CN110703501A - Light-emitting substrate, backlight module and display panel - Google Patents
Light-emitting substrate, backlight module and display panel Download PDFInfo
- Publication number
- CN110703501A CN110703501A CN201911038638.3A CN201911038638A CN110703501A CN 110703501 A CN110703501 A CN 110703501A CN 201911038638 A CN201911038638 A CN 201911038638A CN 110703501 A CN110703501 A CN 110703501A
- Authority
- CN
- China
- Prior art keywords
- light
- thin film
- film transistor
- array substrate
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
Abstract
The application provides a luminous base plate, backlight unit and display panel, luminous base plate includes: the array substrate comprises a thin film transistor array layer, and the thin film transistor array layer comprises a thin film transistor for driving the light-emitting element to emit light; the light-emitting element is arranged on the array substrate and is electrically connected with the thin film transistor; the light shading unit is arranged corresponding to the active layer of the thin film transistor, and the orthographic projection of the light shading unit on the plane of the array substrate at least covers the orthographic projection of the active layer of the thin film transistor on the plane of the array substrate. The shading unit and the active layer are correspondingly arranged, so that light rays emitted to the active layer are shielded by the shading unit, and the performance of the thin film transistor device is improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a light-emitting substrate, a backlight module and a display panel.
Background
Currently, as a current-driven device, a Micro LED (Micro Light Emitting diode) generally requires a high-performance thin film transistor for control, and thus, an oxide thin film transistor is a preferred target for development in the industry.
When an oxide such as IGZO or ITZO is used as a channel layer, it is advantageous to design a thin film transistor device with high resolution and high brightness, but when a Micro LED is mounted on a high performance thin film transistor, light emitted from the Micro LED is scattered/reflected onto a thin film transistor substrate, and such reflection of internal light seriously affects the performance and stability of the thin film transistor device.
Disclosure of Invention
The application provides a luminescent substrate, backlight unit and display panel, has improved the performance and the stability of thin-film transistor device.
The present application provides a light emitting substrate, which includes:
the array substrate comprises a thin film transistor array layer, wherein the thin film transistor array layer comprises a thin film transistor for driving a light-emitting element to emit light;
the light-emitting element is arranged on the array substrate and is electrically connected with the thin film transistor; and
the shading unit is arranged corresponding to the active layer of the thin film transistor; the orthographic projection of the shading unit on the plane of the array substrate at least covers the orthographic projection of the active layer of the thin film transistor on the plane of the array substrate.
In the light emitting substrate of the present application, an orthographic projection of the light shielding unit on a plane of the array substrate covers an orthographic projection of the thin film transistor on the plane of the array substrate.
In the light emitting substrate of the present application, an orthogonal projection of the thin film transistor on a plane of the array substrate is located outside an orthogonal projection of the light emitting element on a plane of the array substrate.
In the light emitting substrate of the present application, the light shielding unit is disposed on the array substrate and located outside the light emitting element.
In the light emitting substrate of the present application, the light shielding unit is disposed in the thin film transistor array layer.
In the light emitting substrate of the present application, an orthogonal projection of the thin film transistor on a plane of the array substrate is located in an orthogonal projection of the light emitting element on a plane of the array substrate.
In the light-emitting substrate of the present application, the light-emitting element is a Mini LED chip or a micro LED chip.
The application provides a backlight module, which comprises the light-emitting substrate.
The present application also provides a display panel, which includes:
the array substrate comprises a thin film transistor array layer, wherein the thin film transistor array layer comprises a thin film transistor for driving a light-emitting element to emit light;
the light-emitting element is arranged on the array substrate and is electrically connected with the thin film transistor; and
the shading unit is arranged corresponding to the active layer of the thin film transistor; the orthographic projection of the shading unit on the plane of the array substrate at least covers the orthographic projection of the active layer of the thin film transistor on the plane of the array substrate.
In the display panel of the present application, an orthographic projection of the light shielding unit on a plane of the array substrate covers an orthographic projection of the thin film transistor on the plane of the array substrate.
In the display panel of the application, the light emitting elements are Micro LED chips, and the Micro LED chips are arrayed on the array substrate.
In the display panel of the present application, the light emitting elements include a first light emitting element, a second light emitting element, and a third light emitting element, each of which forms one pixel unit;
the array substrate comprises a pixel circuit unit for driving the pixel unit to display and emit light, and the pixel circuit unit comprises the thin film transistor;
the orthographic projection of the pixel circuit unit on the plane of the array substrate is positioned outside the orthographic projection of the pixel unit on the plane of the array substrate.
