CN110265522A - The manufacturing method of display panel, display device and display panel - Google Patents
The manufacturing method of display panel, display device and display panel Download PDFInfo
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- CN110265522A CN110265522A CN201910572251.XA CN201910572251A CN110265522A CN 110265522 A CN110265522 A CN 110265522A CN 201910572251 A CN201910572251 A CN 201910572251A CN 110265522 A CN110265522 A CN 110265522A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 144
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 110
- 238000003466 welding Methods 0.000 claims abstract description 65
- 239000011159 matrix material Substances 0.000 claims description 27
- 230000005611 electricity Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 9
- 230000003760 hair shine Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides the manufacturing method of a kind of display panel, display device and display panel.Display panel includes underlay substrate, transistor array layer, micro-led, negative photoresist layer；Transistor array layer is located on underlay substrate；Transistor array layer includes the conductive welding disk far from underlay substrate side；Micro-led, negative photoresist layer is all located at transistor array layer far from underlay substrate side；Conductive welding disk is electrically connected with micro-led；Negative photoresist layer is around micro-led.Transistor array layer driving is micro-led to shine.Negative photoresist layer contacts light emitting diode, and then fixation is micro-led；The fixed micro-led active force of negative photoresist layer is very big, in order to avoid the micro-led conductive welding disk being detached from transistor array layer easily.Micro-led transhipment will not collide other film layers except conductive welding disk of the transistor array layer far from underlay substrate side, and micro-led transhipment not will cause damage.
Description
[technical field]
The present invention relates to the manufactures of field of display technology more particularly to a kind of display panel, display device and display panel
Method.
[background technique]
The display panel used in mobile phone, tablet computer, TV mainly includes liquid crystal display panel and organic light emission
Display panel.But wearable device, 3D projection device, VR/AR show that the resolution of equipment requirement and stability are higher and higher, liquid
LCD panel and organic light emitting display panel are not able to satisfy the need of high-res display screen increasingly due to technique and material
It wants, therefore the research and development and manufacture of micro-led display screen become more and more important.Micro-led display screen refers to
Be high density fine-scale integrated on one panel light emitting diode matrix, light emitting diode is located at the picture of display screen
Make in element each pixel can addressing, be operated alone and light, pixel interval is dropped into micron order from grade.But
In prior art, micro-led yield is bad.
[summary of the invention]
In order to solve the above technical problem, the present invention provides the manufactures of a kind of display panel, display device and display panel
Method.
In a first aspect, the present invention provides a kind of display panel, including underlay substrate, transistor array layer, miniature luminous two
Pole pipe, negative photoresist layer；
The transistor array layer is located on the underlay substrate；
The transistor array layer includes the conductive welding disk far from the underlay substrate side；
Micro-led, the described negative photoresist layer is all located at the transistor array layer far from the underlay substrate
Side；
The conductive welding disk micro-led is electrically connected with described；
The negative photoresist layer is around described micro-led.
Optionally, the negative photoresist layer surrounds the conductive welding disk.
Optionally, the surface of the micro-led separate underlay substrate side and the negative photoresist layer are separate
The surface of the underlay substrate side flushes.
Optionally, the display panel further includes metallic reflector；
The metallic reflector is located at the transistor array layer far from the underlay substrate side, the metallic reflector
Around the negative photoresist layer and described micro-led.
Optionally, the interface of the metallic reflector and the negative photoresist layer is reflective surface, and the reflective surface is towards institute
The inclination of metallic reflector side is stated, at the metallic reflector side between the reflective surface and the transistor array layer
Angle is 40 ° to 60 °.
Optionally, the surface of the micro-led separate underlay substrate side, the negative photoresist layer are separate
The surface of the underlay substrate side is flushed with the metallic reflector far from the surface of the underlay substrate side.
Optionally, the display panel further includes black matrix"；
The black matrix" is located at the metallic reflector far from the underlay substrate side, and the black matrix" covers institute
State metallic reflector.
Optionally, the described micro-led and described negative photoresist layer of the black matrix" exposure.
