CN204315607U - A kind of assemblnig HIT solar cell - Google Patents
A kind of assemblnig HIT solar cell Download PDFInfo
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- CN204315607U CN204315607U CN201420703929.6U CN201420703929U CN204315607U CN 204315607 U CN204315607 U CN 204315607U CN 201420703929 U CN201420703929 U CN 201420703929U CN 204315607 U CN204315607 U CN 204315607U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a kind of assemblnig HIT solar cell, comprise front combination electrode, recombination P-type doped layer, the first complex eigen semiconductor layer, N-type silicon, the second complex eigen semiconductor layer, recombination N-type doped layer and back side combination electrode, wherein, front combination electrode comprises the first compound TCO transparent conductive film and front electrode; Recombination P-type doped layer comprises graphene layer and P type doped layer; First complex eigen semiconductor layer comprises graphene layer and the first intrinsic semiconductor layer; Second complex eigen semiconductor layer comprises graphene layer and the second intrinsic semiconductor layer; Recombination N-type doped layer comprises graphene layer and N-type doped layer; Back side combination electrode comprises the second compound TCO transparent conductive film and backplate.Each Rotating fields of the utility model HIT battery can be taken apart arbitrarily and recombinant, when certain Rotating fields can be replaced extremely, substantially increases the process velocity of battery and the ease of technique.
Description
Technical field
The utility model relates to technical field of solar batteries, particularly relates to a kind of assemblnig HIT solar cell.
Background technology
HIT heterojunction solar battery is a kind of high-efficiency battery of current industrialization conversion efficiency of solar cell highest record, HIT battery structure as shown in Figure 1, comprises positive electrode, TCO transparent conductive film, P type a-Si:H layer, intrinsic a-Si:H layer, N-type silicon, intrinsic a-Si:H layer, N-type a-Si:H layer, TCO transparent conductive film and back electrode.Its preparation process is as follows: utilize the front of the N-type silicon chip of PECVD after making herbs into wool to deposit very thin intrinsic a-Si:H layer and P type a-Si:H layer, then at intrinsic a-Si:H layer and the N-type a-Si:H layer of silicon chip back side deposition of thin; Utilize the technology such as magnetron sputtering on two sides deposit transparent conductive oxide film (TCO) of battery, on TCO, prepare Ag electrode by the method for silk screen printing.
The intrinsic a-Si:H layer of HIT battery, P type a-Si:H layer, N-type a-Si:H layer and TCO thin film are by the deposition of PECVD at silicon chip last layer layer, and technological requirement is high, once it is abnormal to find that certain one deck occurs, needing to be carried out by this battery doing over again process or scrapping process.Such as, when depositing P type a-Si:H layer, PECVD device fault, in the a-Si:H layer of deposition, P type doping is too high, the heterojunction of such formation is defective, need intrinsic a-Si:H layer, the P type a-Si:H layer erosion removal plated film again again that will silicon chip deposit, after plated film, the conversion efficiency of HIT also can decline greatly again.
Utility model content
Technical problem to be solved in the utility model is, provide a kind of assemblnig HIT solar cell, its each Rotating fields can be taken apart arbitrarily and recombinant.
In order to solve the problems of the technologies described above, the utility model provides a kind of assemblnig HIT solar cell, comprise front combination electrode, recombination P-type doped layer, the first complex eigen semiconductor layer, N-type silicon, the second complex eigen semiconductor layer, recombination N-type doped layer and back side combination electrode successively, wherein
Described front combination electrode comprises the first compound TCO transparent conductive film and front electrode, described front electrode is printed on the first compound TCO transparent conductive film, and described first compound TCO transparent conductive film comprises graphene layer and a TCO transparent conductive film;
Described recombination P-type doped layer comprises graphene layer and P type doped layer;
Described first complex eigen semiconductor layer comprises graphene layer and the first intrinsic semiconductor layer;
Described second complex eigen semiconductor layer comprises graphene layer and the second intrinsic semiconductor layer;
Described recombination N-type doped layer comprises graphene layer and N-type doped layer;
Described back side combination electrode comprises the second compound TCO transparent conductive film and backplate, described backplate is printed on the second compound TCO transparent conductive film, and described second compound TCO transparent conductive film comprises graphene layer and the 2nd TCO transparent conductive film.
As the improvement of such scheme, described graphene layer is single-layer graphene, and its resistivity is less than 10
-8Ω cm, light transmittance is 97%-99.5%.
As the improvement of such scheme, described graphene layer is 2-10 layer graphene, and its resistivity is less than 10
-8Ω cm, light transmittance is 90%-97%.
As the improvement of such scheme, described P type doped layer is P-type non-crystalline silicon, P type microcrystal silicon, P type
gaas, P type CIGS or P type CdTe.
