KR101799656B1 - Light emitting diode assembly and method for transfering thereof - Google Patents

Light emitting diode assembly and method for transfering thereof Download PDF

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KR101799656B1
KR101799656B1 KR1020150191003A KR20150191003A KR101799656B1 KR 101799656 B1 KR101799656 B1 KR 101799656B1 KR 1020150191003 A KR1020150191003 A KR 1020150191003A KR 20150191003 A KR20150191003 A KR 20150191003A KR 101799656 B1 KR101799656 B1 KR 101799656B1
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substrate
carrier substrate
led
support substrate
electrode
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KR20170079930A (en
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정탁
최원식
이상헌
김자연
주진우
김윤석
백종협
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한국광기술원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Microelectronics & Electronic Packaging (AREA)
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  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
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Abstract

SUMMARY OF THE INVENTION It is an object of the present invention to provide a LED structure capable of forming a LED structure having an individual LED or an LED array and transferring the LED structure to a target substrate and a method of transferring the LED structure. To this end, the present invention is characterized in that a plurality of LED modules having a pn junction structure adhered to a support substrate via a support substrate adhesion layer are bonded to the support substrate adhesion layer via at least one of light irradiated to the support substrate, So that the fixed LED module is separated from the supporting substrate in an individual or an array form. Thus, the present invention has the advantage of forming LED structures with individual LEDs or LED arrays so that individual LEDs or LED arrays can be picked up and transferred to a target substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode (LED)

The present invention relates to a LED structure and a method of transferring the same, and more particularly, to a LED structure capable of forming a LED structure having an individual LED or an LED array and transferring the LED structure to a target substrate and a transfer method thereof.

Recently, lighting devices composed of LEDs (Light Emitting Diodes) have a longer lifespan compared to conventional incandescent lamps or fluorescent lamps, have relatively low power consumption, and do not emit pollutants in the manufacturing process. And LEDs are being applied not only to display devices using light emission but also to backlight devices of lighting devices and LCD display devices.

In particular, LEDs can be driven at a relatively low voltage, but have the advantages of low heat generation and long life due to high energy efficiency. As technology for providing white light, which was difficult to implement in the past, has been developed, most light sources And it is expected that it will replace the device.

A typical structure of a nitride semiconductor light emitting device includes a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, a p-type nitride semiconductor layer and an active layer And a part of the region is removed by a process such as etching to expose a part of the upper surface of the n-type nitride semiconductor layer.

A p-type bonding electrode is formed after an n-type electrode is formed on the exposed n-type nitride semiconductor layer and a transparent electrode layer is formed on the p-type nitride semiconductor layer to form an ohmic contact.

On the other hand, an LED applied to a medical device for a pixel display or a human body is generally required to be transferred to a flexible substrate having a very thin thickness of 30 mu m or less, with a distance of 100 mu m or less.

In this case, in order to transfer individual LEDs or arrays, an LED is attached to a separate support substrate, and heat is applied to the attached interface to induce a phase change from a solid state to a liquid state, thereby weakening the adhesive force of the interface, To the individual chips is used.

At this time, there is a problem in that some LEDs are not separated from the support substrate due to the problem of uniformity of the entire wafer due to the process of making the liquid from the solid state by applying heat to the interface.

In addition, there is a problem in that LEDs are not separated from the supporting substrate, and it is difficult to transfer the LEDs individually or in array units.

Korean Patent Laid-Open Publication No. 10-2014-0111254 (entitled Micro Light Emitting Diode)

In order to solve these problems, it is an object of the present invention to provide an LED structure capable of forming an LED structure having an individual LED or an LED array and transferred to a target substrate, and a method of transporting the LED structure.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a second support substrate for preventing bending deformation of a support substrate main body; a second support substrate bonding layer for bonding the support substrate main body and the second support substrate; A plurality of LED modules each having a pn junction structure adhered to a support substrate adhesive layer provided on a support substrate having an adhesive layer provided on the support substrate are supported by at least one of light irradiated to the support substrate or heat applied to the support substrate, The adhesive strength of the substrate bonding layer is weakened so that the fixed LED module is separated from the supporting substrate individually or in an array form.

In addition, the LED module according to the present invention is characterized by being a horizontal structure, a vertical structure, or a flip structure.

In addition, the LED module according to the present invention includes an epitaxial structure from which a growth substrate is removed, and a first electrode and a second electrode.

In addition, the LED module according to the present invention is divided into individual epitaxial structures having a first electrode and a second electrode, and at least one of the separated epitaxial structure, the first electrode, and the second electrode may protect And a protective film formed on the substrate.

In addition, the light emitted from the support substrate according to the present invention has an ultraviolet (UV) wavelength range.

In addition, the supporting substrate according to the present invention is characterized in that the supporting substrate main body is made of at least one of a flexible material which flexibly and flexibly, or a rigid material which is rigidly rigid and does not bend well.

delete

The adhesive strength of the second adhesive layer of the support substrate according to the present invention is the same as or lower than the adhesive strength of the adhesive layer of the support substrate.

The flexible material according to the present invention may be one of PDMS, PI, PET, PO, PVC, PC, PE, PP, and PS.

Further, the rigid material according to the present invention is characterized by being made of any one of Si, GaAs, glass, sapphire, and plastic.

According to another aspect of the present invention, there is provided a method of manufacturing an LED module, comprising the steps of: a) fabricating an epitaxial structure formed on a growth substrate, and an LED module having a first electrode and a second electrode formed on the epitaxial structure; b) bonding the prepared LED module to the support substrate to be fixed through the support substrate adhesive layer; c) removing the growth substrate from the LED module bonded to the support substrate and separating the growth substrate into individual epi structures having first and second electrodes; And d) the adhesive force of the support substrate adhesion layer is weakened through at least one of light or heat to the support substrate, so that the fixed LED module is separated from the support substrate individually or in an array form to improve the adhesive force with the epitaxial structure And transferring the carrier substrate to the carrier substrate or the target substrate having the carrier substrate protrusion formed on the carrier substrate main body.

