US20190148348A1 - Elastomeric layer fabrication for light emitting diodes - Google Patents
Elastomeric layer fabrication for light emitting diodes Download PDFInfo
- Publication number
- US20190148348A1 US20190148348A1 US16/164,629 US201816164629A US2019148348A1 US 20190148348 A1 US20190148348 A1 US 20190148348A1 US 201816164629 A US201816164629 A US 201816164629A US 2019148348 A1 US2019148348 A1 US 2019148348A1
- Authority
- US
- United States
- Prior art keywords
- led dies
- led
- photoresist
- light
- dies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 187
- 239000000758 substrate Substances 0.000 claims abstract description 140
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 239000013536 elastomeric material Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 41
- 239000010410 layer Substances 0.000 claims description 33
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 230000000717 retained effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 160
- 239000000853 adhesive Substances 0.000 abstract description 11
- 230000001070 adhesive effect Effects 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000000206 photolithography Methods 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- -1 Polydimethylsiloxane Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005629 polypropylene homopolymer Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7565—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
- H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
- H01L2224/75822—Rotational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/81002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/951—Supplying the plurality of semiconductor or solid-state bodies
- H01L2224/95115—Supplying the plurality of semiconductor or solid-state bodies using a roll-to-roll transfer technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Definitions
- the present disclosure relates to semiconductor device fabrication, specifically to placing a conformable material over light emitting diode (LED) dies to facilitate adhesive attachment in display fabrication.
- LED light emitting diode
- LEDs may be moved from one substrate to another. That is, micro-LEDs of different color may be transferred from source substrates where the micro-LEDs were fabricated onto carrier substrates, and then from carrier substrates onto a display substrate including control circuits for controlling the micro-LEDs. Transferring the micro-LEDs from the carrier substrates onto the display substrate may involve picking and placing of LEDs onto desired locations on the display substrate. As the form factor of LED's decreases, the picking and placing of LEDs into desired arrangements and without damaging the LED dies becomes increasingly difficult.
- Embodiments relate to forming an elastomeric interface layer (elayer) over multiple light emitting diode (LED) dies by depositing photoresist materials across multiple LED dies, and using the LED dies as a photolithography mask to facilitate formation of the elayer on each LED die.
- the elayers facilitate adhesion with a pick-up head for pick and place operation during the manufacturing of an electronic display.
- a photoresist material on and between light emitting diode (LED) dies is deposited on a carrier substrate.
- the photoresist material may be a negative photoresist material that becomes insoluble when exposed to light.
- After depositing the photoresist material light is applied through the carrier substrate towards the LED dies and the deposited photoresist material. A portion of the light incident on the LED dies is absorbed by the LED dies to retain soluble first portions of the photoresist material on the LED dies. Other portions of photoresist material between the LED dies are exposed to the light, causing second portions of the photoresist material between the LED dies to become insoluble.
- the soluble first portions of photoresist material on the LED dies are removed, such as by dissolving in a photoresist developer.
- an elastomeric material is deposited on each LED die and between the second portions of photoresist.
- the second portions of the photoresist material are removed after depositing the elastomeric material.
- the elastomeric material remaining on the LED dies forms elastomeric interface layers on the LED dies to facilitate adhesion with a pick and place head (PPH) (or a “pick-up head”).
- PPH pick and place head
- At least a portion of the LED dies on the carrier substrate can be picked up by attaching a non-conformable pick-up head to the elastomeric interface layers over the LED dies. At least a portion of the LED dies attached to the non-conformable pick-up head are placed on a display substrate defining pixel control circuits of an electronic display.
- the first portions of photoresist material are removed by dissolving the first portions with a first solvent.
- the first solvent may be a photoresist developer.
- the second portions of the photoresist material are used as molds for forming the elastomeric layers, and then removed, such as by dissolving the second portions of the photoresist material with a second solvent different from the first solvent, such as a photoresist stripping material that removes insoluble photoresist material.
- the first solvent is benign to the second portions of the photoresist material
- the second solvent is benign to the elastomeric material forming the elastomeric interface layers on the LED dies.
- the second portions of photoresist material are removed by applying light to cause the second portions to become soluble, and then dissolving the second portions using the same solvent used in dissolving the first portions of photoresist material.
- the LED dies are micro-LED (mLED) dies.
- an elastomeric interface layer is formed over multiple vertical-cavity surface-emitting lasers (VCSELs), or other types of LEDs.
- the LED dies include Gallium nitride (GaN), gallium arsenide (GaAs), or gallium phosphide (GaP).
- the LED dies absorb Ultraviolet (UV) light incident on the LED dies through the carrier substrate.
- an electronic display panel is fabricated.
- a photoresist material is deposited on and between light emitting diode (LED) dies on a carrier substrate. Light is applied through the carrier substrate towards the LED dies and the deposited photoresist material, responsive to depositing the photoresist material. A portion of the light incident on the LED dies is absorbed by the LED dies to retain soluble first portions of the photoresist material on the LED dies. Other portions of photoresist material between the LED dies are exposed to the light to render second portions of the photoresist material between the LED insoluble. The first portions of photoresist material are removed, responsive to applying the light, such as by dissolving with a photoresist developer.
- An elastomeric material is deposited on each LED die and between the second portions of photoresist, responsive to removing the first portions.
- the second portions of the photoresist material are removed responsive to depositing the elastomeric material, the elastomeric material forming elastomeric interface layers on the LED dies.
- At least a portion of the LED dies are picked up on the carrier substrate by attaching a non-conformable pick-up head to the elastomeric interface layers over the LED dies.
- the at least a portion of the LED dies attached to the non-conformable pick-up head are placed on a display substrate defining pixel control circuits of an electronic display.
- Some embodiments include using a positive photoresist material that is also an elastomeric material to form elastomeric interface layers on the LED dies.
- a photoresist material is deposited on and between LED dies on a carrier substrate. Light is applied through the carrier substrate towards the LED dies and the photoresist material. A portion of the light incident on the LED dies is absorbed to retain insoluble first portions of the photoresist material on the LED dies insoluble. Second portions of the photoresist material between the LED dies are exposed to another portion of the light to render the second portions soluble.
- the photoresist material may be a positive photoresist that becomes soluble when exposed to the light.
- At least a portion of the LED dies on the carrier substrate are picked up by attaching a non-conformable pick-up head to the elastomeric interface layers over the LED dies.
- the at least a portion of the LED dies attached to the non-conformable pick-up head are placed on a display substrate defining pixel control circuits of an electronic display.
- FIG. 1 is a cross sectional view of LED dies on a carrier substrate with an elastomeric interface layer (elayer) over each LED die, according to one embodiment.
- elayer elastomeric interface layer
- FIG. 4 is a cross sectional view of LED dies on the carrier substrate with negative photoresist material on and between the LED dies, according to one embodiment.
- FIG. 5 is a cross sectional view of the LED dies, with the addition of applied light, according to one embodiment.
- FIG. 6 is a cross sectional view of the LED dies on the carrier substrate with portions of soluble photoresist material and insoluble photoresist material caused by the applied light, according to one embodiment.
- FIG. 7 is a cross sectional view of the LED dies with the portions of soluble photoresist material removed, according to one embodiment.
- FIG. 8 is a cross sectional view of the LED dies including elastomeric material, according to one embodiment.
- FIG. 10 is a cross sectional view of LED dies on the carrier substrate with positive photoresist material on and between the LED dies, according to one embodiment.
- FIG. 11 is a cross sectional view of the LED dies with applied light, according to one embodiment.
- FIG. 12 is a cross sectional view of LED dies on the carrier substrate with portions of soluble photoresist material and other portions of insoluble photoresist material that forms elayers on the LED dies, according to one embodiment.
- FIG. 13 is a display manufacturing system during pick up of LED dies from a carrier substrate, according to one embodiment.
