the pixel display area EA so that the upper surface of the first electrode P of the LED chip 2 is flush with the source electrode 226a and the drain electrode 226b of the thin film transistor in the corresponding driving unit 20, which has the technical effect of facilitating the electrical interconnection of the first electrode P and the corresponding driving unit 20. However, the present invention is not limited thereto, and in other embodiments, the upper surface of the LED chip embedded in the micro via 210a may be higher than the upper surface of the driving layer 220.
Referring to fig. 1 and 3e, next, step S5 is performed, in which a planarization layer 230 and an interconnection layer 240 are sequentially formed on the substrate 200, the planarization layer 230 covering the driving layer 220 and the upper surfaces of the plurality of LED chips 2, the interconnection layer 240 being located on the planarization layer 230, the interconnection layer 240 electrically connecting the first electrode P of each of the LED chips 2 to the corresponding driving unit 20. The planarization layer 230 and the interconnection layer 240 in this embodiment may be formed using the same or similar materials and methods as those in the first embodiment, and the planarization layer 230 is preferably made of a material with better light transmittance so that the LED chip 2 in the LED display to be formed emits light along the side facing the planarization layer 230. The planarization layer 230 serves to solve the level difference caused by the driving layer 220, the opening 220a in the driving layer 220, the micro-hole 210a in the metal layer 210, and the LED chip 2, and may also fill in a gap that may exist between the opening 220a, the micro-hole 210a, and the LED chip 2. The interconnection layer 240 serves to electrically interconnect the first electrode P of each LED chip 2 with the corresponding driving unit 20, and in particular, the interconnection layer 240 may be electrically connected to the driving unit 20 (specifically, for example, a thin film transistor therein) in the driving layer 220 through the fifth contact plug 15 formed in the planarization layer 230 so that the first electrode P of each LED chip 1 is electrically interconnected with the corresponding driving unit 10. In this embodiment, the driving unit 20 may include a thin film transistor formed in the driving layer 120, and when the drain electrode 226b of the thin film transistor is covered with the protection layer 227, the fifth contact plug 15 also penetrates the protection layer 227 above the drain electrode 226 b. The interconnection layer 240 is also electrically connected to the first electrode P of the LED chip 2 through the sixth contact plug 16 formed in the planarization layer 230. Since the LED chip 2 in the present embodiment is a vertical LED chip, the first electrode P and the second electrode N thereof can be electrically connected to the driving unit 20 in the driving layer 220 and the metal layer 210 (serving as a common electrode) under the driving layer 220, respectively, the driving unit 20 and the metal layer 210 can be designed to be connected to peripheral circuits formed on the substrate 200, and thus the external power source and the driver can control the turn-off of the LED chip 2 and other display characteristics.
As shown in fig. 3e, the LED display formed by the method for forming an LED display according to the present embodiment includes:
a substrate 200;
a metal layer 210 disposed on the substrate 200, wherein a plurality of micro holes 210a are formed in the metal layer 210, and each micro hole 210a is embedded with an LED chip 2; and
the driving layer 220 disposed on the metal layer 210, where the driving layer 220 includes driving units 20 corresponding to the micro holes 210a one by one, and each driving unit 20 is electrically connected to the LED chip 2 in the corresponding micro hole 210 a.
Further, the LED chip 2 in this embodiment is an electrode out-of-plane chip, and the first electrode P and the second electrode N thereof are respectively located on the surface of the LED chip 2 on the side far from the upper surface of the substrate 100 and the surface on the side close to the upper surface of the substrate 100, and correspondingly, in the direction perpendicular to the upper surface of the substrate 100, the depth of the micro-hole 210a is smaller than the thickness of the metal layer 210. The LED display may further include a peripheral circuit formed on the substrate 100 (e.g., formed at a peripheral region of an upper surface of the substrate), the peripheral circuit may be electrically connected with the plurality of driving units 20, the metal layer 210 may serve as a common electrode of the LED display (or be connected with a common electrode line in the peripheral circuit), and the second electrode N of the LED chip 2 may be electrically interconnected with the common electrode of the LED display by being in surface contact with the metal layer 210 within the micro-hole 210 a. The LED display may further include a planarization layer 230 disposed over the driving layer 220, and an interconnection layer 240 disposed over the planarization layer 230, the interconnection layer 240 electrically connecting the first electrode P to the corresponding driving unit 20 through the fifth contact plug 15 and the sixth contact plug 16 disposed in the planarization layer 230.
The LED display has the following advantages: firstly, the LED chip 2 is embedded into the micro-hole 210a in the metal layer 210 below the driving layer 220, which is favorable for limiting the LED chip 1 at a set position, and the electrode of the LED chip 2 is arranged near or on the plane where the driving layer 220 is located, so that the LED chip and the driving unit can be electrically interconnected by utilizing the processes of general film forming, photoetching, etching and the like, thereby reducing the difficulty of realizing electrical interconnection between the LED chip 2 and the corresponding driving unit 20, and being favorable for improving the display resolution; secondly, the integrated metal layer 210 has good heat conduction performance, so that the heat emitted by the LED chip 2 during working is favorably LED out, and the performance of the LED display is favorably improved; again, the metal layer 210 can effectively isolate the light emitted from the LED chip 2 located in the adjacent micro-hole 210a, which is beneficial to improving the display effect of the LED display.