In addition, the step b) according to the present invention may further include pressing the support substrate to a predetermined pressure to increase adhesion between the LED module and the support substrate.

In addition, the adhesion between the LED module and the support substrate in the step b) according to the present invention is performed at room temperature.

The step of separating into the individual epitaxial structure in the step c) according to the present invention may further comprise the step of forming a protective film for protecting the whole or a part of at least one of the separated epitaxial structure, the first electrode and the second electrode And further comprising:

The carrier substrate of step d) according to the present invention is characterized in that the carrier substrate body is made of at least one of a flexible material that flexibly and flexibly, or a rigid material that is rigid and rigid and does not bend well.

delete

In addition, the carrier substrate according to the present invention may further include a carrier substrate adhesive layer for supporting the LED module to be adhered to and fixed to the LED module.

Further, the carrier substrate according to the present invention may include: a second carrier substrate for preventing warpage of the carrier substrate body when the carrier substrate body is made of a flexible material; And a carrier substrate second adhesive layer for bonding the carrier substrate main body and the second carrier substrate.

Further, the adhesive strength of the carrier substrate second adhesive layer according to the present invention is characterized by having an adhesive strength equal to or lower than the adhesive strength of the carrier substrate adhesive layer.

The carrier substrate bonding layer or the carrier substrate second bonding layer according to the present invention is characterized in that the bonding strength is weakened through at least one of the light irradiated to the carrier substrate and the heat applied to the carrier substrate.

In the LED module transferred onto the carrier substrate according to the present invention, when the adhesive force of the carrier substrate adhesive layer is weakened, a part or all of the LED module is detached from the carrier substrate and transferred to the auxiliary carrier substrate or the target substrate And further comprising:

Further, the step d) according to the present invention may further comprise a photo patterning step of exposing a part of the first and second electrodes of the LED module, which is separated from the supporting substrate and transferred to the carrier substrate, to the atmosphere .

Further, the target substrate according to the present invention may be any one of a display substrate, a BLU substrate, an illumination substrate, a printed circuit substrate, and a flexible substrate.

The present invention has the advantage of forming LED structures with individual LEDs or LED arrays and allowing individual LEDs or LED arrays to be picked up and transported to a target substrate.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exemplary view showing a LED structure according to the present invention. FIG.
Fig. 2 is an exemplary view showing an LED module of the LED structure according to Fig. 1; Fig.
Fig. 3 is an illustration showing a support substrate of the LED structure according to Fig. 1; Fig.
FIG. 4 is an exemplary view showing a process of bonding the LED module and the support substrate of the LED structure according to FIG. 1;
Fig. 5 is an exemplary view showing a manufacturing process of an LED module in the LED structure according to Fig. 1; Fig.
6 is a view illustrating a process of transferring the LED structure according to the present invention.
Fig. 7 is an exemplary view showing a carrier substrate to which the LED structure according to Fig. 6 is transferred. Fig.
FIG. 8 is an exemplary view showing a process of transferring the LED structure according to FIG. 6 to a carrier substrate.
Fig. 9 is a view showing a process of transferring the LED structure according to Fig. 6 to an auxiliary carrier substrate. Fig.
FIG. 10 is an exemplary view showing a state in which the LED structure according to FIG. 6 is transferred to a target substrate.
11 is an exemplary view showing another embodiment of conveying the LED structure according to the present invention.
12 is an exemplary view showing a process of transporting the LED structure according to FIG.
13 is an exemplary view showing another embodiment of conveying the LED structure according to the present invention.
Fig. 14 is an exemplary view showing another embodiment of conveying the LED structure according to the present invention; Fig.
Fig. 15 is an exemplary view showing a process of transporting the LED structure according to Fig. 14; Fig.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a LED structure and a method of transferring the LED structure according to the present invention will be described in detail with reference to the accompanying drawings.

(Embodiment 1)

FIG. 1 is a view showing an LED structure according to the present invention, FIG. 2 is an illustration showing an LED module of the LED structure according to FIG. 1, FIG. 3 is an illustration showing a support substrate of the LED structure according to FIG. 1 And FIG. 4 is an exemplary view showing a process of bonding the LED module and the supporting substrate of the LED structure of FIG. 1, FIG. 5 is a view illustrating a manufacturing process of the LED module of the LED structure of FIG. FIG. 7 is a view illustrating a carrier substrate on which the LED structure according to FIG. 6 is transferred, and FIG. 8 is a cross-sectional view illustrating a process of transferring the LED structure according to the present invention to a carrier substrate FIG. 9 is a view illustrating a process of transferring the LED structure according to FIG. 6 to an auxiliary carrier substrate, and FIG. 10 is a view illustrating a state in which the LED structure according to FIG. 6 is transferred onto a target substrate. .

1 to 10, a plurality of LED modules 100 having a pn junction structure bonded to a support substrate 200 through a support substrate bonding layer 220 are irradiated with the support substrate 200 The adhesive force of the supporting substrate adhesive layer 220 is weakened through at least one of the light emitted from the supporting substrate 200 and the heat applied to the supporting substrate 200, As shown in FIG.

The LED module 100 is an LED module having a horizontal structure. The LED module 100 includes an epitaxial structure 120 from which the growth substrate 110 is removed, a first electrode 140 provided on the epitaxial structure 120, A second electrode pad 130, a second electrode pad 150, and a passivation layer 160.

