WO2024040843A1 - Display panel and drive substrate thereof - Google Patents

Display panel and drive substrate thereof Download PDF

Info

Publication number
WO2024040843A1
WO2024040843A1 PCT/CN2022/143542 CN2022143542W WO2024040843A1 WO 2024040843 A1 WO2024040843 A1 WO 2024040843A1 CN 2022143542 W CN2022143542 W CN 2022143542W WO 2024040843 A1 WO2024040843 A1 WO 2024040843A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
substrate
light shielding
shielding
Prior art date
Application number
PCT/CN2022/143542
Other languages
French (fr)
Chinese (zh)
Inventor
李泽尧
李荣荣
Original Assignee
惠科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠科股份有限公司 filed Critical 惠科股份有限公司
Publication of WO2024040843A1 publication Critical patent/WO2024040843A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield

Definitions

  • the present application relates to the field of display technology, and in particular to a display panel and its driving substrate.
  • Micro LED displays are one of the hot spots in the field of display research today. Compared with OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) displays, Micro LEDs have high reliability and low power consumption. , high brightness and fast response speed. Among them, the design of the drive substrate used to control LED light emission is the core technical content of Micro LED displays and has important research significance. However, since the light-emitting direction of the LED is uncontrolled, there will be lateral light emitted in the direction of the driving substrate. This light will cause temporary or permanent changes in the characteristics of the TFT (Thin Film Transistor) device in the driving substrate. changes, thereby affecting display quality.
  • TFT Thin Film Transistor
  • the usual approach is to add a layer of encapsulated black glue after the LED transfer process to solve the above problems.
  • the black glue causes a huge attenuation of the brightness of the LED.
  • the process that needs to be adopted is cumbersome. , and will cause damage to the LED and affect the transfer yield. Therefore, another more convenient method is urgently needed to solve this problem.
  • the main technical problem to be solved by this application is to provide a display panel and its driving substrate to solve the problem in the prior art that the lateral light emitted by the LED towards the driving substrate causes temporary or permanent changes in the characteristics of the thin film transistor device in the driving substrate. .
  • the first technical solution provided by this application is to provide a driving substrate for driving inorganic light-emitting diodes to emit light.
  • the driving substrate includes:
  • the gate electrode, the first insulating layer, the active layer and the electrode layer are arranged on the substrate in sequence;
  • the electrode layer includes a source electrode and a drain electrode arranged on the same layer;
  • the method also includes a light-shielding portion, which is located between the electrode layer and the substrate, at least partially overlaps with the electrode layer, is spaced apart from the active layer, and passes through the first insulating layer; and/or the light-shielding portion is at least partially overlapped with the electrode layer. It is located on the side of the electrode layer away from the substrate and covers the active layer.
  • the light-shielding part includes a first light-shielding part, which is at least partially located on a side of the electrode layer away from the substrate and covers the active layer.
  • the light shielding part further includes a second light shielding part, the second light shielding part is located between the substrate and the electrode layer and passes through the first insulating layer.
  • first light-shielding part and the second light-shielding part are provided independently of each other; the second light-shielding part and the electrode layer are made of the same material and are connected to each other.
  • the number of the second light-shielding parts is two, and the two second light-shielding parts are respectively arranged on opposite sides of the active layer along the direction from the source electrode to the drain electrode; the two second light-shielding parts are located on the first insulation
  • the orthographic projection on the layer matches the orthographic projection of the surrounding active layer on the first insulating layer.
  • the second insulating layer is disposed on the side of the electrode layer away from the substrate;
  • the first light-shielding part includes a first light-shielding top, and the first light-shielding top is disposed on the side of the second insulating layer away from the substrate. , and only corresponds to the active layer setting and covers the active layer.
  • the first light-shielding part further includes a first light-shielding side part, the first light-shielding side part is located between the first light-shielding top and the electrode layer, and passes through the second insulating layer and extends to the surface of the electrode layer.
  • the first light-shielding side part is a ring-shaped structure, and the projection of the active layer on the second insulation layer is located within the ring-shaped structure.
  • the first light-shielding top part and the first light-shielding side part have an integrally formed structure and are made of black insulating material.
  • the second technical solution provided by this application is to provide a display panel.
  • the display surface includes a driving substrate and a plurality of inorganic light-emitting diodes.
  • the driving substrate is the above-mentioned driving substrate.
  • this application provides a display panel and a driving substrate thereof.
  • the driving substrate is used to drive an inorganic light-emitting diode to emit light.
  • the driving substrate includes a substrate and a first first electrode arranged sequentially on the substrate.
  • the electrode layer includes a source electrode and a drain electrode arranged in the same layer; it also includes a light-shielding portion, the light-shielding portion is located between the electrode layer and the substrate, and at least partially overlaps with the electrode layer , and is spaced apart from the active layer and passes through the first insulating layer; and/or the light-shielding portion is at least partially located on a side of the electrode layer away from the substrate and covers the active layer.
  • Figure 1 is a schematic structural diagram of an embodiment of a display panel provided by this application.
  • Figure 2 is a simple structural schematic diagram of the first embodiment of the driving substrate and light-emitting unit provided by this application;
  • Figure 3 is a simple structural schematic diagram of a second embodiment of a driving substrate and a light-emitting unit provided by this application;
  • Figure 4 is a simple structural schematic diagram of a third embodiment of a driving substrate and a light-emitting unit provided by this application;
  • Figure 5 is a schematic cross-sectional structural diagram of an embodiment of the first light-shielding side part and the active layer at A-A in Figure 4;
  • Figure 6 is a simple structural schematic diagram of a fourth embodiment of a driving substrate and a light-emitting unit provided by this application;
  • Figure 7 is a schematic cross-sectional structural diagram of an embodiment of the second light shielding portion and the active layer at B-B in Figure 6;
  • Figure 8 is a simple structural schematic diagram of the fifth embodiment of the driving substrate and light-emitting unit provided by the present application.
  • Figure 9 is a simple structural schematic diagram of the sixth embodiment of the driving substrate and light-emitting unit provided by this application.
  • Figure 10 is a schematic cross-sectional structural diagram of an embodiment of the second light shielding portion and the active layer at C-C in Figure 9;
  • Figure 11 is a simple structural schematic diagram of the seventh embodiment of the driving substrate and light-emitting unit provided by the present application.
  • FIG. 12 is a schematic cross-sectional structural diagram of an embodiment of the second light shielding portion and the active layer at D-D in FIG. 11 .
  • Driving substrate-1 substrate-11, thin film transistor-12, gate electrode-121, first insulating layer-122, active layer-123, ohmic contact layer-124, electrode layer-125, source electrode-1251 , drain electrode-1252, light-shielding part-13, first light-shielding part-131, first light-shielding top part-1311, first light-shielding side part-1312, second light-shielding part-132, first sub-light-shielding part-1321, Second sub-light shielding part-1322, third sub-light shielding part-1323, fourth sub-light shielding part-1324, incident point-a, wall thickness-d, common electrode-14, first electrode-15, second electrode-16, Flat layer-17, opening structure-171, second insulating layer-18, light-emitting unit-2, anode-21, cathode-22, packaging layer-3, cover plate-4, display panel-100.
  • first”, “second” and “third” in this application are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, features defined as “first”, “second”, and “third” may explicitly or implicitly include at least one of these features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise clearly and specifically limited. All directional indications (such as up, down, left, right, front, back%) in the embodiments of this application are only used to explain the relative positional relationship between components in a specific posture (as shown in the drawings). , sports conditions, etc., if the specific posture changes, the directional indication will also change accordingly.
  • an embodiment means that a particular feature, structure or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application.
  • the appearances of this phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those skilled in the art understand, both explicitly and implicitly, that the embodiments described herein may be combined with other embodiments.
  • FIG. 1 is a schematic structural diagram of an embodiment of a display panel provided by the present application.
  • the display panel 100 includes a driving substrate 1 , a plurality of light-emitting units 2 , an encapsulation layer 3 and a cover plate 4 .
  • the driving substrate 1 is used to drive the light emitting unit 2 to emit light.
  • a plurality of light-emitting units 2 are arranged at intervals on one side of the driving substrate 1 .
  • the encapsulating layer 3 is arranged on one side of the driving substrate 1 .
  • the encapsulating layer 3 surrounds the light-emitting units 2 and fills the gaps between the light-emitting units 2 while covering the light-emitting units 2 . the side away from the substrate 11 .
  • the cover 4 is disposed on the side of the packaging layer 3 away from the driving substrate 1 . In other embodiments, the display panel 100 may not include the cover 4 .
  • the encapsulation layer 3 may be a multi-layer structure or a single-layer structure.
  • the materials of each layer structure may be the same or different.
  • the encapsulation layer 3 may be resin or other organic materials.
  • the encapsulation layer includes a bonding layer (not shown) and a protective layer (not shown) covering the bonding layer.
  • the light-emitting unit 2 is an inorganic light-emitting diode, and the size of the inorganic light-emitting diode is less than or equal to 200 ⁇ m.
  • Inorganic light-emitting diodes can be micron light-emitting diodes (Micro-LED) or small light-emitting diodes (Mini-LED).
  • the size of Mini-LED is 50 ⁇ m ⁇ 200 ⁇ m, and the size of Micro-LED is less than 50 ⁇ m.
  • the driving substrate 1 can be a hard substrate or a flexible substrate. There are no excessive restrictions here and the design can be carried out according to actual needs.
  • FIG. 2 is a simplified structural diagram of a first embodiment of a driving substrate and a light-emitting unit provided by the present application.
  • the driving substrate 1 includes a substrate 11, a thin film transistor 12, a light shielding part 13, a common electrode 14, a first electrode 15, a second electrode 16 and a flat layer 17.
  • the thin film transistor 12 is disposed on the substrate 11 and is electrically connected to the light emitting unit 2 through the first electrode 15 .
  • the first electrode 15 is correspondingly connected to the anode 21 of the light-emitting unit 2
  • the second electrode 16 is correspondingly connected to the cathode 22 of the light-emitting unit 2 .
  • the light shielding portion 13 is provided outside and/or inside the thin film transistor 12 to block the lateral light emitted by the light emitting unit 2 toward the thin film transistor 12 and protect the thin film transistor 12 from being affected by light.
  • the flat layer 17 is provided on the side of the thin film transistor 12 and the light-shielding portion 13 away from the substrate 11 to facilitate the subsequent bonding of the light-emitting unit 2 and the driving substrate 1 .
  • the driving substrate 1 also includes a plurality of scanning lines (not shown), a plurality of data lines (not shown), a VDD signal line (not shown), and a VSS signal line (not shown).
  • the substrate 11 may be one or more of sapphire, quartz, silicon and silicon carbide, without excessive limitations here.
  • the substrate 11 may be a flexible film material or a rigid film material.
  • the substrate 11 is a rigid film material, specifically, the substrate 11 is transparent glass.
  • the thin film transistor 12 includes a gate electrode 121, a first insulating layer 122, an active layer 123, an ohmic contact layer 124 and an electrode layer 125 which are sequentially arranged on the substrate 11.
  • the electrode layer 125 includes a source electrode 1251 and a drain electrode 1252 arranged in the same layer.
  • the first insulating layer 122 is disposed on the side of the gate electrode 121 away from the substrate 11 and covers the entire substrate 11 .
  • the active layer 123 is disposed on a side of the first insulating layer 122 away from the substrate 11 and is disposed corresponding to the gate electrode 121 .
  • the electrode layer 125 is disposed on a side of the active layer 123 away from the substrate 11 .
  • the source electrode 1251 and the drain electrode 1252 in the electrode layer 125 are symmetrically disposed on opposite sides of the active layer 123 .
  • One end of the VDD signal line is connected to the driving circuit, the other end is connected to the source electrode 1251 , the drain electrode 1252 is connected to the first electrode 15 , and is electrically connected to the anode 21 of the light-emitting unit 2 through the first electrode 15 .
  • the light-emitting unit 2 is connected to the second electrode 16 and is electrically connected to the common electrode 14 through the second electrode 16 .
  • Two spaced and insulated ohmic contact layers 124 are provided between the electrode layer 125 and the active layer 123 .
  • the thin film transistor 12 may be a hydrogenated amorphous silicon (a-Si:H) TFT, a low-temperature polysilicon (low-temperature poly-Si, LTPS) TFT or an amorphous oxide (AOS) TFT. In this embodiment, the thin film transistor 12 is a hydrogenated amorphous silicon TFT.
  • the projection of the flat layer 17 on the substrate 11 covers the entire substrate 11 .
  • the side of the planarization layer 17 away from the substrate 11 is planarized.
  • a plurality of opening structures 171 are provided at intervals on the side of the flat layer 17 away from the substrate 11 .
  • the opening structures 171 penetrate the flat layer 17 , and the first electrode 15 and the second electrode 16 are respectively arranged in the opening structures 171 .
  • An opening structure 171 is provided with a first electrode 15 or a second electrode 16 correspondingly.
  • the flat layer 17 may be an anisotropic conductive adhesive film or other materials.
  • the light shielding part 13 includes a first light shielding part 131 , and the first light shielding part 131 includes a first light shielding top part 1311 .
  • the first light-shielding top 1311 is made of black insulating material.
  • the black insulating material can be one or more of Cr, CrOx and black resin, or other insulating materials with light-shielding effect.
  • the first light-shielding top 1311 is disposed on the side of the electrode layer 125 away from the substrate 11 , and the projection of the first light-shielding top 1311 on the substrate 11 covers the entire substrate 11 .
  • the flat layer 17 is disposed on the side of the first light-shielding top 1311 away from the substrate 11 , and the opening structure 171 penetrates the flat layer 17 and the first light-shielding top 1311 . Since the light-emitting direction of the light-emitting unit 2 is uncontrolled, there will be lateral light emitted in the direction of the driving substrate 1. After the lateral light irradiates the active layer 123 in the thin film transistor 12, the device of the thin film transistor 12 will be damaged. The characteristics change temporarily or permanently, thereby affecting the display quality of the display panel 100 . By providing the light shielding portion 13, the light directed to the active layer 123 can be blocked, thereby protecting the characteristics of the thin film transistor 12 from changing. This embodiment blocks all the light emitted from the light-emitting unit 2 to the driving substrate 1, thereby protecting the thin film transistor 12 from light.
  • Figure 3 is a simple structural schematic diagram of a second embodiment of a driving substrate and a light-emitting unit provided by the present application.
  • the structure of the second embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the first embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application.
  • the difference is that the driving substrate 1 also includes a second insulating layer. 18.
  • the first light-shielding top 1311 is disposed on the side of the second insulating layer 18 away from the substrate 11, and is disposed only corresponding to and covering the active layer 123.
  • the driving substrate 1 further includes a second insulating layer 18 , and the second insulating layer 18 is disposed on the side of the electrode layer 125 away from the substrate 11 .
  • the material of the second insulating layer 18 and the first insulating layer 122 may be the same or different, and are not limited here.
  • the opening structure 171 penetrates the flat layer 17 and the second insulating layer 18 .
  • the first light-shielding top 1311 is disposed on a side of the second insulating layer 18 away from the substrate 11 , and is disposed only corresponding to and covering the active layer 123 .
  • the orthographic projection of the first light-shielding top 1311 on the substrate 11 completely covers the orthographic projection of the active layer 123 on the substrate 11 to block the side light emitted from the light-emitting unit 2 that is directed toward the side of the active layer 123 away from the substrate 11 . To light.
  • Figure 4 is a simple structural schematic diagram of a third embodiment of a driving substrate and a light-emitting unit provided by this application.
  • Figure 5 is an embodiment of the first light-shielding side part and the active layer at A-A in Figure 4. Schematic diagram of cross-sectional structure.
  • the structure of the third embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the second embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application.
  • the difference is that the first light shielding part 131 also includes a first Light shielding sides 1312.
  • the first light-shielding side portion 1312 is located between the first light-shielding top portion 1311 and the electrode layer 125 , passes through the second insulating layer 18 and extends to the surface of the electrode layer 125 .
  • the first light-shielding side portion 1312 is a ring-shaped structure, and the projection of the active layer 123 on the second insulating layer 18 is located in the ring-shaped structure to block the lateral light emitted by the light-emitting unit 2 from passing through the electrode layer 125 or other components inside the driving substrate 1
  • the light reflected by the layer is directed toward the side of the active layer 123 away from the substrate 11 .
  • the first light-shielding top portion 1311 and the first light-shielding side portion 1312 are integrally formed structures, and both are made of black insulating material.
  • the first light-shielding part 131 can be made by a yellow light process after the thin film transistor 12 is produced, or can be made by other methods. There is no limitation here, and the design can be made according to actual needs.
  • the projection of the first light-shielding top portion 1311 on the second insulation layer 18 covers the first light-shielding side portion 1312 to better prepare the first light-shielding portion 131 .
  • the first light-shielding top portion 1311 and the first light-shielding side portion 1312 may not be an integrally formed structure.
  • the first light-shielding top part 1311 is made of black insulating material
  • the first light-shielding side part 1312 is made of metal.
  • the metal can reflect the light directed to the first light-shielding side part 1312 , thereby blocking the lateral light emitted by the light-emitting unit 2 through the electrode layer 125
  • the projection of the first light-shielding top 1311 on the second insulating layer 18 covers the first light-shielding side 1312 to prevent
  • the first light-shielding side portion 1312 is short-circuited with the first electrode 15 , which affects the good electrical connection between the light-emitting unit 2 and the driving substrate 1 .
  • Figure 6 is a simple structural schematic diagram of a fourth embodiment of a driving substrate and a light-emitting unit provided by this application.
  • Figure 7 is a cross-section of an embodiment of the second light shielding portion and the active layer at B-B in Figure 6. Schematic.
  • the structure of the fourth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the third embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application.
  • the difference is that the light-shielding part 13 also includes a second light-shielding part. 132.
  • the light shielding part 13 includes a first light shielding part 131 and a second light shielding part 132.
  • the first light shielding part 131 and the second light shielding part 132 are provided independently of each other.
  • the first light shielding part 131 includes a first light shielding top part 1311 and a first light shielding side part 1312.
  • the projection of the first light-shielding portion 131 on the substrate 11 only covers the active layer 123 to block the lateral light emitted by the light-emitting unit 2 toward the side of the active layer 123 away from the substrate 11 .
  • the second light-shielding portion 132 is located between the substrate 11 and the electrode layer 125 , at least partially overlaps the electrode layer 125 , is spaced apart from the active layer 123 , and passes through the first insulating layer 122 .
  • the number of the second light shielding portions 132 is two, and the two second light shielding portions 132 are respectively disposed on opposite sides of the active layer 123 along the direction from the source electrode 1251 to the drain electrode 1252; the two second light shielding portions 132
  • the orthographic projection on the first insulating layer 122 cooperates with the orthographic projection of the surrounding active layer 123 on the first insulating layer 122 to block the lateral light emitted by the light-emitting unit 2 from being reflected by the electrode layer 125 or other layers inside the driving substrate 1 The light is then emitted toward the side of the active layer 123 close to the substrate 11 .
  • One of the two second light-shielding portions 132 is disposed between the source electrode 1251 and the substrate 11 , passes through the first insulating layer 122 and extends to the substrate 11 , and the other is disposed correspondingly between the drain electrode 1252 and the substrate. 11 , passes through the first insulating layer 122 and extends to the substrate 11 .
  • the two second light shielding parts 132 are spaced apart and insulated.
  • the orthographic projection of the two second light-shielding portions 132 on the first insulating layer 122 matches the orthographic projection of the surrounding gate electrode 121 on the first insulating layer 122 , and the space between the second light-shielding portion 132 and the gate electrode 121 is filled with The first insulating layer 122 prevents the second light shielding portion 132 from short-circuiting the electrode layer 125 and the gate electrode 121 .
  • the shape and/or size of the two second light shielding parts 132 may be the same, or may be different in shape and size, as long as it is ensured that lateral light cannot pass between the two second light shielding parts 132 in a direction parallel to the substrate 11 It suffices to illuminate the active layer 123 through the gap between them.
  • the cross-sections of the two second light shielding portions 132 in the direction parallel to the substrate 11 are both U-shaped, but have different sizes.
  • the second light shielding part 132 and the electrode layer 125 are made of the same material and are connected to each other. That is to say, the second light shielding part 132 can be prepared together with the electrode layer 125, which can simplify the preparation process. It can be understood that the material of the second light shielding part 132 may also be different from the material of the electrode layer 125.
  • the second light shielding part 132 may be made of black insulating material.
  • the materials of the two light-shielding parts 13 may be the same or different, and they may be designed according to actual requirements.
  • the cross section of the second light shielding portion 132 may be an arc, an unclosed polygon, or other irregular shapes.
  • the embodiments of the present application only show some examples, which does not mean that the structures thereof are limited to this.
  • the wall thickness d of the second light shielding part 132 in the direction parallel to the substrate 11 is as large as possible, so that the gap between the second light shielding part 132 and the gate electrode 121 is as small as possible, thereby making the light emitting unit 2 emit light
  • the lateral light cannot be emitted to the side of the active layer 123 close to the substrate 11; and/or the second light shielding part 132 is parallel to
  • the wall thickness d in the direction of the substrate 11 is as large as possible, so that the gap between the second light shielding part 132 and the common electrode 14 is as small as possible, so that the lateral light emitted by the light-emitting unit 2 is reflected by the substrate 11
  • the reflected light cannot pass through the gap between the second light shielding part 132 and the gate electrode 121 , that is, the reflected light cannot irradiate the side of the active layer 123 close to the substrate 11 .
  • the second light shielding part 132 When the second light shielding part 132 is made of black insulating material, the second light shielding part 132 may be in contact with the gate electrode 121 and the common electrode 14 so that the wall thickness d of the second light shielding part 132 in the direction parallel to the substrate 11 is maximum.
  • the second light shielding part 132 is made of metal, due to process limitations and to prevent short circuits, the width of the gap between the second light shielding part 132 and the gate electrode 121 is not less than 1.5 ⁇ m, and the gap between the second light shielding part 132 and the common electrode 14 is not less than 1.5 ⁇ m. The gap width between them is not less than 1.5 ⁇ m.
  • the specific shape, size and material of the second light-shielding portion 132 can be set according to actual needs, and there is no specific limitation on this.
  • FIG. 8 is a simplified structural diagram of a fifth embodiment of a driving substrate and a light-emitting unit provided by the present application.
  • the structure of the fifth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the fourth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application.
  • the difference is that the light-shielding part 13 only includes a second light-shielding part. 132.
  • the light shielding part 13 only includes the second light shielding part 132 .
  • the drive substrate 1 does not include the second insulating layer 18 and the first light shielding portion 131 .
  • the light-shielding portion 13 of this embodiment can block the lateral light emitted by the light-emitting unit 2 and then reflected toward the side of the active layer 123 close to the substrate 11 .
  • Figure 9 is a simple structural schematic diagram of a sixth embodiment of a driving substrate and a light-emitting unit provided by the present application.
  • Figure 10 is a cross-section of an embodiment of the second light shielding portion and the active layer at C-C in Figure 9. Schematic.
  • the sixth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application has basically the same structure as the fifth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application.
  • the difference is that the light-shielding part 13 only includes a second light-shielding part. 132, and there are four second light shielding parts 132.
  • the number of the second light shielding parts 132 is four, and the four second light shielding parts 132 are insulated from each other and arranged at intervals.
  • the four second light-shielding parts 132 are respectively named first sub-light-shielding part 1321, second sub-light-shielding part 1322, third sub-light-shielding part 1323 and fourth sub-light-shielding part 1324.
  • the first sub-light shielding portion 1321 and the second sub-light shielding portion 1322 are respectively disposed between the source electrode 1251 and the substrate 11 , passing through the first insulating layer 122 and extending to the substrate 11 .
  • the third sub-light shielding portion 1323 and the fourth sub-light shielding portion 1324 are respectively disposed between the drain electrode 1252 and the substrate 11 , passing through the first insulating layer 122 and extending to the substrate 11 .
  • the orthographic projection of the second light-shielding portion 132 on the first insulating layer 122 of each group matches the orthographic projection of the surrounding gate electrode 121 on the first insulating layer 122 , and the second light-shielding portion 132 and the gate
  • the first insulating layer 122 is filled between the electrodes 121 .
  • the first sub-light shielding part 1321 and one of the third sub-light shielding part 1323 and the fourth sub-light shielding part 1324 form one group, and the other two second light-shielding parts 132 form another group.
  • the second sub-light shielding part 1322 and the third sub-light shielding part 1323 are arranged as close to the gate electrode 121 as possible.
  • the first sub-light shielding part 1321 and the fourth sub-light shielding part 1324 are arranged as far away from the gate electrode 121 as possible and as close as possible.
  • the common electrode 14 is provided, and the first sub-light-shielding portion 1321 and the fourth sub-light-shielding portion 1324 must overlap or be arranged tangentially to the electrode layer 125 so that the lateral light emitted by the light-emitting unit 2 cannot pass through the first sub-light-shielding portion 1321 and the electrode layer.
  • the gap between 125 and the gap between the fourth sub-light shielding part 1324 and the electrode layer 125 is illuminated to the substrate 11 .
  • the lateral light emitted by the light-emitting unit 2 can illuminate the substrate 11 at an angle different from the angle between the substrate 11 and the substrate 11 .
  • the angle between the light that the lateral light energy irradiates onto the substrate 11 and the substrate 11 is larger, so that in this embodiment, the lateral light energy irradiates the substrate 11.
  • the incident point a of the light on the side surface of the substrate 11 away from the second light shielding part 132 is further away from the gate electrode 121 , so that the lateral light emitted by the light emitting unit 2 and reflected by the substrate 11 cannot pass through the second sub-light shielding part.
  • the gap between the portion 1322 and the gate electrode 121 and the gap between the third sub-light shielding portion 1323 and the gate electrode 121 that is, the reflected light cannot irradiate the side of the active layer 123 close to the substrate 11 .
  • the second light shielding part 132 and the electrode layer 125 are made of the same material and are connected to each other, which can simplify the production process. In other embodiments, at least part of the second light-shielding portion 132 and the electrode layer 125 may be made of different materials.
  • the first sub-light-shielding portion 1321 and the fourth sub-light-shielding portion 1324 are made of black insulating material
  • the second sub-light-shielding portion 1322 and the fourth sub-light-shielding portion 1324 are made of black insulating material.
  • the third sub-light shielding portion 1323 is made of the same material as the electrode layer 125 .
  • the design method of the second light-shielding portion 132 in this embodiment is also applicable to other embodiments of the driving substrate 1 and the light-emitting unit 2 provided by the present application, and will not be described again here. Please refer to this embodiment. Example design.
  • Figure 11 is a simplified structural diagram of the seventh embodiment of the driving substrate and light-emitting unit provided by the present application.
  • Figure 12 is an implementation of the second light shielding portion and the active layer at D-D in Figure 11. Schematic diagram of the cross-sectional structure of the example.
  • the seventh embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application has basically the same structure as the fifth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application.
  • the difference is that the second light-shielding part 132 is made of black insulating material. , and in contact with the common electrode 14 and the gate electrode 121 .
  • the second light shielding part 132 is made of black insulating material and is in contact with the common electrode 14 and the gate electrode 121 .
  • the light-shielding principle of the second light-shielding portion 132 of this embodiment is the same as the light-shielding principle of the second light-shielding portion 132 of the sixth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application, and will not be described again here. Since the second light shielding portion 132 is made of black insulating material, the two second light shielding portions 132 can both be in contact with the common electrode 14 and the gate electrode 121 . Furthermore, the two light shielding portions 132 can be arranged as shown in FIG. 7 .
  • the two light shielding parts 132 may also form a closed figure, and the two second light shielding parts 132 may also be an integrally formed structure.
  • the two second light-shielding portions 132 are respectively provided corresponding to the electrode layers and contact each other to form an integral annular structure, so that the lateral light emitted by the light-emitting unit 2 and reflected by the substrate 11 cannot After passing through the gap between the second light shielding portion 132 and the gate electrode 121 , that is, the reflected light cannot irradiate the side of the active layer 123 close to the substrate 11 .
  • the second light shielding part 132 may have an irregular pattern, which is not limited here.
  • the driving substrate 1 is used to drive an inorganic light-emitting diode to emit light.
  • the driving substrate 1 includes a substrate 11 and a first insulating layer 122, an active layer 123 and an electrode layer sequentially arranged on the substrate 11.
  • the electrode layer 125 includes a source electrode 1251 and a drain electrode 1252 arranged in the same layer; it also includes a light shielding portion 13, the light shielding portion 13 is located between the electrode layer 125 and the substrate 11, and at least partially overlaps the electrode layer 125 , and is spaced apart from the active layer 123 and passes through the first insulating layer 122; and/or the light shielding portion 13 is at least partially located on the side of the electrode layer 125 away from the substrate 11 and covers the active layer 123.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present application provides a display panel (100) and a drivr substrate (1) thereof. The drive substrate (1) is used for driving an inorganic light-emitting diode to emit light. The drive substrate (1) comprises a substrate (11) as well as a first insulating layer (122), an active layer (123), and an electrode layer (125) which are sequentially arranged on the substrate (11). The electrode layer (125) comprises a source electrode (1251) and a drain electrode (1252) which are arranged in the same layer. A light shielding portion is further comprised. The light shielding portion (13) is located between the electrode layer (125) and the substrate (11) and at least partially overlaps with the electrode layer (125). The light shielding portion (13) is spaced apart from the active layer (123) and penetrates the first insulating layer (122); and/or the light shielding portion (13) is at least partially located on the side of the electrode layer (125) away from the substrate (11) and covers the active layer (123). By means of arranging the light shielding portion (13) around the active layer (123) to shield from light emitted towards the active layer (123), the active layer (123) in the drive substrate (1) is prevented from being illuminated and thus causing changes in the characteristics of a thin film transistor (12).