Optionally, the transistor array layer includes pixel-driving circuit；
It is described micro-led overlapping with the pixel-driving circuit.
Optionally, the conductive welding disk is prominent on the transistor array layer.
Second aspect, the present invention provide a kind of display device, including the display panel.
The third aspect, the present invention provide a kind of manufacturing method of display panel, comprising:
Underlay substrate is provided；
Transistor array layer is formed on the underlay substrate；
Formed it is micro-led in the transistor array layer far from the underlay substrate side；
Negative photoresist layer is formed in the transistor array layer far from the underlay substrate side；
Wherein, the transistor array layer includes the conductive welding disk far from the underlay substrate side；
It is described micro-led to be electrically connected with the conductive welding disk；
The negative photoresist layer is around described micro-led.
Optionally, the manufacturing method of the display panel further include:
Metallic reflector is formed in the transistor array layer far from the underlay substrate side；
Wherein, the metallic reflector is around the negative photoresist layer and described micro-led.
Optionally, the manufacturing method of the display panel further include:
Black matrix" is formed in the metallic reflector far from the underlay substrate side；
Wherein, the black matrix" covers the metallic reflector.
In the present invention, transistor array layer is electrically connected micro-led by conductive welding disk.Transistor array layer
Drive current through conductive welding disk be transferred to it is micro-led.Transistor array layer drives micro-led direction
It shines far from underlay substrate side.At transistor array layer is far from underlay substrate side, negative photoresist layer is around miniature luminous two
Pole pipe.Negative photoresist layer contacts light emitting diode, and then fixation is micro-led.Negative photoresist layer and it is micro-led it
Between contact surface be greater than transistor array layer on conductive welding disk and it is micro-led between contact surface.Although transistor
Array layer is micro-led by conductive welding disk fixation, but transistor array layer is fixed miniature luminous by conductive welding disk
The active force very little of diode.The fixed micro-led active force of negative photoresist layer is very big, so as not to it is micro-led
The conductive welding disk being detached from transistor array layer easily.Wherein, micro-led that transistor array is formed in by transhipment
Layer is far from underlay substrate side.Micro-led transhipment is to be formed in transistor array layer far from substrate in negative photoresist layer
Before substrate side.At this point, transistor array layer far from underlay substrate side only have conductive welding disk without negative photoresist layer etc. its
His film layer.Micro-led transhipment will not collide except conductive welding disk of the transistor array layer far from underlay substrate side
Other film layers, micro-led transhipment not will cause damage.
[Detailed description of the invention]
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this field
For those of ordinary skill, without creative efforts, it can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is the structural schematic diagram of prior art display panel 100；
Fig. 2 is the structural schematic diagram of display panel of the embodiment of the present invention 200；
Fig. 3 is structural schematic diagram of the display panel of the embodiment of the present invention 200 at AA ' in Fig. 2；
Fig. 4 is another structural schematic diagram of display panel of the embodiment of the present invention 200；
Fig. 5 is structural schematic diagram of the display panel of the embodiment of the present invention 200 at BB ' in Fig. 4；
Fig. 6 is another structural schematic diagram of display panel of the embodiment of the present invention 200；
Fig. 7 is structural schematic diagram of the display panel of the embodiment of the present invention 200 at CC ' in Fig. 6；
Fig. 8 is another structural schematic diagram of display panel of the embodiment of the present invention 200；
Fig. 9 is the structural schematic diagram of display device of the embodiment of the present invention 300；
Figure 10 is the process schematic of the manufacturing method 400 of display panel of the embodiment of the present invention；
Figure 11 is another process schematic of the manufacturing method 400 of display panel of the embodiment of the present invention.
[specific embodiment]
For a better understanding of the technical solution of the present invention, being retouched in detail to the embodiment of the present invention with reference to the accompanying drawing
It states.
It will be appreciated that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
Its embodiment, shall fall within the protection scope of the present invention.
The term used in embodiments of the present invention is only to be not intended to be limiting merely for for the purpose of describing particular embodiments
The present invention.In the embodiment of the present invention and the "an" of singular used in the attached claims, " described " and "the"
It is also intended to including most forms, unless the context clearly indicates other meaning.
