CN219679160U

CN219679160U - Photovoltaic cell

Info

Publication number: CN219679160U
Application number: CN202221977448.5U
Authority: CN
Inventors: 张准; 林彦志; 林于庭
Original assignee: Huasheng Group Co ltd
Current assignee: Huasheng Group Co ltd
Priority date: 2022-07-28
Filing date: 2022-07-28
Publication date: 2023-09-12
Anticipated expiration: 2032-07-28

Abstract

The present utility model provides a photovoltaic cell comprising: a 1 st transparent conductive film; a 2 nd transparent conductive film; a 1 st pn junction, a 2 nd pn junction, and a 3 rd pn junction arranged in this order from the 1 st transparent conductive film to the 2 nd transparent conductive film, wherein the 1 st pn junction includes a 1 st energy gap, the 2 nd pn junction includes a 2 nd energy gap, and the 3 rd pn junction includesThe 3 rd energy gap has the following limitation conditions: the 1 st energy gap, the 2 nd energy gap and the 3 rd energy gap satisfy that the 2 nd energy gap is less than or equal to the 1 st energy gap plus 0.5eV and the 2 nd energy gap is less than or equal to the 3 rd energy gap plus 0.5eV. The double-sided light absorption photovoltaic cell has improved external quantum efficiency, photoelectric conversion efficiency, filling factor, open circuit voltage (V) _OC ) And/or short-circuit current (J) _SC )。

Description

Photovoltaic cell

Technical Field

The utility model provides a photovoltaic cell. The present utility model provides a photovoltaic cell comprising silicon, in particular a photovoltaic cell comprising amorphous silicon or monocrystalline silicon. The present utility model provides a photovoltaic cell comprising a copper indium gallium diselenide (CIGS) thin film. The present utility model provides a photovoltaic cell comprising an organic film. The utility model further provides a photovoltaic cell stack comprising a plurality of photovoltaic cells.

Background

The photovoltaic cells of the prior art can be broadly classified into silicon-based photovoltaic cells, thin film photovoltaic cells, organic photovoltaic cells, and compound semiconductor photovoltaic cells. The silicon-based photovoltaic cells are used as a bulk material, because the production technology and equipment of the silicon-based photovoltaic cells are quite mature. Compound semiconductor photovoltaic cells are commonly used in concentrating photovoltaic cells.

In order to further improve the efficiency of the photovoltaic cell, compound semiconductor layers with different energy gaps can be stacked to form a multi-junction structure, and the semiconductor layers with different energy gaps are utilized to absorb light with different wavelengths so as to improve the efficiency of the photovoltaic cell. However, the fabrication process of the multi-junction compound semiconductor photovoltaic cell structure is complex and difficult and very costly. In addition, the compound semiconductor absorption layers with different energy gaps must be grown in the multi-junction structure, however, when the energy gaps between the absorption layers are matched, the lattice constants are not matched, so that the crystallization quality of each absorption layer is difficult to improve, and the efficiency of the multi-junction compound semiconductor photovoltaic cell is further limited. In addition, the semiconductor layers with different energy gaps have different photoelectric conversion efficiencies, so that the intensities of photocurrents generated after irradiation are different, and the output intensity of the whole current of the photovoltaic cell is affected when the current matching degree is poor due to the overlarge difference of the intensities of photocurrents generated by the compound semiconductor layers.

Therefore, there is a continuing need in the art to improve photovoltaic cell external quantum efficiency, photoelectric conversion efficiency, fill factor, open circuit voltage (V _OC ) And/or short-circuit current (J) _SC ) Is not limited to the above-mentioned requirements.

Disclosure of Invention

The present utility model provides a photovoltaic cell comprising:

a 1 st transparent conductive film;

a 2 nd transparent conductive film;

a 1 st pn junction, a 2 nd pn junction, and a 3 rd pn junction arranged in this order from the 1 st transparent conductive film to the 2 nd transparent conductive film, wherein the 1 st pn junction includes a 1 st energy gap, the 2 nd pn junction includes a 2 nd energy gap, and the 3 rd pn junction includes a 3 rd energy gap, provided that:

the 1 st energy gap, the 2 nd energy gap and the 3 rd energy gap satisfy

The 2 nd energy gap is less than or equal to the 1 st energy gap plus 0.5eV, and the 2 nd energy gap is less than or equal to the 3 rd energy gap plus 0.5eV.

The photovoltaic cell of the preceding claim, wherein the energy gap of the 1 st transparent conductive film or the 2 nd transparent conductive film is greater than 2.2eV.

The photovoltaic cell of any preceding claim, wherein the 1 st transparent conductive film or the 2 nd transparent conductive film has an average light transmittance of greater than 85% over the visible wavelength range.

The photovoltaic cell of the preceding claim, wherein the 1 st transparent conductive film comprises Indium Tin Oxide (ITO).

The photovoltaic cell of the preceding claim, wherein the 2 nd transparent conductive film comprises Indium Tin Oxide (ITO), indium doped zinc oxide (In: znO), aluminum doped zinc oxide (Al: znO), gallium doped zinc oxide (Ga: znO), boron doped zinc oxide (B: znO), hydrogen doped indium oxide (InO: H), fluorine doped indium oxide (F: in) ₂ O ₃ ) Or fluorine doped tin oxide (SnO) ₂ :F)。

The photovoltaic cell of any preceding claim, wherein said 2 nd energy gap comprises an indirect energy gap.

The photovoltaic cell of any preceding claim, wherein said 1 st energy gap comprises a direct energy gap.

The photovoltaic cell of any preceding claim, wherein said 3 rd energy gap comprises a direct energy gap.

The photovoltaic cell of the preceding claim, wherein the 2 nd energy gap ranges from 0.5 to 1.5eV.

The photovoltaic cell of the preceding claim, wherein the 1 st energy gap ranges from 1 to 4eV.

The photovoltaic cell of the preceding claim, wherein the 3 rd energy gap ranges from 1 to 4eV.

As described hereinbeforeWherein the ratio of the thickness of the 1 st pn junction to the 2 nd pn junction is less than or equal to 10 in the direction connecting the 1 st transparent conductive film and the 2 nd transparent conductive film ^-3 。

The photovoltaic cell of the preceding claim, wherein the thickness ratio of the 3 rd pn junction to the 2 nd pn junction in the direction connecting the 1 st transparent conductive film and the 2 nd transparent conductive film is less than or equal to 10 ^-3 。

The present utility model further provides a photovoltaic cell comprising:

a 1 st transparent conductive film;

a 2 nd transparent conductive film;

a 1 st pn junction, a 2 nd pn junction, and a 3 rd pn junction arranged in this order from the 1 st transparent conductive film to the 2 nd transparent conductive film, wherein the polarity directions of the 1 st pn junction and the 2 nd pn junction are opposite, and the polarity directions of the 1 st pn junction and the 3 rd pn junction are the same.

The photovoltaic cell of the preceding claim, wherein the 2 nd transparent conductive film comprises Indium Tin Oxide (ITO), indium doped zinc oxide (In: znO), aluminum doped zinc oxide (Al: znO), gallium doped zinc oxide (Ga: znO), boron doped zinc oxide (B: znO), hydrogen doped indium oxide (InO: H), fluorine doped indium oxide (F: in) ₂ O ₃ ) Or fluorine doped tin oxide (SnO 2: F).

The photovoltaic cell of the preceding claim, wherein the 2 nd pn junction comprises polysilicon or monocrystalline silicon.

The photovoltaic cell of the preceding claim, wherein the 1 st pn junction comprises a photosensitive conductive polymer, a polymer having a number average molecular weight (Mn) of 1,000, such as, but not limited to: polymers with Mn less than or equal to 200, mn less than or equal to 400, mn less than or equal to 500, mn less than or equal to 600, mn less than or equal to 800, or Mn less than or equal to 1,000, organometal halide perovskite, copper Indium Gallium Selenide (CIGS), perovskite oxide, amorphous silicon, group II-VI compounds, or group III-V compounds.