Description

显示面板及其驱动基板Display panel and its driving substrate
相关申请的交叉引用Cross-references to related applications
本申请要求2022年08月23日提交的中国专利申请202211014947.9的优先权,其全部内容通过引用并入本文。This application claims priority from Chinese patent application 202211014947.9 submitted on August 23, 2022, the entire content of which is incorporated herein by reference.
技术领域Technical field
本申请涉及显示技术领域,特别是涉及一种显示面板及其驱动基板。The present application relates to the field of display technology, and in particular to a display panel and its driving substrate.
背景技术Background technique
无机微发光二极管(Micro Light Emitting Diode,Micro LED)显示器是当今显示器研究领域的热点之一,与OLED(OrganicLight-Emitting Diode,有机发光二极管)显示器相比,Micro LED具有信赖性高、功耗低、亮度高及响应速度快等优点。其中,用于控制LED发光的驱动基板设计是Micro LED显示器的核心技术内容,具有重要的研究意义。然而,由于LED的发光方向是不受控制的,其会有射向驱动基板方向的侧向光,这个光会造成驱动基板中TFT(Thin Film Transistor,薄膜晶体管)器件的特性发生暂时或者永久的变化,从而影响显示品质。通常的做法是在LED转移制程后,在上一层封装的黑胶以解决以上问题,但封黑胶对LED的亮度造成巨量的衰减,而需要降低这种衰减时,需要采用的制程繁琐,且会造成LED的损伤,影响转移良率,因此亟需另一种更便捷的方法来解决该问题。Inorganic Micro Light Emitting Diode (Micro LED) displays are one of the hot spots in the field of display research today. Compared with OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) displays, Micro LEDs have high reliability and low power consumption. , high brightness and fast response speed. Among them, the design of the drive substrate used to control LED light emission is the core technical content of Micro LED displays and has important research significance. However, since the light-emitting direction of the LED is uncontrolled, there will be lateral light emitted in the direction of the driving substrate. This light will cause temporary or permanent changes in the characteristics of the TFT (Thin Film Transistor) device in the driving substrate. changes, thereby affecting display quality. The usual approach is to add a layer of encapsulated black glue after the LED transfer process to solve the above problems. However, the black glue causes a huge attenuation of the brightness of the LED. When it is necessary to reduce this attenuation, the process that needs to be adopted is cumbersome. , and will cause damage to the LED and affect the transfer yield. Therefore, another more convenient method is urgently needed to solve this problem.
发明内容Contents of the invention
本申请主要解决的技术问题是提供一种显示面板及其驱动基板,解决现有技术中LED射向驱动基板方向的侧向光造成驱动基板中薄膜晶体管器件的特性发生暂时或者永久的变化的问题。The main technical problem to be solved by this application is to provide a display panel and its driving substrate to solve the problem in the prior art that the lateral light emitted by the LED towards the driving substrate causes temporary or permanent changes in the characteristics of the thin film transistor device in the driving substrate. .
为了解决上述技术问题,本申请提供的第一个技术方案为:提供一种驱动基板,用于驱动无机发光二极管发光,驱动基板包括:In order to solve the above technical problems, the first technical solution provided by this application is to provide a driving substrate for driving inorganic light-emitting diodes to emit light. The driving substrate includes:
衬底;substrate;
依次设置于衬底上的栅极、第一绝缘层、有源层和电极层;电极层包括同层设置的源极电极与漏极电极;The gate electrode, the first insulating layer, the active layer and the electrode layer are arranged on the substrate in sequence; the electrode layer includes a source electrode and a drain electrode arranged on the same layer;
其中,还包括遮光部,遮光部位于电极层与衬底之间,且与电极层至少部分重叠,以及与有源层间隔设置,并穿过第一绝缘层;和/或,遮光部至少部分位于电极层远离衬底的一侧且覆盖有源层。The method also includes a light-shielding portion, which is located between the electrode layer and the substrate, at least partially overlaps with the electrode layer, is spaced apart from the active layer, and passes through the first insulating layer; and/or the light-shielding portion is at least partially overlapped with the electrode layer. It is located on the side of the electrode layer away from the substrate and covers the active layer.
其中,遮光部包括第一遮光部,第一遮光部至少部分位于电极层远离衬底的一侧且覆盖有源层。Wherein, the light-shielding part includes a first light-shielding part, which is at least partially located on a side of the electrode layer away from the substrate and covers the active layer.
其中,遮光部还包括第二遮光部,第二遮光部位于衬底与电极层之间,且穿过第一绝缘层。Wherein, the light shielding part further includes a second light shielding part, the second light shielding part is located between the substrate and the electrode layer and passes through the first insulating layer.
其中,第一遮光部与第二遮光部相互独立设置;第二遮光部与电极层的材质相同,且相互连接。Wherein, the first light-shielding part and the second light-shielding part are provided independently of each other; the second light-shielding part and the electrode layer are made of the same material and are connected to each other.
其中,第二遮光部的数量为二,两个第二遮光部沿着从源极电极到漏极电极的方向分别设置于有源层的相对两侧;两个第二遮光部在第一绝缘层上的正投影配合围设有源层在第一绝缘层上的正投影。Wherein, the number of the second light-shielding parts is two, and the two second light-shielding parts are respectively arranged on opposite sides of the active layer along the direction from the source electrode to the drain electrode; the two second light-shielding parts are located on the first insulation The orthographic projection on the layer matches the orthographic projection of the surrounding active layer on the first insulating layer.
其中,还包括第二绝缘层,第二绝缘层设置于电极层远离衬底的一侧;第一遮光部包括第一遮光顶部,第一遮光顶部设置于第二绝缘层远离衬底的一侧,且仅对应有源层设置并覆盖有源层。It also includes a second insulating layer, the second insulating layer is disposed on the side of the electrode layer away from the substrate; the first light-shielding part includes a first light-shielding top, and the first light-shielding top is disposed on the side of the second insulating layer away from the substrate. , and only corresponds to the active layer setting and covers the active layer.
其中,第一遮光部还包括第一遮光侧部,第一遮光侧部位于第一遮光顶部与电极层之间,且穿过第二绝缘层并延伸至电极层表面。Wherein, the first light-shielding part further includes a first light-shielding side part, the first light-shielding side part is located between the first light-shielding top and the electrode layer, and passes through the second insulating layer and extends to the surface of the electrode layer.
其中,第一遮光侧部为环状结构,有源层在第二绝缘层上的投影位于环状结构内。Wherein, the first light-shielding side part is a ring-shaped structure, and the projection of the active layer on the second insulation layer is located within the ring-shaped structure.
其中,第一遮光顶部与第一遮光侧部为一体成型结构,且采用黑色绝缘材料。Among them, the first light-shielding top part and the first light-shielding side part have an integrally formed structure and are made of black insulating material.
为了解决上述技术问题,本申请提供的第二个技术方案为:提供一种显示面板,显示面包括驱动基板和多个无机发光二极管,驱动基板为上述的驱动基板。In order to solve the above technical problems, the second technical solution provided by this application is to provide a display panel. The display surface includes a driving substrate and a plurality of inorganic light-emitting diodes. The driving substrate is the above-mentioned driving substrate.
本申请的有益效果:区别于现有技术,本申请提供了一种显示面板及其驱动基板,驱动基板用于驱动无机发光二极管发光,驱动基板包括衬底以及依次设置于衬底上的第一绝缘层、有源层和电极层;电极层包括同层设置的源极电极与漏极电极;其中,还包括遮光部,遮光部位于电极层与衬底之间,且与电极层至少部分重叠,以及与有源层间隔设置,并穿过第一绝缘层;和/或,遮光部至少部分位于电极层远离衬底的一侧且覆盖有源层。通过在有源层的周围设置遮光部,遮挡射向有源层的光,避免驱动基板中的有源层受到光照而使薄膜晶体管的特性发生变化。Beneficial effects of the present application: Different from the existing technology, this application provides a display panel and a driving substrate thereof. The driving substrate is used to drive an inorganic light-emitting diode to emit light. The driving substrate includes a substrate and a first first electrode arranged sequentially on the substrate. Insulating layer, active layer and electrode layer; the electrode layer includes a source electrode and a drain electrode arranged in the same layer; it also includes a light-shielding portion, the light-shielding portion is located between the electrode layer and the substrate, and at least partially overlaps with the electrode layer , and is spaced apart from the active layer and passes through the first insulating layer; and/or the light-shielding portion is at least partially located on a side of the electrode layer away from the substrate and covers the active layer. By providing a light-shielding portion around the active layer, the light directed to the active layer is blocked, thereby preventing the active layer in the driving substrate from being exposed to light and causing changes in the characteristics of the thin film transistor.
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出任何创造性劳动的前提下,还可以根据这些附图获得其它的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without making any creative efforts.
图1是本申请提供的显示面板一实施例的结构示意图;Figure 1 is a schematic structural diagram of an embodiment of a display panel provided by this application;
图2是本申请提供的驱动基板与发光单元第一实施例的简易结构示意图;Figure 2 is a simple structural schematic diagram of the first embodiment of the driving substrate and light-emitting unit provided by this application;
图3是本申请提供的驱动基板与发光单元第二实施例的简易结构示意图;Figure 3 is a simple structural schematic diagram of a second embodiment of a driving substrate and a light-emitting unit provided by this application;
图4是本申请提供的驱动基板与发光单元第三实施例的简易结构示意图;Figure 4 is a simple structural schematic diagram of a third embodiment of a driving substrate and a light-emitting unit provided by this application;
图5是图4中A-A处第一遮光侧部与有源层一实施例的剖面结构示意图;Figure 5 is a schematic cross-sectional structural diagram of an embodiment of the first light-shielding side part and the active layer at A-A in Figure 4;
图6是本申请提供的驱动基板与发光单元第四实施例的简易结构示意图;Figure 6 is a simple structural schematic diagram of a fourth embodiment of a driving substrate and a light-emitting unit provided by this application;
图7是图6中B-B处第二遮光部与有源层一实施例的剖面结构示意图;Figure 7 is a schematic cross-sectional structural diagram of an embodiment of the second light shielding portion and the active layer at B-B in Figure 6;
图8是本申请提供的驱动基板与发光单元第五实施例的简易结构示意图;Figure 8 is a simple structural schematic diagram of the fifth embodiment of the driving substrate and light-emitting unit provided by the present application;
图9是本申请提供的驱动基板与发光单元第六实施例的简易结构示意图;Figure 9 is a simple structural schematic diagram of the sixth embodiment of the driving substrate and light-emitting unit provided by this application;
图10是图9中C-C处第二遮光部与有源层一实施例的剖面结构示意图;Figure 10 is a schematic cross-sectional structural diagram of an embodiment of the second light shielding portion and the active layer at C-C in Figure 9;
图11是本申请提供的驱动基板与发光单元第七实施例的简易结构示意图;Figure 11 is a simple structural schematic diagram of the seventh embodiment of the driving substrate and light-emitting unit provided by the present application;
图12是图11中D-D处第二遮光部与有源层一实施例的剖面结构示意图。FIG. 12 is a schematic cross-sectional structural diagram of an embodiment of the second light shielding portion and the active layer at D-D in FIG. 11 .
附图标号说明:Explanation of reference numbers:
驱动基板-1、衬底-11、薄膜晶体管-12、栅极电极-121、第一绝缘层-122、有源层-123、欧姆接触层-124、电极层-125、源极电极-1251、漏极电极-1252、遮光部-13、第一遮光部-131、第一遮光顶部-1311、第一遮光侧部-1312、第二遮光部-132、第一子遮光部-1321、第二子遮光部-1322、第三子遮光部-1323、第四子遮光部-1324、入射点-a、壁厚-d、公共电极-14、第一电极-15、第二电极-16、平坦层-17、开口结构-171、第二绝缘层-18、发光单元-2、阳极-21、阴极-22、封装层-3、盖板-4、显示面板-100。Driving substrate-1, substrate-11, thin film transistor-12, gate electrode-121, first insulating layer-122, active layer-123, ohmic contact layer-124, electrode layer-125, source electrode-1251 , drain electrode-1252, light-shielding part-13, first light-shielding part-131, first light-shielding top part-1311, first light-shielding side part-1312, second light-shielding part-132, first sub-light-shielding part-1321, Second sub-light shielding part-1322, third sub-light shielding part-1323, fourth sub-light shielding part-1324, incident point-a, wall thickness-d, common electrode-14, first electrode-15, second electrode-16, Flat layer-17, opening structure-171, second insulating layer-18, light-emitting unit-2, anode-21, cathode-22, packaging layer-3, cover plate-4, display panel-100.
具体实施方式Detailed ways
下面结合说明书附图,对本申请实施例的方案进行详细说明。The solutions of the embodiments of the present application will be described in detail below with reference to the accompanying drawings.
以下描述中,为了说明而不是为了限定,提出了诸如特定系统结构、接口、技术之类的具体细节,以便透彻理解本申请。In the following description, specific details such as specific system structures, interfaces, technologies, etc. are provided for the purpose of explanation and not limitation, so as to provide a thorough understanding of the present application.
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.