- FIG. 15 is a schematic diagram of a cross section of a micro-LED, according to one embodiment.
- Embodiments relate to depositing an elastomeric interface layer (elayer) over multiple light emitting diode (LED) dies by using photoresist materials rather than physical molds or processes that may damage the elayer or the LED dies.
- the deposited elayer allows each LED to be picked up by a pick-up head (or pick and place head (PPH)), and placed onto a display substrate including control circuits for sub-pixels of an electronic display.
- the LED dies are micro-LED (mLED) dies.
- FIG. 1 is a cross sectional view of LED dies 102 on a carrier substrate 104 with an elastomeric interface layer (elayer) 110 over each LED die 102 , according to one embodiment.
- the LED dies 102 may be fabricated on a source substrate and placed onto the carrier substrate 104 to facilitate pick and place onto a display substrate of an electronic display.
- the carrier substrate 104 may include a substrate 106 on which the LED dies 102 are placed, and an adhesive layer 108 that holds the LED dies 102 on the substrate 106 .
- the elayer 110 is formed on the light emitting side 112 of each LED die 102 .
- the elayer 110 is a conformable layer that allows each of the LED dies 102 to be attached to and picked up by a pick and place head (PPH) (e.g., as discussed in greater detail with reference to FIG. 13 ).
- PPH pick and place head
- the elayer 110 facilitates attachment with non-conformable pick-up surfaces 1304 of the PPH 1302 , or in another example, conformable pick-up surfaces 1304 of a PPH 1302 .
- the elayer 110 may attach to a pick-up surface 1304 due to adhesion forces, such as Van der Waals.
- the elayer 110 may include any material that provides sufficient adhesion to the pick-up surfaces 1304 .
- the elayer 110 includes elastomers, such as Polydimethylsiloxane (PDMS) or Polyurethane (PU).
- the interface layer on the light emitting side 112 of the LED dies 102 contains no elastomeric materials.
- the elayer 110 includes gels that provides adhesion via covalent chemical bonds.
- the elayer 110 may be polymer with viscoelasticity (having both viscosity and elasticity).
- the elayer 110 may also include materials that have weak inter-molecular forces, a low Young's modulus, and/or high failure strain compared with other materials.
- the LED dies 102 may be mLED dies including an epitaxial structure with gallium, such as gallium nitride (GaN), gallium arsenide (GaAs), or gallium phosphide (GaP).
- gallium material of the LED dies may block certain wavelengths of light to serve as a mask for photoresist material used in forming the elayer 110 .
- the method and principles as described with reference to LED dies 102 can be applied to other semiconductor or microelectronic devices.
- an elayer may be formed on a vertical-cavity surface-emitting laser (VCSEL) to facilitate pick and place of the VCSEL.
- VCSEL vertical-cavity surface-emitting laser
- the carrier substrate 104 may have any number of LED dies 102 attached, such as one or more arrays of LED dies.
- the carrier substrate 104 may have a hard flat surface, rigid enough to support the LED dies 102 as the carrier substrate 104 is moved.
- the LED dies 102 are released from the carrier substrate 104 by removing the adhesive 108 (e.g., with a solvent, wet or dry etching, etc.), or weakening the adhesive 108 .
- the adhesive 108 is weak enough that the LED dies 102 may be removed with force (e.g., by a PPH 1302 ) without damaging the LED dies 102 .
- a negative photoresist material is deposited 402 in the regions between the LED dies 102 on the carrier substrate 104 and over the LED dies 102 .
- the LED dies 102 may be evenly spaced apart on the carrier substrate 104 and attached to the carrier substrate 104 via a layer of adhesive 108 .
- the negative photoresist material 402 is a light-sensitive material that is initially soluble and becomes insoluble when exposed to light.
- the negative photoresist material 402 can be removed with a solvent, such as a photoresist developer.
- the negative photoresist material 402 can be mixed with a solvent such that the negative photoresist material 402 is viscous for placement (e.g., via spin coating) onto the LED dies 102 and carrier substrate 104 , and then baked (e.g., soft baking) on the LED dies 102 .
- the open regions between the LED dies 102 may be formed by the use of an expanding carrier film.
- the carrier film is attached to a first side of the LED dies 102 on a native substrate.
- the LED dies 102 may be singulated before or after the carrier film is attached to the LED dies 102 .
- the LED dies 102 are separated by expanding the carrier film to widen the open regions between the LED dies 102 .
- the carrier substrate 104 is applied to a second side of the LED dies 102 .
- the LED dies 102 are attached to the adhesive 108 layer of the carrier substrate 104 with the open regions being defined between the LED dies 102 .
- the carrier film is separated from the first side of the LED dies 102 to expose the first die of the LED dies 102 for formation of the elayer 110 .
- insoluble photoresist material 604 is formed between the LED dies 102 . Because the negative photoresist material 402 is a negative resist, the light 502 renders the photoresist material insoluble, creating the insoluble photoresist material 604 between the LED dies 102 .
- the insoluble photoresist material 604 can be insoluble to a first solvent, such as a photoresist developer, but soluble to a second solvent, such as a photoresist stripper.
- first portions of the negative photoresist material 402 over the LED dies 102 are removed 210 .
- the soluble photoresist material 602 is removed to expose the light emitting side 112 of the LED dies 102 . Since the first portions the negative photoresist material 402 over the LED dies 102 were not exposed to the light 502 , the first portions are soluble photoresist material 602 .
- the soluble photoresist material 602 is soluble to a solvent, such as a photoresist developer like sodium or potassium carbonate solution.
- the solvent is a substance that reacts to remove the soluble photoresist material 602 while being benign to the insoluble photoresist material 604 .
- the solvent is a liquid that dissolves the soluble photoresist material 602 .
- FIG. 9 is a flowchart of a method 900 for forming an elayer 110 over LED dies 102 on the carrier substrate 104 , according to one embodiment.
- the method 900 includes a positive material that forms the elayer 110 over the LED dies 102 .
- the method 900 provides for simultaneous formation of an elayer 110 on multiple LED dies 102 without disturbing the positions of the LED dies 102 or damaging the LED dies 102 or the elayers 110 .
- the method 900 allows each LED die 102 to be picked up by a PPH 1302 and moved to a display substrate 1402 (e.g., as discussed in greater detail below with reference to FIGS. 13 and 14 ).
- the steps may be performed in different orders, and the method 900 may include different, additional, or fewer steps.
- the method 900 is discussed with reference to FIGS. 10 through 12 , which show the formation of the elayer 110 on LED dies 102 .
- Positive photoresist material is deposited 902 in the regions between the LED dies 102 on the carrier substrate 104 and over the LED dies 102 .
- the LED dies 102 on the carrier substrate 104 may be evenly spaced apart and mounted to the substrate 106 by a layer of adhesive 108 (e.g., as shown in FIG. 3 ).
- the positive photoresist material 1002 is a light-sensitive material that is initially insoluble and becomes soluble when exposed to light.
- the positive photoresist material 1002 can be removed with a solvent, such as a photoresist developer.
- the positive photoresist material 1002 can be mixed with a solvent such that the material is viscous for placement (e.g., via spin coating), and then baked (e.g., soft baking) on the LED dies 102 .
- the positive photoresist material 1002 eventually forms an elayer 110 over the LED dies 102 .
- the positive photoresist material 1002 includes materials to increase adhesion to the pick-up surfaces 1304 .
- the positive photoresist material 1002 is mixed with a functional group material which is able to bind (e.g., covalently) to the non-conformable pick-up surface 1304 .
- the elastomeric material is cured in connection with baking the positive photoresist material 1002 . In other embodiments, a separate curing process is used to cure the elastomeric material.
- Portions of the light 502 incident on the LED dies 102 are absorbed 906 to retain insoluble first portions of the positive photoresist material 1002 on the LED dies 102 .