The application provides a luminous base plate, backlight unit and display panel, through corresponding the setting with shading unit and active layer to the shading unit shields the light of directive active layer, has avoided light to cause the damage to the active layer, thereby has improved the performance and the stability of thin-film transistor device.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a light-emitting substrate according to a first embodiment of the present application;
fig. 2 is a schematic structural diagram of a light-emitting substrate according to a second embodiment of the present application;
fig. 3 is a schematic structural diagram of a light-emitting substrate according to a third embodiment of the present application;
fig. 4 is a schematic structural diagram of a light-emitting substrate according to a fourth embodiment of the present application;
fig. 5 is a schematic structural diagram of a backlight module provided in the embodiment of the present application;
fig. 6 is a schematic structural diagram of a display panel provided in an embodiment of the present application;
fig. 7 is a schematic structural diagram of a pixel arrangement in a display panel according to an embodiment of the present disclosure;
fig. 8 is a schematic structural diagram of the pixel unit in fig. 7.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following embodiments of the present application, the light-emitting element is electrically connected to the thin film transistor through the via electrode, but the present application is not limited thereto.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a light emitting substrate according to a first embodiment of the present application. The light emitting substrate 100 provided in the first embodiment of the present application includes an array substrate 10, a light emitting element 14, and a light shielding unit 15. The array substrate 10 includes a thin film transistor array layer 12. The thin film transistor array layer 12 includes thin film transistors 13 for driving the light emitting elements 14 to emit light. The light emitting element 14 is disposed on the array substrate 10. The light emitting element 14 is electrically connected to the thin film transistor 13. The light shielding unit 15 is disposed corresponding to the active layer 132 of the thin film transistor 13. The orthographic projection of the light shielding unit 15 on the plane of the array substrate 10 at least covers the orthographic projection of the active layer 132 of the thin film transistor 13 on the plane of the array substrate 10.
Therefore, the light-emitting substrate 100 provided in the first embodiment of the present application shields the light emitted to the active layer 132 through the light-shielding unit 15, so as to prevent the light from damaging the active layer 132, thereby improving the performance and stability of the thin film transistor 13.
The array substrate 10 further includes a substrate 11 and a via electrode 126. The base substrate 11 is located on a side of the thin film transistor array layer 12 away from the light emitting element 14. The communication electrode 126 is disposed on the array substrate 10 and is used for electrically connecting the thin film transistor 13 and the light emitting element 14. The specific position of the communicating electrode 126 may be set according to actual conditions, and the present application does not limit this.
In addition, in the first embodiment of the present application, the thin film transistor array layer 12 further includes a buffer layer 121, a gate insulating layer 122, a dielectric insulating layer 123, a planarization layer 124, and a protection layer 125, which are sequentially disposed on the substrate base plate 11. Here, the thin film transistor 13 is disposed in the gate insulating layer 122, the dielectric insulating layer 123, and the planarization layer 124.
It is understood that the film structure of the thin film transistor array layer 12 and the specific position of the thin film transistor 13 can also be set according to actual situations, and are not described herein again.
It should be noted that, in the first embodiment of the present application, the thin film transistor 13 includes the source electrode 131, the active layer 132, the gate electrode 133, and the drain electrode 134 as an example, but is not limited thereto.
The light emitting element 14 may be electrically connected to the drain 134. Specifically, the light emitting element 14 is electrically connected to the drain 134 through the via electrode 126. Of course, in some embodiments, the light emitting element 14 may also be electrically connected to the source 131, and the specific connection manner of the light emitting element 14 and the thin film transistor 13 may be selected according to practical situations, which is not limited in this application.
Optionally, there are one or more light emitting elements 14. The thin film transistors 13 are disposed corresponding to the light emitting elements 14, and each thin film transistor 13 can drive one or more light emitting elements 14 to emit light. In the first embodiment of the present application, the number of the light emitting elements 14 is multiple, and the multiple light emitting elements 14 may be arranged in an array on the array substrate 10, or may be arranged in other ways, which is not described herein again.
Specifically, the light emitting element 14 may be an LED chip. Optionally, the light emitting element 14 is a Mini LED chip or a micro LED chip. The Mini LED chip is 100-200 microns in size, and the MicroLED chip is less than 100 microns in size. In addition, the sizes of the Mini LED chip and the micro LED chip can be selected according to actual conditions, which is not limited in the present application.