本申请中的术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征 的数量。由此,限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。此外,术语“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元,而是还包括没有列出的步骤或单元,或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first", "second" and "third" in this application are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, features defined as "first", "second", and "third" may explicitly or implicitly include at least one of these features. In the description of this application, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically limited. All directional indications (such as up, down, left, right, front, back...) in the embodiments of this application are only used to explain the relative positional relationship between components in a specific posture (as shown in the drawings). , sports conditions, etc., if the specific posture changes, the directional indication will also change accordingly. Furthermore, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but also includes unlisted steps or units, or alternatively includes steps or units for these processes. , other steps or units inherent to a method, product or device.
在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。Reference herein to "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearances of this phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those skilled in the art understand, both explicitly and implicitly, that the embodiments described herein may be combined with other embodiments.
请参阅图1,图1是本申请提供的显示面板一实施例的结构示意图。Please refer to FIG. 1 , which is a schematic structural diagram of an embodiment of a display panel provided by the present application.
本申请提供一种显示面板100,显示面板100包括驱动基板1、多个发光单元2、封装层3和盖板4。驱动基板1用于驱动发光单元2发光。多个发光单元2间隔设置于驱动基板1的一侧,封装层3设置于驱动基板1的一侧,且封装层3环绕发光单元2并填充发光单元2之间的间隙,同时覆盖发光单元2远离衬底11的一侧。盖板4设置于封装层3远离驱动基板1的一侧。在其他实施例中,显示面板100也可以不包括盖板4。This application provides a display panel 100 . The display panel 100 includes a driving substrate 1 , a plurality of light-emitting units 2 , an encapsulation layer 3 and a cover plate 4 . The driving substrate 1 is used to drive the light emitting unit 2 to emit light. A plurality of light-emitting units 2 are arranged at intervals on one side of the driving substrate 1 . The encapsulating layer 3 is arranged on one side of the driving substrate 1 . The encapsulating layer 3 surrounds the light-emitting units 2 and fills the gaps between the light-emitting units 2 while covering the light-emitting units 2 . the side away from the substrate 11 . The cover 4 is disposed on the side of the packaging layer 3 away from the driving substrate 1 . In other embodiments, the display panel 100 may not include the cover 4 .
封装层3可以是多层结构也可以是单层结构。封装层3为多层结构时,各层结构的材料可以相同,也可以不同。封装层3可以是树脂,也可以是其他有机材料。对发光单元2进行封装,可以实现发光单元2远离衬底11的一侧平坦化,同时还能防止多个发光单元2之间的光干扰。在本实施例中,封装层包括键合层(图未示)和覆盖键合层的保护层(图 未示)。The encapsulation layer 3 may be a multi-layer structure or a single-layer structure. When the encapsulation layer 3 has a multi-layer structure, the materials of each layer structure may be the same or different. The encapsulation layer 3 may be resin or other organic materials. By encapsulating the light-emitting unit 2, the side of the light-emitting unit 2 away from the substrate 11 can be flattened, and at the same time, light interference between multiple light-emitting units 2 can be prevented. In this embodiment, the encapsulation layer includes a bonding layer (not shown) and a protective layer (not shown) covering the bonding layer.
发光单元2为无机发光二极管,无机发光二极管的尺寸小于等于200μm。无机发光二极管可以为微米发光二极管(Micro-LED)或小型发光二极管(Mini-LED),Mini-LED的尺寸为50μm~200μm,Micro-LED的尺寸小于50μm。The light-emitting unit 2 is an inorganic light-emitting diode, and the size of the inorganic light-emitting diode is less than or equal to 200 μm. Inorganic light-emitting diodes can be micron light-emitting diodes (Micro-LED) or small light-emitting diodes (Mini-LED). The size of Mini-LED is 50 μm ~ 200 μm, and the size of Micro-LED is less than 50 μm.
驱动基板1可以是硬质基板,也可以是柔性基板,此处不作过多限制,根据实际需求进行设计。The driving substrate 1 can be a hard substrate or a flexible substrate. There are no excessive restrictions here and the design can be carried out according to actual needs.
请参阅图2,图2是本申请提供的驱动基板与发光单元第一实施例的简易结构示意图。Please refer to FIG. 2 , which is a simplified structural diagram of a first embodiment of a driving substrate and a light-emitting unit provided by the present application.
本申请提供一种驱动基板1,驱动基板1包括衬底11、薄膜晶体管12、遮光部13、公共电极14、第一电极15、第二电极16和平坦层17。薄膜晶体管12设置于衬底11上,与发光单元2通过第一电极15进行电连接。第一电极15对应连接发光单元2的阳极21,第二电极16对应连接发光单元2的阴极22。遮光部13设置于薄膜晶体管12外部和/或内部,用于遮挡发光单元2射向薄膜晶体管12的侧向光,保护薄膜晶体管12不受光照的影响。平坦层17设置于薄膜晶体管12和遮光部13远离衬底11的一侧,便于后续发光单元2与驱动基板1的键合。驱动基板1还包括多个扫描线(图未示)、多个数据线(图未示)、VDD信号线(图未示)、VSS信号线(图未示)。This application provides a driving substrate 1. The driving substrate 1 includes a substrate 11, a thin film transistor 12, a light shielding part 13, a common electrode 14, a first electrode 15, a second electrode 16 and a flat layer 17. The thin film transistor 12 is disposed on the substrate 11 and is electrically connected to the light emitting unit 2 through the first electrode 15 . The first electrode 15 is correspondingly connected to the anode 21 of the light-emitting unit 2 , and the second electrode 16 is correspondingly connected to the cathode 22 of the light-emitting unit 2 . The light shielding portion 13 is provided outside and/or inside the thin film transistor 12 to block the lateral light emitted by the light emitting unit 2 toward the thin film transistor 12 and protect the thin film transistor 12 from being affected by light. The flat layer 17 is provided on the side of the thin film transistor 12 and the light-shielding portion 13 away from the substrate 11 to facilitate the subsequent bonding of the light-emitting unit 2 and the driving substrate 1 . The driving substrate 1 also includes a plurality of scanning lines (not shown), a plurality of data lines (not shown), a VDD signal line (not shown), and a VSS signal line (not shown).
衬底11可以为蓝宝石、石英、硅和碳化硅中的一种或多种,此处不作过多限制。衬底11可以是柔性膜材,也可以是硬性膜材。在本实施例中,衬底11为硬性膜材,具体地,衬底11为透明玻璃。The substrate 11 may be one or more of sapphire, quartz, silicon and silicon carbide, without excessive limitations here. The substrate 11 may be a flexible film material or a rigid film material. In this embodiment, the substrate 11 is a rigid film material, specifically, the substrate 11 is transparent glass.
薄膜晶体管12包括依次设置于衬底11上的栅极电极121、第一绝缘层122、有源层123、欧姆接触层124和电极层125。电极层125包括同层设置的源极电极1251与漏极电极1252。第一绝缘层122设置于栅极电极121远离衬底11的一侧,且覆盖整个衬底11。有源层123设置于第一绝缘层122远离衬底11的一侧,且对应栅极电极121设置。电极层125设置于有源层123远离衬底11的一侧,电极层125中的源极电极1251和漏极电极1252分别对称设置于有源层123的相对两侧。VDD 信号线的一端连接驱动电路,另一端连接源极电极1251,漏极电极1252连接第一电极15,且通过第一电极15与发光单元2的阳极21电连接。发光单元2与第二电极16连接,并通过第二电极16与公共电极14实现电连接。电极层125与有源层123之间设置有两个间隔且绝缘设置的欧姆接触层124。一个欧姆接触层124对应设置于源极电极1251与有源层123之间,另一个欧姆接触层124对应设置于漏极电极1252层125与有源层123之间。薄膜晶体管12可以为氢化非晶硅(a-Si:H)TFT、低温多晶硅(low-temperature poly-Si,LTPS)TFT或非晶氧化物(AOS)TFT。在本实施例中,薄膜晶体管12为氢化非晶硅TFT。The thin film transistor 12 includes a gate electrode 121, a first insulating layer 122, an active layer 123, an ohmic contact layer 124 and an electrode layer 125 which are sequentially arranged on the substrate 11. The electrode layer 125 includes a source electrode 1251 and a drain electrode 1252 arranged in the same layer. The first insulating layer 122 is disposed on the side of the gate electrode 121 away from the substrate 11 and covers the entire substrate 11 . The active layer 123 is disposed on a side of the first insulating layer 122 away from the substrate 11 and is disposed corresponding to the gate electrode 121 . The electrode layer 125 is disposed on a side of the active layer 123 away from the substrate 11 . The source electrode 1251 and the drain electrode 1252 in the electrode layer 125 are symmetrically disposed on opposite sides of the active layer 123 . One end of the VDD signal line is connected to the driving circuit, the other end is connected to the source electrode 1251 , the drain electrode 1252 is connected to the first electrode 15 , and is electrically connected to the anode 21 of the light-emitting unit 2 through the first electrode 15 . The light-emitting unit 2 is connected to the second electrode 16 and is electrically connected to the common electrode 14 through the second electrode 16 . Two spaced and insulated ohmic contact layers 124 are provided between the electrode layer 125 and the active layer 123 . One ohmic contact layer 124 is disposed between the source electrode 1251 and the active layer 123 , and the other ohmic contact layer 124 is disposed between the drain electrode 1252 layer 125 and the active layer 123 . The thin film transistor 12 may be a hydrogenated amorphous silicon (a-Si:H) TFT, a low-temperature polysilicon (low-temperature poly-Si, LTPS) TFT or an amorphous oxide (AOS) TFT. In this embodiment, the thin film transistor 12 is a hydrogenated amorphous silicon TFT.
平坦层17在衬底11上的投影覆盖整个衬底11。平坦层17远离衬底11的一侧平坦化。平坦层17远离衬底11的一侧设置有多个间隔设置的开口结构171,开口结构171贯穿平坦层17,第一电极15和第二电极16分别设置于开口结构171内。一个开口结构171对应设置一个第一电极15或一个第二电极16。平坦层17可以是异方性导电胶膜,也可以是其他材料。The projection of the flat layer 17 on the substrate 11 covers the entire substrate 11 . The side of the planarization layer 17 away from the substrate 11 is planarized. A plurality of opening structures 171 are provided at intervals on the side of the flat layer 17 away from the substrate 11 . The opening structures 171 penetrate the flat layer 17 , and the first electrode 15 and the second electrode 16 are respectively arranged in the opening structures 171 . An opening structure 171 is provided with a first electrode 15 or a second electrode 16 correspondingly. The flat layer 17 may be an anisotropic conductive adhesive film or other materials.
遮光部13包括第一遮光部131,第一遮光部131包括第一遮光顶部1311。第一遮光顶部1311为黑色绝缘材料,黑色绝缘材料可以是Cr、CrOx和黑色树脂中的一种或多种,也可以是其他具有遮光作用的绝缘材料。第一遮光顶部1311设置于电极层125远离衬底11的一侧,且第一遮光顶部1311在衬底11上的投影覆盖整个衬底11。平坦层17设置于第一遮光顶部1311远离衬底11的一侧,开口结构171贯穿平坦层17和第一遮光顶部1311。由于发光单元2的发光方向是不受控制的,其会有射向驱动基板1方向的侧向光,该侧向光照射到薄膜晶体管12中的有源层123之后,会造成薄膜晶体管12器件特性发生暂时或者永久的变化,从而影响显示面板100的显示品质。通过设置遮光部13可以遮挡射向有源层123的光,从而保护薄膜晶体管12的特性不变化。本实施例遮挡了发光单元2射向驱动基板1的所有光,进而保护薄膜晶体管12不受光照。The light shielding part 13 includes a first light shielding part 131 , and the first light shielding part 131 includes a first light shielding top part 1311 . The first light-shielding top 1311 is made of black insulating material. The black insulating material can be one or more of Cr, CrOx and black resin, or other insulating materials with light-shielding effect. The first light-shielding top 1311 is disposed on the side of the electrode layer 125 away from the substrate 11 , and the projection of the first light-shielding top 1311 on the substrate 11 covers the entire substrate 11 . The flat layer 17 is disposed on the side of the first light-shielding top 1311 away from the substrate 11 , and the opening structure 171 penetrates the flat layer 17 and the first light-shielding top 1311 . Since the light-emitting direction of the light-emitting unit 2 is uncontrolled, there will be lateral light emitted in the direction of the driving substrate 1. After the lateral light irradiates the active layer 123 in the thin film transistor 12, the device of the thin film transistor 12 will be damaged. The characteristics change temporarily or permanently, thereby affecting the display quality of the display panel 100 . By providing the light shielding portion 13, the light directed to the active layer 123 can be blocked, thereby protecting the characteristics of the thin film transistor 12 from changing. This embodiment blocks all the light emitted from the light-emitting unit 2 to the driving substrate 1, thereby protecting the thin film transistor 12 from light.
请参阅图3,图3是本申请提供的驱动基板与发光单元第二实施例 的简易结构示意图。Please refer to Figure 3. Figure 3 is a simple structural schematic diagram of a second embodiment of a driving substrate and a light-emitting unit provided by the present application.
本申请提供的驱动基板1与发光单元2第二实施例与本申请提供的驱动基板1与发光单元2第一实施例的结构基本相同,不同之处在于:驱动基板1还包括第二绝缘层18,第一遮光顶部1311设置于第二绝缘层18远离衬底11的一侧,且仅对应有源层123设置并覆盖有源层123。The structure of the second embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the first embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application. The difference is that the driving substrate 1 also includes a second insulating layer. 18. The first light-shielding top 1311 is disposed on the side of the second insulating layer 18 away from the substrate 11, and is disposed only corresponding to and covering the active layer 123.
在本实施例中,驱动基板1还包括第二绝缘层18,第二绝缘层18设置于电极层125远离衬底11的一侧。第二绝缘层18的材料与第一绝缘层122的材料可以相同,也可以不同,此处不作限制。开口结构171贯穿平坦层17和第二绝缘层18。第一遮光顶部1311设置于第二绝缘层18远离衬底11的一侧,且仅对应有源层123设置并覆盖有源层123。即,第一遮光顶部1311在衬底11上的正投影完全覆盖有源层123在衬底11的正投影,以遮挡射向有源层123远离衬底11一侧的发光单元2发出的侧向光。In this embodiment, the driving substrate 1 further includes a second insulating layer 18 , and the second insulating layer 18 is disposed on the side of the electrode layer 125 away from the substrate 11 . The material of the second insulating layer 18 and the first insulating layer 122 may be the same or different, and are not limited here. The opening structure 171 penetrates the flat layer 17 and the second insulating layer 18 . The first light-shielding top 1311 is disposed on a side of the second insulating layer 18 away from the substrate 11 , and is disposed only corresponding to and covering the active layer 123 . That is, the orthographic projection of the first light-shielding top 1311 on the substrate 11 completely covers the orthographic projection of the active layer 123 on the substrate 11 to block the side light emitted from the light-emitting unit 2 that is directed toward the side of the active layer 123 away from the substrate 11 . To light.
请参阅图4和图5,图4是本申请提供的驱动基板与发光单元第三实施例的简易结构示意图,图5是图4中A-A处第一遮光侧部与有源层一实施例的剖面结构示意图。Please refer to Figures 4 and 5. Figure 4 is a simple structural schematic diagram of a third embodiment of a driving substrate and a light-emitting unit provided by this application. Figure 5 is an embodiment of the first light-shielding side part and the active layer at A-A in Figure 4. Schematic diagram of cross-sectional structure.
本申请提供的驱动基板1与发光单元2第三实施例与本申请提供的驱动基板1与发光单元2第二实施例的结构基本相同,不同之处在于:第一遮光部131还包括第一遮光侧部1312。The structure of the third embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the second embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application. The difference is that the first light shielding part 131 also includes a first Light shielding sides 1312.
第一遮光侧部1312位于第一遮光顶部1311与电极层125之间,且穿过第二绝缘层18并延伸至电极层125表面。第一遮光侧部1312为环状结构,有源层123在第二绝缘层18上的投影位于环状结构内,以遮挡发光单元2发出的侧向光经电极层125或驱动基板1内部其他层反射后射向有源层123远离衬底11的一侧的光。在本实施例中,第一遮光顶部1311与第一遮光侧部1312为一体成型结构,且均采用黑色绝缘材料。第一遮光部131可以是在制作完成薄膜晶体管12后,通过黄光工艺制成,也可以通过其他方法制成,此处不做限制,根据实际需求进行设计。第一遮光顶部1311在第二绝缘层18上的投影覆盖第一遮光侧部1312,以便于更好地制备第一遮光部131。在其他实施例中,第一遮光 顶部1311和第一遮光侧部1312也可以不是一体成型结构。例如,第一遮光顶部1311采用黑色绝缘材料,第一遮光侧部1312采用金属,金属可以反射射向第一遮光侧部1312的光,从而达到遮挡发光单元2发出的侧向光经电极层125或驱动基板1内部其他层反射后射向有源层123远离衬底11的一侧的光的目的,第一遮光顶部1311在第二绝缘层18上的投影覆盖第一遮光侧部1312,防止第一遮光侧部1312与第一电极15短接,影响发光单元2与驱动基板1的良好电性连接。The first light-shielding side portion 1312 is located between the first light-shielding top portion 1311 and the electrode layer 125 , passes through the second insulating layer 18 and extends to the surface of the electrode layer 125 . The first light-shielding side portion 1312 is a ring-shaped structure, and the projection of the active layer 123 on the second insulating layer 18 is located in the ring-shaped structure to block the lateral light emitted by the light-emitting unit 2 from passing through the electrode layer 125 or other components inside the driving substrate 1 The light reflected by the layer is directed toward the side of the active layer 123 away from the substrate 11 . In this embodiment, the first light-shielding top portion 1311 and the first light-shielding side portion 1312 are integrally formed structures, and both are made of black insulating material. The first light-shielding part 131 can be made by a yellow light process after the thin film transistor 12 is produced, or can be made by other methods. There is no limitation here, and the design can be made according to actual needs. The projection of the first light-shielding top portion 1311 on the second insulation layer 18 covers the first light-shielding side portion 1312 to better prepare the first light-shielding portion 131 . In other embodiments, the first light-shielding top portion 1311 and the first light-shielding side portion 1312 may not be an integrally formed structure. For example, the first light-shielding top part 1311 is made of black insulating material, and the first light-shielding side part 1312 is made of metal. The metal can reflect the light directed to the first light-shielding side part 1312 , thereby blocking the lateral light emitted by the light-emitting unit 2 through the electrode layer 125 Or for the purpose of driving the light reflected by other layers inside the substrate 1 and emitted to the side of the active layer 123 away from the substrate 11 , the projection of the first light-shielding top 1311 on the second insulating layer 18 covers the first light-shielding side 1312 to prevent The first light-shielding side portion 1312 is short-circuited with the first electrode 15 , which affects the good electrical connection between the light-emitting unit 2 and the driving substrate 1 .
请参阅图6和图7,图6是本申请提供的驱动基板与发光单元第四实施例的简易结构示意图,图7是图6中B-B处第二遮光部与有源层一实施例的剖面结构示意图。Please refer to Figures 6 and 7. Figure 6 is a simple structural schematic diagram of a fourth embodiment of a driving substrate and a light-emitting unit provided by this application. Figure 7 is a cross-section of an embodiment of the second light shielding portion and the active layer at B-B in Figure 6. Schematic.
本申请提供的驱动基板1与发光单元2第四实施例与本申请提供的驱动基板1与发光单元2第三实施例的结构基本相同,不同之处在于:遮光部13还包括第二遮光部132。The structure of the fourth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the third embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application. The difference is that the light-shielding part 13 also includes a second light-shielding part. 132.
在本实施例中,遮光部13包括第一遮光部131和第二遮光部132,第一遮光部131和第二遮光部132相互独立设置。第一遮光部131包括第一遮光顶部1311和第一遮光侧部1312。第一遮光部131在衬底11上的投影仅覆盖有源层123,以遮挡射向有源层123远离衬底11一侧的发光单元2发出的侧向光。第二遮光部132位于衬底11与电极层125之间,且与电极层125至少部分重叠,以及与有源层123间隔设置,并穿过第一绝缘层122。第二遮光部132的数量为二,两个第二遮光部132沿着从源极电极1251到漏极电极1252的方向分别设置于有源层123的相对两侧;两个第二遮光部132在第一绝缘层122上的正投影配合围设有源层123在第一绝缘层122上的正投影,以遮挡发光单元2发出的侧向光经电极层125或驱动基板1内部其他层反射后射向有源层123靠近衬底11的一侧的光。In this embodiment, the light shielding part 13 includes a first light shielding part 131 and a second light shielding part 132. The first light shielding part 131 and the second light shielding part 132 are provided independently of each other. The first light shielding part 131 includes a first light shielding top part 1311 and a first light shielding side part 1312. The projection of the first light-shielding portion 131 on the substrate 11 only covers the active layer 123 to block the lateral light emitted by the light-emitting unit 2 toward the side of the active layer 123 away from the substrate 11 . The second light-shielding portion 132 is located between the substrate 11 and the electrode layer 125 , at least partially overlaps the electrode layer 125 , is spaced apart from the active layer 123 , and passes through the first insulating layer 122 . The number of the second light shielding portions 132 is two, and the two second light shielding portions 132 are respectively disposed on opposite sides of the active layer 123 along the direction from the source electrode 1251 to the drain electrode 1252; the two second light shielding portions 132 The orthographic projection on the first insulating layer 122 cooperates with the orthographic projection of the surrounding active layer 123 on the first insulating layer 122 to block the lateral light emitted by the light-emitting unit 2 from being reflected by the electrode layer 125 or other layers inside the driving substrate 1 The light is then emitted toward the side of the active layer 123 close to the substrate 11 .
两个第二遮光部132中的一个对应设置于源极电极1251与衬底11之间,穿过第一绝缘层122并延伸至衬底11,另一个对应设置于漏极电极1252与衬底11之间,穿过第一绝缘层122并延伸至衬底11。两个第二遮光部132间隔且绝缘设置。两个第二遮光部132在第一绝缘层122 上的正投影配合围设栅极电极121在第一绝缘层122上的正投影,且第二遮光部132与栅极电极121之间填充有第一绝缘层122,防止第二遮光部132将电极层125与栅极电极121短接。两个第二遮光部132的形状和/或尺寸可以相同,也可以形状和尺寸均不相同,只需保证侧向光无法在平行于衬底11的方向上经过两个第二遮光部132之间的缝隙照射到有源层123上即可。在本实施例中,两个第二遮光部132在平行于衬底11的方向上的横截面均为U型,但尺寸不同。第二遮光部132与电极层125的材质相同,且相互连接。也就是说,第二遮光部132可以和电极层125一同制备,可以简化制备工艺。可以理解,第二遮光部132的材料也可以和电极层125的材质不同,例如,第二遮光部132采用黑色绝缘材料。两个遮光部13的材料可以相同,也可以不同,根据实际需求进行设计。One of the two second light-shielding portions 132 is disposed between the source electrode 1251 and the substrate 11 , passes through the first insulating layer 122 and extends to the substrate 11 , and the other is disposed correspondingly between the drain electrode 1252 and the substrate. 11 , passes through the first insulating layer 122 and extends to the substrate 11 . The two second light shielding parts 132 are spaced apart and insulated. The orthographic projection of the two second light-shielding portions 132 on the first insulating layer 122 matches the orthographic projection of the surrounding gate electrode 121 on the first insulating layer 122 , and the space between the second light-shielding portion 132 and the gate electrode 121 is filled with The first insulating layer 122 prevents the second light shielding portion 132 from short-circuiting the electrode layer 125 and the gate electrode 121 . The shape and/or size of the two second light shielding parts 132 may be the same, or may be different in shape and size, as long as it is ensured that lateral light cannot pass between the two second light shielding parts 132 in a direction parallel to the substrate 11 It suffices to illuminate the active layer 123 through the gap between them. In this embodiment, the cross-sections of the two second light shielding portions 132 in the direction parallel to the substrate 11 are both U-shaped, but have different sizes. The second light shielding part 132 and the electrode layer 125 are made of the same material and are connected to each other. That is to say, the second light shielding part 132 can be prepared together with the electrode layer 125, which can simplify the preparation process. It can be understood that the material of the second light shielding part 132 may also be different from the material of the electrode layer 125. For example, the second light shielding part 132 may be made of black insulating material. The materials of the two light-shielding parts 13 may be the same or different, and they may be designed according to actual requirements.
在其他实施例中,在平行于衬底11的方向上,第二遮光部132的横截面可为弧形、不封闭的多边形、或其他不规则的图形。本申请实施例中仅是示例性地示出了一些,不代表其结构仅限于此。第二遮光部132在平行于衬底11的方向上的壁厚d尽可能的大,使第二遮光部132与栅极电极121之间的间隙尽可能的小,进而使得发光单元2发出的侧向光经衬底11反射后经第二遮光部132与栅极电极121之间的间隙后不能射向有源层123靠近衬底11一侧;和/或,第二遮光部132在平行于衬底11的方向上的壁厚d尽可能的大,使第二遮光部132与公共电极14之间的间隙尽可能的小,进而使得发光单元2发出的侧向光经衬底11反射后的光无法经过第二遮光部132与栅极电极121之间的间隙,即反射后的光无法照射到有源层123靠近衬底11的一侧。第二遮光部132为黑色绝缘材料时,第二遮光部132可以与栅极电极121和公共电极14接触,使得第二遮光部132在平行于衬底11的方向上的壁厚d最大。第二遮光部132为金属材质时,由于制程的限制和防止出现短路,第二遮光部132与栅极电极121之间的间隙宽度不小于1.5μm,以及第二遮光部132与公共电极14之间的间隙宽度不小于1.5μm。在具体实施例中,第二遮光部132的具体形状、尺寸以及材质可根据实际需求进行设置即 可,对此不作具体限制。In other embodiments, in a direction parallel to the substrate 11 , the cross section of the second light shielding portion 132 may be an arc, an unclosed polygon, or other irregular shapes. The embodiments of the present application only show some examples, which does not mean that the structures thereof are limited to this. The wall thickness d of the second light shielding part 132 in the direction parallel to the substrate 11 is as large as possible, so that the gap between the second light shielding part 132 and the gate electrode 121 is as small as possible, thereby making the light emitting unit 2 emit light After being reflected by the substrate 11 and passing through the gap between the second light shielding part 132 and the gate electrode 121, the lateral light cannot be emitted to the side of the active layer 123 close to the substrate 11; and/or the second light shielding part 132 is parallel to The wall thickness d in the direction of the substrate 11 is as large as possible, so that the gap between the second light shielding part 132 and the common electrode 14 is as small as possible, so that the lateral light emitted by the light-emitting unit 2 is reflected by the substrate 11 The reflected light cannot pass through the gap between the second light shielding part 132 and the gate electrode 121 , that is, the reflected light cannot irradiate the side of the active layer 123 close to the substrate 11 . When the second light shielding part 132 is made of black insulating material, the second light shielding part 132 may be in contact with the gate electrode 121 and the common electrode 14 so that the wall thickness d of the second light shielding part 132 in the direction parallel to the substrate 11 is maximum. When the second light shielding part 132 is made of metal, due to process limitations and to prevent short circuits, the width of the gap between the second light shielding part 132 and the gate electrode 121 is not less than 1.5 μm, and the gap between the second light shielding part 132 and the common electrode 14 is not less than 1.5 μm. The gap width between them is not less than 1.5μm. In specific embodiments, the specific shape, size and material of the second light-shielding portion 132 can be set according to actual needs, and there is no specific limitation on this.