- FIG. 12 showing a cross sectional view of the LED dies 102 including insoluble photoresist material 1202 and soluble photoresist material 1204 , the light 502 is absorbed by the LED dies 102 so that the positive photoresist material 1002 on top of the LED dies 102 is not exposed to the applied light 502 and remains insoluble photoresist material 1202 .
- Second portions of the photoresist material between the LED dies 102 are exposed 908 to another portion of light 502 to render the second portions soluble.
- the light 502 renders the portions of the positive photoresist material 1002 soluble, forming the soluble photoresist material 1204 between the LED dies 102 .
- the micromanipulator 1306 is connected to the PPH 1302 and controls movement of the PPH 1302 .
- the micromanipulator 1306 aligns the PPH 1302 with the carrier substrate 104 to allow the PPH 1302 to pick up one or more LED dies 102 .
- the micromanipulator 1306 may be a multiple degree of freedom micromanipulator, such as a four degree of freedom micromanipulator configured to move the PPH 1302 up and down, left and right, forward and back, or rotate the PPH 1302 (e.g., along the rotational axis 1308 ).
- the system 1300 includes multiple micromanipulators 1306 and/or PPHs 1302 to perform pick and place tasks in parallel to increase throughput of the system.
- the pick-up surfaces 1304 may be non-conformable pick-up heads that allow the LED dies 102 with elayers 110 to attach to the PPH 1302 .
- the pick-up surfaces 1304 may be glass or fused silica.
- the pick-up surfaces 1304 interface with the elayer 110 of the LED dies 102 using adhesion forces, such as Van der Waals.
- the adhesive 108 may be removed from the carrier substrate 104 before the pick-up surfaces 1304 attach to the elayer 110 of each LED die 102 .
- the pick-up surfaces 1304 are conformable, such as with an elastomeric coating.
- the PPH 1302 is rotated about axis 1308 to pick up one or more second LED dies 102 b with a second pick-up surface 1304 b of the PPH 1302 .
- the second pick-up surface 1304 b may be adjacent to the first pick-up surface 1304 a , as shown in FIG. 13 , or may be a non-adjacent pick-up surface 1304 to the first pick-up surface 1304 a.
- FIG. 14 is a cross sectional view of the display manufacturing system 1300 during LED die 102 placement on a display substrate 1402 , according to one embodiment.
- the LED dies 102 attached to the PPH 1302 via the elayers 110 are placed on the display substrate 1402 of an electronic display.
- the PPH 1302 is moved away from the carrier substrate 104 and aligned with the display substrate 1402 .
- the PPH 1302 may be lifted away from the carrier substrate 104 by the micromanipulator 1306 for subsequent placement of the LED dies 102 on the display substrate 1402 .
- the micromanipulator 1306 places the LED dies 102 on the display substrate 1402 by aligning the PPH 1302 with the display substrate 1402 and rolling the PPH 1302 across the display substrate 1402 .
- the display substrate 1402 may be part of an electronic display with the LED dies 102 placed at sub-pixel locations to connect with the control circuits in the display substrate 1402 that drive the LED dies 102 .
- the display substrate 1402 may be a printed circuit board including gate lines and data lines for a control circuit at each sub-pixel that drive the LED dies 102 according to signals on the gate and data lines. After placement, the LED dies 102 may be bonded to the display substrate 1402 , such as using thermocompression (TC) bonding.
- TC thermocompression
- FIG. 15 is a schematic diagram of a cross section of a mLED 1500 , according to one embodiment.
- the mLED 1500 is an example of an LED die 102 having a light emitting side 112 on which the elayer 110 is formed to facilitate adhesive attachment with a pick-up head.
- the mLED 1500 may include, among other components, an epitaxial structure 1502 formed on a growth substrate (not shown).
- the epitaxial structure 1502 includes a multi-quantum well (“MQW”) 1504 .
- the mLED 1500 further includes a dielectric layer 1506 on the epitaxial structure 1502 , a p-contact 1508 on the dielectric layer 1506 , and an n-contact 1510 on the epitaxial structure 1502 .
- MQW multi-quantum well
- the growth substrate may be removed to reveal the light emitting side 112 as shown in FIG. 15 .
- the growth substrate is not removed, such as when the growth substrate is transparent for the light emitted by the mLED 1500 .
- the mesa 1512 may include various shapes, such as a parabolic shape with a truncated top, to form a reflective enclosure for light 1516 generated within the mLED 1500 .
- the mesa 1512 may include a cylindrical shape with a truncated top, or a conic shape with a truncated top.
- the arrows show how the light 1516 emitted from the MQW 1504 is reflected off the p-contact 1508 and internal walls of the mesa 1512 toward the light emitting side 112 at an angle sufficient for the light to escape the mLED device 1500 (i.e., within a critical angle of total internal reflection).
- the mLED 1500 may include an active light emitting area defined by the MQW 1504 .
- the mLED 1500 directs the light 1516 from the MQW 1504 and increases the brightness level of the light output.
- the mesa 1512 and p-contact 1508 cause reflection of the light 1516 from the MWQ 1504 to form a collimated or quasi-collimated light beam emerging from the light emitting side 112 .
- the deposited layer may be made of other materials, and the same method can be applied to micro-electric devices other than LEDs.
- Persons skilled in the relevant art can appreciate that many modifications and variations are possible in light of the above disclosure.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Abstract
Description
- This application is a continuation of U.S. application Ser. No. 15/789,275, filed Oct. 20, 2017, which is incorporated by reference in its entirety.
- The present disclosure relates to semiconductor device fabrication, specifically to placing a conformable material over light emitting diode (LED) dies to facilitate adhesive attachment in display fabrication.
- In LED display fabrication, LEDs may be moved from one substrate to another. That is, micro-LEDs of different color may be transferred from source substrates where the micro-LEDs were fabricated onto carrier substrates, and then from carrier substrates onto a display substrate including control circuits for controlling the micro-LEDs. Transferring the micro-LEDs from the carrier substrates onto the display substrate may involve picking and placing of LEDs onto desired locations on the display substrate. As the form factor of LED's decreases, the picking and placing of LEDs into desired arrangements and without damaging the LED dies becomes increasingly difficult.
- Embodiments relate to forming an elastomeric interface layer (elayer) over multiple light emitting diode (LED) dies by depositing photoresist materials across multiple LED dies, and using the LED dies as a photolithography mask to facilitate formation of the elayer on each LED die. The elayers facilitate adhesion with a pick-up head for pick and place operation during the manufacturing of an electronic display.
- In some embodiments, a photoresist material on and between light emitting diode (LED) dies is deposited on a carrier substrate. The photoresist material may be a negative photoresist material that becomes insoluble when exposed to light. After depositing the photoresist material, light is applied through the carrier substrate towards the LED dies and the deposited photoresist material. A portion of the light incident on the LED dies is absorbed by the LED dies to retain soluble first portions of the photoresist material on the LED dies. Other portions of photoresist material between the LED dies are exposed to the light, causing second portions of the photoresist material between the LED dies to become insoluble. After applying the light, the soluble first portions of photoresist material on the LED dies are removed, such as by dissolving in a photoresist developer. After removing the first portions of the photoresist material on the LED dies, an elastomeric material is deposited on each LED die and between the second portions of photoresist. The second portions of the photoresist material are removed after depositing the elastomeric material. The elastomeric material remaining on the LED dies forms elastomeric interface layers on the LED dies to facilitate adhesion with a pick and place head (PPH) (or a “pick-up head”).
- In some embodiments, at least a portion of the LED dies on the carrier substrate can be picked up by attaching a non-conformable pick-up head to the elastomeric interface layers over the LED dies. At least a portion of the LED dies attached to the non-conformable pick-up head are placed on a display substrate defining pixel control circuits of an electronic display.
