CN111063693A - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
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- CN111063693A CN111063693A CN201911231434.1A CN201911231434A CN111063693A CN 111063693 A CN111063693 A CN 111063693A CN 201911231434 A CN201911231434 A CN 201911231434A CN 111063693 A CN111063693 A CN 111063693A
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention provides a display panel, a preparation method thereof and a display device, wherein the display panel comprises a display area and a non-display area surrounding the display area; and a substrate extending from the display region to the non-display region; the light resistance layer is arranged on the substrate of the display area; and the micro light-emitting diode layer is arranged on the substrate of the non-display area. The invention provides a display panel, a preparation method thereof and a display device.A white light resistance layer is coated on a substrate, so that the brightness of a micro light-emitting diode is improved, the manufacturing cost of a micro light-emitting diode backlight substrate is reduced, and the production yield is improved; meanwhile, the thin film transistor device can be protected, and the stability of the thin film transistor device is improved.
Description
Technical Field
The invention relates to the technical field of display panels, in particular to a display panel, a preparation method of the display panel and a display device.
Background
The micro light emitting diode (Mini LED) has two main applications in display, one is as a self-luminous LED display, similar to the small-pitch LED, and since no gold wire is required for packaging, the Mini LED can perform a smaller dot pitch display even on the same chip size as the small-pitch LED. The other is the application in being shaded, compares in traditional LED module in a poor light, and Mini LED backlight unit will adopt denser chip to arrange and reduce mixed light distance, accomplishes ultra-thin light source module. In addition, the Mini LED has better contrast and display effect by matching with the area control. The Mini LED is basically a full player in terms of several basic elements of display, including power consumption, cost, lifetime, dot spacing, brightness, contrast.
The method for driving the Mini LED to display on the glass substrate by the TFT process is a new field, and a layer of white oil is made on a PCB as a reflecting layer because the glass substrate is transparent and easily causes light damage, but the PCB has low processing precision, is easily covered with LED pads, has poor manufacturing process cleanliness and is not beneficial to the glass TFT processing.
Therefore, there is a need to develop a new display panel to overcome the drawbacks of the prior art.
Disclosure of Invention
An object of the present invention is to provide a display panel, which can solve the problem that the glass substrate is easy to cause the light loss of the micro light emitting diode in the prior art.
In order to achieve the above object, the present invention also provides a display panel including a display area and a non-display area surrounding the display area; and a substrate extending from the display region to the non-display region; the light resistance layer is arranged on the substrate of the display area; and the micro light-emitting diode layer is arranged on the substrate of the non-display area.
Further, in other embodiments, wherein the substrate comprises: a substrate layer extending from the display area to the non-display area; a gate layer; the substrate layer is arranged on the display area; a gate insulating layer disposed on the substrate layer and the gate layer and extending from the display region to the non-display region; an active layer disposed on the gate insulating layer of the display region; the source drain layer is arranged on the active layer and the gate insulation layer of the non-display area; the flat layer is arranged on the source drain layer and the grid insulation layer of the display area; the pixel electrode layer is arranged on the flat layer and is connected with the gate electrode layer; the light resistance layer is arranged on the pixel electrode layer and the flat layer, and the micro light-emitting diode layer is arranged on the source drain electrode layer of the non-display area.
Further, in other embodiments, the photoresist layer is a positive photoresist or a negative photoresist.
Further, in other embodiments, the photoresist layer is a white reflective material.
Further, in other embodiments, wherein the photoresist layer has a thickness of 0.8 to 3 um.
Another object of the present invention is to provide a manufacturing method for manufacturing the display panel according to the present invention, the display panel including a display area and a non-display area surrounding the display area, the manufacturing method including the steps of: providing a substrate extending from the display area to the non-display area; preparing a photoresist layer on the substrate of the display area; and preparing a micro light-emitting diode layer on the substrate of the non-display area.
Further, in other embodiments, wherein the micro light emitting diode layer is prepared by a patch process.
Further, in other embodiments, wherein the photoresist layer is prepared by coating.
