CN114551729A - Preparation method of silicon-based heterojunction perovskite laminated solar cell - Google Patents
Preparation method of silicon-based heterojunction perovskite laminated solar cell Download PDFInfo
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- 238000005516 engineering process Methods 0.000 claims description 19
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- -1 Spiro-TTB Chemical compound 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052737 gold Inorganic materials 0.000 claims description 2
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- 150000002367 halogens Chemical group 0.000 claims description 2
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
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- 239000011630 iodine Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
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Abstract
The invention discloses a preparation method of a silicon-based heterojunction perovskite laminated solar cell, which comprises the following steps: providing a silicon-based heterojunction bottom battery, and preparing a middle connecting layer on the front side of the bottom battery; manufacturing a hole transport layer on the front side of the battery; manufacturing a perovskite absorption layer on the surface of the hole transport layer; manufacturing an electron transmission layer on the surface of the perovskite absorption layer; manufacturing a transparent conductive film layer on the surface of the electron transmission layer; and manufacturing metal grid line electrodes on the surface of the transparent conductive film and the back of the battery. According to the invention, by utilizing the characteristic that the band gap of the perovskite material is continuously adjustable, the top layer perovskite absorption layer is designed into a multilayer structure with gradually increased optical band gap, compared with the perovskite absorption layer with fixed optical band gap, the multilayer perovskite structure battery with gradually increased optical band gap can more effectively utilize solar spectrum and obtain higher open-circuit voltage and short-circuit current, so that the conversion efficiency of the laminated battery can be greatly improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a silicon-based heterojunction perovskite laminated solar cell.
Background
In recent years, a photovoltaic material system which develops rapidly is a perovskite material, and the perovskite has the advantages of cheap material system, simple manufacturing process, low heat treatment temperature, continuous and adjustable band gap of an absorption layer and suitability for a top layer battery of a laminated battery. The existing silicon unijunction photovoltaic technology reaches the limit, is difficult to cross the large threshold of 28% conversion efficiency, and only utilizes a double-stack or even a three-stack structure to further break through. The optimal dual stack cell would utilize a 1.70eV upper cell and 0.97eV lower cell arrangement, with a theoretical limit of 42.5% power generation efficiency. The most promising laminated structure at present is a bottom layer silicon heterojunction battery (HJT, HDT, HIT, SHJ), and the selection of an upper layer battery is relatively matched with a perovskite system with continuously adjustable optical energy band, which is the mainstream of the industrialization of the laminated battery at present.
To improve the efficiency of solar cells, the solar spectrum must be fully utilized. In the stacked structure, the top cell with the higher optical bandgap acts as an absorber layer to absorb the solar spectrum with photon energies above its bandgap. The bottom cell absorbs light that passes through the top cell. The difficulty in designing the stack is how to choose the optical bandgap of the top cell absorber layer to have the maximum open circuit voltage and short circuit current in the case where the absorption bandgap of the bottom cell material is fixed (e.g. silicon).
As shown in fig. 1, fig. 2 and fig. 3, so far, when the perovskite absorption layer of the top cell is prepared by using the silicon/perovskite double-laminated layer, the perovskite material with a single-layer structure is used, the band gap Eg of the whole perovskite absorption layer is fixed, and the highest conversion efficiency of the silicon/perovskite double-laminated cell is reported to be 29.15%, which is far less than the theoretical limit value of 42.5%. One reason for this is that the perovskite absorption layer has a single-layer structure and a fixed band gap, and the advantage of the adjustable band gap of the perovskite material is not effectively utilized.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a silicon-based heterojunction perovskite laminated solar cell, which can obtain higher open-circuit voltage and is beneficial to improving short-circuit current by designing a top layer perovskite absorption layer into a multilayer structure with an optical energy band gap gradually increased, so that the conversion efficiency of the laminated solar cell can be greatly improved.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a preparation method of a silicon-based heterojunction perovskite tandem solar cell comprises the following steps:
providing a silicon-based heterojunction bottom battery, and preparing and completing an intermediate connection layer on the front side of the bottom battery;
manufacturing a hole/electron transport layer on the front surface of the battery;
manufacturing a perovskite absorption layer on the surface of the hole/electron transport layer;
manufacturing an electron/hole transmission layer on the surface of the perovskite absorption layer;
manufacturing a transparent conductive film layer on the surface of the electron/hole transport layer;
and manufacturing metal grid line electrodes on the surface of the transparent conductive film and the back of the battery.