As the improvement of such scheme, described N-type doped layer is N-type amorphous silicon, N-type microcrystal silicon, N-type GaAs, N-type CIGS or N-type CdTe.
As the improvement of such scheme, described first intrinsic semiconductor layer is intrinsic amorphous silicon or microcrystal silicon; Described second intrinsic semiconductor layer is intrinsic amorphous silicon or microcrystal silicon.
As the improvement of such scheme, a described TCO transparent conductive film is ZnO, ITO or FTO, and thickness is 50-300nm, and light transmittance is 85%-97%.
As the improvement of such scheme, described 2nd TCO transparent conductive film is ZnO, ITO or FTO, and thickness is 80-300nm, and light transmittance is 83%-97%.
As the improvement of such scheme, described front electrode, backplate are Ag electrode or Cu electrode.
As the improvement of such scheme, described front combination electrode, recombination P-type doped layer, the first complex eigen semiconductor layer, N-type silicon, the second complex eigen semiconductor layer, recombination N-type doped layer are formed with back side combination electrode and contact after lamination, and the pressure of lamination is 1.1-2.0 standard atmospheric pressure.
Implement the utility model, there is following beneficial effect:
The utility model provides a kind of assemblnig HIT solar cell, comprises front combination electrode, recombination P-type doped layer, the first complex eigen semiconductor layer, N-type silicon, the second complex eigen semiconductor layer, recombination N-type doped layer and back side combination electrode.Above-mentioned each composite bed includes graphene layer, by high transmission rate, the ultra-thin and high-flexibility of Graphene, the P layer needed for HIT solar cell, intrinsic layer, N layer and electrode is prepared according to demand on graphene layer, because the pliability of the P layer of this compound, intrinsic layer, N layer and electrode is good, connect and covered in N-type silicon chip, just can be prepared HIT battery through lamination.Each Rotating fields of the utility model HIT battery can be taken apart arbitrarily and recombinant, when certain Rotating fields can be replaced extremely, substantially increases the process velocity of battery and the ease of technique.
Accompanying drawing explanation
Fig. 1 is the structural representation of the HIT solar cell of prior art;
Fig. 2 is the structural representation of the assemblnig HIT solar cell of the utility model;
Fig. 3 is the structural representation of the combination electrode of front shown in Fig. 2;
Fig. 4 is the structural representation of the doped layer of recombination P-type shown in Fig. 2;
Fig. 5 is the structural representation of the first complex eigen semiconductor layer shown in Fig. 2;
Fig. 6 is the structural representation of the second complex eigen semiconductor layer shown in Fig. 2;
Fig. 7 is the structural representation of the doped layer of recombination N-type shown in Fig. 2;
Fig. 8 is the structural representation of the combination electrode of the back side shown in Fig. 2.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model is described in further detail.
Show existing HIT solar cell see Fig. 1, Fig. 1, comprise positive electrode 1, TCO transparent conductive film 2, P type a-Si:H layer 3, intrinsic a-Si:H layer 4, N-type silicon 5, intrinsic a-Si:H layer 6, N-type a-Si:H layer 7, TCO transparent conductive film 8 and back electrode 9.
Its preparation process is as follows: utilize the front of the N-type silicon chip of PECVD after making herbs into wool to deposit very thin intrinsic a-Si:H layer and P type a-Si:H layer, then at intrinsic a-Si:H layer and the N-type a-Si:H layer of silicon chip back side deposition of thin; Utilize the technology such as magnetron sputtering on two sides deposit transparent conductive oxide film (TCO) of battery, on TCO, prepare Ag electrode by the method for silk screen printing.
The intrinsic a-Si:H layer of HIT battery, P type a-Si:H layer, N-type a-Si:H layer and TCO thin film are by the deposition of PECVD at silicon chip last layer layer, and technological requirement is high, once it is abnormal to find that certain one deck occurs, needing to be carried out by this battery doing over again process or scrapping process.Such as, when depositing P type a-Si:H layer, PECVD device fault, in the a-Si:H layer of deposition, P type doping is too high, the heterojunction of such formation is defective, need intrinsic a-Si:H layer, the P type a-Si:H layer erosion removal plated film again again that will silicon chip deposit, after plated film, the conversion efficiency of HIT also can decline greatly again.
For this reason, the utility model provides a kind of assemblnig HIT solar cell, as shown in Figure 2, front combination electrode 1, recombination P-type doped layer 2, first complex eigen semiconductor layer 3, N-type silicon 4, second complex eigen semiconductor layer 5, recombination N-type doped layer 6 and back side combination electrode 7 is comprised from top to bottom successively.
Front combination electrode 1, recombination P-type doped layer 2, first complex eigen semiconductor layer 3, N-type silicon 4, second complex eigen semiconductor layer 5, recombination N-type doped layer 6 form good contacting with back side combination electrode 7 after lamination, be interconnected to make each Rotating fields, wherein, the pressure of lamination is preferably 1.1-2.0 standard atmospheric pressure.