It should be appreciated that term "and/or" used herein is only a kind of incidence relation for describing affiliated partner, indicate
There may be three kinds of relationships, for example, A and/or B, can indicate: individualism A, exist simultaneously A and B, individualism B these three
Situation.In addition, character "/" herein, typicallys represent the relationship that forward-backward correlation object is a kind of "or".
It will be appreciated that though device may be described in embodiments of the present invention using term first, second etc., but these
Device should not necessarily be limited by these terms.These terms are only used to for device being distinguished from each other out.For example, not departing from the embodiment of the present invention
In the case where range, first device can also be referred to as second device, and similarly, second device can also be referred to as the first dress
It sets.
Fig. 1 is the structural schematic diagram of prior art display panel 100.
As shown in Figure 1, in the prior art, display panel 100 includes multiple micro-led 110.Wherein, miniature
Light emitting diode 110 is formed on display panel 100 by transhipment.But.Micro-led 110 transhipment is easy to damage
Other film layers on display panel 100, so that the yield of display panel 100 reduces.
In order to solve the above technical problem, the present invention provides the manufactures of a kind of display panel, display device and display panel
Method.
Fig. 2 is the structural schematic diagram of display panel of the embodiment of the present invention 200；Fig. 3 is display surface of the embodiment of the present invention in Fig. 2
Structural schematic diagram of the plate 200 at AA '.
As shown in Figure 2,3, display panel 200 include underlay substrate 210, it is transistor array layer 220, micro-led
230, negative photoresist layer 240；Transistor array layer 220 is located on underlay substrate 210；Transistor array layer 220 includes far from substrate
The conductive welding disk 221 of 210 side of substrate；Micro-led 230, it is remote to be all located at transistor array layer 220 for negative photoresist layer 240
From 210 side of underlay substrate；Conductive welding disk 221 is electrically connected with micro-led 230；Negative photoresist layer 240 surrounds miniature hair
Optical diode 230.
In embodiments of the present invention, transistor array layer 220 is electrically connected micro-led by conductive welding disk 221
230.The conductive welding disk 221 that drives current through of transistor array layer 220 is transferred to micro-led 230.Transistor array
Column layer 220 drives micro-led 230 to be directed away from 210 side of underlay substrate and shines.It is separate in transistor array layer 220
At 210 side of underlay substrate, negative photoresist layer 240 surrounds micro-led 230.Negative photoresist layer 240 contacts light emitting diode
230, and then fixed micro-led 230.Contact surface between negative photoresist layer 240 and micro-led 230 is greater than
The contact surface between conductive welding disk 221 and micro-led 230 on transistor array layer 220.Although transistor array
Layer 220 is by conductive welding disk 221 fixed micro-led 230, but transistor array layer 220 passes through conductive welding disk 221
Fixed micro-led 230 active force very little.The active force of negative photoresist layer 240 fixed micro-led 230 is very
Greatly, in order to avoid micro-led 230 are detached from the conductive welding disk 221 on transistor array layer 220 easily.Wherein, miniature to shine
Diode 230 is formed in transistor array layer 220 far from 210 side of underlay substrate by transhipment.Micro-led 230
Transhipment is before negative photoresist layer 240 is formed in transistor array layer 220 far from 210 side of underlay substrate.At this point, transistor array
Column layer 220 only has conductive welding disk 221 without other film layers such as negative photoresist layers 240 far from 210 side of underlay substrate.It is miniature to shine
The transhipment of diode 230 will not collide except conductive welding disk 221 of the transistor array layer 220 far from 210 side of underlay substrate
Other film layers, micro-led 230 transhipment not will cause damage.
As shown in Figure 2,3, negative photoresist layer 240 surrounds conductive welding disk 221.
In embodiments of the present invention, transistor array layer 220 is electrically connected micro-led by conductive welding disk 221
230, negative photoresist layer 240 surrounds conductive welding disk 221.Negative photoresist layer 240 separates the conductive welding disk 221 on transistor array layer 220
With other conductive film layers except micro-led 230, in order to avoid conductive welding disk 221 on transistor array layer 220 with it is micro-
Other conductive film layers short circuit except type light emitting diode 230.Negative photoresist layer 240 separates multiple on transistor array layer 220
Conductive welding disk 221, in case multiple conductive welding disks 221 on transistor array layer 220 short cut with each other.Then, transistor array layer
220 drive multiple micro-led 230 to be directed away from 210 side of underlay substrate hair by multiple conductive welding disks 221 respectively
Light.
As shown in Figure 2,3, micro-led 230 surface far from 210 side of underlay substrate and negative photoresist layer 240 are remote
Surface from 210 side of underlay substrate flushes.
In embodiments of the present invention, negative photoresist layer 240 is remote around micro-led 230, micro-led 230
Surface from 210 side of underlay substrate is flushed with negative photoresist layer 240 far from the surface of 210 side of underlay substrate.Negative photoresist layer 240
Micro-led 230 are only exposed far from 210 side top surface of underlay substrate, so that micro-led 230 pass through far
Emit light from 210 side top surface of underlay substrate.Negative photoresist layer 240 is with micro-led 230 far from underlay substrate 210 1
Other surfaces except the top surface of side completely attach to.Contact surface between negative photoresist layer 240 and micro-led 230 expands,
The active force of negative photoresist layer 240 fixed micro-led 230 becomes larger, in case micro-led 230 are detached from transistor
Conductive welding disk 221 on array layer 220.Negative photoresist layer 240 is not micro-led 230 far from underlay substrate 210 1
Prominent at side, thickness of the negative photoresist layer 240 in the vertical direction of underlay substrate 210 is smaller, to save negative photoresist layer 240
Negative photoresist.
Fig. 4 is another structural schematic diagram of display panel of the embodiment of the present invention 200；Fig. 5 is that the embodiment of the present invention is aobvious in Fig. 4
Show structural schematic diagram of the panel 200 at BB '.
As shown in Figure 4,5, display panel 200 further includes metallic reflector 250；Metallic reflector 250 is located at transistor array
Column layer 220 surrounds negative photoresist layer 240 and micro-led 230 far from 210 side of underlay substrate, metallic reflector 250.
In embodiments of the present invention, at transistor array layer 220 is far from 210 side of underlay substrate, metallic reflector 250
Around negative photoresist layer 240 and micro-led 230.Micro-led 230 are not only directed away from underlay substrate 210 1
Side emits light, and emits light towards negative photoresist layer 240.The light of micro-led 230 transmitting penetrates negative photoresist
Layer 240, and 210 1 lateral reflection of underlay substrate is directed away from metallic reflector 250.Micro-led 230 direction
Light far from the outgoing of 210 side of underlay substrate increases, and micro-led 230 are directed away from 210 side of underlay substrate
Light emission rate improves.Negative photoresist layer 240 between micro-led 230 and metallic reflector 250, negative photoresist layer 240 every
Micro-led 230 and metallic reflector 250 are opened, in case micro-led 230 is short-circuit with metallic reflector 250.
Meanwhile negative photoresist layer 240 is located between the conductive welding disk 221 and metallic reflector 250 on transistor array layer 220, negative photoresist
Layer 240 separates conductive welding disk 221 and metallic reflector 250 on transistor array layer 220, in order to avoid on transistor array layer 220
Conductive welding disk 221 and the short circuit of metallic reflector 250.
As shown in Figure 4,5, the interface of metallic reflector 250 and negative photoresist layer 240 is reflective surface 251,251 court of reflective surface
It is tilted to 250 side of metallic reflector, at 250 side of metallic reflector between reflective surface 251 and transistor array layer 220
Angle is 40 ° to 60 °.
In embodiments of the present invention, the reflective surface 251 between metallic reflector 250 and negative photoresist layer 240 is anti-towards metal
The inclination of 250 side of layer is penetrated, the angle at 250 side of metallic reflector between reflective surface 251 and transistor array layer 220 is
40 ° to 60 °.On the one hand, the angle at 250 side of metallic reflector between reflective surface 251 and transistor array layer 220 is less than
Or it is equal to 60 °, reflective surface 251 is larger relative to the gradient of the vertical direction of transistor array layer 220, miniature light-emitting diodes
Pipe 230 emits light towards negative photoresist layer 240 and metallic reflector 250, these light are through negative photoresist layer 240 and therein
The overwhelming majority is directed away from 210 1 lateral reflection of underlay substrate at metallic reflector 250.Micro-led 230 towards far
Light from the outgoing of 210 side of underlay substrate substantially increases, and micro-led 230 are directed away from 210 side of underlay substrate
Light emission rate greatly improve.On the other hand, at 250 side of metallic reflector between reflective surface 251 and transistor array layer 220
Angle be more than or equal to 40 °, gradient and only of the reflective surface 251 relative to the vertical direction of transistor array layer 220
Greatly, adjacent two it is micro-led the distance between 230 not too big, to ensure the high-resolution of display panel 200
Rate.
As shown in Figure 4,5, micro-led 230 surfaces far from 210 side of underlay substrate, negative photoresist layer 240 are remote
Surface from 210 side of underlay substrate is flushed with metallic reflector 250 far from the surface of 210 side of underlay substrate.
In embodiments of the present invention, micro-led 230 surfaces far from 210 side of underlay substrate, negative photoresist layer
240 surface far from 210 side of underlay substrate is flushed with metallic reflector 250 far from the surface of 210 side of underlay substrate.Metal
Surface of the reflecting layer 250 far from 210 side of underlay substrate is simultaneously not less than negative photoresist layer 240 or micro-led 230 far
Surface from 210 side of underlay substrate, the reflective surface 251 between metallic reflector 250 and negative photoresist layer 240 is larger, miniature hair
Optical diode 230 emits light towards negative photoresist layer 240 and metallic reflector 250, these light through negative photoresist layer 240 and
The overwhelming majority therein is directed away from 210 1 lateral reflection of underlay substrate at metallic reflector 250.Micro-led 230
The light for being directed away from the outgoing of 210 side of underlay substrate substantially increases, and micro-led 230 are directed away from underlay substrate
The light emission rate of 210 sides greatly improves.Metallic reflector 250 is not above negative photoresist far from the surface of 210 side of underlay substrate
240 or micro-led 230 surface far from 210 side of underlay substrate of layer, metallic reflector 250 is in underlay substrate
Thickness in 210 vertical direction is smaller, to save the metal material of metallic reflector 250.
Fig. 6 is another structural schematic diagram of display panel of the embodiment of the present invention 200；Fig. 7 is that the embodiment of the present invention is aobvious in Fig. 6
Show structural schematic diagram of the panel 200 at CC '.
As shown in Figure 6,7, display panel 200 further includes black matrix" 260；Black matrix" 260 is located at metallic reflector 250
Far from 210 side of underlay substrate, black matrix" 260 covers metallic reflector 250.
In embodiments of the present invention, black matrix" 260 is located at metallic reflector 250 far from 210 side of underlay substrate, black
Matrix 260 covers metallic reflector 250.It is miniature luminous that metallic reflector 250 is not only directed away from 210 1 lateral reflection of underlay substrate
The light that diode 230 emits, and it is directed away from 210 side extraneous ray of reflecting of underlay substrate.Black matrix" 260 is in metal
Reflecting layer 250 stops ambient to reach metallic reflector 250 far from absorption ambient at 210 side of underlay substrate.
It thus is avoided that metallic reflector 250 is directed away from 210 side extraneous ray of reflecting of underlay substrate interference micro-led 230
It is directed away from 210 side emergent ray of underlay substrate.
As shown in Figure 6,7, the exposure of black matrix" 260 micro-led 230 and negative photoresist layer 240.