Furthermore, the silicon-based heterojunction bottom layer battery adopts an N-type or P-type silicon wafer, the silicon wafer comprises a monocrystalline silicon wafer, a cast polycrystalline silicon wafer or a polycrystalline silicon wafer, and the silicon wafer comprises a double-side polished structure, a one-side polished structure and a one-side textured structure or a double-side textured structure; the front surface of the silicon wafer is sequentially provided with an intrinsic amorphous silicon layer or an intrinsic amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer, a first doped amorphous silicon layer or a doped amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer and an intermediate connecting layer, and the back surface of the silicon wafer is sequentially provided with an intrinsic amorphous silicon layer or an intrinsic amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer, a second doped amorphous silicon layer or a doped amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer and a transparent conductive film layer.
Further, when the first doping layer is doped in an N type, the second doping layer is a P type doping layer, and a hole transmission layer, a perovskite absorption layer and an electron transmission layer are sequentially manufactured on the upper surface of the middle connecting layer; when the first doping layer is doped in a P type mode, the second doping layer is doped in an N type mode, and the electron transmission layer, the perovskite absorption layer and the hole transmission layer are sequentially manufactured on the upper surface of the middle connecting layer.
Furthermore, the intermediate connecting layer is one of a transparent conductive film layer, a doped microcrystalline silicon alloy or nanocrystalline silicon alloy layer and a transparent conductive layer/metal layer/transparent conductive layer sandwich structure, the transparent conductive film layer comprises tin-doped indium oxide ITO, tungsten-doped indium oxide IWO and zinc-doped indium oxide IZO, the thickness of the transparent conductive film is 10-50nm, and the intermediate connecting layer is prepared by adopting a magnetron sputtering, evaporation or active plasma sputtering mode, a solution method and other methods; the microcrystalline silicon alloy or the nanocrystalline silicon alloy layer is one or the combination of two of N-type microcrystalline silicon or nanocrystalline silicon, P-type microcrystalline silicon alloy or nanocrystalline silicon alloy, the thickness of the nanocrystalline silicon-based thin film layer is 20-100nm, and the microcrystalline silicon-based alloy thin film or the nanocrystalline silicon-based alloy is prepared by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) or hot filament chemical vapor deposition technology; the transparent conductive layer in the transparent conductive layer/metal layer/transparent conductive layer sandwich structure film comprises one or more of ITO, IWO and IZO, and the metal layer comprises one or more of Au and Ag.
Further, the hole transport layer comprises NiOx, CuI, CuSCN, CuGaO2One or more of Spiro-OMeTAD, Spiro-TTB, ETA, X55, X80, P3HT, PTAA, PEDOT-PSS and MoOx, the thickness is 5-100nm, and the coating is formed by adopting modes of evaporation, electron beam evaporation, magnetron sputtering, spraying, slit coating, spin coating and the like.
