CN110071225A - Display panel and production method - Google Patents
Display panel and production method Download PDFInfo
- Publication number
- CN110071225A CN110071225A CN201910276226.7A CN201910276226A CN110071225A CN 110071225 A CN110071225 A CN 110071225A CN 201910276226 A CN201910276226 A CN 201910276226A CN 110071225 A CN110071225 A CN 110071225A
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- auxiliary electrode
- light emitting
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
Present applicant proposes a kind of display panel and production method, display area described in the display panel includes positioned at firstth area at the display area edge；Auxiliary electrode and the light emitting protecting layer on the auxiliary electrode are provided in firstth area, the light emitting protecting layer is Chong Die with the auxiliary electrode part on the auxiliary electrode.The application is by being arranged an auxiliary electrode in display panel fringe region, and cathode layer with the auxiliary electrode by overlapping, so that the current potential of cathode layer increases, the pressure drop of slowing down cathode layer improves the homogeneity of display panel brightness.
Description
Technical field
This application involves display field, in particular to a kind of display panel and production method.
Background technique
In flat panel display, Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) is aobvious
Show device have it is frivolous, actively shine, fast response time, angle of visibility is big, colour gamut is wide, brightness is high and many merits such as low in energy consumption, by
Gradually become the third generation display technology after liquid crystal display.
With the increase of size of display panels, the cathode layer area of OLED also be will increase.The luminous OLED display screen pair in top
It requires to cause cathode too thick in the transmitance of cathode layer, the cathode layer of such large area necessarily results in the drop of voltage in face
Low, the light emission luminance so as to cause picture reduces and poor brightness homogeneity.
Therefore, a kind of display panel is needed at present to solve the above problems.
Summary of the invention
The application provides a kind of display panel and production method, poor to solve existing OLED display panel brightness homogeneity
The technical issues of.
To solve the above problems, technical solution provided by the present application is as follows:
The application provides a kind of display panel, including display area, wherein
The display area includes positioned at firstth area at the display area edge；
Auxiliary electrode and the light emitting protecting layer on the auxiliary electrode, the luminous guarantor are provided in firstth area
Orthographic projection of the sheath on the auxiliary electrode is Chong Die with the auxiliary electrode part.
In the display panel of the application,
The auxiliary electrode includes first electrode and second electrode；
The first electrode and the light shield layer same layer of the display panel are arranged；
The second electrode and the source-drain electrode same layer of the display panel are arranged.
In the display panel of the application,
The display area further includes the secondth area surrounded by firstth area；
It is provided with substrate in secondth area, the film crystal pipe unit on the substrate, is located on the substrate
Light emitting device layer and pixel defining layer；
The light emitting device layer includes the anode layer being located on the film crystal pipe unit, on the anode layer
Luminescent layer and the cathode layer on the luminescent layer；
One end of the luminescent layer and the cathode layer is connect with the auxiliary electrode.
In the display panel of the application,
The orthographic projection of the light emitting protecting layer and the luminescent layer in the second electrode is not overlapped, the cathode layer and
The orthographic projection of the luminescent layer in the second electrode is not overlapped.
In the display panel of the application,
The material of the light emitting protecting layer is one of silica, silicon oxynitride or silicon nitride or a variety of.
The production method that the application also proposed a kind of display panel comprising:
One substrate is provided；
Film crystal pipe unit and auxiliary electrode are formed over the substrate；
Light emitting protecting layer is formed on the auxiliary electrode；
Light emitting device layer is formed in the film crystal pipe unit；
Wherein, the display area includes the firstth area positioned at the display area edge, the auxiliary electrode and described
Light emitting protecting layer is located in firstth area, orthographic projection of the light emitting protecting layer on the auxiliary electrode and auxiliary electricity
Pole partly overlaps.
In the production method of the application,
It forms film crystal pipe unit over the substrate and the step of auxiliary electrode includes:
The first metal layer is formed over the substrate, and it is brilliant that patterned processing makes the first metal layer form the film
The first electrode of the light shield layer of body pipe unit and the auxiliary electrode；
Buffer layer is formed on the light shield layer and the first electrode；
Active layer, gate insulation layer, grid, the insulating layer of the film crystal pipe unit are formed on the buffer layer；
Using the first etch process, the first via hole and the second via hole are formed on insulating layer between described,
First via hole makes the active layer partial denudation, and second via hole makes the first electrode partial denudation；
Insulating layer forms third metal layer between described, and patterned processing makes the third metal layer form the film
The second electrode of the source-drain electrode of transistor unit and the auxiliary electrode,
The source-drain electrode is electrically connected by first via hole with the active layer,
The second electrode is electrically connected by second via hole with the first electrode.