That is, the LED module 100 includes an epitaxial structure 120 having a pn junction structure in which a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123 are sequentially formed on a growth substrate 110 It grows.

The growth substrate 110 may be a sapphire substrate or the like and a buffer layer (not shown) may be formed between the growth substrate 110 and the first semiconductor layer 121.

The first semiconductor layer 121 may be an n-type nitride semiconductor layer, and the second semiconductor layer 123 may be a p-type nitride semiconductor layer.

In addition, an n-GaN layer may be formed after the buffer layer is formed on the growth substrate 110 as needed. This buffer layer is used to reduce the lattice constant difference between the substrate and the semiconductor layer. Thus, an AlInN structure, an InGaN / GaN superlattice structure, an InGaN / GaN laminated structure, and a laminated structure of AlInGaN / InGaN / GaN.

When the upper surface of the first semiconductor layer 121 is exposed by performing a patterning and etching process so that the first semiconductor layer 121 may be exposed at a predetermined interval on the second semiconductor layer 123, A second electrode 130 is formed on the upper surface of the layer 123 and a first electrode 140 is formed on the exposed part of the first semiconductor layer 121, An electrode pad 150 may be provided.

The first and second electrodes 130 and 140 are formed of one or more materials or alloys selected from the group consisting of ITO, InO2, S3O2, Ni, Au, Pd, Ag, Pt and Ti.

The passivation layer 160 may be formed to prevent a short between the first electrode 140 and the second electrode pad 130 and the second electrode pad 150 and may be formed of SiO2, At least one selected material may be formed through SOG (Spin on Glass).

The passivation layer 160 may be deposited to protect the upper surface of the first electrode 140 and the entire upper surface of the second electrode pad 150 or may be deposited to protect the first electrode 140 and the second electrode pad 150 A portion of the first electrode 140 and the second electrode pad 150 may be exposed by depositing a passivation layer 160 over the entire region and then exposing a portion of the passivation layer 160 through patterning. Can be configured.

It is preferable that the LED module 100 is formed by the chip separation process using the isolation 170 so that the size of the LED module 100 is 5 to 300 μm. Is not limited to this.

The patterning and etching process, the formation of the second electrode 130, and the chip separation process by the first electrode 140 and the second electrode pad 150, the protective film 160, The process sequence can be changed.

For example, after the second electrode 130 is formed, the patterning and etching process may be performed. Alternatively, the passivation layer 160 may be formed after the isolation process 170. The patterning and etching process and the isolation process may be performed. The second electrode 130, the first electrode 140, and the second electrode pad 150 may be formed.

The support substrate 200 is bonded to the LED module 100 to support the LED module 100. When the light or heat having a predetermined wavelength range is supplied to separate the LED module 100, A structure in which the LED module 100 is separated from the support substrate 200 by an individual unit or an array unit due to weak adhesive force of the fixed LED module 100 includes a support substrate body 210 and a second support substrate 211, a support substrate adhesion layer 220, and a support substrate second adhesion layer 221. [

The support substrate 200 preferably has an ultraviolet (UV) wavelength range and may be transparent, translucent, or opaque. When the support substrate 200 is bonded to the LED module 100 The support substrate 200 may be pressed to the LED module 100 at a predetermined pressure to increase the adhesion between the LED module 100 and the support substrate 200.

The supporting substrate main body 210 is made of one of a flexible material that is flexible and a rigid material that is rigid and rigid and does not bend well, and is preferably made of a rigid material.

If the supporting substrate main body 210 is made of a flexible material, the flexible material may be any one of PDMS, PI, PET, PO, PVC, PC, PE, PP and PS.

When the support substrate main body 210 is made of a rigid material, the rigid material is made of any one of Si, GaAs, glass, sapphire, and plastic.

The support substrate 200 may further include a second support substrate 211 made of a rigid material to prevent the support substrate main body 210 from being bent when the support substrate main body 210 is made of a flexible material. A supporting substrate bonding layer 220 is formed on one side of the supporting substrate main body 210 and a supporting substrate second bonding layer 221 is formed on the other side of the supporting substrate main body 210, So that the support substrate 211 can be bonded.

That is, the second support substrate 211 improves the bending phenomenon of the epitaxial structure 120 when the growth substrate 110 is removed from the LED module 100, ) Can be increased.

Particularly, when the growth substrate 110 having a large area of 4 inches or more is used, bowing of the wafer occurs severely. By improving the warping of the wafer, it is possible to improve the yield of the LED module 100 Together, the photo patterning operation can be easily performed.

The supporting substrate main body 210 may be formed of an ultraviolet ray tape having a photoreactive material reacting with ultraviolet wavelengths. The supporting substrate main body 210 may be formed of, for example, The light reacting agent formed on the surface of the ultraviolet ray tape reacts to separate the LED module 100.

The second support substrate 211 may be made of any one of Si, GaAs, glass, sapphire, and plastic, and the second support substrate 211 may be made of a rigid substrate Is removed and then removed before the LED module 100 is transferred to the carrier substrate 300.

The supporting substrate bonding layer 220 is provided on one side of the supporting substrate main body 210 to adhere the LED module 100 to the supporting substrate main body 210. The supporting substrate bonding layer 220 preferably has a structure in which the ultraviolet And an adhesive material having a photoreactive material which reacts with the adhesive to weaken the adhesive strength, and preferably an acrylic adhesive material is deposited.

In the present embodiment, the adhesive material is described as an acrylic adhesive material, but the present invention is not limited thereto, and any adhesive material that can be adhered at room temperature can be used.

In addition, the supporting substrate bonding layer 220 may be composed of an adhesive material that weakens the adhesive force through heat applied from the outside, so that the adhesive force of the supporting substrate bonding layer 220 may be weakened by heat, so that the LED module 100 may be separated.