- In some embodiments, the first portions of photoresist material are removed by dissolving the first portions with a first solvent. The first solvent may be a photoresist developer. The second portions of the photoresist material are used as molds for forming the elastomeric layers, and then removed, such as by dissolving the second portions of the photoresist material with a second solvent different from the first solvent, such as a photoresist stripping material that removes insoluble photoresist material. The first solvent is benign to the second portions of the photoresist material, and the second solvent is benign to the elastomeric material forming the elastomeric interface layers on the LED dies. In some embodiments, the second portions of photoresist material are removed by applying light to cause the second portions to become soluble, and then dissolving the second portions using the same solvent used in dissolving the first portions of photoresist material.
- In some embodiments, the LED dies are micro-LED (mLED) dies. In some embodiments, an elastomeric interface layer is formed over multiple vertical-cavity surface-emitting lasers (VCSELs), or other types of LEDs. In some embodiments, the LED dies include Gallium nitride (GaN), gallium arsenide (GaAs), or gallium phosphide (GaP). In some embodiments, the LED dies absorb Ultraviolet (UV) light incident on the LED dies through the carrier substrate.
- In some embodiments, an electronic display panel is fabricated. A photoresist material is deposited on and between light emitting diode (LED) dies on a carrier substrate. Light is applied through the carrier substrate towards the LED dies and the deposited photoresist material, responsive to depositing the photoresist material. A portion of the light incident on the LED dies is absorbed by the LED dies to retain soluble first portions of the photoresist material on the LED dies. Other portions of photoresist material between the LED dies are exposed to the light to render second portions of the photoresist material between the LED insoluble. The first portions of photoresist material are removed, responsive to applying the light, such as by dissolving with a photoresist developer. An elastomeric material is deposited on each LED die and between the second portions of photoresist, responsive to removing the first portions. The second portions of the photoresist material are removed responsive to depositing the elastomeric material, the elastomeric material forming elastomeric interface layers on the LED dies. At least a portion of the LED dies are picked up on the carrier substrate by attaching a non-conformable pick-up head to the elastomeric interface layers over the LED dies. The at least a portion of the LED dies attached to the non-conformable pick-up head are placed on a display substrate defining pixel control circuits of an electronic display.
- Some embodiments include using a positive photoresist material that is also an elastomeric material to form elastomeric interface layers on the LED dies. A photoresist material is deposited on and between LED dies on a carrier substrate. Light is applied through the carrier substrate towards the LED dies and the photoresist material. A portion of the light incident on the LED dies is absorbed to retain insoluble first portions of the photoresist material on the LED dies insoluble. Second portions of the photoresist material between the LED dies are exposed to another portion of the light to render the second portions soluble. Here, the photoresist material may be a positive photoresist that becomes soluble when exposed to the light. The soluble second portions of the photoresist material are removed, and the first portions of the photoresist material are retained to form elastomeric interface layers on the LED dies. In some embodiments, the second portions of the photoresist material are removed by dissolving the second portions with a solvent.
- In some embodiments, an electronic display panel is fabricated. A photoresist material is deposited on and between light emitting diode (LED) dies on a carrier substrate. Light is applied through the carrier substrate towards the LED dies and the photoresist material, responsive to depositing the photoresist material. A portion of the light incident on the LED dies is absorbed to retain insoluble first portions of the photoresist material on the LED dies. Second portions of the photoresist material between the LED dies are exposed to another portion of the light to render the second portions soluble. The second portions of the photoresist material are removed but the first portions of the photoresist material remain to form an elastomeric interface layer on the LED dies. At least a portion of the LED dies on the carrier substrate are picked up by attaching a non-conformable pick-up head to the elastomeric interface layers over the LED dies. The at least a portion of the LED dies attached to the non-conformable pick-up head are placed on a display substrate defining pixel control circuits of an electronic display.
-
FIG. 1 is a cross sectional view of LED dies on a carrier substrate with an elastomeric interface layer (elayer) over each LED die, according to one embodiment. -
FIG. 2 is a flowchart of a method for forming an elayer over LED dies on the carrier substrate, with a negative photoresist material, according to one embodiment. -
FIG. 3 is a cross sectional view of LED dies on the carrier substrate, according to one embodiment. -
FIG. 4 is a cross sectional view of LED dies on the carrier substrate with negative photoresist material on and between the LED dies, according to one embodiment. -
FIG. 5 is a cross sectional view of the LED dies, with the addition of applied light, according to one embodiment. -
FIG. 6 is a cross sectional view of the LED dies on the carrier substrate with portions of soluble photoresist material and insoluble photoresist material caused by the applied light, according to one embodiment. -
FIG. 7 is a cross sectional view of the LED dies with the portions of soluble photoresist material removed, according to one embodiment. -
FIG. 8 is a cross sectional view of the LED dies including elastomeric material, according to one embodiment. -
FIG. 9 is a flowchart of a method for forming an elayer over LED dies on the carrier substrate, with a positive photoresist material, according to one embodiment. -
FIG. 10 is a cross sectional view of LED dies on the carrier substrate with positive photoresist material on and between the LED dies, according to one embodiment. -
FIG. 11 is a cross sectional view of the LED dies with applied light, according to one embodiment. -
FIG. 12 is a cross sectional view of LED dies on the carrier substrate with portions of soluble photoresist material and other portions of insoluble photoresist material that forms elayers on the LED dies, according to one embodiment. -
FIG. 13 is a display manufacturing system during pick up of LED dies from a carrier substrate, according to one embodiment. -
FIG. 14 is a display manufacturing system during placement of LED dies on a display substrate, according to one embodiment. -
FIG. 15 is a schematic diagram of a cross section of a micro-LED, according to one embodiment. - The figures depict various embodiments of the present disclosure for purposes of illustration only. One skilled in the art will readily recognize from the following discussion that alternative embodiments of the structures and methods illustrated herein may be employed without departing from the principles of the disclosure described herein.
- In the following description of embodiments, numerous specific details are set forth in order to provide more thorough understanding. However, note that the embodiments may be practiced without one or more of these specific details. In other instances, well-known features have not been described in detail to avoid unnecessarily complicating the description.
- Embodiments are described herein with reference to the figures, where like reference numbers indicate identical or functionally similar elements. Also in the figures, the left most digits of each reference number corresponds to the figure in which the reference number is first used.
- Embodiments relate to depositing an elastomeric interface layer (elayer) over multiple light emitting diode (LED) dies by using photoresist materials rather than physical molds or processes that may damage the elayer or the LED dies. The deposited elayer allows each LED to be picked up by a pick-up head (or pick and place head (PPH)), and placed onto a display substrate including control circuits for sub-pixels of an electronic display. In some embodiments, the LED dies are micro-LED (mLED) dies.
-
FIG. 1 is a cross sectional view of LED dies 102 on acarrier substrate 104 with an elastomeric interface layer (elayer) 110 over each LED die 102, according to one embodiment. The LED dies 102 may be fabricated on a source substrate and placed onto thecarrier substrate 104 to facilitate pick and place onto a display substrate of an electronic display. Thecarrier substrate 104 may include asubstrate 106 on which the LED dies 102 are placed, and anadhesive layer 108 that holds the LED dies 102 on thesubstrate 106. - The
elayer 110 is formed on thelight emitting side 112 of each LED die 102. Theelayer 110 is a conformable layer that allows each of the LED dies 102 to be attached to and picked up by a pick and place head (PPH) (e.g., as discussed in greater detail with reference toFIG. 13 ). In particular, theelayer 110 facilitates attachment with non-conformable pick-up surfaces 1304 of thePPH 1302, or in another example, conformable pick-up surfaces 1304 of aPPH 1302. Theelayer 110 may attach to a pick-up surface 1304 due to adhesion forces, such as Van der Waals. Theelayer 110 may include any material that provides sufficient adhesion to the pick-up surfaces 1304. For example, theelayer 110 includes elastomers, such as Polydimethylsiloxane (PDMS) or Polyurethane (PU). In some embodiments, the interface layer on thelight emitting side 112 of the LED dies 102 contains no elastomeric materials. For example, theelayer 110 includes gels that provides adhesion via covalent chemical bonds. Theelayer 110 may be polymer with viscoelasticity (having both viscosity and elasticity). Theelayer 110 may also include materials that have weak inter-molecular forces, a low Young's modulus, and/or high failure strain compared with other materials. - The side of each LED die 102 facing the
carrier substrate 104 includescontact pads 114. Each of the LED dies 102 emit light out of thelight emitting side 112 if an electric potential is applied betweenelectrical contact pads 114. Theelectrical contact pads 114 connect with control circuits in a display substrate (e.g., as shown inFIG. 14 ) that drive the LED dies 102 when the LED dies 102 are mounted to the display substrate. - As discussed in greater detail below in connection with
FIG. 15 , the LED dies 102 may be mLED dies including an epitaxial structure with gallium, such as gallium nitride (GaN), gallium arsenide (GaAs), or gallium phosphide (GaP). The gallium material of the LED dies may block certain wavelengths of light to serve as a mask for photoresist material used in forming theelayer 110. In some embodiments, the method and principles as described with reference to LED dies 102 can be applied to other semiconductor or microelectronic devices. For example, an elayer may be formed on a vertical-cavity surface-emitting laser (VCSEL) to facilitate pick and place of the VCSEL. - The
carrier substrate 104 has a flat surface mounted with LED dies 102 that supports the LED dies 102 during the process of forming theelayer 110 over each LED die 102. Thecarrier substrate 104 is transparent to, at least some, wavelengths of light. For example, thecarrier substrate 104 may include a glass or sapphire substrate that is transparent to light that changes photoresist material state and is absorbed by the LED dies 102. This allows light to be applied through thecarrier substrate 104 to the bottom sides of the LED dies 102 and the regions between the LED dies 102, resulting in photoresist material over LED dies 102 to be blocked from the light and exposing photoresist material between the LED dies 102 to the light. Thecarrier substrate 104 may have any number of LED dies 102 attached, such as one or more arrays of LED dies. Thecarrier substrate 104 may have a hard flat surface, rigid enough to support the LED dies 102 as thecarrier substrate 104 is moved. In some embodiments, the LED dies 102 are released from thecarrier substrate 104 by removing the adhesive 108 (e.g., with a solvent, wet or dry etching, etc.), or weakening the adhesive 108. In other embodiments, the adhesive 108 is weak enough that the LED dies 102 may be removed with force (e.g., by a PPH 1302) without damaging the LED dies 102. -
FIG. 2 is a flowchart of amethod 200 for forming anelayer 110 over LED dies 102 on thecarrier substrate 104, according to one embodiment. Specifically, a negative photoresist material provides a temporary template for forming theelayer 110 that can be gently removed without damaging theelayer 110 or LED dies 102. Among other advantages, themethod 200 provides for simultaneous formation of anelayer 110 on multiple LED dies 102 without disturbing the positions of the LED dies 102 or damaging the LED dies 102 or theelayers 110. The steps may be performed in different orders, and themethod 200 may include different, additional, or fewer steps. Themethod 200 is discussed with reference toFIGS. 3 through 8 , which show the formation of theelayer 110 on LED dies 102. - A negative photoresist material is deposited 402 in the regions between the LED dies 102 on the
carrier substrate 104 and over the LED dies 102. With reference toFIG. 3 , showing a cross sectional view of the LED dies 102 on thecarrier substrate 104, the LED dies 102 may be evenly spaced apart on thecarrier substrate 104 and attached to thecarrier substrate 104 via a layer ofadhesive 108. With reference toFIG. 4 , showing a cross sectional view of the LED dies withnegative photoresist material 402, thenegative photoresist material 402 is a light-sensitive material that is initially soluble and becomes insoluble when exposed to light. For example, without exposure to the light, thenegative photoresist material 402 can be removed with a solvent, such as a photoresist developer. Thenegative photoresist material 402 can be mixed with a solvent such that thenegative photoresist material 402 is viscous for placement (e.g., via spin coating) onto the LED dies 102 andcarrier substrate 104, and then baked (e.g., soft baking) on the LED dies 102. - The
carrier substrate 104 may be an intermediate substrate to facilitate LED die 102 transfer between a native substrate and thedisplay substrate 1402. The space between the LED dies 102 may be a result of the singulation process (in which a single group of LED dies 102 are separated into individual LED dies 102) or another process that creates the open regions between the LED dies 102. - For example, the open regions between the LED dies 102 may be formed by the use of an expanding carrier film. The carrier film is attached to a first side of the LED dies 102 on a native substrate. The LED dies 102 may be singulated before or after the carrier film is attached to the LED dies 102. After the LED dies 102 are detached from the native substrate, the LED dies 102 are separated by expanding the carrier film to widen the open regions between the LED dies 102. The
carrier substrate 104 is applied to a second side of the LED dies 102. The LED dies 102 are attached to the adhesive 108 layer of thecarrier substrate 104 with the open regions being defined between the LED dies 102. The carrier film is separated from the first side of the LED dies 102 to expose the first die of the LED dies 102 for formation of theelayer 110. - After depositing the
negative photoresist material 402, light is applied 204 through thecarrier substrate 104 towards the LED dies 102 and the depositednegative photoresist material 402. With reference toFIG. 5 , showing a cross sectional view of the LED dies 102 with applied light 502, thecarrier substrate 104 is, at least partially, transparent to the appliedlight 502. Thetransparent carrier substrate 104 allows the light 502 to shine on portions of thenegative photoresist material 402 between the LED dies 102 that are not blocked by the LED dies 102. By applying light through thecarrier substrate 104 and using the LED dies 102 to block portions of the light 502, a separate photomask or masking process to selectively block light from reaching portions of thenegative photoresist material 402 is not needed. In some embodiments, the light 502 is collimated ultraviolet (UV) light, and thecarrier substrate 104 includes glass or sapphire that is transparent to theUV light 502, while the LED dies 102 include gallium or other material that absorbs theUV light 502. However, other wavelengths of light and materials may be used such that the substrate is transparent to the light, the LED dies absorb the light, and the light changes the state of the photoresist. -
Light 502 incident on the LED dies is absorbed 206 to retain soluble first portions of thenegative photoresist material 402 on the LED dies 102. With reference toFIG. 6 , showing a cross sectional view of the LED dies 102 with soluble photoresist material 602 andinsoluble photoresist material 604, the light 502 is directed at the LED dies 102 is absorbed by the LED dies 102 so that thenegative photoresist material 402 on top of the LED dies 102 is not exposed to the appliedlight 502 and remains soluble photoresist material 602. - Portions of the