In the production method of the application,
Include: in the step of forming light emitting protecting layer on the auxiliary electrode
Passivation layer and flatness layer are sequentially formed in the second electrode and the source-drain electrode；
Using the second etch process, third via hole and the first opening are formed on the passivation layer and the flatness layer；
The 4th metal layer is formed on the flat laye, and patterned processing makes the 4th metal layer form described shine
The anode layer of device layer and the third electrode being connect with the auxiliary electrode,
The third electrode is overlapped on side of first opening far from the film crystal pipe unit；
Pixel defining layer is formed on the anode layer and the third electrode, using third etch process in the anode
The pixel defining layer corresponding to the second opening and first opening is formed on layer；
Supporter is filled in first opening；
One first inorganic layer is formed in the pixel defining layer, patterned processing makes first inorganic layer form institute
State light emitting protecting layer；
Remove above support.
In the production method of the application,
Include: in the step of film crystal pipe unit forms light emitting device layer
Luminescent layer and cathode layer are sequentially formed on the pixel layer；
Wherein, one end of the luminescent layer and the cathode layer is connect with the second electrode；
The orthographic projection panel of the light emitting protecting layer and the luminescent layer in the second electrode is not overlapped, the cathode
The orthographic projection panel of layer and the luminescent layer in the second electrode is not overlapped.
In the production method of the application,
The material of the light emitting protecting layer is one of silica, silicon oxynitride or silicon nitride or a variety of.
The utility model has the advantages that the application by display panel fringe region be arranged an auxiliary electrode, cathode layer by with it is described
Auxiliary electrode overlap joint, so that the current potential of cathode layer increases, the pressure drop of slowing down cathode layer improves the homogeneity of display panel brightness.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the plane structure chart of the application display panel；
Fig. 2 is the film layer structure figure of the application display panel；
The step of Fig. 3 is the application display panel production method is schemed.
Fig. 4 A~4G is the process sequence diagram of the application display panel production method.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
Referring to Fig. 1, Fig. 1 is the plane structure chart of the application display panel 100.
The display panel 100 includes display area 400 and the non-display area positioned at 400 periphery of display area
500.The display area 400 includes being located at first area 200 at 400 edge of display area and being wrapped by firstth area 200
The second area 300 enclosed.
Referring to Fig. 2, Fig. 2 is the film layer structure figure of the application display panel 100.
Auxiliary electrode 30 and the light emitting protecting layer 40 on the auxiliary electrode 30 are provided in firstth area 200,
Orthographic projection of the light emitting protecting layer 40 on the auxiliary electrode 30 partly overlaps with the auxiliary electrode 30.
It is provided with substrate 101, the tft layer 10 on the substrate 101 in secondth area 300 and is located at
Light emitting device layer 20 on the tft layer 10.
In one embodiment, the raw material of the substrate 101 can be glass substrate, quartz base plate, resin substrate etc.
One of.
In one embodiment, the substrate 101 can also be flexible base board.The material of the flexible base board can be PI
(polyimides).
The tft layer 10 includes positioned at multiple film crystal pipe units 11 in the second area 300 and positioned at the firstth area
200 auxiliary electrode 30.
The film crystal pipe unit 11 includes etch stop layer type, back channel etch type or top-gate thin-film transistors type etc.
Structure, specific there is no limit.The application is illustrated by taking top-gate thin-film transistors type as an example.
The film crystal pipe unit 11 includes: light shield layer 102, buffer layer 103, active layer 104, gate insulation layer 105, grid
Pole 106, insulating layer 107, source-drain electrode 108, passivation layer 109 and flatness layer 110.
The light shield layer 102 is formed on the substrate 101, is mainly used for blocking light source progress film crystal pipe unit
11, influence the driving effect of thin film transistor (TFT).
The buffer layer 103 is formed on the light shield layer 102, is mainly used for buffering the pressure between film layer matter structure,
And there can also be the oxygen that centainly blocks water.
In one embodiment, the material of the buffer layer 103 includes one of silicon nitride or silica or a variety of.
The active layer 104 is formed on the buffer layer 103.The active layer 104 includes the doping through ion doping
Area's (not shown).
In one embodiment, the material of the active layer 104 can be indium gallium zinc oxide (IGZO), i.e., the half of conduction
Conductor.
The gate insulation layer 105 is formed on the active layer 104.
The gate insulation layer 105 covers the active layer 104.Described insulating layer 107 is used for the active layer 104
It is isolated with other metal layers.
The grid 106 is formed on the gate insulation layer 105.
The metal material of the grid 106 usually can be using gold such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper
Belong to, the composition of above-mentioned several metal materials also can be used.
In one embodiment, the metal material of the grid 106 can be molybdenum.
Described insulating layer 107 is formed on the grid 106.
Described insulating layer 107 covers the grid 106.Described insulating layer 107 is mainly used for the grid 106
It is isolated with the source-drain electrode 108.
The source-drain electrode 108 be formed in it is described between on insulating layer 107.
The metal material of the source-drain electrode 108 can usually use molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium, copper or titanium
The composition of above-mentioned several metal materials also can be used in the metals such as aluminium alloy.
The source-drain electrode 108 is electrically connected by the first via hole 111 with the doped region on the active layer 104.
In one embodiment, the metal material of the source-drain electrode 108 can be titanium aluminium titanium.