The supporting substrate bonding layer 220 may be formed by depositing an adhesive material on the entire area of the supporting substrate main body 210 and an adhesive layer pattern 220a having an arbitrary pattern on a part of the supporting substrate main body 210 So that the LED module 100 bonded to the supporting substrate main body 210 forms a predetermined pattern and can be arranged on the supporting substrate 200.

The supporting substrate second adhesive layer 221 deposited on the other side of the supporting substrate main body 210 is configured to adhere the supporting substrate main body 210 and the second supporting substrate 211 to each other, Is configured to have an adhesive strength equal to or lower than the adhesion strength of the support substrate adhesive layer 220 so that the second support substrate 211 is removed from the support substrate 200 after the removal process of the growth substrate 110 300 before it is transported.

The LED module 100 bonded to the support substrate 200 may be transferred to the carrier substrate 300 for moving the LED module 100 or the target substrate 500 on which the LED module 100 is mounted do.

The carrier substrate 300 is configured to transfer the LED module 100 from the support substrate 200 to the target substrate 500 and includes a carrier substrate body 310 and a second carrier substrate 311, a carrier substrate bonding layer 320, and a carrier substrate second bonding layer 321.

The carrier substrate main body 310 is made of one of a flexible material that is flexible and a rigid material that is rigid and rigid and does not bend easily and is easily adhered to the epitaxial structure 120 And the carrier substrate main body 310 may be formed using PI, PET, PO or the like so that ultraviolet rays (UV) can pass therethrough.

The carrier substrate main body 310 is formed with a carrier substrate protrusion 310a protruding by a predetermined length from an upper surface thereof to form an arbitrary pattern in order to improve adhesion with the LED module 100.

The carrier substrate protrusions 310a are formed such that the height P1 is 0 占 퐉 to 50 占 퐉 and the pitch P2 is 0 占 퐉 to 300 占 퐉. Here, 0 占 퐉 may be a state in which the carrier substrate projection part 310a does not protrude.

The second carrier substrate 311 is made of a rigid material so as to prevent the carrier substrate main body 310 from being bent when the carrier substrate main body 310 is made of a flexible material. The carrier substrate body 310 can be bonded to the carrier substrate body 310 through the second carrier bonding layer 321 applied to one side of the carrier substrate body 310.

The carrier substrate bonding layer 320 is deposited on the carrier substrate main body 310 and supports the LED module 100 to be adhered and fixed. The carrier substrate bonding layer 320 preferably has a weak adhesive force in response to light in an ultraviolet (UV) The adhesive material comprising the photoreactive material to be removed, preferably an acrylic adhesive material is deposited.

In the present embodiment, the adhesive material of the carrier substrate adhering layer 320 is described as an acrylic adhesive material, but not limited thereto, and any adhesive material capable of adhering at room temperature can be used.

An adhesive layer pattern (not shown) having an arbitrary pattern in a part of the carrier substrate main body 310 may be formed on the entire surface of the carrier substrate main body 310, The LED module 100 bonded to the carrier substrate main body 310 may be bonded to the carrier substrate 300 by forming an arbitrary pattern.

The carrier substrate second adhesive layer 321 is an adhesive material for bonding the carrier substrate main body 310 and the second carrier substrate 311 and is made of the same adhesive material as the carrier substrate adhesive layer 320, The adhesive strength of the adhesive layer 321 is configured to have an adhesive strength equal to or lower than the adhesive strength of the carrier substrate adhesive layer 320.

The adhesion between the carrier substrate bonding layer 320 and the carrier substrate second bonding layer 321 is weakened through light having an ultraviolet wavelength range irradiated onto the carrier substrate 300 or heat applied to the carrier substrate 300 , Preferably the ultraviolet rays to be irradiated weakens the adhesive force so that the LED module 100 can be separated.

The auxiliary carrier substrate 400 may be further configured so that the LED module 100 bonded to the carrier substrate 300 is moved to the target substrate 500 and transferred.

When the LED module 100 transferred to the carrier substrate 300 is transferred to the target substrate 500, the auxiliary carrier substrate 400 transfers the LED module 100 from the carrier substrate 300 to the target substrate 500 And includes an auxiliary carrier substrate main body 410, a second auxiliary carrier substrate 411, an auxiliary carrier substrate adhesive layer 420, and an auxiliary carrier substrate second adhesive layer 421.

The auxiliary carrier substrate main body 410 is made of one of a flexible material that is flexible and a rigid material that is rigidly rigid and does not bend well and is easily adhered to the epitaxial structure 120 And the auxiliary carrier substrate main body 410 may be formed using PI, PET, PO or the like so that ultraviolet rays (UV) can pass therethrough.

The auxiliary carrier substrate main body 410 is formed with auxiliary carrier substrate protrusions 410a protruding by a predetermined length from the top surface to form an arbitrary pattern in order to improve adhesion with the LED 100. [

The second auxiliary carrier substrate 411 is a substrate made of a rigid material to prevent the auxiliary carrier substrate main body 410 from being bent when the auxiliary carrier substrate main body 410 is made of a flexible material, The auxiliary carrier substrate body 410 may be bonded to the auxiliary carrier substrate body 410 through the second carrier substrate second adhesive layer 421 applied to one side of the carrier substrate 310.

The auxiliary carrier substrate adhesive layer 420 is deposited on the auxiliary carrier substrate body 410 and supports the LED module 100 to be adhered and fixed. The auxiliary carrier substrate adhesive layer 420 preferably has an adhesion force in response to light in the ultraviolet (UV) , An adhesive material having a photoreactive material which is weakened, preferably an acrylic adhesive material is deposited, and any adhesive material which can be adhered at room temperature can be used.