Specifically, the light shielding unit 15 is BM (Black Matrix), and the material of the light shielding unit 15 may be Black ink, Black metal such as chrome, or other materials having a light shielding effect. Further, the light shielding unit 15 may be formed by a process such as photolithography, inkjet printing, or screen printing.
Further, the orthographic projection of the light shielding unit 15 on the plane of the array substrate 10 covers the orthographic projection of the thin film transistor 13 on the plane of the array substrate 10. Specifically, the light shielding unit 15 may have the same size as the thin film transistor 13 or may have a size larger than the thin film transistor 13 in a direction parallel to the plane of the array substrate 10. In addition, the specific size of the light shielding unit 15 can be set according to actual conditions, and is not described herein again.
The above arrangement can shield the light emitted to the entire thin film transistor 13 by covering the thin film transistor 13 with the light shielding unit 15. In addition, the light shielding unit 15 transversely extends to a region beyond the thin film transistor 13, and can further play a role in blocking light, so as to prevent light from emitting to the thin film transistor 13 from the side surface, thereby effectively protecting the active layer 132 from being damaged, and further improving the performance of the thin film transistor 13.
In the first embodiment of the present application, an orthogonal projection of the thin film transistor 13 on the plane of the array substrate 10 is located outside an orthogonal projection of the light emitting element 14 on the plane of the array substrate 10. Of course, in some embodiments, the orthographic projection of the thin film transistor 13 on the plane of the array substrate 10 may also partially overlap with the orthographic projection of the light emitting element 14 on the plane of the array substrate 10, and this embodiment is not to be construed as limiting the present application.
Further, the light shielding unit 15 is disposed on the array substrate 10 and outside the light emitting element 14. Since the oxide semiconductor is extremely unstable under strong light and ultraviolet light, light entering the thin film transistor 13 may damage the active layer 132, thereby directly affecting the performance of the thin film transistor 13. In the embodiment, the light shielding unit 15 is disposed in the area of the array substrate 10 covered by the active layer 132, so that the light emitted from the light emitting element 14 to the active layer 132 can be shielded, and the influence of the external environment light on the active layer 132 can be avoided.
The light emitting substrate 100 in the first embodiment of the present application shields light emitted toward the active layer 132 with the light shielding unit 15 by disposing the light shielding unit 15 in correspondence with the active layer 132 and disposing the light shielding unit 15 on the array substrate 10. Meanwhile, the light shielding unit 15 covers the plane of the thin film transistor 13, so that light rays emitted to the whole thin film transistor 13 can be shielded, the active layer 132 is effectively protected from being damaged, and the performance and stability of the thin film transistor 13 are improved.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a light emitting substrate according to a second embodiment of the present application. The second embodiment of the present application differs from the first embodiment in that: the light shielding unit 15 is disposed in the thin film transistor array layer 12.
In the second embodiment of the present application, the light shielding unit 15 is located in the protective layer 125. In addition, the light shielding unit 15 may be located in other film structures according to the film structure of the thin film transistor array layer 12 and the specific position of the thin film transistor 13, and this embodiment is not to be construed as a limitation to the present application.
The light emitting substrate 100 in the second embodiment of the present application shields light emitted toward the active layer 132 with the light shielding unit 15 by disposing the light shielding unit 15 in correspondence with the active layer 132 and disposing the light shielding unit 15 in the thin film transistor array layer 12. Meanwhile, the light shielding unit 15 covers the plane of the thin film transistor 13, so that light rays emitted to the whole thin film transistor 13 can be shielded, the active layer 132 is effectively protected from being damaged, and the performance and stability of the thin film transistor 13 are improved.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a light emitting substrate according to a third embodiment of the present application. The third embodiment of the present application differs from the first embodiment in that: the light shielding unit 15 includes a first light shielding unit 151 and a second light shielding unit 152. The first light shielding unit 151 is disposed on the array substrate 10 and outside the light emitting element 14. The second light shielding unit 152 is disposed in the thin film transistor array layer 12 and located at a side of the thin film transistor 13.
Specifically, in the direction perpendicular to the plane of the array substrate 10, the second light shielding unit 152 is located on the side of the thin film transistor 13 away from the light emitting element 14. Of course, in some embodiments, the second light shielding unit 152 may also be located on one side of the thin film transistor 13 close to the light emitting element 14 or on both sides of the thin film transistor 13, which is not limited in this application.