negative photoresist material 402 between the LED dies 102 are exposed 208 to light 502 to render the second portions of thenegative photoresist material 402 between the LED dies 102 insoluble. With reference toFIG. 6 ,insoluble photoresist material 604 is formed between the LED dies 102. Because thenegative photoresist material 402 is a negative resist, the light 502 renders the photoresist material insoluble, creating theinsoluble photoresist material 604 between the LED dies 102. In some embodiments, theinsoluble photoresist material 604 can be insoluble to a first solvent, such as a photoresist developer, but soluble to a second solvent, such as a photoresist stripper. - After applying the light 502, first portions of the
negative photoresist material 402 over the LED dies 102 are removed 210. With reference toFIG. 7 , showing a cross sectional view of the LED dies 102 with soluble photoresist material 602 removed over the LED dies 102, the soluble photoresist material 602 is removed to expose thelight emitting side 112 of the LED dies 102. Since the first portions thenegative photoresist material 402 over the LED dies 102 were not exposed to the light 502, the first portions are soluble photoresist material 602. The soluble photoresist material 602 is soluble to a solvent, such as a photoresist developer like sodium or potassium carbonate solution. The solvent is a substance that reacts to remove the soluble photoresist material 602 while being benign to theinsoluble photoresist material 604. For example, the solvent is a liquid that dissolves the soluble photoresist material 602. -
Elastomeric material 802 is deposited 212 on each LED die 102 and between the second portions ofinsoluble photoresist material 604, after removing the first portions of soluble photoresist material 602. With reference toFIG. 8 , showing a cross sectional view of the LED dies 102 withelastomeric material 802, the soluble photoresist material 602 is removed resulting in theinsoluble photoresist material 604 forming a mold for theelastomeric material 802. Theelastomeric material 802 is formed on thelight emitting side 112 of the LED dies 102 between the mold walls of theinsoluble photoresist material 604. Theelastomeric material 802 forms theelayer 110 over the LED dies. As discussed with reference toFIG. 1 , theelastomeric material 802 which forms theelayer 110 may include any material that provides sufficient adhesion to the pick-up surfaces 1304. In some embodiments, theelastomeric material 802 is cured. The curing may harden theelastomeric material 802 and attaches theelastomeric material 802 on the LED dies 102elastomeric material 802. Theelastomeric material 802 may be cured in various ways, such as by application of light, heat, chemical additives, and/or vulcanization. - After depositing the
elastomeric material 802, the second portions of the photoresist material (the insoluble photoresist material 604) are removed 214, resulting in theelastomeric material 802 forming anelayer 110 on each of LED dies 102. With reference toFIG. 1 ,separate elayers 110 are on each of the LED dies 102, and the photoresist material used in forming theelayers 110 is removed. The second portions of theinsoluble photoresist material 604 form a mold that can be removed in a manner that is benign to theelastomeric material 802. In some embodiments, the second portions of theinsoluble photoresist material 604 are removed after theelastomeric material 802 is cured. In other embodiments, theelastomeric material 802 is cured after removal of theinsoluble photoresist material 604. In some embodiments, theinsoluble photoresist material 604 can be removed with a solvent different from the solvent used to remove the soluble photoresist material 602. For example, theinsoluble photoresist material 604 may be removed using a photoresist stripping material for insoluble photoresist, such as acetone. In other embodiments, thenegative photoresist material 402 is a reversible photoresist, such that theinsoluble photoresist material 604 is reversed (e.g., by application of light) to become soluble photoresist material, and then removed with a solvent developer (e.g., the same solvent used to remove the first portions of photoresist material. For example, laser light incident upon theinsoluble photoresist material 604 may be used to render the material soluble. In other embodiments, theinsoluble photoresist material 604 is removed by dry etching, for example with an oxygen or air radio frequency (RF) plasma. After theinsoluble photoresist material 604 is removed, theelastomeric material 802 forms anelayer 110. Theelayer 110 is conformable layer that allows each of the LED dies 102 to be attached to and picked up by a pick-up surface 1304 of a pick and place head (PPH) 1302. -
FIG. 9 is a flowchart of a method 900 for forming anelayer 110 over LED dies 102 on thecarrier substrate 104, according to one embodiment. The method 900 includes a positive material that forms theelayer 110 over the LED dies 102. Among other advantages, the method 900 provides for simultaneous formation of anelayer 110 on multiple LED dies 102 without disturbing the positions of the LED dies 102 or damaging the LED dies 102 or theelayers 110. After forming theelayers 110, the method 900 allows each LED die 102 to be picked up by aPPH 1302 and moved to a display substrate 1402 (e.g., as discussed in greater detail below with reference toFIGS. 13 and 14 ). The steps may be performed in different orders, and the method 900 may include different, additional, or fewer steps. The method 900 is discussed with reference toFIGS. 10 through 12 , which show the formation of theelayer 110 on LED dies 102. - Positive photoresist material is deposited 902 in the regions between the LED dies 102 on the
carrier substrate 104 and over the LED dies 102. The LED dies 102 on thecarrier substrate 104 may be evenly spaced apart and mounted to thesubstrate 106 by a layer of adhesive 108 (e.g., as shown inFIG. 3 ). With reference toFIG. 10 , showing a cross sectional view of the LED dies 102 withpositive photoresist material 1002, thepositive photoresist material 1002 is a light-sensitive material that is initially insoluble and becomes soluble when exposed to light. For example, after exposure to light, thepositive photoresist material 1002 can be removed with a solvent, such as a photoresist developer. Thepositive photoresist material 1002 can be mixed with a solvent such that the material is viscous for placement (e.g., via spin coating), and then baked (e.g., soft baking) on the LED dies 102. - The
positive photoresist material 1002 eventually forms anelayer 110 over the LED dies 102. In some embodiments, thepositive photoresist material 1002 includes materials to increase adhesion to the pick-up surfaces 1304. For example, thepositive photoresist material 1002 is mixed with a functional group material which is able to bind (e.g., covalently) to the non-conformable pick-up surface 1304. In some embodiments, the elastomeric material is cured in connection with baking thepositive photoresist material 1002. In other embodiments, a separate curing process is used to cure the elastomeric material. - After depositing the
positive photoresist material 1002, light is applied 904 through thecarrier substrate 104 towards the LED dies 102 and thepositive photoresist material 1002. With reference toFIG. 11 , showing a cross sectional view of the LED dies 102 with applied light 502, thecarrier substrate 104 is, at least partially, transparent to the appliedlight 502. Thetransparent carrier substrate 104 allows the light 502 to shine on portions of thepositive photoresist material 1002 that are not blocked by the LED dies 102. One advantage of method 900 is that a photomask and masking process is not required to selectively block light from reaching portions of thepositive photoresist material 1002 over the LED dies 102. In some embodiments, the light 502 is collimated ultraviolet (UV) light, such that thecarrier substrate 104 is transparent to theUV light 502, while the LED dies 102 absorb theUV light 502. - Portions of the light 502 incident on the LED dies 102 are absorbed 906 to retain insoluble first portions of the
positive photoresist material 1002 on the LED dies 102. With reference toFIG. 12 , showing a cross sectional view of the LED dies 102 includinginsoluble photoresist material 1202 and soluble photoresist material 1204, the light 502 is absorbed by the LED dies 102 so that thepositive photoresist material 1002 on top of the LED dies 102 is not exposed to the appliedlight 502 and remainsinsoluble photoresist material 1202. - Second portions of the photoresist material between the LED dies 102 are exposed 908 to another portion of light 502 to render the second portions soluble. The light 502 renders the portions of the
positive photoresist material 1002 soluble, forming the soluble photoresist material 1204 between the LED dies 102. - The second portions of the photoresist material (the soluble photoresist material 1204) are removed 910, to form an