The auxiliary carrier substrate bonding layer 420 may be formed by depositing an adhesive material on the entire area of the auxiliary carrier substrate main body 410 and an adhesive layer pattern having an arbitrary pattern on a part of the auxiliary carrier substrate main body 410 The LED module 100 bonded to the auxiliary carrier substrate body 410 may form an arbitrary pattern and may be adhered to the auxiliary carrier substrate 400. [

The auxiliary carrier substrate second adhesive layer 421 is an adhesive material for bonding the auxiliary carrier substrate main body 410 to the second auxiliary carrier substrate 411 and is made of the same adhesive material as the auxiliary carrier substrate adhesive layer 420, The adhesion strength of the auxiliary carrier substrate second adhesive layer 421 is configured to have an adhesive strength equal to or lower than that of the auxiliary carrier substrate adhesive layer 420.

The auxiliary carrier substrate adhesive layer 420 and the auxiliary carrier substrate second adhesive layer 421 may be formed of a material having an ultraviolet wavelength range irradiated to the auxiliary carrier substrate 400 or a heat applied to the auxiliary carrier substrate 400 The adhesive force is weakened, and the adhesive force is weakened through the ultraviolet rays to be irradiated, so that the LED module 100 can be separated.

The target substrate 500 may include a display substrate, a BLU substrate, an illumination substrate, a printed circuit board having functional elements such as transistors, and a flexible substrate such as PI and PET. The target substrate 500 may include a support substrate 200, The LED module 100 attached to the auxiliary carrier substrate 400 or the like is selectively and entirely transferred and arrayed on the target substrate 500, And are electrically connected in series or in parallel.

The LED structure according to the present invention and its transfer process will be described below.

The LED module 100 grows an epitaxial structure 120 on which a first semiconductor layer 121, an active layer 122 and a second semiconductor layer 123 are sequentially formed on a growth substrate 110, A portion of the semiconductor layer 121 is etched to form a mesa and a second electrode 130 is deposited on the mesa-etched second semiconductor layer 123.

The first electrode 140 is deposited on the first semiconductor layer 121 and the second electrode pad 150 is formed on the second electrode 130. The epitaxial layer 120 and the first electrode And a protection film 160 for protecting the second electrode pad 150 are formed and separated into individual LED modules 100 through chip separation by the isolation 170.

The protective layer 160 may be formed to have an opening 160a so that a portion of the first electrode 140 and the second electrode pad 150 may be opened so that the LED module 100 having a horizontal structure to provide.

The upper surface of the LED module 100 on which the protective film 160 is formed is adhered to the support substrate 200 through the support substrate adhesion layer 220 to be fixed to the support substrate 200.

At this time, the support substrate 200 is bonded to the LED module 100 at room temperature, and a process of pressing the LED module 100 at a predetermined pressure may be added to increase the adhesive force.

After the adhesion of the LED module 100 to the support substrate 200 is completed, the growth substrate 110 is removed from the LED module 100 and the individual epitaxial structures having the first and second electrodes 130 and 140 120). ≪ / RTI >

The LED module 100 from which the growth substrate 110 has been removed may be provided with a carrier substrate 300 or a target substrate 500 disposed under the support substrate 200 for transfer to the carrier substrate 300 or the target substrate 500 And irradiates light having an ultraviolet wavelength range to the support substrate 200 to weaken the adhesive force of the support substrate adhesive layer 220 and then transports the support substrate 200 to the carrier substrate 300 for movement for additional photopatterning Or bonded to the carrier substrate 300 or the target substrate 500 for transfer to the target substrate 500 so that the LED modules 100a are transferred individually or in an array form.

When the bonding strength of the supporting substrate bonding layer 220 is 10 to 25 (gf / inch) after irradiation with ultraviolet light while maintaining the bonding strength of, for example, 100 to 300 (gf / inch) before irradiation with ultraviolet rays, The carrier substrate 300 or the target substrate 500 is adhered to the LED module 100 so that the LED modules 100 are separated from the support substrate 200 individually or in an array form and transferred.

In addition, the support substrate adhesive layer 220 may be lowered in adhesive strength by heat supplied from the outside.

In the case where the supporting substrate 200 is composed of the flexible supporting substrate main body 210 and the rigid second supporting substrate 211 before the bonding strength of the supporting substrate bonding layer 220 is made weak, ) Can be performed.

That is, if the bonding strength of the supporting substrate bonding layer 220 is higher than the bonding strength of the second supporting substrate bonding layer 221, even if ultraviolet rays are applied, The second supporting substrate 211 can be removed first.

The adjustment of the adhesive strength can be controlled by adjusting the thickness of the adhesive or the amount of the photosensitive material reactive with ultraviolet rays.

An adhesive material may be deposited on the carrier substrate 300 or the target substrate 500 in the process of transferring the LED module 100 from the support substrate 200. The carrier substrate 300 and the target substrate 500 may be bonded together, The LED module 100 can be easily transferred because the adhesive strength of the adhesive material deposited on the support substrate adhesion layer 220 is higher than that of the support substrate adhesion layer 220 having a weak adhesive force due to ultraviolet rays.

When the LED module 100 is transferred to the carrier substrate 300, an opening is formed in the protective film 160 through the photo patterning process so that the first electrode 140 and the second electrode pad 150 are exposed to the atmosphere Process can be performed.

An auxiliary carrier substrate 400 is disposed on the carrier substrate 300 for transferring the LED module 100 transferred to the carrier substrate 300. The carrier substrate 300 is irradiated with ultraviolet The auxiliary carrier substrate 400 is adhered to the LED module 100 for transferring the LED module 100 by irradiating light having a wavelength range to weaken the adhesive force of the carrier substrate adhesive layer 320, Are transferred to the auxiliary carrier substrate 400 in the form of individual or array.

When the LED module 100 is transferred to the auxiliary carrier substrate 400, the auxiliary carrier substrate 400 is moved to the target substrate 500 and the auxiliary carrier substrate 400 is irradiated with light having an ultraviolet wavelength range The adhesive strength of the auxiliary carrier substrate adhesive layer 420 is weakened and then the LED module 100 is bonded to the target substrate 500 so that the LED module 100 is transferred to the target substrate 500.

The LED module 100 transferred to the target substrate 500 is connected in series or parallel through wires (not shown) or electrode lines (not shown) to be electrically connected.

Thus forming a LED structure with individual LEDs or LED arrays and allowing individual LEDs or LED arrays to be picked up and transferred to the target substrate.

(Second Embodiment)

FIG. 11 is a view illustrating another embodiment of transferring the LED structure according to the present invention, and FIG. 12 is an exemplary view showing a process of transferring the LED structure according to FIG.

First, repetitive descriptions of the same components as those of the LED structure according to the first embodiment are omitted, and the same reference numerals are used for the same components.

11 and 12, the LED structure includes a plurality of LED modules 100a and a support substrate 200 having a support substrate adhesive layer 220 for supporting the LED modules 100a to be adhered and fixed to the LED modules 100a. And the LED module 100a is mounted on the supporting substrate 200 so that the adhesive force of the supporting substrate bonding layer 220 is weakened through at least one of the light irradiated to the supporting substrate 200 and the heat applied to the supporting substrate 200 So that the fixed LED modules 100a are separated from the supporting substrate 200 individually or in an array form.

The LED module 100a has a vertical structure and includes an epitaxial structure 120 on which a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123 are sequentially formed on a growth substrate 110 A second electrode 130 is formed on the second semiconductor layer 123 at regular intervals and the second electrode 130 is exposed to the outside of the epitaxial structure 120, The second electrode connection layer 150a is formed.

The second electrode 130 is made of one or more materials selected from the group consisting of ITO, InO2, S3O2, Ni, Au, Pd, Ag, Pt, and Ti. Ni, Ab, Pd, Pt, Mo. Au, Cu, ITO, InO2, SnO2, or an alloy thereof.

When the second electrode connection layer 150a is formed, the upper surface of the second electrode connection layer 150a is adhered and fixed to the support substrate 200 at room temperature, and a pressure of a predetermined magnitude Can be added.

After the LED module 100a is bonded to the support substrate 200, the growth substrate 110 is removed from the LED module 100a and the epitaxial structure 120 is mesa-etched and separated by the LED module 100a. do.

The first electrode 140 is formed on the first semiconductor layer 121 exposed through the removal of the growth substrate 110 and a part of the first electrode 140 and the epitaxial structure exposed through the etching process The LED module 100a has a vertical structure by forming a protective film 160 for protecting the LED module 100a.

In addition, the surface of the first semiconductor layer 121 exposed by removing the growth substrate 110 may be formed with irregularities 121a by a method such as dry etching or chemical etching.

The LED module 100a in which the first electrode 140 is formed is mounted on the carrier substrate 300 or the target substrate 500 in order to transfer the carrier substrate 300 or the target substrate 500 to the lower portion of the supporting substrate 200 And irradiating light having an ultraviolet wavelength range to the support substrate 200 to weaken the adhesive strength of the support substrate adhesion layer 220 and then transferring the support substrate 200 to the carrier substrate 300 for movement for further processing, Or may be bonded to the carrier substrate 300 or the target substrate 500 for transfer to the target substrate 500 so that the LED modules 100a are transferred individually or in an array form.

In addition, the support substrate adhesive layer 220 may be lowered in adhesive strength by heat supplied from the outside.

Thus forming a LED structure with individual LEDs or LED arrays and allowing individual LEDs or LED arrays to be picked up and transferred to the target substrate.

(Third Embodiment)

13 is an exemplary view showing another embodiment of conveying the LED structure according to the present invention.

First, repetitive descriptions of the same components as those of the LED structure according to the second embodiment are omitted, and the same reference numerals are used for the same components.

13, the LED structure includes a plurality of LED modules 100b and a support substrate 200 having a support substrate adhesive layer 220 for supporting the LED modules 100b to be adhered and fixed to the LED modules 100b, And the LED module 100b weakens the adhesion of the supporting substrate adhesive layer 220 through at least one of the light irradiated to the supporting substrate 200 and the heat applied to the supporting substrate 200, LED modules 100b are separated from the supporting substrate 200 in an individual or an array form.

The LED module 100b grows an epitaxial structure 120 on which a first semiconductor layer 121, an active layer 122 and a second semiconductor layer 123 are sequentially formed on a growth substrate 110, A second electrode 130 is formed on the second semiconductor layer 123 at a predetermined interval and a second electrode 130 is formed on the second electrode 130 to prevent heat from being emitted from the epitaxial structure 120, A connection layer 150a is provided.

When the second electrode connection layer 150a is formed, the upper surface of the second electrode connection layer 150a and the support substrate 200 are adhered and fixed at room temperature, and a pressure of a predetermined magnitude A pressing process may be added.

When the LED module 100b is bonded to the support substrate 200, the growth substrate 110 is removed from the LED module 100b and the second electrode connection layer 150a is formed by etching the epitaxial structure 120. [ And is separated into individual LED modules 100b through isolation.

A first electrode 140 is formed on the first semiconductor layer 121 exposed through the removal of the growth substrate 110 and a second electrode connection terminal 151 is formed on a part of the second electrode connection layer 150a. And a protective layer 160 is formed to expose a portion of the first electrode 140 and the second electrode connection terminal 151 and to protect the exposed epitaxial structure 120 through the etching process.