In other embodiments, in order to form the LED display of the present invention, after the metal layer is bonded (or deposited) on the substrate, the metal layer is etched to form a micro-hole array, then the corresponding LED chip (e.g., a lateral chip) is embedded in the micro-hole, and then a driving layer covering the metal layer and the LED chip is formed, and the driving unit in the driving layer is electrically connected with the LED chip in the micro-hole; the method can omit the step of etching the driving layer to form an opening corresponding to the pixel display area, for example, when the LED display is a bottom emission display (for example, when the substrate is a transparent substrate and the micropores penetrate through the metal layer), the driving unit can also be arranged in the area right above the micropores, which is beneficial to improving the opening ratio of the pixel points and improving the display resolution.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different manner from other embodiments, and identical and similar parts between the embodiments are referred to each other.
The foregoing description is only illustrative of the preferred embodiments of the present invention, and is not intended to limit the scope of the claims, and any person skilled in the art may make any possible variations and modifications to the technical solution of the present invention using the method and technical content disclosed above without departing from the spirit and scope of the invention, so any simple modification, equivalent variation and modification made to the above embodiments according to the technical matter of the present invention fall within the scope of the technical solution of the present invention.
Claims (9)
1. An LED display, comprising:
a substrate;
the metal layer is arranged on the substrate, a plurality of micropores are formed in the metal layer, and each micropore is embedded with an LED chip; and
the driving layer is arranged on the metal layer and comprises driving units corresponding to the micropores one by one, and each driving unit is electrically connected with the LED chip in the corresponding micropore;
The LED chip comprises a first electrode and a second electrode, wherein the first electrode is electrically connected with the corresponding driving unit, and the second electrode is electrically connected with the metal layer.
2. The LED display of claim 1, wherein a peripheral circuit is further disposed on the substrate, the peripheral circuit being electrically connected to the plurality of driving units; the metal layer is connected with a common electrode line in the peripheral circuit.
3. The LED display of claim 1, wherein the LED chip is an electrode coplanar chip, the first electrode and the second electrode are both located on a side of the upper surface of the LED chip away from the substrate, and the corresponding micro-holes penetrate through the metal layer; or the LED chip is an electrode different-surface chip, the first electrode is positioned on one side of the LED chip far away from the upper surface of the substrate, the second electrode is positioned on one side of the LED chip near the upper surface of the substrate, and the depth of the corresponding micropore is smaller than the thickness of the metal layer.
4. A LED display according to any one of claims 1 to 3, wherein the thickness of the metal layer is 10 μm to 1000 μm in a direction perpendicular to the surface of the substrate.
5. A LED display as claimed in any one of claims 1 to 3, characterized in that the material of the metal layer comprises at least one metal of stainless steel, copper, nickel, chromium, zinc, aluminum, or an alloy of at least one element of iron, copper, nickel, chromium, zinc, aluminum.
6. A LED display as claimed in any one of claims 1 to 3, wherein the metal layer is a metal foil, the LED display further comprising an adhesive layer disposed between the upper surface of the substrate and the metal foil to bond the substrate and the metal foil.
7. The LED display of claim 6, wherein the material of the adhesive layer comprises at least one of polyimide, polyester, polymethyl methacrylate, or at least one of iron, nickel, chromium, copper, tin, silver, zinc, copper, aluminum.
8. A method of fabricating an LED display, comprising:
providing a substrate, wherein the upper surface of the substrate is preset with a plurality of pixel display areas and a non-display area for limiting the pixel display areas;
sequentially forming a metal layer and a driving layer on the substrate, wherein the metal layer covers the upper surface of the substrate, the driving layer covers the upper surface of the metal layer, and the driving layer comprises a plurality of driving units formed corresponding to the non-display area;
Sequentially etching the driving layer and the metal layer to form openings penetrating the driving layer and corresponding to the pixel display areas and a plurality of micropores in the metal layer;
embedding a plurality of LED chips in the micropores in a one-to-one correspondence manner, wherein the LED chips comprise a first electrode and a second electrode, the first electrode is positioned on the surface of one side of the LED chips far away from the surface of the substrate, and the second electrode is used for being electrically connected with the metal layer; the method comprises the steps of,
and forming a planarization layer and an interconnection layer on the substrate in sequence, wherein the planarization layer covers the driving layer and the upper surfaces of the LED chips, the interconnection layer is positioned on the planarization layer, and the interconnection layer enables the first electrode of each LED chip to be electrically connected to the corresponding driving unit.
9. The method of manufacturing an LED display of claim 8, wherein the LED chip is an electrode coplanar chip, the second electrode is located on a surface of the LED chip on a side away from the substrate surface, and the interconnect layer further electrically connects the second electrode to the metal layer; or the LED chip is an electrode different-surface chip, the second electrode is positioned on one side of the LED chip, which is close to the upper surface of the substrate, the depth of the micropore is smaller than the thickness of the metal layer, and when a plurality of LED chips are embedded in the micropores in a one-to-one correspondence manner, the second electrode is in contact with and electrically connected with the metal layer.
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| CN109873007B (en) * | 2019-04-02 | 2021-02-26 | 深圳市华星光电半导体显示技术有限公司 | Active matrix micro-LED display panel |
| WO2021120075A1 (en) * | 2019-12-19 | 2021-06-24 | 重庆康佳光电技术研究院有限公司 | Tft structure, light-emitting member, display device, and preparation method therefor |
| CN111769048B (en) * | 2020-07-10 | 2022-01-04 | 深圳市双禹盛泰科技有限公司 | Display screen and manufacturing method thereof |
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