The photovoltaic cell of the preceding claim, wherein the 3 rd pn junction comprises a photoactive conductive polymer, a polymer having Mn +.1,000, such as but not limited to: polymers with Mn less than or equal to 200, mn less than or equal to 400, mn less than or equal to 500, mn less than or equal to 600, mn less than or equal to 800, or Mn less than or equal to 1,000, organometal halide perovskite, copper Indium Gallium Selenide (CIGS), perovskite oxide, amorphous silicon, group II-VI compounds, or group III-V compounds.

The photovoltaic cell of any preceding claim, further comprising a 3 rd transparent conductive film located between the 1 st pn junction and the 2 nd pn junction.

The photovoltaic cell of any preceding claim, further comprising a 4 th transparent conductive film located between the 2 nd pn junction and the 3 rd pn junction.

The photovoltaic cell of the preceding claim, wherein the 3 rd transparent conductive film is electrically connected to the 2 nd transparent conductive film.

The photovoltaic cell of the preceding claim, wherein the 4 th transparent conductive film is electrically connected to the 1 st transparent conductive film.

The present utility model further provides a photovoltaic cell stack comprising:

1 st electrode;

a 2 nd electrode; and

a 1 st photovoltaic cell, a 2 nd photovoltaic cell, and a 3 rd photovoltaic cell arranged in order from the 1 st electrode to the 2 nd electrode, wherein the 1 st electrode comprises an anode of the 1 st photovoltaic cell, the 2 nd electrode comprises a cathode of the 3 rd photovoltaic cell,

The anode of the 2 nd photovoltaic cell and the anode of the 3 rd photovoltaic cell are electrically connected with the 1 st electrode, and the cathode of the 1 st photovoltaic cell and the cathode of the 2 nd photovoltaic cell are electrically connected with the 2 nd electrode.

The stack of photovoltaic cells of the preceding claim, wherein the cathode of the 2 nd photovoltaic cell comprises a transparent conductive film and comprises the cathode of the 1 st photovoltaic cell.

The stack of photovoltaic cells of the preceding claim, wherein the anode of the 2 nd photovoltaic cell comprises a transparent conductive film and comprises the anode of the 3 rd photovoltaic cell.

Drawings

Fig. 1 (a) and 1 (b) are photovoltaic cells according to some embodiments of the utility model.

Fig. 2 (a) and 2 (b) are photovoltaic cells according to some embodiments of the utility model.

Fig. 3 is a photovoltaic cell stack according to some embodiments of the present utility model.

Fig. 4 is a pn junction structure according to some embodiments of the present utility model.

Fig. 5 is a pn junction structure according to some embodiments of the present utility model.

Fig. 6 is a pn junction structure according to some embodiments of the present utility model.

Fig. 7 (a), 7 (b), 7 (c) and 7 (d) are photovoltaic cells according to some embodiments of the utility model.

Fig. 7 (e) is a photovoltaic cell stack according to some embodiments of the present utility model.

Fig. 8 (a), 8 (b), 8 (c) and 8 (d) are photovoltaic cells according to some embodiments of the utility model.

Fig. 8 (e) is a photovoltaic cell stack according to some embodiments of the present utility model.

Fig. 9 (a), 9 (b), 9 (c) and 9 (d) are photovoltaic cells according to some embodiments of the utility model.

Fig. 9 (e) is a photovoltaic cell stack according to some embodiments of the present utility model.

Fig. 10 (a), 10 (b), 10 (c) and 10 (d) are photovoltaic cells according to some embodiments of the utility model.

Fig. 10 (e) is a photovoltaic cell stack according to some embodiments of the present utility model.

Detailed Description

To facilitate an understanding of the disclosure set forth herein, a number of terms are defined below.

All numbers expressing quantities, proportions, physical characteristics, and so forth, used in the specification and claims are to be understood as being modified in all instances by the term "about". Herein, the term "about" means an acceptable error for a particular value as determined by one of ordinary skill in the art, depending in part on how the value is measured or determined.

As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. Any and all examples and exemplary language (e.g., "such as") provided herein are intended merely to better illuminate the disclosure and do not pose a limitation on the scope of the disclosure, which should not be construed as implying any unnecessary method or condition on which the disclosure may be practiced.

The term "or" in relation to a list of two or more items encompasses all of the following explanations: any item in the list, all items in the list, and any combination of items in the list.

All ranges disclosed herein are to be understood to encompass any and all subranges subsumed therein. For example, the stated range of "1 to 10" should be taken to include any and all subranges between the minimum value 1 and the maximum value 10 and include the maximum value 1 and the maximum value 10; that is, all subranges beginning with a minimum value of 1 or more than 1 and ending with a maximum value of 10 or less than 10, such as: 1 to 6.7, 3.2 to 8.1 or 5.5 to 10, and any number within the stated range, for example: 2.6, 4.7 or 7.3.

The present utility model is described in further detail below with reference to the following detailed description. It should be noted that the following detailed description is merely for further illustrating the utility model and should not be construed as limiting the scope of the utility model, since numerous insubstantial modifications and adaptations of the utility model will be apparent to those skilled in the art based on the teachings herein and still fall within the scope of the utility model. Before discussing several non-limiting embodiments of the utility model, it is to be understood that the utility model is not limited in its application to the details of the particular non-limiting embodiments shown and discussed herein as the utility model may have other embodiments. Furthermore, the terminology used herein to discuss the utility model is for the purpose of description and not of limitation. Still further, unless otherwise indicated, the following discussion of like numbers refers to like elements.

In order to achieve the above objective, the present utility model provides a multi-junction tandem photovoltaic cell capable of generating electricity by double-sided absorption. Fig. 1 (a) shows a photovoltaic cell 100 according to an embodiment of the present utility model, comprising: a transparent conductive film 21 (1 st transparent conductive film); a transparent conductive film 22 (2 nd transparent conductive film); a pn junction 3 (1 st pn junction), a pn junction 5 (2 nd pn junction), and a pn junction 7 (3 rd pn junction) are arranged in this order from the transparent conductive film 21 to the transparent conductive film 22.

The pn junction 3 is located between the transparent conductive film 21 and the pn junction 5. The pn junction 3 is located between the transparent conductive film 21 and the pn junction 7. The pn junction 3 is located between the transparent conductive film 21 and the transparent conductive film 22.

The pn junction 5 is located between the transparent conductive film 21 and the pn junction 7. The pn-junction 5 is located between the pn-junction 3 and the pn-junction 7. The pn-junction 5 is located between the pn-junction 3 and the pn-junction 7. The pn junction 5 is located between the pn junction 3 and the transparent conductive film 22.

The pn junction 7 is located between the transparent conductive film 21 and the transparent conductive film 22. The pn junction 7 is located between the pn junction 3 and the transparent conductive film 22. The pn junction 7 is located between the pn junction 5 and the transparent conductive film 22.

The light absorbing material used for the pn junction 5 may be different from that used for the pn junction 3 or the pn junction 7, such as: the light absorbing material used for the pn junction 5 comprises a crystalline silicon material; the light absorbing material used for the pn junction 3 or the pn junction 7 contains a thin film compound material or a thin film organic material. The pn-junction 3 and the pn-junction 7 may be of the same type of thin film light absorbing material. The pn-junction 3 and the pn-junction 7 may be different types of thin film light absorbing materials.

The photovoltaic cell 100 may further include an electrode 91 and an electrode 92, wherein the transparent conductive film 21 is electrically connected to the electrode 91. The transparent conductive film 22 is electrically connected to the electrode 92. The transparent conductive film 21 is located between the photovoltaic cell 3 and the electrode 91. The transparent conductive film 21 is located between the photovoltaic cell 5 and the electrode 91. The transparent conductive film 21 is located between the photovoltaic cell 7 and the electrode 91. The transparent conductive film 22 is located between the photovoltaic cell 3 and the electrode 92. The transparent conductive film 22 is located between the photovoltaic cell 5 and the electrode 92. The transparent conductive film 22 is located between the photovoltaic cell 7 and the electrode 92.

In some embodiments, the electrodes 91 and 92 may be formed on the transparent conductive film 21 and the transparent conductive film 22, respectively, by screen printing, wet plating, and dry plating. Suitable electrodes 91 and 92 include, but are not limited to: silver, copper, gold, etc., or alloys thereof.

When sunlight enters the photovoltaic cell 100, the sunlight with a short wavelength is absorbed through the thin film photoelectric characteristics of the light absorbing materials of the pn junction 3 or the pn junction 7, and then the sunlight with a long wavelength enters the light absorbing materials of the pn junction 5, and each light absorbing material absorbs light to generate a photocurrent, and finally the current is led out through the transparent conductive film 21, the electrode 91, the transparent conductive film 22 and the electrode 92.

In some embodiments, the pn-junction 3 comprises a photosensitive conductive polymer, a polymer with Mn less than or equal to 1,000, an organometallic halide perovskite, CIGS, a perovskite oxide, amorphous silicon, a group II-VI compound (e.g., cadmium telluride (CdTe)) or a group III-V compound (e.g., gallium arsenide (GaAs), indium phosphide (InP), gallium indium phosphide (InGaP)).

The pn-junction 5 comprises monocrystalline silicon. The energy gap of the single crystal silicon light absorbing material is about 1.1eV, which is a non-direct energy gap, resulting in lower efficiency of the single crystal silicon light absorbing layer in converting light into electricity than the thin film light absorbing material in light absorption in the short wavelength band.

The pn junction 7 comprises a photosensitive conductive polymer, a polymer having Mn of 1,000 or less, an organometallic halide type perovskite, CIGS, a perovskite oxide, amorphous silicon, a group II-VI compound such as cadmium telluride (CdTe) or a group III-V compound such as gallium arsenide (GaAs), indium phosphide (InP), gallium indium phosphide (InGaP).

In some embodiments, the light entering the pn junction 5 can be controlled by the film thickness and the energy gap of the light absorbing material of the pn junction 3 and/or the pn junction 7, so as to improve the effective light absorption of the photovoltaic cell 100 to sunlight, and achieve the purpose of improving the photoelectric conversion efficiency.

In some embodiments, the transparent conductive film 21 has an energy gap Eg greater than 2.2eV ²¹ Such as, but not limited to: 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 34, 3.5, 3.6, 3.7, 3.8, 3.9, 4 or higher, suitable ranges may be any combination of the above values. The transparent conductive film 22 has an energy gap Eg greater than 2.2eV ²² Such as, but not limited to: 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, 4 or higher, and suitable ranges may be any combination of the above values.

The transparent conductive film 21 has an average light transmittance of greater than 85% in the visible wavelength range, such as, but not limited to: 85. 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98 or 99%, and suitable ranges may be any combination of the above. The transparent conductive film 22 has an average light transmittance of greater than 85%, such as, but not limited to: 85. 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98 or 99%, and suitable ranges may be any combination of the above.

As previously indicated, the pn junction 5 may be a heterojunction, and in order for the light-absorbing material of the pn junction 5 to absorb light on both sides, the transparent conductive film 21 and/or the transparent conductive film 22 of the photovoltaic cell 100 may employ a thin layer of transparent conductive oxide.

Suitable materials for transparent conductive film 21 and/or transparent conductive film 22 are, for example, but not limited to: indium Tin Oxide (ITO), indium doped zinc oxide (In: znO), aluminum doped zinc oxide (Al: znO), gallium doped zinc oxide (Ga: znO), boron doped zinc oxide (B: znO), hydrogen doped indium oxide (InO: H), fluorine doped indium oxide (F: in) ₂ O ₃ ) Or fluorine doped tin oxide (SnO) ₂ F) is carried out. Indium Tin Oxide (ITO) is preferred. Suitable materials for transparent conductive film 22 are, for example, but not limited to: indium Tin Oxide (ITO), indium doped zinc oxide (In: znO), aluminum doped zinc oxide (Al: znO), gallium doped zinc oxide (Ga: znO), boron doped zinc oxide (B: znO), hydrogen doped indium oxide (InO: H), fluorine doped indium oxide (F: in) ₂ O ₃ ) Or fluorine doped tin oxide (SnO) ₂ F) is carried out. Indium Tin Oxide (ITO) is preferred. The physical properties of each transparent conductive film material are shown in table one:

table one: physical properties of materials of the transparent conductive films

Among the materials, ITO, AZO, IGZO, IZO and other materials can be prepared by adopting a magnetron sputtering coating mode. SnO (SnO) ₂ :F(FTO)、In ₂ O: H (IOH), znO: B (BZO) and the like, all of which can form a suede structure on the film surface, are prepared by adopting a chemical vapor deposition mode.

In some embodiments, the energy gap of the light absorbing material of pn junction 3 and pn junction 7 of photovoltaic cell 100 is greater than the energy gap of the light absorbing material of pn junction 5, and the thickness of pn junction 3 and pn junction 7 is less than one thousandth of the thickness of monocrystalline silicon in the direction connecting transparent conductive film 21 and transparent conductive film 22, so that light in the long wavelength band is incident into pn junction 5.

In the direction of connecting the transparent conductive film 21 and the transparent conductive film 22, the thickness t of the transparent conductive film 21 ₂₁ The lower limit is 40nm and the upper limit is 80nm, such as but not limited to: 40. 45, 50, 55, 60, 65, 70, 75 or 80nm. Thickness t ₂₁ Ranges are any combination of the above values. Thickness t of transparent conductive film 22 ₂₂ The lower limit is 40nm and the upper limit is 80nm, such as but not limited to: 40. 45, 50, 55, 60, 65, 70, 75 or 80nm. Thickness t ₂₂ Ranges are any combination of the above values.

The pn junction 3 includes an energy gap Eg ³ (1 st energy gap). Energy gap Eg ³ Including the direct energy gap. Energy gap Eg ³ The lower limit of the value is 1eV and the upper limit is 4eV, such as but not limited to: 1. 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, or 4eV. Energy gap Eg ³ Ranges are any combination of the above values.

The pn junction 5 includes an energy gap Eg ⁵ (2 nd energy gap). Energy gap Eg ⁵ Including indirect energy gaps. Energy gap Eg ⁵ The lower limit of the value is 0.5eV and the upper limit is 1.5eV, such as but not limited to: 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4 or 1.5eV. Energy gap Eg ⁵ Ranges are any combination of the above values.

The pn junction 7 includes an energy gap Eg ⁷ (3 rd energy gap). Energy gap Eg ⁷ Comprising direct connectionEnergy gap. Energy gap Eg ⁷ The lower limit of the value is 1eV and the upper limit is 4eV, such as but not limited to: 1. 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, or 4eV. Energy gap Eg ⁷ Ranges are any combination of the above values.

Energy gap Eg ³ Energy gap Eg ⁵ And energy gap Eg ⁷ The design rules are as follows:

energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2.7eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2.6eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2.5eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2.4eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2.2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2.1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³

-1.9eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1.8eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1.7eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1.6eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1.5eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1.4eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1.2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.9eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.8eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.7eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.6eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.5eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.4eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ -0.1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ Energy gap Eg ⁵ Energy gap Eg less than or equal to ³ +0.1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ +0.2eV, energy gap Eg ⁵ Energy gap is less than or equal toEg ³ +0.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ³ +0.4eV or energy gap Eg ⁵ Energy gap Eg less than or equal to ³ +0.5eV。

Energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2.7eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2.6eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2.5eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2.4eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2.2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2.1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷

-1.9eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1.8eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1.7eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1.6eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1.5eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1.4eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1.2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.9eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.8eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.7eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.6eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.5eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.4eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ -0.1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ Energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ +0.1eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ +0.2eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ +0.3eV, energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ +0.4eV or energy gap Eg ⁵ Energy gap Eg less than or equal to ⁷ +0.5eV。

Energy gap Eg ⁵ And energy gap Eg ³ Size relation and energy gap Eg of (a) ⁵ And energy gap Eg ⁷ The size relationship of (a) may be established separately or the relationship may be the aboveAny combination.

The pn junction 3 has a thickness t of 50nm to 3,000nm in the direction of connecting the transparent conductive film 21 and the transparent conductive film 22 ₃ Such as, but not limited to: 50. 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, 1,000, 1,200, 1,400, 1,500, 1,600, 1,800, 2,000, 2,200, 2,400, 2,500, 2,600, 2,800 or 3,000nm, a suitable thickness t ₃ Ranges may be any combination of the above values, preferably thickness t ₃ Ranging from 100nm to 2,500nm. The pn-junction 5 has a thickness t of 50 μm to 300 μm ₅ Such as, but not limited to: 50. 60, 80, 100, 120, 140, 150, 160, 180, 200, 220, 240, 250, 260, 280 or 300 μm, preferably thickness t ₅ In the range of 100 μm to 200 μm. The pn junction 7 has a thickness t of 100nm to 3,000nm ₇ Such as, but not limited to: 50. 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, 1,000, 1,200, 1,400, 1,500, 1,600, 1,800, 2,000, 2,200, 2,400, 2,500, 2,600, 2,800 or 3,000nm, a suitable thickness t ₇ Ranges may be any combination of the above values, preferably thickness t ₇ Ranging from 100nm to 2,500nm.

In some preferred embodiments, the thickness t in the direction connecting the transparent conductive film 21 and the transparent conductive film 22 ₃ For thickness t ₅ The ratio of (2) is less than or equal to 5x10 ^-2 Such as, but not limited to: 10 ^-4 、1.5x10 ^-4 、2x10 ^-4 、2.5x10 ^-4 、3x10 ^-4 、3.5x10 ^-4 、4x10 ^-4 、4.5x10 ^-4 、5x10 ^-4 、5.5x10 ^-4 、6x10 ^-4 、6.5x10 ^-4 、7x10 ^-4 、7.5x10 ^-4 、8x10 ^-4 、8.5x10 ^-4 、9x10 ^-4 、9.5x10 ^-4 Or 10 ^-3 . Suitable ranges may be any combination of the above values.

In some preferred embodiments, the thickness t in the direction connecting the transparent conductive film 21 and the transparent conductive film 22 ₇ For thickness t ₅ The ratio of (2) is less than or equal to 5x10 ^-2 Such as, but not limited to: 10 ^-4 、1.5x10 ^-4 、2x10 ^-4 、2.5x10 ^-4 、3x10 ^-4 、3.5x10 ^-4 、4x10 ^-4 、4.5x10 ^-4 、5x10 ^-4 、5.5x10 ^-4 、6x10 ^-4 、6.5x10 ^-4 、7x10 ^-4 、7.5x10 ^-4 、8x10 ^-4 、8.5x10 ^-4 、9x10 ^-4 、9.5x10 ^-4 Or 10 ^-3 . Suitable ranges may be any combination of the above values.

In some preferred embodiments, the photovoltaic cell external quantum efficiency, photoelectric conversion efficiency, fill factor, open circuit Voltage (VOC), and short circuit current (JSC) are improved through the corresponding designs of the thickness and light absorption efficiency of the light absorbing materials of pn junction 3, pn junction 5, and pn junction 7. Specifically, the external quantum efficiency spectra of the absorption materials of the pn junction 3, the pn junction 5 and the pn junction 7 for solar absorption response are measured by using an analyzer (External Quantum Efficiency, EQE) for external quantum efficiency of solar cell, respectively, the pn junction 3 and the pn junction 7 mainly measure absorption response for the light wave section in the range of 380nm to 780nm of solar spectrum, and the pn junction 5 mainly measures absorption response for the light wave section in the range of 600nm to 1200nm of solar spectrum. Because the sunlight spectrum is mainly in the range of 380nm to 1200nm, the sunlight spectrum can be converted into electric energy after being absorbed by the light absorbing material which is currently used as a solar cell.

In some embodiments, when light is incident from the pn junction 3/pn junction 5 side, the light absorption efficiency of photovoltaic cell 100 is ≡85%, such as but not limited to: 85. 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 99.5, 99.9%. In some embodiments, when light is incident from the pn junction 7/pn junction 5 side, the light absorption efficiency of photovoltaic cell 100 is ≡85%, such as but not limited to: 85. 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 99.5, 99.9%.

In some preferred embodiments, the absorption response spectrum area A is measured by EQE measurement in the light wave region of the solar spectrum 380nm to 780nm for the pn junction 3 and the pn junction 7 ^EQE ₃₇ In the sun with respect to pn junction 5Absorption response spectrum area A obtained by EQE measurement of light wave section with spectrum ranging from 600nm to 1200nm ^EQE ₅ Wherein when A ^EQE ₃₇ /A ^EQE ₅ The amount of sunlight incident on the pn junction 5 can be improved when the following relation is satisfied, so that the optimal photoelectric conversion power generation efficiency is achieved:

0.8≤A ^EQE ₃₇ /A ^EQE ₅ less than or equal to 1.25, preferably: a is more than or equal to 0.85 ^EQE ₃₇ /A ^EQE ₅ Less than or equal to 1.18, more preferably: a is more than or equal to 0.9 ^EQE ₃₇ /A ^EQE ₅ Less than or equal to 1.11, most preferably: a is more than or equal to 0.95 ^EQE ₃₇ /A ^EQE ₅ ≤1.05。

In some preferred embodiments, the design rules for the thickness, energy gap, and light absorption efficiency of each layer of photovoltaic cell 100 are as follows:

In some preferred embodiments, the technical effects achievable by the aforementioned design rules are as follows:

the polarities of the pn-junction 3, the pn-junction 5, and the pn-junction 7 of the photovoltaic cell 100 are configured as follows: the pn-junction 3 is opposite to the pn-junction 5 in polarity. The polarity direction of the pn-junction 3 is the same as that of the pn-junction 7. The pn-junction 5 is opposite to the pn-junction 3 in polarity. The pn-junction 5 is opposite to the pn-junction 7 in polarity. The pn-junction 7 has the same polarity direction as the pn-junction 3. The pn-junction 7 is opposite to the polarity of the pn-junction 5.

The photovoltaic cell 110 shown in fig. 1 (b) is similar to the photovoltaic cell 100, except that: the pn-junction 3 comprises a p-type layer 31 and an n-type layer 33, the pn-junction 5 comprises a p-type layer 51 and an n-type layer 53, and the pn-junction 7 comprises a p-type layer 71 and an n-type layer 73. The p-type layer 31 has an energy gap Eg ³ . The n-type layer 33 has an energy gap Eg ³ . The p-type layer 51 has an energy gap Eg ⁵ . The n-type layer 53 has an energy gap Eg ⁵ . The p-type layer 71 has an energy gap Eg ⁷ . The n-type layer 73 has an energy gap Eg ⁷ 。

The n-type layer 33 is electrically connected to the transparent conductive film 21. The n-type layer 33 is electrically connected to the p-type layer 31. The n-type layer 33 is located between the transparent conductive film 21 and the p-type layer 31.

The p-type layer 31 is electrically connected to the n-type layer 33. The p-type layer 31 is electrically connected to the pn-junction 5. The p-type layer 31 is electrically connected to the p-type layer 51. The p-type layer 31 is located between the n-type layer 33 and the pn-junction 5. The p-type layer 31 is located between the n-type layer 33 and the p-type layer 51.

The p-type layer 51 is electrically connected to the pn-junction 3. The p-type layer 51 is electrically connected to the p-type layer 31. The p-type layer 51 is electrically connected to the n-type layer 53. The p-type layer 51 is located between the pn-junction 3 and the n-type layer 53. The p-type layer 51 is located between the p-type layer 31 and the n-type layer 53.

The n-type layer 53 is electrically connected to the p-type layer 51. The n-type layer 53 is electrically connected to the pn junction 7. n-type layer 53 is electrically connected to n-type layer 73. An n-type layer 53 is located between the p-type layer 51 and the pn-junction 7. n-type layer 53 is located between p-type layer 51 and n-type layer 73.

The n-type layer 73 is electrically connected to the pn junction 5. The n-type layer 73 is electrically connected to the n-type layer 53. The n-type layer 53 is electrically connected to the p-type layer 71. An n-type layer 73 is located between the pn-junction 5 and the p-type layer 71. n-type layer 73 is located between n-type layer 53 and p-type layer 71.

The p-type layer 71 is electrically connected to the n-type layer 73. The p-type layer 71 is electrically connected to the transparent conductive film 22. The p-type layer 71 is located between the n-type layer 73 and the transparent conductive film 22.

The photovoltaic cell 101 shown in fig. 2 (a) is similar to the photovoltaic cell 100, except that: the photovoltaic cell 101 includes a transparent conductive film 23 (3 rd transparent conductive film) and a transparent conductive film 24 (4 th transparent conductive film). The transparent conductive film 23 is located between the pn junction 3 and the pn junction 5. The transparent conductive film 23 is electrically connected to the pn junction 3. The transparent conductive film 23 is electrically connected to the pn junction 5. The material characteristics of the transparent conductive film 23 and the manufacturing method thereof, such as the transparent conductive film 21 or the transparent conductive film 22, are not described herein. The transparent conductive film 24 is located between the pn junction 5 and the pn junction 7. The transparent conductive film 24 is electrically connected to the pn junction 5. The transparent conductive film 24 is electrically connected to the pn junction 7. The material characteristics of the transparent conductive film 24 and the manufacturing method thereof, such as the transparent conductive film 21 or the transparent conductive film 22, are not described herein. The photovoltaic cell 101 includes a transparent conductive film 21, a pn junction 3, a transparent conductive film 23, a pn junction 5, a transparent conductive film 24, a pn junction 7, and a transparent conductive film 22, which are arranged in this order from the electrode 91 to the electrode 92.

The photovoltaic cell 111 shown in fig. 2 (b) is similar to the photovoltaic cell 101, except that: the pn-junction 3 comprises a p-type layer 31 and an n-type layer 33, the pn-junction 5 comprises a p-type layer 51 and an n-type layer 53, and the pn-junction 7 comprises a p-type layer 71 and an n-type layer 73. Thus, the transparent conductive film 23 is located between the p-type layer 31 and the p-type layer 51. The transparent conductive film 23 is electrically connected to the p-type layer 31. The transparent conductive film 23 is electrically connected to the p-type layer 51. Transparent conductive film 24 is located between n-type layer 53 and n-type layer 73. The transparent conductive film 24 is electrically connected to the n-type layer 53. The transparent conductive film 24 is electrically connected to the n-type layer 73. The photovoltaic cell 101 includes a transparent conductive film 21, an n-type layer 33, a p-type layer 31, a transparent conductive film 23, a p-type layer 51, an n-type layer 53, a transparent conductive film 24, an n-type layer 73, a p-type layer 71, and a transparent conductive film 22, which are arranged in this order from the electrode 91 to the electrode 92.

In some implementations, the pn-junction 3, the pn-junction 5, and the pn-junction 7 may be independent photovoltaic cells that can absorb solar light to generate electricity. Thus, as shown in fig. 3, the photovoltaic cell 110 may be a photovoltaic cell stack 200 comprising: electrode 91 (1 st electrode); electrode 92 (electrode 2); and a photovoltaic cell 30 (1 st photovoltaic cell), a photovoltaic cell 50 (2 nd photovoltaic cell), and a photovoltaic cell 70 (3 rd photovoltaic cell) arranged in this order from the electrode 91 to the electrode 92. In the photovoltaic cell stack 200, the photovoltaic cell 50 is used as a substrate, and then the photovoltaic cell 30 and the photovoltaic cell 70 are respectively manufactured on the upper surface and the lower surface, so that the overall cell structure is as follows: photovoltaic cell 30/photovoltaic cell 50/photovoltaic cell 70.

The photovoltaic cell 30 and/or the photovoltaic cell 70 can regulate the light entering the photovoltaic cell 50 through the thickness and the energy gap of the light absorbing material, so as to promote the effective light absorption of the photovoltaic cell stack 200 to sunlight, thereby improving the photoelectric conversion efficiency of the photovoltaic cell stack 200.

In some embodiments, photovoltaic cell 30 comprises a crystalline photovoltaic cell, such as, but not limited to: a monocrystalline silicon photovoltaic cell. Photovoltaic cell 30 and/or photovoltaic cell 70 comprises a thin film photovoltaic cell, such as, but not limited to, a thin film photovoltaic cell comprising: copper Indium Gallium Selenide (CIGS), polymers with Mn less than or equal to 1,000, organometallic halide perovskite, amorphous silicon (a-Si), cadmium telluride (CdTe), group iii-v compounds such as gallium arsenide (GaAs), indium phosphide (InP), gallium indium phosphide (InGaP).

The photovoltaic cell 30 comprises a pn junction 3. Photovoltaic cell 30 is located between electrode 91 and photovoltaic cell 50. Photovoltaic cell 30 is located between electrode 91 and photovoltaic cell 70. Photovoltaic cell 30 is located between electrode 91 and electrode 92. The photovoltaic cell 30 is electrically connected to the electrode 91. Photovoltaic cell 30 is electrically connected to photovoltaic cell 50. The photovoltaic cell 30 is electrically connected to the photovoltaic cell 50 by an electrode 93. The electrode 91 comprises the anode of the photovoltaic cell 30. The electrode 93 comprises the cathode of the photovoltaic cell 30. The material characteristics of the electrode 93 and the manner of manufacturing the same, such as the electrode 91 or the electrode 92, are not described herein.

The photovoltaic cell 50 comprises a pn junction 5. Photovoltaic cell 50 is located between electrode 91 and photovoltaic cell 70. Photovoltaic cell 50 is located between photovoltaic cell 30 and photovoltaic cell 70. Photovoltaic cell 50 is located between electrode 91 and electrode 92. The photovoltaic cell 50 is located between the photovoltaic cell 30 and the electrode 92. Photovoltaic cell 50 is electrically connected to photovoltaic cell 30. The photovoltaic cell 50 is electrically connected to the photovoltaic cell 30 by an electrode 93. Photovoltaic cell 50 is electrically connected to photovoltaic cell 70. Photovoltaic cell 50 is electrically connected to photovoltaic cell 70 by electrode 94. The electrode 94 comprises the cathode of the photovoltaic cell 50. The electrode 94 comprises the anode of the photovoltaic cell 50. The material characteristics of the electrode 94 and the manner of manufacturing the same, such as the electrode 91 or the electrode 92, are not described herein.

Photovoltaic cell 70 includes a pn junction 7. Photovoltaic cell 70 is positioned between electrode 91 and electrode 92. Photovoltaic cell 70 is positioned between photovoltaic cell 30 and electrode 92. Photovoltaic cell 70 is positioned between photovoltaic cell 50 and electrode 92. Photovoltaic cell 70 is electrically connected to electrode 92. Photovoltaic cell 70 is electrically connected to photovoltaic cell 50. Photovoltaic cell 70 is electrically connected to photovoltaic cell 50 by electrode 94. The electrode 94 comprises the anode of the photovoltaic cell 70. Electrode 92 comprises the cathode of photovoltaic cell 70.

The electrode 91 is electrically connected to the electrode 94. The electrode 91 is electrically connected to the anode of the photovoltaic cell 30. The electrode 91 is electrically connected to the anode of the photovoltaic cell 50. The electrode 91 is electrically connected to the anode of the photovoltaic cell 70. Electrode 92 is electrically connected to electrode 93. The electrode 92 is electrically connected to the cathode of the photovoltaic cell 30. The electrode 92 is electrically connected to the cathode of the photovoltaic cell 50. Electrode 92 is electrically connected to the cathode of photovoltaic cell 70.

In some embodiments, a pn junction 5 is used as a plated substrate for the pn junction 3 or the pn junction 7; after the transparent conductive film 23 is plated on the pn junction 5, the thin layers required on the stack can be designed according to the layer structure of the pn junction 3 by magnetron sputtering coating or thermal evaporation coating and other modes one by one; after the transparent conductive film 24 is plated on the pn junction 5, the thin layers required on the stack can be designed according to the layer structure of the pn junction 7 by magnetron sputtering coating or thermal evaporation coating.

In some embodiments, photovoltaic cell 50 is used as a coated substrate for photovoltaic cell 30 or photovoltaic cell 70; after the electrode 93 is plated on the photovoltaic cell 50, the thin layers required on the stack can be designed according to the layer structure of the photovoltaic cell 30 by magnetron sputtering coating or thermal evaporation coating; after the electrode 94 is plated, the photovoltaic cells 50 can be stacked with the required thin layers according to the layer structure of the photovoltaic cells 70, such as magnetron sputtering coating or thermal evaporation coating.

In some embodiments, the pn junction 3 comprises CIGS. In some embodiments, photovoltaic cell 30 is a CIGS-containing photovoltaic cell. In some embodiments, the pn junction 7 comprises CIGS. In some embodiments, photovoltaic cell 70 is a CIGS-containing photovoltaic cell.

A specific embodiment may be a structure 400 as shown in fig. 4. The p-type layer 31 comprises a p-type CIGS layer 41. The p-type layer 71 comprises a p-type CIGS layer 41. The p-type CIGS layer 41 preferably serves as a light absorbing layer. Thickness t of p-type CIGS layer 41 if pn junction 3 (photovoltaic cell 30) and/or pn junction 7 (photovoltaic cell 70) has the ability to be light transmissive ₄₁ 50 to 500nm. The n-type layer 33 includes an n-type CIGS layer 43. The n-type layer 73 comprises an n-type CIGS layer 43. The n-type CIGS layer 43 preferably serves as a light absorbing layer. Thickness t of n-type CIGS layer 43 ₄₃ From 5 to 20nm.

The pn junction 3 may optionally include transparent conductive films 21, 24 and transparent conductive films 22, 23, and the transparent conductive films 21, 24 are electrically connected to the n-type CIGS layer 43. The transparent conductive films 22, 23 are electrically connected to the p-type CIGS layer 41.

In some preferred embodiments, a p-type carrier transport layer 42 is included between the p-type CIGS layer 41 and the transparent conductive films 22, 23. The p-type carrier transport layer 42 and the p-type CIGS layer are electrically connected to the transparent conductive films 22, 23. Thickness t of p-type carrier transport layer 42 ₄₂ 10 to 30nm. An n-type carrier transport layer 44 is included between the n-type CIGS layer 43 and the transparent conductive films 21, 24. The n-type carrier transport layer 44 is electrically connected to the transparent conductive films 21, 24. Thickness t of n-type carrier transport layer 44 ₄₂ From 5 to 20nm.

Accordingly, the transparent conductive films 21, 24 to the transparent conductive films 22, 23 are arranged in order: an n-type carrier transport layer 44, an n-type CIGS layer 43, a p-type CIGS layer 41, and a p-type carrier transport layer 42.

In some embodiments, the structure of the p-type carrier transport layer 42 comprises a p-type amorphous silicon film/sodium fluoride (p-type a-Si: H/NaF). In some embodiments, the structure of n-type carrier transport layer 44 comprises In ₂ S ₃ ZnO or ZnMgO/ZnO.

In some implementations, the pn-junction 3 includes an organic material. In some embodiments, the photovoltaic cell 30 is a photovoltaic cell comprising an organic material. In some implementations, the pn junction 7 includes an organic material. In some embodiments, photovoltaic cell 70 is a photovoltaic cell comprising an organic material.

A specific embodiment may be a structure 600 as shown in fig. 5. The p-type layer 31 includes a p-type carrier transporting organic material layer 61. The p-type layer 71 comprises a p-type carrier transporting organic material layer 61. Thickness t of p-type carrier transporting organic material layer 61 ₆₁ 10 to 30nm. The n-type layer 33 includes an n-type carrier transporting organic material layer 63. The n-type layer 73 includes an n-type carrier transporting organic material layer 63. Thickness t of n-type carrier transporting organic material layer 63 ₆₃ From 5 to 20nm.

In some embodiments, the p-type carrier transporting organic material layer 61 comprises an organic conductive thin film. The p-type carrier transporting organic material layer 61 contains a material having the ability to transport holes and block electrons. The n-type carrier transporting organic material layer 63 includes an organic conductive thin film. The n-type carrier transporting organic material layer 63 contains a material having an ability to transport electrons and block holes.

The pn-junction 3 may optionally comprise a layer 62 of an organic light absorbing material. The organic light absorbing material layer 62 is electrically connected to the n-type carrier transporting organic material layer 63. The organic light absorbing material layer 62 is electrically connected to the p-type carrier transporting organic material layer 61. Considering the light-penetrability of the pn junction 3, the thickness t of the organic light-absorbing material layer 62 ₆₂ 50 to 300nm. In some embodiments, the organic light absorbing material layer 62 comprises a polymer or perovskite having Mn less than or equal to 1,000.

Accordingly, the transparent conductive films 21, 24 to the transparent conductive films 22, 23 are arranged in order: an n-type carrier transporting organic material layer 63, an organic light absorbing material layer 62, and a p-type carrier transporting organic material layer 61.

The CIGS and organic film light-absorbing materials are prepared by blending the materials, so that the energy gap of the film light-absorbing layer (such as CIGS energy gap: 1.01-1.68 eV and organic film: 1.0-3.3 eV) is directly adjusted, and then the material is plated with the light-absorbing material layer by a continuous film plating mode, so as to complete the photovoltaic cell or photovoltaic cell stack of the utility model.

In some preferred embodiments, the CIGS energy gap is controlled at: a range of 1.2 to 1.68 eV; the energy gap of the organic film is controlled as follows: a range of 1.2 to 3.3 eV.

In some preferred embodiments, the photovoltaic cells of this utility model can be of the structure: thin film pn junction 3/crystalline pn junction 5/thin film pn junction 7. The crystalline pn-junction 5 comprises a heterojunction type pn-junction. The thin film pn junction 3 or the pn junction 7 includes a CIGS thin film type pn junction or an organic thin film type pn junction (e.g., a polymer or a polymer perovskite material having mn.ltoreq.1,000).

In some preferred embodiments, the photovoltaic cell stack of the present utility model may be of the structure: thin film photovoltaic cell 30/crystalline photovoltaic cell 50/thin film photovoltaic cell 70. The crystalline photovoltaic cell 50 comprises a heterojunction photovoltaic cell. The thin film photovoltaic cell 30 or photovoltaic cell 70 comprises a CIGS thin film photovoltaic cell or an organic thin film photovoltaic cell (e.g., a polymer or polymer perovskite material having Mn < 1,000).

In the preparation mode of the photovoltaic cell, all film layers adopt a dry film plating mode, such as: CIGS is coated by vacuum magnetron sputtering, polymers and perovskite with Mn less than or equal to 1,000 are vacuum thermal evaporation, and transparent conductive films can be coated by vacuum magnetron sputtering or chemical vapor deposition.

In some embodiments, the pn-junction 5 comprises silicon, preferably amorphous silicon or monocrystalline silicon. In some embodiments, photovoltaic cell 50 is a photovoltaic cell comprising silicon, preferably a photovoltaic cell comprising amorphous silicon, preferably a photovoltaic cell comprising monocrystalline silicon. More preferably a photovoltaic cell comprising heterojunction monocrystalline silicon.

A specific embodiment may be a structure 800 as shown in fig. 6. The p-type layer 51 includes a p-type amorphous silicon layer 81. Thickness t of p-type amorphous silicon layer 81 ₈₁ From 5 to 20nm. The n-type layer 53 includes an n-type amorphous silicon layer 83. Thickness t of n-type amorphous silicon layer 83 ₈₈ From 5 to 20nm.

In some preferred implementations, one or more intrinsic silicon layers 85, 86, preferably intrinsic amorphous silicon layers, are included between the p-type amorphous silicon layer 81 and the n-type amorphous silicon layer 83. Thickness t of intrinsic silicon layer 85 ₈₅ From 5 to 10nm. Thickness t of intrinsic silicon layer 86 ₈₆ From 5 to 10nm. A monocrystalline silicon layer 84, preferably n-type monocrystalline silicon, is included between the p-type amorphous silicon layer 81 and the n-type amorphous silicon layer 83A layer or p-type monocrystalline silicon layer, more preferably an n-type monocrystalline silicon layer. Thickness t of monocrystalline silicon layer 84 ₈₄ 100 to 300 μm. Thickness t of intrinsic silicon layer 86 ₈₆ From 5 to 10nm.

The intrinsic silicon layer 85 is electrically connected to the p-type amorphous silicon layer 81. The intrinsic silicon layer 85 is electrically connected to the single crystal silicon layer 84. The intrinsic silicon layer 86 is electrically connected to the n-type amorphous silicon layer 83. The intrinsic silicon layer 86 is electrically connected to the single crystal silicon layer 84. Therefore, the p-type amorphous silicon layer 81 to the n-type amorphous silicon layer 83 are sequentially arranged: a p-type amorphous silicon layer 81, an intrinsic silicon layer 85, a single crystal silicon layer 84, an intrinsic silicon layer 86, and an n-type amorphous silicon layer 83.

The pn junction 5 may optionally include a transparent conductive film 23 and a transparent conductive film 24, and the transparent conductive film 23 is electrically connected to the p-type amorphous silicon layer 81. The transparent conductive film 24 and the n-type amorphous silicon layer 83. Accordingly, the transparent conductive film 23 to the transparent conductive film 24 are sequentially arranged: a p-type amorphous silicon layer 81, an intrinsic silicon layer 85, a single crystal silicon layer 84, an intrinsic silicon layer 86, and an n-type amorphous silicon layer 83.

In some embodiments, photovoltaic cell 100 is preferably photovoltaic cell 120 as shown in fig. 7 (a), photovoltaic cell 120 having structure 400 as pn junction 3, structure 800 as pn junction 5, and structure 400 'as pn junction 5, the configuration of the elements of structure 400' being as described above for structure 400. Specifically, photovoltaic cell 120 includes structure 400, structure 800, and structure 400' arranged in order from electrode 91 to electrode 92.

In some preferred embodiments, photovoltaic cell 120 is preferably photovoltaic cell 121 as shown in fig. 7 (b), which comprises transparent conductive film 21, n-type CIGS layer 43, p-type CIGS layer 41, p-type amorphous silicon layer 81, n-type amorphous silicon layer 83, n-type CIGS layer 43', p-type CIGS layer 41', and transparent conductive film 22, arranged in that order from electrode 91 to electrode 92.

Optionally, a transparent conductive film 23 may be disposed between the p-type CIGS layer 41 and the p-type amorphous silicon layer 81. A transparent conductive film 24 may be disposed between the n-type CIGS layer 43' and the n-type amorphous silicon layer 83. Thus, the photovoltaic cell 120 is a photovoltaic cell 122 as shown in fig. 7 (c), which includes the transparent conductive film 21, the n-type CIGS layer 43, the p-type CIGS layer 41, the transparent conductive film 23, the p-type amorphous silicon layer 81, the n-type amorphous silicon layer 83, the transparent conductive film 24, the n-type CIGS layer 43', the p-type CIGS layer 41', and the transparent conductive film 22, which are arranged in this order from the electrode 91 to the electrode 92.

In some preferred embodiments, photovoltaic cell 120 is a photovoltaic cell 123 as shown in fig. 7 (d) comprising transparent conductive film 21, n-type carrier transport layer 44, n-type CIGS layer 43, p-type CIGS layer 41, p-type carrier transport layer 42, transparent conductive film 23, p-type amorphous silicon layer 81, intrinsic silicon layer 85, monocrystalline silicon layer 84, intrinsic silicon layer 86, n-type amorphous silicon layer 83, transparent conductive film 24, n-type carrier transport layer 44', n-type CIGS layer 43', p-type CIGS layer 41', p-type carrier transport layer 42', and transparent conductive film 22, arranged in that order from electrode 91 to electrode 92.

In some embodiments, photovoltaic cell stack 200 is preferably photovoltaic cell stack 220 as shown in fig. 7 (e), photovoltaic cell stack 220 having structure 400 as photovoltaic cell 30, structure 800 as photovoltaic cell 50, and structure 400 'as photovoltaic cell 70, the configuration of the elements of structure 400' being as described above for structure 400. Specifically, photovoltaic cell stack 220 includes structure 400, electrode 93, structure 800, electrode 94, and structure 400' arranged in that order from electrode 91 to electrode 92.

In some embodiments, photovoltaic cell 100 is preferably photovoltaic cell 130 as shown in fig. 8 (a), photovoltaic cell 130 having structure 400 as pn junction 3, structure 800 as pn junction 5, and structure 600 as pn junction 5. Specifically, photovoltaic cell 120 includes structure 400, structure 800, and structure 600, arranged in sequence from electrode 91 to electrode 92.

In some preferred embodiments, photovoltaic cell 120 is preferably photovoltaic cell 131 as shown in fig. 8 (b), which comprises transparent conductive film 21, n-type CIGS layer 43, p-type CIGS layer 41, p-type amorphous silicon layer 81, n-type amorphous silicon layer 83, n-type carrier transporting organic material layer 63, p-type carrier transporting organic material layer 61, and transparent conductive film 22, arranged in that order from electrode 91 to electrode 92.

Optionally, a transparent conductive film 23 may be disposed between the p-type CIGS layer 41 and the p-type amorphous silicon layer 81. A transparent conductive film 24 may be disposed between the n-type carrier transporting organic material layer 63 and the n-type amorphous silicon layer 83. Thus, the photovoltaic cell 120 is a photovoltaic cell 132 as shown in fig. 8 (c), which includes the transparent conductive film 21, the n-type CIGS layer 43, the p-type CIGS layer 41, the transparent conductive film 23, the p-type amorphous silicon layer 81, the n-type amorphous silicon layer 83, the transparent conductive film 24, the n-type carrier transporting organic material layer 63, the p-type carrier transporting organic material layer 61, and the transparent conductive film 22, which are arranged in this order from the electrode 91 to the electrode 92.

In some preferred embodiments, photovoltaic cell 120 is a photovoltaic cell 133 as shown in fig. 8 (d) that includes transparent conductive film 21, n-type carrier transport layer 44, n-type CIGS layer 43, p-type CIGS layer 41, p-type carrier transport layer 42, transparent conductive film 23, p-type amorphous silicon layer 81, intrinsic silicon layer 85, monocrystalline silicon layer 84, intrinsic silicon layer 86, n-type amorphous silicon layer 83, transparent conductive film 24, n-type carrier transport organic material layer 63, organic light absorbing material layer 62, p-type carrier transport organic material layer 61, and transparent conductive film 22, arranged in that order from electrode 91 to electrode 92.

In some embodiments, the photovoltaic cell stack 200 is preferably a photovoltaic cell stack 230 as shown in fig. 8 (e), the photovoltaic cell stack 230 being with the structure 400 as photovoltaic cell 30, the structure 800 as photovoltaic cell 50, and the structure 600 as photovoltaic cell 70. Specifically, photovoltaic cell stack 230 includes structure 400, electrode 93, structure 800, electrode 94, and structure 600, arranged in that order from electrode 91 to electrode 92.

In some embodiments, photovoltaic cell 100 is preferably photovoltaic cell 140 as shown in fig. 9 (a), photovoltaic cell 140 having structure 600 as pn junction 3, structure 800 as pn junction 5, and structure 400 as pn junction 5. Specifically, photovoltaic cell 140 includes structure 600, structure 800, and structure 400, arranged in sequence from electrode 91 to electrode 92.

In some preferred embodiments, photovoltaic cell 140 is preferably photovoltaic cell 141 as shown in fig. 9 (b), which comprises transparent conductive film 21, n-type carrier transporting organic material layer 63, p-type carrier transporting organic material layer 61, p-type amorphous silicon layer 81, n-type amorphous silicon layer 83, n-type CIGS layer 43, p-type CIGS layer 41, and transparent conductive film 22, arranged in that order from electrode 91 to electrode 92.

Optionally, a transparent conductive film 23 may be disposed between the p-type carrier transporting organic material layer 61 and the p-type amorphous silicon layer 81. A transparent conductive film 24 may be disposed between the n-type CIGS layer 43 and the n-type amorphous silicon layer 83. Accordingly, the photovoltaic cell 120 is a photovoltaic cell 142 as shown in fig. 9 (c), which includes a transparent conductive film 21, an n-type carrier transporting organic material layer 63, a p-type carrier transporting organic material layer 61, a transparent conductive film 23, a p-type amorphous silicon layer 81, an n-type amorphous silicon layer 83, a transparent conductive film 24, an n-type CIGS layer 43, a p-type CIGS layer 41, and a transparent conductive film 22, which are arranged in this order from the electrode 91 to the electrode 92.

In some preferred embodiments, photovoltaic cell 120 is a photovoltaic cell 143 as shown in fig. 9 (d) that includes transparent conductive film 21, n-type carrier transporting organic material layer 63, organic light absorbing material layer 62, p-type carrier transporting organic material layer 61, transparent conductive film 23, p-type amorphous silicon layer 81, intrinsic silicon layer 85, monocrystalline silicon layer 84, intrinsic silicon layer 86, n-type amorphous silicon layer 83, transparent conductive film 24, n-type carrier transporting layer 44, n-type CIGS layer 43, p-type CIGS layer 41, p-type carrier transporting layer 42, and transparent conductive film 22, arranged in that order from electrode 91 to electrode 92.

In some embodiments, the photovoltaic cell stack 200 is preferably a photovoltaic cell stack 240 as shown in fig. 9 (e), the photovoltaic cell stack 240 having the structure 600 as photovoltaic cell 30, the structure 800 as photovoltaic cell 50, and the structure 400 as photovoltaic cell 70. Specifically, photovoltaic cell stack 240 includes structure 600, electrode 93, structure 800, electrode 94, and structure 400, arranged in that order from electrode 91 to electrode 92.

In some embodiments, photovoltaic cell 100 is preferably photovoltaic cell 150 as shown in fig. 10 (a), photovoltaic cell 150 having structure 600 as pn junction 3, structure 800 as pn junction 5, and structure 600 'as pn junction 5, the configuration of the elements of structure 600' being as described above for structure 600. Specifically, photovoltaic cell 150 includes structure 600, structure 800, and structure 600' arranged in order from electrode 91 to electrode 92.

In some preferred embodiments, the photovoltaic cell 150 is preferably a photovoltaic cell 151 as shown in fig. 10 (b) that includes a transparent conductive film 21, an n-type carrier transporting organic material layer 63, a p-type carrier transporting organic material layer 61, a p-type amorphous silicon layer 81, an n-type amorphous silicon layer 83, an n-type carrier transporting organic material layer 63', a p-type carrier transporting organic material layer 61', and a transparent conductive film 22, which are sequentially arranged from an electrode 91 to an electrode 92.

Optionally, a transparent conductive film 23 may be disposed between the p-type carrier transporting organic material layer 61 and the p-type amorphous silicon layer 81. A transparent conductive film 24 may be disposed between the n-type carrier transporting organic material layer 63' and the n-type amorphous silicon layer 83. Thus, the photovoltaic cell 150 is a photovoltaic cell 152 as shown in fig. 10 (c), which includes the transparent conductive film 21, the n-type carrier transporting organic material layer 63, the p-type carrier transporting organic material layer 61, the transparent conductive film 23, the p-type amorphous silicon layer 81, the n-type amorphous silicon layer 83, the transparent conductive film 24, the n-type carrier transporting organic material layer 63', the p-type carrier transporting organic material layer 61', and the transparent conductive film 22, which are arranged in this order from the electrode 91 to the electrode 92.

In some preferred embodiments, the photovoltaic cell 150 is a photovoltaic cell 153 as shown in fig. 10 (d) that includes a transparent conductive film 21, an n-type carrier transporting organic material layer 63, an organic light absorbing material layer 62, a p-type carrier transporting organic material layer 61, a transparent conductive film 23, a p-type amorphous silicon layer 81, an intrinsic silicon layer 85, a single crystal silicon layer 84, an intrinsic silicon layer 86, an n-type amorphous silicon layer 83, a transparent conductive film 24, an n-type carrier transporting organic material layer 63', an organic light absorbing material layer 62', a p-type carrier transporting organic material layer 61', and a transparent conductive film 22, which are sequentially arranged from an electrode 91 to an electrode 92.

In some embodiments, the photovoltaic cell stack 200 is preferably a photovoltaic cell stack 250 as shown in fig. 10 (e), the photovoltaic cell stack 250 having the structure 600 as photovoltaic cell 30, the structure 800 as photovoltaic cell 50, and the structure 600 'as photovoltaic cell 70, the configuration of the elements of the structure 600' being as described above for the structure 600. Specifically, photovoltaic cell stack 250 includes structure 600, electrode 93, structure 800, electrode 94, and structure 600' arranged in that order from electrode 91 to electrode 92.

It will be apparent to those skilled in the art that various modifications and variations can be made to the present utility model without departing from the scope or spirit of the utility model. In view of the foregoing, it is intended that the present utility model cover modifications and variations of this utility model provided they come within the scope of the following claims and their equivalents.

Claims

1. A photovoltaic cell, comprising:

a 1 st transparent conductive film;

a 2 nd transparent conductive film;

Satisfaction of the 1 st energy gap, the 2 nd energy gap and the 3 rd energy gap

2. The photovoltaic cell of claim 1, wherein an energy gap of the 1 st transparent conductive film or the 2 nd transparent conductive film is greater than 2.2eV.

3. The photovoltaic cell of claim 1, wherein the 1 st transparent conductive film or the 2 nd transparent conductive film has an average light transmittance of greater than 85% over the visible wavelength range.

4. The photovoltaic cell of claim 1, wherein the 1 st transparent conductive film comprises indium tin oxide.

5. The photovoltaic cell of claim 1, wherein the 2 nd transparent conductive film comprises indium tin oxide.

6. The photovoltaic cell of any one of claims 1 to 5, wherein the 2 nd energy gap comprises an indirect energy gap.

7. The photovoltaic cell of any one of claims 1 to 5, wherein the 1 st energy gap comprises a direct energy gap.

8. The photovoltaic cell of any one of claims 1 to 5, wherein the 3 rd energy gap comprises a direct energy gap.

9. The photovoltaic cell of any one of claims 1 to 5, wherein the 2 nd energy gap ranges from 0.5 to 1.5eV.

10. The photovoltaic cell of any one of claims 1 to 5, wherein the 1 st energy gap ranges from 1 to 4eV.

11. The photovoltaic cell of any one of claims 1 to 5, wherein the 3 rd energy gap ranges from 1 to 4eV.

12. The photovoltaic cell of any one of claims 1 to 5, wherein a thickness ratio of the 1 st pn junction to the 2 nd pn junction in a direction connecting the 1 st transparent conductive film and the 2 nd transparent conductive film is less than or equal to 5x10 ^-2 。

13. The photovoltaic cell of any one of claims 1 to 5, wherein a thickness ratio of the 3 rd pn junction to the 2 nd pn junction in a direction connecting the 1 st transparent conductive film and the 2 nd transparent conductive film is less than or equal to 5x10 ^-2 。

14. A photovoltaic cell, comprising:

a 1 st transparent conductive film;

a 2 nd transparent conductive film;

15. The photovoltaic cell of claim 14, wherein an energy gap of the 1 st transparent conductive film or the 2 nd transparent conductive film is greater than 2.2eV.

16. The photovoltaic cell of claim 14, wherein the 1 st transparent conductive film or the 2 nd transparent conductive film has an average light transmittance of greater than 85% over the visible wavelength range.

17. The photovoltaic cell of claim 14, wherein the 1 st transparent conductive film comprises indium tin oxide.

18. The photovoltaic cell of claim 14, wherein the 2 nd transparent conductive film comprises indium tin oxide.

19. The photovoltaic cell of any one of claims 14 to 18, wherein the 2 nd pn junction comprises polycrystalline silicon or monocrystalline silicon.

20. The photovoltaic cell of any one of claims 14 to 18, wherein the 1 st pn junction comprises amorphous silicon.

21. The photovoltaic cell of any one of claims 14 to 18, wherein the 3 rd pn junction comprises amorphous silicon.

22. The photovoltaic cell of any one of claims 14 to 18, further comprising a 3 rd transparent conductive film located between the 1 st pn junction and the 2 nd pn junction.

23. The photovoltaic cell of any one of claims 14 to 18, further comprising a 4 th transparent conductive film located between the 2 nd pn junction and the 3 rd pn junction.

24. The photovoltaic cell of claim 22, wherein the 3 rd transparent conductive film is electrically connected to the 2 nd transparent conductive film.

25. The photovoltaic cell of claim 23, wherein the 4 th transparent conductive film is electrically connected to the 1 st transparent conductive film.