The LED module 100b having the first electrode 140 and the second electrode connection terminal 151 is mounted on a lower portion of the supporting substrate 200 to be transferred to the carrier substrate 300 or the target substrate 500 300 or a target substrate 500 is disposed on the support substrate 200. The support substrate 200 is irradiated with light having an ultraviolet wavelength range to weaken the adhesive strength of the support substrate adhesive layer 220. Then, The LED module 100b is transferred to the carrier substrate 300 or the target substrate 500 by transferring the LED module 100b individually or in an array form in order to carry out the transfer to the substrate 300 or transfer to the target substrate 500 .

In addition, the support substrate adhesive layer 220 may be lowered in adhesive strength by heat supplied from the outside.

Thus forming a LED structure with individual LEDs or LED arrays and allowing individual LEDs or LED arrays to be picked up and transferred to the target substrate.

(Fourth Embodiment)

FIG. 14 is an exemplary view showing another embodiment of conveying the LED structure according to the present invention, and FIG. 15 is an exemplary view showing a process of conveying the LED structure according to FIG.

First, repetitive descriptions of the same components as those of the LED structure according to the first embodiment are omitted, and the same reference numerals are used for the same components.

14 and 15, the LED structure includes a support substrate 200 having a plurality of LED modules 100c and a support substrate adhesive layer 220 for supporting the LED modules 100c by being adhered to the LED modules 100c, The adhesive force of the support substrate adhesive layer 220 is weakened through at least one of the light irradiated to the support substrate 200 and the heat applied to the support substrate 200, And the fixed LED module 100c is separated from the supporting substrate 200 in an individual or an array form.

The LED module 100c has a flip structure and includes an epitaxial structure 120 on which a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123 are sequentially formed on a growth substrate 110 A portion of the first semiconductor layer 121 is etched to expose the first semiconductor layer 121 and a second electrode 130 is deposited on the mesa-etched second semiconductor layer 123.

A first electrode 140 is deposited on the first semiconductor layer 121 and a second electrode pad 150 is formed on the second electrode 130. The second electrode pad 150 is electrically connected to the first electrode 140 The first electrode connection terminal 141 and the second electrode connection terminal 151 electrically connected to the second electrode pad 150 are formed so that the first and second electrode connection terminals 141 and 151 are insulated A protection film 160 for protecting the epitaxial structure 120 and reflecting light emitted from the epitaxial structure 120 is formed and separated into individual LED modules 100c through chip separation by isolation.

The protection layer 160 prevents a short between the first electrode 140 and the second electrode 130, the first electrode connection terminal 141 and the second electrode connection terminal 131, Ti, Pt, Pd, Cu, and the like may be formed through SOG (Spin on Glass) so that the light can be reflected in the upward direction, CuW, Mo, MoW and Ag.

The upper surface of the LED module 100c on which the protective layer 160 is formed is adhered to the support substrate 200 through the support substrate adhesion layer 220 to be fixed to the support substrate 200.

The supporting substrate 200 may be bonded at a normal temperature with the LED module 100c, and may be pressurized to a predetermined pressure to increase the adhesive force.

When the LED module 100c is bonded to the support substrate 200, the growth substrate 110 is removed from the LED module 100c to form a flip chip structure having the first and second electrode connection terminals 141 and 151 The LED module 100c is formed.

The LED module 100c from which the growth substrate 110 has been removed is provided with a carrier substrate 300 disposed under the support substrate 200 for transfer to the carrier substrate 300 and the ultraviolet wavelength range To weaken the adhesive force of the support substrate adhesive layer 220 and then to transfer the carrier substrate 300 in the form of an LED module 100c entirely or in an array for transfer for further processing or transfer to the target substrate 500. [ And the like.

The LED module 100c transferred to the carrier substrate 300 is moved so that the target substrate electrode 520 formed on the target substrate 500 and the first and second electrode connection terminals 141 and 151 are bonded together, Light having an ultraviolet wavelength range is irradiated to the substrate 300 to weaken the adhesive force of the carrier substrate 300 and then adhere to the target substrate 500 so that the LED modules 100c are transferred individually or in an array form.

In addition, the carrier substrate 300 may have an adhesive strength lowered by heat supplied from the outside, so that the LED module 100c may be transferred to the target substrate 500. [

Thus forming a LED structure with individual LEDs or LED arrays and allowing individual LEDs or LED arrays to be picked up and transferred to the target substrate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. It can be understood that

In the course of the description of the embodiments of the present invention, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, , Which may vary depending on the intentions or customs of the user, the operator, and the interpretation of such terms should be based on the contents throughout this specification.

100, 100a, 100b, 100c: LED module
110: growth substrate 120: epitaxial structure
121: first semiconductor layer 122: active layer
123: second semiconductor layer 130: second electrode
140: first electrode 141: first electrode connection terminal
150: second electrode pad 151: second electrode connection terminal
160: Protective film 170: Isolation
200: support substrate 210: support substrate body
211: second support substrate 220: support substrate adhesion layer
220a: adhesive layer pattern 221: supporting substrate second adhesive layer
300: Carrier substrate 310: Carrier substrate body
310a: carrier substrate protrusion 311: second carrier substrate
320: Carrier substrate bonding layer 321: Carrier substrate Second adhesive layer
400: auxiliary carrier substrate 410: auxiliary carrier substrate body
410a: auxiliary carrier substrate protruding portion 411: second auxiliary carrier substrate
420: Auxiliary Carrier Substrate Adhesion Layer 421: Secondary Carrier Substrate Second Adhesion Layer
500: target substrate 520: target substrate electrode

Claims (23)