Alternatively, the second light shielding unit 152 is disposed in the dielectric insulating layer 123 and the planarization layer 124 of the thin film transistor 13. Of course, in some embodiments, the second light shielding unit 152 may also penetrate through other layers in the thin film transistor array layer 12, such as the gate insulating layer 122 and/or the protection layer 125, and thus may further shield light.
It is understood that, in an actual process, a groove matched to the second light shielding unit 152 may be formed in a corresponding film layer of the thin film transistor array layer 12 through a photolithography process, and the second light shielding unit 152 may be formed in the groove.
In the above arrangement, the second light shielding unit 152 is disposed on the side surface of the thin film transistor 13, so that light incident into the thin film transistor 13 can be laterally blocked, the active layer 132 is protected from being damaged, and the performance of the device of the thin film transistor 13 is improved.
Further, in some embodiments, the second light shielding unit 152 may further form a ring structure around the periphery of the thin film transistor 13, so as to completely shield the light emitted to the array substrate 10, and to prevent the active layer 132 from being damaged to the maximum extent, so as to further improve the performance of the thin film transistor 13 device.
In the light emitting substrate 100 in the third embodiment of the present application, the light shielding unit 15 is disposed corresponding to the active layer 132, the first light shielding unit 151 is disposed on the array substrate 10, the second light shielding unit 152 is disposed in the thin film transistor array layer 12, and the light emitted to the active layer 132 is shielded by using the combined action of the first light shielding unit 151 and the second light shielding unit 152, so that the damage probability of the light to the active layer 132 can be further reduced, the active layer 132 is well protected, and the performance and stability of the thin film transistor 13 are improved.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a light emitting substrate according to a fourth embodiment of the present application. The fourth embodiment of the present application differs from the first embodiment in that: the orthographic projection of the thin film transistor 13 on the plane of the array substrate 10 is located in the orthographic projection of the light emitting element 14 on the plane of the array substrate 10.
It is to be understood that, in the fourth embodiment of the present application, the light shielding unit 15 is located in the thin film transistor array layer 12.
Specifically, the light shielding unit 15 is located in the protective layer 125. In addition, the light shielding unit 15 may be located in other film structures according to the film structure of the thin film transistor array layer 12 and the specific position of the thin film transistor 13, and this embodiment is not to be construed as a limitation to the present application.
Therefore, the light emitted from the light emitting element 14 and the external environment directly towards the thin film transistor 13 can be shielded by the above arrangement, so that the light directly emitted into the active layer 132 is blocked, and the active layer 132 is prevented from being damaged.
It should be noted that, in the direction perpendicular to the plane of the array substrate 10, the light shielding unit 15 may also be disposed on the side surface of the thin film transistor 13, and specific disposing manner and beneficial effect may refer to the description of the foregoing embodiments, and are not described herein again.
The light emitting substrate 100 in the fourth embodiment of the present application shields light directly incident on the active layer 132 with the light shielding unit 15 by disposing the light shielding unit 15 corresponding to the active layer 132 and disposing the light shielding unit 15 in the thin film transistor array layer 12. Meanwhile, the light shielding unit 15 covers the plane of the thin film transistor 13, so that light directly emitted to the whole thin film transistor 13 can be shielded, the active layer 132 is effectively protected from being damaged, and the performance and stability of the thin film transistor 13 are improved.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a backlight module according to an embodiment of the present disclosure. The backlight module 200 provided in the embodiment of the present application includes the light emitting substrate 100 mentioned in any of the foregoing embodiments.
In the embodiments of the present application, the light-emitting substrate mentioned in the first embodiment is merely used as an example for description, but the present application is not limited thereto.
The array substrate 20 further includes a substrate base 21 and a via electrode 226. The base substrate 21 is located on a side of the thin film transistor array layer 22 away from the light emitting element 24. The communication electrode 226 is disposed on the array substrate 20 and is used for electrically connecting the thin film transistor 23 and the light emitting element 24. The specific position of the through electrode 226 may be set according to actual conditions, and the present application does not limit this.
In addition, in the embodiment of the present application, the thin film transistor array layer 22 further includes a buffer layer 221, a gate insulating layer 222, a dielectric insulating layer 223, a planarization layer 224, and a protection layer 225 sequentially disposed on the substrate base 21. Among them, the thin film transistor 23 is provided in the gate insulating layer 222, the dielectric insulating layer 223, and the planarization layer 224.
It is understood that the film structure of the thin film transistor array layer 22 and the specific position of the thin film transistor 23 can also be set according to actual situations, and are not described herein again.
It should be noted that, in the embodiment of the present application, the thin film transistor 23 includes the source electrode 231, the active layer 232, the gate electrode 233, and the drain electrode 234 as an example, but the present application is not limited thereto.
Specifically, the backlight module 200 further includes an optical film 26. The optical film 26 includes a diffusion sheet, a reflection sheet, and the like (not shown), which are not described in detail herein.
It is understood that, in some embodiments, when applied to a backlight module of a small-sized lcd, a mask may be disposed over the chips arranged in the array, and then the light shielding unit 25 may be prepared in the corresponding driving region by an inkjet printing or screen printing process.
Optionally, the light emitting element 24 is a Mini LED chip or a micro LED chip, and the Mini LED chip or the micro LED chip is a chip emitting monochromatic light.
Optionally, the backlight module 200 is a direct type backlight module. When the array substrate 20 is used as a back plate to drive the backlight source, the ultra-strong backlight brightness generally increases the intensity of the light reflected or scattered by the light emitting elements 24 onto the array substrate 20, thereby increasing the degradation rate of the performance of the thin film transistors 23.
The light emitted to the thin film transistor 23 can be effectively shielded by the light shielding effect of the light shielding unit 25, so that the performance and stability of the thin film transistor 23 are improved, and the light emitting effect of the backlight light source is ensured. In addition, when the partition driving for local dimming is performed, the light shielding unit 25 is disposed so that light rays between the partitions can be isolated from each other, thereby reducing crosstalk of light rays between the backlight partitions.
In the embodiment of the present application, the backlight module 200 is configured to correspond the light shielding unit 25 to the active layer 232, so that the light shielding unit 25 shields the light emitted to the active layer 232, and the active layer 232 is prevented from being damaged by the light, thereby improving the performance and stability of the thin film transistor 23 and ensuring the light emitting effect of the backlight source.
Referring to fig. 6, fig. 6 is a schematic structural diagram of a display panel 300 according to an embodiment of the present disclosure.
In the present embodiment, only the Micro LED display panel is taken as an example for description, but not limited thereto.
In addition, the present embodiment is described by taking only Micro LED chips with horizontal electrode structures (not shown) as an example. Of course, the display panel 300 provided in this embodiment may also be applied to Micro LED chips with a vertical electrode structure, and this embodiment is not to be construed as limiting the present application.
The embodiment of the present application provides a display panel 300, which includes an array substrate 30, a light emitting element 34, a light shielding unit 35, and a cover plate 36. The array substrate 30 includes a thin film transistor array layer 32. The thin film transistor array layer 32 includes thin film transistors 33 for driving the light emitting elements 34 to emit light. The light emitting element 34 is disposed on the array substrate 30. The light emitting element 34 is electrically connected to the thin film transistor 33. The light shielding unit 35 is disposed corresponding to the active layer 332 of the thin film transistor 33. The orthographic projection of the light shielding unit 35 on the plane of the array substrate 30 at least covers the orthographic projection of the active layer 332 on the plane of the array substrate 30.
Specifically, the cover plate 36 is located on a side of the light emitting element 34 away from the array substrate 30. The cover plate 36 may be a glass cover plate. In addition, other film layers, such as a protective film for protecting the light emitting element 34, may be disposed between the array substrate 30 and the cover plate 36, and are not described herein again.
Therefore, the display panel 300 according to the embodiment of the present disclosure shields the light emitted to the active layer 332 through the light shielding unit 35, and prevents the light from damaging the active layer 332, thereby improving the performance and stability of the thin film transistor 33.
The array substrate 30 further includes a substrate 31 and a communication electrode 326. The base substrate 31 is located on a side of the thin film transistor array layer 32 away from the light emitting element 34. The communication electrode 326 is disposed on the array substrate 30 and electrically connects the thin film transistor 33 and the light emitting device 34. The specific position of the communication electrode 326 may be set according to actual conditions, and the present application is not limited thereto.
In addition, in the embodiment of the present application, the thin film transistor array layer 32 further includes a buffer layer 321, a gate insulating layer 322, a dielectric insulating layer 323, a planarization layer 324, and a protection layer 325, which are sequentially disposed on the substrate base plate 31. Among them, the thin film transistor 33 is provided in the gate insulating layer 322, the dielectric insulating layer 323, and the planarization layer 324.
