CN204516782U - A kind of CZTS hull cell - Google Patents

A kind of CZTS hull cell Download PDF

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Publication number
CN204516782U
CN204516782U CN201520257511.1U CN201520257511U CN204516782U CN 204516782 U CN204516782 U CN 204516782U CN 201520257511 U CN201520257511 U CN 201520257511U CN 204516782 U CN204516782 U CN 204516782U
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China
Prior art keywords
czts
hull cell
thickness
layer
resilient coating
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CN201520257511.1U
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Inventor
余冬冬
杨春秀
叶权华
符政宽
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Hanergy Mobile Energy Holdings Group Co Ltd
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JIANGSU WUJIN HANNENG PHOTOVOLTAIC CO Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The utility model discloses a kind of CZTS hull cell, be followed successively by glass substrate, conductive layer, absorbed layer, resilient coating and electrically conducting transparent Window layer from the bottom to top; Described conductive layer is Graphene, and thickness is 0.5 ~ 5nm; Described absorbed layer is the CZTS of ald, and thickness is 500nm ~ 5um; Described resilient coating is Zn (O, S), and thickness is 10 ~ 50nm.The utility model adopts the CZTS of ald, can control element proportioning and deposition rate accurately, form the absorbed layer material that large grain size size, crystal boundary plane defect are few, fine and close after annealing, therefore, it is possible to optimize hull cell can be with coupling, raising battery efficiency.

Description

A kind of CZTS hull cell
Technical field
The utility model relates to field of thin film solar cells, particularly a kind of CZTS thin-film solar cells.
Background technology
Copper-zinc-tin-sulfur (CZTS) hull cell has following feature: 1, CZTS belongs to I2-II-IV-VI4 race quaternary compound semiconductor, each component rich reserves and pollution-free, and cost is low.2, the energy gap of CZTS is at about 1.45eV, closely the ideal bandgap 1.4eV of photovoltaic cell.3, CZTS is a kind of direct gap semiconductor material, and optical absorption coefficient, more than 104cm-1, is applicable to solar cell absorbed layer material; Battery conversion efficiency is high, can reach 32.2% in theory.2013, the CZTS hull cell conversion efficiency that Solar Frontier and IBM, the TOK of Japan research and develop jointly reached 12.6%, has broken the world record of similar solar cell.Therefore, researching and developing CZTS hull cell is trend of the times.
As everyone knows, the CZTS absorbed layer film that processability is good is the key preparing solar cell.The preparation method of current CZTS comprises vacuum method (as vapour deposition method, sputtering method, pulsed laser deposition etc.) and antivacuum method (as electrodeposition process, spray pyrolysis method, chemical deposition etc.).But said method is difficult to accurately control to the deposition rate, element proportioning etc. of CZTS film.
Utility model content
The purpose of this utility model be to provide a kind of can optimize hull cell can be with coupling, improve a kind of CZTS hull cell of battery efficiency.
The technical scheme realizing the utility model object is a kind of CZTS hull cell, is followed successively by glass substrate, conductive layer, absorbed layer, resilient coating and electrically conducting transparent Window layer from the bottom to top; Described conductive layer is Graphene, and thickness is 0.5 ~ 5nm; Described absorbed layer is the CZTS of ald, and thickness is 500nm ~ 5um; Described resilient coating is Zn (O, S), and thickness is 10 ~ 50nm.
The depositional fabric of described CZTS is: n (Cu 2s/ZnS/SnS 2) or n 1cu 2s/n 2znS/n 3snS 2or n 1(Cu 2s, ZnS)/n 2(Cu 2s, SnS 2); N, n 1, n 2and n 3be natural number.
The depositional fabric of described Zn (O, S) is: n 1znO or n 2znS.
Have employed technique scheme, the utility model has following beneficial effect: (1) the utility model adopts the CZTS of ald, can control element proportioning and deposition rate accurately, the absorbed layer material that annealing rear formation large grain size size, crystal boundary plane defect are few, fine and close, therefore, it is possible to optimize hull cell can be with coupling, raising battery efficiency.
(2) the utility model adopts glass substrate, and transparent graphene conductive layer, can not only form good ohmic contact, and can be formed into transparent two sides battery.
(3) the utility model, from the anti-drag of design electrically conducting transparent Window layer TCO and absorbed layer Zn (O, S)-CZTS can be brought to keep off band structure, reduces the charge carrier reflection loss that high potential barrier causes, and improves carrier collection efficiency.
Accompanying drawing explanation
In order to make content of the present utility model more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail, wherein
Fig. 1 is structural representation of the present utility model.
Attached number in the figure is:
Glass substrate 1, conductive layer 2, absorbed layer 3, resilient coating 4, electrically conducting transparent Window layer 5.
Embodiment
(embodiment 1)
See Fig. 1, a kind of CZTS hull cell of the present embodiment, is followed successively by glass substrate 1, conductive layer 2, absorbed layer 3, resilient coating 4 and electrically conducting transparent Window layer 5 from the bottom to top.Adopt ald ALD technology (Atomic layerdeposition, a kind of can by material with the monatomic form membrane method being plated in substrate surface in layer) on Graphene glass substrate, prepare absorbed layer CZTS and resilient coating Zn (O, S).Absorbed layer CZTS thickness is 500nm ~ 5um, can adopt the depositional model such as n (Cu2S/ZnS/SnS2), n1Cu2S/n2ZnS/n3SnS2, n1 (Cu2S, ZnS)/n2 (Cu2S, SnS2); Resilient coating Zn (O, S) thickness is 10 ~ 50nm, adopts the depositional model of n1ZnO/n2ZnS.In the TCO electrically conducting transparent Window layer 5 of the upper deposition 50 ~ 500nm of resilient coating Zn (O, S).
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment made, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.

Claims (3)

1. a CZTS hull cell, is characterized in that: be followed successively by glass substrate (1), conductive layer (2), absorbed layer (3), resilient coating (4) and electrically conducting transparent Window layer (5) from the bottom to top; Described conductive layer (2) is Graphene, and thickness is 0.5 ~ 5nm; The CZTS that described absorbed layer (3) is ald, thickness is 500nm ~ 5um; Described resilient coating (4) is Zn (O, S), and thickness is 10 ~ 50nm.
2. a kind of CZTS hull cell according to claim 1, is characterized in that: the depositional fabric of described CZTS is: n (Cu 2s/ZnS/SnS 2) or n 1cu 2s/n 2znS/n 3snS 2or n 1(Cu 2s, ZnS)/n 2(Cu 2s, SnS 2); N, n 1, n 2and n 3be natural number.
3. a kind of CZTS hull cell according to claim 2, is characterized in that: the depositional fabric of described Zn (O, S) is: n 1znO or n 2znS.
CN201520257511.1U 2015-04-24 2015-04-24 A kind of CZTS hull cell Active CN204516782U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520257511.1U CN204516782U (en) 2015-04-24 2015-04-24 A kind of CZTS hull cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520257511.1U CN204516782U (en) 2015-04-24 2015-04-24 A kind of CZTS hull cell

Publications (1)

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CN204516782U true CN204516782U (en) 2015-07-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449849A (en) * 2016-10-28 2017-02-22 浙江大学 Graphene/copper zinc tin sulfur (CZTS) thin-film solar battery and production method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449849A (en) * 2016-10-28 2017-02-22 浙江大学 Graphene/copper zinc tin sulfur (CZTS) thin-film solar battery and production method thereof

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CP01 Change in the name or title of a patent holder

Address after: Room 684, No. 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province, 213000

Patentee after: Jiangsu Wujin hina film Solar Energy Ltd

Address before: Room 684, No. 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province, 213000

Patentee before: Jiangsu Wujin Hanneng Photovoltaic Co., Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190215

Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing

Patentee after: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD.

Address before: Room 684, No. 158 Renmin East Road, Wujin District, Changzhou City, Jiangsu Province, 213000

Patentee before: Jiangsu Wujin hina film Solar Energy Ltd

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20190311

Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing

Patentee after: Han energy mobile Energy Holding Group Co., Ltd.

Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing

Patentee before: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD.

TR01 Transfer of patent right