In embodiments of the present invention, the exposure of black matrix" 260 micro-led 230 and negative photoresist layer 240, so that hair
The light that optical diode 230 emits is directed away from micro-led 230 top surface or the top surface of negative photoresist layer 240
The outgoing of 210 side of underlay substrate.Wherein, micro-led 230 it is directed away from 210 side of underlay substrate transmitting light, this
A little light are directed away from the outgoing of 210 side of underlay substrate at micro-led 230 top surface.It is micro-led
230 emit light towards negative photoresist layer 240, these light are first for the first time through negative photoresist layer 240 in negative photoresist layer 240 and gold
Belong to and be directed away from 210 1 lateral reflection of underlay substrate at the interface in reflecting layer 250, then exists through negative photoresist layer 240 for second
The outgoing of 210 side of underlay substrate is directed away from the top surface of negative photoresist layer 240.
Fig. 8 is another structural schematic diagram of display panel of the embodiment of the present invention 200.
As shown in figure 8, transistor array layer 220 includes pixel-driving circuit；Micro-led 230 and pixel driver
Circuit is overlapping.
In embodiments of the present invention, it micro-led 230 is handed over the pixel-driving circuit in transistor array layer 220
It is folded.Pixel-driving circuit driving micro-led 230 in transistor array layer 220 shines.Micro-led 230
It is not only directed away from 210 side of underlay substrate transmitting light, and emits light towards transistor array layer 220.It is miniature to shine
The light that diode 230 emits is directed away from 210 side of underlay substrate at the pixel-driving circuit in transistor array layer 220
Reflection.Micro-led 230 light for being directed away from the outgoing of 210 side of underlay substrate increase, and micro-led 230
The light emission rate for being directed away from 210 side of underlay substrate improves.
As shown in Fig. 2 to 8, conductive welding disk 221 is prominent on transistor array layer 220.
In embodiments of the present invention, conductive welding disk 221 is prominent on transistor array layer 220, and micro-led 230
Transistor array layer 220 is transported to far from 210 side of underlay substrate, so that conductive welding disk 221 and micro-led 230 electricity
Connection.Micro-led 230 transhipment is to be formed in transistor array layer in negative photoresist layer 240 and metallic reflector 250
Before 220 far from 210 side of underlay substrate.At this point, transistor array layer 220 only has conductive weldering far from 210 side of underlay substrate
Disk 221 is without other film layers such as negative photoresist layer 240 and metallic reflector 250.Micro-led 230 transhipment will not touch
Hit other film layers except conductive welding disk 221 of the transistor array layer 220 far from 210 side of underlay substrate, miniature light-emitting diodes
The transhipment of pipe 230 not will cause damage.
Fig. 9 is the structural schematic diagram of display device of the embodiment of the present invention 300.
As shown in figure 9, display device 300 includes display panel 200.
In embodiments of the present invention, display device 300 using display panel 200 realize display, such as smart phone or
Similar device.Display panel 200 is as described above, repeat no more.
Figure 10 is the process schematic of the manufacturing method 400 of display panel of the embodiment of the present invention.
As shown in Figure 10, the manufacturing method 400 of display panel includes:
Step S410 provides underlay substrate 210；
Step S420 forms transistor array layer 220 on underlay substrate 210；
Step S430 forms micro-led 230 in transistor array layer 220 far from 210 side of underlay substrate；
Step S440 forms negative photoresist layer 240 in transistor array layer 220 far from 210 side of underlay substrate；
Wherein, transistor array layer 220 includes the conductive welding disk 221 far from 210 side of underlay substrate；Miniature light-emitting diodes
Pipe 230 is electrically connected with conductive welding disk 221；Negative photoresist layer 240 surrounds micro-led 230.
In embodiments of the present invention, transistor array layer 220 is electrically connected micro-led by conductive welding disk 221
230.The conductive welding disk 221 that drives current through of transistor array layer 220 is transferred to micro-led 230.Transistor array
Column layer 220 drives micro-led 230 to shine.In transistor array layer 220 far from 210 side of underlay substrate, negative photoresist
Layer 240 surrounds micro-led 230.Negative photoresist layer 240 contacts light emitting diode 230, and then fixed miniature light-emitting diodes
Pipe 230.The contact surface of negative photoresist layer 240 and micro-led 230 is greater than conductive welding disk 221 on transistor array layer 220
With micro-led 230 contact surface.Although transistor array layer 220 passes through conductive welding disk 221 fixed miniature luminous two
Pole pipe 230, but transistor array layer 220 passes through the active force very little of conductive welding disk 221 fixed micro-led 230.