It is understood that the film structure of the thin film transistor array layer 32 and the specific position of the thin film transistor 33 can also be set according to actual situations, and are not described herein again.
It should be noted that, in the embodiment, the thin film transistor 33 includes the source electrode 331, the active layer 332, the gate electrode 333, and the drain electrode 334, which is not limited to this.
Further, the orthographic projection of the light shielding unit 35 on the plane of the array substrate 30 covers the orthographic projection of the thin film transistor 33 on the plane of the array substrate 30. Therefore, in this arrangement, the light shielding unit 35 covers the plane where the thin film transistor 33 is located, so that light emitted to the entire thin film transistor 33 can be shielded, and the active layer 332 is effectively protected from being damaged.
Specifically, the light emitting element 34 is a plurality of Micro LED chips. A plurality of Micro LED chips are arrayed on the array substrate 30.
It is understood that the light blocking unit 35 may be formed through a photolithography process during the fabrication of the Micro LED display panel. Specifically, after the array substrate 30 is prepared, the light shielding unit 35 may be prepared through a photolithography process, and then the Micro LED chip is transferred onto the array substrate 30 provided with the light shielding unit 35 by using the transfer substrate loaded with the Micro LED chip.
Referring to fig. 7 and 8, fig. 7 is a schematic structural diagram of a pixel arrangement in a display panel according to an embodiment of the present disclosure, and fig. 8 is a schematic structural diagram of a pixel unit in fig. 7.
As shown in fig. 8, the light emitting element 34 includes a first light emitting element 341, a second light emitting element 342, and a third light emitting element 343, and each of the first light emitting element 341, the second light emitting element 342, and the third light emitting element 343 forms one pixel unit 34 a.
Specifically, the first light emitting element 341, the second light emitting element 342, and the third light emitting element 343 are a red Micro LED chip, a green Micro LED chip, and a blue Micro LED chip, respectively, and the Micro LED chips of different colors constitute one pixel unit 34a and emit light by being driven by the thin film transistor 33.
In the embodiment of the present application, the array substrate 30 includes a pixel circuit unit 34b for driving the pixel unit 34a to emit light. The pixel circuit unit 34b includes a thin film transistor 33. The orthographic projection of the pixel circuit unit 34b on the plane of the array substrate 30 is located outside the orthographic projection of the pixel unit 34a on the plane of the array substrate 30.
It should be noted that the pixel circuit unit 34b may further include other circuit structures such as a compensation circuit, and the present embodiment is not to be construed as limiting the present application.
Optionally, the pixel units 34a and the pixel circuit units 34b are arranged in a grid shape. Of course, in other embodiments, the pixel units 34a and the pixel circuit units 34b may be arranged in a matrix manner, which is not limited in this application.
In the display panel 300 of the embodiment of the application, the light shielding unit 35 is disposed corresponding to the active layer 332, and the light shielding unit 35 shields light emitted to the active layer 332, so that the active layer 332 is prevented from being damaged by light, and performance and stability of the thin film transistor 33 are improved.
The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (12)
1. A light-emitting substrate, comprising:
the array substrate comprises a thin film transistor array layer, wherein the thin film transistor array layer comprises a thin film transistor for driving a light-emitting element to emit light;
the light-emitting element is arranged on the array substrate and is electrically connected with the thin film transistor; and
the shading unit is arranged corresponding to the active layer of the thin film transistor; the orthographic projection of the shading unit on the plane of the array substrate at least covers the orthographic projection of the active layer of the thin film transistor on the plane of the array substrate.
2. The light-emitting substrate according to claim 1, wherein an orthographic projection of the light-shielding unit on a plane of the array substrate covers an orthographic projection of the thin film transistor on a plane of the array substrate.
3. The light-emitting substrate according to claim 1, wherein an orthogonal projection of the thin film transistor on a plane of the array substrate is located outside an orthogonal projection of the light-emitting element on a plane of the array substrate.
4. The light-emitting substrate according to claim 3, wherein the light-shielding unit is disposed on the array substrate and outside the light-emitting elements.
5. The light-emitting substrate according to claim 3, wherein the light-shielding unit is provided in the thin film transistor array layer.
6. The light-emitting substrate according to claim 1, wherein an orthogonal projection of the thin film transistor on a plane of the array substrate is located within an orthogonal projection of the light-emitting device on a plane of the array substrate.
7. The light-emitting substrate according to claim 1, wherein the light-emitting element is a Mini LED chip or a MicroLED chip.
