CN206098421U - Heterojunction solar cell and module thereof - Google Patents
Heterojunction solar cell and module thereof Download PDFInfo
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- CN206098421U CN206098421U CN201620798225.0U CN201620798225U CN206098421U CN 206098421 U CN206098421 U CN 206098421U CN 201620798225 U CN201620798225 U CN 201620798225U CN 206098421 U CN206098421 U CN 206098421U
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- film layer
- amorphous silicon
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- silicon film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The utility model discloses a heterojunction solar cell and module thereof, including n does type monocrystalline silicon piece establish at n the first doping amorphous silicon thin film layer on first intrinsic amorphous silicon thin film layer is established on the positive first intrinsic amorphous silicon thin film layer of type monocrystalline silicon piece, establishes the first transparent conduction film layer on first doping amorphous silicon thin film layer, establishes the metal gate line positive electrode on first transparent conduction film layer, establish at n the positive high reflectance ink layer all around of type monocrystalline silicon piece, establish at n the second doping amorphous silicon thin film layer on second intrinsic amorphous silicon thin film layer is established on the second intrinsic amorphous silicon thin film layer at the type monocrystalline silicon piece back, establishes the 2nd conduction film layer on second doping amorphous silicon thin film layer, establishes the metal gate line back electrode on the 2nd conduction film layer. Adopt the utility model discloses the module of solar cell preparation can promote the short -circuit current of module by a wide margin to promote the conversion efficiency of module.
Description
Technical field
This utility model is related to technical field of solar batteries, more particularly to a kind of heterojunction solar battery and its mould
Group.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electric energy, the solar-electricity under illumination condition
Photogenerated current can be produced inside pond, electric energy is exported by electrode.In recent years, manufacture of solar cells technology constantly improves, raw
Producing cost constantly reduces, and conversion efficiency is improved constantly, and the application of solar cell power generation is increasingly extensive and becomes supply of electric power
Important energy source.
Heterojunction solar battery is the new and effective battery technology of one of which, and which combines monocrystaline silicon solar cell
With the advantage of non-crystal silicon solar cell, there is the features such as preparation technology temperature is low, conversion efficiency is higher, hot properties is good, therefore
With very big market potential.
Conducting electric current is collected using conductive film layer in the positive back side of heterojunction solar battery, is prevention battery edge conductive film layer
Conducting causes the short circuit of cell piece PN junction, generally carries out edge insulation process using following two schemes at present：1st, plate conductive film layer
When carry out press box process in the edge of cell piece, it is to avoid edge plates conductive film layer, press box width generally 1～
2mm；2nd, not press box during plated film, is etched process again to cell piece edge after plated film, and etched width generally 0.3～
1mm。
From the above, it can be seen that the region after the insulation processing of heterojunction solar battery edge does not have conductive layer, nothing
Method collects conducting electric current, and the region after edge insulation is processed accounts for the 1～4% of cell piece area, and edge insulation at present
Region effectively absorbs the average reflectance in 300～1100nm wave-length coverages in battery and is generally less than 13%, therefore is greatly decreased
Effective absorption of the battery to sunlight, so as to reducing the electric current and conversion efficiency of battery.
Utility model content
For the problems referred to above, this utility model provides a kind of heterojunction solar battery and its module, greatly improves
Effective absorption of the n-type monocrystalline substrate solaode edge insulation processing region to sunlight at present.
To solve above-mentioned technical problem, the technical scheme adopted by this utility model is：A kind of heterojunction solar battery,
Including n-type monocrystalline silicon piece, the positive first intrinsic amorphous silicon film layer of n-type monocrystalline silicon piece is located at, the first intrinsic amorphous is located at
The first doped amorphous silicon film layer on silicon membrane layer, the first transparent conductive film being located on the first doped amorphous silicon film layer
Layer, the metal grid lines anelectrode being located in the first transparent conductive film layer；It is located at the high reflection of n-type monocrystalline silicon piece front surrounding
Ink layer；The second intrinsic amorphous silicon thin layer at the n-type monocrystalline silicon piece back side is located at, is located on the second intrinsic amorphous silicon thin layer
The second doped amorphous silicon film layer, the second conductive membrane layer being located on the second doped amorphous silicon film layer is located at second and leads
Metal grid lines back electrode on thin film layer.
Further, the first intrinsic amorphous silicon film thickness degree is 3～10nm, the first doped amorphous silicon film thickness
Spend for 3～10nm；Second intrinsic amorphous silicon thin film layer thickness be 3～10nm, the second doped amorphous silicon film thickness degree be 3～
10nm。
Further, when the first doped amorphous silicon film layer is n-type amorphous thin Film layers, second doping is non-
Layer polycrystal silicon film is then p-type amorphous thin Film layers；When the first doped amorphous silicon film layer is p-type amorphous thin Film layers,
The second doped amorphous silicon film layer is then n-type amorphous thin Film layers.
Further, the high reflection ink layer width is 0.3～1.5mm, and thickness is 5～40um, 300nm～1100nm
Wave-length coverage average reflectance is more than 85%.
Further, first transparent conductive film layer and the distance of battery edge are 0.3～1.5mm, and second is conductive
Thin layer is 0.3～1.5mm with the distance of battery edge.
Further, the metal grid lines anelectrode and metal grid lines back electrode are many main grid pattern gate line electrodes, are passed through
Silver paste is printed or is electroplated metal and formed.
A kind of module of heterojunction solar battery, including backboard body, the first packaging plastic being located on backboard body are located at
Multiple described solaodes on one packaging plastic, the solaode connect into battery strings by welding, are located at the sun
The second packaging plastic on energy battery, first packaging plastic, the second packaging plastic are coated on the surrounding of solaode and welding, if
Front plate body on the second packaging plastic, the front plate body are tempering pattern glass.
Incidence surface edge insulating regions printing or coating one floor height reflectance ink of this utility model battery in battery
Layer, high reflection ink layer average reflectance in effective 300～1100nm of absorption wave-length coverages of battery are more than 85%, significantly carry
The high reflectance of the invalid absorption region in battery edge, makes module, battery four using this utility model solaode
The reflected light of circumferential edges insulating regions under the multiple refraction of header board tempering pattern glass, most reflected lights by battery again
Effectively absorb, so as to the short circuit current of module is substantially improved, and then lift the conversion efficiency of module.
Description of the drawings
The accompanying drawing for constituting the part of the application is used for providing further understanding to of the present utility model, of the present utility model
Schematic description and description is used to explain this utility model, does not constitute to improper restriction of the present utility model.In accompanying drawing
In：
Fig. 1 is a kind of structural representation of heterojunction solar battery of this utility model；
Fig. 2 is the enlarged drawing of A in this utility model Fig. 1；
Fig. 3 is contrast schematic diagram after the insulating regions high reflection ink layer before processing of this utility model battery edge；
Top views of the Fig. 4 for this utility model high reflection ink layer；
Fig. 5 is a kind of heterojunction solar modular structure schematic diagram of this utility model；
Fig. 6 is a kind of top view of heterojunction solar module of this utility model.
Specific embodiment
In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to this utility model.It should be appreciated that specific embodiment described herein is only to explain
This utility model, is not used to limit this utility model.
As Figure 1-4, a kind of heterojunction solar battery, including n-type monocrystalline silicon piece 1, is located at n-type monocrystalline silicon piece 1
Positive first intrinsic amorphous silicon film layer 2, the first doped amorphous silicon film layer being located on first intrinsic amorphous silicon film layer 2
4, the first transparent conductive film layer 6 being located on the first doped amorphous silicon film layer 4 is located in the first transparent conductive film layer 6
Metal grid lines anelectrode 8；It is located at the high reflection ink layer 10 of n-type monocrystalline silicon piece front surrounding；It is located at n-type monocrystalline silicon piece 1
The second intrinsic amorphous silicon thin layer 3 at the back side, the second doped amorphous silicon film layer being located on the second intrinsic amorphous silicon thin layer 3
5, the second conductive membrane layer 7 being located on the second doped amorphous silicon film layer 5, the metal gate being located on the second conductive membrane layer 7
Line back electrode 9.
2 thickness of first intrinsic amorphous silicon film layer be 3～10nm, 4 thickness of the first doped amorphous silicon film layer be 3～
10nm；Second intrinsic amorphous silicon thin layer, 3 thickness is 3～10nm, 5 thickness of the second doped amorphous silicon film layer is 3～10nm.Institute
When to state the first doped amorphous silicon film layer 4 be n-type amorphous thin Film layers, the second doped amorphous silicon film layer 3 is then p-type
Amorphous thin Film layers；When the first doped amorphous silicon film layer 4 is p-type amorphous thin Film layers, second doped amorphous silicon
Thin layer 3 is then n-type amorphous thin Film layers.
First transparent conductive film layer 6 is indium tin oxide films, Al-Doped ZnO film, in tungsten-doped indium oxide
At least one, the thickness of first transparent conductive film layer 6 is 10～150nm.Second conductive membrane layer 7 is Indium sesquioxide.
In tin thin film, Al-Doped ZnO film, tungsten-doped indium oxide, metallic copper, argent, Titanium, metallic aluminium, metallic nickel alloy extremely
Few one kind, the thickness of second conductive membrane layer 7 is 100～1000nm.First transparent conductive film layer 6 is led with second
Thin film layer 7 is formed using physical gas phase deposition technology.
10 width H1 of the high reflection ink layer be 0.3～1.5mm, thickness be 5～40um, 300nm～1100nm wavelength
Scope average reflectance is more than 85%.First transparent conductive film layer 6 is 0.3～1.5mm apart from H2 with battery edge,
Second conductive membrane layer 7 is 0.3～1.5mm apart from H3 with battery edge.
Incidence surface edge insulating regions printing or coating one floor height reflecting ink layer of this utility model in battery are high
Reflecting ink layer average reflectance in effective 300～1100nm of absorption wave-length coverages of battery is more than 85%, greatly improved
The reflectance of the invalid absorption region in battery edge.
As seen in figs. 5-6, a kind of module of heterojunction solar battery, including backboard body 13, is located on backboard body 13
First packaging plastic 12, the multiple described solaodes 11 being located on the first packaging plastic 12, the solaode is by weldering
Band connects into battery strings, the second packaging plastic 14 being located on solaode 11, first packaging plastic 12, the second packaging plastic 14
The surrounding of solaode and welding is coated on, the front plate body 15 being located on the second packaging plastic 14, the front plate body 15 are tempering
Pattern glass.Module is made using this utility model solaode, the reflected light of battery edge insulating regions is in header board
Under the multiple refraction of tempering pattern glass, most reflected lights are effectively absorbed again by battery, so as to module is substantially improved
Short circuit current, and then lift the conversion efficiency of module.
Preferred embodiment of the present utility model is the foregoing is only, it is not to limit this utility model, all at this
Any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in this utility model
Protection domain within.
Claims (7)
1. a kind of heterojunction solar battery, it is characterised in that：Including n-type monocrystalline silicon piece, n-type monocrystalline silicon piece is located at positive
First intrinsic amorphous silicon film layer, the first doped amorphous silicon film layer being located on first intrinsic amorphous silicon film layer are located at
The first transparent conductive film layer on one doped amorphous silicon film layer, is just being located at metal grid lines in the first transparent conductive film layer
Electrode；It is located at the high reflection ink layer of n-type monocrystalline silicon piece front surrounding；Be located at the n-type monocrystalline silicon piece back side second is intrinsic non-
Layer polycrystal silicon film, the second doped amorphous silicon film layer being located on the second intrinsic amorphous silicon thin layer, is located at the second doping amorphous
The second conductive membrane layer on silicon membrane layer, the metal grid lines back electrode being located on the second conductive membrane layer.
2. a kind of heterojunction solar battery according to claim 1, it is characterised in that：The first intrinsic amorphous silicon film
Thickness degree is 3～10nm, the first doped amorphous silicon film thickness degree is 3～10nm；Second intrinsic amorphous silicon thin film layer thickness is 3
～10nm, the second doped amorphous silicon film thickness degree are 3～10nm.
3. a kind of heterojunction solar battery according to claim 1, it is characterised in that：First doped amorphous silicon film
When layer is n-type amorphous thin Film layers, the second doped amorphous silicon film layer is then p-type amorphous thin Film layers；Described first
When doped amorphous silicon film layer is p-type amorphous thin Film layers, the second doped amorphous silicon film layer is then thin for n-type non-crystalline silicon
Film layer.
4. a kind of heterojunction solar battery according to claim 1, it is characterised in that：The high reflection ink layer width is
0.3～1.5mm, thickness are 5～40um, and 300～1100nm wave-length coverages average reflectance is more than 85%.
5. a kind of heterojunction solar battery according to claim 1, it is characterised in that：First transparent conductive film layer
Distance with battery edge is 0.2～1.5mm, and the second conductive membrane layer is 0.2～1.5mm with the distance of battery edge.
6. a kind of heterojunction solar battery according to claim 1, it is characterised in that：The metal grid lines anelectrode and gold
Category grid line back electrode is many main grid pattern gate line electrodes, metal is printed or electroplated by silver paste and is formed.
7. a kind of module of heterojunction solar battery, it is characterised in that：Including backboard body, the first encapsulation being located on backboard body
Glue, the solaode multiple as claimed in claim 1 being located on the first packaging plastic, the solaode are connected by welding
Battery strings are connected into, if the second packaging plastic on the solar cell, first packaging plastic, the second packaging plastic are coated on solar energy
The surrounding of battery and welding, the front plate body being located on the second packaging plastic, the front plate body are tempering pattern glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620798225.0U CN206098421U (en) | 2016-07-27 | 2016-07-27 | Heterojunction solar cell and module thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620798225.0U CN206098421U (en) | 2016-07-27 | 2016-07-27 | Heterojunction solar cell and module thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206098421U true CN206098421U (en) | 2017-04-12 |
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ID=58467767
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620798225.0U Active CN206098421U (en) | 2016-07-27 | 2016-07-27 | Heterojunction solar cell and module thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379894A (en) * | 2019-06-14 | 2019-10-25 | 晋能光伏技术有限责任公司 | A kind of anti-short circuit production method of heterojunction solar battery conductive membrane layer |
| CN110729377A (en) * | 2018-07-16 | 2020-01-24 | 福建金石能源有限公司 | Preparation method of double-sided power generation heterojunction solar cell and tile-stacked module thereof |
-
2016
- 2016-07-27 CN CN201620798225.0U patent/CN206098421U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729377A (en) * | 2018-07-16 | 2020-01-24 | 福建金石能源有限公司 | Preparation method of double-sided power generation heterojunction solar cell and tile-stacked module thereof |
| CN110379894A (en) * | 2019-06-14 | 2019-10-25 | 晋能光伏技术有限责任公司 | A kind of anti-short circuit production method of heterojunction solar battery conductive membrane layer |
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