The active force of negative photoresist layer 240 fixed micro-led 230 is very big, in case micro-led 230 are detached from crystalline substance easily
Conductive welding disk 221 on body pipe array layer 220.Wherein, micro-led 230 transistor array layer is formed in by transhipment
220 far from 210 side of underlay substrate.Micro-led 230 transhipment is to be formed in transistor array in negative photoresist layer 240
Before layer 220 is far from 210 side of underlay substrate.At this point, transistor array layer 220 only has conduction far from 210 side of underlay substrate
Pad 221 is without other film layers such as negative photoresist layers 240.Micro-led 230 transhipment will not collide transistor array
Other film layers except 220 conductive welding disk 221 far from 210 side of underlay substrate of layer, micro-led 230 transhipment is not
It will cause damage.
Figure 11 is another process schematic of the manufacturing method 400 of display panel of the embodiment of the present invention.
As shown in figure 11, the manufacturing method 400 of display panel further include:
Step S450 forms metallic reflector 250 in transistor array layer 220 far from 210 side of underlay substrate；
Wherein, metallic reflector 250 surrounds negative photoresist layer 240 and micro-led 230.
In embodiments of the present invention, metallic reflector 250 is formed in transistor array layer 220 far from underlay substrate 210 1
The step of side is to form negative photoresist layer 240 after the step of transistor array layer 220 is far from 210 side of underlay substrate.?
Transistor array layer 220 far from 210 side of underlay substrate at, metallic reflector 250 around negative photoresist layer 240 and it is miniature shine two
Pole pipe 230.Micro-led 230 are not only directed away from 210 side of underlay substrate transmitting light, and towards negative photoresist layer
240 transmitting light.The light of micro-led 230 transmitting penetrates negative photoresist layer 240, and at metallic reflector 250
It is directed away from 210 1 lateral reflection of underlay substrate.Micro-led 230 are directed away from the light of 210 side of underlay substrate outgoing
Line becomes more, and micro-led 230 light emission rates for being directed away from 210 side of underlay substrate improve.Negative photoresist layer 240 is located at micro-
Between type light emitting diode 230 and metallic reflector 250, negative photoresist layer 240 separates micro-led 230 and metallic reflection
Layer 250, in case micro-led 230 is short-circuit with metallic reflector 250.Meanwhile negative photoresist layer 240 is located at transistor array
Between conductive welding disk 221 and metallic reflector 250 on layer 220, negative photoresist layer 240 separates leading on transistor array layer 220
Electrical bonding pads 221 and metallic reflector 250, in case the conductive welding disk 221 and metallic reflector 250 on transistor array layer 220 are short
Road.
As shown in figure 11, the manufacturing method 400 of display panel further include:
Step S460 forms black matrix" 260 in metallic reflector 250 far from 210 side of underlay substrate；
Wherein, black matrix" 260 covers metallic reflector 250.
In embodiments of the present invention, black matrix" 260 is formed in metallic reflector 250 far from 210 side of underlay substrate
Step is to form metallic reflector 250 after the step of transistor array layer 220 is far from 210 side of underlay substrate.Black
Matrix 260 is located at metallic reflector 250 far from 210 side of underlay substrate, and black matrix" 260 covers metallic reflector 250.Metal
Reflecting layer 250 is not only directed away from the light of micro-led 230 transmitting of 210 1 lateral reflection of underlay substrate, and direction
Far from 210 side extraneous ray of reflecting of underlay substrate.Black matrix" 260 is in metallic reflector 250 far from 210 side of underlay substrate
Place absorbs ambient, and ambient is stopped to reach metallic reflector 250.It thus is avoided that metallic reflector 250 towards remote
The outgoing of 210 side of underlay substrate is directed away from from 210 side extraneous ray of reflecting of underlay substrate interference micro-led 230
Light.
In conclusion the present invention provides the manufacturing method of a kind of display panel, display device and display panel.Display panel
Including underlay substrate, transistor array layer, micro-led, negative photoresist layer；Transistor array layer is located on underlay substrate；
Transistor array layer includes the conductive welding disk far from underlay substrate side；Micro-led, negative photoresist layer is all located at crystal
Pipe array layer is far from underlay substrate side；Conductive welding disk is electrically connected with micro-led；Negative photoresist layer shines around miniature
Diode.Transistor array layer driving is micro-led to shine.Negative photoresist layer contacts light emitting diode, and then fixation is miniature
Light emitting diode；The fixed micro-led active force of negative photoresist layer is very big, in case micro-led be detached from easily
Conductive welding disk on transistor array layer.Micro-led transhipment will not collide transistor array layer far from underlay substrate
Other film layers except the conductive welding disk of side, micro-led transhipment not will cause damage.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent substitution, improvement and etc. done be should be included within the scope of the present invention.
Claims (14)
1. a kind of display panel, which is characterized in that including underlay substrate, transistor array layer, micro-led, negative photoresist
Layer；
The transistor array layer is located on the underlay substrate；
The transistor array layer includes the conductive welding disk far from the underlay substrate side；
Micro-led, the described negative photoresist layer is all located at the transistor array layer far from the underlay substrate one
Side；
The conductive welding disk micro-led is electrically connected with described；
The negative photoresist layer is around described micro-led.
2. display panel according to claim 1, which is characterized in that the negative photoresist layer surrounds the conductive welding disk.
3. display panel according to claim 1, which is characterized in that the micro-led separate substrate base
The surface of plate side is flushed with the negative photoresist layer far from the surface of the underlay substrate side.
4. display panel according to claim 1, which is characterized in that further include metallic reflector；
The metallic reflector is located at the transistor array layer far from the underlay substrate side, and the metallic reflector surrounds
The negative photoresist layer and described micro-led.
5. display panel according to claim 4, which is characterized in that the friendship of the metallic reflector and the negative photoresist layer
Interface is reflective surface, and the reflective surface is tilted towards the metallic reflector side, described at the metallic reflector side
Angle between reflective surface and the transistor array layer is 40 ° to 60 °.
6. display panel according to claim 4, which is characterized in that the micro-led separate substrate base
The surface of plate side, surface of the negative photoresist layer far from the underlay substrate side and the metallic reflector are far from the lining
The surface of substrate side flushes.
7. display panel according to claim 4, which is characterized in that further include black matrix"；
The black matrix" is located at the metallic reflector far from the underlay substrate side, and the black matrix" covers the gold
Belong to reflecting layer.
8. display panel according to claim 7, which is characterized in that the black matrix" exposure miniature light-emitting diodes
Pipe and the negative photoresist layer.
9. display panel according to claim 1, which is characterized in that the transistor array layer includes pixel driver electricity
Road；
It is described micro-led overlapping with the pixel-driving circuit.
10. display panel according to claim 1, which is characterized in that the conductive welding disk is in the transistor array layer
Upper protrusion.
11. a kind of display device, which is characterized in that including display panel described in any one of claims 1 to 10.
12. a kind of manufacturing method of display panel characterized by comprising
Underlay substrate is provided；
Transistor array layer is formed on the underlay substrate；
Formed it is micro-led in the transistor array layer far from the underlay substrate side；
Negative photoresist layer is formed in the transistor array layer far from the underlay substrate side；
Wherein, the transistor array layer includes the conductive welding disk far from the underlay substrate side；
It is described micro-led to be electrically connected with the conductive welding disk；
The negative photoresist layer is around described micro-led.
13. the manufacturing method of display panel according to claim 12, which is characterized in that further include:
Metallic reflector is formed in the transistor array layer far from the underlay substrate side；
Wherein, the metallic reflector is around the negative photoresist layer and described micro-led.
14. the manufacturing method of display panel according to claim 13, which is characterized in that further include:
Black matrix" is formed in the metallic reflector far from the underlay substrate side；
Wherein, the black matrix" covers the metallic reflector.
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