The passivation layer 109 and the flatness layer 110 are formed on the source-drain electrode 108, and the passivation layer 109 is for protecting
Demonstrate,prove the technologic planarization of the thin film transistor (TFT).
The light emitting device layer 20 includes anode layer 201, luminescent layer 202 and the cathode layer being formed in the array substrate
203；
The anode layer 201 is formed on the flatness layer 110.
The anode layer 201 is mainly used for providing the hole for absorbing electronics.
In the present embodiment, it is illustrated by taking top-emitting OLED device as an example, therefore the anode layer 201 can be non-
Transparent or transparent metal electrode.
The luminescent layer 202 is formed on the anode layer 201.The luminescent layer 202 is divided by pixel defining layer 204
Multiple luminescence units.
The cathode layer 203 is formed on the luminescent layer 202.
The cathode layer 203 covers the luminescent layer 202 and the pixel defining layer 204 on the flatness layer 110.
In one embodiment, the cathode layer 203 is transparent material.
In one embodiment, the light emitting device layer 20 further includes third via hole 205.The anode layer 201 passes through institute
Third via hole 205 is stated to be electrically connected with the source-drain electrode 108.
When the anode layer 201 be non-transparent material when, luminescent layer 202 generate light by the anode layer 201 to
It is projected far from 101 direction of substrate.It, can be on the anode layer 201 when the anode layer 201 is transparent material
One reflecting layer is set, so that the light through the anode layer 201 is projected to far from 101 direction of substrate.
Referring to Fig. 1, being provided with substrate 101 in firstth area 200 in the display panel 100 of the application, being located at institute
State the auxiliary electrode 30 on substrate 101, the light emitting protecting layer 40 on the auxiliary electrode 30.
The auxiliary electrode 30 includes first electrode 301 and second electrode 302.
In one embodiment, the first electrode 301 and 102 same layer of light shield layer of the display panel 100 are arranged, institute
108 same layer of source-drain electrode for stating second electrode 302 and the display panel 100 is arranged.
In one embodiment, the first electrode 301 and 104 same layer of active layer of the display panel 100 are arranged, institute
108 same layer of source-drain electrode for stating second electrode 302 and the display panel 100 is arranged.
In one embodiment, the second electrode 302 can be arranged with 106 same layer of grid.
The auxiliary electrode 30 further includes the second via hole 303.
The second electrode 302 is electrically connected by second via hole 303 with the first electrode 301.
Insulating layer 107 and the part buffer layer 103 between second via hole 303 runs through described.
The first opening 304 is provided in firstth area 200.
First opening 304 is located in the second electrode 302.
The third electrode 305 being additionally provided in firstth area 200 in first opening 304.
The third electrode 305 is arranged with 201 same layer of anode layer.The third electrode 305 is overlapped on described first
Be open 304 sides far from secondth area 300.
Be additionally provided in firstth area 200 pixel defining layer 204 on the third electrode 305, be located at it is described
Light emitting protecting layer 40 in pixel defining layer 204, the 4th electrode 306 in the light emitting protecting layer 40.
4th electrode 306 is formed in light shield technique with the cathode layer 203 with along with.
Orthographic projection of the light emitting protecting layer 40 on the auxiliary electrode 30 partly overlaps with the auxiliary electrode 30.Institute
State the barrier bed that light emitting protecting layer 40 is mainly used in the evaporation process of the luminescent layer 202 and the cathode layer 203.Pass through tune
The deposition angles of the whole luminescent layer 202 and the cathode layer 203 overlap the luminescent layer 202 and the cathode layer 203
In first opening 304 close to the side in firstth area 200.
In one embodiment, one end of the luminescent layer 202 and the cathode layer 203 and the auxiliary electrode 30 connect
It connects.The orthographic projection of the light emitting protecting layer 40 and the luminescent layer 202 in the second electrode 302 is not overlapped, the cathode
The orthographic projection of layer 203 and the luminescent layer 202 in the second electrode 302 is not overlapped.
In one embodiment, the material of the light emitting protecting layer 40 is one in silica, silicon oxynitride or silicon nitride
Kind is a variety of.
The application by display panel frontside edge region be arranged an auxiliary electrode 30, cathode layer 203 by with it is described auxiliary
Electrode 30 is helped to overlap, so that the current potential of cathode layer 203 increases, the pressure drop of slowing down cathode layer 203 improves 100 brightness of display panel
Homogeneity.
Referring to Fig. 3, Fig. 3 schemes the step of being 100 production method of the application display panel.
Fig. 4 A~4G is please referred to, Fig. 4 A~4G is the process sequence diagram of 100 production method of the application display panel.
The production method of the display panel 100 includes:
S10, a substrate 101 is provided；
Fig. 4 A is please referred to, the raw material of the substrate 101 can be in glass substrate, quartz base plate, resin substrate etc.
It is a kind of.
In one embodiment, the substrate 101 can also be flexible base board.The material of the flexible base board can be PI
(polyimides).
S20, film crystal pipe unit 11 and auxiliary electrode 30 are formed on the substrate 101；
This step predominantly forms the tft layer 10 on the substrate 101.The tft layer 10
Including multiple film crystal pipe units 11 and positioned at the auxiliary electrode 30 of the display panel frontside edge.