请参阅图8,图8是本申请提供的驱动基板与发光单元第五实施例的简易结构示意图。Please refer to FIG. 8 , which is a simplified structural diagram of a fifth embodiment of a driving substrate and a light-emitting unit provided by the present application.
本申请提供的驱动基板1与发光单元2第五实施例与本申请提供的驱动基板1与发光单元2第四实施例的结构基本相同,不同之处在于:遮光部13仅包括第二遮光部132。The structure of the fifth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application is basically the same as that of the fourth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application. The difference is that the light-shielding part 13 only includes a second light-shielding part. 132.
在本实施例中,遮光部13仅包括第二遮光部132。驱动基板1不包括第二绝缘层18和第一遮光部131。本实施例的遮光部13可以遮挡发光单元2发出的侧向光经反射后射向有源层123靠近衬底11一侧的光。In this embodiment, the light shielding part 13 only includes the second light shielding part 132 . The drive substrate 1 does not include the second insulating layer 18 and the first light shielding portion 131 . The light-shielding portion 13 of this embodiment can block the lateral light emitted by the light-emitting unit 2 and then reflected toward the side of the active layer 123 close to the substrate 11 .
请参阅图8至图10,图9是本申请提供的驱动基板与发光单元第六实施例的简易结构示意图,图10是图9中C-C处第二遮光部与有源层一实施例的剖面结构示意图。Please refer to Figures 8 to 10. Figure 9 is a simple structural schematic diagram of a sixth embodiment of a driving substrate and a light-emitting unit provided by the present application. Figure 10 is a cross-section of an embodiment of the second light shielding portion and the active layer at C-C in Figure 9. Schematic.
本申请提供的驱动基板1与发光单元2第六实施例与本申请提供的驱动基板1与发光单元2第五实施例的结构基本相同,不同之处在于:遮光部13仅包括第二遮光部132,第二遮光部132为4个。The sixth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application has basically the same structure as the fifth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application. The difference is that the light-shielding part 13 only includes a second light-shielding part. 132, and there are four second light shielding parts 132.
在本实施例中,第二遮光部132为4个,4个第二遮光部132彼此绝缘且间隔设置。4个第二遮光部132分别命名为第一子遮光部1321、第二子遮光部1322、第三子遮光部1323和第四子遮光部1324。第一子遮光部1321和第二子遮光部1322分别对应设置于源极电极1251与衬底11之间,穿过第一绝缘层122并延伸至衬底11。第三子遮光部1323和第四子遮光部1324分别对应设置于漏极电极1252与衬底11之间,穿过第一绝缘层122并延伸至衬底11。4个第二遮光部132中的两个为一组,每组第二遮光部132在第一绝缘层122上的正投影配合围设栅极电极121在第一绝缘层122上的正投影,且第二遮光部132与栅极电极121之间填充有第一绝缘层122。也就是说,第一子遮光部1321与第三子遮光部1323和第四子遮光部1324中的一个为一组,另外两个第二遮光部132为另一组。第二子遮光部1322与第三子遮光部1323尽可能的靠近栅极电极121设置,第一子遮光部1321和第四子遮光部1324尽可能的远离栅极电极121设置,并尽可能靠近公共电极14设置,且第一 子遮光部1321和第四子遮光部1324必须与电极层125重叠或相切设置,使得发光单元2发出的侧向光无法经过第一子遮光部1321与电极层125之间的间隙以及第四子遮光部1324与电极层125之间的间隙照射到衬底11。进一步地,由于第一子遮光部1321和第四子遮光部1324远离栅极电极121设置,使得发光单元2发出的侧向光能照射到衬底11上的光与衬底11的夹角相比于本申请提供的驱动基板1与发光单元2第五实施例中该侧向光能照射到衬底11上的光与衬底11的夹角更大,使得在本实施例中该侧向光在衬底11远离第二遮光部132的一侧表面的入射点a更远离栅极电极121,从而使发光单元2发出的侧向光经衬底11反射后的光无法经过第二子遮光部1322与栅极电极121之间的间隙以及第三子遮光部1323与栅极电极121之间的间隙,即,反射后的光无法照射到有源层123靠近衬底11的一侧。In this embodiment, the number of the second light shielding parts 132 is four, and the four second light shielding parts 132 are insulated from each other and arranged at intervals. The four second light-shielding parts 132 are respectively named first sub-light-shielding part 1321, second sub-light-shielding part 1322, third sub-light-shielding part 1323 and fourth sub-light-shielding part 1324. The first sub-light shielding portion 1321 and the second sub-light shielding portion 1322 are respectively disposed between the source electrode 1251 and the substrate 11 , passing through the first insulating layer 122 and extending to the substrate 11 . The third sub-light shielding portion 1323 and the fourth sub-light shielding portion 1324 are respectively disposed between the drain electrode 1252 and the substrate 11 , passing through the first insulating layer 122 and extending to the substrate 11 . Among the four second light-shielding portions 132 Two of them form a group, and the orthographic projection of the second light-shielding portion 132 on the first insulating layer 122 of each group matches the orthographic projection of the surrounding gate electrode 121 on the first insulating layer 122 , and the second light-shielding portion 132 and the gate The first insulating layer 122 is filled between the electrodes 121 . That is to say, the first sub-light shielding part 1321 and one of the third sub-light shielding part 1323 and the fourth sub-light shielding part 1324 form one group, and the other two second light-shielding parts 132 form another group. The second sub-light shielding part 1322 and the third sub-light shielding part 1323 are arranged as close to the gate electrode 121 as possible. The first sub-light shielding part 1321 and the fourth sub-light shielding part 1324 are arranged as far away from the gate electrode 121 as possible and as close as possible. The common electrode 14 is provided, and the first sub-light-shielding portion 1321 and the fourth sub-light-shielding portion 1324 must overlap or be arranged tangentially to the electrode layer 125 so that the lateral light emitted by the light-emitting unit 2 cannot pass through the first sub-light-shielding portion 1321 and the electrode layer. The gap between 125 and the gap between the fourth sub-light shielding part 1324 and the electrode layer 125 is illuminated to the substrate 11 . Furthermore, since the first sub-light shielding part 1321 and the fourth sub-light shielding part 1324 are arranged away from the gate electrode 121 , the lateral light emitted by the light-emitting unit 2 can illuminate the substrate 11 at an angle different from the angle between the substrate 11 and the substrate 11 . Compared with the fifth embodiment of the driving substrate 1 and the light-emitting unit 2 provided in this application, the angle between the light that the lateral light energy irradiates onto the substrate 11 and the substrate 11 is larger, so that in this embodiment, the lateral light energy irradiates the substrate 11. The incident point a of the light on the side surface of the substrate 11 away from the second light shielding part 132 is further away from the gate electrode 121 , so that the lateral light emitted by the light emitting unit 2 and reflected by the substrate 11 cannot pass through the second sub-light shielding part. The gap between the portion 1322 and the gate electrode 121 and the gap between the third sub-light shielding portion 1323 and the gate electrode 121 , that is, the reflected light cannot irradiate the side of the active layer 123 close to the substrate 11 .
第二遮光部132与电极层125的材质相同,且相互连接,可以简化生产工艺。在其他实施例中,至少部分的第二遮光部132与电极层125的材质可以不相同,例如第一子遮光部1321和第四子遮光部1324为黑色绝缘材料,第二子遮光部1322和第三子遮光部1323的材质与电极层125相同。The second light shielding part 132 and the electrode layer 125 are made of the same material and are connected to each other, which can simplify the production process. In other embodiments, at least part of the second light-shielding portion 132 and the electrode layer 125 may be made of different materials. For example, the first sub-light-shielding portion 1321 and the fourth sub-light-shielding portion 1324 are made of black insulating material, and the second sub-light-shielding portion 1322 and the fourth sub-light-shielding portion 1324 are made of black insulating material. The third sub-light shielding portion 1323 is made of the same material as the electrode layer 125 .
应当可以理解,本实施例中的第二遮光部132的设计方式,也同样适用于上述本申请提供的驱动基板1与发光单元2的其他实施例中,此处不再赘述,请参照本实施例进行设计。It should be understood that the design method of the second light-shielding portion 132 in this embodiment is also applicable to other embodiments of the driving substrate 1 and the light-emitting unit 2 provided by the present application, and will not be described again here. Please refer to this embodiment. Example design.
请参阅图8、图11和图12,图11是本申请提供的驱动基板与发光单元第七实施例的简易结构示意图,图12是图11中D-D处第二遮光部与有源层一实施例的剖面结构示意图。Please refer to Figures 8, 11 and 12. Figure 11 is a simplified structural diagram of the seventh embodiment of the driving substrate and light-emitting unit provided by the present application. Figure 12 is an implementation of the second light shielding portion and the active layer at D-D in Figure 11. Schematic diagram of the cross-sectional structure of the example.
本申请提供的驱动基板1与发光单元2第七实施例与本申请提供的驱动基板1与发光单元2第五实施例的结构基本相同,不同之处在于:第二遮光部132为黑色绝缘材料,且与公共电极14和栅极电极121接触。The seventh embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application has basically the same structure as the fifth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application. The difference is that the second light-shielding part 132 is made of black insulating material. , and in contact with the common electrode 14 and the gate electrode 121 .
在本实施例中,第二遮光部132为黑色绝缘材料,且与公共电极14和栅极电极121接触。本实施例第二遮光部132的遮光原理与本申请提 供的驱动基板1与发光单元2第六实施例的第二遮光部132的遮光原理相同,此处不再赘述。由于第二遮光部132为黑色绝缘材料,使得两个第二遮光部132可以均与公共电极14和栅极电极121接触,进一步地,两个遮光部132可以是如图7所示的设置方式。两个遮光部132也可以形成闭合图形,两个第二遮光部132还可以为一体成型结构。在本实施例中,两个第二遮光部132分别对应电极层设置,且相互接触,形成一体成型的环状结构,从而使发光单元2发出的侧向光经衬底11反射后的光无法经过第二遮光部132与栅极电极121之间的间隙,即,反射后的光无法照射到有源层123靠近衬底11的一侧。在其他实施例中,第二遮光部132可以为不规则图形,此处不作限制。In this embodiment, the second light shielding part 132 is made of black insulating material and is in contact with the common electrode 14 and the gate electrode 121 . The light-shielding principle of the second light-shielding portion 132 of this embodiment is the same as the light-shielding principle of the second light-shielding portion 132 of the sixth embodiment of the driving substrate 1 and the light-emitting unit 2 provided by this application, and will not be described again here. Since the second light shielding portion 132 is made of black insulating material, the two second light shielding portions 132 can both be in contact with the common electrode 14 and the gate electrode 121 . Furthermore, the two light shielding portions 132 can be arranged as shown in FIG. 7 . The two light shielding parts 132 may also form a closed figure, and the two second light shielding parts 132 may also be an integrally formed structure. In this embodiment, the two second light-shielding portions 132 are respectively provided corresponding to the electrode layers and contact each other to form an integral annular structure, so that the lateral light emitted by the light-emitting unit 2 and reflected by the substrate 11 cannot After passing through the gap between the second light shielding portion 132 and the gate electrode 121 , that is, the reflected light cannot irradiate the side of the active layer 123 close to the substrate 11 . In other embodiments, the second light shielding part 132 may have an irregular pattern, which is not limited here.
本申请提供了一种驱动基板1,驱动基板1用于驱动无机发光二极管发光,驱动基板1包括衬底11以及依次设置于衬底11上的第一绝缘层122、有源层123和电极层125;电极层125包括同层设置的源极电极1251与漏极电极1252;其中,还包括遮光部13,遮光部13位于电极层125与衬底11之间,且与电极层125至少部分重叠,以及与有源层123间隔设置,并穿过第一绝缘层122;和/或,遮光部13至少部分位于电极层125远离衬底11的一侧且覆盖有源层123。通过在有源层123的周围设置遮光部13,遮挡射向有源层123方向的光,避免驱动基板1中的薄膜晶体管12受到光照而使特性发生变化。This application provides a driving substrate 1. The driving substrate 1 is used to drive an inorganic light-emitting diode to emit light. The driving substrate 1 includes a substrate 11 and a first insulating layer 122, an active layer 123 and an electrode layer sequentially arranged on the substrate 11. 125; The electrode layer 125 includes a source electrode 1251 and a drain electrode 1252 arranged in the same layer; it also includes a light shielding portion 13, the light shielding portion 13 is located between the electrode layer 125 and the substrate 11, and at least partially overlaps the electrode layer 125 , and is spaced apart from the active layer 123 and passes through the first insulating layer 122; and/or the light shielding portion 13 is at least partially located on the side of the electrode layer 125 away from the substrate 11 and covers the active layer 123. By providing the light-shielding portion 13 around the active layer 123, the light directed toward the active layer 123 is blocked, thereby preventing the thin film transistor 12 in the driving substrate 1 from being exposed to light and causing changes in characteristics.
以上仅为本申请的实施方式,并非因此限制本申请的专利保护范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。The above are only embodiments of the present application, and do not limit the scope of patent protection of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of the present application may be directly or indirectly used in other related technical fields. , are all equally included in the patent protection scope of this application.

Claims (16)

  1. 一种驱动基板,用于驱动无机发光二极管发光,包括:A driving substrate used to drive inorganic light-emitting diodes to emit light, including:
    衬底;substrate;
    依次设置于所述衬底上的栅极、第一绝缘层、有源层和电极层;所述电极层包括同层设置的源极电极与漏极电极;A gate electrode, a first insulating layer, an active layer and an electrode layer are arranged on the substrate in sequence; the electrode layer includes a source electrode and a drain electrode arranged on the same layer;
    其中,还包括遮光部,所述遮光部位于所述电极层与所述衬底之间,且与所述电极层至少部分重叠,以及与所述有源层间隔设置,并穿过所述第一绝缘层;和/或,所述遮光部至少部分位于所述电极层远离所述衬底的一侧且覆盖所述有源层。Wherein, a light shielding portion is further included, the light shielding portion is located between the electrode layer and the substrate, at least partially overlaps with the electrode layer, is spaced apart from the active layer, and passes through the third an insulating layer; and/or, the light-shielding portion is at least partially located on a side of the electrode layer away from the substrate and covers the active layer.
  2. 根据权利要求1所述的驱动基板,其中,所述遮光部包括第一遮光部,所述第一遮光部至少部分位于所述电极层远离所述衬底的一侧且覆盖所述有源层。The driving substrate according to claim 1, wherein the light shielding portion includes a first light shielding portion, the first light shielding portion is at least partially located on a side of the electrode layer away from the substrate and covers the active layer .
  3. 根据权利要求2所述的驱动基板,其中,所述遮光部还包括第二遮光部,所述第二遮光部位于所述衬底与所述电极层之间,且穿过所述第一绝缘层。The driving substrate according to claim 2, wherein the light shielding portion further includes a second light shielding portion located between the substrate and the electrode layer and passing through the first insulation. layer.
  4. 根据权利要求3所述的驱动基板,其中,所述第一遮光部与所述第二遮光部相互独立设置;所述第二遮光部与所述电极层的材质相同,且相互连接。The drive substrate according to claim 3, wherein the first light shielding part and the second light shielding part are provided independently of each other; the second light shielding part and the electrode layer are made of the same material and are connected to each other.
  5. 根据权利要求3所述的驱动基板,其中,所述第二遮光部的数量为二,两个所述第二遮光部沿着从所述源极电极到所述漏极电极的方向分别设置于所述有源层的相对两侧;两个所述第二遮光部在所述第一绝缘层上的正投影配合围设所述有源层在所述第一绝缘层上的正投影。The driving substrate according to claim 3, wherein the number of the second light shielding portions is two, and the two second light shielding portions are respectively provided in a direction from the source electrode to the drain electrode. On opposite sides of the active layer; the orthographic projections of the two second light-shielding portions on the first insulating layer cooperate to surround the orthographic projection of the active layer on the first insulating layer.
  6. 根据权利要求3所述的驱动基板,其中,还包括第二绝缘层,所述第二绝缘层设置于所述电极层远离所述衬底的一侧;所述第一遮光部包括第一遮光顶部,所述第一遮光顶部设置于所述第二绝缘层远离所述衬底的一侧,且仅对应所述有源层设置并覆盖所述有源层。The drive substrate according to claim 3, further comprising a second insulating layer, the second insulating layer being disposed on a side of the electrode layer away from the substrate; the first light shielding portion includes a first light shielding layer. On the top, the first light-shielding top is disposed on a side of the second insulating layer away from the substrate, and is disposed only corresponding to and covering the active layer.
  7. 根据权利要求6所述的驱动基板,其中,所述第一遮光部还包括第一遮光侧部,所述第一遮光侧部位于所述第一遮光顶部与所述电极层之间,且穿过所述第二绝缘层并延伸至所述电极层表面。The driving substrate according to claim 6, wherein the first light-shielding part further includes a first light-shielding side part, the first light-shielding side part is located between the first light-shielding top and the electrode layer, and passes through through the second insulating layer and extending to the surface of the electrode layer.
  8. 根据权利要求7所述的驱动基板,其中,所述第一遮光侧部为环状结构,所述有源层在所述第二绝缘层上的投影位于所述环状结构内。The drive substrate according to claim 7, wherein the first light-shielding side portion is a ring-shaped structure, and the projection of the active layer on the second insulating layer is located within the ring-shaped structure.
  9. 根据权利要求7所述的驱动基板,其中,所述第一遮光顶部与所述第一遮光侧部为一体成型结构,且采用黑色绝缘材料。The drive substrate according to claim 7, wherein the first light-shielding top portion and the first light-shielding side portion are integrally formed and made of black insulating material.
  10. 根据权利要求1所述的驱动基板,其中,所述遮光部包括第二遮光部,所述第二遮光部位于所述衬底与所述电极层之间,且穿过所述第一绝缘层。The driving substrate according to claim 1, wherein the light shielding portion includes a second light shielding portion located between the substrate and the electrode layer and passing through the first insulating layer. .
  11. 根据权利要求10所述的驱动基板,其中,所述第二遮光部的数量为四,四个所述第二遮光部中的两个为一组,每组所述第二遮光部在所述第一绝缘层上的正投影配合围设所述有源层在所述第一绝缘层上的正投影。The drive substrate according to claim 10, wherein the number of the second light shielding parts is four, two of the four second light shielding parts form a group, and each group of the second light shielding parts is in the The orthographic projection on the first insulating layer cooperates to surround the orthographic projection of the active layer on the first insulating layer.
  12. 根据权利要求11所述的驱动基板,其中,一组所述第二遮光部靠近所述栅极设置,另一组所述第二遮光部远离所述栅极设置且与所述电极层重叠或相切设置。The driving substrate according to claim 11, wherein one group of the second light shielding portions is disposed close to the gate electrode, and the other group of the second light shielding portions is disposed away from the gate electrode and overlaps the electrode layer, or Tangent settings.
  13. 根据权利要求11所述的驱动基板,其中,所述第二遮光部与所述电极层的材质相同,四个所述第二遮光部彼此绝缘且间隔设置。The driving substrate according to claim 11, wherein the second light shielding portion and the electrode layer are made of the same material, and the four second light shielding portions are insulated from each other and are arranged at intervals.
  14. 根据权利要求11所述的驱动基板,其中,一组所述第二遮光部为黑色绝缘材料,另一组所述第二遮光部与所述电极层的材质相同。The driving substrate according to claim 11, wherein one set of the second light-shielding parts is made of black insulating material, and the other set of the second light-shielding parts is made of the same material as the electrode layer.
  15. 根据权利要求10所述的驱动基板,其中,所述第二遮光部的数量为二,两个所述第二遮光部在所述第一绝缘层上的正投影配合围设所述有源层在所述第一绝缘层上的正投影;所述第二遮光部为黑色绝缘材料。The drive substrate according to claim 10, wherein the number of the second light shielding portions is two, and the orthographic projections of the two second light shielding portions on the first insulating layer cooperate to surround the active layer. Orthographic projection on the first insulating layer; the second light-shielding part is made of black insulating material.
  16. 一种显示面板,其中,所述显示面包括驱动基板和多个无机发光二极管,所述驱动基板为权利要求1所述的驱动基板。A display panel, wherein the display surface includes a driving substrate and a plurality of inorganic light-emitting diodes, and the driving substrate is the driving substrate according to claim 1.
PCT/CN2022/143542 2022-08-23 2022-12-29 Display panel and drive substrate thereof WO2024040843A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211014947.9A CN115101545B (en) 2022-08-23 2022-08-23 Display panel and driving substrate thereof
CN202211014947.9 2022-08-23

Publications (1)

Publication Number Publication Date
WO2024040843A1 true WO2024040843A1 (en) 2024-02-29

Family

ID=83301058

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/143542 WO2024040843A1 (en) 2022-08-23 2022-12-29 Display panel and drive substrate thereof

Country Status (2)

Country Link
CN (1) CN115101545B (en)
WO (1) WO2024040843A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101545B (en) * 2022-08-23 2023-01-31 惠科股份有限公司 Display panel and driving substrate thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070090365A1 (en) * 2005-10-20 2007-04-26 Canon Kabushiki Kaisha Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
US20120168756A1 (en) * 2010-12-31 2012-07-05 Inha-Industry Partnership Institute Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor
KR20140069896A (en) * 2012-11-30 2014-06-10 엘지디스플레이 주식회사 Thin film transistor substrate and Display Device using the same
CN109273410A (en) * 2018-09-12 2019-01-25 重庆惠科金渝光电科技有限公司 A kind of processing method and display panel of display panel
CN110703501A (en) * 2019-10-29 2020-01-17 深圳市华星光电半导体显示技术有限公司 Light-emitting substrate, backlight module and display panel
CN115101545A (en) * 2022-08-23 2022-09-23 惠科股份有限公司 Display panel and driving substrate thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101624226B1 (en) * 2008-12-02 2016-05-26 삼성디스플레이 주식회사 Display substrate, method of manufacturing the same and display panel having the display substrate
CN101887897B (en) * 2009-05-13 2013-02-13 北京京东方光电科技有限公司 TFT-LCD (Thin Film Transistor Liquid Crystal Display) array base plate and manufacturing method thereof
CN109148489B (en) * 2018-08-30 2022-06-10 合肥鑫晟光电科技有限公司 Array substrate, manufacturing method and display device
CN111834465A (en) * 2019-12-09 2020-10-27 云谷(固安)科技有限公司 Array substrate, display panel and display device
CN110911424B (en) * 2019-12-11 2022-08-09 京东方科技集团股份有限公司 Array substrate, preparation method thereof and display panel
CN112838100B (en) * 2021-01-07 2023-08-01 深圳市华星光电半导体显示技术有限公司 Light-emitting panel and manufacturing method thereof
CN113745249B (en) * 2021-08-23 2022-09-27 武汉华星光电半导体显示技术有限公司 Display panel, preparation method thereof and mobile terminal
CN114447119A (en) * 2022-01-20 2022-05-06 广州华星光电半导体显示技术有限公司 TFT substrate and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070090365A1 (en) * 2005-10-20 2007-04-26 Canon Kabushiki Kaisha Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
US20120168756A1 (en) * 2010-12-31 2012-07-05 Inha-Industry Partnership Institute Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor
KR20140069896A (en) * 2012-11-30 2014-06-10 엘지디스플레이 주식회사 Thin film transistor substrate and Display Device using the same
CN109273410A (en) * 2018-09-12 2019-01-25 重庆惠科金渝光电科技有限公司 A kind of processing method and display panel of display panel
CN110703501A (en) * 2019-10-29 2020-01-17 深圳市华星光电半导体显示技术有限公司 Light-emitting substrate, backlight module and display panel
CN115101545A (en) * 2022-08-23 2022-09-23 惠科股份有限公司 Display panel and driving substrate thereof

Also Published As

Publication number Publication date
CN115101545A (en) 2022-09-23
CN115101545B (en) 2023-01-31

Similar Documents

Publication Publication Date Title
US20210083023A1 (en) Array substrate and display device
KR102176719B1 (en) Flexible display panel and manufacturing method thereof
CN110071225A (en) Display panel and production method
CN110190084B (en) Display panel, manufacturing method thereof and display device
CN109390354B (en) Display apparatus
US11469292B2 (en) Display device with reduced cell area and method of manufacturing display device
CN103633110B (en) Organic light emitting display device and method for fabricating the same
KR20160127873A (en) Display device
KR20120043438A (en) Organic light emitting display apparatus
CN103996691A (en) Display device
WO2021213046A1 (en) Display panel and preparation method therefor, and display device
CN113658990B (en) Display panel, preparation method thereof and display device
WO2024040843A1 (en) Display panel and drive substrate thereof
KR20160084545A (en) Display device
WO2024027047A1 (en) Display panel and manufacturing method therefor
US20240040862A1 (en) Display panel and a display device
CN105575993B (en) Organic light-emitting display device and preparation method thereof
KR20150019951A (en) Organic light emitting diode display
KR20160035669A (en) Display device
KR20140109153A (en) Organic electroluminescent display and method of manufacturing the same
CN104777940B (en) A kind of touch control electrode layer and touch-screen
KR20150047697A (en) Organic light emitting display device
WO2022126585A1 (en) Display substrate, display panel, and display device
CN114335109A (en) Display panel and preparation method thereof
WO2022041022A1 (en) Display substrate and display device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22956374

Country of ref document: EP

Kind code of ref document: A1