Further, in other embodiments, the step of providing a substrate includes providing a substrate layer extending from the display area to the non-display area; preparing a gate layer on the substrate layer of the display area; preparing a gate insulating layer on the substrate layer and the gate electrode layer, the gate insulating layer extending from the display region to the non-display region; preparing an active layer on the gate insulating layer of the display region; preparing a source drain layer on the active layer and the gate insulating layer of the non-display area; preparing a flat layer on the source drain layer and the gate insulating layer of the display area; preparing a pixel electrode layer on the flat layer, wherein the pixel electrode layer is connected with the gate electrode layer; the light resistance layer is arranged on the pixel electrode layer and the flat layer, and the micro light-emitting diode layer is arranged on the source drain electrode layer of the non-display area.
Further, in other embodiments, the substrate layer is made of a glass substrate.
Further, in other embodiments, the material of the gate layer is at least one of molybdenum metal or titanium metal.
Further, in other embodiments, the material of the gate insulating layer is at least one of silicon nitride, silicon oxide, or silicon oxynitride.
In order to achieve the above object, the present invention further provides a display device including the display panel according to the present invention.
Compared with the prior art, the invention has the beneficial effects that: the invention provides a display panel, a preparation method thereof and a display device.A white light resistance layer is coated on a substrate, so that the brightness of a micro light-emitting diode is improved, the manufacturing cost of a micro light-emitting diode backlight substrate is reduced, and the production yield is improved; meanwhile, the thin film transistor device can be protected, and the stability of the thin film transistor device is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of the display panel manufacturing method in step S1 according to the embodiment of the present invention;
fig. 4 is a schematic structural diagram of the method for manufacturing a display panel according to the embodiment of the present invention in step S3;
fig. 5 is a schematic structural diagram of the method for manufacturing a display panel according to the embodiment of the present invention in step S3.
Reference numerals in the detailed description:
a display panel-100;
display area-101; non-display area-102;
a substrate-110; a photoresist layer-120;
micro light emitting diode layer-130;
a substrate layer-111; a gate layer-112;
a gate insulating layer-113; an active layer-114;
a source drain layer-115; a planarization layer-116;
and a pixel electrode layer-117.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Specific structural and functional details disclosed herein are merely representative and are provided for purposes of describing example embodiments of the present invention. The present invention may, however, be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel 100 provided in the present embodiment. The display panel 100 includes a display area 101 and a non-display area surrounding the display area 101, as well as a substrate 110, a photoresist layer 120, and a micro light emitting diode layer 130.
The substrate 110 includes: a substrate layer 111 extending from the display area 101 to the non-display area 102; a gate layer 112; arranged on the substrate layer 111 of the display area 101; a gate insulating layer 113 disposed on the substrate 110 and the gate layer 112 and extending from the display region 101 to the non-display region 102; an active layer 114 disposed on the gate insulating layer 113 of the display region 101; a source drain layer 115 disposed on the active layer 114 and on the gate insulating layer 113 of the non-display region 102; a planarization layer 116 disposed on the source/drain layer 115 and the gate insulating layer 113 of the display region 101; the pixel electrode layer 117 is disposed on the planarization layer 116 and is connected to the gate layer 112.
The substrate layer 111 is made of a glass substrate 110, the gate layer 112 is made of at least one of molybdenum metal or titanium metal, the active layer 114 is made of at least one of indium-gallium-zinc oxide and indium-zinc-tin oxide, the source/drain layer 115 is made of at least one of molybdenum, aluminum, copper or titanium metal, and the gate insulating layer 113 is made of at least one of silicon nitride, silicon oxide or silicon oxynitride.
A photoresist layer 120 disposed on the pixel electrode layer 117 and the planarization layer 116, and a micro led layer 130 disposed on the source/drain layer 115 of the non-display region 102.
The photoresist layer 120 is a positive photoresist or a negative photoresist, the photoresist layer 120 is a white reflective material, and the thickness of the photoresist layer 120 is 0.8-3 um.
A white photoresist layer 120 is coated on the substrate 110, so that the brightness of the micro light-emitting diode is improved, the manufacturing cost of the micro light-emitting diode backlight substrate 110 is reduced, and the production yield is improved; meanwhile, the thin film transistor device can be protected, and the stability of the thin film transistor device is improved.