The display panel 100 includes display area 400 and the non-display area positioned at 400 periphery of display area
500.The display area 400 includes being located at first area 200 at 400 edge of display area and being wrapped by firstth area 200
The second area 300 enclosed.
The film crystal pipe unit 11 is located at secondth area 300, and the auxiliary electrode 30 is located at firstth area
200。
Fig. 4 A is please referred to, this step specifically includes:
S201, the first metal layer is formed on the substrate 101, patterned processing makes the first metal layer form institute
State the light shield layer 102 of film crystal pipe unit 11 and the first electrode 301 of the auxiliary electrode 30；
The first electrode 301 is formed in light shield technique with the light shield layer 102 with along with.The first metal layer
Material is lighttight metal molybdenum.
S202, buffer layer 103 is formed on the light shield layer 102 and the first electrode 301；
S203, active layer 104, the gate insulation layer that the film crystal pipe unit 11 is formed on the buffer layer 103
105, grid 106, insulating layer 107；
The buffer layer 103 is formed on the light shield layer 102, is mainly used for buffering the pressure between film layer matter structure,
And there can also be the oxygen that centainly blocks water.
In one embodiment, the material of the buffer layer 103 includes one of silicon nitride or silica or a variety of.
The active layer 104 is formed on the buffer layer 103.The active layer 104 includes the doping through ion doping
Area's (not shown).
In one embodiment, the material of the active layer 104 can be indium gallium zinc oxide (IGZO), i.e., the half of conduction
Conductor.
The gate insulation layer 105 is formed on the active layer 104.
The gate insulation layer 105 covers the active layer 104.Described insulating layer 107 is used for the active layer 104
It is isolated with other metal layers.
The grid 106 is formed on the gate insulation layer 105.
The metal material of the grid 106 usually can be using gold such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper
Belong to, the composition of above-mentioned several metal materials also can be used.
In one embodiment, the metal material of the grid 106 can be molybdenum.
Described insulating layer 107 is formed on the grid 106.
Described insulating layer 107 covers the grid 106.Described insulating layer 107 is mainly used for the grid 106
It is isolated with the source-drain electrode 108.
S204, using the first etch process, form the first via hole 111 and the second via hole on insulating layer 107 between described
303；
Fig. 4 B is please referred to, first via hole 111 makes 104 partial denudation of active layer, and second via hole 303 makes institute
State 301 partial denudation of first electrode.
Insulating layer 107 between first via hole 111 runs through described, insulating layer 107 between second via hole 303 runs through described
And the part buffer layer 103.
S205, insulating layer 107 forms third metal layer between described, and patterned processing forms the third metal layer
The source-drain electrode 108 of the film crystal pipe unit 11 and the second electrode 302 of the auxiliary electrode 30；
Fig. 4 C is please referred to, the metal material of the source-drain electrode 108 can usually be closed using molybdenum, aluminium, alumel, molybdenum tungsten
The composition of above-mentioned several metal materials also can be used in the metals such as gold, chromium, copper or titanium-aluminium alloy.
The source-drain electrode 108 is electrically connected by the first via hole 111 with the doped region on the active layer 104.Described second
Electrode 302 is electrically connected by second via hole 303 with the first electrode 301.
In the present embodiment, the first electrode 301 and the second electrode 302 form the auxiliary of the display panel 100
Help electrode 30.
S30, light emitting protecting layer 40 is formed on the auxiliary electrode 30；
This step specifically includes:
S301, passivation layer 109 and flatness layer 110 are sequentially formed in the second electrode 302 and the source-drain electrode 108；
S302, using the second etch process, third via hole 205 is formed on the passivation layer 109 and the flatness layer 110
And first opening 304；
Fig. 4 C is please referred to, in step S301~302, the passivation layer 109 and the flatness layer 110 are formed in the source
In drain electrode 108, the passivation layer 109 is for guaranteeing the technologic planarization of the thin film transistor (TFT).
The third via hole 205 and first opening 304 are twice etch process.
The third via hole 205 runs through the passivation layer 109 and the flatness layer 110.
First opening 304 is located in the second electrode 302.
S303, the 4th metal layer is formed on the flatness layer 110, patterned processing forms the 4th metal layer
The anode layer 201 of the light emitting device layer 20 and the third electrode 305 being connect with the auxiliary electrode 30；
Fig. 4 D is please referred to, the anode layer 201 is formed on the flatness layer 110.
The anode layer 201 is mainly used for providing the hole for absorbing electronics.
In the present embodiment, it is illustrated by taking top-emitting OLED device as an example, therefore the anode layer 201 can be non-
Transparent or transparent metal electrode.
When the anode layer 201 be non-transparent material when, luminescent layer 202 generate light by the anode layer 201 to
It is projected far from 101 direction of substrate.It, can be on the anode layer 201 when the anode layer 201 is transparent material
One reflecting layer is set, so that the light through the anode layer 201 is projected to far from 101 direction of substrate.
The third electrode 305 is located in first opening 304.
The third electrode 305 and the anode layer 201 by with along with light shield technique formed.The third electrode 305 is taken
It connects in first opening, 304 sides far from the film crystal pipe unit 11.
S304, pixel defining layer 204 is formed on the anode layer 201 and the third electrode 305, etched using third
Technique forms the pixel definition corresponding to the second opening 206 and first opening 304 on the anode layer 201
Layer 204.
Fig. 4 D is please referred to, second opening 206 is located in secondth area 300.Second opening 206 is opened for pixel
Mouthful
S305, supporter 307 is filled in first opening 304；
Fig. 4 E is please referred to, above support 307 can be photoresist.
In one embodiment, above support 307 can also be the biggish aluminium of density, molybdenum, copper compared with tin indium oxide
The material easily removed Deng other.
S306, one first inorganic layer is formed in the pixel defining layer 204, patterned processing makes described first inorganic
Layer forms the light emitting protecting layer 40；
Please refer to Fig. 4 F, orthographic projection of the light emitting protecting layer 40 on the auxiliary electrode 30 and the auxiliary electrode 30
It partly overlaps.
In one embodiment, the material of the light emitting protecting layer 40 is one in silica, silicon oxynitride or silicon nitride
Kind is a variety of.
S307, removal above support.
S40, light emitting device layer 20 is formed in the film crystal pipe unit 11；
Fig. 4 G is please referred to, the luminescent layer 202 and the cathode layer 203 are sequentially formed in the pixel defining layer 204.
The luminescent layer 202 is formed on the anode layer 201.The luminescent layer 202 is divided by pixel defining layer 204
Multiple luminescence units.
The cathode layer 203 is formed on the luminescent layer 202.
The cathode layer 203 covers the luminescent layer 202 and the pixel defining layer 204 in the array substrate.
In one embodiment, the cathode layer 203 is transparent material.
In making technology, steaming of the light emitting protecting layer 40 mainly as the luminescent layer 202 and the cathode layer 203
Barrier bed in depositing process.Deposition angles by adjusting the luminescent layer 202 and the cathode layer 203 make the luminescent layer
202 and the cathode layer 203 be overlapped on it is described first opening 304 close to firstth area 200 side.
In the evaporation process of the light emitting device layer 20, the luminescent layer 202 is deposited with first angle, the yin
Pole layer 203 is deposited with second angle.The first angle is less than the second angle.
In one embodiment, one end of the luminescent layer 202 and the cathode layer 203 and the auxiliary electrode 30 connect
It connects.The orthographic projection of the light emitting protecting layer 40 and the luminescent layer 202 in the second electrode 302 is not overlapped, the cathode
The orthographic projection of layer 203 and the luminescent layer 202 in the second electrode 302 is not overlapped.
In one embodiment, while forming cathode layer 203, the 4th electrode 306 is also formed.4th electrode
306 are located in the light emitting protecting layer 40.
The application also proposed a kind of display module, and the display module includes above-mentioned display panel and is located at the display
Layer of polarizer, cover layer on panel.The working principle of the display module is same or similar with above-mentioned display panel, specifically
Embodiment the application repeats no more.
Present applicant proposes a kind of display panel and production method, display area described in the display panel includes being located at institute
State firstth area at display area edge；Auxiliary electrode and the luminous guarantor on the auxiliary electrode are provided in firstth area
Sheath, orthographic projection of the light emitting protecting layer on the auxiliary electrode are Chong Die with the auxiliary electrode part.The application passes through
One auxiliary electrode is set in display panel fringe region, cathode layer with the auxiliary electrode by overlapping, so that the electricity of cathode layer
Position increases, the pressure drop of slowing down cathode layer, improves the homogeneity of display panel brightness.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of display panel, including display area, which is characterized in that
The display area includes positioned at firstth area at the display area edge；
Auxiliary electrode and the light emitting protecting layer on the auxiliary electrode, the light emitting protecting layer are provided in firstth area
Orthographic projection on the auxiliary electrode is Chong Die with the auxiliary electrode part.
2. display panel according to claim 1, which is characterized in that
The auxiliary electrode includes first electrode and second electrode；
The first electrode and the light shield layer same layer of the display panel are arranged；
The second electrode and the source-drain electrode same layer of the display panel are arranged.
3. display panel according to claim 1, which is characterized in that
The display area further includes the secondth area surrounded by firstth area；
Substrate, the film crystal pipe unit on the substrate, the hair on the substrate are provided in secondth area
Optical device layer and pixel defining layer；
The light emitting device layer includes the anode layer on the film crystal pipe unit, shining on the anode layer
Layer and the cathode layer on the luminescent layer；
One end of the luminescent layer and the cathode layer is connect with the auxiliary electrode.
4. display panel according to claim 3, which is characterized in that
The orthographic projection of the light emitting protecting layer and the luminescent layer in the second electrode is not overlapped, the cathode layer and described
The orthographic projection of luminescent layer in the second electrode is not overlapped.