A second support substrate 211 for preventing warpage of the support substrate body 210 and a second support substrate adhesion layer 221 for adhering the support substrate body 210 and the second support substrate 211, A plurality of LED modules 100, 100a, 100b having a pn junction structure adhered to a support substrate adhesive layer 220 of a support substrate 200 having a support substrate adhesive layer 220 provided on one side of a support substrate body 210 (100a, 100a) and the support substrate (200) by weakening the adhesive force of the support substrate adhesive layer (220) through at least one of the light irradiated to the support substrate (200) 100b, and 100c are separated from each other on the support substrate 200 in an individual or an array form.
The method according to claim 1,
Wherein the LED module (100, 100a, 100b, 100c) is one of a horizontal structure, a vertical structure, and a flip structure.
3. The method of claim 2,
Wherein the LED module 100 includes a first substrate 110 and a second substrate 120. The first substrate 110 includes a first substrate 110 and a second substrate 120, .
The method of claim 3,
The LED modules 100, 100a, 100b and 100c are separated into an individual epitaxial structure 120 having a first electrode 140 and a second electrode 130 and the separated epitaxial structure 120, Wherein at least one of the second electrode (140) and the second electrode (130) further comprises a protection layer (160) protecting the entire area or a part of the area.
The method according to claim 1,
Wherein the light emitted to the support substrate (200) has an ultraviolet (UV) wavelength range.
The method according to claim 1,
Wherein the support substrate 200 is made of at least one of a flexible material that flexibly and flexibly or a rigid material that is rigid and rigid and does not bend well.
delete The method according to claim 1,
Wherein the adhesive strength of the support substrate second adhesive layer (221) is equal to or lower than the adhesive strength of the support substrate adhesive layer (220).
The method according to claim 6,
Wherein the flexible material comprises one of PDMS, PI, PET, PO, PVC, PC, PE, PP, and PS.
The method according to claim 6,
Wherein the rigid material is made of one of Si, GaAs, glass, sapphire, and plastic.
a) an epitaxial structure formed on the growth substrate 110 and an LED module 100, 100a, 100b or 100c in which a first electrode 140 and a second electrode 130 are formed on the epitaxial structure 120, Producing;
b) bonding the manufactured LED module 100, 100a, 100b, 100c to the support substrate 200 to be fixed through the support substrate adhesive layer 220;
c) removing the growth substrate 110 from the LED modules 100, 100a, 100b and 100c adhered to the support substrate 200 and removing the growth substrate 110 from the individual epitaxial structure 120 having the first and second electrodes 130 and 140 ); And
d) the adhesive force of the support substrate adhesive layer 220 is weakened through at least one of light or heat to the support substrate 200 so that the fixed LED modules 100, 100a, 100b, And transferred to the carrier substrate 300 or the target substrate 500 having the carrier substrate protrusion 310a formed on the carrier substrate main body 310 in order to improve adhesion to the epitaxial structure 120 The method comprising the steps of:
12. The method of claim 11,
The step b) further includes pressing the support substrate 200 to a predetermined pressure to increase the adhesion between the LED modules 100, 100a, 100b, and 100c and the support substrate 200 Method of conveying LED structure.
12. The method of claim 11,
Wherein the bonding of the LED modules (100, 100a, 100b, 100c) and the supporting substrate (200) in the step b) is performed at room temperature.
12. The method of claim 11,
The step of separating the individual epitaxial structures 120 of step c) includes the step of protecting the whole or a part of at least one of the separated epitaxial structure 120, the first electrode 140 and the second electrode 130 And forming a passivation layer (160) on the surface of the LED structure.
12. The method of claim 11,
The carrier substrate 300 in the step d) is formed of at least one of a flexible material that flexibly and flexibly forms the carrier substrate body 310 or a rigid material that is rigidly rigid and does not bend well. Method of conveying structure.
delete 16. The method of claim 15,
Wherein the carrier substrate (300) further comprises a carrier substrate adhesive layer (320) for supporting the LED module (100, 100a, 100b, 100c) to adhere and fix the LED module (100, 100a, 100b, 100c).
18. The method of claim 17,
The carrier substrate 300 includes a second carrier substrate 311 that prevents flexure of the carrier substrate body 310 when the carrier substrate body 310 is made of a flexible material. And
Further comprising a carrier substrate second adhesive layer (321) for bonding the carrier substrate main body (310) to the second carrier substrate (311).
19. The method of claim 18,
Wherein the adhesive strength of the carrier substrate second adhesive layer (321) is equal to or lower than the adhesive strength of the carrier substrate adhesive layer (320).
19. The method of claim 18,
The adhesion strength of the carrier substrate bonding layer 320 or the carrier substrate second bonding layer 321 is weakened through at least one of the light irradiated to the carrier substrate 300 and the heat applied to the carrier substrate 300 Wherein the LED structure has a plurality of LEDs.
21. The method of claim 20,
When the adhesive force of the carrier substrate adhesive layer 320 is weakened, the LED modules 100, 100a, 100b, and 100c transferred to the carrier substrate 300 are partially or wholly And separating the carrier substrate (300) from the carrier substrate (300) and transferring the separated carrier substrate (400) or the target substrate (500).
12. The method of claim 11,
In the step d), the LED modules 100, 100a, 100b and 100c are separated from the supporting substrate 200, and the first and second LED modules 100, 100a, 100b and 100c transferred to the carrier substrate 300, Further comprising a photopatterning step of exposing a portion of the electrodes (130, 140) to the atmosphere.
12. The method of claim 11,
Wherein the target substrate (500) comprises any one of a display substrate, a BLU substrate, an illumination substrate, a printed circuit board, and a flexible substrate on which an arbitrary electrode pattern is formed.
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