Another object of the present invention is to provide a manufacturing method for manufacturing the display panel 100 according to the present invention, wherein the display panel 100 includes a display area 101 and a non-display area 102 surrounding the display area 101. Referring to fig. 2, fig. 2 is a flowchart illustrating a manufacturing method according to the present embodiment, including the following steps S1-S3.
Step S1: providing a substrate 110, wherein the substrate 110 extends from the display area 101 to the non-display area 102; referring to fig. 3, fig. 3 is a schematic structural diagram of the manufacturing method of the display panel provided in this embodiment in step S1.
The step of providing a substrate 110 comprises providing a substrate layer 111, the substrate layer 111 extending from the display area 101 to the non-display area 102; preparing a gate layer 112 on the substrate layer 111 of the display region 101; preparing a gate insulating layer 113 on the substrate 110 and the gate layer 112, wherein the gate insulating layer 113 extends from the display region 101 to the non-display region 102; preparing an active layer 114 on the gate insulating layer 113 of the display region 101; preparing a source drain layer 115 on the active layer 114 and the gate insulating layer 113 of the non-display region 102; preparing a flat layer 116 on the source drain layer 115 and the gate insulating layer 113 of the display region 101; a pixel electrode layer 117 is formed on the planarization layer 116, and the pixel electrode layer 117 is connected to the gate layer 112.
Step S2: preparing a photoresist layer 120 on the pixel electrode layer 117 and the planarization layer 116 in the display region 101; referring to fig. 4, fig. 4 is a schematic structural diagram of the display panel manufacturing method provided in this embodiment in step S2.
Wherein the photoresist layer 120 is prepared by coating.
Step S3: preparing a micro light emitting diode layer 130 on the source drain layer 115 of the non-display region 102; referring to fig. 5, fig. 5 is a schematic structural diagram of the display panel manufacturing method provided in this embodiment in step S3.
Wherein the micro light emitting diode layer 130 is prepared by a patch process.
The present embodiment further provides a display device including the display panel 100 according to the present embodiment.
The invention has the beneficial effects that: the invention provides a display panel, a preparation method thereof and a display device.A white light resistance layer is coated on a substrate, so that the brightness of a micro light-emitting diode is improved, the manufacturing cost of a micro light-emitting diode backlight substrate is reduced, and the production yield is improved; meanwhile, the thin film transistor device can be protected, and the stability of the thin film transistor device is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A display panel characterized by comprising a display area and a non-display area surrounding the display area; and
a substrate extending from the display region to the non-display region;
the light resistance layer is arranged on the substrate of the display area;
and the micro light-emitting diode layer is arranged on the substrate of the non-display area.
2. The display panel according to claim 1, wherein the substrate comprises:
a substrate layer extending from the display area to the non-display area;
a gate layer; the substrate layer is arranged on the display area;
a gate insulating layer disposed on the substrate layer and the gate layer and extending from the display region to the non-display region;
an active layer disposed on the gate insulating layer of the display region;
the source drain layer is arranged on the active layer and the gate insulation layer of the non-display area;
the flat layer is arranged on the source drain layer and the grid insulation layer of the display area;
the pixel electrode layer is arranged on the flat layer and is connected with the gate electrode layer;
the light resistance layer is arranged on the pixel electrode layer and the flat layer, and the micro light-emitting diode layer is arranged on the source drain electrode layer of the non-display area.
3. The display panel according to claim 1, wherein the photoresist layer is a positive photoresist or a negative photoresist.
4. The display panel of claim 1, wherein the light blocking layer is a white light reflecting material.
5. The display panel according to claim 1, wherein the photoresist layer has a thickness of 0.8-3 um.
6. A manufacturing method for manufacturing the display panel according to claim 1, the display panel including a display area and a non-display area surrounding the display area, the manufacturing method comprising the steps of:
providing a substrate extending from the display area to the non-display area;
preparing a photoresist layer on the substrate of the display area;
and preparing a micro light-emitting diode layer on the substrate of the non-display area.
7. The method of claim 6, wherein the micro light emitting diode layer is prepared by a patch process.
8. The display panel according to claim 1, wherein the photoresist layer is prepared by coating.
9. The display panel of claim 6, wherein the step of providing a substrate comprises
Providing a substrate layer extending from the display area to the non-display area;
preparing a gate layer on the substrate layer of the display area;
preparing a gate insulating layer on the substrate layer and the gate electrode layer, the gate insulating layer extending from the display region to the non-display region;
preparing an active layer on the gate insulating layer of the display region;
preparing a source drain layer on the active layer and the gate insulating layer of the non-display area;
preparing a flat layer on the source drain layer and the gate insulating layer of the display area;
preparing a pixel electrode layer on the flat layer, wherein the pixel electrode layer is connected with the gate electrode layer;
the light resistance layer is arranged on the pixel electrode layer and the flat layer, and the micro light-emitting diode layer is arranged on the source drain electrode layer of the non-display area.
10. A display device comprising the display panel according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911231434.1A CN111063693A (en) | 2019-12-05 | 2019-12-05 | Display panel, preparation method thereof and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911231434.1A CN111063693A (en) | 2019-12-05 | 2019-12-05 | Display panel, preparation method thereof and display device |
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| CN111063693A true CN111063693A (en) | 2020-04-24 |
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| CN201911231434.1A Pending CN111063693A (en) | 2019-12-05 | 2019-12-05 | Display panel, preparation method thereof and display device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584511A (en) * | 2020-05-14 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN112768590A (en) * | 2020-12-30 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
| CN113345864A (en) * | 2021-06-07 | 2021-09-03 | 成都辰显光电有限公司 | Driving backboard and micro light-emitting diode display panel |
| WO2021233437A1 (en) * | 2020-05-22 | 2021-11-25 | 海信视像科技股份有限公司 | Display device |
| CN113763837A (en) * | 2021-11-09 | 2021-12-07 | Tcl华星光电技术有限公司 | Mixed connection panel and spliced panel |
| CN114217467A (en) * | 2021-12-10 | 2022-03-22 | Tcl华星光电技术有限公司 | Preparation method of display device, display device and splicing display device |
| US11374036B2 (en) | 2020-05-14 | 2022-06-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, manufacturing method thereof, and display device |
| WO2022183602A1 (en) * | 2021-03-02 | 2022-09-09 | Tcl华星光电技术有限公司 | Method for manufacturing mini led backlight panel, and mini led backlight panel |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11374036B2 (en) | 2020-05-14 | 2022-06-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, manufacturing method thereof, and display device |
| CN111584511B (en) * | 2020-05-14 | 2021-08-03 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111584511A (en) * | 2020-05-14 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
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| WO2021233437A1 (en) * | 2020-05-22 | 2021-11-25 | 海信视像科技股份有限公司 | Display device |
| CN112768590A (en) * | 2020-12-30 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
| WO2022183602A1 (en) * | 2021-03-02 | 2022-09-09 | Tcl华星光电技术有限公司 | Method for manufacturing mini led backlight panel, and mini led backlight panel |
| CN113345864A (en) * | 2021-06-07 | 2021-09-03 | 成都辰显光电有限公司 | Driving backboard and micro light-emitting diode display panel |
| CN113345864B (en) * | 2021-06-07 | 2023-07-25 | 成都辰显光电有限公司 | Driving backboard and miniature light-emitting diode display panel |
| CN113763837A (en) * | 2021-11-09 | 2021-12-07 | Tcl华星光电技术有限公司 | Mixed connection panel and spliced panel |
| WO2023082317A1 (en) * | 2021-11-09 | 2023-05-19 | Tcl华星光电技术有限公司 | Hybrid panel and tiled panel |
| CN114217467A (en) * | 2021-12-10 | 2022-03-22 | Tcl华星光电技术有限公司 | Preparation method of display device, display device and splicing display device |
| CN114217467B (en) * | 2021-12-10 | 2024-01-23 | Tcl华星光电技术有限公司 | Display device manufacturing method, display device and spliced display device |
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