5. display panel according to claim 1, which is characterized in that
The material of the light emitting protecting layer is one of silica, silicon oxynitride or silicon nitride or a variety of.
6. a kind of production method of display panel characterized by comprising
One substrate is provided；
Film crystal pipe unit and auxiliary electrode are formed over the substrate；
Light emitting protecting layer is formed on the auxiliary electrode；
Light emitting device layer is formed in the film crystal pipe unit；
Wherein, the display area includes the firstth area positioned at the display area edge, the auxiliary electrode and described is shone
Protective layer is located in firstth area, orthographic projection of the light emitting protecting layer on the auxiliary electrode and the auxiliary electrode portion
Divide overlapping.
7. production method according to claim 6, which is characterized in that
It forms film crystal pipe unit over the substrate and the step of auxiliary electrode includes:
The first metal layer is formed over the substrate, and patterned processing makes the first metal layer form the thin film transistor (TFT)
The first electrode of the light shield layer of unit and the auxiliary electrode；
Buffer layer is formed on the light shield layer and the first electrode；
Active layer, gate insulation layer, grid, the insulating layer of the film crystal pipe unit are formed on the buffer layer；
Using the first etch process, the first via hole and the second via hole are formed on insulating layer between described,
First via hole makes the active layer partial denudation, and second via hole makes the first electrode partial denudation；
Insulating layer forms third metal layer between described, and patterned processing makes the third metal layer form the film crystal
The second electrode of the source-drain electrode of pipe unit and the auxiliary electrode,
The source-drain electrode is electrically connected by first via hole with the active layer,
The second electrode is electrically connected by second via hole with the first electrode.
8. production method according to claim 6, which is characterized in that
Include: in the step of forming light emitting protecting layer on the auxiliary electrode
Passivation layer and flatness layer are sequentially formed in the second electrode and the source-drain electrode；
Using the second etch process, third via hole and the first opening are formed on the passivation layer and the flatness layer；
The 4th metal layer is formed on the flat laye, and patterned processing makes the 4th metal layer form the luminescent device
The anode layer of layer and the third electrode being connect with the auxiliary electrode,
The third electrode is overlapped on side of first opening far from the film crystal pipe unit；
Pixel defining layer is formed on the anode layer and the third electrode, using third etch process on the anode layer
Form the pixel defining layer corresponding to the second opening and first opening；
Supporter is filled in first opening；
One first inorganic layer is formed in the pixel defining layer, patterned processing makes first inorganic layer form the hair
Light protection layer；
Remove above support.
9. production method according to claim 6, which is characterized in that
Include: in the step of film crystal pipe unit forms light emitting device layer
Luminescent layer and cathode layer are sequentially formed on the pixel layer；
Wherein, one end of the luminescent layer and the cathode layer is connect with the second electrode；
The orthographic projection of the light emitting protecting layer and the luminescent layer in the second electrode is not overlapped, the cathode layer and described
The orthographic projection of luminescent layer in the second electrode is not overlapped.
10. production method according to claim 6, which is characterized in that
The material of the light emitting protecting layer is one of silica, silicon oxynitride or silicon nitride or a variety of.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910276226.7A CN110071225A (en) | 2019-04-08 | 2019-04-08 | Display panel and production method |
| PCT/CN2019/083624 WO2020206721A1 (en) | 2019-04-08 | 2019-04-22 | Display panel and fabrication method therefor, and display module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910276226.7A CN110071225A (en) | 2019-04-08 | 2019-04-08 | Display panel and production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110071225A true CN110071225A (en) | 2019-07-30 |
Family
ID=67367278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910276226.7A Pending CN110071225A (en) | 2019-04-08 | 2019-04-08 | Display panel and production method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110071225A (en) |
| WO (1) | WO2020206721A1 (en) |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110518053A (en) * | 2019-08-29 | 2019-11-29 | 合肥鑫晟光电科技有限公司 | Display base plate and preparation method thereof, display device |
| CN110556406A (en) * | 2019-08-26 | 2019-12-10 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN110993642A (en) * | 2019-11-01 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111211243A (en) * | 2020-01-09 | 2020-05-29 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN111223876A (en) * | 2019-11-06 | 2020-06-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111682057A (en) * | 2020-07-07 | 2020-09-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN112331808A (en) * | 2019-12-30 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Weak-viscosity film, ink-jet printing display panel, preparation method of display panel and display device |
| WO2021027081A1 (en) * | 2019-08-13 | 2021-02-18 | 武汉华星光电半导体显示技术有限公司 | Display panel and display apparatus |
| WO2021031364A1 (en) * | 2019-08-20 | 2021-02-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and fabrication method therefor, and display device |
| CN112802975A (en) * | 2020-12-31 | 2021-05-14 | 上海天马微电子有限公司 | Display panel, display device and manufacturing method of array substrate |
| CN112885974A (en) * | 2021-01-18 | 2021-06-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113036057A (en) * | 2021-03-04 | 2021-06-25 | 合肥鑫晟光电科技有限公司 | Array substrate, preparation method thereof, display panel and display device |
| CN113097407A (en) * | 2021-03-16 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN113097406A (en) * | 2021-03-16 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN113097408A (en) * | 2021-03-17 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113097265A (en) * | 2021-03-25 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113140687A (en) * | 2021-04-20 | 2021-07-20 | 昆山国显光电有限公司 | Display panel, manufacturing method of display panel and light emitting device |
| WO2021170031A1 (en) * | 2020-02-28 | 2021-09-02 | 京东方科技集团股份有限公司 | Display substrate, fabrication method therefor and display device |
| CN114122083A (en) * | 2021-11-09 | 2022-03-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN114141826A (en) * | 2021-11-16 | 2022-03-04 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN114188379A (en) * | 2021-12-02 | 2022-03-15 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114203775A (en) * | 2021-11-24 | 2022-03-18 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and OLED display device |
| WO2022133903A1 (en) * | 2020-12-24 | 2022-06-30 | 京东方科技集团股份有限公司 | Display panel, manufacturing method therefor, and display apparatus |
| WO2022222078A1 (en) * | 2021-04-21 | 2022-10-27 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display apparatus |
| CN116456769A (en) * | 2023-04-20 | 2023-07-18 | 惠科股份有限公司 | Display panel and display terminal |
| WO2023178759A1 (en) * | 2022-03-23 | 2023-09-28 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and manufacturing method therefor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116847682A (en) * | 2021-12-14 | 2023-10-03 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| KR20230091546A (en) * | 2021-12-16 | 2023-06-23 | 엘지디스플레이 주식회사 | Display apparatus having a light-emitting device |
| US20230207734A1 (en) * | 2021-12-28 | 2023-06-29 | Lg Display Co., Ltd. | Light Emitting Display Device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3136440A1 (en) * | 2015-08-31 | 2017-03-01 | LG Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
| CN107079561A (en) * | 2014-09-22 | 2017-08-18 | 索尼公司 | Display device, the method and electronic installation for manufacturing display device |
| CN107342304A (en) * | 2016-04-29 | 2017-11-10 | 乐金显示有限公司 | Organic light-emitting display device and its manufacture method |
| US20180151831A1 (en) * | 2016-11-30 | 2018-05-31 | Lg Display Co., Ltd. | Organic light-emitting display device |
| CN108336107A (en) * | 2017-01-19 | 2018-07-27 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode（OLED）Array substrate and preparation method thereof, display device |
| CN108538890A (en) * | 2018-04-20 | 2018-09-14 | 深圳市华星光电技术有限公司 | A kind of organic light-emitting display device |
| CN109671739A (en) * | 2017-10-16 | 2019-04-23 | 乐金显示有限公司 | Large area organic light emitting diode display |
| CN109980119A (en) * | 2017-12-28 | 2019-07-05 | 乐金显示有限公司 | Top light emitting organic light emitting diode display |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101182233B1 (en) * | 2010-06-11 | 2012-09-12 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| US20130069067A1 (en) * | 2011-09-20 | 2013-03-21 | Keun Chun Youn | Organic light emitting diode (oled) display device and method for manufacturing the same |
| CN103715231B (en) * | 2013-12-31 | 2016-11-23 | 京东方科技集团股份有限公司 | Organic electroluminescence display panel, display device |
-
2019
- 2019-04-08 CN CN201910276226.7A patent/CN110071225A/en active Pending
- 2019-04-22 WO PCT/CN2019/083624 patent/WO2020206721A1/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107079561A (en) * | 2014-09-22 | 2017-08-18 | 索尼公司 | Display device, the method and electronic installation for manufacturing display device |
| EP3136440A1 (en) * | 2015-08-31 | 2017-03-01 | LG Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
| CN107342304A (en) * | 2016-04-29 | 2017-11-10 | 乐金显示有限公司 | Organic light-emitting display device and its manufacture method |
| US20180151831A1 (en) * | 2016-11-30 | 2018-05-31 | Lg Display Co., Ltd. | Organic light-emitting display device |
| CN108336107A (en) * | 2017-01-19 | 2018-07-27 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode（OLED）Array substrate and preparation method thereof, display device |
| CN109671739A (en) * | 2017-10-16 | 2019-04-23 | 乐金显示有限公司 | Large area organic light emitting diode display |
| CN109980119A (en) * | 2017-12-28 | 2019-07-05 | 乐金显示有限公司 | Top light emitting organic light emitting diode display |
| CN108538890A (en) * | 2018-04-20 | 2018-09-14 | 深圳市华星光电技术有限公司 | A kind of organic light-emitting display device |
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021027081A1 (en) * | 2019-08-13 | 2021-02-18 | 武汉华星光电半导体显示技术有限公司 | Display panel and display apparatus |
| WO2021031364A1 (en) * | 2019-08-20 | 2021-02-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and fabrication method therefor, and display device |
| CN110556406A (en) * | 2019-08-26 | 2019-12-10 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| US20210210571A1 (en) * | 2019-08-26 | 2021-07-08 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and manufacturing method thereof |
| US11665936B2 (en) * | 2019-08-26 | 2023-05-30 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display panel and manufacturing method thereof |
| CN110518053A (en) * | 2019-08-29 | 2019-11-29 | 合肥鑫晟光电科技有限公司 | Display base plate and preparation method thereof, display device |
| CN110993642A (en) * | 2019-11-01 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111223876A (en) * | 2019-11-06 | 2020-06-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN112331808A (en) * | 2019-12-30 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Weak-viscosity film, ink-jet printing display panel, preparation method of display panel and display device |
| CN111211243A (en) * | 2020-01-09 | 2020-05-29 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| WO2021170031A1 (en) * | 2020-02-28 | 2021-09-02 | 京东方科技集团股份有限公司 | Display substrate, fabrication method therefor and display device |
| CN111682057A (en) * | 2020-07-07 | 2020-09-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111682057B (en) * | 2020-07-07 | 2021-09-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| WO2022133903A1 (en) * | 2020-12-24 | 2022-06-30 | 京东方科技集团股份有限公司 | Display panel, manufacturing method therefor, and display apparatus |
| CN112802975A (en) * | 2020-12-31 | 2021-05-14 | 上海天马微电子有限公司 | Display panel, display device and manufacturing method of array substrate |
| CN112885974A (en) * | 2021-01-18 | 2021-06-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113036057A (en) * | 2021-03-04 | 2021-06-25 | 合肥鑫晟光电科技有限公司 | Array substrate, preparation method thereof, display panel and display device |
| CN113097406A (en) * | 2021-03-16 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN113097407A (en) * | 2021-03-16 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN113097408B (en) * | 2021-03-17 | 2022-08-23 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113097408A (en) * | 2021-03-17 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113097265A (en) * | 2021-03-25 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113097265B (en) * | 2021-03-25 | 2024-01-16 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN113140687A (en) * | 2021-04-20 | 2021-07-20 | 昆山国显光电有限公司 | Display panel, manufacturing method of display panel and light emitting device |
| CN113140687B (en) * | 2021-04-20 | 2022-09-23 | 昆山国显光电有限公司 | Display panel, manufacturing method of display panel and light emitting device |
| WO2022222078A1 (en) * | 2021-04-21 | 2022-10-27 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display apparatus |
| CN114122083A (en) * | 2021-11-09 | 2022-03-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| WO2023087336A1 (en) * | 2021-11-16 | 2023-05-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method therefor |
| CN114141826A (en) * | 2021-11-16 | 2022-03-04 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN114141826B (en) * | 2021-11-16 | 2023-08-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN114203775A (en) * | 2021-11-24 | 2022-03-18 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and OLED display device |
| CN114188379A (en) * | 2021-12-02 | 2022-03-15 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2023178759A1 (en) * | 2022-03-23 | 2023-09-28 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and manufacturing method therefor |
| CN116456769A (en) * | 2023-04-20 | 2023-07-18 | 惠科股份有限公司 | Display panel and display terminal |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020206721A1 (en) | 2020-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110071225A (en) | Display panel and production method | |
| US11152443B2 (en) | Display panel having a storage capacitor and method of fabricating same | |
| US10403757B2 (en) | Top-gate self-aligned metal oxide semiconductor TFT and method of making the same | |
| CN107180852B (en) | A kind of touch-control display panel and display device | |
| US11417716B2 (en) | Organic light emitting display substrate and panel with photodetector for light compensation of subpixel | |
| US9917117B2 (en) | Display device and method of fabricating the same | |
| US7859606B2 (en) | Semiconductor device | |
| US9685489B2 (en) | OLED pixel structure and OLED display device | |
| CN103681740B (en) | Oled device and manufacture the method for this device | |
| CN107611085B (en) | Manufacturing method of OLED (organic light emitting diode) back plate | |
| KR20150101407A (en) | Thin film transistor | |
| US20160380239A1 (en) | Method for manufacturing amoled display device and structure thereof | |
| KR20120045682A (en) | Method of fabricating flexible organic electro luminescent device | |
| CN109378326A (en) | Display panel and preparation method thereof | |
| CN108376688A (en) | A kind of photosensory assembly and preparation method thereof, array substrate, display device | |
| KR20170061778A (en) | Thin Film Transistor Substrate For Organic Light Emitting Diode Display | |
| US10784287B2 (en) | TFT substrate and manufacturing method thereof | |
| TW201533897A (en) | Organic light-emitting display panel and fabrication method thereof | |
| CN109638020A (en) | Display panel and preparation method thereof, display module | |
| WO2018049744A1 (en) | Method for manufacturing amoled pixel drive circuit | |
| KR20150101417A (en) | Display device | |
| CN104952879A (en) | Dual-gate TFT (thin-film transistor) substrate structure using COA (color filter on array) technique | |
| US20170352711A1 (en) | Manufacturing method of tft backplane and tft backplane | |
| US9190426B2 (en) | Display device and method of manufacturing the same | |
| CN109545836B (en) | OLED display device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190730 |
|
| WD01 | Invention patent application deemed withdrawn after publication |