elayer 110 on each of the LED dies 102, from the first portions of theinsoluble photoresist material 1202. The soluble photoresist material 1204 can be removed with a solvent. The solvent may be a photoresist developer that dissolves soluble photoresist material 1204, but is benign toinsoluble photoresist material 1202. The remaininginsoluble photoresist material 1202 forms theelayers 110 on the LED dies 102. Theelayer 110 is conformable layer that allows each of the LED dies 102 to be attached to and picked up by a pick-up surface 1304 of a pick and place head (PPH) 1302. In some embodiments, theinsoluble photoresist material 1202 is cured after removal of the soluble photoresist material 1204 to form theelayers 110. -
FIG. 13 is adisplay manufacturing system 1300 during pick up of the LED dies 102 from acarrier substrate 104, according to one embodiment. Thesystem 1300 includes aPPH 1302 for picking LED dies 102 from thecarrier substrate 104. Thesystem 1300 includes the LED dies 102, thecarrier substrate 104, amicromanipulator 1306, aPPH 1302 defining anaxis 1308, and pick-up surfaces 1304. The LED dies 102 are mounted to thecarrier substrate 104. Themicromanipulator 1306 moves thePPH 1302, such as with 6 degrees of freedom. ThePPH 1302 includes pick-up surfaces 1304 that adheres with theelayers 110 of the LED dies 102 for pick and place operations. - The
micromanipulator 1306 is connected to thePPH 1302 and controls movement of thePPH 1302. Themicromanipulator 1306 aligns thePPH 1302 with thecarrier substrate 104 to allow thePPH 1302 to pick up one or more LED dies 102. In some embodiments, themicromanipulator 1306 may be a multiple degree of freedom micromanipulator, such as a four degree of freedom micromanipulator configured to move thePPH 1302 up and down, left and right, forward and back, or rotate the PPH 1302 (e.g., along the rotational axis 1308). In some embodiments, thesystem 1300 includesmultiple micromanipulators 1306 and/orPPHs 1302 to perform pick and place tasks in parallel to increase throughput of the system. - The
PPH 1302 has a polygon shaped cross section. The edges of the polygon shape cross section define multiple pick-up surfaces 1304 of thePPH 1302. Theelayer 110 of each LED dies 102 are configured to mount to the pick-up surfaces 1304 (e.g., due to adhesion forces) to facilitate transfer of the LED dies 102 from thecarrier substrate 104 to adisplay substrate 1402. ThePPH 1302 may be rotated along therotational axis 1308 to pick up arrays of LED dies 102 at one or more pick-up surfaces 1304. Although thePPH 1302 has an octagonal cross section and eight pick-up surfaces 1304, aPPH 1302 may have different shaped cross sections (e.g., triangular, square, hexagon, etc.) and different numbers of pick-up surfaces in various embodiments. Although the pick and place tool discussed herein is aPPH 1302, other types of pick-up heads using adhesive attachment withelayers 110 may be used. - The pick-up surfaces 1304 may be non-conformable pick-up heads that allow the LED dies 102 with
elayers 110 to attach to thePPH 1302. For example, the pick-up surfaces 1304 may be glass or fused silica. The pick-up surfaces 1304 interface with theelayer 110 of the LED dies 102 using adhesion forces, such as Van der Waals. The adhesive 108 may be removed from thecarrier substrate 104 before the pick-up surfaces 1304 attach to theelayer 110 of each LED die 102. Although theelayers 110 discussed herein are particularly adapted for non-conformable pick-up heads, in some embodiments, the pick-up surfaces 1304 are conformable, such as with an elastomeric coating. - Subsequent to the
PPH 1302 picking up the one or more first LED dies 102 a with the first pick-upsurface 1304 a, thePPH 1302 is rotated aboutaxis 1308 to pick up one or more second LED dies 102 b with a second pick-upsurface 1304 b of thePPH 1302. The second pick-upsurface 1304 b may be adjacent to the first pick-upsurface 1304 a, as shown inFIG. 13 , or may be a non-adjacent pick-up surface 1304 to the first pick-upsurface 1304 a. -
FIG. 14 is a cross sectional view of thedisplay manufacturing system 1300 during LED die 102 placement on adisplay substrate 1402, according to one embodiment. The LED dies 102 attached to thePPH 1302 via theelayers 110 are placed on thedisplay substrate 1402 of an electronic display. - After the
PPH 1302 has been populated with LED dies 102, thePPH 1302 is moved away from thecarrier substrate 104 and aligned with thedisplay substrate 1402. For example, thePPH 1302 may be lifted away from thecarrier substrate 104 by themicromanipulator 1306 for subsequent placement of the LED dies 102 on thedisplay substrate 1402. Themicromanipulator 1306 places the LED dies 102 on thedisplay substrate 1402 by aligning thePPH 1302 with thedisplay substrate 1402 and rolling thePPH 1302 across thedisplay substrate 1402. Thedisplay substrate 1402 may be part of an electronic display with the LED dies 102 placed at sub-pixel locations to connect with the control circuits in thedisplay substrate 1402 that drive the LED dies 102. For example, thedisplay substrate 1402 may be a printed circuit board including gate lines and data lines for a control circuit at each sub-pixel that drive the LED dies 102 according to signals on the gate and data lines. After placement, the LED dies 102 may be bonded to thedisplay substrate 1402, such as using thermocompression (TC) bonding. -
FIG. 15 is a schematic diagram of a cross section of amLED 1500, according to one embodiment. ThemLED 1500 is an example of an LED die 102 having alight emitting side 112 on which theelayer 110 is formed to facilitate adhesive attachment with a pick-up head. ThemLED 1500 may include, among other components, anepitaxial structure 1502 formed on a growth substrate (not shown). Theepitaxial structure 1502 includes a multi-quantum well (“MQW”) 1504. ThemLED 1500 further includes adielectric layer 1506 on theepitaxial structure 1502, a p-contact 1508 on thedielectric layer 1506, and an n-contact 1510 on theepitaxial structure 1502. Theepitaxial structure 1502 is shaped, such as via an etch process, into amesa 1512 and abase 1514 of themesa 1512. Themulti-quantum well 1504 defines an active light emitting area that is included in the structure of themesa 1512. Themesa 1512 may include a truncated top defined on a side opposed to alight emitting side 112 of themLED 1500. - If the semiconductor structure of the
mLED 1500 is grown on a growth substrate, such as a non-transparent substrate, the growth substrate may be removed to reveal thelight emitting side 112 as shown inFIG. 15 . In another example, the growth substrate is not removed, such as when the growth substrate is transparent for the light emitted by themLED 1500. - The
mesa 1512 may include various shapes, such as a parabolic shape with a truncated top, to form a reflective enclosure for light 1516 generated within themLED 1500. In other embodiments, themesa 1512 may include a cylindrical shape with a truncated top, or a conic shape with a truncated top. The arrows show how the light 1516 emitted from theMQW 1504 is reflected off the p-contact 1508 and internal walls of themesa 1512 toward thelight emitting side 112 at an angle sufficient for the light to escape the mLED device 1500 (i.e., within a critical angle of total internal reflection). The p-contact 1508 and the n-contact 1510 connect themLED 1500, such as to the display substrate including a control circuit for themLED 1500. The n-contact 1510 is formed at thebase 1514 on a side opposite thelight emitting side 112. - The
mLED 1500 may include an active light emitting area defined by theMQW 1504. ThemLED 1500 directs the light 1516 from theMQW 1504 and increases the brightness level of the light output. In particular, themesa 1512 and p-contact 1508 cause reflection of the light 1516 from theMWQ 1504 to form a collimated or quasi-collimated light beam emerging from thelight emitting side 112. - The foregoing description of the embodiments has been presented for the purpose of illustration; it is not intended to be exhaustive or to limit the patent rights to the precise forms disclosed. For example, the deposited layer may be made of other materials, and the same method can be applied to micro-electric devices other than LEDs. Persons skilled in the relevant art can appreciate that many modifications and variations are possible in light of the above disclosure.
- The language used in the specification has been principally selected for readability and instructional purposes, and it may not have been selected to delineate or circumscribe the inventive subject matter. It is therefore intended that the scope of the patent rights be limited not by this detailed description, but rather by any claims that issue on an application based hereon. Accordingly, the disclosure of the embodiments is intended to be illustrative, but not limiting, of the scope of the patent rights, which is set forth in the following claims.