See Fig. 3, described front combination electrode 1 comprises the first compound TCO transparent conductive film 11 and front electrode 12, and described front electrode 12 is printed on the first compound TCO transparent conductive film 11, wherein, front electrode 12 can be Ag electrode or Cu electrode, but is not limited thereto.
First compound TCO transparent conductive film 11 comprises graphene layer 111 and a TCO transparent conductive film 112, graphene layer 111 deposits a TCO transparent conductive film 112 and form laminated film, wherein, one TCO transparent conductive film 112 can be ZnO, ITO or FTO, thickness is 50-300nm, and light transmittance is 85%-97%.
Preferably, the thickness of a TCO transparent conductive film 112 is 100-250nm, and light transmittance is 88-95%.Better, the thickness of a TCO transparent conductive film 112 is 100 nm, 120 nm, 150 nm, 180 nm, 200 nm, 220 nm or 250nm, and light transmittance is 88%, 90%, 92%, 94% or 95%, but is not limited thereto.
It should be noted that, TCO (transparentconductiveoxide, transparent conductive oxide) film mainly comprises oxide and the composite multi-component oxide film material thereof of In, Sb, Zn and Cd, have that forbidden band is wide, visible range light transmission is high and the common light electrical characteristics such as resistivity is low, there is higher flexibility and chemical stability, easy manufacture, also harder.Also it should be noted that, ZnO is zinc oxide, and ITO is tin indium oxide, and FTO is fluorine-doped tin dioxide.
See Fig. 4, described recombination P-type doped layer 2 comprises graphene layer 21 and P type doped layer 22, graphene layer 21 deposits P type doped layer 22 and forms composite bed, wherein, P type doped layer 22 can be P-type non-crystalline silicon, P type microcrystal silicon, P type GaAs, P type CIGS or P type CdTe, but is not limited thereto.
It should be noted that, GaAs is GaAs, and CIGS is Copper Indium Gallium Selenide, and CdTe is cadmium telluride.
See Fig. 5, described first complex eigen semiconductor layer 3 comprises graphene layer 31 and the first intrinsic semiconductor layer 32, graphene layer 31 deposits the first intrinsic semiconductor layer 32 and forms composite bed, wherein, first intrinsic semiconductor layer 32 can be intrinsic amorphous silicon or microcrystal silicon, but is not limited thereto.
See Fig. 6, described second complex eigen semiconductor layer 5 comprises graphene layer 51 and the second intrinsic semiconductor layer 52, graphene layer 51 deposits the second intrinsic semiconductor layer 52 and forms composite bed, wherein, second intrinsic semiconductor layer 52 can be intrinsic amorphous silicon or microcrystal silicon, but is not limited thereto.
See Fig. 7, described recombination N-type doped layer 6 comprises graphene layer 61 and N-type doped layer 62, and on graphene layer 61, deposited n-type doped layers 62 forms composite bed, wherein, N-type doped layer 62 can be N-type amorphous silicon, N-type microcrystal silicon, N-type GaAs, N-type CIGS or N-type CdTe, but is not limited thereto.
See Fig. 8, described back side combination electrode 7 comprises the second compound TCO transparent conductive film 71 and backplate 72, and described backplate 72 is printed on the second compound TCO transparent conductive film 71, wherein, backplate 72 can be Ag electrode or Cu electrode, but is not limited thereto.
Described second compound TCO transparent conductive film 71 comprises graphene layer 711 and the 2nd TCO transparent conductive film 712, graphene layer 711 deposits the 2nd TCO transparent conductive film 712 and form laminated film, wherein, 2nd TCO transparent conductive film 712 can be ZnO, ITO or FTO, thickness is 80-300nm, and light transmittance is 83%-97%.
Preferably, the thickness of the 2nd TCO transparent conductive film 712 is 120-250nm, and light transmittance is 85%-95%.Better, the thickness of the 2nd TCO transparent conductive film 712 is 120 nm, 140 nm, 150 nm, 180 nm, 200 nm, 220 nm, 240 nm or 250nm, and light transmittance is 85%, 86%, 88%, 90%, 92%, 93%, 94% or 95%, but is not limited thereto.
In each Rotating fields of above-mentioned combination electrode 1, recombination P-type doped layer 2, first complex eigen semiconductor layer 3, second complex eigen semiconductor layer 5, recombination N-type doped layer 6 and back side combination electrode 7, its graphene layer adopted can be single-layer graphene, and its resistivity is less than 10
-8Ω cm, light transmittance is 97%-99.5%.Preferably, the light transmittance of graphene layer is 97%, 97.5%, 98%, 98.5%, 99% or 99.5%, but is not limited thereto.
