CN202662652U - Thin-film solar cell - Google Patents
Thin-film solar cell Download PDFInfo
- Publication number
- CN202662652U CN202662652U CN2012202081404U CN201220208140U CN202662652U CN 202662652 U CN202662652 U CN 202662652U CN 2012202081404 U CN2012202081404 U CN 2012202081404U CN 201220208140 U CN201220208140 U CN 201220208140U CN 202662652 U CN202662652 U CN 202662652U
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- thin
- layer
- film solar
- type doping
- doped layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The utility model discloses a thin-film solar cell, comprising an antireflection film substrate. An insulating layer is deposited on the substrate. A plurality of transverse p-i-n nodes are grown on the insulating layer. Each p-i-n node respectively comprises an n-type doping layer, an intrinsic layer, and a p-type doping layer which have vertical structures and are arranged sequentially. Each intrinsic layer is respectively provided with a back reflecting mirror. Each of the n-type doping layers and the p-type doping layers is provided with a metal electrode. The thin-film solar cell provided by the utility model is capable of effectively preventing the light absorption loss of dead layers of the n-type doping layers and the p-type doping layers as well as the light loss due to light blocking by a grid line and increasing the reflecting of light in the interior of the cell. Thus, the transition efficiency of the cell can be effectively improved. Moreover, the aforementioned technical scheme can be applied to various types of thin-film solar cells.
Description
Technical field
The utility model relates to solar cell, particularly a kind of thin-film solar cells.
Background technology
The structure of present conventional hull cell as shown in Figure 1.Ground floor is simple glass 1, is the battery carrier.The second layer is the transparent conductive film 2 (TCO) of matte.TCO is prepared into matte and plays the catoptrical effect of minimizing.The 3rd layer is p-type doped layer 3, i.e. Window layer.The 4th layer is i layer 4, i.e. the intrinsic layer of solar cell, photo-generated carrier mainly produce at this one deck.The 5th is N-shaped doped layer 5, plays the effect that connects i and back electrode.Back electrode 6 and Al/Ag electrode 7 at last.
As seen, the p-type doped layer of conventional hull cell is parallel with the Intrinsic Gettering layer, and is positioned at the top of Intrinsic Gettering layer, and incident light enters absorbed layer again through doped layer first.Because the i district is the photosensitive area in the p-i-n structure, light induced electron, hole are the sources of photovoltaic electric power in this district, and the two-layer doping of p, n exists as " dead layer ", mainly work to provide electric field, and the charge carrier in their zones works hardly to photoelectric current, so should reduce doped layer to Optical Absorption, reduce light loss as far as possible.
The utility model content
The purpose of this utility model can reduce doped layer to Optical Absorption in order to provide a kind of exactly as far as possible, reduces the thin-film solar cells of light loss.
To achieve these goals, the utility model has adopted following technical scheme: a kind of thin-film solar cells, comprise the antireflective coating substrate, deposit insulating barrier in the substrate, in the insulating barrier growth a plurality of horizontal p-i-n knots are arranged, each p-i-n knot is sequentially arranged by the N-shaped doped layer with vertical stratification, intrinsic layer and p-type doped layer respectively and forms, and has respectively back reflector on each intrinsic layer, has respectively metal electrode on each N-shaped doped layer and each p-type doped layer.
The series connection of described a plurality of horizontal p-i-n knot.
Described antireflective coating substrate is the electro-conductive glass that deposits the matte transparent conductive film.
Described back reflector is made by ZnO+Al, ZnO+Ag+Al, TCO+Al, TCO+Ag+Al, Ag+Al or Al and is formed.
Described metal electrode is aluminium or silver.
The utility model makes it compared with prior art owing to having adopted above technical scheme, has following advantage and disadvantage:
1, doped layer is perpendicular to substrate surface, and light is directly incident on the Intrinsic Gettering layer without doped layer, can effectively reduce the incident light loss;
2, back reflector can increase the index matching of N-shaped doped layer and back electrode, and then reaches increase light in the reflection of inside battery, the effect of minimizing transmission;
3, the back metal electrode can only draw the both sides electrode out, carries out sub-battery series connection.Output voltage is high, can be used for special occasions.
Description of drawings
Fig. 1 is the structural representation of the conventional thin-film solar cells of prior art.
Fig. 2 is the sectional structure schematic diagram of the utility model thin-film solar cells.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is elaborated.
Referring to Fig. 2, a kind of thin-film solar cells of the present utility model comprises antireflective coating substrate (being made of substrate of glass 1 and antireflective coating 2), deposits insulating barrier 10 in the substrate, in insulating barrier 10 growths a plurality of horizontal p-i-n knots, the series connection of a plurality of horizontal p-i-n knot are arranged.Each p-i-n knot is arranged by the N-shaped doped layer 5 with vertical stratification, intrinsic layer 4 and p-type doped layer 3 orders respectively and forms, has respectively back reflector 11 on each intrinsic layer 4, have respectively metal electrode 9 on each N-shaped doped layer 5, have respectively metal electrode 8 on each p-type doped layer 8.
Antireflective coating substrate in the utility model is the electro-conductive glass that deposits the matte transparent conductive film.
Back reflector in the utility model is made by ZnO+Al, ZnO+Ag+Al, TCO+Al, TCO+Ag+Al, Ag+Al or Al and is formed.
Metal electrode in the utility model is aluminium or silver.
Claims (4)
1. thin-film solar cells, it is characterized in that: comprise the antireflective coating substrate, deposit insulating barrier in the substrate, in the insulating barrier growth a plurality of horizontal p-i-n knots are arranged, each p-i-n knot is sequentially arranged by the N-shaped doped layer with vertical stratification, intrinsic layer and p-type doped layer respectively and forms, have respectively back reflector on each intrinsic layer, have respectively metal electrode on each N-shaped doped layer and each p-type doped layer.
2. thin-film solar cells as claimed in claim 1 is characterized in that: the series connection of described a plurality of horizontal p-i-n knot.
3. thin-film solar cells as claimed in claim 1, it is characterized in that: described antireflective coating substrate is the electro-conductive glass that deposits the matte transparent conductive film.
4. thin-film solar cells as claimed in claim 1, it is characterized in that: described metal electrode is aluminium or silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012202081404U CN202662652U (en) | 2012-05-09 | 2012-05-09 | Thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012202081404U CN202662652U (en) | 2012-05-09 | 2012-05-09 | Thin-film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202662652U true CN202662652U (en) | 2013-01-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012202081404U Expired - Lifetime CN202662652U (en) | 2012-05-09 | 2012-05-09 | Thin-film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202662652U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390679A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Thin film solar cell and manufacturing method thereof |
-
2012
- 2012-05-09 CN CN2012202081404U patent/CN202662652U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390679A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Thin film solar cell and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130109 |
|
| CX01 | Expiry of patent term |