Furthermore, the perovskite absorption layer is 2-6 layers, the optical band gap of the perovskite absorption layer is sequentially increased from bottom to top, the absorption layer with a higher band gap faces incident light, the structure of the perovskite absorption layer is ABX3, wherein A is a positively charged organic, inorganic or organic-inorganic mixed material, and the material A is an organic material MA (CH)3NH3Methylammonium), organic material FA (NH)2CH＝NH2Formamidine), and one or more of inorganic materials Cs and Rb. Meanwhile, in order to improve the efficiency or stability, macromolecular organic materials such as Gua, PEA, PMA, BA and the like can be doped to form a two-dimensional perovskite material; wherein B is a small-molecule cationic material, and the material B is one or a combination of two materials of lead (Pb) and tin (Sn); wherein X is halogen material, the material X is one or combination of bromine (Br), iodine (I) and chlorine (Cl), A, B or X is adjustedThe ratio of the composition components changes the optical bandgap width and the band position of the perovskite. The perovskite absorption layer is 2-6 layers, the optical band gap of the perovskite absorption layer is sequentially increased from bottom to top, the absorption layer with higher optical band gap faces incident light, the perovskite absorption layer is formed by spin coating, slit coating or spray coating, evaporation coating and the like, each perovskite layer is annealed and dried and then manufactured into the next perovskite absorption layer, and the total thickness is 0.4-2 um; the band gap of the perovskite layer is adjusted from 1.5eV to 1.95eV, and the thickness of each layer can be the same or different.
Further, the electron transport layer includes, but is not limited to, C60, C60 derivatives, SnO2、PCBM、TiO2And LiF with the thickness of 5-100nm, and is prepared by adopting the technical modes of evaporation, atomic layer deposition, magnetron sputtering or active plasma sputtering.
Further, the transparent conductive film layer includes, but is not limited to, ITO, IWO, IZO, or indium oxide material doped with other elements, has a thickness of 60-200nm, and is prepared by evaporation, magnetron sputtering, or active plasma sputtering.
Furthermore, the metal grid line electrode is prepared by a screen printing technology, a metal coating technology or a metal transfer technology.
From the above description of the structure of the present invention, compared with the prior art, the present invention has the following advantages:
according to the invention, by utilizing the characteristic that the band gap of the perovskite material is continuously adjustable, the top layer perovskite absorption layer is designed into a multilayer structure with gradually increased optical band gap, compared with the perovskite absorption layer with fixed optical band gap, the multilayer perovskite structure battery with gradually increased optical band gap can more effectively utilize solar spectrum and obtain higher open-circuit voltage and short-circuit current, so that the conversion efficiency of the laminated battery can be greatly improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a conventional silicon-based heterojunction perovskite tandem solar cell;
FIG. 2 is a schematic diagram of the optical bandgap absorption of a conventional silicon-based heterojunction perovskite tandem solar cell;
FIG. 3 is a schematic diagram of the optical bandgap absorption of a conventional silicon-based heterojunction perovskite tandem solar top cell;
FIG. 4 is a process flow diagram of a silicon-based heterojunction perovskite tandem solar of example 1 of the present invention;
FIG. 5 is a schematic diagram of the bottom cell structure of a silicon-based heterojunction perovskite tandem solar cell in example 1 of the present invention;
FIG. 6 is a schematic structural diagram of a silicon-based heterojunction perovskite tandem solar cell in example 1 of the present invention;
FIG. 7 is a process flow diagram of a silicon-based heterojunction perovskite tandem solar of example 2 of the present invention;
FIG. 8 is a schematic structural diagram of a bottom cell of a silicon-based heterojunction perovskite tandem solar cell in example 2 of the present invention;
FIG. 9 is a schematic structural diagram of a silicon-based heterojunction perovskite tandem solar cell in example 2 of the present invention;
fig. 10 is a schematic diagram of the optical bandgap absorption of the silicon-based heterojunction perovskite tandem solar top cell in examples 1 and 2 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
A method for preparing a silicon-based heterojunction perovskite tandem solar cell, as shown in fig. 4, the method comprises the following steps:
s1, providing a silicon-based heterojunction bottom battery, and preparing and completing an intermediate connection layer on the front surface of the bottom battery;
s2, manufacturing a hole transport layer on the surface of the middle connecting layer;
s3, manufacturing a first perovskite absorption layer on the surface of the hole transport layer;
s4, annealing and drying the perovskite absorption layer I;
s5, manufacturing a second perovskite absorption layer on the surface of the first titanium ore absorption layer;
s6, annealing and drying the perovskite absorption layer II;
s7, manufacturing a perovskite absorption layer III on the surface of the titanium ore absorption layer II;
s8, annealing and drying the perovskite absorption layer III;
s9, manufacturing an electron transmission layer on the surface of the perovskite absorption layer;
s10, manufacturing a transparent conductive film layer on the surface of the electron transport layer;
and S11, manufacturing metal grid line electrodes on the surface of the transparent conductive film and the back of the battery.
As shown in fig. 5, a silicon-based heterojunction bottom layer battery is provided, wherein the silicon-based heterojunction bottom layer battery adopts an N-type monocrystalline silicon wafer 001, and a double-sided texturing structure is formed on the surface of the silicon wafer 001 after texturing and cleaning; an intrinsic amorphous silicon layer 002, an N-type amorphous silicon layer 003 and a P-type nanocrystalline silicon intermediate connecting layer 006 are sequentially deposited on the front surface of a silicon wafer 001 through PECVD, and an intrinsic amorphous silicon layer 004 and a P-type amorphous silicon layer 005 are sequentially deposited on the back surface of the silicon wafer 001; depositing a transparent conductive film ITO film layer 007 on the back surface of the silicon wafer 001 through magnetron sputtering; the thicknesses of the intrinsic amorphous silicon layer 002, the N-type amorphous silicon layer 003, the intrinsic amorphous silicon layer 004 and the P-type amorphous silicon layer 005 are 5-10nm, the thickness of the P-type nanocrystalline silicon or microcrystalline silicon intermediate connection layer 006 is 25nm, and the thickness of the transparent conductive film ITO is 110 nm;
as shown in fig. 6, an inorganic material NiOx hole transport layer 101 is deposited on the surface of the intermediate connection layer 006 by using a magnetron sputtering technique, and the thickness is 20 nm; manufacturing a first perovskite absorption layer 102 on the surface of the hole transport layer 101 by adopting a slit coating technology, and annealing and drying at 150 ℃ for 5 minutes after coating; manufacturing a second perovskite absorption layer 103 on the surface of the first perovskite layer 102 by adopting a slit coating technology, and annealing and drying at 150 ℃ for 5 minutes after coating; manufacturing a perovskite absorption layer III 104 on the surface of the perovskite layer II 103 by adopting a slit coating technology, and annealing and drying at 150 ℃ for 5 minutes after coating; the perovskite layer I102 and the perovskite layer II 103. The structure of the perovskite layer III 104 is FA (A:)1-x)CsxPbI(3-x)BrxChanging the optical energy band gaps of the perovskite layer I102, the perovskite layer II 103 and the perovskite layer III 104 by adjusting the composition ratio of FA to Cs and the composition ratio of I to Br, as shown in FIG. 10, the band gap width Eg1 of the perovskite layer I102 is 1.55-1.70eV, the thickness is 150-200nm, the band gap width Eg2 of the perovskite layer II 103 is 1.70-1.80eV, the thickness is 150-200nm, the band gap width Eg3 of the perovskite layer III 104 is 1.80-1.95eV, and the thickness is 150-200 nm; preparing an electron transport layer 105 on the surface of the perovskite layer III 104, wherein the electron transport layer 105 is C60 or C60 derivative and SnO2The laminated structure of the two materials comprises a C60 or C60 derivative film layer with a thickness of 10nm, a C60 or C60 derivative film layer prepared by evaporation technology, and SnO2The thickness of the film layer is 10nm, SnO2The film layer is prepared by adopting an atomic layer deposition or PVD mode; preparing an ITO transparent conductive film layer 106 with the thickness of 110nm on the surface of the electron transmission layer 105 by adopting a magnetron sputtering technology; by means of a screen printing technology, low-temperature silver paste is printed on the surface of the transparent conductive film layer 106 to form a metal grid line electrode 107, low-temperature silver paste is printed on the back of the battery after drying is conducted at 150 ℃ by 5M to form a metal grid line electrode 108, and then solidification is conducted at 180 ℃ by 30M to improve the silver paste performance of the metal grid line electrodes 107 and 108.
Example 2
A method for manufacturing a silicon-based heterojunction perovskite tandem solar cell, which is different from embodiment 1 in that a first doping layer of a silicon-based heterojunction bottom layer cell is a P-type doping layer, and a second doping layer is an N-type doping layer, as shown in fig. 7, the method includes the steps of:
s1, providing a silicon-based heterojunction bottom battery, and preparing and completing an intermediate connection layer on the front surface of the bottom battery;
s2, manufacturing an electron transmission layer on the surface of the middle connecting layer;
s3, manufacturing a first perovskite absorption layer on the surface of the electron transport layer;
s4, annealing and drying the perovskite absorption layer I;
s5, manufacturing a second perovskite absorption layer on the surface of the first perovskite absorption layer;
s6, annealing and drying the perovskite absorption layer II;
s7, manufacturing a perovskite absorption layer III on the surface of the perovskite absorption layer II;
s8, annealing and drying the perovskite absorption layer III;
s9, manufacturing a hole transport layer on the surface of the perovskite absorption layer;
s10, manufacturing a transparent conductive film layer on the surface of the hole transport layer;
and S11, manufacturing metal grid line electrodes on the surface of the transparent conductive film and the back of the battery.
As shown in fig. 8, a silicon-based heterojunction bottom layer battery is provided, wherein the silicon-based heterojunction bottom layer battery adopts an N-type cast monocrystalline silicon wafer 001, and a double-sided texturing structure is formed on the surface of the silicon wafer 001 after texturing and cleaning; sequentially depositing an intrinsic amorphous silicon layer 004, a P-type amorphous silicon layer 005 and an N-type nanocrystalline silicon or microcrystalline silicon intermediate connecting layer 006 on the front surface of a silicon wafer 001 through PECVD (plasma enhanced chemical vapor deposition), and sequentially depositing an intrinsic amorphous silicon layer 002 and an N-type amorphous silicon layer 003 on the back surface of the silicon wafer 001; depositing a transparent conductive film ITO film layer 007 on the back surface of the silicon wafer 001 through magnetron sputtering; the thicknesses of the intrinsic amorphous silicon layer 002, the N-type amorphous silicon layer 003, the intrinsic amorphous silicon layer 004 and the P-type amorphous silicon layer 005 are 5-10nm, the thickness of the P-type nanocrystalline silicon or microcrystalline silicon intermediate connection layer 006 is 25nm, and the thickness of the transparent conductive film ITO is 110 nm;
as shown in fig. 9, an electron transport layer 105 is prepared on the surface of the P-type nanocrystalline silicon or microcrystalline silicon intermediate connection layer 006 by using a magnetron sputtering technique, wherein the electron transport layer 105 is a C60 or C60 derivative, the thickness of a C60 or C60 derivative film layer is 10nm, and the C60 or C60 derivative film layer is prepared by using an evaporation technique; manufacturing a first perovskite absorption layer 102 on the surface of the electron transmission layer 105 by adopting a slit coating technology, and annealing and drying at 150 ℃ for 5 minutes after coating; manufacturing a perovskite absorption layer III 104 on the surface of the perovskite layer II 103 by adopting a slit coating technology, and annealing and drying at 150 ℃ for 5 minutes after coating; the structure of the perovskite layer I102, the perovskite layer II 103 and the perovskite layer III 104 is FA(1-x)CsxPbI(3-x)BrxChanging the first perovskite layer 102, calcium by adjusting the composition ratio of FA to Cs, I to BrThe optical band gaps of the second perovskite layer 103 and the third perovskite layer 104 are shown in FIG. 10, wherein the band gap Eg1 of the first perovskite layer 102 is 1.55-1.70eV, the thickness is 150-200nm, the band gap Eg2 of the second perovskite layer 103 is 1.70-1.80eV, the thickness is 150-200nm, the band gap Eg3 of the third perovskite layer 104 is 1.80-1.95eV, and the thickness is 150-200 nm; preparing a hole transport layer 101 on the surface of the perovskite layer III 104, wherein the hole transport layer 101 is a laminated structure of organic materials PTAA and MoOx, the organic material PTAA is 20nm thick and is prepared by a solution slit coating method, and the MoOx is 2nm thick and is prepared by a vacuum evaporation method; preparing an ITO transparent conductive film layer 106 with the thickness of 110nm on the surface of the hole transport layer 101 by adopting a magnetron sputtering technology; by adopting a screen printing technology, low-temperature silver paste is printed on the surface of the transparent conductive film layer 106 to form the metal grid line electrode 107, low-temperature silver paste is printed on the back of the battery after drying at 150 ℃ by 5M to form the metal grid line electrode 108, and then curing is carried out at 180 ℃ by 30M, so that the silver paste performance of the metal grid line electrodes 107 and 108 is improved.
According to the invention, by utilizing the characteristic that the band gap of the perovskite material is continuously adjustable, the top layer perovskite absorption layer is designed into a multilayer structure with gradually increased optical band gap, compared with the perovskite absorption layer with fixed optical band gap, the multilayer perovskite structure battery with gradually increased optical band gap can more effectively utilize solar spectrum and obtain higher open-circuit voltage and short-circuit current, so that the conversion efficiency of the laminated battery can be greatly improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. A preparation method of a silicon-based heterojunction perovskite laminated solar cell is characterized by comprising the following steps: the method steps comprise:
providing a silicon-based heterojunction bottom battery, and preparing and completing an intermediate connection layer on the front side of the bottom battery;
manufacturing a hole/electron transport layer on the front surface of the battery;
manufacturing a perovskite absorption layer on the surface of the hole/electron transport layer;
manufacturing an electron/hole transmission layer on the surface of the perovskite absorption layer;
manufacturing a transparent conductive film layer on the surface of the electron/hole transport layer;
and manufacturing metal grid line electrodes on the surface of the transparent conductive film and the back of the battery.
2. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 1, wherein the method comprises the following steps: the silicon-based heterojunction bottom layer battery adopts an N-type or P-type silicon wafer, the silicon wafer comprises a monocrystalline silicon wafer, a cast polycrystalline silicon wafer or a polycrystalline silicon wafer, and the silicon wafer comprises a double-sided polishing structure, a one-sided polishing structure and a one-sided texturing structure or a double-sided texturing structure; the front surface of the silicon wafer is sequentially provided with an intrinsic amorphous silicon layer or an intrinsic amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer, a first doped amorphous silicon layer or a doped amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer and an intermediate connecting layer, and the back surface of the silicon wafer is sequentially provided with an intrinsic amorphous silicon layer or an intrinsic amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer, a second doped amorphous silicon layer or a doped amorphous, microcrystalline silicon-oxygen, silicon-carbon alloy layer and a transparent conductive film layer.
3. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 2, wherein: when the first doping layer is doped in an N type, the second doping layer is a P type doping layer, and a hole transmission layer, a perovskite absorption layer and an electron transmission layer are sequentially manufactured on the upper surface of the middle connecting layer; when the first doping layer is doped in a P type mode, the second doping layer is doped in an N type mode, and the electron transmission layer, the perovskite absorption layer and the hole transmission layer are sequentially manufactured on the upper surface of the middle connecting layer.
4. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 1, wherein the method comprises the following steps: the middle connecting layer is one of a transparent conductive film layer, a doped microcrystalline silicon alloy or a nano-crystalline silicon alloy layer and a transparent conductive layer/metal layer/transparent conductive layer sandwich structure, the transparent conductive film layer comprises tin-doped indium oxide ITO, tungsten-doped indium oxide IWO and zinc-doped indium oxide IZO, the thickness of the transparent conductive film is 10-50nm, and the middle connecting layer is prepared by adopting a magnetron sputtering, evaporation or active plasma sputtering mode, a solution method and other methods; the microcrystalline silicon alloy or the nanocrystalline silicon alloy layer is one or a combination of two of N-type microcrystalline silicon or nanocrystalline silicon, P-type microcrystalline silicon alloy or nanocrystalline silicon alloy, the thickness of the nanocrystalline silicon-based thin film layer is 20-100nm, and the microcrystalline silicon-based alloy thin film or the nanocrystalline silicon-based alloy is prepared by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) or hot filament chemical vapor deposition technology; the transparent conductive layer in the transparent conductive layer/metal layer/transparent conductive layer sandwich structure film comprises one or more of ITO, IWO and IZO, and the metal layer comprises one or more of Au and Ag.
5. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 1, wherein the method comprises the following steps: the hole transport layer comprises NiOx, CuI, CuSCN, CuGaO2One or more of Spiro-OMeTAD, Spiro-TTB, ETA, X55, X80, P3HT, PTAA, PEDOT-PSS and MoOx, the thickness is 5-100nm, and the coating is formed by adopting modes of evaporation, electron beam evaporation, magnetron sputtering, spraying, slit coating, spin coating and the like.
6. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 1, wherein the method comprises the following steps: the perovskite absorption layer is 2-6 layers, the optical band gap of the perovskite absorption layer is sequentially increased from bottom to top, the absorption layer with a higher band gap faces incident light, and the structure of the perovskite absorption layer is ABX3Wherein A is an organic, inorganic or organic-inorganic mixed material with positive charge, and the material A is one or a combination of more of an organic material MA, an organic material FA, an inorganic material Cs and Rb; macromolecular organic materials such as Gua, PEA, PMA, BA and the like can be doped to form a two-dimensional perovskite material; wherein B is a micromolecular cationic material, and the material B is one or the combination of two materials of lead and tin; wherein X is a halogen material, and the material X is one or a combination of bromine, iodine and chlorineThe optical energy band gap width and the energy band position of the perovskite are changed by adjusting A, B or the proportion of X composition components; the perovskite absorption layer is formed by spin coating, slit coating or spraying, evaporation and the like, each perovskite layer is annealed and dried and then manufactured into the next perovskite absorption layer, the total thickness is 0.4-2um, the band gap of the perovskite layer is adjusted from 1.5eV to 1.95eV, and the thicknesses of the layers are the same or different.
7. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 1, wherein the method comprises the following steps: the electron transport layer includes but is not limited to C60, C60 derivatives, SnO2、PCBM、TiO2And LiF with the thickness of 5-100nm, and is prepared by adopting the technical modes of evaporation, atomic layer deposition, magnetron sputtering or active plasma sputtering.
8. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 1, wherein the method comprises the following steps: the transparent conductive film layer comprises but is not limited to ITO, IWO, IZO or indium oxide material doped with other elements, has a thickness of 60-200nm, and is prepared by evaporation, magnetron sputtering or active plasma sputtering technology.
9. The method for preparing a silicon-based heterojunction perovskite tandem solar cell according to claim 1, wherein the method comprises the following steps: the metal grid line electrode is prepared by a screen printing technology, a metal coating technology or a metal transfer technology.
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| CN116507144A (en) * | 2023-05-10 | 2023-07-28 | 莆田市威特电子有限公司 | Novel solar cell with amorphous silicon film and perovskite laminated and preparation method thereof |
| TWI836889B (en) * | 2023-02-04 | 2024-03-21 | 勝慧科技有限公司 | Method for manufacturing nano-scale electrode coupled double heterojunction solar cell having double active regions and equipment for manufacturing the same |
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| TWI836889B (en) * | 2023-02-04 | 2024-03-21 | 勝慧科技有限公司 | Method for manufacturing nano-scale electrode coupled double heterojunction solar cell having double active regions and equipment for manufacturing the same |
| CN116507144A (en) * | 2023-05-10 | 2023-07-28 | 莆田市威特电子有限公司 | Novel solar cell with amorphous silicon film and perovskite laminated and preparation method thereof |
| CN116507144B (en) * | 2023-05-10 | 2024-01-26 | 莆田市威特电子有限公司 | Novel solar cell with amorphous silicon film and perovskite laminated and preparation method thereof |
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