Or graphene layer can be also 2-10 layer graphene, and its resistivity is less than 10
-8Ω cm, light transmittance is 90%-97%.Preferably, the light transmittance of graphene layer is 97%, 97.5%, 98%, 98.5%, 99% or 99.5%, but is not limited thereto.
It should be noted that, Graphene (Graphene) is a kind of new material of the individual layer laminated structure be made up of carbon atom, a kind ofly form with sp2 hybridized orbit the flat film that hexangle type is honeycomb lattice by carbon atom, be a kind of two-dimensional material only having a carbon atom thickness, there is the advantages such as high transmission rate, ultra-thin and high-flexibility.
The preparation of each Rotating fields of HIT battery is isolated by the utility model, by high transmission rate, the ultra-thin and high-flexibility of Graphene, prepares P layer, intrinsic layer, N layer and the electrode needed for HIT solar cell in advance according to demand on Graphene; Because the pliability of the P layer of this compound, intrinsic layer, N layer and electrode is good, is connect and covered in N-type silicon chip, just can be prepared HIT battery through lamination.Each Rotating fields of the utility model HIT battery can be taken apart arbitrarily and recombinant, when certain Rotating fields can be replaced extremely, substantially increases the process velocity of battery and the ease of technique.
The above is preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection range of the present utility model.
Claims (10)
1. an assemblnig HIT solar cell, it is characterized in that, comprise front combination electrode, recombination P-type doped layer, the first complex eigen semiconductor layer, N-type silicon, the second complex eigen semiconductor layer, recombination N-type doped layer and back side combination electrode successively, wherein
Described front combination electrode comprises the first compound TCO transparent conductive film and front electrode, described front electrode is printed on the first compound TCO transparent conductive film, and described first compound TCO transparent conductive film comprises graphene layer and a TCO transparent conductive film;
Described recombination P-type doped layer comprises graphene layer and P type doped layer;
Described first complex eigen semiconductor layer comprises graphene layer and the first intrinsic semiconductor layer;
Described second complex eigen semiconductor layer comprises graphene layer and the second intrinsic semiconductor layer;
Described recombination N-type doped layer comprises graphene layer and N-type doped layer;
Described back side combination electrode comprises the second compound TCO transparent conductive film and backplate, described backplate is printed on the second compound TCO transparent conductive film, and described second compound TCO transparent conductive film comprises graphene layer and the 2nd TCO transparent conductive film.
2. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, described graphene layer is single-layer graphene, and its resistivity is less than 10
-8Ω cm, light transmittance is 97%-99.5%.
3. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, described graphene layer is 2-10 layer graphene, and its resistivity is less than 10
-8Ω cm, light transmittance is 90%-97%.
4. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, described P type doped layer is P-type non-crystalline silicon, P type microcrystal silicon, P type GaAs, P type CIGS or P type CdTe.
5. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, described N-type doped layer is N-type amorphous silicon, N-type microcrystal silicon, N-type GaAs, N-type CIGS or N-type CdTe.
6. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, described first intrinsic semiconductor layer is intrinsic amorphous silicon or microcrystal silicon; Described second intrinsic semiconductor layer is intrinsic amorphous silicon or microcrystal silicon.
7. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, a described TCO transparent conductive film is ZnO, ITO or FTO, and thickness is 50-300nm, and light transmittance is 85%-97%.
8. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, described 2nd TCO transparent conductive film is ZnO, ITO or FTO, and thickness is 80-300nm, and light transmittance is 83%-97%.
9. assemblnig HIT solar cell as claimed in claim 1, is characterized in that, described front electrode, backplate are Ag electrode or Cu electrode.
10. the assemblnig HIT solar cell as described in any one of claim 1-9, it is characterized in that, described front combination electrode, recombination P-type doped layer, the first complex eigen semiconductor layer, N-type silicon, the second complex eigen semiconductor layer, recombination N-type doped layer are formed with back side combination electrode and contact after lamination, and the pressure of lamination is 1.1-2.0 standard atmospheric pressure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576800A (en) * | 2014-11-21 | 2015-04-29 | 广东爱康太阳能科技有限公司 | Assembled HIT solar cell and preparation method thereof |
| CN109801986A (en) * | 2017-11-17 | 2019-05-24 | 新奥（内蒙古）石墨烯材料有限公司 | Solar battery and preparation method thereof |
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2014
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576800A (en) * | 2014-11-21 | 2015-04-29 | 广东爱康太阳能科技有限公司 | Assembled HIT solar cell and preparation method thereof |
| CN109801986A (en) * | 2017-11-17 | 2019-05-24 | 新奥（内蒙古）石墨烯材料有限公司 | Solar battery and preparation method thereof |
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Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180223 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |