CN114530525A - Preparation method and application of non-silver metallized structure - Google Patents
Preparation method and application of non-silver metallized structure Download PDFInfo
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- CN114530525A CN114530525A CN202210098811.4A CN202210098811A CN114530525A CN 114530525 A CN114530525 A CN 114530525A CN 202210098811 A CN202210098811 A CN 202210098811A CN 114530525 A CN114530525 A CN 114530525A
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- 229910052709 silver Inorganic materials 0.000 title claims abstract description 53
- 239000004332 silver Substances 0.000 title claims abstract description 53
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000853 adhesive Substances 0.000 claims abstract description 36
- 230000001070 adhesive effect Effects 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000011888 foil Substances 0.000 claims abstract description 31
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000002002 slurry Substances 0.000 claims abstract description 17
- 238000007639 printing Methods 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011889 copper foil Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013035 low temperature curing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method and application of a non-silver metallized structure, wherein the preparation method comprises the following steps: s01, depositing a TCO transparent conductive film on the silicon wafer, wherein the thickness of the conductive film is 60-140 nm; s02, printing non-silver conductive adhesive on the TCO transparent conductive film; s03 curing the adhesive metal foil layer. Aiming at the characteristic that the requirement of the HJT heterojunction high-efficiency battery on the back light receiving rate is not high, the good current collecting and transmitting characteristic of the TCO conducting film and the excellent conducting characteristic of the metal foil are combined, and the novel-structure preparation method of the TCO conducting film, the non-silver conducting adhesive printing and the metal foil is adopted, so that the performance of the battery is ensured, and the slurry cost of the battery can be obviously reduced.
Description
Technical Field
The invention belongs to the technical field of photovoltaic module production, and particularly relates to a preparation method and application of a non-silver metallized structure.
Background
The silver paste accounts for the highest proportion of the non-silicon cost for manufacturing the crystalline silicon solar cell. At present, the mainstream method for metallizing a crystalline silicon solar cell is screen printing + silver paste (solid content 90% -92%, 8% of glass powder and 1% of organic solvent), the technology of the metallization method is mature, but the cost is high, in view of the current situation of the screen printing technology and the silver paste system, the reduction space of the grid line width and the silver paste consumption is limited, and the price of the noble metal silver is high, which becomes one of the main factors for increasing the cell cost.
In the mainstream market of the existing high-efficiency battery, the HJT heterojunction battery is favored by customers with the advantages of high conversion efficiency, simple low-temperature manufacturing process, compatibility with thin silicon chip application, low temperature coefficient and the like, but the cost of the low-temperature silver paste matched with the HJT heterojunction battery is 2 times that of the silver paste of the conventional battery, and the HJT heterojunction battery becomes one of the main factors limiting the technical development of the HJT heterojunction battery.
Disclosure of Invention
In order to solve the problems in the background art, aiming at the characteristic that the requirement of the HJT heterojunction high-efficiency battery on the back light receiving rate is not high, and combining the good current collection and transmission characteristics of the TCO conductive film and the excellent conductive characteristics of the metal foil, the invention adopts a novel structure preparation method of the TCO conductive film, non-silver conductive adhesive printing and the metal foil, so that the battery performance is ensured, and meanwhile, the slurry cost of the battery can be obviously reduced.
The invention relates to a preparation method of a non-silver metallized structure, which comprises the following steps:
s01 depositing TCO transparent conductive film on the silicon chip, wherein the thickness of the conductive film layer is 60-140 nm;
s02, printing a non-silver conductive adhesive on the TCO transparent conductive film;
s03 solidifying the bonded metal foil layer.
Further, the TCO transparent conductive film is deposited by adopting a PVD or RPD method.
Further, the TCO transparent conductive film comprises binary or ternary system oxide, and the oxide is Indium Tin Oxide (ITO) or zinc oxide (ZnO).
Further, the non-silver conductive adhesive is a metal conductive film made of one or more of copper foil, aluminum foil or copper-aluminum foil.
Further, the non-silver conductive adhesive comprises the following substances: 96-98% of metal powder particles and an organic carrier.
Based on the above non-silver metalized structure, the application provides an application of the non-silver metalized structure to an HTJ-MWT battery, and the preparation method of the HTJ-MWT battery comprises:
s01, carrying out laser drilling on the monocrystalline silicon substrate;
s02 silicon wafer cleaning and polishing: texturing and cleaning an N-type monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s03 depositing intrinsic amorphous silicon layer on both sides;
s04, performing N-type amorphous silicon deposition on the front surface;
s05, depositing P-type amorphous silicon on the back surface;
TCO deposition is carried out on the front surface of S06;
TCO deposition is carried out on the back of S07;
s08, printing etching slurry on the back around the hole to perform local etching of back TCO and P-type amorphous silicon;
s09 screen printing pore-plugging slurry: printing the hole plugging slurry into holes which are punched on the silicon wafer by laser in advance from the back;
s10 screen printing front low-temperature silver paste;
s11, screen printing non-silver conductive adhesive on the back of the substrate, then pasting metal foil, and then carrying out low-temperature curing;
and S12, performing light injection or electric injection process, and finally completing the preparation of the battery.
The beneficial effect of this application contains:
the novel preparation method of the TCO conductive film, the non-silver conductive adhesive printing and the metal foil provided by the invention creates a novel non-silver metallization technical route, and compared with the conventional silver paste printing, the novel structure and the preparation method provided by the invention have the following beneficial effects:
1. according to the invention, the good current collection and transmission characteristics of the TCO conductive film are combined with the excellent conductive characteristics of the metal foil, and non-silver conductive adhesive is adopted for adhesion (including metal slurry such as a silver-coated copper mode, Ni, Sn, Al and the like), so that the electrical property advantage of the high-efficiency battery is ensured, and the cost of the slurry is greatly reduced;
2. the outermost layer adopts the design of metal foil, so that the design of the component is easier to match, and the flow steps of the component can be simplified.
Drawings
FIG. 1 is a schematic view of a non-silver metallization structure provided by the present invention;
FIG. 2 is a schematic diagram of a MWT-HJT stacked new back field cell structure according to the present invention;
FIG. 3 is a graph showing the variation of the organic vehicle content of the conductive adhesive and the trend of the contact resistivity;
fig. 4 is a graph of the content change of the organic vehicle and the adhesion trend of the conductive adhesive.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be purely exemplary and are not intended to limit the scope of the invention, which is to be given the full breadth of the claims appended hereto.
Example 1:
the invention relates to a preparation method of a non-silver metallized structure, which comprises the following steps:
s01 depositing TCO transparent conductive film on the silicon chip, wherein the thickness of the conductive film layer is 60-140 nm;
s02, printing a non-silver conductive adhesive on the TCO transparent conductive film;
s03 solidifying the bonded metal foil layer.
Furthermore, a PVD or RPD method is adopted to deposit the TCO transparent conductive film, and the TCO transparent conductive film is an oxide binary or ternary system such as Indium Tin Oxide (ITO), zinc oxide (ZnO) and the like.
Further, the non-silver conductive adhesive is composed of copper powder particles or other metal powder particles (96-98%), an organic carrier (2-4%) and the like; the metal foil is one or a combination of copper foil, aluminum foil or copper-aluminum foil.
Based on the preparation method, the invention provides a novel structure of TCO conductive film, non-silver conductive adhesive and metal foil, taking a dot matrix pattern matched with a whole metal foil as an example, as shown in FIG. 1, the following are sequentially performed from top to bottom: metal foil 3, non-silver conductive adhesive (lattice pattern) 2 and TCO transparent conductive film 1.
Example 2:
this example also provides a second use of an unsilver metallized structure for an HTJ-MWT cell, the method comprising:
s01, carrying out laser drilling on the monocrystalline silicon substrate;
s02 silicon wafer cleaning and polishing: texturing and cleaning an N-type monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s03 depositing intrinsic amorphous silicon layer on both sides;
s04, performing N-type amorphous silicon deposition on the front surface;
s05, depositing P-type amorphous silicon on the back surface;
TCO deposition is carried out on the front surface of S06;
TCO deposition is carried out on the back of S07;
s08 printing etching paste on the back surface around the hole to perform local etching of the back surface TCO and the P-type amorphous silicon, in this embodiment, printing etching paste in the range within 1.5mm outside the hole to perform local etching of the back surface TCO and the P-type amorphous silicon.
S09 screen printing hole plugging slurry: printing the hole plugging slurry into holes which are punched on the silicon wafer by laser in advance from the back;
s10 screen printing front low-temperature silver paste;
s11, screen printing non-silver conductive adhesive on the back of the substrate, then pasting metal foil, and then carrying out low-temperature curing;
and S12, performing light injection or electric injection process, and finally completing the preparation of the battery.
The MWT-HJT cell structure obtained by the above-mentioned preparation method is a structure of a new cell stacked by a new structure, and in this example, as shown in fig. 2, the following steps are performed in sequence from top to bottom: the solar cell comprises a front grid line 8, a TCO transparent conductive film 4, an N-type amorphous silicon deposit 3, an intrinsic amorphous silicon layer 2, a monocrystalline silicon substrate 1, an intrinsic amorphous silicon layer 5, a P-type amorphous silicon deposit 6, a TCO transparent conductive film 7, a non-silver conductive adhesive 9, a metal foil 10, a through hole and a hole plugging slurry 11.
Furthermore, a PVD or RPD method is adopted to deposit the TCO transparent conductive film, and the TCO transparent conductive film is an oxide binary or ternary system such as Indium Tin Oxide (ITO), zinc oxide (ZnO) and the like.
Furthermore, the non-silver conductive adhesive is copper powder particles or other metal powder particles, the mass fraction of the non-silver conductive adhesive is 70-98%, the mass fraction of the organic carrier is 2-30%, wherein the organic carrier mainly comprises organic dispersing agents and organic adhesive components, the organic dispersing agents uniformly wrap the metal powder particles, the organic adhesive enables the metal particles to be adhered with TCO transparent conductive films, metal foils and the like, and the conductive adhesive can achieve a conductive effect after being cured; and the matched metal foil is one or the combination of a plurality of copper foils, aluminum foils or copper aluminum foils.
The specific non-silver conductive adhesive takes copper powder as an example, five conductive adhesives with the organic carrier contents of 2%, 2.5%, 3%, 3.5% and 4% are respectively subjected to contact resistivity and adhesive force tests of the paste and TCO, and the obtained results are shown in fig. 3 and 4, and it can be seen from fig. 3 and 4 that as the organic carrier component of the conductive adhesive increases, the tensile force between the paste and the TCO film increases, but the contact resistivity with the TCO film also increases, the conductivity decreases, and the conductive adhesive and the low-temperature silver paste (6.0E-01 Ohmcm) are subjected to contact resistivity and adhesive force tests2) Compared with the conductive adhesive prepared from 3% of organic carrier and 97% of copper powder, the conductive adhesive can meet the requirement of 1N of back surface field adhesion, is matched with metal foil for adhesion, and can optimize back surface field conductivity, thereby replacing silver paste printing and achieving the purpose of reducing cost.
The invention combines the good current collection and transmission characteristics of the TCO conductive film with the excellent conductive characteristics of the metal foil, and adopts non-silver conductive adhesive for adhesion, including metal slurry such as Cu, Ni, Sn, Al and the like, the conductive adhesive pattern takes lattice design as an example, the consumption of each piece of slurry is reduced from 100mg to 60mg, the consumption is reduced by 40%, the cost of bonding and matching pure copper foil is 0.04 yuan/piece, the cost of non-silver metallization can be reduced to 0.22 yuan/piece, compared with silver paste metallization, the cost is reduced by 74%, and the electrical performance advantage of a high-efficiency battery is ensured, and the specific cost pair is as follows:
TABLE 1 metallization cost comparison
| Metallization mode | Cost of slurry | Consumption per unit of slurry | Others | Total cost of the single chip |
| Silver paste metallization | 8500 yuan/kg (Low temperature silver paste) | 100mg | 0.85 yuan | |
| Non-silver metallization | 3000 yuan/kg (copper paste) | 60mg | 0.04 Yuan/tablet (cost of pure copper foil) | 0.22 yuan |
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (6)
1. A method of making a non-silver metallized structure, comprising:
s01 depositing TCO transparent conductive film on the silicon chip, wherein the thickness of the conductive film layer is 60-140 nm;
s02, printing a non-silver conductive adhesive on the TCO transparent conductive film;
s03 solidifying the bonded metal foil layer.
2. The method of claim 1, wherein the TCO transparent conductive film is deposited by PVD or RPD.
3. The method as claimed in claim 2, wherein the TCO transparent conductive film comprises binary or ternary oxide, and the oxide is Indium Tin Oxide (ITO) or zinc oxide (ZnO).
4. The method as claimed in any one of claims 1 to 3, wherein the non-silver conductive adhesive is a metal conductive film made of one or more of copper foil, aluminum foil or copper-aluminum foil.
5. The method of claim 4, wherein the non-silver conductive paste comprises: 96-98% of metal powder particles and an organic carrier.
6. Use of an unsag metallized structure for an HTJ-MWT cell, said HTJ-MWT cell being prepared by a process comprising:
s01, carrying out laser drilling on the monocrystalline silicon substrate;
s02 silicon wafer cleaning and polishing: texturing and cleaning an N-type monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s03 depositing intrinsic amorphous silicon layer on both sides;
s04, performing N-type amorphous silicon deposition on the front surface;
s05, depositing P-type amorphous silicon on the back surface;
carrying out TCO deposition on the front surface of S06;
carrying out TCO deposition on the back surface of S07;
s08, printing etching slurry on the back around the hole to perform local etching of back TCO and P-type amorphous silicon;
s09 screen printing pore-plugging slurry: printing the hole plugging slurry into holes which are punched on the silicon wafer by laser in advance from the back;
s10 screen printing front low-temperature silver paste;
s11, firstly screen-printing non-silver conductive adhesive on the back, then pasting metal foil, and then curing at low temperature;
and S12, performing light injection or electric injection process, and finally completing the preparation of the battery.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210098811.4A CN114530525A (en) | 2022-01-27 | 2022-01-27 | Preparation method and application of non-silver metallized structure |
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| Application Number | Priority Date | Filing Date | Title |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843373A (en) * | 2022-01-27 | 2022-08-02 | 江苏日托光伏科技股份有限公司 | Preparation method of HTJ battery |
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