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/164,629 US10269781B1 (en) | 2017-10-20 | 2018-10-18 | Elastomeric layer fabrication for light emitting diodes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/789,275 US10319705B2 (en) | 2017-10-20 | 2017-10-20 | Elastomeric layer fabrication for light emitting diodes |
US16/164,629 US10269781B1 (en) | 2017-10-20 | 2018-10-18 | Elastomeric layer fabrication for light emitting diodes |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/789,275 Continuation US10319705B2 (en) | 2017-10-20 | 2017-10-20 | Elastomeric layer fabrication for light emitting diodes |
Publications (2)
Publication Number | Publication Date |
---|---|
US10269781B1 US10269781B1 (en) | 2019-04-23 |
US20190148348A1 true US20190148348A1 (en) | 2019-05-16 |
Family
ID=66169579
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/789,275 Active US10319705B2 (en) | 2017-10-20 | 2017-10-20 | Elastomeric layer fabrication for light emitting diodes |
US16/164,629 Active US10269781B1 (en) | 2017-10-20 | 2018-10-18 | Elastomeric layer fabrication for light emitting diodes |
US16/408,356 Active US10685946B2 (en) | 2017-10-20 | 2019-05-09 | Elastomeric layer fabrication for light emitting diodes |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/789,275 Active US10319705B2 (en) | 2017-10-20 | 2017-10-20 | Elastomeric layer fabrication for light emitting diodes |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/408,356 Active US10685946B2 (en) | 2017-10-20 | 2019-05-09 | Elastomeric layer fabrication for light emitting diodes |
Country Status (3)
Country | Link |
---|---|
US (3) | US10319705B2 (en) |
CN (1) | CN111373542A (en) |
WO (1) | WO2019079046A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265522A (en) * | 2019-06-28 | 2019-09-20 | 上海天马微电子有限公司 | The manufacturing method of display panel, display device and display panel |
CN111933634A (en) * | 2020-09-17 | 2020-11-13 | 山东元旭光电股份有限公司 | Preparation method of Micro-LED chip |
US20210384051A1 (en) * | 2018-10-18 | 2021-12-09 | Osram Opto Semiconductors Gmbh | Adhesive Stamp and Method for Transferring Missing Semiconductor Chips |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11088306B2 (en) * | 2019-04-08 | 2021-08-10 | Innolux Corporation | Light-emitting devices and methods for manufacturing the same |
CN111864038A (en) * | 2019-04-28 | 2020-10-30 | 陕西坤同半导体科技有限公司 | Display panel, display device and preparation method of display panel |
CN112968078B (en) * | 2020-05-18 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Micro light emitting diode transfer method and display device |
CN112993093A (en) * | 2020-08-11 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Display panel, preparation method of display panel and electronic equipment |
KR102542483B1 (en) * | 2020-12-31 | 2023-06-12 | 국민대학교산학협력단 | Ultra-thin LED element, ink for ink-jet and light source comprising the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6650044B1 (en) | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
US7052924B2 (en) * | 2004-03-29 | 2006-05-30 | Articulated Technologies, Llc | Light active sheet and methods for making the same |
EP2650905B1 (en) | 2004-06-04 | 2022-11-09 | The Board of Trustees of the University of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
DE102007043902A1 (en) | 2007-09-14 | 2009-03-19 | Osram Opto Semiconductors Gmbh | Method for isolating semiconductor components with metallization of compound, involves separating portions of metallization according to partition into semiconductor components by residual portion of photo resist layer |
US7939350B2 (en) | 2008-01-03 | 2011-05-10 | E. I. Du Pont De Nemours And Company | Method for encapsulating a substrate and method for fabricating a light emitting diode device |
US8865489B2 (en) * | 2009-05-12 | 2014-10-21 | The Board Of Trustees Of The University Of Illinois | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
US20120056228A1 (en) | 2010-09-07 | 2012-03-08 | Phostek, Inc. | Led chip modules, method for packaging the led chip modules, and moving fixture thereof |
US9548332B2 (en) * | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
WO2014150263A1 (en) | 2013-03-15 | 2014-09-25 | Ledengin, Inc. | Printing phosphor on led wafer using dry film lithography |
US9437782B2 (en) * | 2014-06-18 | 2016-09-06 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
CN106716611B (en) * | 2014-10-17 | 2019-08-20 | 英特尔公司 | Micro- pickup and bonding assembling |
WO2016183844A1 (en) * | 2015-05-21 | 2016-11-24 | Goertek.Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
CN108682370B (en) | 2015-09-02 | 2021-10-15 | 脸谱科技有限责任公司 | Display and method for manufacturing the same |
CN106229326B (en) * | 2016-07-22 | 2019-03-12 | 深圳市华星光电技术有限公司 | Transfer the method for micro- light emitting diode and the production method of display panel |
-
2017
- 2017-10-20 US US15/789,275 patent/US10319705B2/en active Active
-
2018
- 2018-10-05 WO PCT/US2018/054710 patent/WO2019079046A1/en active Application Filing
- 2018-10-05 CN CN201880075431.0A patent/CN111373542A/en active Pending
- 2018-10-18 US US16/164,629 patent/US10269781B1/en active Active
-
2019
- 2019-05-09 US US16/408,356 patent/US10685946B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210384051A1 (en) * | 2018-10-18 | 2021-12-09 | Osram Opto Semiconductors Gmbh | Adhesive Stamp and Method for Transferring Missing Semiconductor Chips |
US12014941B2 (en) * | 2018-10-18 | 2024-06-18 | Osram Opto Semiconductors Gmbh | Method for transferring missing semiconductor chips using an adhesive stamp |
CN110265522A (en) * | 2019-06-28 | 2019-09-20 | 上海天马微电子有限公司 | The manufacturing method of display panel, display device and display panel |
CN111933634A (en) * | 2020-09-17 | 2020-11-13 | 山东元旭光电股份有限公司 | Preparation method of Micro-LED chip |
Also Published As
Publication number | Publication date |
---|---|
US10685946B2 (en) | 2020-06-16 |
US10319705B2 (en) | 2019-06-11 |
US10269781B1 (en) | 2019-04-23 |
US20190123031A1 (en) | 2019-04-25 |
CN111373542A (en) | 2020-07-03 |
WO2019079046A1 (en) | 2019-04-25 |
US20190333903A1 (en) | 2019-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10685946B2 (en) | Elastomeric layer fabrication for light emitting diodes | |
US10916465B1 (en) | Inorganic light emitting diode (ILED) assembly via direct bonding | |
US10930529B2 (en) | Formation of elastomeric layer on selective regions of light emitting device | |
KR101799656B1 (en) | Light emitting diode assembly and method for transfering thereof | |
KR101937036B1 (en) | Method for transferring led structure assembly and led structure assembly | |
US20200028030A1 (en) | Light emitting device and manufacturing method thereof | |
US10326040B1 (en) | Washable mold for conformable layer formation on semiconductor devices | |
CN109309038A (en) | Method for batch transfer of micro-semiconductor structures | |
JP2004281630A (en) | Element transfer method, substrate for element transfer, and display device | |
CN112768370B (en) | Transfer method and transfer device for micro-component | |
US10763135B2 (en) | Integrated elastomeric interface layer formation and singulation for light emitting diodes | |
JP2008118161A (en) | Element transferring method | |
EP3474336B1 (en) | Elastomeric layer fabrication for light emitting diodes | |
US11145797B1 (en) | Forming conformable layer with flap on semiconductor devices | |
JP2002314123A (en) | Method of transferring element, method of arranging element using it, and method of manufacturing image display device | |
US20220254950A1 (en) | Selective release and transfer of micro devices | |
JP2004266026A (en) | Method of manufacturing chip component, layout method of elements, and method of manufacturing image display device | |
KR102347148B1 (en) | transfer method of discrete devices using laser | |
US20240021755A1 (en) | Display panel and manufacturing method thereof, and display device | |
TWI757170B (en) | Light emitting device and method of light emitting chip mass transfer | |
CN117542939A (en) | Light emitting chip transfer method and light emitting chip assembly | |
CN117637722A (en) | Manufacturing method of display assembly, display assembly and display chip transfer structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: META PLATFORMS TECHNOLOGIES, LLC, CALIFORNIA Free format text: CHANGE OF NAME;ASSIGNOR:FACEBOOK TECHNOLOGIES, LLC;REEL/FRAME:060315/0224 Effective date: 20220318 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |