CN112768590A - Preparation method of display panel and display panel - Google Patents
Preparation method of display panel and display panel Download PDFInfo
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- CN112768590A CN112768590A CN202011614256.3A CN202011614256A CN112768590A CN 112768590 A CN112768590 A CN 112768590A CN 202011614256 A CN202011614256 A CN 202011614256A CN 112768590 A CN112768590 A CN 112768590A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention provides a display panel and a preparation method thereof. The preparation method comprises the following steps: providing a substrate base plate; preparing a thin film transistor layer on the substrate and corresponding to the non-light-emitting region; preparing a plurality of metal contact electrodes on the substrate and corresponding to the light emitting areas; preparing a black organic adhesive layer on the thin film transistor layer and the metal contact electrode, wherein the black organic adhesive layer comprises a plurality of metal balls; and placing a plurality of LED chips on the black organic adhesive layer corresponding to the light emitting area, and pressing the plurality of LED chips by using a first force to enable the black organic adhesive layer between the first electrode and the second electrode of each LED chip and the corresponding metal contact electrode to form a conductive area so as to respectively enable the first electrode and the second electrode to be conducted with the corresponding metal contact electrode. The invention can avoid the problem that the thin film transistor is easily scratched by steel mesh printing and improve the production yield.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
At present, Mini LEDs (Mini Light-Emitting diodes) are widely used in displays with an oversized size (larger than 100 inches), and the mainstream technology thereof is a small-pitch LED technology using a PCB (Printed Circuit Board) as a substrate. The technical scheme based on the PCB substrate is that an MOS (Metal-Oxide Semiconductor) tube responsible for driving and an LED lamp are packaged together and then transferred and fixed on the PCB substrate. This solution, however, faces two problems. The first MOS tube and the LED lamp are large in package size; secondly, the cost of the PCB and the MOS tube is high. The two problems can be solved by adopting a technical scheme that a Thin-Film Transistor (TFT) substrate is adopted to drive the Mini LED. Compared with the technical scheme of a PCB (printed circuit board) substrate and an MOS (metal oxide semiconductor) tube, the device cost of the MOS tube can be saved by adopting the TFT substrate for driving, and the size of the TFT substrate produced by the existing panel factory is larger, so that the cost of the TFT substrate in unit area is lower compared with that of the PCB substrate. And because the MOS tube and the LED lamp do not need to be packaged together, the size of the whole device can be reduced, and the device has the advantage of realizing smaller pixel pitch. Therefore, a spliced screen of Mini LEDs driven by a TFT substrate is favored by manufacturers.
In the existing manufacturing process of the Mini LED display screen, the LED chip die bonding needs to be carried out on the substrate. The crystal fixing steps are as follows: printing soldering tin by adopting a steel mesh; placing the chip at the bonding pad by using a die bonder; reflow soldering is carried out, and the soldering tin is melted so that the bonding pad and the chip are well contacted; and cleaning residual rosin, and coating packaging glue on the surface for protection. The existing TFT arrays are all prepared on a glass substrate, and when steel screen printing is carried out on the glass substrate, a steel mesh easily scratches a film on the glass substrate, so that circuits and devices in the TFT arrays are damaged. The current solution is to coat a protective layer on the glass substrate before the steel mesh printing, and the protective layer can play a role in preventing scratches. But the production efficiency for preparing the protective layer is lower, and the protective capability for steel mesh scratches is limited. Therefore, it is necessary to improve this defect.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a display panel and the display panel, which are used for solving the technical problems that the display panel in the prior art is easily scratched by steel mesh printing soldering tin, so that the production yield is low, and the technical problems of low production efficiency and limited scratch resistance of a coating protective layer are solved.
The embodiment of the invention provides a preparation method of a display panel, wherein the display panel comprises a luminous region and a non-luminous region, and the preparation method comprises the following steps: providing a substrate base plate; preparing a thin film transistor layer on the substrate and corresponding to the non-light-emitting region; preparing a plurality of metal contact electrodes on the substrate and corresponding to the light emitting areas, wherein the metal contact electrodes are respectively electrically connected with the thin film transistor layer; preparing a black organic adhesive layer on the thin film transistor layer and the metal contact electrode, wherein the black organic adhesive layer comprises a plurality of metal balls; placing a plurality of LED chips on the black organic adhesive layer corresponding to the light emitting area, wherein each LED chip corresponds to two metal contact electrodes, and pressing the plurality of LED chips by using a first force to enable the black organic adhesive layer between the first electrode and the second electrode of each LED chip and the corresponding metal contact electrodes to form conductive areas so as to respectively enable the first electrode and the second electrode to be conducted with the corresponding metal contact electrodes; and preparing packaging glue on the black organic glue layer, wherein the packaging glue covers the LED chips.
In the preparation method of the display panel provided by the embodiment of the invention, the black organic glue layer is made of nitrile rubber, chloroprene rubber or silicon rubber.
In the preparation method of the display panel provided by the embodiment of the invention, the thickness of the black organic glue layer ranges from 1 micrometer to 20 micrometers.
In the preparation method of the display panel provided by the embodiment of the invention, the diameter range of the metal ball is 10 nanometers to 200 nanometers.
In the method for manufacturing a display panel according to the embodiment of the present invention, the first force is in a range of 0.1 mpa to 1 mpa.
The embodiment of the present invention further provides a display panel, which includes a light emitting region and a non-light emitting region, and further includes: the LED chip comprises a substrate, a thin film transistor layer, a plurality of metal contact electrodes, a black organic glue layer, a plurality of LED chips and packaging glue. The thin film transistor layer is positioned on the substrate and is arranged corresponding to the non-luminous area. The metal contact electrode is arranged on the substrate corresponding to the light emitting region and electrically connected with the thin film transistor layer. The black organic glue layer is positioned on the thin film transistor layer and the metal contact electrode. The black organic glue layer comprises a plurality of metal balls. The plurality of LED chips are positioned on the black organic glue layer and arranged corresponding to the light emitting areas, wherein each LED chip comprises a first electrode and a second electrode. And the packaging adhesive is positioned on the black organic adhesive layer and covers the LED chips. The first electrode and the second electrode are respectively arranged corresponding to the metal contact electrodes, and the black organic adhesive layer between the first electrode and the second electrode and the metal contact electrodes is a pressed conductive area, so that the first electrode and the second electrode are conducted with the corresponding metal contact electrodes.
In the display panel provided by the embodiment of the invention, the black organic glue layer is made of nitrile rubber, chloroprene rubber or silicon rubber.
In the display panel provided by the embodiment of the invention, the thickness of the black organic glue layer ranges from 1 micrometer to 20 micrometers.
In the display panel provided by the embodiment of the invention, the diameter of the metal ball ranges from 10 nanometers to 200 nanometers.
In the display panel provided by the embodiment of the invention, the material of the metal ball is gold, silver, or an alloy containing gold and/or silver.
Has the advantages that: according to the preparation method of the display panel provided by the embodiment of the invention, the black organic adhesive layer is prepared on the thin film transistor layer and the metal contact electrode, the black organic adhesive layer comprises a plurality of metal balls, the LED chip is arranged on the black organic adhesive layer, the LED chip is pressed by using a first force, and at the moment, the first electrode and the second electrode of the LED chip are conducted with the metal contact electrode through the conductive area formed by the mutual contact of the metal balls in the black organic adhesive layer, so that the LED chip can be driven by the thin film transistor layer, the problem that the circuit and the device of the thin film transistor are easily scratched by steel mesh printing in the crystal fixing process of the conventional display panel in a welding mode can be avoided, and the production yield is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below.
Fig. 1 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention.
Fig. 2a to 2d are schematic cross-sectional views of the assembly structure of each step in the process flow of manufacturing the display panel according to the embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a basic structure of a display panel according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. In the drawings, the size and thickness of components illustrated in the drawings are not to scale for clarity and ease of understanding and description.
As shown in fig. 1, a flow chart of a method for manufacturing a display panel according to an embodiment of the present invention is provided, where the display panel includes a light emitting region and a non-light emitting region, and the method includes:
s101, providing a substrate base plate;
s102, preparing a thin film transistor layer on the substrate and corresponding to the non-light-emitting region;
s103, preparing a plurality of metal contact electrodes on the substrate and corresponding to the light emitting areas, wherein the metal contact electrodes are electrically connected with the thin film transistor layer respectively;
s104, preparing a black organic adhesive layer on the thin film transistor layer and the metal contact electrode, wherein the black organic adhesive layer comprises a plurality of metal balls;
s105, placing a plurality of LED chips on the black organic adhesive layer corresponding to the light emitting area, wherein each LED chip corresponds to two metal contact electrodes, and pressing the LED chips with a first force to enable the black organic adhesive layer between the first electrode and the second electrode of each LED chip and the corresponding metal contact electrodes to form a conductive area so as to enable the first electrode and the second electrode to be respectively conducted with the corresponding metal contact electrodes; and
s106, preparing packaging glue on the black organic glue layer, wherein the packaging glue covers the LED chips.
It should be noted that, in the embodiment of the present invention, a black organic adhesive layer is prepared on the thin film transistor layer and the metal contact electrode, the black organic adhesive layer includes a plurality of metal balls, the LED chip is disposed on the black organic adhesive layer, and the LED chip is pressed with a first force, at this time, the metal balls in the black organic adhesive layer contact each other to form a conductive region due to extrusion, so that the first electrode and the second electrode of the LED chip are respectively conducted with the metal contact electrode, and the LED chip can be driven by a driving circuit in the thin film transistor layer. According to the preparation method of the display panel provided by the embodiment of the invention, the LED chip can be adhered and fixed by pressing the LED chip on the black organic adhesive layer, and the first electrode and the second electrode of the LED chip and the metal contact electrode can be conducted by the conductive area formed by mutually contacting the metal balls in the black organic adhesive layer by extruding the black organic adhesive layer, so that the LED chip is driven by the thin film transistor layer, the problem that the lines and devices of the thin film transistor are easily scratched when soldering tin is printed on a steel mesh in the crystal fixing process of the existing display panel in a welding mode is solved, and the production yield is improved.
The first force refers to a force value required for enabling the metal balls in the black organic adhesive layer in the area below the first electrode and the second electrode of the LED chip to contact with each other, so that the black organic adhesive layer in the area below the first electrode and the second electrode of the LED chip is converted into a conductive organic film. The first force is in a range of 0.1 mpa to 1 mpa.
In one embodiment, the black organic glue layer is an anisotropic conductive glue. Anisotropic conductive adhesive refers to an adhesive that conducts electricity in the Z direction but does not conduct electricity in the X and Y directions, and the anisotropy of the conductive adhesive causes the material to have a single direction of conduction in the direction perpendicular to the Z axis. Conductivity in this direction is achieved by using a relatively low volume of conductive filler material (metal balls). When pressure is applied to such a stacked structure, it will cause the conductive particles between the LED chip and the area where the pressure is applied by the metal contact electrode to be trapped. Once electronic continuity is created, the electrically insulating polymer is hardened by chemical reaction (thermal curing) or by cooling (thermal plastic), the hardened electrically insulating polymer material bonds the first and second electrodes of the LED chip to the metal contact electrodes, respectively, and helps maintain contact pressure between the first and second electrodes and the metal contact electrodes and conductive particles, thereby enabling driving of the LED chip through the thin-film transistor layer. The die bonding method provided by the embodiment of the invention is suitable for superfine spacing and is beneficial to further miniaturization of packaging; the interconnection process is simple and has fewer process steps, so that the production efficiency is improved and the production cost is reduced; the high-flexibility high-temperature-resistant high-.
In one embodiment, the material of the black organic glue layer is nitrile rubber, chloroprene rubber or silicon rubber.
The nitrile rubber is prepared from butadiene and acrylonitrile by an emulsion polymerization method, and has the advantages of excellent oil resistance, high wear resistance, high heat resistance and high bonding force. Specifically, the acrylonitrile-butadiene rubber contains 42-46, 36-41, 31-35, 25-30, 18-24 and other five acrylonitrile contents (%). The more the acrylonitrile content, the better the oil resistance, but the cold resistance is reduced accordingly. Nitrile rubber can be used in air at 120 degrees celsius or in oil at 150 degrees celsius for a long period of time. In addition, the nitrile rubber has good water resistance, air tightness and excellent bonding performance, and can well fix the LED chip.
It should be noted that chloroprene rubber, also called chloroprene rubber or neoprene rubber, is an elastomer produced by alpha-polymerization reaction of chloroprene (i.e. 2-chloro-1, 3-butadiene) as a main raw material, has good physical and mechanical properties, oil resistance, heat resistance, flame resistance, sunlight resistance, ozone resistance, acid and alkali resistance, chemical reagent resistance, higher tensile strength, elongation, reversible crystallinity and good adhesion, and can well fix the LED chip.
The silicone rubber is a rubber having a main chain composed of silicon and oxygen atoms alternately, and two organic groups are usually bonded to the silicon atom. The silicon rubber mainly comprises silicon-oxygen chain links containing methyl and a small amount of vinyl, has excellent insulating property, good corona resistance and arc resistance, can well fix the LED chips, and can avoid electric signal crosstalk between electrodes of the LED chips which are adjacently arranged.
In one embodiment, the thickness of the black organic glue layer ranges from 1 micron to 20 microns. When the thickness of black organic glue film was between 1 micron to 20 microns, can guarantee that metal ball wherein when receiving the pressure of first dynamics, rapid mutual contact can not produce great deformation, can not lead to the fact the influence to the fixed of LED chip.
In one embodiment, the metal spheres have a diameter in a range from 10 nanometers to 200 nanometers. When the diameter of the metal balls is between 10 nanometers and 200 nanometers, the metal balls can be distributed relatively uniformly, the conductive thin film formed by the metal balls after being contacted with each other has excellent conductivity, and the metal balls cannot be contacted with the metal balls in other non-conductive regions to influence the driving of the LED chip. The metal ball is made of gold, silver or an alloy containing gold and/or silver. Specifically, the distribution density of the metal balls ranges from 10000 per square centimeter to 100000 per square centimeter.
In one embodiment, the distance between the LED chips is more than 0 and less than 0.5 mm. The LED chips provided by the embodiment of the invention are Mini LED chips or Micro LED chips (Micro LED chips), and are driven by the thin film transistor layer, so that MOS (metal oxide semiconductor) tubes are not required to be arranged, the small-space distribution can be realized, the space between the LED chips is reduced, the number of the LED chips arranged on the display panel with the same size is increased, the resolution of the display panel is improved, and the display effect is improved.
As shown in fig. 2a to 2d, the display panel according to the embodiment of the present invention includes a light-emitting region a1 and a non-light-emitting region a2, where the display panel includes a plurality of pixel regions (only one pixel region is shown in the figure) arranged in an array, and each pixel region is divided into a light-emitting region a1 and a non-light-emitting region a 2.
First, as shown in fig. 2a, a substrate 201 is provided, wherein the substrate 201 may be rigid, such as inorganic substances like glass and hard coating, or flexible, such as organic substances like polyimide and polyethylene terephthalate; then, a thin-film transistor layer 202 is prepared on the substrate 201 and corresponding to the non-light-emitting region a2, the thin-film transistor layer 202 includes a pixel driving circuit, but the specific structure of the thin-film transistor layer 202 is not the focus of the present invention, and therefore the specific structure is not shown, and the present invention is not limited thereto; then, a plurality of metal contact electrodes 203 are prepared on the substrate 201 and corresponding to the light emitting region a1, and the metal contact electrodes 203 are electrically connected to the thin-film transistor layer 202 respectively (the specific electrically connected structure is not shown, but the invention is not limited thereto); next, a black organic glue layer 204 is prepared on the thin-film transistor layer 202 and the plurality of metal contact electrodes 203, wherein the black organic glue layer 204 includes a plurality of metal balls 205 therein. The black organic glue layer 204 can shield the thin-film transistor layer 202 from light.
Next, as shown in fig. 2b, a plurality of LED chips 206 are disposed on the black organic glue layer 204, and the plurality of LED chips 206 includes a red LED chip 2061, a green LED chip 2062, and a blue LED chip 2063. Each of the LED chips 206 includes a first electrode 207 and a second electrode 208.
Next, as shown in fig. 2c, a plurality of the LED chips 206 are pressed with a first force until the black organic glue layer of the pressed conductive region 209 under the first electrode 207 and the second electrode 208 has a conductive function. Specifically, when the plurality of LED chips 206 are pressed, the plurality of metal balls 205 in the black organic adhesive layer in the pressed conductive region 209 under the first electrode 207 and the second electrode 208 of the plurality of LED chips 206 are in contact with each other due to pressing, so as to form an organic thin film with a conductive function, and at this time, the plurality of metal contact electrodes 203 can be respectively conducted with the first electrode 207 and the second electrode 208 of the plurality of LED chips 206 through the organic thin film with a conductive function, that is, on the premise that no steel mesh printing solder die bonding is required, not only can the plurality of LED chips be fixed, but also the plurality of LED chips can be driven through the thin film transistor layer, so that the production yield is improved, and the manufacturing process is simplified.
Next, as shown in fig. 2d, an encapsulation adhesive 210 is coated on the black organic adhesive layer 204, and the encapsulation adhesive 210 covers the plurality of LED chips 206, thereby completing the preparation of the display panel. The packaging adhesive 210 may be a thermal curing adhesive or other adhesive with good fluidity, and the packaging adhesive 210 may fill up a step difference between the plurality of LED chips 206 and the black organic adhesive layer 204, and may separate the plurality of LED chips 206 from an external environment, so as to prevent water and oxygen in the external environment from invading and damaging the plurality of LED chips 206.
As shown in fig. 3, a cross-sectional view of a basic structure of a display panel according to an embodiment of the present invention is provided, where the display panel includes a light-emitting region a1 and a non-light-emitting region a2, and further includes: a substrate 201, a thin film transistor layer 202, a plurality of metal contact electrodes 203, a black organic glue layer 204, a plurality of LED chips 206, and a packaging glue 210. Thin-film-transistor layer 202 is located on substrate 201 and is disposed corresponding to non-light emitting area a 2. A plurality of metal contact electrodes 203 are disposed on the substrate 201 corresponding to the light emitting region a1 and electrically connected to the thin-film transistor layer 202. A black organic glue layer 204 is located on the thin-film transistor layer 202 and the metal contact electrode 203. The black organic glue layer 204 includes a plurality of metal balls 205 therein. A plurality of LED chips 206 are disposed on the black organic glue layer 204 and corresponding to the light emitting region a1, wherein each of the LED chips 206 includes a first electrode 207 and a second electrode 208. The packaging adhesive 210 is disposed on the black organic adhesive layer 204 and covers the LED chips 206. The first electrode 207 and the second electrode 208 are respectively disposed corresponding to the metal contact electrodes 203, and the black organic adhesive layer between the first electrode 207 and the second electrode 208 and the corresponding metal contact electrodes 203 is a pressed conductive region 209, so that the first electrode 207 and the second electrode 208 are electrically connected to the corresponding metal contact electrodes 203.
The display panel provided by the embodiment of the invention is prepared by the preparation method of the display panel provided by the above fig. 1 and fig. 2a to 2 d. Specifically, the black organic adhesive layer of the pressed conductive region 209 under the first electrode 207 and the second electrode 208 of the plurality of LED chips 206 has a conductive function, and the plurality of LED chips 206 are pressed by a first force, so that the metal balls 205 in the black organic adhesive layer in the regions under the first electrode 207 and the second electrode 208 of the plurality of LED chips 206 are pressed to contact each other, thereby forming an organic thin film with a conductive function, at this time, the plurality of metal contact electrodes 203 can be respectively conducted with the first electrode 207 and the second electrode 208 of the plurality of LED chips 206 through the organic thin film with a conductive function, that is, under the premise of no need of steel mesh printing, soldering tin and die bonding, the plurality of LED chips can be fixed, and the plurality of LED chips can be driven through the thin film transistor layer, thereby improving the production yield.
In one embodiment, the black organic adhesive layer 204 is made of nitrile rubber, neoprene rubber, or silicone rubber.
In one embodiment, the thickness of the black organic glue layer 204 ranges from 1 micron to 20 microns. When the thickness of the black organic glue layer 204 is between 1 micron and 20 microns, the metal balls 205 therein can be ensured to be rapidly contacted with each other without generating large deformation when being pressed by a first force, and the fixation of the LED chip 206 is not affected.
In one embodiment, the metal balls 205 have a diameter in a range from 10 nanometers to 200 nanometers. When the diameter of the metal balls 205 is between 10 nm and 200 nm, the metal balls can be distributed relatively uniformly, and the conductive film formed by the metal balls after being contacted with each other has excellent conductivity, so that the metal balls in other non-conductive regions are not contacted with each other to influence the driving of the LED chip 206. The metal ball 205 is made of gold, silver, or an alloy containing gold and/or silver. Specifically, the metal balls 205 have a distribution density ranging from 10000 per square centimeter to 100000 per square centimeter.
In one embodiment, the distance between the LED chips 206 is greater than 0 and less than 0.5 mm. The LED chips 206 provided in the embodiment of the present invention are Mini LED chips or Micro LED chips (Micro LED chips), and are driven by the thin film transistor layer, so that MOS transistors are not required to be disposed, and small-pitch distribution can be achieved, the pitch between the LED chips 206 is reduced, the number of LED chips disposed on a display panel of the same size is increased, the resolution of the display panel is improved, and the display effect is improved.
In one embodiment, the plurality of LED chips 206 includes a red LED chip 2061, a green LED chip 2062, and a blue LED chip 2063.
The embodiment of the invention also provides a display device which comprises the driving chip and the display panel. The display device provided by the embodiment of the invention can be as follows: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital camera, a navigator and the like.
In summary, in the method for manufacturing a display panel according to the embodiment of the present invention, a black organic adhesive layer is prepared on a thin film transistor layer and a metal contact electrode, the black organic adhesive layer includes a plurality of metal balls, an LED chip is disposed on the black organic adhesive layer, and the LED chip is pressed with a first force, at this time, a first electrode and a second electrode of the LED chip are conducted with the metal contact electrode through a conductive region formed by the metal balls in the black organic adhesive layer contacting each other, so that the LED chip can be driven by the thin film transistor layer, the problem that lines and devices of the thin film transistor are easily scratched by steel mesh printing in a process of die bonding of an existing display panel by using a welding method can be avoided, the production yield is improved, and the technical problem that the display panel in the prior art is easily scratched by steel mesh printing solder, resulting in a low production yield is solved, and the technical problems of low production efficiency and limited scratch resistance of the coating protective layer exist.
The display panel and the method for manufacturing the display panel according to the embodiment of the invention are described in detail above. It should be understood that the exemplary embodiments described herein should be considered merely illustrative for facilitating understanding of the method of the present invention and its core ideas, and not restrictive.
Claims (10)
1. A method of manufacturing a display panel including a light-emitting region and a non-light-emitting region, the method comprising the steps of:
providing a substrate base plate;
preparing a thin film transistor layer on the substrate and corresponding to the non-light-emitting region;
preparing a plurality of metal contact electrodes on the substrate and corresponding to the light emitting areas, wherein the metal contact electrodes are respectively electrically connected with the thin film transistor layer;
preparing a black organic adhesive layer on the thin film transistor layer and the metal contact electrode, wherein the black organic adhesive layer comprises a plurality of metal balls;
placing a plurality of LED chips on the black organic adhesive layer corresponding to the light emitting area, wherein each LED chip corresponds to two metal contact electrodes, and pressing the plurality of LED chips by using a first force to enable the black organic adhesive layer between the first electrode and the second electrode of each LED chip and the corresponding metal contact electrodes to form conductive areas so as to respectively enable the first electrode and the second electrode to be conducted with the corresponding metal contact electrodes; and
and preparing packaging glue on the black organic glue layer, wherein the packaging glue covers the LED chips.
2. The method for manufacturing a display panel according to claim 1, wherein the black organic adhesive layer is made of nitrile rubber, chloroprene rubber, or silicone rubber.
3. The method of manufacturing a display panel according to claim 2, wherein the thickness of the black organic glue layer is in a range of 1 to 20 μm.
4. The method of manufacturing a display panel according to claim 1, wherein the metal balls have a diameter ranging from 10 nm to 200 nm.
5. The method of manufacturing a display panel according to claim 1, wherein the first force is in a range of 0.1 mpa to 1 mpa.
6. A display panel including a light-emitting region and a non-light-emitting region, characterized by further comprising:
a substrate base plate;
the thin film transistor layer is positioned on the substrate and is arranged corresponding to the non-luminous area;
the metal contact electrodes are arranged on the substrate corresponding to the light emitting areas and are electrically connected with the thin film transistor layer;
the black organic adhesive layer is positioned above the thin film transistor layer and the metal contact electrode and comprises a plurality of metal balls;
the plurality of LED chips are positioned on the black organic glue layer and arranged corresponding to the light emitting areas, wherein each LED chip comprises a first electrode and a second electrode; and
the packaging adhesive is positioned on the black organic adhesive layer and covers the LED chips;
the first electrode and the second electrode are respectively arranged corresponding to the metal contact electrodes, and the black organic adhesive layer between the first electrode and the second electrode and the metal contact electrodes is a pressed conductive area, so that the first electrode and the second electrode are conducted with the corresponding metal contact electrodes.
7. The display panel according to claim 6, wherein a material of the black organic glue layer is nitrile rubber, chloroprene rubber, or silicone rubber.
8. The display panel of claim 7, wherein the thickness of the black organic glue layer ranges from 1 micron to 20 microns.
9. The display panel of claim 6, wherein the metal balls have a diameter in a range of 10 nm to 200 nm.
10. The display panel according to claim 6, wherein a material of the metal balls is gold, silver, or an alloy containing gold and/or silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011614256.3A CN112768590A (en) | 2020-12-30 | 2020-12-30 | Preparation method of display panel and display panel |
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| CN202011614256.3A CN112768590A (en) | 2020-12-30 | 2020-12-30 | Preparation method of display panel and display panel |
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| CN112768590A true CN112768590A (en) | 2021-05-07 |
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| CN202011614256.3A Pending CN112768590A (en) | 2020-12-30 | 2020-12-30 | Preparation method of display panel and display panel |
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