8. A backlight module comprising the light-emitting substrate according to any one of claims 1 to 7.
9. A display panel, comprising:
the array substrate comprises a thin film transistor array layer, wherein the thin film transistor array layer comprises a thin film transistor for driving a light-emitting element to emit light;
the light-emitting element is arranged on the array substrate and is electrically connected with the thin film transistor; and
the shading unit is arranged corresponding to the active layer of the thin film transistor; the orthographic projection of the shading unit on the plane of the array substrate at least covers the orthographic projection of the active layer of the thin film transistor on the plane of the array substrate.
10. The display panel of claim 9, wherein an orthographic projection of the light shielding unit on a plane of the array substrate covers an orthographic projection of the thin film transistor on a plane of the array substrate.
11. The display panel according to claim 9, wherein the light emitting elements are Micro LED chips, and a plurality of the Micro LED chips are arrayed on the array substrate.
12. The display panel according to claim 9, wherein the light-emitting elements include a first light-emitting element, a second light-emitting element, and a third light-emitting element, each of the first light-emitting element, the second light-emitting element, and the third light-emitting element forming one pixel unit;
the array substrate comprises a pixel circuit unit for driving the pixel unit to display and emit light, and the pixel circuit unit comprises the thin film transistor;
the orthographic projection of the pixel circuit unit on the plane of the array substrate is positioned outside the orthographic projection of the pixel unit on the plane of the array substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911038638.3A CN110703501A (en) | 2019-10-29 | 2019-10-29 | Light-emitting substrate, backlight module and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911038638.3A CN110703501A (en) | 2019-10-29 | 2019-10-29 | Light-emitting substrate, backlight module and display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110703501A true CN110703501A (en) | 2020-01-17 |
Family
ID=69202712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911038638.3A Pending CN110703501A (en) | 2019-10-29 | 2019-10-29 | Light-emitting substrate, backlight module and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110703501A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111679496A (en) * | 2020-06-11 | 2020-09-18 | Tcl华星光电技术有限公司 | Backlight module, manufacturing method thereof and display terminal |
| CN112687748A (en) * | 2020-12-29 | 2021-04-20 | 佛山市国星光电股份有限公司 | Backlight module and manufacturing method thereof |
| CN112768590A (en) * | 2020-12-30 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
| CN113192997A (en) * | 2021-04-28 | 2021-07-30 | 武汉华星光电技术有限公司 | Backlight module and display device |
| CN113540308A (en) * | 2020-04-22 | 2021-10-22 | 东莞市中麒光电技术有限公司 | Substrate structure of LED display module and manufacturing method |
| CN113764490A (en) * | 2021-09-06 | 2021-12-07 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel |
| CN115308948A (en) * | 2022-08-22 | 2022-11-08 | 赫曼半导体技术(深圳)有限公司 | Backlight substrate, display module and display device |
| WO2024040843A1 (en) * | 2022-08-23 | 2024-02-29 | 惠科股份有限公司 | Display panel and drive substrate thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120168756A1 (en) * | 2010-12-31 | 2012-07-05 | Inha-Industry Partnership Institute | Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor |
| US20140267683A1 (en) * | 2013-03-15 | 2014-09-18 | LuxVue Technology Corporation | Method of fabricating a light emitting diode display with integrated defect detection test |
| CN104950541A (en) * | 2015-07-20 | 2015-09-30 | 深圳市华星光电技术有限公司 | BOA-type liquid crystal display panel and manufacturing method thereof |
| CN106876386A (en) * | 2017-02-17 | 2017-06-20 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and preparation method thereof, array base palte, display panel |
| CN107422560A (en) * | 2017-09-04 | 2017-12-01 | 京东方科技集团股份有限公司 | A kind of array base palte, its detection method and display device |
| CN109065582A (en) * | 2018-08-02 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of array substrate and display panel, display device |
| CN109786421A (en) * | 2019-02-28 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of display device, display backboard and production method |
| CN109859647A (en) * | 2019-03-29 | 2019-06-07 | 上海天马微电子有限公司 | A kind of display panel and display device |
| CN109935599A (en) * | 2019-03-29 | 2019-06-25 | 上海天马微电子有限公司 | The production method of display panel, display device and display panel |
| CN110112141A (en) * | 2019-04-26 | 2019-08-09 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method |
-
2019
- 2019-10-29 CN CN201911038638.3A patent/CN110703501A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120168756A1 (en) * | 2010-12-31 | 2012-07-05 | Inha-Industry Partnership Institute | Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor |
| US20140267683A1 (en) * | 2013-03-15 | 2014-09-18 | LuxVue Technology Corporation | Method of fabricating a light emitting diode display with integrated defect detection test |
| CN104950541A (en) * | 2015-07-20 | 2015-09-30 | 深圳市华星光电技术有限公司 | BOA-type liquid crystal display panel and manufacturing method thereof |
| CN106876386A (en) * | 2017-02-17 | 2017-06-20 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and preparation method thereof, array base palte, display panel |
| CN107422560A (en) * | 2017-09-04 | 2017-12-01 | 京东方科技集团股份有限公司 | A kind of array base palte, its detection method and display device |
| CN109065582A (en) * | 2018-08-02 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of array substrate and display panel, display device |
| CN109786421A (en) * | 2019-02-28 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of display device, display backboard and production method |
| CN109859647A (en) * | 2019-03-29 | 2019-06-07 | 上海天马微电子有限公司 | A kind of display panel and display device |
| CN109935599A (en) * | 2019-03-29 | 2019-06-25 | 上海天马微电子有限公司 | The production method of display panel, display device and display panel |
| CN110112141A (en) * | 2019-04-26 | 2019-08-09 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540308A (en) * | 2020-04-22 | 2021-10-22 | 东莞市中麒光电技术有限公司 | Substrate structure of LED display module and manufacturing method |
| CN111679496A (en) * | 2020-06-11 | 2020-09-18 | Tcl华星光电技术有限公司 | Backlight module, manufacturing method thereof and display terminal |
| CN111679496B (en) * | 2020-06-11 | 2023-09-26 | Tcl华星光电技术有限公司 | Backlight module, manufacturing method thereof and display terminal |
| CN112687748A (en) * | 2020-12-29 | 2021-04-20 | 佛山市国星光电股份有限公司 | Backlight module and manufacturing method thereof |
| CN112768590A (en) * | 2020-12-30 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
| CN113192997A (en) * | 2021-04-28 | 2021-07-30 | 武汉华星光电技术有限公司 | Backlight module and display device |
| CN113764490A (en) * | 2021-09-06 | 2021-12-07 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel |
| CN115308948A (en) * | 2022-08-22 | 2022-11-08 | 赫曼半导体技术(深圳)有限公司 | Backlight substrate, display module and display device |
| WO2024040843A1 (en) * | 2022-08-23 | 2024-02-29 | 惠科股份有限公司 | Display panel and drive substrate thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110703501A (en) | Light-emitting substrate, backlight module and display panel | |
| KR101242030B1 (en) | Organic Electroluminescent Device | |
| KR100911993B1 (en) | Organic light emitting display device | |
| KR102062842B1 (en) | Organic light emitting diode display and manufacturing method thereof | |
| US9142796B2 (en) | Organic light emitting diode display device | |
| CN110752242B (en) | Display panel and display device | |
| KR20180079078A (en) | Light emitting diode display apparatus and multi screen display apparatus using the same | |
| KR20180032255A (en) | Organic light emitting display device | |
| US20210366996A1 (en) | Display panel and electronic device | |
| US11239295B2 (en) | Organic light-emitting display devices, methods for manufacturing the same, and masks for making supporting members | |
| KR20190036378A (en) | Display device having a touch structure | |
| US20200083280A1 (en) | Top emission microled display and bottom emission microled display and a method of forming the same | |
| KR20050014591A (en) | Color filter substrate and liquid crystal display apparatus having the same | |
| KR20150125207A (en) | Organic light emitting display and method of manufacturing the same | |
| CN114005861A (en) | Display substrate and display device | |
| KR102638950B1 (en) | Electro-luminescence display apparatus | |
| US8248395B2 (en) | Image display device | |
| KR102275727B1 (en) | Flat panel display device module | |
| CN115835687A (en) | Display panel and display device | |
| KR101957145B1 (en) | Organic Light Emitting diode display and method of manufacturing the same | |
| CN111029385A (en) | OLED display panel and display device | |
| CN112071888B (en) | Display screen, preparation method of display screen and electronic equipment | |
| CN110137233B (en) | Array substrate, preparation method thereof and display device | |
| KR102138906B1 (en) | Organic light emitting display device using white organic light emitting element and color filter | |
| CN113451384B (en) | Display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200117 |
|
| RJ01 | Rejection of invention patent application after publication |